ZA202211795B - Perc cell preparation method - Google Patents

Perc cell preparation method

Info

Publication number
ZA202211795B
ZA202211795B ZA2022/11795A ZA202211795A ZA202211795B ZA 202211795 B ZA202211795 B ZA 202211795B ZA 2022/11795 A ZA2022/11795 A ZA 2022/11795A ZA 202211795 A ZA202211795 A ZA 202211795A ZA 202211795 B ZA202211795 B ZA 202211795B
Authority
ZA
South Africa
Prior art keywords
perc
present
cell preparation
etching
efficiency
Prior art date
Application number
ZA2022/11795A
Inventor
Yifeng He
Wenhui Lv
Xiaoyong Qiu
Wensheng Yan
Xinyu Tan
Qingguo Zhao
Xingzhu Wang
Original Assignee
Zhejiang Beyondsu Pv Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Beyondsu Pv Co Ltd filed Critical Zhejiang Beyondsu Pv Co Ltd
Publication of ZA202211795B publication Critical patent/ZA202211795B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to the technical field of photovoltaics, and relates in particular to a PERC cell preparation method mainly used to improve the efficiency of PERC cells. The present invention comprises a diffusion step, an etching step, and a back film processing step carried out in sequence. In the etching step, an etching solution is used, and the chemical composition of the etching solution comprises HNO3, HF, H2SO4, and H2O. In the back film processing step, SiH4 and NH3 are used to perform coating deposition on the rear side of a silicon wafer, and the coating deposition is performed twice. Compared with the prior art, the present invention improves the refractive index of substrates of silicon wafers, and improves the light absorption rate of PERC cells, thereby improving the efficiency of PERC cells.
ZA2022/11795A 2020-11-27 2022-10-28 Perc cell preparation method ZA202211795B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011361940.5A CN112635617A (en) 2020-11-27 2020-11-27 Preparation method of PERC battery
PCT/CN2021/086886 WO2022110613A1 (en) 2020-11-27 2021-04-13 Perc cell preparation method

Publications (1)

Publication Number Publication Date
ZA202211795B true ZA202211795B (en) 2024-02-28

Family

ID=75306538

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2022/11795A ZA202211795B (en) 2020-11-27 2022-10-28 Perc cell preparation method

Country Status (3)

Country Link
CN (1) CN112635617A (en)
WO (1) WO2022110613A1 (en)
ZA (1) ZA202211795B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112635617A (en) * 2020-11-27 2021-04-09 浙江贝盛光伏股份有限公司 Preparation method of PERC battery
CN114571086B (en) * 2021-12-31 2023-06-20 华侨大学 Nanosecond laser-induced plasma composite femtosecond laser processing device and processing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731960A (en) * 2017-10-16 2018-02-23 常州亿晶光电科技有限公司 The preparation method of PERC cell backside silicon nitride multilayer films
CN108183149A (en) * 2017-12-27 2018-06-19 安徽银欣新能源科技有限公司 A kind of production method of solar battery sheet
CN108922941A (en) * 2018-05-30 2018-11-30 韩华新能源（启东）有限公司 A kind of preparation method of solar PE RC battery
CN109994553A (en) * 2019-04-30 2019-07-09 通威太阳能（成都）有限公司 Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft
CN111029414B (en) * 2019-12-25 2021-05-28 横店集团东磁股份有限公司 Multilayer SiN prepared by solar single crystal PERCxBack film process method
CN111403551A (en) * 2020-03-24 2020-07-10 浙江爱旭太阳能科技有限公司 Preparation method of high-efficiency monocrystalline silicon PERC solar cell
CN111416002A (en) * 2020-04-24 2020-07-14 通威太阳能（安徽）有限公司 Silicon nitride film layer on back of battery, PERC battery and preparation method
CN111987191A (en) * 2020-09-09 2020-11-24 苏州腾晖光伏技术有限公司 Method for repairing PERC battery laser membrane opening damage
CN112635617A (en) * 2020-11-27 2021-04-09 浙江贝盛光伏股份有限公司 Preparation method of PERC battery

Also Published As

Publication number Publication date
WO2022110613A1 (en) 2022-06-02
CN112635617A (en) 2021-04-09

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