CN111584665A - 一种用于薄片化双面电池的背面氮化硅叠层膜的制备方法 - Google Patents
一种用于薄片化双面电池的背面氮化硅叠层膜的制备方法 Download PDFInfo
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Abstract
本专利提供了一种适用于薄片化双面电池的背面氮化硅叠层膜的制备方法，其特征在于，在电池背面沉积SiNx薄膜步骤中沉积至少2层SiNx薄膜；所述电池背面沉积的SiNx薄膜是由不同折射率、不同厚度的SiNx薄膜周期性排列形成的叠层膜结构；所述SiNx薄膜的厚度为10‑100nm，折射率为1.5‑2.2，沉积时间为100‑600s。本发明的SiNx叠层膜是采用PECVD方法制备，通过改变SiH4和NH3的流量大小及沉积时间获得不同折射率和不同厚度的SiNx膜层，从而调控其光子带隙中心波长的位置，反射特定波长的光。本发明通过采用背面SiNx叠层膜形式，增加背面长波光的反射率，有效提升了光吸收率，对短路电流有明显的增益，提高了电池的转换效率。
Description
技术领域
本发明涉及一种双面太阳能电池领域，特别是薄片化双面电池的沉积制备。
背景技术
随着我国电价平价上网政策的不断推进，硅片厚度减小是太阳能电池成本降低最直接有效的措施，但硅片厚度减薄会使长波的吸收损失更加明显，短路电流密度降低，从而影响N型太阳电池效率的提升。以N-PERT为代表的N型高效光伏电池受到研究者和企业的关注。N-PERT电池具有少子寿命高，效率提升空间大等优点，且可以与Topcon技术很好的对接。因此在晶硅电池的背面沉积一层能够调控入射太阳光的钝化薄膜，对改善电池的光利用率，进而提高电池的光电转换效率具有重要的意义。
常规太阳能电池对长波的吸收能力较差，导致长波光直接穿透电池而不能被有效吸收，降低了太阳能电池的光捕获率和转换效率。此外，随着平价上网的不断推进，硅片厚度减小是降低太阳能电池成本最直接有效的措施，但硅片厚度减薄会使长波的吸收损失更加明显，短路电流密度降低，从而影响N型太阳电池效率的提升。因此在晶硅电池的背面沉积一层能够调控入射太阳光的背膜，对改善电池的长波利用率，进而提高电池的光电转换效率具有重要的意义。
光子晶体：是一种介电常数随空间周期性变化的具有光子带隙的结构，对光具有一定的调控作用。当入射光的频率与光子带隙匹配时，入射光被全部反射，不能穿透光子晶体。
SiNx叠层膜：由两种不同折射率ni(i＝1,2)、不同厚度xi(i＝1,2)的SiNx 膜周期性排列而成，此周期性排列的SiNx膜形成光子晶体。通过调节两种SiNx 薄膜的折射率ni(i＝1,2)和厚度xi(i＝1,2)改变光子晶体膜的光子带隙，从而实现对长波长光的反射目的，提高电池的光利用率。
发明内容
本发明的主要目的在于研制一种适用于薄片化双面电池的背面氮化硅叠层膜的制备方法，在电池背面沉积SiNx薄膜步骤中沉积至少2层SiNx薄膜；所述电池背面沉积的SiNx薄膜是由不同折射率、不同厚度的SiNx薄膜周期性排列形成的叠层膜结构，此周期性排列的SiNx膜形成了光子晶体；所述SiNx薄膜的厚度为10-100nm，折射率为1.5-2.2，沉积时间为100-600s。
更进一步，所述电池背面的SiNx薄膜是由两层SiNx薄膜周期性排列形成，第一层SiNx薄膜的折射率n1为1.5-1.8，第二层SiNx薄膜的折射率n2为 1.9-2.2。
更进一步，制备所述第一层SiNx薄膜的SiH4流量为400-500sccm，NH3 流量为3000-4000sccm；制备所述第二层SiNx薄膜的SiH4流量为600-800 sccm，NH3流量为2000-4000sccm。
本发明与现有技术相比存在以下优点和积极效果：
1)本发明提供的适用于薄片化双面电池的背面SiNx叠层膜，是通过PECVD 方法沉积SiNx叠层结构，可以将穿透电池的光反射回电池内部，提高电池的光利用率，从而使光电转换效率得到提升。
2)本发明提供的适用于薄片化双面电池的背面SiNx叠层膜基于光子晶体的慢光效应也可增强电池的光吸收能力。该光子晶体光子带隙中心波长可在 380-1100nm之间任意调节，禁带中心波长的反射率最高可达99％。
3)本发明提供的结构设计特别适合薄片化电池，使得电池效率不受硅片厚度降低的影响。
4)本发明的实现不需要购买新设备，仅通过改变SiNx薄膜的制备工艺即可实现。
附图说明
图1是N型双面电池的结构示意图
具体实施方式
实施例
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
图1是N型双面电池的结构示意图和本发明SiNx叠层膜结构的示意图。n1 为第一层膜的折射率，x1为第一层膜的厚度；n2为第二层膜的折射率，x2为第二层膜的厚度。
如图所示，本发明实施例提供的一种适用于薄片化双面电池的背面氮化硅叠层膜的制备方法，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA 清洗、退火、背面沉积SiNx薄膜、BOE清洗、正面镀Al2O3、正面镀SiNx薄膜、印刷和烧结。电池背面沉积的SiNx薄膜是由两种不同折射率ni(i＝1,2)、不同厚度xi(i＝1,2)的SiNx薄膜周期性排列形成的叠层膜结构，此周期性排列的SiNx形成了光子晶体。第一种SiNx薄膜的折射率为n1，厚度为x1，第二种 SiNx薄膜的折射率为n2，厚度为x2。
