WO2018209728A1 - 管式perc单面太阳能电池及其制备方法和专用设备 - Google Patents
管式perc单面太阳能电池及其制备方法和专用设备 Download PDFInfo
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- WO2018209728A1 WO2018209728A1 PCT/CN2017/086019 CN2017086019W WO2018209728A1 WO 2018209728 A1 WO2018209728 A1 WO 2018209728A1 CN 2017086019 W CN2017086019 W CN 2017086019W WO 2018209728 A1 WO2018209728 A1 WO 2018209728A1
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Definitions
- the silicon wafer will rub against the graphite boat wall, causing the silicon wafer to scratch the side of the graphite boat wall. 2.
- the process gas will diffuse to the other side of the silicon wafer, and the deposition of the film on the other side will be formed. That is, the plating is applied, and the plating at the card point is more serious.
- the present invention provides a tubular PERC single-sided solar cell.
- the utility model comprises a back silver main gate, an all-aluminum back electric field, a back composite film, a P-type silicon, an N-type emitter, a front passivation film and a positive silver electrode; the all-aluminum back electric field, the back composite film, the P-type silicon and the N-type emission a pole, a front passivation film and a positive silver electrode are laminated in series from bottom to top;
- the thickness of the aluminum oxide film is 5-15 nm
- the thickness of the silicon nitride film is 50-150 nm
- the thickness of the silicon oxynitride film is 5-20 nm
- the second The thickness of the silicon oxide film is 1-10 nm.
- FIG. 2 is a schematic view showing the back structure of the tubular PERC single-sided solar cell shown in FIG. 1;
- the bottom layer 31 of the back composite film is a silicon dioxide film
- the second layer 32 is a film of aluminum oxide
- the outer layer 33 is made of a silicon dioxide film, a silicon oxynitride film, and silicon nitride.
- One or more components of the film is a silicon dioxide film, a silicon oxynitride film, and silicon nitride.
- EL electroluminescence
- the P-type silicon on the back side is not in full contact with the aluminum paste, and only the area of the laser is in contact with the aluminum paste, resulting in a large series resistance.
- the present invention selects a lower diffusion square resistance (70-100 ohm/ ⁇ ), which can reduce the series resistance and improve the photoelectric conversion efficiency.
- the silicon oxynitride film is deposited by silane, ammonia gas and nitrous oxide.
- the gas flow rate of silane is 50-200 sccm, the ratio of silane to laughing gas is 1/10-80, the flow rate of ammonia gas is 0.1-5 slm, and the silicon oxynitride film is used.
- the deposition temperature is 350-410 ° C, the time is 50-200 s, and the plasma power is 4000-6000 w;
- the back silver main gate paste is printed on the back side of the silicon wafer and dried.
- the silicon wafer is sintered at a high temperature to form a back silver main gate, an all-aluminum back electric field, and a positive silver electrode.
- the invention can avoid the occurrence of the winding plating in the production process, and substantially solves the problem of the winding plating.
- the invention is of great significance for the photovoltaic solar industry, which is extremely sensitive to cost, without adding another process, simplifying the process and saving costs. .
- the present invention also solves the problem of scratching.
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Abstract
Description
