JP2011527112A - 前面および後面に形成された導電層を有するフロントコンタクト型太陽電池 - Google Patents
前面および後面に形成された導電層を有するフロントコンタクト型太陽電池 Download PDFInfo
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- 239000002019 doping agent Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 60
- 229920005591 polysilicon Polymers 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 55
- 239000011241 protective layer Substances 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 description 15
- 238000002513 implantation Methods 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【選択図】 図1
Description
Claims (20)
- 通常動作時に太陽光線を集めるべく太陽側を向いた前面と、前記前面に対向する後面とを備える太陽電池であって、
シリコン基板と、
前記基板の後面側表面の上に形成され、前記基板との間で後面接合を形成する第1のドープトポリシリコン層と、
前記基板の前面側表面の上に形成され、前記基板に電気的な接続を行う第2のドープトポリシリコン層と、
前記第1のドープトポリシリコン層と前記基板の前記後面側表面との間の第1の誘電体層と、
前記第2のドープトポリシリコン層と前記基板の前記前面側表面との間の第2の誘電体層と、
前記太陽電池の前記後面の前記第1のドープトポリシリコン層に電気的な接続を行う第1の金属コンタクトと、
前記太陽電池の前記前面の前記第2のドープトポリシリコン層に電気的な接続を行う第2の金属コンタクトと
を備え、
前記第1の金属コンタクトおよび前記第2の金属コンタクトは、前記太陽電池から外部の電気回路へ給電することができるよう構成される太陽電池。 - 前記基板のテクスチャ加工された前面側表面の上に反射保護層をさらに備える請求項1に記載の太陽電池。
- 前記反射保護層は窒化珪素を含む請求項2に記載の太陽電池。
- 前記基板はN型シリコン基板を含み、前記第1のドープトポリシリコン層はP型ドープトポリシリコンを含み、前記第2のドープトポリシリコン層はN型ドープトポリシリコンを含む請求項1に記載の太陽電池。
- 前記第1の金属コンタクトは、前記第1の誘電体層の上に形成されたアルミニウムを含み、前記第1の誘電体層は二酸化珪素を含む請求項1に記載の太陽電池。
- 前記第1の誘電体層は、10および50オングストロームの間の厚みに形成された二酸化珪素を含む請求項1に記載の太陽電池。
- 前記第1の金属コンタクトの上に形成された第3の金属コンタクトをさらに備える請求項1に記載の太陽電池。
- 前記第1のドープトポリシリコン層の上に形成された酸化物層をさらに備え、
前記第1の金属コンタクトは、前記太陽電池の前記後面の酸化物層とともに赤外線反射層を形成する請求項1に記載の太陽電池。 - 通常動作時に太陽光線を集めるべく太陽側を向いた前面と、前記前面に対向する後面とを備える太陽電池を製造する方法であって、
前記太陽電池の前記後面のN型シリコン基板の後面側表面の上に第1の材料層を形成するステップと、
前記第1の材料層の上に、P型ドーパントを含む第1のドーパント源層を形成するステップと、
前記太陽電池の前記前面の前記N型シリコン基板の前面側表面の上に第2の材料層を形成するステップと、
前記第2の材料層の上に、N型ドーパントを含む第2のドーパント源層を形成するステップと、
前記第1のドーパント源層からP型ドーパントを前記第1の材料層へと拡散して、前記シリコン基板との間の後面接合を形成するステップと、
前記第2のドーパント源層からN型ドーパントを前記第2の材料層へと拡散するステップと
を備える方法。 - 前記第1のドーパント源層および前記第2のドーパント源層からドーパントを拡散する前に、前記第1のドーパント源層の上に第1のキャップ層を形成し、前記第2のドーパント源層の上に第2のキャップ層を形成するステップをさらに備える請求項9に記載の方法。
- 前記第1のドーパント源層は、ホウケイ酸塩ガラスを含む請求項9に記載の方法。
- 前記第2のドーパント源層は、リンガラスを含む請求項9に記載の方法。
- 前記第1の材料層および前記第2の材料層はポリシリコンを含む請求項9に記載の方法。
