CN107256898B - 管式perc双面太阳能电池及其制备方法和专用设备 - Google Patents

管式perc双面太阳能电池及其制备方法和专用设备 Download PDF

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Publication number
CN107256898B
CN107256898B CN201710353392.3A CN201710353392A CN107256898B CN 107256898 B CN107256898 B CN 107256898B CN 201710353392 A CN201710353392 A CN 201710353392A CN 107256898 B CN107256898 B CN 107256898B
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China
Prior art keywords
silicon
film
stuck point
back side
silane
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CN201710353392.3A
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CN107256898A (zh
Inventor
方结彬
林纲正
赖俊文
何乃林
殷文杰
何达能
陈刚
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Zhejiang Love Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
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Zhejiang Love Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
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Priority to CN201710353392.3A priority Critical patent/CN107256898B/zh
Application filed by Zhejiang Love Solar Energy Technology Co Ltd, Guangdong Aiko Technology Co Ltd filed Critical Zhejiang Love Solar Energy Technology Co Ltd
Priority to KR1020197012483A priority patent/KR102195596B1/ko
Priority to EP17910294.2A priority patent/EP3627563A4/en
Priority to US16/345,751 priority patent/US20200058817A1/en
Priority to PCT/CN2017/086030 priority patent/WO2018209729A1/zh
Priority to JP2019525907A priority patent/JP6825101B2/ja
Publication of CN107256898A publication Critical patent/CN107256898A/zh
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Publication of CN107256898B publication Critical patent/CN107256898B/zh
Priority to US17/128,459 priority patent/US11848395B2/en
Priority to US17/128,494 priority patent/US20210111295A1/en
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Abstract

本发明公开了一种管式PERC双面太阳能电池，包括背银主栅、铝栅线、背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极；所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种，且采用管式PECVD设备在硅片背面沉积而成，所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.5‑1mm。本发明还公开了一种管式PERC双面太阳能电池的制备方法及专用设备。采用本发明，可双面吸收太阳光，光电转换效率高，外观良率和EL良率高，解决划伤和绕镀的问题。

Description

管式PERC双面太阳能电池及其制备方法和专用设备
技术领域
本发明涉及太阳能电池领域，尤其涉及一种管式PERC双面太阳能电池、以及管式PERC双面太阳能电池的制备方法和专用设备。
背景技术
晶硅太阳能电池是一种有效吸收太阳辐射能，利用光生伏打效应把光能转换成电能的器件，当太阳光照在半导体P-N结上，形成新的空穴-电子对，在P-N结电场的作用下，空穴由N区流向P区，电子由P区流向N区，接通电路后就形成电流。
传统晶硅太阳能电池基本上只采用正面钝化技术，在硅片正面用PECVD的方式沉积一层氮化硅，降低少子在前表面的复合速率，可以大幅度提升晶硅电池的开路电压和短路电流，从而提升晶硅太阳电池的光电转换效率。
