WO2020252827A1 - 一种p型晶体硅背面电极的制备方法 - Google Patents

一种p型晶体硅背面电极的制备方法 Download PDF

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WO2020252827A1
WO2020252827A1 PCT/CN2019/095752 CN2019095752W WO2020252827A1 WO 2020252827 A1 WO2020252827 A1 WO 2020252827A1 CN 2019095752 W CN2019095752 W CN 2019095752W WO 2020252827 A1 WO2020252827 A1 WO 2020252827A1
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weight
crystalline silicon
type crystalline
zinc
boron
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PCT/CN2019/095752
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English (en)
French (fr)
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朱鹏
杨贵忠
陈艳美
王叶青
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南通天盛新能源股份有限公司
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Priority to US17/431,387 priority Critical patent/US11784277B2/en
Publication of WO2020252827A1 publication Critical patent/WO2020252827A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of solar cells, and specifically relates to a method for preparing a P-type crystalline silicon back electrode.
  • the solar cells on the market are mainly crystalline silicon solar cells, and considering the maturity of technology, photoelectric conversion efficiency and raw material sources, the key development object of photovoltaic solar cells will continue to be silicon solar cells for a long time in the future. . Therefore, how to further improve the photoelectric conversion efficiency of crystalline silicon solar cells is one of the continuous pursuit goals of the industry.
  • Aluminum back field is a typical back surface passivation structure commonly used in modern crystalline silicon solar cells. After years of development, the production process of aluminum back field has gradually become mature and stable. Various researches on aluminum back field have also Increasingly deepening, these all indicate that the aluminum back field will still be widely used in crystalline silicon solar cells for a long time in the future, and it will make a significant contribution to improving the conversion efficiency of the cells.
  • the current preparation process of the traditional crystalline silicon solar cell is to prepare the PN junction from the raw material bare silicon after pre-cleaning and texturing, and then to etch and remove the PSG phosphosilicate glass layer, and then make the blue by PECVD anti-reflection film.
  • the back silver paste is printed by the screen printing process to prepare the back silver electrode.
  • the back aluminum paste is printed to prepare the aluminum back field.
  • the front silver paste is printed to prepare the front silver electrode. Short-term high-temperature co-sintering to form a cell.
  • PERC batteries require PERC back silver paste.
  • they should also have the following elements: (1) Low activity and reduced The reaction between the glass powder and the passivation film prevents the formation of a large number of composite centers in the contact part of the silver paste and the silicon wafer, and increases the open circuit voltage of the cell; (2) A wider process window is suitable for low-temperature sintering process; (3) Excellent adhesion and Aging adhesion.
  • the main role of the back silver paste is to simply confluence and solder joints, and does not assume contact with silicon.
  • Printing the back silver paste directly on the aluminum paste may cause two problems. First, the contact between silver and aluminum will affect the welding performance of the back electrode; second, the edge of the back electrode needs to be covered by the aluminum back field, which increases the back electrode The width increases the cost of back electrode paste.
  • the present invention provides a method for preparing a P-type crystalline silicon back electrode.
  • the specific content of the invention is as follows:
  • the purpose of the present invention is a method for preparing a P-type crystalline silicon back electrode, including double-sided texturing on P-type crystalline silicon, coating on the front side of P-type crystalline silicon, and back-plating passivation on the back of P-type crystalline silicon.
  • the preparation method of the back electrode is as follows:
  • step (1) the linear intermediate layer-glass paste is superimposed on the back silver electrode, and then dried at 150-250°C for 1 to 2 minutes, with a width of 0.6-2mm and a height of 3-8 ⁇ m, adjacent to the two Each back electrode is 13-30.4mm, which is the back electrode of P-type crystalline silicon.
  • the linear intermediate layer-glass paste in the step (1) is prepared by mixing bismuth-boron-zinc-vanadium system glass powder and an organic carrier, and the linear intermediate layer- The weight of the glass paste is 100%, the weight of the bismuth-boron-zinc-vanadium system glass powder is 30-50%, and the weight of the organic carrier is 50-70%.
  • the weight of the bismuth-boron-zinc-vanadium system glass powder is 100%, and the weight of the bismuth-boron-zinc-vanadium system glass powder is 10-40% by weight.
  • Bismuth oxide, 5-25% by weight boron oxide, 5-25% by weight zinc oxide, 10-35% by weight vanadium oxide, 4-8% by weight strontium carbonate and weight 0-4% gallium oxide is prepared by melting.
  • the glass transition temperature of the bismuth-boron-zinc-vanadium system glass powder is 300-400°C, and the median particle size of the bismuth-boron-zinc-vanadium system glass powder The diameter D 50 is 2 to 3 ⁇ m.
  • the organic vehicle includes an organic resin, an organic solvent and an organic auxiliary agent, and the organic vehicle is 100%, and the weight fraction of the organic resin is 10-30%, The weight fraction of the organic solvent is 60% to 80%, and the weight fraction of the organic auxiliary agent is 5 to 15%.
  • the organic resin is selected from at least one of ethyl cellulose and butyl cellulose acetate.
  • the organic solvent is selected from one or more of terpineol, dodecyl alcohol, butyl carbitol, butyl carbitol acetate, and glycerin.
  • the organic auxiliary agent is selected from at least one of stearic acid and stearic acid derivatives, unsaturated fatty acids, modified hydrogenated castor oil, and polyamide wax.
  • the back silver electrode in the step (2) is prepared by mixing flake silver powder, lead-boron-zinc-barium glass powder and organic carrier and then grinding and dispersing.
  • the weight of the back silver electrode is 100%, the weight percentage of the flake silver powder is 60-80%, the weight percentage of the lead-boron-zinc-barium glass powder is 10-15%, and the weight of the organic carrier The percentage is 5-20%, the median diameter D50 of the flaky silver powder is 5-6 ⁇ m, the glass transition temperature of the lead-boron-zinc-barium glass powder is 350-450°C, and the lead -The median diameter D50 of the boron-zinc-barium glass powder is 0.5 to 1 ⁇ m.
