CN114023636A - 一种硼扩SE结构的高效N型TOPCon电池制作方法 - Google Patents
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 46
- 238000009792 diffusion process Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000007639 printing Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 230000005641 tunneling Effects 0.000 claims abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 238000002310 reflectometry Methods 0.000 claims description 6
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical group BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910015845 BBr3 Inorganic materials 0.000 claims description 2
- 229910015844 BCl3 Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及本发明提供了一种硼扩SE结构的高效N型TOPCon电池制作方法，具体包含S1、清洗制绒；S2、硼扩轻掺杂；S3、背面抛光；S4、生长隧穿氧化层+Poly‑si层或S4、生长隧穿氧化层；S5、生长原位磷掺杂薄层；S6、正面与四周去Poly绕镀及BSG；S7、印刷硼浆；S8、退火激活磷掺杂及形成硼扩SE结构；本发明的优点：在实现硼扩SE结构上工艺路线简单，与常规TOPCon工艺匹配性强，采用硼扩轻掺杂与丝网印刷硼浆重掺杂的相结合的制作方法，使得该电池正面结构使得非印刷区为轻掺高方阻，提高光线的短波响应，同时丝网印刷区为重掺低方阻，减少前金属电极的接触电阻，使得短路电流和填充因子都得到较好的改善，从而提高转换效率。
Description
技术领域
本发明属于太阳能电池技术领域，具体涉及一种硼扩SE结构的高效N型TOPCon电池制作方法。
背景技术
相对P型晶硅电池，N型晶硅电池的少子寿命高，无光致衰减，弱光效应好，温度系数小，是晶硅太阳能电池迈向理论最高效率的希望。TOPCon是一种基于选择性载流子原理的隧穿氧化层钝化接触(Tunnel Oxide Passivated Contact)太阳能电池技术，其电池结构为N型硅衬底电池，在电池背面制备一层超薄氧化硅，然后再沉积一层掺杂硅薄层，二者共同形成了钝化接触结构，有效降低表面复合和金属接触复合。但在Top Con电池正面金属诱导复合是太阳能组件中总复合损失的重要组成部分。在P型PERC电池中，通过缩小电池背面的金属接触面积，可有效降低金属化造成的复合损失。正面通过叠加激光SE可有效在金属栅线(电极)与硅片接触部位进行重掺杂，在电极之间位置进行轻掺杂。这样的结构可降低扩散层复合，由此可提高光线的短波响应，同时减少前金属电极与硅的接触电阻，使得短路电流、填充因子都得到较好的改善，从而提高转换效率。但在N型电池上由于硼原子较小则很难实现。
发明内容
本发明的目的在于提供一种硼扩SE结构的高效N型TOPCon电池制作方法，以解决上述背景技术中提出的问题。
为解决上述技术问题，本发明提供的技术方案为：一种硼扩SE结构的高效N型TOPCon电池制作方法，采用硼扩轻掺杂与丝网印刷硼浆重掺杂的相结合的制作方法，使得该电池正面结构使得非印刷区为轻掺高方阻，提高光线的短波响应，同时丝网印刷区为重掺低方阻，减少前金属电极的接触电阻，使得短路电流和填充因子都得到较好的改善，从而提高转换效率。
作为一种优选方案，所述N型硅片作为衬底材料，通过清洗制绒使硅片表面产生金字塔状表面结构，反射率不超过10％。
作为一种优选方案，所述硼扩轻掺杂区扩散方阻控制在120ohm/squ～160ohm/squ。
作为一种优选方案，所述背面抛光后反射率＞30％。
作为一种优选方案，所述隧穿氧化层厚度在1nm-2nm。
作为一种优选方案，激光开槽后硅片进行硼浆印刷并烘干，硼浆印刷图形与丝网印刷图形一致。
作为一种优选方案，硼浆印刷后硅片进行退火，退火温度在900℃-1000℃，时间保持在20min-60min。
作为一种优选方案，退火激活磷掺杂及形成硼扩SE结构，在重掺杂区域的方阻控制在70ohm/squ～90ohm/squ。
作为一种优选方案，硼扩轻掺杂硼源为BBr3/BCl3蒸汽。
本发明优点在于：实现硼扩SE结构上工艺路线简单，与常规TOPCon工艺匹配性强，采用硼扩轻掺杂与丝网印刷硼浆重掺杂的相结合的制作方法，使得该电池正面结构使得非印刷区为轻掺高方阻，提高光线的短波响应，同时丝网印刷区为重掺低方阻，减少前金属电极的接触电阻，使得短路电流和填充因子都得到较好的改善，从而提高转换效率。
附图说明
图1为本发明一种硼扩SE结构的高效N型TOPCon电池示意图；
图中数字表示：1、N型硅片基底；2、重掺杂层；3、轻掺杂层；4、印刷浆料；5、隧穿氧化层；6、掺杂晶硅层。
具体实施方式
下面用具体实施例说明本发明，并不是对本发明的限制。
一种硼扩SE结构的高效N型TOPCon电池制作方法，包括以下步骤：
