CN112510121A - 一种perc电池碱抛前后保护工艺 - Google Patents
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Abstract
本发明公开了一种perc电池碱抛前后保护工艺,涉及晶硅太阳能电池生产制造技术领域,包括如下步骤:制绒、扩散、SE、PECVD沉积氧化硅、单面去PSG和碱抛光、制作电池片背面钝化膜层、制作电池片正面钝化膜层、使用激光开槽设备,在背表面形成局部接触结构、制作电极、退火和测试分选电池片的电性能;本发明在激光SE后,通过pecvd设备用硅烷和笑气在正面沉积50nm以上氧化硅,代替管式氧化炉用氧气生成氧化硅,实现了对正面绒面的完全保护,最终提高了电池片的转换效率。
Description
技术领域
本发明涉及晶硅太阳能电池生产制造技术领域,更具体的是涉及perc电池碱抛前后保护工艺技术领域。
背景技术
随着光伏技术的不断发展,晶硅太阳能电池作为以一种将太阳能转化为电能的清洁能源产得到了迅猛发展,光伏产业的竞争也越来越激烈,降低成本和提高效率变得越来越重要。局部背接触太阳电池PERC技术以其良好的钝化结构,可大大提高电池的开路电压和短路电流,从而提高电池效率。现在PERC已经全面取代传统的电池结构,成为主流生产技术。Perc的钝化机制主要是在背面沉积氧化铝对硅基体形成场钝化,减少背表面少子数量,降低背面符合速率。平整的背面对场钝化有着极大的好处,碱抛形成光滑表面的能力远远大于酸抛,使碱抛技术逐渐成为主流。
碱抛的原理是使用对氧化硅有浸润作用同时对硅有疏离作用的添加剂来保护正面不受KOH的刻蚀。碱抛前会先把背面经过单面PSG刻蚀机,用HF把背面的氧化硅刻掉,但是保留正面氧化硅,然后在碱抛工艺过程中,添加剂会附着到正面氧化硅的表面隔离KOH和氧化硅。从而保护正面最里面的硅不和KOH接触而反应。同时由于背面氧化层已经在前面去PSG被刻掉了,此时KOH就会和背面的硅直接反应,使背面被抛光形成光滑的表面。
硅片经过制绒然后扩散,扩散后的片子表面已经有一层氧化硅了,然后再进行激光SE,在SE时激光产生的高温会蒸发掉SE区部分氧化硅和硅,露出了基体的硅,所以后面还需要做一步氧化,目前是用管式氧化炉用氧气在700℃左右对正面进行氧化,使SE区露出的硅也被氧化掉。然后再进行碱抛。
现有技术在实际碱抛过程中由于管式氧化炉是用氧气和硅片反应生成氧化硅,从而导致氧化层太薄和不均匀,使碱抛添加剂不能很好的附着在全部正表面,导致一部分KOH和正面的硅产生了反应,影响了正面绒面,导致效率的降低。
发明内容
本发明的目的在于:为了解决现有技术在实际碱抛过程中由于管式氧化炉是用氧气和硅片反应生成氧化硅,从而导致氧化层太薄和不均匀,使碱抛添加剂不能很好的附着在全部正表面,导致一部分KOH和正面的硅产生了反应,影响了正面绒面,导致效率的降低的技术问题,本发明提供一种perc电池碱抛前后保护工艺。
本发明为了实现上述目的具体采用以下技术方案:
一种perc电池碱抛前后保护工艺,包括如下步骤:
步骤1、制绒:采用槽式制绒设备,对单晶硅片进行制绒处理,形成金字塔绒面,得到硅基片;
步骤2、扩散:采用管式高温扩散技术,对步骤1中得到的硅基体掺硼制备PN结;
步骤3、SE:激光SE掺杂技术,对电池正面需金属化下方进行重掺杂;
步骤4、PECVD沉积氧化硅:使用PECVD设备用硅烷和笑气反应600秒,在正面沉积50nm以上氧化硅。搭配碱抛光技术,对激光区域和非激光区域沉积氧化层,提升激光区域和非激光区域抗碱腐蚀能力;
步骤5、单面去PSG和碱抛光:抛光去除硅片边缘PN结及表面缺陷,使背表面平整;
步骤6、制作电池片背面钝化膜层;
步骤7、制作电池片正面钝化膜层;
步骤8、使用激光开槽设备,在背表面形成局部接触结构;
步骤9、制作电极:使用丝网印刷技术,制备电池片的正电极,背电极及背场;
步骤10、使用高温烧结技术,使金属与硅之间形成良好的欧姆接触,电注入退火;
步骤11、测试分选电池片的电性能。
其中,步骤7中,使用PECVD技术,在硅片正表面沉积70-90nm氮化硅薄膜。
其中,步骤6中,使用ALD技术,先在硅片背表面沉积5nm-10nm氧化铝薄膜,然后再在三氧化二铝薄膜表面沉积80nm—110nm氮化硅薄膜。
本发明的有益效果如下:
本发明设计了一种perc电池碱抛前后保护工艺,在激光SE后,通过pecvd设备用硅烷和笑气在正面沉积50nm以上氧化硅,代替管式氧化炉用氧气生成氧化硅,实现了对正面绒面的完全保护,最终提高了电池片的转换效率。
附图说明
图1是本发明的碱抛前后工艺流程图;
图2是现有perc碱抛前后工艺流程图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。
实施例1
实验选用晶向为<100>,尺寸为158.75mm×158.75mm硅片厚度为180±20um,电阻率为0.5-1.5Ω.cm的P型直拉单晶硅片,按如下加工方法制备800片PERC电池,本发明发明的工艺流程,如图一所示
一种perc电池碱抛前后保护工艺,包括如下步骤:
步骤1、制绒:采用槽式制绒设备,对单晶硅片进行制绒处理,形成金字塔绒面;
步骤2、扩散:采用管式高温扩散技术,对硅基体掺硼制备PN结;
步骤3、SE:激光SE掺杂技术,对电池正面需金属化下方进行重掺杂;
步骤4、PECVD沉积氧化硅:使用PECVD设备用硅烷和笑气反应600秒,在正面沉积50nm以上氧化硅。搭配碱抛光技术,对激光区域和非激光区域沉积氧化层,提升激光区域和非激光区域抗碱腐蚀能力;
步骤5、单面去PSG和碱抛光:抛光去除硅片边缘PN结及表面缺陷,使背表面平整;
步骤6、制作电池片背面钝化膜层:使用ALD技术,先在硅片背表面沉积5nm-10nm氧化铝薄膜,然后再在三氧化二铝薄膜表面沉积80nm—110nm氮化硅薄膜;
步骤7、制作电池片正面钝化膜层:使用PECVD技术,在硅片正表面沉积70-90nm氮化硅薄膜;
步骤8、使用激光开槽设备,在背表面形成局部接触结构;
步骤9、制作电极:使用丝网印刷技术,制备电池片的正电极,背电极及背场;
步骤10、使用高温烧结技术,使金属与硅之间形成良好的欧姆接触,电注入退火;
步骤11、测试分选电池片的电性能。
对比例:
实验选用晶向为<100>,尺寸为158.75mm×158.75mm硅片厚度为180±20um,电阻率为0.5-1.5Ω.cm的P型直拉单晶硅片,按如下加工方法制备800片PERC电池,如图2所示:
现有的一种perc碱抛前后工艺,包括如下步骤:
步骤1、采用槽式制绒设备,对单晶硅片进行制绒处理,形成金字塔绒面;
步骤2、采用管式高温扩散技术,对硅基体掺硼制备PN结;
步骤3、激光SE掺杂技术,对电池正面需金属化下方进行重掺杂;
步骤4、管式氧化炉氧化,搭配碱抛光技术,对激光区域热氧化处理,提升激光区域抗碱腐蚀能力;
步骤5、单面去psg和碱抛光,抛光去除硅片边缘PN结及表面缺陷,使背表面平整;
步骤6、使用ALD技术,先在硅片背表面沉积5nm-10nm氧化铝薄膜,然后再在三氧化二铝薄膜表面沉积80nm-110nm氮化硅薄膜,制作电池片背面钝化膜层;
步骤7、使用PECVD技术,在硅片正表面沉积70-90nm氮化硅薄膜,制作电池片正面钝化膜层;
步骤8、使用激光开槽设备,在背表面形成局部接触结构;
步骤9、使用丝网印刷技术,制备电池片的正电极,背电极及背场;
步骤10、使用高温烧结技术,使金属与硅之间形成良好的欧姆接触,电注入退火;
步骤11、测试分选电池片的电性能。
实施例1和对比例采用的硅片参数完全一致。且实施例和对比例采用电池片的加工方法除了第四步的氧化层生成工艺存在差异外,其余加工步骤均完全相同。实施例和对比例的电性能对比如表1,本发明对电池电性能表现为,开路电压和短路电流及FF的提升,对电池效率实现提升。
表1实施例1和对比例的性能对比表
组别 | Eta | Uoc | Isc | FF | Rsh | Rs | IRev2 |
对比例 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
实施例 | 1.031 | 1.0005 | 1.0064 | 1.008 | 24 | 1.0000 | 1.0098 |
Claims (3)
1.一种perc电池碱抛前后保护工艺,其特征在于,包括如下步骤:
步骤1、制绒:采用槽式制绒设备,对单晶硅片进行制绒处理,形成金字塔绒面,得到硅基片;
步骤2、扩散:采用管式高温扩散技术,对步骤1中得到的硅基体掺硼制备PN结;
步骤3、SE:激光SE掺杂技术,对电池正面需金属化下方进行重掺杂;
步骤4、PECVD沉积氧化硅:使用PECVD设备用硅烷和笑气反应600秒,在正面沉积50nm以上氧化硅。搭配碱抛光技术,对激光区域和非激光区域沉积氧化层,提升激光区域和非激光区域抗碱腐蚀能力;
步骤5、单面去PSG和碱抛光:抛光去除硅片边缘PN结及表面缺陷,使背表面平整;
步骤6、制作电池片背面钝化膜层;
步骤7、制作电池片正面钝化膜层;
步骤8、使用激光开槽设备,在背表面形成局部接触结构;
步骤9、制作电极:使用丝网印刷技术,制备电池片的正电极,背电极及背场;
步骤10、使用高温烧结技术,使金属与硅之间形成良好的欧姆接触,电注入退火;
步骤11、测试分选电池片的电性能。
2.根据权利要求1所述的一种perc电池碱抛前后保护工艺,其特征在于,步骤7中,使用PECVD技术,在硅片正表面沉积70-90nm氮化硅薄膜。
3.根据权利要求1所述的一种perc电池碱抛前后保护工艺,其特征在于,步骤6中,使用ALD技术,先在硅片背表面沉积5nm-10nm氧化铝薄膜,然后再在三氧化二铝薄膜表面沉积80nm—110nm氮化硅薄膜。
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