CN116864555A - 一种背面采用双层隧穿层结构的topcon电池及其制备方法 - Google Patents
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- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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Abstract
本发明涉及电池领域，具体涉及一种背面采用双层隧穿层结构的topcon电池及其制备方法，包括以下步骤：(1)制取绒面硅片；(2)硼扩散；(3)形成遂穿氧化层1和非晶硅层1；(4)形成遂穿氧化层2和非晶硅层2；(5)转化为多晶硅层1和多晶硅层2；(6)制取初型电池片；(7)去除初型电池片正面及边缘的绕镀多晶硅；(8)生长氧化铝钝化层以及沉积氮化硅减反层；(9)印刷电极。本发明提供一种新型topcon电池结构，在背面多晶硅低掺杂层与高掺杂层之间增加一层隧穿层2作为湿法阻挡层，对低掺杂多晶硅起保护作用，在清洗硅片正面以及边缘的绕镀多晶硅后，其对应隧穿层2的金属化部分得以保留，且提高钝化效果，从而提升电池的性能。
Description
技术领域
本发明涉及电池技术领域，具体涉及一种背面采用双层隧穿层结构的topcon电池及其制备方法。
背景技术
目前n-Topcon电池背面导电浆料具有一定的腐蚀性，但腐蚀能力较难控制，为了防止导电浆料烧穿多晶硅层破坏隧穿层，从而造成巨大的负荷，多晶硅层需要沉积达到一定的厚度防止其烧穿。光寄生吸收随厚度增加而增加，多晶硅层过厚会造成电池的短路电流过低，导致电池的转换效率降低。故而，将金属化部分多晶硅层厚度控制在120nm以上，高掺杂浓度提高金属化的接触能力，非金属部分厚度控制在20-50nm，适当降低掺杂浓度，提升欧姆接触。用激光去除非金属化区域的多晶硅后，在清洗硅片正面以及边缘的绕镀poly硅时，由于低掺杂多晶硅层表面无保护层，极易被破坏，会导致电池的短路电流降低，造成电池的光电转换效率降低。为此，我们提出了一种背面采用双层隧穿层结构的topcon电池及其制备方法。
发明内容
(一)针对现有技术的不足，本发明提供了一种背面采用双层隧穿层结构的topcon电池及其制备方法，克服了现有技术的不足，对低掺杂多晶硅起保护作用，从而提升电池的性能。
(二)为实现以上目的，本发明通过以下技术方案予以实现：一种背面采用双层隧穿层结构的topcon电池，包括硅基底、硅基底正面上设有P+掺杂层、氧化铝钝化层、氮化硅减反层和正面电极，且硅基底背面上设有遂穿氧化层1、多晶硅层1、遂穿氧化层2、多晶硅层2、氮化硅减反层和背面电极。
本发明还提供了一种背面采用双层隧穿层结构的topcon电池的制备方法，具体包括以下步骤：
(1)选用n型硅基底并进行双面制绒，形成金字塔结构，得到绒面硅片；
(2)在绒面硅片的正面进行硼扩散，形成P+掺杂层和硼硅玻璃层，后去除其硼硅玻璃层、背面和边缘绕扩的掺杂层；
(3)在绒面硅片的背面进行热氧化处理形成遂穿氧化层1，后采用PECVD原位磷掺杂的方法形成非晶硅层1；
(4)对磷掺杂后的硅片再次予以热氧化处理形成遂穿氧化层2，后继续采用PECVD原位磷掺杂的方法形成非晶硅层2；
(5)将两次磷掺杂后的硅片进行高温退火处理，使得非晶硅层1和非晶硅层2转化为多晶硅层1和多晶硅层2；
(6)根据金属化图案采用激光去除非金属化区域的多晶硅层2和遂穿层2，形成凸出结构，得到初型电池片；
(7)去除初型电池片正面及边缘的绕镀多晶硅；
(8)采用ALD工艺，在初型电池片正面生长氧化铝钝化层，并采用PECVD法，在初型电池片正面和背面沉积氮化硅减反层；
(9)在正面印刷银铝浆，在背面印刷银浆，烘干烧结后进行光注入处理。
优选的，步骤(2)中，硼掺杂浓度为4e20cm-3。
优选的，步骤(3)中，遂穿氧化层1的厚度为1.5-2nm，非晶硅层1的厚度为20-50nm，且非晶硅层1的磷掺杂浓度为8e19-3e20cm-3。
优选的，步骤(4)中，遂穿氧化层2的厚度为1-1.5nm，非晶硅层2的厚度为50-200nm，且非晶硅层2的磷掺杂浓度为3e20-1e21cm-3。
优选的，步骤(6)中，凸出结构的宽度为70-120μm，间距为1.2-1.5mm。
