CN112071953A - 一种板式设备制备钝化接触太阳能电池的方法及装置 - Google Patents

一种板式设备制备钝化接触太阳能电池的方法及装置 Download PDF

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CN112071953A
CN112071953A CN202010916495.8A CN202010916495A CN112071953A CN 112071953 A CN112071953 A CN 112071953A CN 202010916495 A CN202010916495 A CN 202010916495A CN 112071953 A CN112071953 A CN 112071953A
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silicon substrate
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preparing
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杜哲仁
陆俊宇
陈嘉
季根华
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Jiangsu Jietai Photoelectric Technology Co ltd
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Abstract

本发明提供的一种板式设备制备钝化接触结构太阳能电池的方法，包括如下步骤：S1.选取晶体硅基体；S2.在板式一体式连续镀膜设备中，晶体硅基体首先进入ALD工艺腔沉积隧穿氧化层，之后进入PECVD工艺腔连续沉积掺杂非晶硅层；S3.将晶体硅基体退火形成掺杂多晶硅层；S4.在掺杂多晶硅层表面制备氮化硅减反层，并在另一面制备氧化铝钝化层及氮化硅减反层；S5.在晶体硅基体正反两面通过丝网印刷的方式制备金属导电电极。本发明采用板式传输，可在一套设备中连续制备隧穿氧化层及掺杂非晶硅层，减少工序；且ALD及PECVD工艺温度低，可减少硅片弯曲带来的不良；PECVD工艺无绕镀，减少后期清洗步骤，并可实现原位掺杂以减少后续单独的磷掺杂工序。

Description

一种板式设备制备钝化接触太阳能电池的方法及装置
技术领域
本发明涉及太阳能光伏电池技术领域，具体涉及一种板式设备制备钝化接触太阳能电池的方法及装置。
背景技术
随着光伏行业的不断发展，市场竞争越来越激烈，提高电池转换效率、降低产品度电成本是行业永远不变的前进方向。表面的复合是影响太阳能电池效率的重大因素，对晶体硅表面进行钝化处理，降低表面复合速率可以有效提升电池的转换效率。隧穿氧化层钝化接触技术(TOPCon)是目前行业里比较前沿及热门的降低表面复合速率的技术：在硅片表面先沉积一层隧穿氧化层，然后再覆盖一层掺杂的多晶硅层，从而形成隧穿氧化层钝化接触结构。这种结构在电极与基底之间形成隧穿薄膜，隔绝金属电极与基底接触，减少接触复合损失，因此电池的开路电压可以做到很高，并且电子能隧穿薄膜不会影响电流传递。
目前工业化生产中制备该隧穿钝化接触结构通常采用的方法为：1、先用热氧化生长氧化层；2、再通过LPCVD法（低压化学气相沉积）沉积本征的非晶硅层；3、最后再通过离子注入或者扩散的方法，形成掺杂的多晶硅层。
这种方式有如下缺点：
1、需要3台设备分别单独完成上述3道工序；虽然热氧化生长氧化层和CVD沉积非晶硅层可以在同一个管式炉里实现，但由于工艺温度不一致，需要花费更长的升温、降温等待时间，导致产能偏低；