随着对晶硅电池的光电转换效率的要求越来越高，人们开始研究背钝化太阳电池技术。目前主流的做法是采用板式PECVD来对背面镀膜，板式PECVD由不同的腔室组成，每个腔室镀一层膜，一旦设备固定，复合膜的层数就已经固定，因此板式PECVD的缺点是不能灵活调节复合膜的组合，不能更好的优化背面膜的钝化效果，从而限制电池的光电转换效率。同时，板式PECVD使用的是间接等离子法，膜层的钝化效果不太理想。板式PECVD还具有uptime低，维护时间长的缺点，影响产能和产量。
本发明采用管式PECVD技术在硅片背面沉积复合膜，制作双面PERC高效太阳能电池。由于管式PECVD技术采用的是直接等离子法，又可以灵活调节复合膜的组合和成分，膜层的钝化效果好，能大幅提升PERC太阳能电池的光电转换效率。管式PECVD技术的优秀钝化性能和工艺的灵活性还可以相对降低三氧化二铝膜层的厚度，减少TMA的耗量，同时，管式PERC技术容易维护，uptime高。综合以上多种因素，与板式PECVD技术相比，管式PECVD技术制作高效PERC电池有显著的综合成本优势。
尽管如此，管式PECVD技术由于存在绕镀和划伤这一对互相制约的难题，外观良率和EL良率一直比较低，影响该技术的大规模量产。
管式PECVD镀膜设备是通过将硅片插入石墨舟，再将石墨舟送入石英管做镀膜沉积。石墨舟通过3个卡点将硅片固定在石墨舟壁上，硅片的一面与石墨舟壁接触，在硅片的另外一面上沉积膜层。为了保证镀膜的均匀性，硅片要贴紧石墨舟壁，因此，卡点槽的宽度设置较小，约为0.25mm。管式PECVD镀膜有两个缺点：1，在插片过程中，硅片会与石墨舟壁发生摩擦，导致硅片挨着石墨舟壁的一面产生划伤。2，在沉积过程中，由于硅片与石墨舟壁之间不可避免的存在缝隙，尤其是卡点处的缝隙较大，工艺气体会扩散到硅片的另一面，在另一面形成膜的沉积，即绕镀，卡点处的绕镀更加严重。
用管式PECVD做常规太阳能电池的正面镀膜，划伤和绕镀对成品电池不会产生不良影响，原因在于：1，硅片背面没有PN结和镀膜，划痕不会影响电池的电性能和EL良率。2，常规电池的背面没有镀膜，绕镀到背面边缘的膜层较薄，看起来不明显，不影响外观良率。
但是，用管式PECVD制作PERC电池的背面膜，划伤和绕镀严重影响成品电池的合格率，问题在于：1，背面膜在沉积过程中，会绕镀到正面的边缘，由于PERC电池是双面镀膜，正面边缘的镀膜厚度较厚导致电池正面边缘出现舟齿印和色差，影响外观良率。2，插片到石墨舟的过程中，硅片的正面会接触石墨舟壁，正面PN结被划伤，导致EL测试出现划痕，影响电池的电性能。
发明内容
本发明所要解决的技术问题在于，提供一种管式PERC双面太阳能电池，可双面吸收太阳光，光电转换效率高，外观良率和EL良率高，解决划伤和绕镀的问题。
本发明所要解决的技术问题还在于，提供一种上述管式PERC双面太阳能电池的制备方法，工艺简单，可大规模量产，与目前生产线兼容性好，制得的电池外观良率和EL良率高，解决划伤和绕镀的问题。
本发明所要解决的技术问题还在于，提供一种上述管式PERC双面太阳能电池的专用设备，设备结构简单，降低成本，产量大，成品率高，制得的电池外观良率和EL良率高，解决划伤和绕镀的问题。
为了解决上述技术问题，本发明提供了一种管式PERC双面太阳能电池，包括背银主栅、铝栅线、背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极；所述背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极从下至上依次层叠连接；
所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种，且采用管式PECVD设备在硅片背面沉积而成，所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述四条气体管路单独或组合作用，用于形成所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜，通过调节气体流量比，可得到不同成分比例和折射率的氮氧化硅膜或氮化硅膜；所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.5-1mm；
所述背面复合膜再经过激光开槽后形成30-500个平行设置的激光开槽区，每个激光开槽区内设置至少1组激光开槽单元，所述铝栅线通过激光开槽区与P型硅相连；所述铝栅线与背银主栅垂直连接。
作为上述技术方案的改进，所述石墨舟的卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。
作为上述技术方案的改进，电池背面形成3-5个卡点印。
作为上述技术方案的改进，所述背面复合膜的底层为三氧化二铝膜，外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
作为上述技术方案的改进，所述背面复合膜的底层为二氧化硅膜，第二层为三氧化二铝膜，外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
作为上述技术方案的改进，所述三氧化二铝膜的厚度为5-15nm，所述氮化硅膜的厚度为50-150nm，所述氮氧化硅膜的厚度为5-20nm，所述二氧化硅膜的厚度为1-10nm。
相应的，本发明还提供一种管式PERC双面太阳能电池的制备方法，包括：
（1）在硅片正面和背面形成绒面，所述硅片为P型硅；
（2）在硅片正面进行扩散，形成N型发射极；
（3）去除扩散过程形成的磷硅玻璃和周边PN结，并对硅片背面进行抛光,背刻蚀深度为3-6微米；
（4）对硅片进行退火，退火温度为600-820度，氮气流量为1-15L/min，氧气流量为0.1-6 L/min；
（5）采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w；
