CN112071954A - 一种钝化接触结构及其太阳能电池的制备方法 - Google Patents

一种钝化接触结构及其太阳能电池的制备方法 Download PDF

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CN112071954A
CN112071954A CN202010920630.6A CN202010920630A CN112071954A CN 112071954 A CN112071954 A CN 112071954A CN 202010920630 A CN202010920630 A CN 202010920630A CN 112071954 A CN112071954 A CN 112071954A
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silicon substrate
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crystalline silicon
contact structure
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杜哲仁
陆俊宇
陈嘉
季根华
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Jiangsu Jietai Photoelectric Technology Co ltd
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Abstract

一种钝化接触结构太阳能电池的制备方法，包括如下步骤：S1.对晶体硅基体进行预处理；S2.在晶体硅基体表面生长一层隧穿氧化层；S3.在PECVD工艺腔内，在隧穿氧化层表面沉积掺杂非晶硅层；S4.将晶体硅基体进行退火，使掺杂非晶硅层晶化形成掺杂多晶硅层；S5.在掺杂多晶硅层表面制备氮化硅减反层，并在另一面制备氧化铝钝化层；S6.在氧化铝钝化层表面制备氮化硅减反层；S7.在晶体硅基体正反两面通过丝网印刷的方式制备金属导电电极，以形成钝化接触结构的太阳能电池。本发明采用PECVD方法制备掺杂非晶硅层的工艺温度低，可减少由硅片弯曲带来的不良，且工艺具有单面性，绕镀轻微，可以减少后期清洗步骤；可实现原位掺杂，减少后续磷掺杂或硼掺杂工序。

Description

一种钝化接触结构及其太阳能电池的制备方法
技术领域
本发明涉及太阳能电池技术领域，具体涉及一种钝化接触结构及其太阳能电池的制备方法。
背景技术
随着光伏行业的不断发展，市场竞争越来越激烈，提高电池转换效率、降低产品度电成本是行业永远不变的前进方向。表面的复合是影响太阳能电池效率的重大因素，对晶体硅表面进行钝化处理，降低表面复合速率可以有效提升电池的转换效率。隧穿氧化层钝化接触技术(TOPCon)是目前行业里比较前沿及热门的降低表面复合速率的技术：其核心技术是在硅片表面先沉积一层隧穿氧化层，然后再覆盖一层掺杂的多晶硅层，从而形成隧穿氧化层钝化接触结构。这种结构在电极与基底之间形成隧穿薄膜，隔绝金属电极与基底接触，减少接触复合损失，因此电池的开路电压可以做到很高，并且电子能隧穿薄膜不会影响电流传递。
目前工业化生产中制备该隧穿钝化接触结构通常采用的方法为：1、先用热氧化生长氧化层，2、再通过LPCVD法(低压化学气相沉积)沉积本征的非晶硅层，3、最后再通过离子注入或者扩散的方法，形成掺杂的多晶硅层。
上述方式有如下缺点：
