CN112736145B - 一种太阳能电池的背面结构和含该背面结构的太阳能电池 - Google Patents

一种太阳能电池的背面结构和含该背面结构的太阳能电池 Download PDF

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CN112736145B
CN112736145B CN202011594855.3A CN202011594855A CN112736145B CN 112736145 B CN112736145 B CN 112736145B CN 202011594855 A CN202011594855 A CN 202011594855A CN 112736145 B CN112736145 B CN 112736145B
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李红博
何胜
单伟
徐伟智
曾鑫林
赵迎财
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Chint New Energy Technology Co Ltd
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Abstract

本发明涉及太阳能电池背面结构技术领域，为满足太阳能电池的钝化需求趋势，公开一种太阳能电池的背面结构，包括设置在硅片基底上的氧化铝膜层、氧化铝膜层上由内向外依次设置的第一氮化硅膜层、第一氮氧化硅膜层，还包括设置在第一氮氧化硅膜层上的第二氮化硅膜层；第一氮化硅膜层的折射率大于第二氮化硅膜层，第二氮化硅膜层的折射率大于第一氮氧化硅膜层。本发明通过设置氮化硅膜层和氮氧化硅膜层，并使氮氧化硅膜层与氮化硅膜层相对交替布置，可以满足太阳能电池的钝化需求，重点提升太阳能电池的Uoc、Isc、FF和Eta等性能指标，应用于双面或单面PERC太阳能电池、TopCon太阳能电池，使得太阳能电池的效率得到提升。

Description

一种太阳能电池的背面结构和含该背面结构的太阳能电池
技术领域
本发明涉及太阳能电池背面结构技术领域，具体涉及一种太阳能电池的背面结构和含该背面结构的太阳能电池。
背景技术
太阳能光伏电池背表面利用等离子体增强化学气相沉积(PECVD)技术沉积氮化硅是实现界面钝化、增反和保护氧化铝膜层的重要工艺步骤。
现有太阳能电池中，如双面PERC太阳能电池，背面结构为氧化铝叠加氮化硅膜。PERC 电池的制备过程中为了保证背面较小的界面态、长波光的内反射以及H钝化要求，一般会采用氧化铝+氮化硅的结构对背面进行处理，在降本增效的大趋势下，继续提升表面钝化效果成为了重点需要攻克的技术难题。但现有的氧化铝叠加氮化硅膜层结构已难以实现更高场钝化及H钝化要求，影响了太阳能电池的各性能指标，如Uoc、Isc、Eta以及转化效率的提升。
发明内容
为满足太阳能电池的钝化需求趋势，提升太阳能电池的性能，本发明的目的在于提供一种太阳能电池的背面结构，以满足太阳能电池的钝化需求，提升太阳能电池的性能。
本发明的另一目的在于提供使用该背面结构的太阳能电池。
本发明提供如下的技术方案：
一种太阳能电池的背面结构，所述背面结构包括设置在太阳能电池的硅片基底上的氧化铝膜层、氧化铝膜层上由内向外依次设置的第一氮化硅膜层、第一氮氧化硅膜层；所述第一氮化硅膜层的折射率大于第一氮氧化硅膜层。
本发明的太阳能电池的背面结构中，在氧化铝膜层上设置氮化硅膜层和氮氧化硅膜层，并且使氮氧化硅膜层的折射率小于氮化硅膜层，满足太阳能电池的钝化需求，提升太阳能电池的性能。
作为本发明的优选，所述背面结构还包括设置在第一氮氧化硅膜层上的第二氮化硅膜层；所述第一氮化硅膜层的折射率大于第二氮化硅膜层，所述第二氮化硅膜层的折射率大于第一氮氧化硅膜层。在上述氮化硅和氮氧化硅膜层的基础上，进一步设置氮化硅膜层，实现氮氧化硅膜层和氮化硅膜层的交替布置，并且使得中间的氮氧化硅膜层的折射率小于两侧的氮化硅膜层，而氮化硅膜层的折射率整体上由内向外依次减小。
作为本发明的优选，第一氮化硅膜层的折射率为2.4～2.3，膜厚为10～25nm；第二氮化硅膜层的折射率为2.2～1.9，膜厚为30～60nm；第一氮氧化硅膜层的折射率为1.9～1.7，膜厚为10～20nm。发明人研究发现，当氮氧化硅膜层为最外层时，其选择的折射率和膜厚也可以选择的更大、更厚一些。
作为本发明的优选，所述第二氮化硅膜层包括至少一层子氮化硅膜层；所述子氮化硅膜层的折射率由内向外依次减小。
作为本发明的优选，所述第二氮化硅膜层包括三层子氮化硅膜层，各子氮化硅膜层的折射率/厚度由内向外依次为：2.2～2.1/15～25nm、2.1～2.0/8～15nm和2.0～1.9/8～15nm。
作为本发明的优选，所述背面结构还包括设于第二氮化硅膜层上的第二氮氧化硅膜层；所述第二氮氧化硅膜层的折射率为1.7～2.0，膜厚8～15nm。通过设置外侧的第二氮氧化硅膜层，进一步强化氮化硅和氮氧化硅膜层的交替布置结构，提升太阳能电池的各项性能，提升能量转化效率和双面效率。
作为本发明的优选，所述背面结构还包括设于第二氮氧化硅膜层上的氧化硅膜层；所述氧化硅膜层的折射率为1.5～1.6，膜厚8～15nm。通过氧化硅膜层进一步强化背面结构的性能提升。
包括上述太阳能电池的背面结构的PERC太阳能电池。
包括上述太阳能电池的背面结构的TopCon太阳能电池。
本发明的有益效果如下：
本发明的太阳能电池的背面结构通过设置氮化硅膜层和氮氧化硅膜层，并使氮氧化硅膜层与氮化硅膜层相对交替布置，可以满足太阳能电池的钝化需求，重点提升太阳能电池的Uoc、 Isc、FF和Eta等性能指标，应用于双面或单面PERC太阳能电池、TopCon太阳能电池，使得太阳能电池的效率得到提升。
具体实施方式
下面就本发明的具体实施方式作进一步说明。
如无特别说明，本发明中所采用的原料均可从市场上购得或是本领域常用的，如无特别说明，下述实施例中的方法均为本领域的常规方法；
实施例1
一种太阳能电池的背面结构，包括硅片基底，在硅片基底的背面首先沉积由氧化铝膜层，然后再依次沉积第一氮化硅膜层和第一氮氧化硅膜层，其中，第一氮化硅膜层的折射率大于第一氮氧化硅膜层，第一氮化硅膜层的折射率2.35，膜厚为33nm；第一氮氧化硅膜层的折射率为2.0，膜厚为45nm。
实施例2
一种太阳能电池的背面结构，包括硅片基底，与实施例1的不同之处在于，在第一氮氧化硅膜层上还沉积有第二氮化硅膜层；第二氮化硅膜层的折射率大于第一氮氧化硅膜层且小于第一氮化硅膜层；第一氮化硅膜层的折射率2.35，膜厚为33nm；第一氮氧化硅膜层的折射率为 1.8，膜厚为20nm，第二氮化硅层的折射率为1.9，膜厚为38nm。
实施例3
一种太阳能电池的背面结构，包括硅片基底，与实施例1的不同之处在于，
在第一氮氧化硅膜层上还沉积有第二氮化硅膜层，该第二氮化硅膜层由三层子氮化硅膜层组成，由氧化铝膜层指向第一氮化硅膜层的方向由内向外依次为第一子氮化硅膜层、第二子氮化硅膜层、第三子氮化硅膜层；其中，第二氮化硅膜层的折射率大于第一氮氧化硅膜层且小于第一氮化硅膜层，第二氮化硅膜层内各膜层的折射率由内向外依次减小。
各膜层的折射率和厚度依次为：第一氮化硅膜层：2.35/20nm，第一氮氧化硅膜层：1.9/12nm，第二氮化硅膜层内：第一子氮化硅膜层2.2/25nm、2.1/11nm、2.0/10nm。
实施例4
一种太阳能电池的背面结构，包括硅片基底，与实施例3的不同之处在于，
在第二氮化硅膜层的第三子氮化硅膜层上还沉积有第二氮氧化硅膜层；
各膜层的折射率和厚度依次为：第一氮化硅膜层：2.35/20nm，第一氮氧化硅膜层：1.9/12nm，第二氮化硅膜层内：第一子氮化硅膜层2.2/15nm、2.1/11nm、2.0/10nm，第二氮氧化硅膜层： 1.7/10nm。
实施例5
一种太阳能电池的背面结构，包括硅片基底，与实施例4的不同之处在于，在第二氮氧化硅膜层上还沉积有氧化硅膜层。
各膜层的折射率和厚度依次为：第一氮化硅膜层：2.35/16nm，第一氮氧化硅膜层：1.9/12nm，第二氮化硅膜层内：第一子氮化硅膜层2.2/10nm、2.1/10nm、2.0/10nm，第二氮氧化硅膜层： 1.7/10nm，氧化硅膜层1.5/10nm。
对比例1
与实施例1的不同之处在于，在氧化铝膜层上仅沉积三层氮化硅膜层，三层氮化硅膜层的折射率/厚度由内向外依次为2.4/25nm、2.2/20nm、2.1/33nm。
采用含有上述实施例1～5和对比例1～3的背面结构的双面PERC电池(正面结构相同，正面和背面电极设置相同)测试各背面结构对于双面PERC电池的性能影响，结果如下表所示。
Figure BDA0002870047060000041
采用本申请的技术方案，将氮氧化硅层和氮化硅层交替布置，可以促进电池各项性能参数的提升；尤其是当在交替结构的最外侧设置氮氧化硅层可以明显促进Uoc、Isc等性能提升，并提升双面率，而最外侧进一步设置氧化硅层更有利于证明Eta的提升。