具体叠层膜如下：
第一种SiNx薄膜的厚度为10-100nm，折射率为1.5-1.8。其中，SiH4流量 400-500sccm，NH3流量3000-4000sccm，沉积时间100-600s。
第二种SiNx薄膜的厚度为10-100nm，折射率为1.9-2.2。其中，SiH4流量 600-800sccm，NH3流量2000-4000sccm，沉积时间100-600s。
以上所述，仅为本发明的较佳实施例，并非对本发明任何形式上和实质上的限制，应当指出，对于本技术领域的普通技术人员，在不脱离本发明方法的前提下，还将可以做出若干改进和补充，这些改进和补充也应视为本发明的保护范围。凡熟悉本专业的技术人员，在不脱离本发明的精神和范围的情况下，当可利用以上所揭示的技术内容而做出的些许更动、修饰与演变的等同变化，均为本发明的等效实施例；同时，凡依据本发明的实质技术对上述实施例所作的任何等同变化的更动、修饰与演变，均仍属于本发明的技术方案的范围内。
Claims (3)
1.一种适用于薄片化双面电池的背面氮化硅叠层膜的制备方法，其特征在于，在电池背面沉积SiNx薄膜步骤中沉积至少2层SiNx薄膜；所述电池背面沉积的SiNx薄膜是由不同折射率、不同厚度的SiNx薄膜周期性排列形成的叠层膜结构；所述SiNx薄膜的厚度为10-100nm，折射率为1.5-2.2，沉积时间为100-600s。
2.根据权利要求1所述的一种适用于薄片化双面电池的背面氮化硅叠层膜的制备方法，其特征在于，所述电池背面的SiNx薄膜是由两层SiNx薄膜周期性排列形成，第一层SiNx薄膜的折射率n1为1.5-1.8，第二层SiNx薄膜的折射率n2为1.9-2.2。
3.根据权利要求2所述的一种适用于薄片化双面电池的背面氮化硅叠层膜的制备方法，其特征在于，制备所述第一层SiNx薄膜的SiH4流量为400-500sccm，NH3流量为3000-4000sccm；制备所述第二层SiNx薄膜的SiH4流量为600-800sccm，NH3流量为2000-4000sccm。
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| KR20120083963A (ko) * | 2011-01-19 | 2012-07-27 | 전북대학교산학협력단 | 실리콘 태양전지 및 그 제조방법 |
| US20160093507A1 (en) * | 2014-09-30 | 2016-03-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method of localized annealing of semi-conducting elements using a reflective area |
| CN105576083A (zh) * | 2016-03-11 | 2016-05-11 | 泰州中来光电科技有限公司 | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 |
| CN108231917A (zh) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | 一种perc太阳能电池及其制备方法 |
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| KR20120083963A (ko) * | 2011-01-19 | 2012-07-27 | 전북대학교산학협력단 | 실리콘 태양전지 및 그 제조방법 |
| US20160093507A1 (en) * | 2014-09-30 | 2016-03-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method of localized annealing of semi-conducting elements using a reflective area |
| CN105576083A (zh) * | 2016-03-11 | 2016-05-11 | 泰州中来光电科技有限公司 | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 |
| CN108231917A (zh) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | 一种perc太阳能电池及其制备方法 |
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| CN112760614A (zh) * | 2020-12-09 | 2021-05-07 | 晋能清洁能源科技股份公司 | 一种多晶pecvd镀膜均匀性优化的方法 |
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