1、需要单独的掺杂步骤，工序相对复杂；另外，如果采用离子注入的方法，机台比较昂贵，如果采用磷扩散的方法则需要使用掩模来实现单面掺杂，工序更加复杂；
2、热氧化跟CVD的方法工艺温度在550℃以上，高温会造成硅片弯曲度大，影响产品良率，同时反应的气体会蔓延到衬底的背面发生反应并沉积成膜，形成绕镀，需增加去绕镀步骤，增加成本；而LPCVD的方法工艺温度在550℃以上，高温会造成片子弯曲度大，影响产品良率，同时反应的气体会蔓延到衬底的背面，发生反应并沉积成膜，形成绕镀，后续需增加去清洗绕镀步骤，增加成本。
发明内容
为解决上述技术问题，本发明首先提供了一种钝化接触结构的制备方法，包括如下步骤：
S1.选取晶体硅基体，对晶体硅基体进行预处理；
S2.在经过步骤S1预处理后的晶体硅基体表面生长一层隧穿氧化层；
S3.将步骤S2生长隧穿氧化层后的晶体硅基体放入PECVD工艺腔内，在隧穿氧化层表面沉积掺杂非晶硅层；
S4.将步骤S3沉积掺杂非晶硅层的晶体硅基体进行退火，退火后的掺杂非晶硅层晶化形成掺杂多晶硅层。
其中，步骤S1中，对晶体硅基体进行预处理后在表面形成制绒面或抛光面。
其中，步骤S1中，在经过制绒或抛光预处理后的晶体硅基体表面进行硼扩散或磷扩散并清洗去除杂质。
其中，步骤S2中，隧穿氧化层的制备方法为硝酸氧化法、高温热氧化法、臭氧氧化法或原子层沉积法，隧穿氧化层的厚度为0.5～3nm。
其中，步骤S3中，晶体硅基体在PECVD工艺腔中加热到300～450℃，并通入至少包含硅烷以及一种掺杂源的混合气体，并通过等离子激发在隧穿氧化层表面沉积掺杂非晶硅层。
其中，步骤S4中，退火时，向工艺腔内通入氮气或氮氧混合气作为保护气体，退火温度860～950℃，退火时间15～120min。
基于上述钝化接触结构的制备方法，本发明还提供了一种钝化接触结构太阳能电池的制备方法，还包括如下步骤：
S5.在经过步骤S4形成的掺杂多晶硅层表面制备氮化硅减反层，并在晶体硅基体的另一面制备氧化铝钝化层；
S6.在步骤S5制备的氧化铝钝化层表面制备氮化硅减反层；
S7.在晶体硅基体正反两面通过丝网印刷的方式制备金属导电电极，从而形成具有钝化接触结构的太阳能电池。
其中，步骤S7中，在进行丝网印刷之前，在晶体硅基体的非掺杂面进行开槽处理以预留出金属导电电极印刷位置。
本发明还提供了一种具有钝化接触结构的太阳能电池，其基于上述一种钝化接触结构太阳能电池的制备方法制备而成。
通过上述技术方案，本发明具有如下优点：
1、PECVD方法制备掺杂非晶硅层的工艺温度低，可减少由硅片弯曲带来的不良；
2、PECVD工艺具有单面性，绕镀轻微，可以减少后期清洗步骤；
3、PECVD工艺可实现原位掺杂，可减少后续单独的磷掺杂或硼掺杂工序；
4、可根据工艺要求调试所需的掺杂配比，获得更好的钝化效果。
附图说明
图1-1为实施例1中N型晶体硅基体示意图；
图1-2为实施例1中N型晶体硅基体制绒后示意图；
图1-3为实施例1中N型晶体硅基体表面硼扩散后示意图；
图1-4为实施例1中N型晶体硅基体表面沉积隧穿氧化层后示意图；
图1-5为实施例1中N型晶体硅基体表面沉积磷掺杂多晶硅层后示意图；
图1-6为实施例1中N型晶体硅基体表面沉积氮化硅减反层一后示意图；
图1-7为实施例1中N型晶体硅基体表面沉积氧化铝钝化层后示意图；
图1-8为实施例1中N型晶体硅基体表面沉积氮化硅减反层二后示意图；
图1-9为实施例1中N型钝化接触结构太阳能电池结构示意图；
图2-1为实施例2中P型晶体硅基体示意图；
图2-2为实施例2中P型晶体硅基体制绒后示意图；
图2-3为实施例2中P型晶体硅基体表面磷扩散后示意图；