所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.5-1mm；
（6）在硅片正面沉积钝化膜；
（7）对硅片背面复合膜上进行激光开槽；
其中，激光波长为532nm，激光功率为14w以上，激光划线速度在12m/s以上，频率500KHZ以上；
（8）在硅片背面印刷背银主栅浆料，烘干；
（9）在激光开槽区上印刷铝浆，使之与背银主栅浆料垂直连接；
（10）在硅片正面印刷正银电极浆料；
（11）对硅片进行高温烧结，形成背银主栅、铝栅线和正银电极；
（12）对硅片进行抗LID退火，制得管式PERC双面太阳能电池成品。
作为上述技术方案的改进，采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，三氧化二铝膜的沉积温度为250-300℃，时间为50-300s，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，氮氧化硅膜的沉积温度为350-410℃，时间为50-200s，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅膜的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
相应地，本发明还提供一种管式PERC双面太阳能电池的专用设备，所述专用设备为管式PECVD设备，管式PECVD设备包括晶片装载区、炉体、特气柜、真空系统、控制系统以及石墨舟，所述特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路以及用于通入笑气的第四气体管路；
所述石墨舟用于装卸硅片，所述石墨舟包括卡点，所述卡点包括卡点轴、卡点帽和卡点底座，所述卡点轴安装在卡点底座上，所述卡点帽与卡点轴连接，所述卡点轴与卡点帽、卡点底座之间形成卡点槽，卡点槽的深度为0.5-1mm。
作为上述技术方案的改进，所述卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。
实施本发明，具有如下有益效果：
首先，本发明管式PERC双面太阳能电池在电池背面设有多条平行设置的铝栅线，不仅替代现有单面太阳能电池中全铝背电场，实现背面吸光的功能，还用作背银电极中的副栅结构用于传导电子。制作本发明管式PERC双面太阳能电池，可节省银浆和铝浆的用量，降低生产成本，而且实现双面吸收光能，显著扩大太阳能电池的应用范围和提高光电转换效率。
其次，为了配合上述设有铝栅线的PERC双面太阳能电池，本发明采用管式PECVD设备在硅片背面沉积背面复合膜，所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种，且采用管式PECVD设备在硅片背面沉积而成，管式PERC设备采用直接等离子法，等离子直接对硅片表面进行轰击，膜层的钝化效果显著。所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述四条气体管路单独或组合作用，用于形成所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜。硅烷、氨气、三甲基铝、笑气四条气体管路可以通过采用不同的气体组合、不同的气体流量比，以及不同的沉积时间形成不同的膜层，对于氮化硅膜或氮氧化硅膜，通过调节气体流量比，可以得到不同成分比例和折射率的氮化硅膜或氮氧化硅膜。复合膜的组合顺序、厚度和膜的成分可以灵活调节，因此，本发明的生产过程灵活可控，降低成本，产量大。而且，通过优化背面复合膜，使其与背面的铝栅线相适配，产生最佳的钝化效果，大幅提升PERC电池的光电转换效率。
再次，本发明通过调节卡点轴直径和卡点底座直径的大小，减少卡点槽内侧的深度，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低电池正面边缘舟齿印的比例。而且，通过适当增加卡点帽斜面的角度和卡点帽的厚度，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，同时减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
进一步，由于氮化硅处于背面复合膜的外层，随着沉积时间的增加，硅片表面的膜层加厚，硅片发生弯曲，硅烷和氨气就会更容易绕镀到电池正面边缘。本发明设定氮化硅的沉积温度为390-410℃，时间为100-400s，通过缩短氮化硅沉积的时间和温度，可以降低硅片的弯曲度，减少绕镀的比例。氮化硅沉积的温度窗口很窄，为390-410℃，可以最大程度减少绕镀。但，当沉积温度低于390℃，绕镀的比例却上升。
同时为了满足大规模生产的需求，克服氮化硅沉积时间的缩短所带来负面影响，本发明将激光功率设置为14w以上，激光划线速度在12m/s以上，频率500KHZ以上，才能使背面复合膜单位面积上吸收到较大的单位激光能量，确保激光打开复合膜层，保证后续印刷的铝浆通过激光开槽区与基体硅接触。
综上，本发明管式PERC双面太阳能电池可双面吸收太阳光，光电转换效率高，外观良率和EL良率高，解决划伤和绕镀的问题。同时，本发明还提供制备上述电池的方法和专用设备，该方法工艺简单，可大规模量产，与目前生产线兼容性好。该专用设备结构简单，降低成本，产量大，成品率高。
附图说明
图1是本发明管式PERC双面太阳能电池的剖视图；
图2是图1所示管式PERC双面太阳能电池的背面结构的示意图；
图3是图1所示背面复合膜第一实施例的示意图；
图4是图1所示背面复合膜第二实施例的示意图；
图5是图1所示背面复合膜第三实施例的示意图；
图6是图1所示背面复合膜第四实施例的示意图；
图7是图1所示背面复合膜第五实施例的示意图；
图8是图1所示背面复合膜第六实施例的示意图；
图9是本发明管式PERC双面太阳能电池的专用设备的示意图；
图10是图9所示石墨舟的示意图；
