CN115411146A - 一种TOPCon电池制备方法及电池 - Google Patents
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Abstract
本发明涉及一种TOPCon电池制备方法及电池,方法包括:S1:对N型硅片进行清洗和制绒;S2:对正面进行硼扩散掺杂;S3:对背面进行抛光;S4:对背面生长隧穿氧化层和非晶硅层;S5:对背面进行磷扩散掺杂;S6:清洗去除正面绕镀的多晶硅,并保留预设厚度的BSG层;S7:对正面进行激光掺杂;S8:对正面和背面的膜层均进行RCA清洗;S9:对N型硅片的正面和背面均分别生长保护层、钝化层;S10:对N型硅片的正面和背面均印刷金属电极。本发明提供的电池制备方法,可有效减少载流子在扩散层的横向流动,减小载流子复合速率,提高电池的开压和电流,减少前金属电极的接触电阻,改善填充因子,从而提高转换效率。
Description
技术领域
本发明属于TOPCon电池制备领域,具体涉及一种TOPCon电池制备方法及电池。
背景技术
隧穿氧化层钝化接触太阳能电池(Tunnel Oxide Passivated Contact solarcell,TOPcon)是2013年在第28届欧洲PVSEC光伏大会上德国Fraunhofer太阳能研究所首次提出的一种新型钝化接触太阳能电池,首先在电池背面制备一层隧穿氧化层,然后再沉积一层掺杂多晶硅,二者共同形成了钝化接触结构,为硅片的背面提供了良好的界面钝化,有效降低表面复合和金属接触复合。
相较于其他传统的太阳能电池,TOPCon太阳能电池可以明显提高太阳能电池的光电转换效率,目前国内TOPCon太阳能电池市场已经占有一定的市场份额。但因TopCon电池正面金属诱导复合是太阳能组件中总复合损失的重要组成部分,所以正面通过叠加激光SE可有效在金属栅线(电极)与硅片接触部分及其附近进行高浓度掺杂,而在电极以外的区域进行低浓度掺杂。这样的结构可降低扩散层复合,由此可提高光线的短波响应,同时减少前金属电极与硅的接触电阻,使得开路电压、短路电流、填充因子都得到较好的改善,从而提高转换效率。
目前激光SE的制作技术主要有直接激光掺杂和激光开槽,直接激光掺杂制作技术是在硼扩散后再利用激光能量直接将硼扩后BSG中的掺杂源进行二次推进,工艺步骤简单,但是由于硼扩后BSG层太厚,直接激光掺杂,所需激光功率较大,对硅片损伤也较大,B源也很难推进去。激光开槽制作技术中需增加掩膜或者二次硼扩,工艺步骤增多。
发明内容
本发明的目的是提供一种N型正面SE结构TOPCon电池制备方法及电池,对硅片损伤小,所需激光功率小,工艺步骤少。
为达到上述目的,本发明采用的一个技术方案是:
一种TOPCon电池制备方法,其包括:
S1:对N型硅片进行清洗和制绒;
S2:对所述N型硅片的正面进行硼扩散掺杂;
S3:对所述N型硅片的背面进行抛光;
S4:对所述N型硅片的背面生长隧穿氧化层和非晶硅层;
S5:对所述N型硅片的背面进行磷扩散掺杂;
S6:清洗去除所述N型硅片的正面绕镀的多晶硅,并保留预设厚度的BSG层;
S7:对所述N型硅片的正面进行激光掺杂形成正面SE结构;
S8:对所述N型硅片的正面和背面的膜层均进行RCA清洗;
S9:对所述N型硅片的正面和背面均分别生长保护层、钝化层;
S10:对所述N型硅片的正面和背面均印刷金属电极。
优选地,步骤S7中,激光掺杂后的所述N型硅片的表面浓度为5×1018/cm3-5×1019/cm3,结深控制为0.8~2.5um。
优选地,步骤S7中,激光功率为60%~95%,扫描速度为3~10m/s,激光宽度为70~150um。
优选地,步骤S9中,所述保护层的材质为二氧化硅;所述保护层的厚度为5~20nm。
优选地,步骤S2中,硼扩散掺杂后的BSG厚度为50~250nm;步骤S6中,保留的BSG厚度范围为5-80nm。
优选地,步骤S2中,硼扩散掺杂后的所述N型硅片的表面浓度为1×1018/cm3-1×1019/cm3,结深为0.2~0.7um。
优选地,步骤S2中,沉积温度为800~900℃,硼源流量为50~500sccm,氧气流量为100~1500sccm。
