CN110767757B - 一种高效perc电池背面氧化铝膜及其制备方法 - Google Patents
一种高效perc电池背面氧化铝膜及其制备方法 Download PDFInfo
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- CN110767757B CN110767757B CN201910879401.1A CN201910879401A CN110767757B CN 110767757 B CN110767757 B CN 110767757B CN 201910879401 A CN201910879401 A CN 201910879401A CN 110767757 B CN110767757 B CN 110767757B
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 36
- 230000008021 deposition Effects 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims abstract description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 27
- 239000002344 surface layer Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 61
- 230000035484 reaction time Effects 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000002161 passivation Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000005669 field effect Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 51
- 230000000052 comparative effect Effects 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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CN201910879401.1A CN110767757B (zh) | 2019-09-18 | 2019-09-18 | 一种高效perc电池背面氧化铝膜及其制备方法 |
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CN113990980B (zh) * | 2020-07-09 | 2024-08-16 | 嘉兴阿特斯技术研究院有限公司 | 太阳能电池的制备方法与太阳能电池 |
CN113097342B (zh) | 2021-03-31 | 2023-06-23 | 通威太阳能(安徽)有限公司 | 一种太阳能电池、其AlOx镀膜方法、电池背钝化结构及方法 |
CN113241389A (zh) * | 2021-04-25 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | 提高光电转换效率的perc电池的制作方法和电池 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1767173A (zh) * | 2004-10-26 | 2006-05-03 | 中芯国际集成电路制造(上海)有限公司 | 氧化铝原子淀积层的新预处理方法 |
CN106169510A (zh) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | 太阳能电池背钝化膜层结构和制备方法 |
CN107256894A (zh) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | 管式perc单面太阳能电池及其制备方法和专用设备 |
CN107731935A (zh) * | 2017-09-11 | 2018-02-23 | 中节能太阳能科技(镇江)有限公司 | 一种背钝化晶硅太阳能电池及其背钝化膜层的制备方法 |
CN108091724A (zh) * | 2017-11-27 | 2018-05-29 | 浙江爱旭太阳能科技有限公司 | 一种改善perc电池背面界面态的方法及其电池 |
CN109585599A (zh) * | 2018-11-23 | 2019-04-05 | 浙江昱辉阳光能源江苏有限公司 | 一种太阳能电池背面钝化层的制备方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1767173A (zh) * | 2004-10-26 | 2006-05-03 | 中芯国际集成电路制造(上海)有限公司 | 氧化铝原子淀积层的新预处理方法 |
CN106169510A (zh) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | 太阳能电池背钝化膜层结构和制备方法 |
CN107256894A (zh) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | 管式perc单面太阳能电池及其制备方法和专用设备 |
CN107731935A (zh) * | 2017-09-11 | 2018-02-23 | 中节能太阳能科技(镇江)有限公司 | 一种背钝化晶硅太阳能电池及其背钝化膜层的制备方法 |
CN108091724A (zh) * | 2017-11-27 | 2018-05-29 | 浙江爱旭太阳能科技有限公司 | 一种改善perc电池背面界面态的方法及其电池 |
CN109585599A (zh) * | 2018-11-23 | 2019-04-05 | 浙江昱辉阳光能源江苏有限公司 | 一种太阳能电池背面钝化层的制备方法 |
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