CN110129770A - 光伏电池背钝化沉积装置 - Google Patents
光伏电池背钝化沉积装置 Download PDFInfo
- Publication number
- CN110129770A CN110129770A CN201910519405.9A CN201910519405A CN110129770A CN 110129770 A CN110129770 A CN 110129770A CN 201910519405 A CN201910519405 A CN 201910519405A CN 110129770 A CN110129770 A CN 110129770A
- Authority
- CN
- China
- Prior art keywords
- air inlet
- processing chamber
- photovoltaic cell
- back passivation
- sleeve pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 28
- 238000001556 precipitation Methods 0.000 title claims abstract description 17
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 28
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 235000013842 nitrous oxide Nutrition 0.000 claims abstract description 18
- 229910000077 silane Inorganic materials 0.000 claims abstract description 18
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 239000003708 ampul Substances 0.000 claims abstract description 10
- 230000001936 parietal effect Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- -1 silicon Alkane Chemical class 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 229910020286 SiOxNy Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 4
- 239000007888 film coating Substances 0.000 abstract description 3
- 238000009501 film coating Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明公开了一种光伏电池背钝化沉积装置，具有一个主机室，主机室内至少具有一个工艺腔室，工艺腔室一端通过炉口法兰与腔室盖紧密连接，另一端与外部的尾气处理装置连通，工艺腔室的壁层结构是保护套管及石英衬管，或者是保护套管、石英管及石英衬管，在工艺腔室的端部设置有TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口，五个进气口均通入工艺腔室。本发明通过一台设备设立多个工艺腔室，每个工艺腔室内分时段先后实现氧化铝(Al2O3)、氧化硅(SiO2)、氮氧化硅（SiOxNy）、氮化硅(Si3N4)等多层钝化膜或其中某几种薄膜的镀膜工艺，简化现有技术的多机设备或多腔室结构，降低生产成本，使操作更加便捷，提高生产效率。
Description
技术领域
本发明涉及光伏电池制造设备领域，尤其是一种光伏电池背钝化沉积装置。
背景技术
太阳能光伏电池是一种把太阳的光能直接转化为电能的新型电池。目前通常使用的是以硅为基底的硅光伏电池，包括单晶硅、多晶硅和非晶硅光伏电池。PERC电池（Passivated Emitter and Rear Cell，发射极和背面钝化技术）是一种新型的光伏电池技术，PERC电池与常规电池最大的区别在于背表面介质膜钝化，采用局域金属接触，有效降低背表面的电子复合速度，同时提升了背表面的光反射。PERC电池背表面的有效钝化是提升太阳能电池转换效率的重要因素。目前较为成熟的钝化膜材料包括氧化铝(Al2O3)、氧化硅(SiO2)、氮氧化硅（SiOxNy）、氮化硅(Si3N4)等，其中，氧化铝(Al2O3)由于具备较高的电荷密度，可以对P型表面提供良好的钝化，被广泛应用于PERC电池量产的背面钝化材料。为了提升钝化效果，多层钝化膜结构是一个重要的发展方向。
如图1所示，目前能够实现多层钝化膜的技术通常为ALD+PECVD或者改进型PECVD，ALD（Atomic Layer Deposition，原子层沉积）用于氧化铝3的原子层沉积，PECVD（PlasmaEnhanced Chemical Vapor Deposition，等离子体增强化学气相沉积）用于氮化硅1、氧化硅2等的等离子体增强化学气相沉积，使用两种设备分别进行相应的钝化膜沉积是较为常见的生产技术，利用不同设备分别镀膜成本高，制造工序复杂，生产效率低。改进型PECVD是单台设备上具有不同的腔室，不同腔室中发生不同反应，硅片4在不同的腔室中分步进行氧化铝3、氧化硅2、氮化硅1等钝化膜沉积，节省了在不同设备之间进行流转的时间，但设备结构较为复杂，体积庞大，不利于维护。