图2-4为实施例2中P型晶体硅基体表面沉积隧穿氧化层后示意图；
图2-5为实施例2中P型晶体硅基体表面沉积磷掺杂多晶硅层后示意图；
图2-6为实施例2中P型晶体硅基体表面沉积氧化铝钝化层后后示意图；
图2-7为实施例2中P型晶体硅基体双面沉积氮化硅减反层后示意图；
图2-8为实施例2中P型晶体硅基体表面激光开槽后示意图；
图2-9为实施例2中P型钝化接触结构太阳能电池结构示意图。
图中数字表示：10.N型晶体硅基体；11.硼扩散层；12.隧穿氧化层；13.磷掺杂多晶硅层；14.氮化硅减反层一；15.氧化铝钝化层；16.氮化硅减反层二；17.金属导电电极；20.P型晶体硅基体；21.磷扩散层；22.隧穿氧化层；23.磷掺杂多晶硅层；24.氧化铝钝化层；25.氮化硅减反层一；26.氮化硅减反层二；27.开槽；28.金属导电电极。
具体实施方式
下面结合实例对本发明进行详细的说明。
具体实施例仅仅是对本发明的解释，并不是对本发明的限制，本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改，但只要在本发明的权利要求范围内都受到保护。
实施例1：
本实施例1以N型钝化接触结构电池的制备为例，其包括如下步骤：
S1.选取图1-1所示的N型晶体硅基体10，其电阻率为0.3～5Ω·cm，厚度为80～200μm，然后在N型晶体硅基体10的表面进行碱制绒以获得图1-2所示的双面制绒结构，并在一侧制绒面表面采用BBr3气态源扩散形成图1-3所示的具有硼扩散层11的N型晶体硅基体10并形成PN结，其方阻为80～200Ω/□，然后通过清洗去除表面的硼硅玻璃(BSG)杂质；
S2.在经过步骤S1预处理后的N型晶体硅基体10未进行硼扩散处理的一侧表面在炉管中采用热氧化法生长一层隧穿氧化层12，如图1-4所示，隧穿氧化层12的厚度为0.5～3nm；
S3.将步骤S2生长隧穿氧化层12后的N型晶体硅基体10放入PECVD工艺腔内，并加热到300～450℃，然后通入磷烷及硅烷的混合气体并通过交流射频电源的等离子激发在隧穿氧化层表面沉积磷掺杂非晶硅层；
S4.将步骤S3沉积掺杂非晶硅层的N型晶体硅基体10进行退火，退火时，向工艺腔内通入氮气作为保护气体，退火温度860～950℃，退火时间15～120min，退火后的掺杂非晶硅层晶化形成磷掺杂多晶硅层13，如图1-5所示；
S5.在经过步骤S4形成的掺杂多晶硅层13表面制备如图1-6所示的氮化硅减反层一14，并在N型晶体硅基体10的另一面制备如图1-7所示的氧化铝钝化层15；
S6.在步骤S5制备的氧化铝钝化层表面制备如图1-8所示的氮化硅减反层二16；
S7.在N型晶体硅基体10正反两面通过丝网印刷的方式制备金属导电电极17，从而形成具有钝化接触结构的太阳能电池，如图1-9所示。
实施例2：
本实施例2以P型钝化接触结构的PERC电池制备为例，其包括如下步骤：
S1.选取图2-1所示的P型晶体硅基体20，其电阻率为0.1～5Ω·cm，厚度为80～200μm，然后在P型晶体硅基体20的表面进行碱制绒以获得图2-2所示的双面制绒结构，并在一侧制绒面表面采用POCl3气态源扩散形成图2-3所示的具有磷扩散层21的P型晶体硅基体20并形成PN结，其方阻为40-200Ω/□，然后通过清洗去除表面的磷硅玻璃(PSG)杂质；
S2.在经过步骤S1预处理后的P型晶体硅基体20经过磷扩散处理的一侧表面在炉管中采用热氧化法生长一层隧穿氧化层22，如图2-4所示，隧穿氧化层22的厚度为0.5～3nm；