  • the weight of the lead-boron-zinc-barium glass powder is 100%, and the lead-boron-zinc-barium glass powder is 50-60% by weight. It is prepared by melting of lead oxide, 10-30% by weight of boron oxide, 5-20% by weight of zinc oxide, and 1-10% by weight of barium oxide.
  • the back electrode of the present invention is first printed with a linear intermediate layer-glass paste, and then a layer of silver electrode is superimposed on the linear intermediate layer-glass paste.
  • Printing a layer of linear intermediate layer-glass paste can prevent silver-aluminum interpenetration
  • the linear intermediate layer-glass paste adheres well to the silver layer and aluminum layer, and the linear intermediate layer-glass paste has a low melting point and can penetrate into the aluminum paste to provide tension, and the linear intermediate layer-glass paste of the present invention does not Destroy the passivation layer, make good contact with silver and aluminum, and do not affect the conductivity.
  • the glass powder of the linear intermediate layer-glass paste prepared by the present invention has good leveling properties, and can effectively prevent silver from penetrating into the aluminum paste during the sintering of the back electrode at 400°C.
  • the glass also has a strong promotion
  • the sintering ability of aluminum powder can make the aluminum paste under the covered surface of the glass paste sinter more compact, which can effectively reduce the contact resistance and provide good tensile force.
  • the back electrode of P-type crystalline silicon is prepared by the method of the invention, which can form a complete all-aluminum back field, improve the field passivation characteristics of the electrode area, reduce carrier matching, and no silver enters the silicon substrate, and no leakage occurs. Reduce battery leakage current and improve photoelectric conversion efficiency.
  • the electrode width can be reduced and the cost can be reduced without considering overprinting.
  • Preparation of intermediate-glass paste taking the mass of the linear intermediate layer-glass paste as 100%, weigh 40% by weight of the bismuth-boron-zinc-vanadium system glass powder and 12% by weight of ethyl Cellulose, 21% by weight terpineol, 21% by weight of alcohol ester twelve, 3% by weight of unsaturated fatty acids and 3% by weight of modified hydrogenated castor oil, weigh the above After the materials are mixed uniformly, they are ground and dispersed to obtain an intermediate-glass paste.
  • Preparation of lead-boron-zinc-barium glass powder taking the weight of the lead-boron-zinc-barium glass powder as 100%, weigh 55% by weight of lead oxide, 20% by weight of boron oxide, 20% by weight of zinc oxide and 5% by weight of barium oxide, and then use a known mixer such as a disperser or three-roller to mix the materials uniformly, and then dry for 3.5h, and then dry the
  • the raw materials are transferred to the crucible, and then the crucible containing the raw materials is placed in the heating chamber to first raise the temperature to 950°C, then keep it for 1.5h, and then pass the molten material through the cooling roll to obtain the lead-boron-zinc-barium system glass frit, and then the lead - B - zinc - pulverizing barium glass powder, sieved to give a median particle diameter D 50 of 0.8 m, a glass transition temperature is 400 °C lead - B - zinc - barium glass frit.
  • Preparation of silver paste take the weight of the back silver electrode as 100%, weigh 70% by weight of flake silver powder, and 12.5% by weight of lead-boron-zinc-barium glass powder (glass in silver paste) It is not the same type as the glass in the middle layer) and 17.5% organic carrier, in which the median diameter D 50 of flake silver powder is 5.5 ⁇ m, the weight percentage is 5%-10% glass powder and 20%-25% organic As the carrier, the weighed materials are uniformly mixed, and then ground and dispersed to obtain a silver paste for use with the linear intermediate layer-glass paste.
  • a method for preparing P-type crystalline silicon back electrode the specific steps are as follows:
  • a back passivation layer is plated on the back of the P-type crystalline silicon, and SiN x or Al 2 O 3 is used to form a passivation layer on the back of the battery as a back reflector to increase the absorption of long-wave light and maximize the potential difference between the PN electrodes. Reduce electronic recombination, thereby improving battery conversion efficiency;
  • This local point contact method can reduce the electrode contact area and reduce Electrode recombination
  • the front and back sides of the P-type crystalline silicon are respectively metalized.
  • the technical point is that the method for the back metal of the P-type crystalline silicon includes:
  • Carry out double-sided texturing on P-type crystalline silicon coat the front surface of P-type crystalline silicon, plate the back passivation layer on the back of P-type crystalline silicon, and slot on the back surface of the crystalline silicon.
  • the preparation method of the back electrode of P-type crystalline silicon is as follows:
  • step (1) the linear intermediate layer-glass paste is superimposed on the back silver electrode, and then sintered at 200°C for 1.5s.
  • the silver electrode has a line width of 1 mm and a line height of 5.5 ⁇ m.
  • the distance between the silver electrodes is 22mm, and the back electrode of P-type crystalline silicon is obtained.
  • Preparation of intermediate-glass paste taking the mass of the linear intermediate layer-glass paste as 100%, weigh 30% by weight of bismuth-boron-zinc-vanadium system glass powder and 7% by weight of butyl acetate Base cellulose, 28% by weight of butyl carbitol, 28% by weight of butyl carbitol acetate, 4% by weight of polyamide wax and 3% by weight of modified hydrogenated Castor oil, after mixing the above weighed materials evenly, then grinding and dispersing to obtain intermediate-glass paste.
  • Preparation of lead-boron-zinc-barium series glass powder taking the weight of the lead-boron-zinc-barium series glass powder as 100%, weigh 60% by weight of lead oxide, 15% by weight of boron oxide, 15% by weight of zinc oxide and 10% by weight of barium oxide, then use a known mixer such as a disperser or three-roller to mix the materials uniformly, and then dry for 3 hours, and then dry the raw materials Transfer to the crucible, then place the crucible containing the raw materials in the heating chamber, firstly raise the temperature to 1050°C, then keep it for 1 hour, and then pass the molten material through the cooling roller to obtain the lead-boron-zinc-barium series glass powder , Then the lead-boron-zinc-barium glass powder is crushed and sieved to obtain the lead-boron-zinc-barium glass powder with a median diameter D 50 of 1 ⁇ m and a glass transition temperature of 350°C.