发明内容
本申请人针对上述现有多层钝化膜沉积设备存在的两台设备分别镀膜或单台设备两个腔室分步镀膜造成的设备结构复杂、成本高、体积大、操作繁琐、生产效率低等缺点，提供了一种结构合理的光伏电池背钝化沉积装置，能够通过一台设备单个工艺腔室先后实现沉积氧化铝(Al2O3)、氧化硅(SiO2)、氮氧化硅（SiOxNy）、氮化硅(Si3N4)薄膜或其中某几种薄膜的镀膜工艺，简化设备整体结构，使操作更加便捷，提高生产效率，降低生产成本。
本发明所采用的技术方案如下：
一种光伏电池背钝化沉积装置，具有一个主机室，主机室内至少具有一个工艺腔室，工艺腔室一端通过炉口法兰与腔室盖紧密连接，另一端与外部的尾气处理装置连通，工艺腔室的壁层结构是保护套管及石英衬管，或者是保护套管、石英管及石英衬管，在工艺腔室的端部设置有TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口，五个进气口均通入工艺腔室。
作为上述技术方案的进一步改进：
工艺腔室的内壁为石英衬管，在石英衬管外周沿轴向套设保护套管或者石英管及保护套管，保护套管外部为加热炉体。
保护套管为耐高温金属管。
保护套管为不锈钢钢管。
保护套管的材料为310钢材。
保护套管的一端部与炉口法兰密封连接。
TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口均集成在炉口法兰上。
TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口分布在工艺腔室的一端或两端上，或者由工艺腔室端部的气管延伸到工艺腔室的中部。
TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口分别与外部的TMA气源、笑气气源、硅烷气源、氨气气源和氮气气源对应连通并由气路控制阀控制开闭。
所述五个进气口在通入工艺腔室前自由组成合并管路，并由对应的控制阀选择性通气。
本发明的有益效果如下：
本发明通过一台设备设立多个工艺腔室，每个工艺腔室内分时段先后实现氧化铝(Al2O3)、氧化硅(SiO2)、氮氧化硅（SiOxNy）、氮化硅(Si3N4)等多层钝化膜或其中某几种薄膜的镀膜工艺，简化现有技术的多机设备或多腔室结构，降低生产成本，使操作更加便捷，提高生产效率。本发明采用的工艺腔室的壁层结构是保护套管及石英衬管，或者是保护套管、石英管及石英衬管。当设备通入TMA气体镀氧化铝膜时，保护套管可防止石英衬管或石英管发生破裂，导致有毒的TMA及尾气泄漏造成污染和危险，提高设备兼容后的安全性。本发明在炉口法兰上集成有TMA（三甲胺）进气口、笑气（N2O）进气口、硅烷（SiH4）进气口、氨气（NH3）进气口、氮气（N2）进气口等五个进气口，既便于通过各自气源的气路控制通气，又不会对工艺腔室的整体结构造成破坏性影响，降低设备的改进成本。
附图说明
图1为多层钝化膜结构的示意图。
图2为本发明的示意图。
图3为本发明主机室的示意图。
图中：1、氮化硅；2、氧化硅；3、氧化铝；4、硅片；5、工艺腔室；6、石英衬管；7、金属管；8、炉体；9、腔室盖；10、炉口法兰。
具体实施方式
下面结合附图，说明本发明的具体实施方式。
如图2和图3所示，本发明所述的光伏电池背钝化沉积装置具有一个主机室，主机室内至少具有一个工艺腔室5，工艺腔室5一端通过炉口法兰10与腔室盖9紧密连接，另一端与外部的尾气处理装置连通。工艺腔室5的内壁为石英衬管6，石英衬管6的外周沿轴向套设保护套管，保护套管外部为加热炉体8。保护套管可以是金属管7，保护套管选用不锈钢材料如310钢材或其他材料。本发明还可以在金属管7与石英衬管6之间沿轴向套设石英管，即工艺腔室5的壁层结构是金属管7及石英衬管6，或者是金属管7、石英管及石英衬管6。保护套管的一端部与炉口法兰10密封连接。本发明设置保护套管的目的是当设备通入TMA（三甲胺）气体镀氧化铝膜时，防止石英衬管6或石英管发生破裂，导致有毒的TMA及尾气泄漏造成污染和危险。为了先后实现氧化铝(Al2O3)、氧化硅(SiO2)、氮氧化硅（SiOxNy）、氮化硅(Si3N4)的沉积工艺，在炉口法兰10上集成有TMA（三甲胺）进气口、笑气（N2O）进气口、硅烷（SiH4）进气口、氨气（NH3）进气口、氮气（N2）进气口等五个进气口，分别与外部的TMA气源、笑气气源、硅烷气源、氨气气源和氮气气源通过气路对应连通并由控制阀控制开闭，五个进气口均通入工艺腔室5。工艺腔室5对放入其中的硅片加热，发生不同的沉积反应，对硅片先后进行多层镀钝化膜反应。此外，TMA（三甲胺）进气口、笑气（N2O）进气口、硅烷（SiH4）进气口、氨气（NH3）进气口、氮气（N2）进气口五个进气口还可以分布在工艺腔室5的一端或两端上，或者由工艺腔室5端部的气管延伸到工艺腔室5的中部。所述五个进气口在通入工艺腔室5前可以自由组成合并管路，并由对应的控制阀选择性通气。
本发明在工作时，先打开主机室中工艺腔室5的腔室盖9，在工艺腔室5内放入装有硅片的置片架或推拉舟，关闭腔室盖9使工艺腔室5保持密封。通过TMA进气口通入TMA气体，通过笑气进气口通入笑气，在反应温度下在硅片表面镀氧化铝钝化膜。然后对工艺腔室5进行氮气吹扫并抽真空，通过硅烷进气口通入硅烷，通过笑气进气口通入笑气，在反应温度下在硅片表面镀氧化硅或氮氧化硅钝化膜。最后再对工艺腔室5进行氮气吹扫并抽真空，通过硅烷进气口通入硅烷，通过氨气进气口通入氨气，在反应温度下在硅片表面镀氮化硅钝化膜。通过三次通入不同气体及对应反应条件实现氧化铝(Al2O3)、氧化硅(SiO2)、氮氧化硅（SiOxNy）、氮化硅(Si3N4)等多层钝化膜的镀膜工艺。
