CN112635617A - 一种perc电池制备方法 - Google Patents
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Abstract
本发明属于光伏技术领域，具体为一种PERC电池制备方法，主要用于提高PERC电池的效率。本发明包括：先后进行的扩散步骤、刻蚀步骤、背膜步骤，刻蚀步骤中采用刻蚀溶液，刻蚀溶液的化学成分包括HNO3、HF、H2SO4、H2O；背膜步骤中采用SiH4和NH3对硅片背面进行镀膜沉积，所述镀膜沉积次数为两次。本发明与现有技术相比，增加了硅片基底的折射率，提高了PERC电池对光的吸收率，提高了PERC电池的效率。
Description
技术领域
本发明属于光伏技术领域，具体为一种PERC电池制备方法，主要用于提高PERC电池的效率。
背景技术
随着科技的进步以及环保意识的增强，PERC电池迎合了环保节能的需求，成为新能源研发中重要的一部分。申请号为202010213511.7的一种高效单晶硅PERC太阳能电池的制备方法，包括制绒——扩散——刻蚀——退火——正面印刷掩膜材料并固化——正面沉积SINx减反膜——去除掩膜材料——背面沉积SiNx/AlOx钝化膜——背面激光——印刷背电极和背电场——TCO沉积——印刷正电极并低温固化。使用HF/HNO3溶液对扩散后的硅片进行背面抛光和去PSG，刻蚀减重控制在0.2g-0.35g，反射率控制在20%-30%； 制备Al2O3/SiNx钝化膜时，钝化膜的厚度控制在80-150nm，在刻蚀与沉积钝化膜后，钝化膜的钝化效率不是很好，导致PERC电池的效率不高，因此，本申请针对上述在刻蚀与沉积钝化膜的过程导致PERC电池效率较低的问题进行研究。
发明内容
本发明的目的在于提供一种PERC电池制备方法，主要用于提高PERC电池的效率。
本申请为了解决上述技术问题，提供了一种PERC电池制备方法，包括先后进行的扩散步骤、刻蚀步骤、背膜步骤，所述刻蚀步骤中采用刻蚀溶液，所述刻蚀溶液的化学成分包括HNO3、HF、H2SO4、H2O；所述背膜步骤中采用SiH4和NH3对硅片背面进行镀膜沉积，所述镀膜沉积次数为两次。
作为优选，所述HNO3、HF、H2SO4、H2O的浓度分别为28-30%、6-8%、6-9%、53-55%。
作为优选，所述第一次镀膜沉积时NH3和SiH4的气体流量比为6:1；所述第二次镀膜沉积时NH3和SiH4的气体流量比为10:1。
作为优选，所述第一次镀膜沉积的时间为180s；所述第二次镀膜沉积的时间为790s。
作为优选，所述镀膜沉积的温度为490-580℃。
作为优选，所述对硅片背面进行镀膜沉积前充入NH3。
作为优选，所述扩散步骤包括通源操作：通入N2带出POCl3；所述通源操作包括前期通源和后期通源；所述前期通源中通入N2的量为625sccm；所述后期通源中通入N2的量为2500sccm。
作为优选，所述前期通源和后期通源之间包括推进磷源操作，所述推进磷源操作的温度为845-858℃。
作为优选，所述通源操作前还包括稳定气场操作，所述稳定气场操作时长120s。
本实用新型还提供了一种PERC电池，经上述制备方法制备而成。
本发明具有如下技术效果：
1.在刻蚀溶液中加入H2SO4，相较于只用到HF和HNO3而言，H2SO4能增大硅片表面的张力，增加了背面的抛光效果，有利于提高反射率，减少背面对光能的吸收，增大PERC电池对太阳光的利用率。
2.两次镀膜沉积提高了硅片表面的均匀性，减小了色差，有利于提高背面光的反射。
3.通过通入相应的NH3和SiH4在硅片背面形成Si3N4薄膜，NH3和SiH4的气体流量在第一次镀膜沉积时与第二次镀膜沉积时的比例为6:1和10:1，形成硅片基底高折射率、上层低折射率的混合膜结构，上层低折射率有助于光的吸收，基底高折射率有助于钝化效果，减少在基底处光的散失。
4.第一次镀膜沉积时间180s,而第二次镀膜沉积时间790s，使得基底的膜层厚度较厚，有利于提高钝化效果。
5.镀膜沉积温度490-580℃，有利于力高钝化效果。
6.对硅片背面进行镀膜沉积前充入NH3，吹扫硅片表面，减少表面污染，增加镀膜沉积时表面的光滑度，提升钝化效果。
7.前期通源量较小，推进温度较低，有利于降低PN结深，提高扩散方阻。
8.在通源操作前进行稳定气场操作，有助于提高方阻的均匀性。
9.后期通源量较大，增加了表面浓度，从而减少了表面接触电阻，进一步提高了PERC电池的效率。
附图说明
图1 扩散工艺流程图。
图2 优化前后刻蚀效果对比图
图3 优化前后背膜效果对比图。
具体实施方式
这里使用的术语仅用于描述特定实施例的目的，而不意图限制本发明。 除非另外定义，否则本文使用的所有术语具有与本发明所属领域的普通技术人员通常理解的相同的含义。 将进一步理解的是，常用术语应该被解释为具有与其在相关领域和本公开内容中的含义一致的含义。本公开将被认为是本发明的示例，并且不旨在将本发明限制到特定实施例。