Claims (11)

1.一种太阳能电池的背面结构，其特征在于，所述背面结构包括设置在太阳能电池的硅片基底上的氧化铝膜层、氧化铝膜层上由内向外依次设置的第一氮化硅膜层、第一氮氧化硅膜层；所述第一氮化硅膜层的折射率大于第一氮氧化硅膜层；
所述背面结构还包括设置在第一氮氧化硅膜层上的第二氮化硅膜层；
所述第一氮化硅膜层的折射率大于第二氮化硅膜层，所述第二氮化硅膜层的折射率大于第一氮氧化硅膜层；
所述背面结构还包括设于第二氮化硅膜层上的第二氮氧化硅膜层。
2.根据权利要求1所述的太阳能电池的背面结构，其特征在于，第一氮化硅膜层的折射率为2.4~2.3，膜厚为10~25nm。
3.根据权利要求1所述的太阳能电池的背面结构，其特征在于，第二氮化硅膜层的折射率为2.2~1.9，膜厚为30~60nm。
4.根据权利要求1所述的太阳能电池的背面结构，其特征在于，第一氮氧化硅膜层的折射率为1.7~1.9，膜厚为10~20nm。
5.根据权利要求2至4任一所述的太阳能电池的背面结构，其特征在于，所述第二氮化硅膜层包括至少一层子氮化硅膜层；所述子氮化硅膜层的折射率由内向外依次减小。
6.根据权利要求5所述的太阳能电池的背面结构，其特征在于，第二氮化硅膜层包括三层子氮化硅膜层，子氮化硅膜层的折射率/厚度由内向外依次为：2.2~2.1/15~25nm、2.1~2.0/8~15nm和2.0~1.9/8~15nm。
7.根据权利要求1所述的太阳能电池的背面结构，其特征在于，所述第二氮氧化硅膜层的折射率为1.7～2.0，膜厚8～15nm。
8.根据权利要求7所述的太阳能电池的背面结构，其特征在于，所述背面结构还包括设于第二氮氧化硅膜层上的氧化硅膜层。
9.根据权利要求8所述的太阳能电池的背面结构，其特征在于，所述氧化硅膜层的折射率为1.5～1.6，膜厚8～15nm。
10.一种包括如权利要求1至9任一所述的太阳能电池的背面结构的PERC太阳能电池。
11.一种包括如权利要求1至9任一所述的太阳能电池的背面结构的TopCon太阳能电池。
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