以上描述是对本发明的解释，不是对发明的限定，在不违背本发明精神的情况下，本发明可以作任何形式的修改。
Claims (10)
1.一种光伏电池背钝化沉积装置，其特征在于：具有一个主机室，主机室内至少具有一个工艺腔室（5），工艺腔室（5）一端通过炉口法兰（10）与腔室盖（9）紧密连接，另一端与外部的尾气处理装置连通，工艺腔室（5）的壁层结构是保护套管及石英衬管（6），或者是保护套管、石英管及石英衬管（6），在工艺腔室（5）的端部设置有TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口，五个进气口均通入工艺腔室（5）。
2.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：工艺腔室（5）的内壁为石英衬管（6），在石英衬管（6）外周沿轴向套设保护套管或者石英管及保护套管，保护套管外部为加热炉体（8）。
3.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：保护套管为耐高温金属管（7）。
4.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：保护套管为不锈钢钢管。
5.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：保护套管的材料为310钢材。
6.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：保护套管的一端部与炉口法兰（10）密封连接。
7.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口均集成在炉口法兰（10）上。
8.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口分布在工艺腔室（5）的一端或两端上，或者由工艺腔室（5）端部的气管延伸到工艺腔室（5）的中部。
9.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：TMA进气口、笑气进气口、硅烷进气口、氨气进气口、氮气进气口五个进气口分别与外部的TMA气源、笑气气源、硅烷气源、氨气气源和氮气气源对应连通并由气路控制阀控制开闭。
10.根据权利要求1所述的光伏电池背钝化沉积装置，其特征在于：所述五个进气口在通入工艺腔室前自由组成合并管路，并由对应的控制阀选择性通气。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910519405.9A CN110129770A (zh) | 2019-06-17 | 2019-06-17 | 光伏电池背钝化沉积装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910519405.9A CN110129770A (zh) | 2019-06-17 | 2019-06-17 | 光伏电池背钝化沉积装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110129770A true CN110129770A (zh) | 2019-08-16 |
Family
ID=67577435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910519405.9A Pending CN110129770A (zh) | 2019-06-17 | 2019-06-17 | 光伏电池背钝化沉积装置 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110129770A (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854243A (zh) * | 2019-12-31 | 2020-02-28 | 昊诚光电（太仓）有限公司 | 一种氮氧化硅perc背钝化方法及钝化炉 |
| CN112921302A (zh) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | 光伏电池双向进气钝化沉积装置 |
| CN113667962A (zh) * | 2021-08-11 | 2021-11-19 | 江苏微导纳米科技股份有限公司 | 复合膜及其制备方法 |
| CN115448612A (zh) * | 2022-09-15 | 2022-12-09 | 无锡松煜科技有限公司 | 一种石英件防护处理方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130186464A1 (en) * | 2012-01-03 | 2013-07-25 | Shuran Sheng | Buffer layer for improving the performance and stability of surface passivation of silicon solar cells |
| CN205793426U (zh) * | 2015-10-07 | 2016-12-07 | 丽源光电股份有限公司 | 石英加热管 |
| CN107256894A (zh) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | 管式perc单面太阳能电池及其制备方法和专用设备 |