图11是图10所示石墨舟的卡点的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。
现有的单面太阳能电池在电池的背面设有全铝背电场覆盖在硅片的整个背面，全铝背电场的作用是提高了开路电压Voc和短路电流Jsc，迫使少数载流子远离表面，少数载流子复合率降低，从而整体上提高电池效率。然而，由于全铝背电场不透光，因此，具有全铝背电场的太阳能电池背面无法吸收光能，只能正面吸收光能，电池的综合光电转换效率难以大幅度的提高。
针对上述技术问题，如图1所示，本发明提供一种管式PERC双面太阳能电池，包括背银主栅1、铝栅线2、背面复合膜3、P型硅5、N型发射极6、正面钝化膜7和正银电极8；所述背面复合膜3、P型硅5、N型发射极6、正面钝化膜7和正银电极8从下至上依次层叠连接；
所述背面复合膜3经过激光开槽后形成30-500组平行设置的激光开槽区，每个激光开槽区内设置至少1组激光开槽单元9，所述铝栅线2通过激光开槽区与P型硅5相连；所述铝栅线2与背银主栅1垂直连接。
本发明对现有的单面PERC太阳能电池进行改进，不再设有全铝背电场，而是将其变成许多的铝栅线2，采用激光开槽技术在背面复合膜3上开设激光开槽区，而铝栅线2印刷在这些平行设置的激光开槽区上，从而能与P型硅5形成局部接触，密集平行排布的铝栅线2不仅能起到提高开路电压Voc和短路电流Jsc，降低少数载流子复合率，提高电池光电转换效率的作用，可替代现有单面电池结构的全铝背电场，而且铝栅线2并未全面遮盖硅片的背面，太阳光可从铝栅线2之间投射至硅片内，从而实现硅片背面吸收光能，大幅提高电池的光电转换效率。
优选地，所述铝栅线2的根数与激光开槽区的个数对应，皆为30-500条，更佳地，所述铝栅线2的根数为80-220条。
如图2所示为硅片背面，铝栅线2与背银主栅1呈垂直连接，其中背银主栅1为连续直栅，由于背面复合膜3设有激光开槽区，印刷铝浆形成铝栅线2时，铝浆填充至激光开槽区，使得铝栅线2与P型硅5形成局部接触，可将电子传输至铝栅线2，与铝栅线2相交的背银主栅1则汇集铝栅线2上的电子，由此可知，本发明所述铝栅线2起到提高开路电压Voc和短路电流Jsc，降低少数载流子复合率，以及传输电子的作用，可替代现有单面太阳能电池中全铝背电场以及背银电极中的副栅结构，不仅减少银浆和铝浆的用量，降低生产成本，而且实现双面吸收光能，显著扩大太阳能电池的应用范围和提高光电转换效率。
本发明所述背银主栅1除了如图2所示为连续直栅的设置外，还可以呈间隔分段设置。也可以呈间隔分段设置，且各相邻分段间通过连通线连接。所述背银主栅1的宽度为0.5-5mm；所述背银主栅1的根数为2-8条。
需要说明的是，当每个激光开槽区内设置2组或2组以上激光开槽单元9时，各组激光开槽单元9平行设置，相邻两组激光开槽单元9之间的间距为5-480μm。
每组激光开槽单元9包括至少1个激光开槽单元9，激光开槽单元9的图案为圆形、椭圆形、三角形、四边形、五边形、六边形、十字形或星形。
本发明所述激光开槽区的宽度为10-500μm；位于激光开槽区下方的铝栅线2的宽度大于激光开槽区的宽度，铝栅线2的宽度为30-550μm。在上述铝栅线2宽度选择较大数值如500μm，而激光开槽区宽度选择较小数值如40μm，可将多组激光开槽区并排设在同一铝栅线2之上，保证铝栅线2与P型硅5有足够的接触面积。
需要说明的是,所述激光开槽区内设置的激光开槽单元，其与铝栅线可以是平行的，也可以是垂直的。
为了配合上述设有铝栅线的PERC双面太阳能电池，本发明采用管式PECVD设备在硅片背面沉积背面复合膜，管式PERC设备采用直接等离子法，等离子直接对硅片表面进行轰击，膜层的钝化效果显著。如图3-8所示，所述背面复合膜3包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种，且采用管式PECVD设备在硅片背面沉积而成。所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述四条气体管路单独或组合作用，用于形成所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜，通过调节气体流量比，可以得到不同成分比例和折射率的氮氧化硅膜或氮化硅膜，所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜的成型顺序、厚度可调，所述氮氧化硅膜、氮化硅膜的成分和折射率可调。
硅烷、氨气、三甲基铝、笑气四条气体管路可以通过采用不同的气体组合、不同的气体流量比，以及不同的沉积时间形成不同的膜层，对于氮化硅膜或氮氧化硅膜，通过调节气体流量比，可以得到不同成分比例和折射率的氮化硅膜或氮氧化硅膜。复合膜的组合顺序、厚度和膜的成分可以灵活调节，因此，本发明的生产过程灵活可控，降低成本，产量大。而且，通过优化背面复合膜，使其与背面的铝栅线相适配，产生最佳的钝化效果，大幅提升PERC电池的光电转换效率。
所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.5-1mm。优选的，所述石墨舟的卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。更佳的，所述石墨舟的卡点槽的深度为0.7-0.8mm，卡点底座的直径为8-12mm，卡点帽的斜面角度为35-40度，卡点帽的厚度为1-1.2mm。
对于管式PECVD做背膜沉积，划伤和绕镀是一对矛盾。通过调节自动插片机，让硅片在不接触石墨舟壁、硅片与石墨舟保持一定的距离的状态下插入卡点槽，避免硅片与石墨舟壁发生摩擦。如果硅片与石墨舟片的距离过大，划伤比例少，但是硅片不太容易贴紧舟壁，绕镀比例就会增加。如果距离太大，硅片有可能不能插入卡点槽，产生掉片的可能；如果硅片与石墨舟片的距离过小，硅片更贴紧石墨舟片，绕镀的比例小，划伤的比例就会增加。