本实施例提供了一种PERC电池制备方法，主要用于提高PERC电池的效率。该方法包括：先后进行的扩散步骤、刻蚀步骤、背膜步骤，刻蚀步骤中采用刻蚀溶液，刻蚀溶液的化学成分包括HNO3、HF、H2SO4、H2O；背膜步骤中采用SiH4和NH3对硅片背面进行镀膜沉积，镀膜沉积次数为两次。
PERC电池主要经过制绒、扩散、刻蚀、退火、背面沉积钝化膜、正面沉积减反膜、背面激光、丝网印刷、烘干烧结几个步骤制成，经扩散步骤形成PN结的过程中，PN结相当于PERC电池的心脏，制备过程直接影响电池的性能，影响光电转换效率。除此之外，刻蚀包括干法刻蚀和湿法刻蚀，本实施例中，刻蚀步骤利用刻蚀溶液对扩散后硅片表面和边缘进行腐蚀，刻蚀步骤溶液的成分及浓度也对太阳能电池的效率有一定的影响，一般的刻蚀步骤是利用HNO3和HF的混合液体进行刻蚀，而本实施例中在刻蚀溶液中加入了H2SO4进行刻蚀，H2SO4的密度和张力都较大，H2SO4能增加硅片表面的张力，增加背面的抛光效果，有助于刻蚀溶液对硅片背面有进行持续抛光，有助于提高硅片表面的反射率，而在背膜的过程中，通过镀两层膜，形成较好的折射和减反结构，光电转换效率较高。与ITO薄膜相互配合，增加入射光、减小射入的光在背面的削弱、增加对光的吸收，从多个方面提高了光电转换效率，进而极大地提升了PERC电池的性能。
其中，刻蚀步骤在湿法刻蚀机内进行，含有刻蚀槽，刻蚀槽的下方设有储液罐，刻蚀槽与储液罐间设有回流管道，刻蚀槽内均匀分布有多更滚轮，硅片在滚轮上通过刻蚀槽，通过时背面接触刻蚀溶液，实现刻蚀。刻蚀溶液中，HNO3、HF、H2SO4、H2O的浓度分别为28-30%、6-8%、6-9%、53-55%。通过加入H2SO4来增加硅片表面的张力，提高硅片表面的抛光效果，而因加入H2SO4，为了避免腐蚀性过强，HNO3的浓度与H2SO4的浓度相应的减小。刻蚀时将H2SO4通过耐H2SO4管路泵打入储液罐，实现均匀补加，而不是直接加入刻蚀槽，若直接加入刻蚀槽，有造成刻蚀液不均匀、局部反应的不正常的异常现象，造成刻蚀失败，以及材料的浪费。刻蚀槽内的滚轮采用深齿滚轮，深齿滚轮对液面的搅动小，循环流量大，有利于避免尾部抛光差的现象，经上述刻蚀后硅片背面效果与原始工艺中刻蚀后效果对比图如图2所示，经刻蚀步骤后提高了硅片表面的抛光效果，使得背膜步骤时在抛光效果更好的硅片背膜所形成的的薄膜反射效果得到提升。在背膜步骤中，采用两层膜的结构，相较三层膜的结构，两层膜结构的均匀性更好，色差也较均匀，光的吸收率更好。本实施例中，第一次镀膜沉积时NH3和SiH4的气体流量比为6:1；第二次镀膜沉积时NH3和SiH4的气体流量比为10:1。其中，第一次镀膜沉积时NH3的流量为4800sccm，SiH4的流量为800sccm，在硅片背面沉积第一层Si3N4钝化膜，第二次镀膜沉积时NH3的流量为8000sccm，SiH4的流量为800sccm，在第一层Si3N4钝化膜上沉积第二层Si3N4钝化膜，第而次冲入的NH3较第一次多，形成的NH3和SiH4的气体流量比也较大，便于形成硅片基底的第二层钝化膜高折射率，而上层第一层钝化膜低折射率的混合膜层结构，基底高折射率有助于钝化效果，使得PERC电池中对光的利用率更好，上层低折射率有助于光的吸收，有利于提高光电转换效率。除此之外，第一次镀膜沉积的时间为180s；第二次镀膜沉积的时间为790s。镀膜沉积的温度为490-580℃。在相同的温度条件下，沉积时间越长，钝化膜的厚度越厚，为了适应于上述形成硅片基底高折射率、上层低折射率的效果，使得在硅片基底处光能被更多地折射进PERC电池，减少光的削弱，而同时上层的第一层钝化膜尽可能多的吸收光，使得PERC电池的性能得到进一步的提升。本实施例中，在镀膜沉积前经恒温处理，恒温处理使得镀膜管各区域的温度均衡，在恒温处理时，对硅片背面进行镀膜沉积前充入NH3。用以吹扫硅片表面，减少表面污染，同时NH3也是镀膜时需用到的气体，不会对镀膜沉积造成影响。在第一次镀膜沉积和第二次镀膜沉积前均进行恒压处理，保证每次镀膜沉积都是按照所设定的SiH4、NH3比例沉积。经刻蚀操作后，背膜操作进一步加工，使得硅片的背面氮化硅的钝化效果更好，如图3所示，原始工艺背膜后与本实施例中背膜后效果对比，原始工艺中背膜后颜色偏蓝，优化后颜色为金黄色，对比来看，本实施例中制造工艺所得到的效果更好。