- 前記N型シリコン基板の前記前面側表面をテクスチャ加工するステップと、
前記N型シリコン基板の前記テクスチャ加工された前面側表面の上に反射保護層を形成するステップとをさらに備える請求項9に記載の方法。 - 前記反射保護層は窒化珪素を含む請求項14に記載の方法。
- 前記第1のドーパント源層から前記P型ドーパントを前記第1の材料層へと拡散するステップ、および、前記第2のドーパント源層から前記N型ドーパントを前記第2の材料層へと拡散するステップは、インサイチュに行われる請求項9に記載の方法。
- 通常動作時に太陽光線を集めるべく太陽側を向いた前面と、前記前面に対向する後面とを備える太陽電池であって、
N型シリコン基板と、
前記太陽電池の前記前面の前記N型シリコン基板のテクスチャ加工された表面と、
前記N型シリコン基板の前記テクスチャ加工された表面の上の反射保護層と、
前記N型シリコン基板との間で後面接合を形成するP型ポリシリコン層と、
前記太陽電池の前記前面の上のN型ポリシリコン層と、
前記太陽電池の前記前面から前記N型ポリシリコン層に電気的な接続を行う負極の金属コンタクトと、
前記太陽電池の前記後面から前記P型ポリシリコン層に電気的な接続を行う正極の金属コンタクトと
を備える太陽電池。 - 前記反射保護層は窒化珪素の層を含む請求項17に記載の太陽電池。
- 前記P型ポリシリコン層の上の第1の誘電体キャップ層と、前記N型ポリシリコン層の上の第2の誘電体キャップ層とをさらに備える請求項17に記載の太陽電池。
- 前記正極の金属コンタクトは、前記P型ポリシリコン層の上に形成された誘電体層との間で赤外線反射層を形成する金属を含む請求項17に記載の太陽電池。
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JP2015528196A (ja) * | 2012-05-29 | 2015-09-24 | ソレクセル、インコーポレイテッド | 高効率の裏面コンタクトソーラーセルの連続及び不連続ベース領域の構造及びその形成方法 |
KR20140061953A (ko) * | 2012-11-12 | 2014-05-22 | 삼성에스디아이 주식회사 | 광전소자 및 그 제조방법 |
JP2014096574A (ja) * | 2012-11-12 | 2014-05-22 | Samsung Sdi Co Ltd | 光電素子及び光電素子の製造方法 |
KR102148427B1 (ko) * | 2012-11-12 | 2020-08-26 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광전소자 및 그 제조방법 |
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US20200052140A1 (en) | 2020-02-13 |
JP5763159B2 (ja) | 2015-08-12 |
JP6111290B2 (ja) | 2017-04-05 |
US8207444B2 (en) | 2012-06-26 |
US20170033251A1 (en) | 2017-02-02 |
JP2015179874A (ja) | 2015-10-08 |
US20140034122A1 (en) | 2014-02-06 |
EP3496164A1 (en) | 2019-06-12 |
EP2311102A4 (en) | 2016-06-08 |
JP2014068034A (ja) | 2014-04-17 |
US10475945B2 (en) | 2019-11-12 |
JP5438104B2 (ja) | 2014-03-12 |
US20100000597A1 (en) | 2010-01-07 |
US9437755B2 (en) | 2016-09-06 |
CN202094163U (zh) | 2011-12-28 |
KR101481858B1 (ko) | 2015-01-13 |
ES2923117T3 (es) | 2022-09-23 |
KR20110038092A (ko) | 2011-04-13 |
US12009448B2 (en) | 2024-06-11 |
CN202487587U (zh) | 2012-10-10 |
EP2311102B1 (en) | 2019-01-16 |
WO2010002635A1 (en) | 2010-01-07 |
EP3496164B1 (en) | 2022-04-20 |
EP2311102A1 (en) | 2011-04-20 |
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