| CN107287579A (zh) * | 2017-06-07 | 2017-10-24 | 浙江爱旭太阳能科技有限公司 | 管式perc太阳能电池的镀膜设备及镀膜方法 |
| CN208189528U (zh) * | 2017-10-24 | 2018-12-04 | 普罗斯电器（中国）有限公司 | 一种双管密闭防爆型双端气体放电灯 |
-
2019
- 2019-06-17 CN CN201910519405.9A patent/CN110129770A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130186464A1 (en) * | 2012-01-03 | 2013-07-25 | Shuran Sheng | Buffer layer for improving the performance and stability of surface passivation of silicon solar cells |
| CN205793426U (zh) * | 2015-10-07 | 2016-12-07 | 丽源光电股份有限公司 | 石英加热管 |
| CN107256894A (zh) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | 管式perc单面太阳能电池及其制备方法和专用设备 |
| CN107287579A (zh) * | 2017-06-07 | 2017-10-24 | 浙江爱旭太阳能科技有限公司 | 管式perc太阳能电池的镀膜设备及镀膜方法 |
| CN208189528U (zh) * | 2017-10-24 | 2018-12-04 | 普罗斯电器（中国）有限公司 | 一种双管密闭防爆型双端气体放电灯 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854243A (zh) * | 2019-12-31 | 2020-02-28 | 昊诚光电（太仓）有限公司 | 一种氮氧化硅perc背钝化方法及钝化炉 |
| CN110854243B (zh) * | 2019-12-31 | 2024-03-22 | 太仓市哲泰天产品设计有限公司 | 一种氮氧化硅perc背钝化方法及钝化炉 |
| CN112921302A (zh) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | 光伏电池双向进气钝化沉积装置 |
| CN113667962A (zh) * | 2021-08-11 | 2021-11-19 | 江苏微导纳米科技股份有限公司 | 复合膜及其制备方法 |
| CN115448612A (zh) * | 2022-09-15 | 2022-12-09 | 无锡松煜科技有限公司 | 一种石英件防护处理方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110129770A (zh) | 光伏电池背钝化沉积装置 | |
| CN110335901B (zh) | 光伏电池表面钝化系统及钝化方法 | |
| CN110042370B (zh) | 一种管式pecvd设备的反应室结构 | |
| CN106449782A (zh) | 晶体硅太阳能电池氮化硅减反射膜结构及其制备方法 | |
| CN109023305A (zh) | 一种管间资源共用的管式pecvd设备 | |
| CN107464857A (zh) | 一种降低perc电池片衰减的镀膜工艺方法 | |
| CN115094521B (zh) | 一种硼扩散反应系统及其工艺方法 | |
| CN210429833U (zh) | 光伏电池表面钝化系统 | |
| CN210085579U (zh) | 光伏电池背钝化沉积装置 | |
| CN201804848U (zh) | 一种用于制造半导体器件的氧化装置 | |
| CN112382553A (zh) | 一种双层反应腔体结构 | |
| CN207405235U (zh) | 一种残余化学气体的处理装置 | |
| CN214327882U (zh) | 一种适用于pecvd设备制备氧化层工艺的气路传输系统 | |
| CN213845292U (zh) | 一种双层反应腔体结构 | |
| CN210104072U (zh) | 一种tma介质的供给系统 | |
| CN114959649A (zh) | 一种基片处理设备和方法 | |
| CN111916530A (zh) | 量产型高效光伏电池三合一镀膜设备 | |
| CN101899653B (zh) | 一种工艺气体的输送法兰 | |
| CN218146941U (zh) | 管式pecvd设备 | |
| CN218146928U (zh) | 低压化学气相沉积的进气结构及气相沉积设备 | |
| CN210104070U (zh) | 一种tma介质的蒸发系统 | |
| CN213242577U (zh) | 量产型高效光伏电池三合一镀膜设备 | |
| CN217651315U (zh) | Pecvd反应炉及pecvd反应系统 | |
| CN109545899A (zh) | 一种太阳能电池片生产用氮封工艺 | |
| CN218372509U (zh) | 一种管式pecvd炉管 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |