CN111129221A - 一种perc太阳能电池碱抛光制备方法 - Google Patents
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Abstract
本发明公开一种PERC太阳能电池碱抛光制备方法，步骤包括制绒、扩散、正面激光、刻蚀、退火、背面钝化膜、正面钝化膜、背面激光、丝网印刷、烧结，其特征在于：在所述制绒步骤之前还包括碱抛光步骤、背面沉积二氧化硅膜步骤，所述碱抛光步骤采用氢氧化钾溶液对硅片进行抛光，所述背面沉积二氧化硅膜步骤采用PECVD技术在硅片背面镀上一层二氧化硅掩膜，所述制绒步骤中添加氢氧化钾添加剂进行制绒。本方法使制得的电池片背面平整度提高，有利于提高背膜钝化效果，提高开压，进而提升了电池的转换效率。
Description
技术领域
本发明涉及太阳能电池技术领域，尤其是一种PERC太阳能电池碱抛光制备方法。
背景技术
目前，PERC晶体硅太阳能电池作为市场上的主流产品，生产工艺日趋成熟和完善，电池效率也接近瓶颈。如图2所示，现有的PERC太阳能电池技术的制备流程依次如下：
1.制绒：选用湿法技术，在P型单晶硅片表面形成绒面；
2.扩散：通过扩散形成P-N结；
3.正面激光：制备选择发射极，用激光对硅片表面进行重掺杂；
4.刻蚀：使用HF/HNO3溶液进行背面抛光，使用HF去除正面及背面扩散过程中形成的磷硅玻璃(PSG)；
5.退火：重新激活硅片表面死层中的磷原子，修复悬挂键，形成二氧化硅层；
6.背面钝化膜：制备氧化铝及氮化硅膜；
7.正面钝化膜：制备氮化硅钝化膜，降低反射率，降低硅片的表面复合速度；
8.背面激光：形成背接触；
9.丝网印刷：印刷背银、背面铝浆及正银浆料；
10.烧结：形成欧姆接触；
其中，刻蚀工序是在对硅片进行边缘绝缘及背面抛光处理，抛光后背表面平坦，增加了太阳光谱中长波波段的光在硅片背表面的反射，增加透射光返回硅片内部二次吸收，增加电流密度，同时抛光可以减小背面比表面积，提升镀膜质量，提升钝化效果，减少载流子复合；抛光后的硅片背场印刷烧结后产生的铝团聚更容易与硅接触，使背场合金层的有效面积增加。在PERC太阳能电池的制备中，常用酸法进行刻蚀抛光，用酸法进行抛光时的背面平整度差，反射率低，光的透射损失大，减小了光的吸收，降低了电流密度，且影响背面镀膜质量，降低了背膜钝化效果，进而降低了电池的转换效率。
发明内容
本发明要解决的技术问题是：现有酸刻蚀抛光技术造成硅片背面反射率低、电池的转换效率低的问题。
本发明解决该技术问题采用的技术方案是：
一种PERC太阳能电池碱抛光制备方法，步骤包括制绒、扩散、正面激光、刻蚀、退火、背面钝化膜、正面钝化膜、背面激光、丝网印刷、烧结，其特征在于：在所述制绒步骤之前还包括碱抛光步骤、背面沉积二氧化硅膜步骤，所述碱抛光步骤采用氢氧化钾溶液对硅片进行抛光，所述背面沉积二氧化硅膜步骤采用PECVD技术在硅片背面镀上一层二氧化硅掩膜，所述制绒步骤中添加氢氧化钾添加剂进行制绒。
作为优选，所述碱抛光步骤，氢氧化钾溶液中氢氧化钾质量比为百分之二至百分之十，抛光温度为65至85摄氏度，抛光时间为120至200秒，所得碱抛光面反射率控制在百分之四十至百分之五十,抛光后的减重控制在0.2至0.6克。
作为优选，所述背面沉积二氧化硅膜步骤所用气体为硅烷和一氧化二氮，形成的所述二氧化硅掩膜厚度为80至200纳米。
作为优选，所述制绒步骤将硅片放在氢氧化钾质量比为千分之十五至千分之三十、温度为75至85摄氏度的制绒槽中进行制绒，制绒时间300至500秒，减重控制在0.2至0.6克，反射率控制在百分之八至百分之十五。
本发明的有益效果是：与常规的单晶PERC太阳能电池技术相比，本发明在太阳能电池制造过程中采用先抛光，镀SiO2掩膜，再制绒的工艺技术方法，这样既能保证得到较为均匀的绒面，同时又能保证抛光面不被破坏，且在制绒工序中还可以去掉SiO2掩膜，背抛光面大幅度提高了背面反射率，使得长波段透射率明显降低，从而减小光的透射损失，增加电流密度，同时背面平整度提高，有利于提高背膜钝化效果，提高开压，进而提升了电池的转换效率。
附图说明
图1是本发明工艺流程图；
图2是传统PERC太阳能电池制备工艺流程图