电池正面边缘的舟齿印与PECVD背面镀膜的卡点相对应，是由于气流从卡点处绕镀到电池正面而形成。由于卡点底座的厚度略小于石墨舟片的厚度，导致卡点处的硅片与卡点底座之间存在缝隙，在镀背膜时，气流从卡点轴的下方两侧进入缝隙，使硅片的正面边缘形成膜层的沉积，即产生半圆形的舟齿印。
本发明通过调节卡点轴直径和卡点底座直径的大小，减少卡点槽内侧的深度，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低电池的正面边缘舟齿印的比例。
通过调整自动插片机，当硅片插入石墨舟中一定的位置，吸盘释放真空，硅片掉入卡点帽的斜面上，依靠重力，硅片从斜面滑落至贴紧石墨舟壁。这种无接触的插片方式，用来降低硅片的划伤比例。
本发明通过适当增加卡点帽斜面的角度和卡点帽的厚度，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，增加卡点帽的斜面角度还可以减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
所述管式PECVD设备装卸硅片的器具为石墨舟，电池背面形成卡点印。电池背面形成3-5个卡印点。
所述背面复合膜3有多种实施方式，参见图3、4和5，所述背面复合膜的底层为三氧化二铝膜，外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
如图3所示的背面复合膜的第一实施例，所述背面复合膜3的底层31为三氧化二铝膜，外层32由氮氧化硅膜、氮化硅膜组成。
如图4所示的背面复合膜的第二实施例，所述背面复合膜的底层31为三氧化二铝膜，外层32由氮化硅膜组成。
如图5所示的背面复合膜的第三实施例，所述背面复合膜的底层31为三氧化二铝膜，外层32由二氧化硅膜、氮氧化硅膜A、氮氧化硅膜B和氮化硅膜组成。
参见图6、7和8，所述背面复合膜的底层31为二氧化硅膜，第二层32为三氧化二铝膜，外层33由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
如图6所示的背面复合膜的第四实施例，所述背面复合膜的底层31为二氧化硅膜，第二层32为三氧化二铝膜，外层33由氮化硅膜组成。
如图7所示的背面复合膜的第五实施例，所述背面复合膜的底层31为二氧化硅膜，第二层32为三氧化二铝膜，外层33由二氧化硅膜、氮氧化硅膜A、氮氧化硅膜B、氮化硅膜组成。
如图8所示的背面复合膜的第六实施例，所述背面复合膜的底层31为二氧化硅膜，第二层32为三氧化二铝膜，外层33由二氧化硅膜、氮氧化硅膜和氮化硅膜A 、氮化硅膜B组成。
具体的，所述三氧化二铝膜的厚度为5-15nm，所述氮化硅膜的厚度为50-150nm，所述氮氧化硅膜的厚度为5-20nm，所述二氧化硅膜的厚度为1-10nm。所述三氧化二铝膜、氮化硅膜、氮氧化硅膜和二氧化硅膜的实际厚度可以根据实际需要进行调整，其实施方式并不局限于本发明所举实施例。
因此，本发明管式PERC双面太阳能电池可双面吸收太阳光，光电转换效率高，外观良率和EL良率高，解决划伤和绕镀的问题。
需要说明的是，EL（electroluminescence, 电致发光）,用于测试外观和电性能.可以测试晶体硅太阳电池及组件潜在缺陷。EL可以有效检测出电池是否有破片、隐裂、断栅、划伤、烧结缺陷、黑芯片、电池片混挡、电池片电阻不均匀等等。
相应地，本发明还提供管式PERC双面太阳能电池的制备方法，包括以下步骤：
（1）在硅片正面和背面形成绒面，所述硅片为P型硅。
选用湿法或者干法刻蚀技术，通过制绒设备在硅片表面形成绒面。
（2）在硅片正面进行扩散，形成N型发射极。
本发明所述制备方法采用的扩散工艺是将硅片置于热扩散炉中进行扩散，在P型硅的上方形成N型发射极，扩散时应控制控制温度在800℃-900℃范围内，目标方块电阻为70-100欧/□。
对于管式PERC电池，背面的P型硅与铝浆不是全接触，仅仅在激光的区域与铝浆接触，导致串联电阻大。为了提高管式PERC电池的性能，本发明选用较低扩散方阻（70-100欧/□），可以降低串联电阻，提高光电转换效率。
扩散过程中会在硅片的正面和背面形成磷硅玻璃层，磷硅玻璃层的形成是由于在扩散过程中，POCl3与O2反应生成P2O5淀积在硅片表面。P2O5与Si反应又生成SiO2和磷原子，这样就在硅片表面形成一层含有磷元素的SiO2，称之为磷硅玻璃。所述磷硅玻璃层可以在扩散时收集硅片中的杂质，可进一步降低太阳能电池的杂质含量。
（3）去除扩散过程形成的磷硅玻璃和周边PN结，并对硅片背面进行抛光,背刻蚀深度为3-6微米。
本发明将经扩散后的硅片置于体积比为1/5-8的HF（质量分数40%-50%）和HNO3（质量分数60%-70%）混合溶液酸槽中浸泡5-30s去除磷硅玻璃和周边PN结。磷硅玻璃层的存在容易导致PECVD的色差及SixNy的脱落，而且所述磷硅玻璃层中含有大量的磷以及从硅片中迁移的杂质，因此需要去除磷硅玻璃层。
常规电池的刻蚀深度为2微米左右，本发明将背刻蚀深度设为3-6微米，提高管式PERC电池的刻蚀深度，可以提高背反射率，提高电池的短路电流和光电转换效率。
（4）对硅片进行退火，退火温度为600-820度，氮气流量为1-15L/min，氧气流量为0.1-6 L/min；所述退火步骤可以改善硅片正面的掺杂浓度分布，减少掺杂带来的表面缺陷。
（5）采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w；
所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.5-1mm。