2、第3步掺杂，如果采用离子注入的方法，机台比较昂贵；如果采用磷扩散的方法需要使用掩模来实现单面掺杂，工序比较复杂；
3、热氧化跟CVD的方法工艺温度在550℃以上，高温会造成硅片弯曲度大，
说 明 书
影响产品良率，同时反应的气体会蔓延到衬底的背面发生反应并沉积成膜而形成绕镀，需增加去绕镀步骤，增加成本。
发明内容
为解决上述技术问题，本发明通过引入新的多晶硅制备工艺，通过ALD（原子层沉积）及PECVD（等离子体增强化学）的方法分别连续制备隧穿氧化层及掺杂的非晶硅薄膜，再通过退火形成最终的掺杂多晶硅层。
首先，本发明提供了一种板式设备制备钝化接触结构的方法，包括如下步骤：
S1.选取N型晶体硅基体或P型晶体硅基体；
S2.将步骤S1的晶体硅基体放入包括ALD工艺腔及PECVD工艺腔的板式一体式连续镀膜设备，晶体硅基体首先进入ALD工艺腔沉积隧穿氧化层，之后进入PECVD工艺腔连续沉积掺杂非晶硅层；
S3.将步骤S2沉积掺杂非晶硅层的晶体硅基体进行退火，退火后的掺杂非晶硅层晶化形成掺杂多晶硅层。
其中，步骤S1中，对晶体硅基体进行预处理并在表面形成制绒面或抛光面。
其中，步骤S1中，在晶体硅基体表面进行硼扩散或磷扩散并清洗去除杂质。
其中，步骤S2中，晶体硅基体在ALD工艺腔中加热到工艺温度，并在ALD工艺腔中通入工艺气体，通过原子层沉积方式生成隧穿氧化层，其厚度为0.5~3nm；工艺气体为水蒸气及臭氧的任一种或两种气体的混合气体。
其中，步骤S2中，晶体硅基体在PECVD工艺腔中加热到工艺温度，并在PECVD工艺腔中通入至少包含硅烷以及一种掺杂源的混合气体，通过等离子激发在隧穿氧化层表面沉积掺杂非晶硅层。
其中，步骤S2中，晶体硅基体平铺放置在载板上，通过载板在不同腔体间进行水平传输实现板式连续镀膜。
其中，步骤S3中，退火时，向工艺腔内通入氮气作为保护气体，退火温度
说 明 书
860~950℃，退火时间15~60 min。
本发明还提供了一种板式设备制备钝化接触结构太阳能电池的方法，其基于上述一种板式设备制备钝化接触结构的方法，还包括如下步骤：
S4.在经过步骤S3形成的掺杂多晶硅层表面制备氮化硅减反层，并在晶体硅基体的另一面制备氧化铝钝化层，并在氧化铝钝化层表面制备氮化硅减反层；
S5.在晶体硅基体正反两面通过丝网印刷的方式制备金属导电电极，从而形成具有钝化接触结构的太阳能电池。
其中，步骤S5中，在进行丝网印刷之前，在晶体硅基体的正反两面进行开槽处理以预留出金属导电电极印刷位置。
本发明还提供了一种具有钝化接触结构的太阳能电池，其上述一种板式设备制备钝化接触结构太阳能电池的方法制备而成。
本发明还提供了一种钝化接触结构太阳能电池的板式一体式连续镀膜装置，其包括一体式连续真空设置的ALD工艺腔及PECVD工艺腔，晶体硅基体平铺在载板上并依次通过ALD工艺腔及PECVD工艺腔完成镀膜。
其中，所述ALD工艺腔的进料端还设置有加热腔，所述加热腔的进料端设置有自动上料机构；所述PECVD工艺腔的出料端设置有冷却腔，所述冷却腔的出料端设置有自动下料机构。
其中，所述载板呈平板型，所述载板的表面具有开孔以承载晶体硅基体，其材质为石英或碳化硅。
通过上述技术方案，本发明具有如下有益效果：
1、ALD（原子层沉积）及PECVD（等离子体化学气相沉积）方法工艺温度低，可减少由片子弯曲带来的不良；
2、PECVD方法制备的多晶硅具有单面性，无绕镀，减少后期清洗步骤；
3、PECVD的方式可实现原位掺杂，可减少后续单独的磷掺杂工序；
4、可根据工艺要求调试所需的掺杂配比，获得更好的钝化效果；
5、采用平板式传输，可在一套设备中连续制备隧穿氧化层及掺杂的非晶硅