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
如图1所示，一种PERC太阳能电池碱抛光制备方法，包括如下步骤：
S1：抛光，选用P型硅为基底材料，将硅片放在KOH质量比为2%-10%，温度为65-85℃的抛光液中反应120-200s抛光，所得碱抛光面反射率控制在40-50%,抛光后的减重控制在0.2-0.6g之间；
S2：背面沉积SiO2膜，使用PERC技术在硅片的背面沉积一层致密的SiO2掩膜，厚度控制在80-200nm；
S3：制绒，将硅片放在KOH质量比为1.5%-3%、温度为75-85℃的制绒槽中进行制绒，制绒时间300-500 s，减重控制在0.2-0.6g，反射率控制在8%-15%；
S4：扩散，使用低压扩散技术，形成PN结，控制扩散后的硅片方阻在100-200Ω/£；
S5：正面激光，使用帝尔激光对硅片正面进行选择性激光掺杂，硅片方阻下降控制在30-70Ω/£；
S6：刻蚀，使用HF/HNO3溶液（比例1：1.5-1：3）去除硅片背表面和侧面的PSG和N型硅，使用HF溶液（浓度3%-10%）去除正面PSG层，减重控制在0.2-0.35g，反射率控制在30-50%；
S7：退火，使用热氧化进行退火处理，温度控制在500-800℃；
S8：背面沉积钝化膜，在硅片的背表面沉积Al2O3/SiNx钝化膜，降低硅片背面复合，钝化膜的厚度控制在70-180nm；
S9：正面沉积SiNx减反膜，降低反射率，减反膜的厚度控制在65-100nm，折射率控制在1.8-2.5；
S10：背面激光，使用帝尔激光对背面钝化膜进行开孔，使铝硅形成欧姆接触，开孔率控制在3%-10%；
S11：丝网印刷和烧结，使用背银浆料、铝浆料和正银浆料在硅片背面形成银背电极和铝背电场，硅片正面形成银正电极，烧结烘干温度300-900℃。
测试本发明和传统方法所制得的PERC电池的电性能，测试结果如下表所示。
| 背反射率（%） | 刻蚀后发射极方阻（Ω/□） | 效率（%） | U<sub>oc</sub>（V） | I<sub>sc</sub>（A） | FF （%） | |
| 本发明方法 | 50 | 76 | 22.15 | 0.6772 | 9.830 | 81.3 |
| 传统方法 | 28 | 76 | 21.95 | 0.6760 | 9.766 | 81.22 |
由本表格可知，本发明实施例制得的单晶PERC太阳能电池的电性能明显优于常规单晶制备工艺的PERC太阳能电池，实施例转换效率增益在0.1%以上。
本发明可改变为多种方式对本领域的技术人员是显而易见的，这样的改变不认为脱离本发明的范围。所有这样的对所述领域技术人员显而易见的修改将包括在本权利要求的范围之内。
Claims (4)
1.一种PERC太阳能电池碱抛光制备方法，步骤包括制绒、扩散、正面激光、刻蚀、退火、背面钝化膜、正面钝化膜、背面激光、丝网印刷、烧结，其特征在于：在所述制绒步骤之前还包括碱抛光步骤、背面沉积二氧化硅膜步骤，所述碱抛光步骤采用氢氧化钾溶液对硅片进行抛光，所述背面沉积二氧化硅膜步骤采用PECVD技术在硅片背面镀上一层二氧化硅掩膜，所述制绒步骤中添加氢氧化钾添加剂进行制绒。
2.如权利要求1所述的PERC太阳能电池碱抛光制备方法，其特征在于：所述碱抛光步骤，氢氧化钾溶液中氢氧化钾质量比为百分之二至百分之十，抛光温度为65至85摄氏度，抛光时间为120至200秒，所得碱抛光面反射率控制在百分之四十至百分之五十,抛光后的减重控制在0.2至0.6克。
3.如权利要求1所述的PERC太阳能电池碱抛光制备方法，其特征在于：所述背面沉积二氧化硅膜步骤所用气体为硅烷和一氧化二氮，形成的所述二氧化硅掩膜厚度为80至200纳米。
4.如权利要求1所述的PERC太阳能电池碱抛光制备方法，其特征在于：所述制绒步骤将硅片放在氢氧化钾质量比为千分之十五至千分之三十、温度为75至85摄氏度的制绒槽中进行制绒，制绒时间300至500秒，减重控制在0.2至0.6克，反射率控制在百分之八至百分之十五。
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