  • a known mixer such as a disperser or three-
  • Preparation of silver paste taking the weight of the back silver electrode as 100%, weigh 80% by weight of flake silver powder, 15% by weight of lead-boron-zinc-barium glass powder and 5% of organic carrier wherein the silver flake median diameter D 50 of 5 m, above the weighed materials mixed and then milled dispersion, obtained with the linear intermediate layer - glass paste with a silver paste for use.
  • a method for preparing P-type crystalline silicon back electrode the specific steps are as follows:
  • a back passivation layer is plated on the back of the P-type crystalline silicon, and SiN x or Al 2 O 3 is used to form a passivation layer on the back of the battery as a back reflector to increase the absorption of long-wave light and maximize the potential difference between the PN electrodes. Reduce electronic recombination, thereby improving battery conversion efficiency;
  • This local point contact method can reduce the electrode contact area and reduce Electrode recombination
  • the front and back sides of the P-type crystalline silicon are respectively metalized.
  • the technical point is that the method for the back metal of the P-type crystalline silicon includes:
  • P-type crystalline silicon Including double-sided texturing on P-type crystalline silicon, plating on the front of P-type crystalline silicon, plating on the back of P-type crystalline silicon with a back passivation layer, grooving on the back surface of the crystalline silicon, and then separately preparing P-type crystalline silicon
  • the front and back electrodes of P-type crystalline silicon are prepared as follows:
  • step (1) the linear intermediate layer-glass paste is superimposed on the back silver electrode, and then dried at 150°C for 2 minutes.
  • the silver electrode has a line width of 0.6mm and a line height of 3 ⁇ m.
  • the distance between the silver electrodes is 13 mm, and the back electrode of P-type crystalline silicon is obtained.
  • Preparation of intermediate-glass paste taking the mass of the linear intermediate layer-glass paste as 100%, weigh 50% by weight of the bismuth-boron-zinc-vanadium system glass powder and 7% by weight of ethyl Cellulose, 8% by weight butyl cellulose acetate, 15% by weight glycerin, 15% by weight alcohol ester twelve, 2% by weight polyamide wax and 3% by weight Butyl carbitol acetate, after the above weighed materials are uniformly mixed, then ground and dispersed to obtain an intermediate-glass paste.
  • Preparation of lead-boron-zinc-barium glass powder taking the weight of the lead-boron-zinc-barium glass powder as 100%, weigh 60% by weight of lead oxide, 20% by weight of boron oxide, 15% by weight of zinc oxide and 5% by weight of barium oxide, then use a known mixer such as a disperser or three-roller to mix the materials uniformly, and then dry for 3 hours, and then dry the raw materials Transfer to the crucible, then place the crucible containing the raw materials in the heating chamber, firstly raise the temperature to 1050°C, then keep it for 1 hour, and then pass the molten material through the cooling roller to obtain the lead-boron-zinc-barium series glass powder Then, the lead-boron-zinc-barium glass powder is crushed and sieved to obtain a lead-boron-zinc-barium glass powder with a median diameter D 50 of 0.5 ⁇ m and a glass transition temperature of 350°C.
  • a known mixer such as a disperser or three-
  • Preparation of silver paste take the weight of the back silver electrode as 100%, weigh 80% by weight of flake silver powder, 10% by weight of lead-boron-zinc-barium glass powder and 10% of organic carrier , The median diameter D 50 of the flake silver powder is 6 ⁇ m. After the weighed materials are mixed uniformly, they are ground and dispersed to obtain a silver paste for use with the linear intermediate layer-glass paste.
  • a method for preparing P-type crystalline silicon back electrode the specific steps are as follows:
  • a back passivation layer is plated on the back of the P-type crystalline silicon, and SiN x or Al 2 O 3 is used to form a passivation layer on the back of the battery as a back reflector to increase the absorption of long-wave light and maximize the potential difference between the PN electrodes. Reduce electronic recombination, thereby improving battery conversion efficiency;
  • This local point contact method can reduce the electrode contact area and reduce Electrode recombination
  • the front and back sides of the P-type crystalline silicon are respectively metalized.
  • the technical point is that the method for the back metal of the P-type crystalline silicon includes:
  • P-type crystalline silicon Including double-sided texturing on P-type crystalline silicon, plating on the front of P-type crystalline silicon, plating on the back of P-type crystalline silicon with a back passivation layer, grooving on the back surface of the crystalline silicon, and then separately preparing P-type crystalline silicon
  • the front and back electrodes of P-type crystalline silicon are prepared as follows:
  • step (1) the linear intermediate layer-glass paste is superimposed on the back silver electrode, and then dried at 250°C for 2 minutes.
  • the silver electrode has a line width of 2mm and a line height of 5 ⁇ m.
  • the distance between the silver electrodes is 30.4 mm, and the back electrode of P-type crystalline silicon is obtained.
  • barrier layer comprising by weight a slurry in accordance with the following: particle diameter D 50 and ZrN 0.1 ⁇ m of TiN, the particle diameter D 50 0.3 ⁇ m and BN x VN x, particle diameter D 50 of 0.3
  • particle diameter D 50 and ZrN 0.1 ⁇ m of TiN the particle diameter D 50 0.3 ⁇ m and BN x VN x
  • particle diameter D 50 of 0.3 There are 67 parts of Al 2 O 3 and SiO 2 in ⁇ m, 3 parts of lead-free glass powder with D 50 of 0.7 ⁇ m and softening point of 500° C., 29.8 parts of organic binder, and 0.2 part of organic additives.
  • the backing silver paste includes the following parts by weight: 42 parts of hollow spherical silver powder with special requirements of purity greater than 99.99%, 15 parts of flake silver powder, and lead-free glass 2.5 parts of powder, 40.1 parts of organic binder, 0.4 parts of organic additives; wherein the hollow spherical silver powder has a particle size D50 of 1 ⁇ m, and the flake silver powder has a particle size D50 of 6 ⁇ m.