优选地,步骤S4中,所述隧穿氧化层的厚度为1~4nm;所述非晶硅层的厚度为30~260nm。
优选地,步骤S5中,磷扩散掺杂的沉积温度为600~950℃。
本发明采用的另一个技术方案是:
一种根据所述的TOPCon电池制备方法制备得到的TOPCon电池。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:
本发明提供的N型正面SE结构TOPCon电池制备方法,与常规TOPCon相比,除激光外无需增加其他设备,通过步骤S6在清洗去除正面绕镀的多晶硅过程中保留适当厚度的BSG层留作SE硼源,激光掺杂后再用常规的RCA清洗激光区域熔融层以及剩余的BSG层,此制备方法工艺步骤简单,使得该电池正面结构的非印刷区为轻掺杂,可以有效减少载流子在扩散层的横向流动,减小载流子复合速率,提高电池的开压和电流,同时印刷区为重掺杂,减少前金属电极的接触电阻,改善填充因子,从而提高转换效率。
附图说明
附图1为本发明的TOPCon电池制备方法的工作流程图;
附图2为由本发明的TOPCon电池制备方法制备得到的TOPCon电池的结构示意图;
图3为常规N型TOPCon电池的制备流程图。
以上附图中:
1-N型硅片,2-发射极轻掺区P+,3-隧穿氧化层,4-非晶硅层,5-正面二氧化硅层,6-正面钝化膜层,7-背面钝化膜层,8-背面金属电极,9-正面金属电极,10-发射极重掺区P++,11-背面二氧化硅层。
具体实施方式
下面结合附图所示的实施例对本发明作进一步描述。
参见图1,一种TOPCon电池制备方法,其包括:
S1:对N型硅片的正面和背面进行清洗和制绒,采用常规的制绒工艺将原始的N型硅片浸入在KOH或NaOH溶液进行双面制绒;
S2:对N型硅片的正面进行硼扩散掺杂,硼扩散源采用BCl3,硼扩散掺杂后在N型硅片的正面沉积发射极轻掺区P+。
其中,硼扩散掺杂的profile为低表面浓度浅结,表面浓度优选控制为1×1018/cm3-1×1019/cm3,结深优选控制为0.2~0.7um。
进一步地,硼扩散掺杂为一步沉积或多步沉积,沉积温度控制为800~900℃,硼源流量控制为50~500sccm,氧气流量控制为100~1500sccm;
进一步地,硼扩散掺杂的无氧推进及氧化推进温度均控制为900~1100℃,氧气流量控制为5~30slm,时间控制为2~3h;
进一步地,硼扩散掺杂的降温过程中增加大氧直到破真空步,大氧流量控制为5~30slm。
该步骤中,硼扩散掺杂后的BSG层的厚度控制为50~250nm。
S3:对N型硅片的背面进行抛光;
S4:对N型硅片的背面生长隧穿氧化层3(二氧化硅)和非晶硅层4(Poly-Si/N+),其中,隧穿氧化层的厚度为1~4nm;非晶硅层的厚度为30~260nm;
S5:对N型硅片的背面进行磷扩散掺杂,其中,磷扩散掺杂的沉积温度控制为600~950℃;
S6:清洗去除N型硅片的正面绕镀的多晶硅,保留预设厚度的BSG层留作SE硼源,其中,保留的BSG厚度控制为5~80nm;
S7:对N型硅片的正面进行激光掺杂形成正面SE结构,在印刷区形成发射极重掺区P++10。
其中,激光采用短波高能量激光后形成SE结构,激光功率控制为60%~95%,扫描速度控制为3~10m/s,激光宽度控制为70~150um。
进一步地,激光掺杂后表面浓度控制为5×1018/cm3-5×1019/cm3,结深控制为0.8~2.5um。
步骤S6中,保留的BSG层厚度较小,在步骤S7中以保留的BSG层作为硼源直接激光掺杂,所需激光功率较小,对硅片损伤也较小,B源也较容易推进去。
S8:对N型硅片的正面和背面的膜层均进行RCA清洗,可采用HF(DHF)、HPM、APM进行清洗,清洗激光区域熔融层以及剩余的BSG层;
S9:对N型硅片的正面和背面均生长保护层,在正面和背面的保护层上均生长钝化层;其中,保护层的材质为二氧化硅,生成一层保护层以消除或大大减弱后续沉积钝化层时对硅片表面造成的射频损伤,减少表面复合,增强钝化效果。
本例中,保护层的厚度控制为5~20nm。
S10:对N型硅片的正面和背面均印刷金属电极,背面形成背面电极,正面形成正面电极。