优选的，步骤(8)中，氧化铝钝化层的厚度为1-5nm，氮化硅减反层的厚度为60-80nm。
(三)本发明提供了一种背面采用双层隧穿层结构的topcon电池及其制备方法，具备以下有益效果：
本发明提供一种新型n-Topcon电池结构，在背面多晶硅低掺杂层与高掺杂层之间增加一层隧穿层2作为湿法阻挡层，对低掺杂多晶硅起保护作用，在清洗硅片正面以及边缘的绕镀多晶硅后，其对应隧穿层2的金属化部分得以保留，且提高钝化效果，从而提升电池的性能。
附图说明
图1为本发明topcon电池整体结构示意图；
图2为本发明topcon电池背面结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。
实施例1
如图1-图2所示，一种背面采用双层隧穿层结构的topcon电池，包括硅基底、硅基底正面上设有P+掺杂层、氧化铝钝化层、氮化硅减反层和正面电极，且硅基底背面上设有遂穿氧化层1、多晶硅层1、遂穿氧化层2、多晶硅层2、氮化硅减反层和背面电极。
实施例2
一种背面采用双层隧穿层结构的topcon电池的制备方法，包括以下步骤：
(1)选用n型硅基底并进行双面制绒，形成金字塔结构，得到绒面硅片。
(2)在绒面硅片的正面进行硼扩散，硼掺杂浓度为4e20cm-3，形成P+掺杂层和硼硅玻璃层，后去除其硼硅玻璃层、背面和边缘绕扩的掺杂层。
(3)在绒面硅片的背面进行热氧化处理形成厚度为1.5nm的遂穿氧化层1，后采用PECVD原位磷掺杂的方法形成厚度为20nm的非晶硅层1；非晶硅层1的磷掺杂浓度为8e19cm-3。
(4)对磷掺杂后的硅片再次予以热氧化处理形成厚度为1nm的遂穿氧化层2，后继续采用PECVD原位磷掺杂的方法形成厚度为100nm的非晶硅层2；非晶硅层2的磷掺杂浓度为6e20cm-3。
(5)将两次磷掺杂后的硅片进行高温退火处理，使得非晶硅层1和非晶硅层2转化为多晶硅层1和多晶硅层2。
(6)根据金属化图案采用激光去除非金属化区域的多晶硅层2和遂穿层2，形成凸出结构，得到初型电池片。其中，凸出结构的宽度为70μm，间距为1.2mm。
(7)去除初型电池片正面及边缘的绕镀多晶硅。
(8)采用ALD工艺，在初型电池片正面生长厚度为2nm的氧化铝钝化层，并采用PECVD法，在初型电池片正面和背面沉积厚度为60nm的氮化硅减反层。
(9)在正面印刷银铝浆，在背面印刷银浆，烘干烧结后进行光注入处理。
实施例3
一种背面采用双层隧穿层结构的topcon电池的制备方法，包括以下步骤：
(1)选用n型硅基底并进行双面制绒，形成金字塔结构，得到绒面硅片。
(2)在绒面硅片的正面进行硼扩散，硼掺杂浓度为4e20cm-3，形成P+掺杂层和硼硅玻璃层，后去除其硼硅玻璃层、背面和边缘绕扩的掺杂层。
(3)在绒面硅片的背面进行热氧化处理形成厚度为2nm的遂穿氧化层1，后采用PECVD原位磷掺杂的方法形成厚度为45nm的非晶硅层1；非晶硅层1的磷掺杂浓度为2e20cm-3。
(4)对磷掺杂后的硅片再次予以热氧化处理形成厚度为1.5nm的遂穿氧化层2，后继续采用PECVD原位磷掺杂的方法形成厚度为150nm的非晶硅层2；非晶硅层2的磷掺杂浓度为1e21cm-3。
(5)将两次磷掺杂后的硅片进行高温退火处理，使得非晶硅层1和非晶硅层2转化为多晶硅层1和多晶硅层2。
(6)根据金属化图案采用激光去除非金属化区域的多晶硅层2和遂穿层2，形成凸出结构，得到初型电池片。其中，凸出结构的宽度为100μm，间距为1.5mm。
(7)去除初型电池片正面及边缘的绕镀多晶硅。
(8)采用ALD工艺，在初型电池片正面生长厚度为4nm的氧化铝钝化层，并采用PECVD法，在初型电池片正面和背面沉积厚度为75nm的氮化硅减反层。
(9)在正面印刷银铝浆，在背面印刷银浆，烘干烧结后进行光注入处理。
质量检测
1、对实施例2-3中的电池以及常规topcon电池(对照组)的性能进行检测。具体检测结果如下表所示。
表1性能检测
| 类别 | Voc(mV) | Isc(mA) | F(％) | Eta(％) | 在线EL良率(％) |
| 实施例2 | 715.73 | 13.856 | 83.72 | 24.236 | 94.04 |
| 实施例3 | 715.94 | 13.977 | 83.64 | 24.275 | 94.12 |