  • the silver powder, organic binder, and inorganic After mixing the binding agent and organic additives in a certain proportion, grind it 6 times with a three-roll mill to make it evenly dispersed to a fineness of ⁇ 15 ⁇ m, which is the back silver paste prepared for matching use.
  • the preparation method of the back electrode of solar cell print or spray a layer of conductive resistance barrier layer paste on the back aluminum paste, and print the barrier layer paste directly on the back aluminum electrode. After drying, print the matching back silver paste on it The material is dried and sintered to form the back electrode.
  • the performance detection analysis of the present invention is as follows:
  • the method of the present invention can maintain good contact with silver and aluminum without destroying the passivation layer without affecting the conductivity.
  • the present invention can form a complete all-aluminum back field and improve the electrode area.
  • the field passivation characteristic reduces the carrier coincidence, no silver enters the silicon matrix, and no leakage occurs, which reduces the battery leakage current and improves the photoelectric conversion efficiency.
  • the present invention is not limited to the above-mentioned best embodiments.
  • anyone can derive other products in various forms under the enlightenment of the present invention, but regardless of any changes in its shape or structure, any products that are the same or similar to those of this application Approximate technical solutions fall within the protection scope of the present invention.

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Abstract

本发明公开了一种P型晶体硅背面电极的制备方法，该背面电极的制备方法是：在P型晶体硅背面钝化层上印刷全铝浆，然后在全铝浆上印刷线性中间层-玻璃浆，最后在线性中间层-玻璃浆上叠印背面银电极，采用本方法制备的太阳能电池，可以在不破坏钝化层的同时，还可以保持与银铝接触良好，也不影响导电性，本发明可以形成完整的全铝背场提高了电极区域的场钝化特性，减少载流子符合，没有银进入硅基体，不会产生漏电，降低电池漏电流，提高光电转换效率。

Description

一种P型晶体硅背面电极的制备方法 技术领域
本发明属于太阳能电池领域，具体涉及一种P型晶体硅背面电极的制备方法。
背景技术
随着现代工业的快速发展，地球上的天然能源石油、煤炭、天然气等在逐渐消耗殆尽，随之而来的能源危机、温室效应和环境污染日益严重，这就迫使人类寻求可替代天然能源的新型清洁能源。目前太阳已经逐渐成为新型能源的有效提供者。太阳能能将太阳能转换为电能，是所有清洁能源中对太阳能转换环节最少、利用最直接的方式。
目前市面上的太阳能电池是晶体硅太阳能电池为主的，且从技术成熟度、光电转换效率和原材料来源等考虑，今后很长一段时间内光伏太阳能电池的重点发展对象仍将是硅系太阳能电池。因此如何进一步提高晶体硅太阳能电池的光电转换效率是业界持续不断的追求目标之一。
铝背场(BSF)是现代晶体硅太阳能电池普遍采用的典型的背表面钝化结构，经过多年的发展，铝背场的生产工艺已逐步趋向成熟、稳定，对铝背场的各项研究也日益深化，这些都表明在今后相当长一段时间内铝背场仍将广泛用于晶体硅太阳能电池，对于提高电池的转化效率具有重大贡献。