1)对硅片进行清洗以及绒面的制作，使用溶液为双氧水，去离子水，添加剂以及氢氧化钠的混液，其中碱制绒氢氧化钠的质量浓度为2.5％，温度控制在82℃，制作出反射率在10％的金字塔绒面。
2)将清洗制绒后的硅片垂直或水平插入低压扩散炉的石英晶舟内，并进管进行硼扩轻掺杂；
S1:升温至扩散温度880℃并稳定3min后，通过抽空及检漏步骤；
S2:温度保持在扩散温度880℃，恒压通入氮气、氧气，氮气流量控制在2000sccm，氧气流量控制在500sccm，时间5min，在硅片表面制作一层薄层氧化硅；
S3:温度保持在扩散温度880℃，通入氮气、氧气和硼源对硅片表面进行沉积，将硼原子均匀分布在硅片表面，氮气流量在1300sccm，氧气在700sccm，硼源蒸汽在500sccm，时间控制在15min，将硼原子均匀分布在硅片表面；
S4:升温至推结温度940℃，并通入氮气稳压；
S5:温度保持在推结温度940℃，并恒温推进45min，形成生成浅结轻掺杂区；
S6:氮气氛围下缓慢降温出管，得到方阻监控范围在120～160ohm/squ；
3)将硅片置于2-10％的碱性溶液进行背面抛光，得到反射率大于30％的抛光面。
4)以LPCVD/原子沉积的方式对硅片背面进行隧穿氧化层生长。
5)采用PECVD的方式在背面生长原位磷掺杂晶硅薄层；
6)对硅片进行清洗，去除正面绕镀Poly-si及BSG层；
7)在硅片正面对应电极的激光开槽位置印刷硼浆，并在200℃下烘干3min；
8)将印刷硼浆后的硅片送入退火炉管，进行硼扩SE结构推进及背面磷掺杂退火；
S7:通过抽空及检漏步骤，在氮气、氧气氛围下，进行高温920℃恒压重掺杂推进及退火，氮气流量在2000sccm，氧气流量在500sccm，时间控制在30min；
S8:氮气氛围下缓慢降温出管，完成硼扩SE结构；
对比例：
对比例与实施例以表1的形式呈现：
表1
表2
| ITEM | Voc | Jsc | FF | EFF |
| 实施例 | 708.4 | 41.34 | 82.83 | 24.26 |
| 对比例 | 708.3 | 41.13 | 82.68 | 24.09 |
从表2的对比结果来看，本发明的新型N型电池硼扩SE结构，有更优的电性表现，电池正面结构使得非印刷区为轻掺高方阻，提高光线的短波响应，使得Isc增益明显，同时印刷区为重掺低方阻，减少前金属电极的接触电阻，使得短路电流、填充因子都得到较好的改善，从而提高转换效率。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，根据本发明的技术方案及其发明构思加以等同替换或改变，都应涵盖在本发明的保护范围之内。
Claims (9)
1.一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，采用硼扩轻掺杂与丝网印刷硼浆重掺杂的相结合的制作方法，使得该电池正面结构使得非印刷区为轻掺高方阻，提高光线的短波响应，同时丝网印刷区为重掺低方阻，减少前金属电极的接触电阻，使得短路电流和填充因子都得到较好的改善，从而提高转换效率。
2.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，所述N型硅片作为衬底材料，通过清洗制绒使硅片表面产生金字塔状表面结构，反射率不超过10％。
3.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，所述硼扩轻掺杂区扩散方阻控制在120ohm/squ～160ohm/squ。
4.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，所述背面抛光后反射率＞30％。
5.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，所述隧穿氧化层厚度在1nm-2nm。
6.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，激光开槽后硅片进行硼浆印刷并烘干，硼浆印刷图形与丝网印刷图形一致。
7.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，硼浆印刷后硅片进行退火，退火温度在900℃-1000℃，时间保持在20min-60min。
8.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于，退火激活磷掺杂及形成硼扩SE结构，在重掺杂区域的方阻控制在70ohm/squ～90ohm/squ。
9.根据权利要求1所述的一种硼扩SE结构的高效N型TOPCon电池制作方法，其特征在于：硼扩轻掺杂硼源为BBr3/BCl3蒸汽。
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| CN114883443A (zh) * | 2022-03-28 | 2022-08-09 | 普乐新能源科技(徐州)有限公司 | poly-Si绕镀去除方法及在TopCon电池制备的应用 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114883443A (zh) * | 2022-03-28 | 2022-08-09 | 普乐新能源科技(徐州)有限公司 | poly-Si绕镀去除方法及在TopCon电池制备的应用 |
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