本实施例中，如图1，扩散步骤包括通源操作：通入N2带出POCl3；通源操作包括前期通源和后期通源；前期通源中通入N2的量为625sccm；后期通源中通入N2的量为2500sccm。扩散步骤在形成PN的过程中，扩散方阻是最重要的监控指标，主要看方阻的阻值和方阻的均匀性。前期通源和后期通源之间包括推进磷源操作，推进磷源操作的温度为845-858℃。前期通源中通入N2的量较少，而相对较低的温度使得PN结的深度降低，提高扩散方阻，减少掺杂浓度，提高电池效率，当方阻达到一定值时，对电池的效率达到饱和，本实施例中，方阻提高的饱和值为145欧姆，因此，根据实验，本实施例中设温度为845-858℃，由于在接近扩散炉炉口的位置温度易受影响而偏低，因此，设定路口的温度较扩散炉中间部分的温度高一点，而同样经实验设定前期通源中通入N2的量为625sccm，保证PERC电池的效率得到最大的提升，而相应的为了稳定方阻的均匀性，通源操作前还包括稳定气场操作，所述稳定气场操作时长120s。稳定气场操作在将扩散炉内抽真空后进行，由于空气中有大气压，扩散炉内无法做到完全真空，扩散炉内依旧会保留少量的气体，而抽真空后的扩散炉内的气体比较紊乱，影响在扩散时的均匀性，因此，在抽真空后且在通源操作前加入稳定气场操作，通过120s的稳定气场，缓和扩散炉内气体的紊乱，提高后续扩散的均匀性，进而提高PERC电池的效率。除外，在增大方阻、稳定方阻均匀性的同时，在后期通源中通入较多的N2，增加硅片表面浓度，从而减少表面接触电阻，进一步提高效率，为了保证电池效率得到最大的提升，本实施例中后期通入N2的量为2500sccm。
本实施例还提供了一种PERC电池，根据上述制备方法制备而成，提高了对太阳光的吸收与利用，提升了PERC电池的性能。
虽然描述了本发明的实施方式，但是本领域普通技术人员可以在所附权利要求的范围内做出各种变形或修改。
Claims (10)
1.一种PERC电池制备方法，包括先后进行的扩散步骤、刻蚀步骤、背膜步骤，其特征在于：
所述刻蚀步骤中采用刻蚀溶液，所述刻蚀溶液的化学成分包括HNO3、HF、H2SO4、H2O；
所述背膜步骤中采用SiH4和NH3对硅片背面进行镀膜沉积，所述镀膜沉积次数为两次。
2.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述HNO3、HF、H2SO4、H2O的浓度分别为28-30%、6-8%、6-9%、53-55%。
3.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述第一次镀膜沉积时NH3和SiH4的气体流量比为6:1；
所述第二次镀膜沉积时NH3和SiH4的气体流量比为10:1。
4.根据权利要求书3所述的一种PERC电池制备方法，其特征在于：
所述第一次镀膜沉积的时间为180s；
所述第二次镀膜沉积的时间为790s。
5.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述镀膜沉积的温度为490-580℃。
6.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述对硅片背面进行镀膜沉积前充入NH3。
7.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述扩散步骤包括通源操作：通入N2带出POCl3；
所述通源操作包括前期通源和后期通源；
所述前期通源中通入N2的量为625sccm；
所述后期通源中通入N2的量为2500sccm。
8.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述前期通源和后期通源之间包括推进磷源操作，所述推进磷源操作的温度为845-858℃。
9.根据权利要求书1所述的一种PERC电池制备方法，其特征在于：
所述通源操作前还包括稳定气场操作，所述稳定气场操作时长120s。
10.一种PERC电池，根据权利要求书1-9中任一项所述的一种PERC电池制备方法制备而成。
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| CN108183149A (zh) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | 一种太阳能电池片的生产方法 |
| CN108922941A (zh) * | 2018-05-30 | 2018-11-30 | 韩华新能源（启东）有限公司 | 一种太阳能perc电池的制备方法 |
| CN109994553A (zh) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | 一种三层介电钝化膜perc太阳电池及制作工艺 |
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| CN108922941A (zh) * | 2018-05-30 | 2018-11-30 | 韩华新能源（启东）有限公司 | 一种太阳能perc电池的制备方法 |
| CN109994553A (zh) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | 一种三层介电钝化膜perc太阳电池及制作工艺 |
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