因此目前传统晶体硅太阳能电池片的制备工艺流程是将原料裸硅片经前清洗制绒后，进行扩散制备PN结，再刻蚀去除PSG磷硅玻璃层，经PECVD镀减反膜制成蓝膜片后，先用丝网印刷工艺印刷背面银浆制备背面银电极，经烘干后印刷背面铝浆制备铝背场，烘干后再印刷正面银浆制备正面银电极，然后经烘干和短时高温共烧结形成电池片。
PERC电池对于PERC背面银浆要求，除需具备传统晶硅电池背银所必需的良好的印刷性能和较低的银含量特性之外，还应当具备如下几条要素：(1)低活性，减少玻璃粉与钝化膜的反应，避免银浆与硅片接触部分形成大量复合中心，提高电池片开路电压；(2)较宽的工艺窗口，适应低温烧结工艺；(3)优秀的附着力及老化附着力。
在PERC电池中，背银浆料主要作用是单纯的汇流及焊接点，并不承担与硅的接触。将背银浆料直接印刷在铝浆上，可能会造成两种问题，首先，银铝的互相接触会影响背电极的焊接性能；其次，背电极边缘需要被铝背场覆盖，增加了背电极宽度，增加了背电极浆料成本。
发明内容
发明目的：为了解决现有技术的不足，本发明提供了一种P型晶体硅背面电极的制备方法，具体发明内容如下：
技术方案：本发明的目的是一种P型晶体硅背面电极的制备方法，包括在P型晶体硅上进行双面制绒，在P型晶体硅正面镀膜，在P型晶体硅背面镀背面钝化层，在背面度化层上开槽，然后分别对制备P型晶体硅的正面和背面电极，其技术点在于：所示背面电极的制备方法如下：
(1)在所述背面钝化层上印刷全铝浆并烘干，然后在所述P型晶体硅背面钝化层上印刷全铝浆于150～250℃烘干2.5～3.5min，在背极位置处先印刷一层线性中间层-玻璃浆，于150～250℃烘干2.5～3.5min，所述线性中间层-玻璃浆的宽为0.6-2mm，高为2-5μm，相邻所述两个线性中间层-玻璃浆为13-30.4mm；
(2)在步骤(1)所述线性中间层-玻璃浆叠印背面银电极，然后于150～250℃烘干1～2min，宽为0.6-2mm，高为3-8μm，相邻所述两个背电极13-30.4mm，即得P型晶体硅的背面电极。
在本发明的有的实施例中，所述的步骤(1)中的线性中间层-玻璃浆由铋-硼-锌-钒体系玻璃粉和有机载体混合制得，以所述线性中间层-玻璃浆的重量为100％，所述铋-硼-锌-钒体系玻璃粉的重量为30～50％，所述有机载体的重量为50～70％。
在本发明的有的实施例中，以所述铋-硼-锌-钒体系玻璃粉的重量为100％，所述铋-硼-锌-钒体系玻璃粉由重量百分比为10～40％的氧化铋、重量百分比为5～25％的氧化硼、重量百分比为5～25％的氧化锌、重量百分比为10～35％的氧化钒、重量百分比为4～8％的碳酸锶和重量百分比为0～4％的氧化镓熔融制备而成。
在本发明的有的实施例中，所述的铋-硼-锌-钒体系玻璃粉的玻璃化转变温度为300～400℃，所述铋-硼-锌-钒体系玻璃粉的中值粒径D 50为2～3μm。
在本发明的有的实施例中，所述的有机载体包括有机树脂、有机溶剂和有机助剂，以所述的有机载体为100％，所述的有机树脂的重量分数为10～30％，所述的有机溶剂的重量分数为60％～80％，所述的有机助剂的重量分数为5～15％。
在本发明的有的实施例中，所述的有机树脂选自乙基纤维素、醋酸丁基纤维素中的至少一种。
在本发明的有的实施例中，所述的有机溶剂选自松油醇、醇酯十二、丁基卡必醇、丁基卡必醇乙酸酯、甘油中的一种或几种。
在本发明的有的实施例中，所述的有机助剂选自硬脂酸及硬脂酸衍生物、不饱脂肪酸、改性氢化蓖麻油、聚酰胺蜡中的至少一种。
在本发明的有的实施例中，所述的步骤(2)中的背面银电极由片状银粉、铅-硼-锌-钡系玻璃粉和有机载体混合后研磨分散制备得到，以所述背面银电极的重量为100％，所述片状银粉的重量百分比为60～80％，所述铅-硼-锌-钡系玻 璃粉的重量百分比为10～15％，所述有机载体的重量百分比为5～20％，所述片状银粉的中值粒径D50为5～6μm，所述的铅-硼-锌-钡系玻璃粉的璃化转变温度为350～450℃，所述铅-硼-锌-钡系玻璃粉的中值粒径D50为0.5～1μm。
在本发明的有的实施例中，以所述铅-硼-锌-钡系玻璃粉的重量为100％，所述的铅-硼-锌-钡系玻璃粉由重量百分比为50～60％的氧化铅、重量百分比为10～30％的氧化硼、重量百分比为5～20％的氧化锌和重量百分比为1～10％的氧化钡熔融制备而成。
本发明的有益效果：本发明的具体优势如下：
1.本发明的背面电极采用先印刷一层线性中间层-玻璃浆，然后再在线性中间层-玻璃浆上叠印一层银电极，印刷一层线性中间层-玻璃浆能阻止银铝互渗，且线性中间层-玻璃浆与银层和铝层的附着均良好，且线性中间层-玻璃浆的熔点低，能渗透到铝浆内部提供拉力，且本发明的线性中间层-玻璃浆不破坏钝化层，与银铝接触良好，也不影响导电性。
2.本发明制备该线性中间层-玻璃浆的玻璃粉具有良好的流平性，在400℃背电极烧结的过程中能有效的阻挡银往铝浆里面渗透，该玻璃还具有较强的促进铝粉烧结的能力，可以使玻璃浆覆盖面下面的铝浆烧结较致密，能有效的降低接触电阻和提供良好的拉力。
3.采用发明的方法制备P型晶体硅的背面电极，可以形成完整的全铝背场提高了电极区域的场钝化特性，减少载流子符合，没有银进入硅基体，不会产生漏电，降低电池漏电流，提高光电转换效率。
4.采用发明的方法制备P型晶体硅的背面电极与常规相比，不用考虑套印，可降低电极宽度，降低成本。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述，以使本领域的技术人员能够更好的理解本发明的优点和特征，从而对本发明的保护范围做出更为清楚的界定。本发明所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
1.线性中间层-玻璃浆的制备