| 对照组 | 713.85 | 13.674 | 83.78 | 23.792 | 94.31 |
本发明的实施例公布的是较佳的实施例，但并不局限于此，本领域的普通技术人员，极易根据上述实施例，领会本发明的精神，并做出不同的引申和变化，但只要不脱离本发明的精神，都在本发明的保护范围内。
Claims (7)
1.一种背面采用双层隧穿层结构的topcon电池，其特征在于，包括硅基底、硅基底正面上设有P+掺杂层、氧化铝钝化层、氮化硅减反层和正面电极，且硅基底背面上设有遂穿氧化层1、多晶硅层1、遂穿氧化层2、多晶硅层2、氮化硅减反层和背面电极。
2.如权利要求1所述的一种背面采用双层隧穿层结构的topcon电池的制备方法，其特征在于，包括以下步骤，
(1)选用n型硅基底并进行双面制绒，形成金字塔结构，得到绒面硅片；
(2)在绒面硅片的正面进行硼扩散，形成P+掺杂层和硼硅玻璃层，后去除其硼硅玻璃层、背面和边缘绕扩的掺杂层；
(3)在绒面硅片的背面进行热氧化处理形成遂穿氧化层1，后采用PECVD原位磷掺杂的方法形成非晶硅层1；
(4)对磷掺杂后的硅片再次予以热氧化处理形成遂穿氧化层2，后继续采用PECVD原位磷掺杂的方法形成非晶硅层2；
(5)将两次磷掺杂后的硅片进行高温退火处理，使得非晶硅层1和非晶硅层2转化为多晶硅层1和多晶硅层2；
(6)根据金属化图案采用激光去除非金属化区域的多晶硅层2和遂穿层2，形成凸出结构，得到初型电池片；
(7)去除初型电池片正面及边缘的绕镀多晶硅；
(8)采用ALD工艺，在初型电池片正面生长氧化铝钝化层，并采用PECVD法，在初型电池片正面和背面沉积氮化硅减反层；
(9)在正面印刷银铝浆，在背面印刷银浆，烘干烧结后进行光注入处理。
3.如权利要求2所述的一种背面采用双层隧穿层结构的topcon电池的制备方法，其特征在于，步骤(2)中，硼掺杂浓度为4e20cm-3。
4.如权利要求2所述的一种背面采用双层隧穿层结构的topcon电池的制备方法，其特征在于，步骤(3)中，遂穿氧化层1的厚度为1.5-2nm，非晶硅层1的厚度为20-50nm，且非晶硅层1的磷掺杂浓度为8e19-3e20cm-3。
5.如权利要求2所述的一种背面采用双层隧穿层结构的topcon电池的制备方法，其特征在于，步骤(4)中，遂穿氧化层2的厚度为1-1.5nm，非晶硅层2的厚度为50-200nm，且非晶硅层2的磷掺杂浓度为3e20-1e21cm-3。
6.如权利要求2所述的一种背面采用双层隧穿层结构的topcon电池的制备方法，其特征在于，步骤(6)中，凸出结构的宽度为70-120μm，间距为1.2-1.5mm。
7.如权利要求2所述的一种背面采用双层隧穿层结构的topcon电池的制备方法，其特征在于，步骤(8)中，氧化铝钝化层的厚度为1-5nm，氮化硅减反层的厚度为60-80nm。
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| CN117276414A (zh) * | 2023-11-23 | 2023-12-22 | 苏州腾晖光伏技术有限公司 | P型高效钝化接触电池的制备方法及制造系统 |
| CN117457805A (zh) * | 2023-12-25 | 2024-01-26 | 正泰新能科技股份有限公司 | 一种TOPCOn电池及其制备方法、光伏组件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117276414A (zh) * | 2023-11-23 | 2023-12-22 | 苏州腾晖光伏技术有限公司 | P型高效钝化接触电池的制备方法及制造系统 |
| CN117276414B (zh) * | 2023-11-23 | 2024-01-26 | 苏州腾晖光伏技术有限公司 | P型高效钝化接触电池的制备方法及制造系统 |
| CN117457805A (zh) * | 2023-12-25 | 2024-01-26 | 正泰新能科技股份有限公司 | 一种TOPCOn电池及其制备方法、光伏组件 |
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