作为本步骤的优选实施方式，采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，三氧化二铝膜的沉积温度为250-300℃，时间为50-300s，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，氮氧化硅膜的沉积温度为350-410℃，时间为50-200s，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅膜的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
作为本步骤的更佳实施方式，采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为350-450sccm，TMA与N2O的比例为1/18-22，三氧化二铝膜的沉积温度为270-290℃，时间为100-200s，等离子功率为3000-4000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为80-150sccm，硅烷与笑气的比例为1/20-40，氨气的流量为1-4slm，氮氧化硅膜的沉积温度为380-410℃，时间为100-200s，等离子功率为4500-5500w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为600-800sccm，硅烷与氨气的比例为1/6-10，氮化硅膜的沉积温度为395-405℃，时间为350-450s，等离子功率为11000-12000w；
采用笑气沉积二氧化硅膜，笑气的流量为1-4slm，等离子功率为3000-4000w。
作为本步骤的最佳实施方式，采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为400sccm，TMA与N2O的比例为1/18，三氧化二铝膜的沉积温度为280℃，时间为140s，等离子功率为3500w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为130sccm，硅烷与笑气的比例为1/32，氨气的流量为0.5slm，氮氧化硅膜的沉积温度为420℃，时间为120s，等离子功率为5000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为780sccm，硅烷与氨气的比例为1:8.7，氮化硅膜的沉积温度为400℃，时间为350s，等离子功率为11500w；
采用笑气沉积二氧化硅膜，笑气的流量为2slm，等离子功率为3500w。
申请人发现，绕镀主要发生在氮化硅的沉积阶段。由于氮化硅处于背面复合膜的外层，随着沉积时间的增加，硅片表面的膜层加厚，硅片发生弯曲，硅烷和氨气就会更容易绕镀到电池正面边缘。通过缩短氮化硅沉积的时间和温度，可以降低硅片的弯曲度，减少绕镀的比例。进一步的试验表明，氮化硅沉积的温度窗口很窄，为390-410度，当进一步降低温度，绕镀的比例却上升。
沉积三氧化二铝膜时，将等离子功率设为2000-5000w；沉积氮氧化硅膜时，将等离子功率设为4000-6000w；沉积氮化硅膜时，将等离子功率设为10000-13000w；沉积二氧化硅膜时，等离子功率设为2000-5000w。确保不同的膜层都具有较佳的沉积速率，改善沉积的均匀性。
进一步，所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.5-1mm。石墨舟的技术细节同上所述，在此不再赘述。
（6）在硅片正面沉积钝化膜，所述钝化膜优选为氮化硅膜。
（7）对硅片背面复合膜进行激光开槽。
采用激光开槽技术在硅片背面复合膜上开槽，开槽深度直至P型硅下表面。其中，激光波长为532nm，激光功率为14w以上，激光划线速度在12m/s以上，频率500KHZ以上；
优选的，激光波长为532nm，激光功率为14-20w，激光划线速度在12-20m/s，频率500KHZ以上。
随着氮化硅沉积时间的缩短，氮化硅膜厚度变薄，影响背面复合膜层的氢钝化效果，会降低电池的光电转换效率，因此氮化硅沉积时间不能过短。另外，氮化硅膜越薄，对激光的吸收率越低，同时为了满足大规模生产的需求，激光划线速度必须保证在12m/s，激光功率保证在14w以上，因此激光的功率和频率必须达到一定的条件，才能使背面复合膜单位面积上吸收到较大的单位激光能量确保激光打开复合膜层，保证后续印刷的铝浆通过激光开槽区与基体硅接触。
（8）在硅片背面印刷背银主栅浆料，烘干。
根据背银主栅的图案印刷背银主栅浆料。所述背银主栅的图案为连续直栅；或所述背银主栅呈间隔分段设置；或所述背银主栅呈间隔分段设置，各相邻分段间通过连通线连接。
（9）在激光开槽区上印刷铝浆，使之与背银主栅浆料垂直连接。
（10）在硅片正面印刷正银电极浆料。
（11）对硅片进行高温烧结，形成背银主栅、铝栅线和正银电极。
（12）对硅片进行抗LID退火，制得管式PERC双面太阳能电池成品。
所述制备方法工艺简单，生产过程灵活可控，复合膜的组合顺序、厚度和膜的成分可以灵活调节，降低成本，产量大，且与目前生产线兼容性好。所述制备方法制得的管式PERC双面太阳能电池可双面吸收太阳光，光电转换效率高，外观良率和EL良率高，解决划伤和绕镀的问题。
如图9所示，本发明还公开一种管式PERC双面太阳能电池的专用设备，所述专用设备为管式PECVD设备，管式PECVD设备包括晶片装载区1、炉体2、特气柜3、真空系统4、控制系统5以及石墨舟6，所述特气柜3设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路以及用于通入笑气的第四气体管路，第一气体管路、第二气体管路、第三气体管路、第四气体管路设于特气柜3的内部，于图中未示出；
如图10和11所示，所述石墨舟6用于装卸硅片，所述石墨舟6包括卡点60，所述卡点60包括卡点轴61、卡点帽62和卡点底座63，所述卡点轴61安装在卡点底座63上，所述卡点帽62与卡点轴61连接，所述卡点轴61与卡点帽62、卡点底座63之间形成卡点槽64，所述卡点槽64的深度为0.5-1mm。
