CN106711239A - Perc太阳能电池的制备方法及其perc太阳能电池 - Google Patents
Perc太阳能电池的制备方法及其perc太阳能电池 Download PDFInfo
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 32
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 32
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 66
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004332 silver Substances 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 239000011267 electrode slurry Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 239000000047 product Substances 0.000 claims description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 239000004411 aluminium Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 230000009466 transformation Effects 0.000 abstract description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 3
- 238000001035 drying Methods 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- -1 silicon nitrides Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
本发明公开了一种PERC太阳能电池的制备方法及其PERC太阳能电池,包括在P型硅的正面形成绒面;在正面进行扩散,形成N型发射极;去除扩散过程中形成的磷硅玻璃和周边PN结,对背面抛光;在正面沉积氧化硅膜并退火;在正面沉积氮化硅膜,再在背面依次沉积氧化铝膜和氮化硅膜;或者在背面依次沉积氧化铝膜和氮化硅膜,再在正面沉积氮化硅膜;在背面开设开槽,开槽贯通背面氮化硅膜和氧化铝膜;在背面印刷背电极浆料并烘干;在背面印刷铝浆并烘干;在正面印刷正电极浆料;高温烧结,形成背银电极、全铝背场和正银电极,全铝背场位于开槽内部分与P型硅相连;抗LID退火。本发明可提高电池的开路电压和短路电流,提升电池的光电转换效率。
Description
技术领域
本发明涉及太阳能电池技术,尤其涉及一种PERC太阳能电池的制备方法,还涉及由该制备方法制得的PERC太阳能电池。
背景技术
晶硅太阳能电池是一种有效吸收太阳辐射能,利用光生伏打效应把光能转换成电能的器件。当太阳光照射在半导体P-N结上时,会形成新的空穴-电子对,在P-N结电场的作用下,空穴由N区流向P区,电子由P区流向N区,接通电路后就形成电流。
传统的晶硅太阳能电池一般只采用正面钝化技术,在硅片的正面使用PECVD方式沉积一层氮化硅,降低少子在前表面的复合速率,可以大幅度提升晶硅太阳能电池的开路电压和短路电流,从而提升晶硅太阳电池的光电转换效率。
随着当前对晶硅太阳能电池光电转换效率的要求越来越高,人们开始研究PERC背钝化太阳电池技术。但是,具体如何提高PERC太阳能电池的光电转换效率是目前业界亟待解决的技术难题。
发明内容
本发明的第一个目的在于提供一种能够大幅度提高电池的光电转换效率、成本低、工艺简单且与传统生产线兼容性好的PERC太阳能电池的制备方法。
本发明的第二个目的在于提供一种由上述PERC太阳能电池的制备方法制得的PERC太阳能电池。
本发明的第一个目的通过如下的技术方案来实现:一种PERC太阳能电池的制备方法,其特征在于具体包括以下步骤:
⑴在P型硅的正面形成绒面;
⑵在由步骤⑴所得产品的正面进行扩散,形成N型发射极;
⑶去除由步骤⑵所得产品在扩散过程中形成的磷硅玻璃和周边PN结;
⑷对由步骤⑶所得产品的背面进行抛光;
⑸在由步骤⑷所得产品的正面上沉积氧化硅膜并退火;
⑹在由步骤⑸所得产品的正面沉积氮化硅膜,即为正面氮化硅膜,再在背面依次沉积氧化铝膜和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜;或者在由步骤⑸所得产品的背面依次沉积氧化铝膜和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜,再在正面沉积氮化硅膜,即为正面氮化硅膜;
⑺在由步骤⑹所得产品的背面上开设开槽,开槽贯通背面氮化硅膜和氧化铝膜;