本例中,该方法与常规TOPCon相比,除激光外无需增加其他设备,通过步骤S6在清洗去除正面绕镀的多晶硅过程中保留适当厚度的BSG层留作SE硼源,激光掺杂后再用常规的RCA清洗激光区域熔融层以及剩余的BSG层,此制备方法工艺步骤简单,使得该电池正面结构的非印刷区为轻掺杂,可以有效减少载流子在扩散层的横向流动,减小载流子复合速率,提高电池的开压和电流,同时印刷区为重掺杂,减少前金属电极的接触电阻,改善填充因子,从而提高转换效率。
在本发明的另一个实施例中,提供一种由TOPCon电池制备方法制备得到的N型正面SE结构TOPCon电池,参见图2,N型硅片1的背面依次沉积有隧穿氧化层3、非晶硅层4(Poly-Si/N+)、背面二氧化硅层11、背面钝化膜层7、背面金属电极8,N型硅片1的正面依次沉积有发射极轻掺区P+2发射极重掺区P++10(位于印刷区)、正面二氧化硅层5、正面钝化膜层6、正面金属电极9,发射极轻掺区P+2位于非印刷区,发射极重掺区P++10(位于印刷区)。
为了进一步说明本发明,下面通过以下实施例进行详细说明。
实施例1
一种N型正面SE结构TOPCon电池制备方法,包括如下步骤:
S1:对N型硅片清洗和制绒;
S2:对N型硅片的正面进行硼扩散掺杂;
硼扩散掺杂的profile为低表面浓度浅结,表面浓度为8×1018/cm-3,结深为0.4um;
硼扩散掺杂为一步沉积,沉积温度为860℃,硼源流量为150sccm,氧气流量为700sccm;无氧推进温度为910℃,氧化推进温度为950℃,氧气流量控制为15slm,时间控制为2h;降温过程中增加大氧(20slm)直到破真空步,BSG厚度为180nm;
S3:对N型硅片的背面进行抛光;
S4:对N型硅片的背面生长隧穿氧化层和非晶硅层;
S5:对N型硅片的背面进行磷扩散掺杂;
S6:清洗去除N型硅片的正面绕镀的多晶硅,保留30nm的BSG层留作SE硼源;
S7:对N型硅片的正面进行激光掺杂,形成正面SE结构;
其中,激光掺杂的激光功率为75%,扫描速度为5m/s,激光宽度为120um;激光掺杂后表面浓度为1×1019/cm-3,结深为0.9um;
S8:对N型硅片的正面和背面的膜层均进行RCA清洗;
S9:对N型硅片的正面和背面均进行氧化,生长一层二氧化硅保护层;
S10:在N型硅片的正面和背面均沉积钝化膜;
S11:在N型硅片的正面和背面均印刷金属电极。
实施例2
一种N型正面SE结构TOPCon电池制备方法,包括如下步骤:
S1:对N型硅片清洗和制绒;
S2:对N型硅片的正面进行硼扩散掺杂;
硼扩散掺杂的profile为低表面浓度浅结,表面浓度为7×1018/cm-3,结深为0.5um;
硼扩散掺杂为两步沉积,第一步沉积温度为840℃,第二步沉积温度为850℃,硼源流量为100sccm,氧气流量为500sccm;无氧推进温度为920℃,氧化推进温度为960℃,氧气流量控制为20slm,时间控制为2.5h;降温过程中增加大氧(30slm)直到破真空步,BSG厚度为200nm;
S3:对N型硅片的背面进行抛光;
S4:对N型硅片的背面生长隧穿氧化层和非晶硅层;
S5:对N型硅片的背面进行磷扩散掺杂;
S6:清洗去除对N型硅片的正面绕镀的多晶硅,保留50nm的BSG层留作SE硼源;
S7:对N型硅片的正面进行激光掺杂,形成正面SE结构;
激光掺杂的激光功率为80%,扫描速度为8m/s,激光宽度为100um;激光掺杂后表面浓度为9×1018/cm-3,结深为1.0um;
S8:N型硅片的正面和背面的膜层均进行RCA清洗;
S9:对N型硅片的正面和背面均进行氧化,生长一层二氧化硅保护层;
S10:在N型硅片的正面和背面均沉积钝化膜;
S11:在N型硅片的正面和背面均印刷金属电极。
对比例
参见图3,常规N型TOPCon电池的制备包括如下步骤:
S1:对N型硅片清洗和制绒;
S2:对N型硅片的正面进行硼扩散掺杂;
S3:对N型硅片的背面进行抛光;
S4:在N型硅片的背面生长隧穿氧化层和非晶硅层;
S5:对N型硅片的背面进行磷扩散掺杂;
S6:对N型硅片进行边缘和表面刻蚀处理,并进行RCA清洗;
S7:对N型硅片的正面和背面均进行氧化,生长一层二氧化硅保护层;
S8:在N型硅片的正面和背面均沉积钝化膜;