铋-硼-锌-钒体系玻璃粉的制备：以铋-硼-锌-钒体系玻璃粉的重量为100％，称取重量百分比为25％的氧化铋、重量百分比为20％的氧化硼、重量百分比为20％的氧化锌、重量百分比为27％的氧化钒、重量百分比为6％的碳酸锶和重量百分比为2％的氧化镓，然后利用分散机或三辊机等已知的混合机讲各个物料混合均匀，然后进行干燥处理3.5h，然后将干燥处理的原料转至坩埚内，再将盛装有原料的坩埚放置到加热腔室中先升温至950℃，然后保温1.5h，然后将熔炼完成的料液经冷却辊，得到铋-硼-锌-钒体系玻璃粉，然后将铋-硼-锌-钒体系玻璃粉进行破碎、筛分得到中值粒径D 50为2.5μm，玻璃化转变温度为350℃的铋-硼-锌-钒体系玻璃粉。
中间体-玻璃浆的制备：以所述线性中间层-玻璃浆的质量为100％，称取重量百分比为40％的铋-硼-锌-钒体系玻璃粉、重量百分比为12％的乙基纤维素、重量百分比为21％的松油醇、重量百分比为21％的醇酯十二、重量百分比为3％的不饱脂肪酸和重量百分比为3％的改性氢化蓖麻油，将上述称取的物料混合均匀后，再研磨分散，得到中间体-玻璃浆。
2.与线性中间层-玻璃浆配合使用的银浆的制备
铅-硼-锌-钡系玻璃粉的制备：以铅-硼-锌-钡系玻璃粉的重量为100％，称取 重量百分比为55％的氧化铅、重量百分比为20％的氧化硼、重量百分比为20％的氧化锌和重量百分比为5％的氧化钡，然后利用分散机或三辊机等已知的混合机讲各个物料混合均匀，然后进行干燥处理3.5h，然后将干燥处理的原料转至坩埚内，再将盛装有原料的坩埚放置到加热腔室中先升温至950℃，然后保温1.5h，然后将熔炼完成的料液经冷却辊，得到铅-硼-锌-钡系玻璃粉，然后将铅-硼-锌-钡系玻璃粉进行破碎、筛分得到中值粒径D 50为0.8μm，玻璃化转变温度为400℃的铅-硼-锌-钡系玻璃粉。
银浆的制备：以背面银银电极的重量为100％，称取重量百分比为70％的片状银粉、重量百分比为12.5％的铅-硼-锌-钡系玻璃粉(银浆中的玻璃与中间层的玻璃不是同一类)和17.5％的有机载体，其中片状银粉的中值粒径D 50为5.5μm，重量百分比为5％-10％的玻璃粉和20％-25％的有机载体，将上述称取的物料混合均匀后，再研磨分散，得到与线性中间层-玻璃浆配合使用的银浆。
3.P型晶体硅的背面电极的制备
一种P型晶体硅背面电极的制备方法，具体步骤如下：
利用上述制备得到的低温烧结型背面银浆进行背面电极金属化，首先在P型晶体硅的正反面上，用酸或者碱进行双面制绒；
然后在P型晶体硅正面在形成氮化硅减反射的钝化膜；
然后在P型晶体硅背面镀背面钝化层，利用SiN x或Al 2O 3在电池背面形成钝化层，作为背反射器，增加长波光的吸收，同时将P-N极间的电势差最大化，降低电子复合，从而提升电池转化效率；
然后在背面度化层上开槽，在金属化之前对背面钝化膜进行特定图形的激光开膜，以去除局部的钝化层，这种局部点接触的方式可以降低电极接触面积、减小电极复合；
然后分别对P型晶体硅的正面和反面进行金属化，其技术点在于：所述P型晶体硅的背面金属的方法包括：
在P型晶体硅上进行双面制绒，在P型晶体硅正面镀膜，在P型晶体硅背面镀背面钝化层，在背面度化层上开槽，然后分别对制备P型晶体硅的正面和背面电极，所示P型晶体硅的背面电极的制备方法如下：
(1)在所述背面钝化层上印刷全铝浆并烘干，然后在所述P型晶体硅背面钝化层上印刷全铝浆于200℃烘干3min，在所述全铝浆上印刷线性中间层-玻璃浆，于200℃烘干3min，所述线性中间层-玻璃浆的线宽为1mm，线高为15μm，相邻所述两个线性中间层-玻璃浆为22mm；
(2)在步骤(1)所述线性中间层-玻璃浆叠印背面银电极，然后于200℃烧结1.5s，所述银电极线宽为1mm，线高为5.5μm，相邻所述两个银电极的距离为22mm，即得P型晶体硅的背面电极。
实施例2
1.线性中间层-玻璃浆的制备
铋-硼-锌-钒体系玻璃粉的制备：以铋-硼-锌-钒体系玻璃粉的重量为100％，称取重量百分比为40％的氧化铋、重量百分比为15％的氧化硼、重量百分比为15％的氧化锌、重量百分比为24％的氧化钒和重量百分比为6％的碳酸锶，然后利用分散机或三辊机等已知的混合机讲各个物料混合均匀，然后进行干燥处理4h，然后将干燥处理的原料转至坩埚内，再将盛装有原料的坩埚放置到加热腔室中先升温至1050℃，然后保温2h，然后将熔炼完成的料液经冷却辊，得到铋-硼-锌-钒体系玻璃粉，然后将铋-硼-锌-钒体系玻璃粉进行破碎、筛分得到中值粒径D 50为2μm，玻璃化转变温度为300℃的铋-硼-锌-钒体系玻璃粉。
中间体-玻璃浆的制备：以所述线性中间层-玻璃浆的质量为100％，称取重 量百分比为30％的铋-硼-锌-钒体系玻璃粉、重量百分比为7％的醋酸丁基纤维素、重量百分比为28％的丁基卡必醇、重量百分比为28％的丁基卡必醇乙酸酯、重量百分比为4％的聚酰胺蜡和重量百分比为3％的改性氢化蓖麻油，将上述称取的物料混合均匀后，再研磨分散，得到中间体-玻璃浆。
2.与线性中间层-玻璃浆配合使用的银浆的制备
铅-硼-锌-钡系玻璃粉的制备：以铅-硼-锌-钡系玻璃粉的重量为100％，称取重量百分比为60％的氧化铅、重量百分比为15％的氧化硼、重量百分比为15％的氧化锌和重量百分比为10％的氧化钡，然后利用分散机或三辊机等已知的混合机讲各个物料混合均匀，然后进行干燥处理3h，然后将干燥处理的原料转至坩埚内，再将盛装有原料的坩埚放置到加热腔室中先升温至1050℃，然后保温1h，然后将熔炼完成的料液经冷却辊，得到铅-硼-锌-钡系玻璃粉，然后将铅-硼-锌-钡系玻璃粉进行破碎、筛分得到中值粒径D 50为1μm，玻璃化转变温度为350℃的铅-硼-锌-钡系玻璃粉。
银浆的制备：以背面银银电极的重量为100％，称取重量百分比为80％的片状银粉、重量百分比为15％的铅-硼-锌-钡系玻璃粉和5％的有机载体，其中片状银粉的中值粒径D 50为5μm，将上述称取的物料混合均匀后，再研磨分散，得到与线性中间层-玻璃浆配合使用的银浆。