⑻在由步骤⑺所得产品的背面印刷背电极浆料并烘干;
⑼在由步骤⑻所得产品的背面印刷铝浆并烘干;
⑽在由步骤⑼所得产品的正面印刷正电极浆料;
⑾对由步骤⑽所得产品进行高温烧结,形成背银电极、全铝背场和正银电极,全铝背场位于开槽内的部分与P型硅相连;
⑿对由步骤⑾所得产品进行抗LID退火即得。
本发明与传统PERC太阳能电池的制备工艺相比,不同之处在于:在N型发射极上沉积了一层薄的氧化硅膜,同时增加了退火工艺,可以改善磷的掺杂浓度分布以及降低在N型发射极表面上磷的掺杂浓度,能够显著提高电池的开路电压和短路电流,从而大幅度提升电池的光电转换效率。另外,本发明制备工艺简单,设备投入成本低,而且与现有生产线兼容性好,对现有生产线进行简单改造后即可使用。本发明结构简单,实用性强,适于广泛推广和适用。
作为本发明的一种实施方式,在所述步骤⑸中,退火的温度为650~900度,时间为20~90min,氮气流量为1~30slm。
作为本发明的一种实施方式,在所述步骤⑺中,采用激光开设开槽。
本发明的第二个目的通过如下的技术方案来实现:一种由上述PERC太阳能电池的制备方法制得的PERC太阳能电池,包括从下至上依次设置的背银电极、全铝背场、背面氮化硅膜、氧化铝膜、P型硅、N型发射极、正面氮化硅膜和正银电极,在所述背面氮化硅膜上开有贯通背面氮化硅膜和氧化铝膜的开槽,所述P型硅露于所述开槽中,全铝背场位于开槽内的部分与所述P型硅相连,其特征在于:在所述N型发射极和正面氮化硅膜之间增设有氧化硅膜。
本发明所述正面氧化硅膜的厚度为5~500nm。
本发明所述背面氮化硅膜的厚度为50~500nm。
本发明所述氧化铝膜的厚度为2~50nm。
与现有技术相比,本发明具有如下显著的效果:
⑴本发明与传统PERC太阳能电池的制备工艺相比,不同之处在于:在N型发射极上沉积了一层薄的氧化硅膜,同时增加了退火工艺,可以改善磷的掺杂浓度分布以及降低在N型发射极表面上磷的掺杂浓度,能够显著提高电池的开路电压和短路电流,大幅度提升电池的光电转换效率。
⑵本发明制备工艺简单,设备投入成本低,而且与现有生产线兼容性好,对现有生产线进行简单改造后即可使用。
⑶本发明结构简单,实用性强,适于广泛推广和适用。
附图说明
下面结合附图和具体实施例对本发明作进一步的详细说明。
图1是本发明实施例1的结构示意图。
具体实施方式
实施例1
本发明一种PERC太阳能电池的制备方法,具体包括以下步骤:
⑴在P型硅5的正面形成绒面;
⑵在由步骤⑴所得产品的正面进行扩散,形成N型发射极6;
⑶去除由步骤⑵所得产品在扩散过程中形成的磷硅玻璃和周边PN结;
⑷对由步骤⑶所得产品的背面进行抛光;
⑸对由步骤⑷所得产品的正面上沉积氧化硅膜10并退火,温度为650度,时间为20min,氮气流量为1slm;
⑹在由步骤⑸所得产品的背面沉积氧化铝膜4和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜3,再在正面沉积氮化硅膜,即为正面氮化硅膜7;氧化铝膜的厚度为2nm,正面氧化硅膜7的厚度为5nm,背面氮化硅膜3的厚度为50nm;
⑺在由步骤⑹所得产品的背面上采用激光开设开槽2,开槽2贯通背面氮化硅膜3和氧化铝膜4;
⑻在由步骤⑺所得产品的背面印刷背电极浆料并烘干;
⑼在由步骤⑻所得产品的背面印刷铝浆并烘干;
⑽在由步骤⑼所得产品的正面印刷正电极浆料;
⑾对由步骤⑽所得产品进行高温烧结,形成背银电极12、全铝背场11和正银电极8;全铝背场11位于开槽2内的部分21与P型硅5相连;
⑿对由步骤⑾所得产品进行抗LID退火即得。
本发明与传统PERC太阳能电池的制备工艺相比,不同之处在于:在N型发射极上沉积了一层薄的氧化硅膜,同时增加了退火工艺,可以改善磷的掺杂浓度分布以及降低在N型发射极表面上磷的掺杂浓度,能够显著提高电池的开路电压和短路电流,从而大幅度提升电池的光电转换效率。
如图1所示,一种由上述PERC太阳能电池的制备方法制得的PERC太阳能电池,包括从下至上依次设置的背银电极12、全铝背场11、背面氮化硅膜3、氧化铝膜4、P型硅5、N型发射极6、氧化硅膜10、正面氮化硅膜7和正银电极8,正银电极8主要由正银电极副栅和正银电极主栅相连而成。在背面氮化硅膜3上开有贯通背面氮化硅膜3和氧化铝膜4的开槽2,P型硅5露于开槽2中,全铝背场11位于开槽2内的部分21与P型硅5相连。正面氧化硅膜10的厚度为5nm,背面氮化硅膜3的厚度为50nm,氧化铝膜4的厚度为2nm。
实施例2
本实施例的PERC太阳能电池与实施例1的不同之处在于:正面氧化硅膜的厚度为300nm,背面氮化硅膜的厚度为300nm,氧化铝膜的厚度为25nm。
一种PERC太阳能电池的制备方法,具体包括以下步骤:
⑴在P型硅5的正面形成绒面;
⑵在由步骤⑴所得产品的正面进行扩散,形成N型发射极6;
⑶去除由步骤⑵所得产品在扩散过程中形成的磷硅玻璃和周边PN结;
⑷对由步骤⑶所得产品的背面进行抛光;
⑸对由步骤⑷所得产品的正面上沉积氧化硅膜10并退火,温度为800度,时间为60min,氮气流量为20slm;
