CN106887478A - P型perc双面太阳能电池、组件和系统 - Google Patents
P型perc双面太阳能电池、组件和系统 Download PDFInfo
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- CN106887478A CN106887478A CN201710125140.5A CN201710125140A CN106887478A CN 106887478 A CN106887478 A CN 106887478A CN 201710125140 A CN201710125140 A CN 201710125140A CN 106887478 A CN106887478 A CN 106887478A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 83
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 83
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 83
- 229940037003 alum Drugs 0.000 claims abstract description 119
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 50
- 239000004411 aluminium Substances 0.000 claims abstract description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 230000011218 segmentation Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000009466 transformation Effects 0.000 abstract description 14
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 50
- 230000005684 electric field Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000005336 safety glass Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710125140.5A CN106887478B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池、组件和系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710125140.5A CN106887478B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池、组件和系统 |
Publications (2)
Publication Number | Publication Date |
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CN106887478A true CN106887478A (zh) | 2017-06-23 |
CN106887478B CN106887478B (zh) | 2019-07-19 |
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CN201710125140.5A Active CN106887478B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池、组件和系统 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108054221A (zh) * | 2017-12-18 | 2018-05-18 | 湖南红太阳光电科技有限公司 | 双面perc电池的背面栅线结构、双面perc电池及其制备方法 |
CN109301001A (zh) * | 2018-07-04 | 2019-02-01 | 横店集团东磁股份有限公司 | 一种perc电池背场激光开槽图形 |
CN109904246A (zh) * | 2019-03-22 | 2019-06-18 | 韩华新能源(启东)有限公司 | 一种适用于双面perc电池背面激光开槽的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203733811U (zh) * | 2014-01-06 | 2014-07-23 | 金坛正信光伏电子有限公司 | 一种具有与主栅线相互平行设置的副主栅线的电池片 |
US20140261666A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Methods of manufacturing a low cost solar cell device |
CN203983300U (zh) * | 2014-06-04 | 2014-12-03 | 浙江尖山光电股份有限公司 | 一种环形细栅多晶电池片 |
JP2015073065A (ja) * | 2013-10-02 | 2015-04-16 | 台湾茂▲し▼電子股▲ふん▼有限公司Mosel Vitelic Inc. | 太陽電池の製造方法 |
CN106057971A (zh) * | 2016-06-15 | 2016-10-26 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
CN106449877A (zh) * | 2016-10-17 | 2017-02-22 | 浙江晶科能源有限公司 | 一种perc电池的制备方法 |
-
2017
- 2017-03-03 CN CN201710125140.5A patent/CN106887478B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140261666A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Methods of manufacturing a low cost solar cell device |
JP2015073065A (ja) * | 2013-10-02 | 2015-04-16 | 台湾茂▲し▼電子股▲ふん▼有限公司Mosel Vitelic Inc. | 太陽電池の製造方法 |
CN203733811U (zh) * | 2014-01-06 | 2014-07-23 | 金坛正信光伏电子有限公司 | 一种具有与主栅线相互平行设置的副主栅线的电池片 |
CN203983300U (zh) * | 2014-06-04 | 2014-12-03 | 浙江尖山光电股份有限公司 | 一种环形细栅多晶电池片 |
CN106057971A (zh) * | 2016-06-15 | 2016-10-26 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
CN106449877A (zh) * | 2016-10-17 | 2017-02-22 | 浙江晶科能源有限公司 | 一种perc电池的制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108054221A (zh) * | 2017-12-18 | 2018-05-18 | 湖南红太阳光电科技有限公司 | 双面perc电池的背面栅线结构、双面perc电池及其制备方法 |
CN109301001A (zh) * | 2018-07-04 | 2019-02-01 | 横店集团东磁股份有限公司 | 一种perc电池背场激光开槽图形 |
CN109904246A (zh) * | 2019-03-22 | 2019-06-18 | 韩华新能源(启东)有限公司 | 一种适用于双面perc电池背面激光开槽的方法 |
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Publication number | Publication date |
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CN106887478B (zh) | 2019-07-19 |
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Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Applicant after: Guangdong Asahi Polytron Technologies Inc Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Applicant before: Guangdong Aiko Solar Energy Technology Co., Ltd. |
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CP03 | Change of name, title or address |
Address after: 528000 No.3, Qili Avenue South, Leping Town, Sanshui District, Foshan City, Guangdong Province Patentee after: Guangdong aixu Technology Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: Guangdong Aixu Technology Co.,Ltd. |
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CP03 | Change of name, title or address |