S9:在N型硅片的正面和背面均印刷金属电极。
性能测试:测试实施例1、2和对比例得到的TOPCon电池的各项性能,结果参见下表:
Uoc(mV) | Isc(A) | FF(%) | Eta(%) | |
实施例1 | 715 | 13.46 | 83.89 | 24.45 |
实施例2 | 716 | 13.48 | 83.81 | 24.50 |
对比例 | 712 | 13.36 | 83.75 | 24.13 |
由表中数据可以看出,与对比例相比,本发明实施例1~2的N型正面SE结构TOPCon电池的Uoc、Isc、FF和Eta均提升。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。
Claims (10)
1.一种TOPCon电池制备方法,其特征在于,包括:
S1:对N型硅片进行清洗和制绒;
S2:对所述N型硅片的正面进行硼扩散掺杂;
S3:对所述N型硅片的背面进行抛光;
S4:对所述N型硅片的背面生长隧穿氧化层和非晶硅层;
S5:对所述N型硅片的背面进行磷扩散掺杂;
S6:清洗去除所述N型硅片的正面绕镀的多晶硅,并保留预设厚度的BSG层;
S7:对所述N型硅片的正面进行激光掺杂;
S8:对所述N型硅片的正面和背面的膜层均进行RCA清洗;
S9:对所述N型硅片的正面和背面均分别生长保护层、钝化层;
S10:对所述N型硅片的正面和背面均印刷金属电极。
2.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S7中,激光掺杂后的所述N型硅片的表面浓度为5×1018/cm3-5×1019/cm3,结深控制为0.8~2.5um。
3.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S7中,激光功率为60%~95%,扫描速度为3~10m/s,激光宽度为70~150um。
4.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S9中,所述保护层的材质为二氧化硅;所述保护层的厚度为5~20nm。
5.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S2中,硼扩散掺杂后的BSG厚度为50~250nm;步骤S6中,保留的BSG厚度范围为5-80nm。
6.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S2中,硼扩散掺杂后的所述N型硅片的表面浓度为1×1018/cm3-1×1019/cm3,结深为0.2~0.7um。
7.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S2中,沉积温度为800~900℃,硼源流量为50~500sccm,氧气流量为100~1500sccm。
8.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S4中,所述隧穿氧化层的厚度为1~4nm;所述非晶硅层的厚度为30~260nm。
9.根据权利要求1所述的TOPCon电池制备方法,其特征在于,步骤S5中,磷扩散掺杂的沉积温度为600~950℃。
10.一种根据权利要求1至9中任意一项所述的TOPCon电池制备方法制备得到的TOPCon电池。
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CN116885049A (zh) * | 2023-09-07 | 2023-10-13 | 武汉帝尔激光科技股份有限公司 | 一种激光掺杂方法及TOPCon太阳能电池 |
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CN116885049A (zh) * | 2023-09-07 | 2023-10-13 | 武汉帝尔激光科技股份有限公司 | 一种激光掺杂方法及TOPCon太阳能电池 |
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