JP2016018998A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2016018998A JP2016018998A JP2015136141A JP2015136141A JP2016018998A JP 2016018998 A JP2016018998 A JP 2016018998A JP 2015136141 A JP2015136141 A JP 2015136141A JP 2015136141 A JP2015136141 A JP 2015136141A JP 2016018998 A JP2016018998 A JP 2016018998A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000004888 barrier function Effects 0.000 claims description 106
- 238000002161 passivation Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 132
- 238000000034 method Methods 0.000 description 46
- 239000002019 doping agent Substances 0.000 description 36
- 230000005641 tunneling Effects 0.000 description 29
- 230000004048 modification Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000005684 electric field Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000000969 carrier Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
【解決手段】太陽電池は、半導体基板10と、半導体基板の一面上に位置するトンネル層20と、トンネル層上に位置し、第1導電型を有する第1導電型領域32と、トンネル層上に位置し、第2導電型を有する第2導電型領域34と、第1及び第2導電型領域にそれぞれ接続される第1及び第2電極とを含む。トンネル層は、第1及び第2導電型領域の少なくとも一部に対応するように位置し、第1厚さを有する第1部分と、第1導電型領域と第2導電型領域との間の境界部分に少なくとも一部が位置し、第1厚さよりも大きい第2厚さを有する第2部分とを含む。
【選択図】図1
Description
20 トンネル層
24 パッシベーション膜
26 反射防止膜
30 半導体層
32 第1導電型領域
34 第2導電型領域
36 バリア領域
40 絶縁層
42 第1電極
44 第2電極
100 太陽電池
110 ベース領域
130 前面電界領域
201 第1部分
202 第2部分
402 第1開口部
404 第2開口部
Claims (20)
- 半導体基板と、
前記半導体基板の一面上に位置するトンネル層と、
前記トンネル層上に位置し、第1導電型を有する第1導電型領域と、
前記トンネル層上に位置し、第2導電型を有する第2導電型領域と、
前記第1及び第2導電型領域にそれぞれ接続される第1及び第2電極と、
を含み、
前記トンネル層は、前記第1及び第2導電型領域の少なくとも一部に対応するように位置し、第1厚さを有する第1部分と、前記第1導電型領域と前記第2導電型領域との間の境界部分に少なくとも一部が位置し、前記第1厚さよりも大きい第2厚さを有する第2部分とを含む、太陽電池。 - 前記トンネル層上において前記第1導電型領域と前記第2導電型領域との間の前記境界部分の少なくとも一部に位置するバリア領域を含み、
前記第2部分が、前記バリア領域の少なくとも一部に対応して位置する、請求項1に記載の太陽電池。 - 前記第2部分上に位置する前記バリア領域の第1面と、前記第1部分上に位置する前記第1及び第2導電型領域の第1面との間に段差が存在する、請求項2に記載の太陽電池。
- 前記バリア領域の第1面よりも前記第1及び第2導電型領域の第1面が、前記半導体基板に向かって突出した位置に位置する、請求項3に記載の太陽電池。
- 前記バリア領域の第1面に対向する前記バリア領域の第2面と、前記第1及び第2導電型領域の第1面に対向する前記第1及び第2導電型領域の第2面とが同一平面上に位置するか、または段差を有する、請求項4に記載の太陽電池。
- 前記バリア領域の側面と前記第2部分の側面とが同一平面上に位置する、請求項2に記載の太陽電池。
- 前記バリア領域の側面と前記第2部分の側面とが互いにずれた位置に位置する、請求項2に記載の太陽電池。
- 前記第2部分の一部が、前記第1及び第2導電型領域のうちの少なくとも1つにわたって形成される、請求項7に記載の太陽電池。
- 前記半導体基板が、前記第2導電型を有するベース領域を含み、
前記第2部分が前記第1導電型領域側に偏って形成されて、前記第2部分が、前記半導体基板と前記バリア領域との間に位置する部分と、前記半導体基板と前記第1導電型領域との間に位置する部分とを含む、請求項8に記載の太陽電池。 - 前記バリア領域にわたって形成される前記第2部分の一部の幅が、前記バリア領域の幅の50%以上である、請求項8に記載の太陽電池。
- 前記第1導電型がp型を有し、
前記第2導電型がn型を有する、請求項9に記載の太陽電池。 - 前記第2部分は、前記半導体基板と前記バリア領域との間に位置する部分と、前記半導体基板と前記第1導電型領域との間に位置する部分と、前記半導体基板と前記第2導電型領域との間に位置する部分とを含む、請求項8に記載の太陽電池。
- 前記バリア領域の幅:前記第2部分の幅の比率が1:1.1〜1:2.5である、請求項12に記載の太陽電池。
- 前記第1導電型領域と前記第2導電型領域との間の前記境界部分は、前記第1導電型領域と前記第2導電型領域が互いに接触する接触境界部を少なくとも部分的に含む、請求項1に記載の太陽電池。
- 前記第1導電型領域と前記第2導電型領域との接触面が前記第2部分上に位置する、請求項1に記載の太陽電池。
- 前記第1導電型領域と前記第2導電型領域との間の前記境界部分は、前記第1導電型領域と前記第2導電型領域との間にバリア領域が位置する第1境界部と、前記第1導電型領域と前記第2導電型領域とが接触する第2境界部とを含む、請求項1に記載の太陽電池。
- 前記第1部分及び前記第2部分が互いに同じ物質を有するか、または互いに異なる物質を有する、請求項1に記載の太陽電池。
- 前記第1部分が、シリコン酸化物、シリコン窒化物、シリコン炭化物、アルミニウム酸化物のうちの少なくとも1つを含み、
前記第2部分が、シリコン酸化物、シリコン窒化物、シリコン炭化物、アルミニウム酸化物のうちの少なくとも1つを含む、請求項1に記載の太陽電池。 - 前記第1導電型領域及び前記第2導電型領域上に位置する絶縁層と、
前記半導体基板の他面に位置するパッシベーション膜と、
をさらに含み、
前記第2厚さは、前記第1及び第2導電型領域、前記絶縁層及び前記パッシベーション膜の厚さよりも小さい、請求項1に記載の太陽電池。 - 前記第1厚さが0.5〜5nmであり、
前記第2厚さが2nm〜100nmである、請求項1に記載の太陽電池。
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