说 明 书
薄膜，减少工序。
附图说明
图1-1为实施例1中N型晶体硅基体示意图；
图1-2为实施例1中N型晶体硅基体制绒后示意图；
图1-3为实施例1中N型晶体硅基体表面硼扩散后示意图；
图1-4为实施例1中N型晶体硅基体表面一体式连续沉积隧穿氧化层及磷掺杂多晶硅层后示意图；
图1-5为实施例1中N型晶体硅基体表面沉积氮化硅减反层一后示意图；
图1-6为实施例1中N型晶体硅基体表面沉积氧化铝钝化层后示意图；
图1-7为实施例1中N型晶体硅基体表面沉积氮化硅减反层二后示意图；
图1-8为实施例1中N型钝化接触结构太阳能电池结构示意图；
图2-1为实施例2中P型晶体硅基体示意图；
图2-2为实施例2中P型晶体硅基体制绒后示意图；
图2-3为实施例2中P型晶体硅基体表面磷扩散后示意图；
图2-4为实施例2中P型晶体硅基体表面一体式连续沉积隧穿氧化层及磷掺杂多晶硅层后示意图；
图2-5为实施例2中P型晶体硅基体表面沉积氧化铝钝化层后后示意图；
图2-6为实施例2中P型晶体硅基体双面沉积氮化硅减反层后示意图；
图2-7为实施例2中P型晶体硅基体表面激光开槽后示意图；
图2-8为实施例2中P型钝化接触结构太阳能电池结构示意图；
图3为本发明实施例中的载板结构示意图；
图4-1为本发明实施例中载板的一种开孔结构示意图；
图4-2为本发明实施例中载板的另一种开孔结构示意图。
图中数字表示：10.N型晶体硅基体；11.硼扩散层；12.隧穿氧化层；13.磷掺杂多晶硅层；14.氮化硅减反层一；15.氧化铝钝化层；16.氮化硅减反层二；
说 明 书
17.金属导电电极；20.P型晶体硅基体；21.磷扩散层；22.隧穿氧化层；23.磷掺杂多晶硅层；24.氧化铝钝化层；25.氮化硅减反层一；26.氮化硅减反层二；27.开槽；28.金属导电电极；30.载板；31.开孔一；32.开孔二。
具体实施方式
下面结合实例对本发明进行详细的说明。
具体实施例仅仅是对本发明的解释，并不是对本发明的限制，本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改，但只要在本发明的权利要求范围内都受到保护。
实施例1：
本实施例1以N型钝化接触结构电池的制备为例，其包括如下步骤：
S1.选取图1-1所示的N型晶体硅基体10，其电阻率为0.3~5Ω•cm，厚度为80~200μm，然后在N型晶体硅基体10的表面进行碱制绒以获得图1-2所示的双面制绒结构，并在N型晶体硅基体10的正面制绒面表面采用BBr3气态源扩散形成图1-3所示的具有硼扩散层11的N型晶体硅基体10并形成PN结，其方阻为80~200Ω/□，然后通过清洗去除表面的硼硅玻璃（BSG）杂质；
S2. 在经过步骤S1预处理后的N型晶体硅基体10平铺在图3所示的4×4规格载板30上并输送至包括一体式连续真空设置的ALD工艺腔及PECVD工艺腔的板式一体式连续镀膜装置中，N型晶体硅基体10平铺在载板30上并依次通过ALD工艺腔及PECVD工艺腔完成镀膜，载板30上的开孔可以是镂空并且边缘具有边托板的开孔一31或非镂空且具有底托板的开孔二32，开孔一31及开孔二32分别如图4-1及4-2所示；其中，N型晶体硅基体10平铺在载板30上首先经过磷扩散处理的一侧表面在ALD工艺腔中采用原子层沉积方法沉积连续制备如图1-4所示的隧穿氧化层12，反应气体为水蒸气，隧穿氧化层12的厚度为0.5~3nm；然后，N型晶体硅基体10平铺在载板30上并进入PECVD工艺腔中，通入磷烷、硅烷并加热到300~450℃，通过等离子激发的方式生长
说 明 书
磷掺杂非晶硅层；
S3.将步骤S2沉积掺杂非晶硅层的N型晶体硅基体10进行退火，退火时，向工艺腔内通入氮气作为保护气体，退火温度860~950℃，退火时间15~60 min，退火后的掺杂非晶硅层晶化形成磷掺杂多晶硅层13，如图1-4所示；
S4.在经过步骤S3形成的掺杂多晶硅层表面制备如图1-5所示的氮化硅减反层一14，并在N型晶体硅基体10的另一面制备如图1-6所示的氧化铝钝化层15，在氧化铝钝化层表面制备如图1-7所示的氮化硅减反层二16；
S5.在N型晶体硅基体10正反两面通过丝网印刷的方式制备金属导电电极17，从而形成具有钝化接触结构的太阳能电池，如图1-8所示。
实施例2：
本实施例2以P型钝化接触结构的PERC电池制备为例，其包括如下步骤：
S1.选取图2-1所示的P型晶体硅基体20，其电阻率为0.1~5Ω•cm，厚度为80~200μm，然后在P型晶体硅基体20的表面进行碱制绒以获得图2-2所示的双面制绒结构，并在一侧制绒面表面采用POCl3气态源扩散形成图2-3所示的具有磷扩散层21的P型晶体硅基体20并形成PN结，其方阻为40-200Ω/□，然后通过清洗去除表面的磷硅玻璃（PSG）杂质；
S2.在经过步骤S1预处理后的P型晶体硅基体20平铺在图3所示的4×4规格载板30上并输送至包括一体式连续真空设置的ALD工艺腔及PECVD工艺腔的板式一体式连续镀膜装置中，P型晶体硅基体20平铺在载板30上并依次通过ALD工艺腔及PECVD工艺腔完成镀膜，载板30上的开孔可以是镂空并且边缘具有边托板的开孔一31或非镂空且具有底托板的开孔二32，开孔一31及开孔二32分别如图4-1及4-2所示；其中，P型晶体硅基体20平铺在载板30上首先经过磷扩散处理的一侧表面在ALD工艺腔中采用原子层沉积方法沉积连续制备如图2-4所示的隧穿氧化层22，反应气体为水蒸气，隧穿氧化层22的厚度为0.5~3nm；然后，P型晶体硅基体20平铺在载板30上并进入PECVD工艺腔中，通入磷烷、硅烷并加热到300~450℃，通过等离子激发的方式生长
说 明 书
磷掺杂非晶硅层；
S3.将步骤S2沉积掺杂非晶硅层的P型晶体硅基体20进行退火，退火时，向工艺腔内通入氮气作为保护气体，退火温度860~950℃，退火时间15~60 min，退火后的掺杂非晶硅层晶化形成磷掺杂多晶硅层23，如图2-4所示；
S4.在经过步骤S3后为沉积掺杂多晶硅层的P型晶体硅基体20表面制备如图2-5所示的氧化铝钝化层24；在制备的晶体硅基体的正反面分别制备如图2-6所示的氮化硅减反层一25及氮化硅减反层二26；
S5.在P型晶体硅基体20的非掺杂面进行激光开槽27处理以预留出图2-7所示的金属导电电极印刷位置，然后在P型晶体硅基体20的正反两面通过丝网印刷的方式制备金属导电电极28，从而形成具有钝化接触结构的太阳能电池，如图2-8所示。
最后应当说明的是，以上实施例仅用以说明本发明的技术方案，而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细地说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (13)

1.一种板式设备制备钝化接触结构的方法，其特征在于，包括如下步骤：
S1.选取N型晶体硅基体或P型晶体硅基体；
S2.将步骤S1的晶体硅基体放入包括ALD工艺腔及PECVD工艺腔的板式一体式连续镀膜设备，晶体硅基体首先进入ALD工艺腔沉积隧穿氧化层，之后进入PECVD工艺腔连续沉积掺杂非晶硅层；
S3.将步骤S2沉积掺杂非晶硅层的晶体硅基体进行退火，退火后的掺杂非晶硅层晶化形成掺杂多晶硅层。
2.根据权利要求1所述的一种板式设备制备钝化接触结构的方法，其特征在于，步骤S1中，对晶体硅基体进行预处理并在表面形成制绒面或抛光面。
3.根据权利要求1所述的一种板式设备制备钝化接触结构的方法，其特征在于，步骤S1中，在晶体硅基体表面进行硼扩散或磷扩散并清洗去除杂质。
4.根据权利要求1所述的一种板式设备制备钝化接触结构的方法，其特征在于，步骤S2中，晶体硅基体在ALD工艺腔中加热到工艺温度，并在ALD工艺腔中通入工艺气体，通过原子层沉积方式生成隧穿氧化层，其厚度为0.5~3nm；工艺气体为水蒸气及臭氧的任一种或两种气体的混合气体。
5.根据权利要求1所述的一种板式设备制备钝化接触结构的方法，其特征在于，步骤S2中，晶体硅基体在PECVD工艺腔中加热到工艺温度，并在PECVD工艺腔中通入至少包含硅烷以及一种掺杂源的混合气体，通过等离子激发在隧穿氧化层表面沉积掺杂非晶硅层。
6.根据权利要求1所述的一种板式设备制备钝化接触结构的方法，其特征在于，步骤S2中，晶体硅基体平铺放置在载板上，通过载板在不同腔体间进行水平传输实现板式连续镀膜。
7.根据权利要求1所述的一种板式设备制备钝化接触结构的方法，其特征在于，步骤S3中，退火时，向工艺腔内通入氮气作为保护气体，退火温度860~950℃，退火时间15~60 min。
8.一种板式设备制备钝化接触结构太阳能电池的方法，基于权利要求1-7
权 利 要 求 书
任一项制备的钝化接触结构，其特征在于，还包括如下步骤：
S4.在经过步骤S3形成的掺杂多晶硅层表面制备氮化硅减反层，并在晶体硅基体的另一面制备氧化铝钝化层，并在氧化铝钝化层表面制备氮化硅减反层；
S5.在晶体硅基体正反两面通过丝网印刷的方式制备金属导电电极，从而形成具有钝化接触结构的太阳能电池。
9.根据权利要求8所述的一种板式设备制备钝化接触结构太阳能电池的方法，其特征在于，步骤S5中，在进行丝网印刷之前，在晶体硅基体的正反两面进行开槽处理以预留出金属导电电极印刷位置。
10.一种具有钝化接触结构的太阳能电池，其特征在于，基于权利要求8的一种板式设备制备钝化接触结构太阳能电池的方法制备而成。
11.一种钝化接触结构太阳能电池的板式一体式连续镀膜装置，其特征在于，包括一体式连续真空设置的ALD工艺腔及PECVD工艺腔，晶体硅基体平铺在载板上并依次通过ALD工艺腔及PECVD工艺腔完成镀膜。
12.根据权利要求11所述的一种钝化接触结构太阳能电池的板式一体式连续镀膜装置，其特征在于，所述ALD工艺腔的进料端还设置有加热腔，所述加热腔的进料端设置有自动上料机构；所述PECVD工艺腔的出料端设置有冷却腔，所述冷却腔的出料端设置有自动下料机构。
13.根据权利要求11所述的一种钝化接触结构太阳能电池的板式一体式连续镀膜装置，其特征在于，所述载板呈平板型，所述载板的表面具有开孔以承载晶体硅基体，其材质为石英或碳化硅。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112736159A (zh) * 2020-12-31 2021-04-30 三江学院 一种选择性多晶硅厚度与掺杂浓度电池结构的制备方法
CN117936652A (zh) * 2024-03-14 2024-04-26 金阳(泉州)新能源科技有限公司 一种背膜连镀的背接触电池的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112736159A (zh) * 2020-12-31 2021-04-30 三江学院 一种选择性多晶硅厚度与掺杂浓度电池结构的制备方法
CN117936652A (zh) * 2024-03-14 2024-04-26 金阳(泉州)新能源科技有限公司 一种背膜连镀的背接触电池的制备方法

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