S3.将步骤S2生长隧穿氧化层22后的P型晶体硅基体20放入PECVD工艺腔内，并加热到300～450℃，然后通入磷烷及硅烷的混合气体并通过交流射频电源的等离子激发在隧穿氧化层表面沉积磷掺杂非晶硅层；
S4.将步骤S3沉积掺杂非晶硅层的P型晶体硅基体20进行退火，退火时，向工艺腔内通入氮气作为保护气体，退火温度860～950℃，退火时间15～120min，退火后的掺杂非晶硅层晶化形成磷掺杂多晶硅层23，如图2-5所示；
S5.在经过步骤S4后为沉积掺杂多晶硅层23的P型晶体硅基体20表面制备如图2-6所示的氧化铝钝化层24；
S6.在步骤S5制备的晶体硅基体的正反面分别制备如图2-7所示的氮化硅减反层一25及氮化硅减反层二26；
S7.在P型晶体硅基体20的非掺杂面进行激光开槽27处理以预留出图2-8所示的金属导电电极印刷位置，然后在P型晶体硅基体20的正反两面通过丝网印刷的方式制备金属导电电极28，从而形成具有钝化接触结构的太阳能电池，如图2-9所示。
最后应当说明的是，以上实施例仅用以说明本发明的技术方案，而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细地说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (9)

1.一种钝化接触结构的制备方法，其特征在于，包括如下步骤：
S1.选取晶体硅基体，对晶体硅基体进行预处理；
S2.在经过步骤S1预处理后的晶体硅基体表面生长一层隧穿氧化层；
S3.将步骤S2生长隧穿氧化层后的晶体硅基体放入PECVD工艺腔内，在隧穿氧化层表面沉积掺杂非晶硅层；
S4.将步骤S3沉积掺杂非晶硅层的晶体硅基体进行退火，退火后的掺杂非晶硅层晶化形成掺杂多晶硅层。
2.根据权利要求1所述的一种钝化接触结构的制备方法，其特征在于，步骤S1中，对晶体硅基体进行预处理后在表面形成制绒面或抛光面。
3.根据权利要求2所述的一种钝化接触结构的制备方法，其特征在于，步骤S1中，在经过制绒或抛光预处理后的晶体硅基体表面进行硼扩散或磷扩散并清洗去除杂质。
4.根据权利要求1所述的一种钝化接触结构的制备方法，其特征在于，步骤S2中，隧穿氧化层的制备方法为硝酸氧化法、高温热氧化法、臭氧氧化法或原子层沉积法，隧穿氧化层的厚度为0.5～3nm。
5.根据权利要求1所述的一种钝化接触结构的制备方法，其特征在于，步骤S3中，晶体硅基体在PECVD工艺腔中加热到300～450℃，并通入至少包含硅烷以及一种掺杂源的混合气体，并通过等离子激发在隧穿氧化层表面沉积掺杂非晶硅层。
6.根据权利要求1所述的一种钝化接触结构的制备方法，其特征在于，步骤S4中，退火时，向工艺腔内通入保护气体，退火温度860～950℃，退火时间15～120min。
7.一种钝化接触结构太阳能电池的制备方法，其特征在于，基于权利要求1-6任一项制备的钝化接触结构，还包括如下步骤：
S5.在经过步骤S4形成的掺杂多晶硅层表面制备氮化硅减反层，并在晶体硅基体的另一面制备氧化铝钝化层；
S6.在步骤S5制备的氧化铝钝化层表面制备氮化硅减反层；
S7.在晶体硅基体正反两面通过丝网印刷的方式制备金属导电电极，从而形成具有钝化接触结构的太阳能电池。
8.根据权利要求7所述的一种钝化接触结构太阳能电池的制备方法，其特征在于，步骤S7中，在进行丝网印刷之前，在晶体硅基体的正反两面进行开槽处理以预留出金属导电电极印刷位置。
9.一种具有钝化接触结构的太阳能电池，其特征在于，基于权利要求7的一种钝化接触结构太阳能电池的制备方法制备而成。
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