3.P型晶体硅的背面电极的制备
一种P型晶体硅背面电极的制备方法，具体步骤如下：
利用上述制备得到的低温烧结型背面银浆进行背面电极金属化，首先在P型晶体硅的正反面上，用酸或者碱进行双面制绒；
然后在P型晶体硅正面在形成氮化硅减反射的钝化膜；
然后在P型晶体硅背面镀背面钝化层，利用SiN x或Al 2O 3在电池背面形成 钝化层，作为背反射器，增加长波光的吸收，同时将P-N极间的电势差最大化，降低电子复合，从而提升电池转化效率；
然后在背面度化层上开槽，在金属化之前对背面钝化膜进行特定图形的激光开膜，以去除局部的钝化层，这种局部点接触的方式可以降低电极接触面积、减小电极复合；
然后分别对P型晶体硅的正面和反面进行金属化，其技术点在于：所述P型晶体硅的背面金属的方法包括：
包括在P型晶体硅上进行双面制绒，在P型晶体硅正面镀膜，在P型晶体硅背面镀背面钝化层，在背面度化层上开槽，然后分别对制备P型晶体硅的正面和背面电极，所示P型晶体硅的背面电极的制备方法如下：
(1)在所述背面钝化层上印刷全铝浆并烘干，然后在所述P型晶体硅背面钝化层上印刷全铝浆于150℃烘干3.5min，在所述全铝浆上印刷线性中间层-玻璃浆，于150℃烘干3.5min，所述线性中间层-玻璃浆的线宽为0.6mm，线高为2μm，相邻所述两个线性中间层-玻璃浆为13mm；
(2)在步骤(1)所述线性中间层-玻璃浆叠印背面银电极，然后于150℃烘干2min，所述银电极线宽为0.6mm，线高为3μm，相邻所述两个银电极的距离为13mm，即得P型晶体硅的背面电极。
实施例3
1.线性中间层-玻璃浆的制备
铋-硼-锌-钒体系玻璃粉的制备：以铋-硼-锌-钒体系玻璃粉的重量为100％，称取重量百分比为10％的氧化铋、重量百分比为25％的氧化硼、重量百分比为21％的氧化锌、重量百分比为32％的氧化钒、重量百分比为8％的碳酸锶和重量百分比为4％的氧化镓，然后利用分散机或三辊机等已知的混合机讲各个物料混 合均匀，然后进行干燥处理4h，然后将干燥处理的原料转至坩埚内，再将盛装有原料的坩埚放置到加热腔室中先升温至850℃，然后保温2h，然后将熔炼完成的料液经冷却辊，得到铋-硼-锌-钒体系玻璃粉，然后将铋-硼-锌-钒体系玻璃粉进行破碎、筛分得到中值粒径D 50为3μm，玻璃化转变温度为400℃的铋-硼-锌-钒体系玻璃粉。
中间体-玻璃浆的制备：以所述线性中间层-玻璃浆的质量为100％，称取重量百分比为50％的铋-硼-锌-钒体系玻璃粉、重量百分比为7％的乙基纤维素、重量百分比为8％的醋酸丁基纤维素、重量百分比为15％的甘油、重量百分比为15％的醇酯十二、重量百分比为2％的聚酰胺蜡和重量百分比为3％的丁基卡必醇乙酸酯，将上述称取的物料混合均匀后，再研磨分散，得到中间体-玻璃浆。
2.与线性中间层-玻璃浆配合使用的银浆的制备
铅-硼-锌-钡系玻璃粉的制备：以铅-硼-锌-钡系玻璃粉的重量为100％，称取重量百分比为60％的氧化铅、重量百分比为20％的氧化硼、重量百分比为15％的氧化锌和重量百分比为5％的氧化钡，然后利用分散机或三辊机等已知的混合机讲各个物料混合均匀，然后进行干燥处理3h，然后将干燥处理的原料转至坩埚内，再将盛装有原料的坩埚放置到加热腔室中先升温至1050℃，然后保温1h，然后将熔炼完成的料液经冷却辊，得到铅-硼-锌-钡系玻璃粉，然后将铅-硼-锌-钡系玻璃粉进行破碎、筛分得到中值粒径D 50为0.5μm，玻璃化转变温度为350℃的铅-硼-锌-钡系玻璃粉。
银浆的制备：以背面银银电极的重量为100％，称取重量百分比为80％的片状银粉、重量百分比为10％的铅-硼-锌-钡系玻璃粉和10％的有机载体，其中片状银粉的中值粒径D 50为6μm，将上述称取的物料混合均匀后，再研磨分散，得到与线性中间层-玻璃浆配合使用的银浆。
3.P型晶体硅的背面电极的制备
一种P型晶体硅背面电极的制备方法，具体步骤如下：
利用上述制备得到的低温烧结型背面银浆进行背面电极金属化，首先在P型晶体硅的正反面上，用酸或者碱进行双面制绒；
然后在P型晶体硅正面在形成氮化硅减反射的钝化膜；
然后在P型晶体硅背面镀背面钝化层，利用SiN x或Al 2O 3在电池背面形成钝化层，作为背反射器，增加长波光的吸收，同时将P-N极间的电势差最大化，降低电子复合，从而提升电池转化效率；
然后在背面度化层上开槽，在金属化之前对背面钝化膜进行特定图形的激光开膜，以去除局部的钝化层，这种局部点接触的方式可以降低电极接触面积、减小电极复合；
然后分别对P型晶体硅的正面和反面进行金属化，其技术点在于：所述P型晶体硅的背面金属的方法包括：
包括在P型晶体硅上进行双面制绒，在P型晶体硅正面镀膜，在P型晶体硅背面镀背面钝化层，在背面度化层上开槽，然后分别对制备P型晶体硅的正面和背面电极，所示P型晶体硅的背面电极的制备方法如下：
(1)在所述背面钝化层上印刷全铝浆并烘干，然后在所述P型晶体硅背面钝化层上印刷全铝浆于250℃烘干2.5min，在所述全铝浆上印刷线性中间层-玻璃浆，于250℃烘干2.5min，所述线性中间层-玻璃浆的线宽为2mm，线高为5μm，相邻所述两个线性中间层-玻璃浆为30.4mm；
(2)在步骤(1)所述线性中间层-玻璃浆叠印背面银电极，然后于于250℃烘干2min，所述银电极线宽为2mm，线高为5μm，相邻所述两个银电极的距离为30.4mm，即得P型晶体硅的背面电极。
对比例1