如图11所示，所述卡点槽64的深度为h，h优选为0.6-0.8mm，卡点底座63的直径为D，D优选为6-15mm，卡点帽62的斜面角度为α，α优选为35-45度，卡点帽62的厚度为a，a优选为1-1.3mm。
更佳的，所述卡点槽64的深度h为0.7mm，卡点底座63的直径D为9mm，卡点帽62的斜面角度α为40度，卡点帽62的厚度a为1.2mm。
需要说明的是，所述卡点槽的深度h是指卡点槽内侧的深度，主要是指卡点轴61与卡点底座63所成夹角的一侧的深度。卡点槽的深度h=（卡点底座直径-卡点轴直径）/2。卡点帽的斜面角度为α,是指卡点帽的斜面与竖直方向的夹角。
现有的卡点槽的深度h为1.75mm，卡点底座的直径D为9mm，卡点帽的斜面角度α为30度，卡点帽的厚度a为1mm。现有卡点槽的深度大，导致卡点处硅片与卡点底座的缝隙过大，从而绕镀到硅片背面的气体多，造成电池正面边缘的舟齿印比例很高。卡点帽的角度小、厚度小，导致自动插片机的调整空间小，划伤的比例不能有效降低。
对于管式PECVD做背膜沉积，划伤和绕镀是一对矛盾。通过调节自动插片机，让硅片在不接触石墨舟壁、硅片与石墨舟保持一定的距离的状态下插入卡点槽，避免硅片与石墨舟壁发生摩擦。如果硅片与石墨舟片的距离过大，划伤比例少，但是硅片就不容易贴紧舟壁，绕镀比例就会增加。如果距离太大，硅片有可能不能插入卡点槽，产生掉片的可能；如果硅片与石墨舟片的距离过小，硅片更贴紧石墨舟片，绕镀的比例小，划伤的比例就会增加。
电池正面边缘的舟齿印与PECVD背面镀膜的卡点相对应，是由于气流从卡点处绕镀到电池正面而形成。由于卡点底座的厚度略小于石墨舟片的厚度，导致卡点处的硅片与卡点底座之间存在缝隙，在镀背膜时，气流从卡点轴的下方两侧进入缝隙，使硅片的正面边缘形成膜层的沉积，即产生半圆形的舟齿印。
本发明通过调节卡点底座直径D和卡点轴直径的大小，减少卡点槽内侧的深度h，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低正面边缘舟齿印的比例。
通过调整自动插片机，当硅片插入石墨舟中一定的位置，吸盘释放真空，硅片掉入卡点帽的斜面α上，依靠重力，硅片从斜面滑落至贴紧石墨舟壁。这种无接触的插片方式，用来降低硅片的划伤比例。
本发明通过适当增加卡点帽斜面的角度α和卡点帽的厚度a，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，增加卡点帽的斜面角度减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
需要说明的是，现有技术中，对绕镀一般都是通过事后的补救来完成的，例如申请号：201510945459.3公开的PERC晶体硅太阳能电池生产中的碱抛光方法，在正面PECVD镀氮化硅膜工序后，利用带式传动方式刻蚀去除背表面及边缘绕镀氮化硅，解决了目前正面膜层绕镀导致背表面钝化效果不佳等问题。然而，本发明管式PERC电池是背面镀膜绕镀到正面，正面有PN结，如果采用以上专利的碱抛光方式，会破坏正面的PN结。本发明通过调整镀膜工艺和镀膜结构，使得在生产过程就可以避免绕镀的发生，从本质上解决了绕镀的问题。无需另外增加一道工序，简化加工过程，节省成本。本发明对于成本极其敏感的光伏太阳能行业，具有重要的意义。而且，本发明还解决了划伤的问题。
综上所述，实施本发明，具有如下有益效果：
首先，本发明管式PERC双面太阳能电池在电池背面设有多条平行设置的铝栅线，不仅替代现有单面太阳能电池中全铝背电场，实现背面吸光的功能，还用作背银电极中的副栅结构用于传导电子。制作本发明管式PERC双面太阳能电池，可节省银浆和铝浆的用量，降低生产成本，而且实现双面吸收光能，显著扩大太阳能电池的应用范围和提高光电转换效率。
其次，为了配合上述设有铝栅线的PERC双面太阳能电池，本发明采用管式PECVD设备在硅片背面沉积背面复合膜，所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种，且采用管式PECVD设备在硅片背面沉积而成，管式PERC设备采用直接等离子法，等离子直接对硅片表面进行轰击，膜层的钝化效果显著。所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述四条气体管路单独或组合作用，用于形成所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜。硅烷、氨气、三甲基铝、笑气四条气体管路可以通过采用不同的气体组合、不同的气体流量比，以及不同的沉积时间形成不同的膜层，对于氮化硅膜或氮氧化硅膜，通过调节气体流量比，可以得到不同成分比例和折射率的氮化硅膜或氮氧化硅膜。复合膜的组合顺序、厚度和膜的成分可以灵活调节，因此，本发明的生产过程灵活可控，降低成本，产量大。而且，通过优化背面复合膜，使其与背面的铝栅线相适配，产生最佳的钝化效果，大幅提升PERC电池的光电转换效率。
再次，本发明通过调节卡点轴直径和卡点底座直径的大小，减少卡点槽内侧的深度，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低电池正面边缘舟齿印的比例。而且，通过适当增加卡点帽斜面的角度和卡点帽的厚度，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，同时减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
进一步，由于氮化硅处于背面复合膜的外层，随着沉积时间的增加，硅片表面的膜层加厚，硅片发生弯曲，硅烷和氨气就会更容易绕镀到电池正面边缘。本发明设定氮化硅的沉积温度为390-410℃，时间为100-400s，通过缩短氮化硅沉积的时间和温度，可以降低硅片的弯曲度，减少绕镀的比例。氮化硅沉积的温度窗口很窄，为390-410℃，可以最大程度减少绕镀。但，当沉积温度低于390℃，绕镀的比例却上升。
