US20200058817A1 - Bifacial tube-type perc solar cell, preparation method thereof, and production device therefor - Google Patents

Bifacial tube-type perc solar cell, preparation method thereof, and production device therefor Download PDF

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Publication number
US20200058817A1
US20200058817A1 US16/345,751 US201716345751A US2020058817A1 US 20200058817 A1 US20200058817 A1 US 20200058817A1 US 201716345751 A US201716345751 A US 201716345751A US 2020058817 A1 US2020058817 A1 US 2020058817A1
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Prior art keywords
film
silicon
rear surface
silicon wafer
pin
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US16/345,751
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English (en)
Inventor
Jiebin Fang
Kang-Cheng Lin
Chun-Wen Lai
Nailin He
Wenjie YIN
Ta-Neng Ho
Gang Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Original Assignee
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Application filed by Zhejiang Aiko Solar Energy Technology Co Ltd, Guangdong Aiko Solar Energy Technology Co Ltd filed Critical Zhejiang Aiko Solar Energy Technology Co Ltd
Assigned to GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD. reassignment GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, GANG, FANG, Jiebin, HE, Nailin, HO, TA-NENG, LAI, CHUN-WEN, LIN, KANG-CHENG, YIN, Wenjie
Publication of US20200058817A1 publication Critical patent/US20200058817A1/en
Abandoned legal-status Critical Current

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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/50—Photovoltaic [PV] energy
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention employs tubular PECVD technology to deposit a composite film on the rear surface of a silicon wafer in order to produce a bifacial high-efficiency PERC solar cell. Due to the fact that tubular PECVD technology adopts a direct plasma method and could flexibly adjust the composition and combination of layers in a composite membrane, the passivation effect of the film is good; the photoelectric conversion efficiency of the PERC solar cell can be significantly improved.
  • the excellent passivation ability and process flexibility of tubular PECVD technology allow the thickness of an aluminum oxide film to be reduced, thus reducing the consumption of TMA.
  • tubular PERC technology can be easily maintained and has a high uptime. In view of the above, employing tubular PECVD technology to produce high-efficiency PERC cells has a significant overall cost advantage over employing plate PECVD technology.
  • the rear surface composite film forms 30-500 parallel-arranged laser grooving regions by laser grooving; each laser grooving region includes at least 1 set of laser grooving unit; the rear aluminum grid line is connected to the P-type silicon via the laser grooving regions; the rear aluminum grid line is perpendicularly connected to the rear silver major grid line.
  • depositing the rear surface composite film on the rear surface of the silicon wafer includes the following:
  • the present invention also provides a production device for the bifacial tube-type PERC solar cell, the device is the tubular PECVD device, which includes a silicon wafer loading area, a furnace body, a gas cabinet, a vacuum system, a control system, and a graphite boat; the gas cabinet is provided with a first gas line for silane, a second gas line for ammonia, a third gas line for trimethylaluminum, and a fourth gas line for nitrous oxide;
  • silicon nitride is the outer layer of the rear surface composite film; as the deposition time increases, the thickness of the film increases, which causes silicon wafer to bend.
  • the silicon nitride deposition temperature is limited to 390-410° C.
  • the deposition time is limited to 100-400s.
  • FIG. 8 is a schematic diagram of the sixth embodiment of the rear surface composite film of FIG. 1 .
  • the rear silver major grid line 1 of the present invention could also be arranged in spaced segments. The adjacent segments are connected by a connecting line. There are 2-8 rear silver major grid lines 1 , each with a width of 0.5-5 mm.
  • the tubular PECVD device is provided with four gas lines of silane, ammonia, trimethyl aluminum, and nitrous oxide; the four gas lines are used alone or in combination to form the aluminum oxide film, the silicon dioxide film, the silicon oxynitride film, and the silicon nitride film.
  • the ratio of the gas flow it is possible to obtain a silicon oxynitride film or a silicon nitride film having different composition ratios and refractive indexes.
  • the order of formation and the thickness of the aluminum oxide film, the silicon dioxide film, the silicon oxynitride film, and the silicon nitride film are adjustable; the composition and refractive index of the silicon oxynitride film and the silicon nitride film are adjustable.
  • the present invention adequately increases the angle of inclination of the inclined surface of the pin cap and the thickness of the pin cap, and adjusts the automatic wafer inserter, thereby slightly increasing the distance between the silicon wafer and the graphite boat wall, reducing scratching.
  • Increasing the angle of inclination of the inclined surface of the pin cap also reduces the impact force on the silicon wafer from the graphite boat when the silicon wafer is sliding down the inclined surface, reducing breakage rate.
  • a tubular PECVD device including:
  • nitrous oxide Depositing a silicon dioxide film using nitrous oxide.
  • the flow rate of nitrous oxide is 0.1-5 slm; the plasma power is 2000-5000 W.
  • the large distance between the silicon wafer and the graphite boat wall may prevent the silicon wafer from properly inserting into the pin slot, and the silicon wafer may fall off as a result. If the distance between the silicon wafer and the graphite boat plate were too small, the silicon wafer would be closely attached to the graphite boat plate. As a result, undesirable coating would be less likely to take place, but the possibility of scratching would increase.
  • the present invention maintains a laser power of above 14W, a laser scribing speed of above 12 m/s, and a frequency of above 500 kHZ. This allows the absorption of a sufficiently large amount of laser energy in per unit area of the rear surface composite film to effectively groove the composite film; as a result, the aluminum paste subsequently printed is in contact with the silicon substrate through the laser grooving regions.

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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
US16/345,751 2017-05-18 2017-05-25 Bifacial tube-type perc solar cell, preparation method thereof, and production device therefor Abandoned US20200058817A1 (en)

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PCT/CN2017/086030 WO2018209729A1 (zh) 2017-05-18 2017-05-25 管式perc双面太阳能电池及其制备方法和专用设备

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