阻隔层浆料的制备：阻隔层浆料按照重量份数包括如下：粒径D 50为0.1μm的ZrN和TiN、粒径D 50为0.3μm的BN x和VN x、粒径D 50为0.3μm的Al 2O 3和SiO 2共67份，D 50为0.7μm，软化点为500℃的无铅玻璃粉3份，有机粘结剂29.8份，有机助剂0.2份。按照比例将预先分散好的金属氮化物及氧化物粉体，有机粘结剂、无机粘结剂、有机助剂，按一定比例分散混合后，使用三辊研磨机研磨6遍，使之分散均匀，至细度<15μm，即为制备的阻隔层浆料。
与阻隔层浆料搭配使用扥背银浆料的制备：该背银浆料按照重量份数包括如下：纯度大于99.99％的特殊要求的空心球形银粉42份，片状银粉15份，无铅玻璃粉2.5份，有机粘结剂40.1份，有机助剂0.4份；其中，所述的空心球形银粉粒径D50为1μm，片状银粉粒径D50为6μm，将银粉，有机粘结剂、无机粘结剂、有机助剂，按一定比例分散混合后，使用三辊研磨机研磨6遍，使之分散均匀，至细度<15μm，即为制备的搭配使用的背银浆料。
太阳能电池背面电极的制备方法：在背面铝浆上印刷或喷涂一层导电阻隔层浆料，阻隔层浆料直接印刷在背铝电极上，烘干后，在其上印刷搭配使用的背银浆料，经过烘干，烧结后形成背电极。
本发明的性能检测分析如下：
取实施例1～3的方法和对比例1方法的制备的得到的电池片，烧结后测试其电性数据如表1所示。
表1电性数据表
Figure PCTCN2019095752-appb-000001
Figure PCTCN2019095752-appb-000002
从表1可知，采用本发明的方法可以在不破坏钝化层的同时，还可以保持与银铝接触良好，也不影响导电性，本发明可以形成完整的全铝背场提高了电极区域的场钝化特性，减少载流子符合，没有银进入硅基体，不会产生漏电，降低电池漏电流，提高光电转换效率。
本发明不局限于上述最佳实施方式，任何人在本发明的启示下都可得出其他各种形式的产品，但不论在其形状或结构上作任何变化，凡是具有与本申请相同或相近似的技术方案，均落在本发明的保护范围之内。

Claims (10)

  1. 一种P型晶体硅背面电极的制备方法，其特征在于：包括在P型晶体硅上进行双面制绒，在P型晶体硅正面镀膜，在P型晶体硅背面镀背面钝化层，在背面钝化层上开槽，然后分别对制备P型晶体硅的正面和背面电极；
    其中，所述的背面电极的制备方法如下：
    (1)在所述背面钝化层上印刷全铝浆并烘干，然后在所述P型晶体硅背面钝化层上印刷全铝浆于150～250℃烘干2.5～3.5min，在背极位置处先印刷一层线性中间层-玻璃浆，于150～250℃烘干2.5～3.5min，所述线性中间层-玻璃浆的宽为0.6～2mm，高为2～5μm，相邻所述两个线性中间层-玻璃浆为13～30.4mm；
    (2)在步骤(1)所述线性中间层-玻璃浆叠印背面银电极，然后于150～250℃烘干1～2min，宽为0.6～2mm，高为3～8μm，相邻所述两个背电极13～30.4mm，即得P型晶体硅的背面电极。
  2. 根据权利要求1所述的P型晶体硅的背面电极的制备方法，其特征在于：所述的步骤(1)中的线性中间层-玻璃浆由铋-硼-锌-钒体系玻璃粉和有机载体混合制得，以所述线性中间层-玻璃浆的重量为100％，所述铋-硼-锌-钒体系玻璃粉的重量为30～50％，所述有机载体的重量为50～70％。
  3. 根据权利要求2所述的P型晶体硅的背面电极的制备方法，其特征在于：以所述的铋-硼-锌-钒体系玻璃粉的重量为100％，所述的铋-硼-锌-钒体系玻璃粉由重量百分比为10～40％的氧化铋、重量百分比为5～25％的氧化硼、重量百分比为5～25％的氧化锌、重量百分比为10～35％的氧化钒、重量百分比为4～8％的碳酸锶和重量百分比为0～4％的氧化镓熔融制备而成。
  4. 根据权利要求2或者3所述的P型晶体硅的背面电极的制备方法，其特征在于：所述的铋-硼-锌-钒体系玻璃粉的玻璃化转变温度为300～400℃，所述的铋-硼-锌-钒体系玻璃粉的中值粒径D 50为2～3μm。
  5. 根据权利要求2所述的P型晶体硅的背面电极的制备方法，其特征在于：所述的有机载体包括有机树脂、有机溶剂和有机助剂，以所述的有机载体为100％，所述的有机树脂的重量分数为10～30％，所述的有机溶剂的重量分数为60％～80％，所述的有机助剂的重量分数为5～15％。
  6. 根据权利要求5所述的P型晶体硅的背面电极的制备方法，其特征在于：所述的有机树脂选自乙基纤维素、醋酸丁基纤维素中的至少一种。
  7. 根据权利要求5所述的P型晶体硅的背面电极的制备方法，其特征在于：所述的有机溶剂选自松油醇、醇酯十二、丁基卡必醇、丁基卡必醇乙酸酯、甘油中的一种或几种。
  8. 根据权利要求5所述的P型晶体硅的背面电极的制备方法，其特征在于：所述的有机助剂选自硬脂酸及硬脂酸衍生物、不饱脂肪酸、改性氢化蓖麻油、聚酰胺蜡中的至少一种。
  9. 根据权利要求1所示的P型晶体硅的背面电极的制备方法，其特征在于：所述的步骤(2)中的背面银电极由片状银粉、铅-硼-锌-钡系玻璃粉和有机载体混合后研磨分散制备得到，以所述的背面银电极的重量为100％，所述的片状银粉的重量百分比为60～80％，所述的铅-硼-锌-钡系玻璃粉的重量百分比为10～15％，所述的有机载体的重量百分比为5～20％，所述的片状银粉的中值粒径D 50为5～6μm，所述的铅-硼-锌-钡系玻璃粉的璃化转变温度为350～450℃，所述的铅-硼-锌-钡系玻璃粉的中值粒径D 50为0.5～1μm。
  10. 根据权利要求9所示的P型晶体硅的背面电极的制备方法，其特征在于：以所述的铅-硼-锌-钡系玻璃粉的重量为100％，所述的铅-硼-锌-钡系玻璃粉由重量百分比为50～60％的氧化铅、重量百分比为10～30％的氧化硼、重量百分比为5～20％的氧化锌和重量百分比为1～10％的氧化钡熔融制备而成。
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