同时为了满足大规模生产的需求，克服氮化硅沉积时间的缩短所带来负面影响，本发明将激光功率设置为14w以上，激光划线速度在12m/s以上，频率500KHZ以上，才能使背面复合膜单位面积上吸收到较大的单位激光能量，确保激光打开复合膜层，保证后续印刷的铝浆通过激光开槽区与基体硅接触。
综上，本发明管式PERC双面太阳能电池可双面吸收太阳光，光电转换效率高，外观良率和EL良率高，解决划伤和绕镀的问题。同时，本发明还提供制备上述电池的方法和专用设备，该方法工艺简单，可大规模量产，与目前生产线兼容性好。该专用设备结构简单，降低成本，产量大，成品率高。
最后所应当说明的是，以上实施例仅用以说明本发明的技术方案而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (8)

1.一种管式PERC双面太阳能电池，其特征在于，包括背银主栅、铝栅线、背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极；所述背面复合膜、P型硅、N型发射极、正面钝化膜和正银电极从下至上依次层叠连接；
所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜中的一种或多种，且采用管式PECVD设备在硅片背面沉积而成，所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述四条气体管路单独或组合作用，用于形成所述三氧化二铝膜、二氧化硅膜、氮氧化硅膜、氮化硅膜；所述管式PECVD设备装卸硅片的器具为石墨舟；所述背面复合膜再经过激光开槽后形成30-500个平行设置的激光开槽区，每个激光开槽区内设置至少1组激光开槽单元，所述铝栅线通过激光开槽区与P型硅相连；所述铝栅线与背银主栅垂直连接；
所述石墨舟的卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。
2.如权利要求1所述管式PERC双面太阳能电池，其特征在于，电池背面形成3-5个卡点印。
3.如权利要求1或2所述管式PERC双面太阳能电池，其特征在于，所述背面复合膜的底层为三氧化二铝膜，外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
4.如权利要求1或2所述管式PERC双面太阳能电池，其特征在于，所述背面复合膜的底层为二氧化硅膜，第二层为三氧化二铝膜，外层由二氧化硅膜、氮氧化硅膜和氮化硅膜的一种或多种组成。
5.如权利要求1所述管式PERC双面太阳能电池，其特征在于，所述三氧化二铝膜的厚度为5-15nm，所述氮化硅膜的厚度为50-150nm，所述氮氧化硅膜的厚度为5-20nm，所述二氧化硅膜的厚度为1-10nm。
6.一种如权利要求1-5任一项所述管式PERC双面太阳能电池的制备方法，其特征在于，包括：
(1)在硅片正面和背面形成绒面，所述硅片为P型硅；
(2)在硅片正面进行扩散，形成N型发射极；
(3)去除扩散过程形成的磷硅玻璃和周边PN结，并对硅片背面进行抛光,背刻蚀深度为3-6微米；
(4)对硅片进行退火，退火温度为600-820度，氮气流量为1-15L/min，氧气流量为0.1-6L/min；
(5)采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w；
所述管式PECVD设备设有硅烷、氨气、三甲基铝、笑气四条气体管路，所述管式PECVD设备装卸硅片的器具为石墨舟，石墨舟的卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm；
(6)在硅片正面沉积钝化膜；
(7)对硅片背面复合膜上进行激光开槽；
其中，激光波长为532nm，激光功率为14w以上，激光划线速度在12m/s以上，频率500KHZ以上；
(8)在硅片背面印刷背银主栅浆料，烘干；
(9)在激光开槽区上印刷铝浆，使之与背银主栅浆料垂直连接；
(10)在硅片正面印刷正银电极浆料；
(11)对硅片进行高温烧结，形成背银主栅、铝栅线和正银电极；
(12)对硅片进行抗LID退火，制得管式PERC双面太阳能电池成品。
7.如权利要求6所述的制备方法，其特征在于，采用管式PECVD设备在硅片背面沉积背面复合膜，包括：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，三氧化二铝膜的沉积温度为250-300℃，时间为50-300s，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，氮氧化硅膜的沉积温度为350-410℃，时间为50-200s，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅膜的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
8.一种制备权利要求1-5任一项所述管式PERC双面太阳能电池的专用设备，所述专用设备为管式PECVD设备，其特征在于，管式PECVD设备包括晶片装载区、炉体、特气柜、真空系统、控制系统以及石墨舟，所述特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路以及用于通入笑气的第四气体管路；所述石墨舟用于装卸硅片，所述石墨舟包括卡点，所述卡点包括卡点轴、卡点帽和卡点底座，所述卡点轴安装在卡点底座上，所述卡点帽与卡点轴连接，所述卡点轴与卡点帽、卡点底座之间形成卡点槽，所述卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。
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