Claims (10)
- 一种管式PERC单面太阳能电池,其特征在于,包括背银主栅、全铝背电场、背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极;所述全铝背电场、背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极从下至上依次层叠连接;所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种,且采用管式PECVD设备在硅片背面沉积而成,所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路,所述四条气体管路单独或组合作用,用于形成所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜;所述管式PECVD设备装卸硅片的器具为石墨舟,石墨舟的卡点槽的深度为0.5-1mm;所述背面复合膜再经过激光开槽后形成30-500个平行设置的激光开槽区,每个激光开槽区内设置至少1组激光开槽单元,所述全铝背电场通过激光开槽区与P型硅相连。
- 如权利要求1所述管式PERC单面太阳能电池,其特征在于,所述石墨舟的卡点槽的深度为0.6-0.8mm,卡点底座的直径为6-15mm,卡点帽的斜面角度为35-45度,卡点帽的厚度为1-1.3mm。
- 如权利要求1所述管式PERC单面太阳能电池,其特征在于,电池背面形成3-5个卡点印。
- 如权利要求1、2或3所述管式PERC单面太阳能电池,其特征在于,所述背面复合膜的底层为三氧化二铝膜,外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
- 如权利要求1、2或3所述管式PERC单面太阳能电池,其特征在于,所述背面复合膜的底层为二氧化硅膜,第二层为三氧化二铝膜,外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
- 如权利要求1所述管式PERC单面太阳能电池,其特征在于,所述三氧化二铝膜的厚度为5-15nm,所述氮化硅膜的厚度为50-150nm,所述氮氧化硅膜的厚度为5-20nm,所述二氧化硅膜的厚度为1-10nm。
- 一种如权利要求1-6任一项所述管式PERC单面太阳能电池的制备方法,其特征在于,包括:(1)在硅片正面和背面形成绒面,所述硅片为P型硅;(2)在硅片正面进行扩散,形成N型发射极;(3)去除扩散过程形成的磷硅玻璃和周边PN结,并对硅片背面进行抛光,背刻蚀深度为3-6微米;(4)对硅片进行退火,退火温度为600-820度,氮气流量为1-15L/min,氧气流量为0.1-6L/min;(5)采用管式PECVD设备在硅片背面沉积背面复合膜,包括:采用TMA与N2O沉积三氧化二铝膜,TMA的气体流量为250-500sccm,TMA与N2O的比例为1/15-25,等离子功率为2000-5000w;采用硅烷、氨气和笑气沉积氮氧化硅膜,硅烷的气体流量为50-200sccm,硅烷与笑气的比例为1/10-80,氨气的流量为0.1-5slm,等离子功率为4000-6000w;采用硅烷和氨气沉积氮化硅膜,硅烷的气体流量为500-1000sccm,硅烷与氨气的比例为1/6-15,氮化硅的沉积温度为390-410℃,时间为300-500s,等离子功率为10000-13000w;采用笑气沉积二氧化硅膜,笑气的流量为0.1-5slm,等离子功率为2000-5000w;所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路,所述管式PECVD设备装卸硅片的器具为石墨舟,石墨舟的卡点槽的深度为0.5-1mm;(6)在硅片正面沉积钝化膜;(7)对硅片背面复合膜上进行激光开槽;其中,激光波长为532nm,激光功率为14w以上,激光划线速度在20m/s 以上,频率500KHZ以上;(8)在硅片背面印刷背银主栅浆料,烘干;(9)在硅片背面采用丝网印刷铝浆,烘干;(10)在硅片正面印刷正银电极浆料;(11)对硅片进行高温烧结,形成背银主栅、全铝背电场和正银电极;(12)对硅片进行抗LID退火,制得管式PERC单面太阳能电池成品。
- 如权利要求7所述的制备方法,其特征在于,采用管式PECVD设备在硅片背面沉积背面复合膜,包括:采用TMA与N2O沉积三氧化二铝膜,TMA的气体流量为250-500sccm,TMA与N2O的比例为1/15-25,三氧化二铝膜的沉积温度为250-300℃,时间为50-300s,等离子功率为2000-5000w;采用硅烷、氨气和笑气沉积氮氧化硅膜,硅烷的气体流量为50-200sccm,硅烷与笑气的比例为1/10-80,氨气的流量为0.1-5slm,氮氧化硅膜的沉积温度为350-410℃,时间为50-200s,等离子功率为4000-6000w;采用硅烷和氨气沉积氮化硅膜,硅烷的气体流量为500-1000sccm,硅烷与氨气的比例为1/6-15,氮化硅膜的沉积温度为390-410℃,时间为300-500s,等离子功率为10000-13000w;采用笑气沉积二氧化硅膜,笑气的流量为0.1-5slm,等离子功率为2000-5000w。
- 一种制备权利要求1-6任一项所述管式PERC单面太阳能电池的专用设备,所述专用设备为管式PECVD设备,其特征在于,管式PECVD设备包括晶片装载区、炉体、特气柜、真空系统、控制系统以及石墨舟,所述特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路以及用于通入笑气的第四气体管路;所述石墨舟用于装卸硅片,所述石墨舟包括卡点,所述卡点包括卡点轴、卡点帽和卡点底座,所述卡点轴安装在卡点底座上,所述卡点帽与卡点轴连接,所述卡点轴与卡点帽、卡点底座之间形成卡点槽,卡点槽的深度为0.5-1mm。
- 如权利要求9所述的专用设备,其特征在于,所述卡点槽的深度为0.6-0.8mm,卡点底座的直径为6-15mm,卡点帽的斜面角度为35-45度,卡点帽的厚度为1-1.3mm。
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US16/612,213 US20200212242A1 (en) | 2017-05-18 | 2017-05-25 | Monofacial tube-type perc solar cell, preparation method thereof, and production device therefor |
EP17909674.8A EP3627561A4 (en) | 2017-05-18 | 2017-05-25 | TUBULAR SINGLE SIDED PERC PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING THEREOF AND ASSOCIATED DEVICE |
JP2019563739A JP6821830B2 (ja) | 2017-05-18 | 2017-05-25 | 管型perc片面太陽電池、その製造方法及びその専用装置 |
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KR102266829B1 (ko) | 2021-06-22 |
JP6821830B2 (ja) | 2021-01-27 |
CN107256894A (zh) | 2017-10-17 |
EP3627561A4 (en) | 2020-10-28 |
EP3627561A1 (en) | 2020-03-25 |
US20200212242A1 (en) | 2020-07-02 |
KR20200006059A (ko) | 2020-01-17 |
JP2020520560A (ja) | 2020-07-09 |
CN107256894B (zh) | 2018-08-10 |
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