⑹在由步骤⑸所得产品的背面沉积氧化铝膜4和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜3,再在正面沉积氮化硅膜,即为正面氮化硅膜7;氧化铝膜的厚度为25nm,正面氧化硅膜7的厚度为300nm,背面氮化硅膜3的厚度为300nm;
⑺在由步骤⑹所得产品的背面上采用激光开设开槽2,开槽2贯通背面氮化硅膜3和氧化铝膜4;
⑻在由步骤⑺所得产品的背面印刷背电极浆料并烘干;
⑼在由步骤⑻所得产品的背面印刷铝浆并烘干;
⑽在由步骤⑼所得产品的正面印刷正电极浆料;
⑾对由步骤⑽所得产品进行高温烧结,形成背银电极12、全铝背场11和正银电极8;全铝背场11位于开槽2内的部分21与P型硅5相连;
⑿对由步骤⑾所得产品进行抗LID退火即得。
实施例3
本实施例的PERC太阳能电池与实施例1的不同之处在于:正面氧化硅膜的厚度为500nm,背面氮化硅膜的厚度为500nm,氧化铝膜的厚度为50nm。
一种PERC太阳能电池的制备方法,具体包括以下步骤:
⑴在P型硅5的正面形成绒面;
⑵在由步骤⑴所得产品的正面进行扩散,形成N型发射极6;
⑶去除由步骤⑵所得产品在扩散过程中形成的磷硅玻璃和周边PN结;
⑷对由步骤⑶所得产品的背面进行抛光;
⑸对由步骤⑷所得产品的正面上沉积氧化硅膜10并退火,温度为900度,时间为90min,氮气流量为30slm;
⑹在由步骤⑸所得产品的背面依次沉积氧化铝膜4和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜3,再在正面沉积氮化硅膜,即为正面氮化硅膜7。氧化铝膜的厚度为50nm,正面氧化硅膜7的厚度为500nm,背面氮化硅膜3的厚度为500nm;
⑺在由步骤⑹所得产品的背面上采用激光开设开槽2,开槽2贯通背面氮化硅膜3和氧化铝膜4;
⑻在由步骤⑺所得产品的背面印刷背电极浆料并烘干;
⑼在由步骤⑻所得产品的背面印刷铝浆并烘干;
⑽在由步骤⑼所得产品的正面印刷正电极浆料;
⑾对由步骤⑽所得产品进行高温烧结,形成背银电极12、全铝背场11和正银电极8;全铝背场11位于开槽2内的部分21与P型硅5相连;
⑿对由步骤⑾所得产品进行抗LID退火即得。
本发明的实施方式不限于此,根据本发明的上述内容,按照本领域的普通技术知识和惯用手段,在不脱离本发明上述基本技术思想前提下,本发明退火的温度、时间和氮气流量还具有其它实施方式;而正面氧化硅膜、背面氮化硅膜和氧化铝膜的厚度也还具有其它实施方式。因此,本发明还可以做出其它多种形式的修改、替换或变更,均落在本发明权利保护范围之内。
Claims (7)
1.一种PERC太阳能电池的制备方法,其特征在于具体包括以下步骤:
⑴在P型硅的正面形成绒面;
⑵在由步骤⑴所得产品的正面进行扩散,形成N型发射极;
⑶去除由步骤⑵所得产品在扩散过程中形成的磷硅玻璃和周边PN结;
⑷对由步骤⑶所得产品的背面进行抛光;
⑸在由步骤⑷所得产品的正面上沉积氧化硅膜并退火;
⑹在由步骤⑸所得产品的正面沉积氮化硅膜,即为正面氮化硅膜,再在背面依次沉积氧化铝膜和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜;或者在由步骤⑸所得产品的背面依次沉积氧化铝膜和氮化硅膜,所沉积的氮化硅膜即为背面氮化硅膜,再在正面沉积氮化硅膜,即为正面氮化硅膜;
⑺在由步骤⑹所得产品的背面上开设开槽,开槽贯通背面氮化硅膜和氧化铝膜;
⑻在由步骤⑺所得产品的背面印刷背电极浆料并烘干;
⑼在由步骤⑻所得产品的背面印刷铝浆并烘干;
⑽在由步骤⑼所得产品的正面印刷正电极浆料;
⑾对由步骤⑽所得产品进行高温烧结,形成背银电极、全铝背场和正银电极,全铝背场位于开槽内的部分与P型硅相连;
⑿对由步骤⑾所得产品进行抗LID退火即得。
2.根据权利要求1所述的制备方法,其特征在于:在所述步骤⑸中,退火的温度为650~900度,时间为20~90min,氮气流量为1~30slm。
3.根据权利要求2所述的制备方法,其特征在于:在所述步骤⑺中,采用激光开设开槽。
4.一种由权利要求1所述PERC太阳能电池的制备方法制得的PERC太阳能电池,包括从下至上依次设置的背银电极、全铝背场、背面氮化硅膜、氧化铝膜、P型硅、N型发射极、正面氮化硅膜和正银电极,在所述背面氮化硅膜上开有贯通背面氮化硅膜和氧化铝膜的开槽,所述P型硅露于所述开槽中,全铝背场位于开槽内的部分与所述P型硅相连,其特征在于:在所述N型发射极和正面氮化硅膜之间增设有氧化硅膜。
5.根据权利要求4所述的PERC太阳能电池,其特征在于:所述正面氧化硅膜的厚度为5~500nm。
6.根据权利要求5所述的PERC太阳能电池,其特征在于:所述背面氮化硅膜的厚度为50~500nm。
7.根据权利要求6所述的PERC太阳能电池,其特征在于:所述氧化铝膜的厚度为2~50nm。
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