CN111509072A - 新型n型背结设计的硅太阳电池及其制备方法 - Google Patents
新型n型背结设计的硅太阳电池及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种新型n型背结设计的硅太阳电池,包括衬底;衬底正面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、减反膜、前电极,形成n+前表面场;衬底背面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、全面金属背电极或具有通孔的减反膜/全面金属背电极,形成p+发射极。本发明的太阳电池采用背结设计,背面p+发射极采用p型钝化接触技术取代硼扩散技术,绕开了目前量产技术和装备仍不够成熟的硼扩散,有利于减少正面栅线数量,增加短路电流,采用全背金属电极或减反膜/全背金属电极,有效提升电流密度,以及有利于提升背面光学反射,增加短路电流,并且双面多晶硅化物钝化接触结构,能显著提升电池的开路电压。
Description
技术领域
本发明涉及一种太阳电池,具体涉及太阳电池背结构设计,同时涉及其制备方法。
背景技术
德国弗朗霍夫研究所于2013年提出一种晶硅太阳电池,其n型电池的典型结构如图1所示,该电池技术称为多晶硅钝化接触技术(poly-Si钝化接触技术)。Poly-Si钝化接触结构具有优异的表面钝化性能,可以有效提升电池效率。隧穿氧化硅钝化接触结构的钝化机理主要来源于两方面:一是界面氧化硅层的化学钝化作用,二是掺杂原子的场钝化作用。提升界面氧化硅的完整性、提高多晶硅及硅层表面的多数载流子浓度等措施有利于提高整体的钝化效果。
这种电池的核心结构在于背面,具体采用超薄氧化硅层和掺杂多晶硅叠层结构钝化硅片表面。而电池的正面是硼扩散发射极、氧化铝/氮化硅钝化层、金属栅线。
N型Poly-Si钝化接触电池具有很高的电池效率,目前产业小批量量产的n型Poly-Si钝化接触电池效率达到23%左右,比目前主流PERC电池的效率高出近0.5%,被公认为下一代产业化用高效太阳电池。各大电池厂家都在研究如何推进该技术的产业化应用。
然而,现有n型Poly-Si钝化接触技术的n型电池在产业化推广过程中仍非常缓慢,主要原因有两点。
1)背面多晶硅制备工艺不成熟。目前产业采用低压化学气相沉积法制备背面多晶硅,存在严重的绕镀问题,使得电池良率提升困难。不过,针对此问题目前已有相应的解决方案,如果改用PECVD设备,则有望解决绕镀问题,从而消除对产业化推广的影响。
2)电池正面扩硼技术和设备仍存在诸多缺陷,包括:扩硼时工艺温度高,易降低硅片载流子寿命;采用BBr3作为扩散源气体,反应副产物易导致炉门粘结和石英管破裂,设备运行维护成本高。而对于正面扩硼而言,目前仍未有很好的解决方案,成为该类电池推广的主要障碍。
发明内容
为解决上述技术问题,本发明提供一种可以改善电池性能、有利于规模化生产的新型n型钝化接触太阳电池。
本发明的技术方案是提供一种新型n型背结设计的硅太阳电池,包括衬底;衬底正面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、减反膜、前电极,形成n型钝化接触结构,形成n+前表面场;衬底背面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、全面金属背电极,或者由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、具有通孔的减反膜、全面金属背电极,从而在背面形成p+发射极。
进一步地,衬底正面的硅薄膜为多晶硅薄膜,或硅化物薄膜为多晶硅化物薄膜,其中多晶硅薄膜可以是重掺n型多晶硅薄膜(poly-Si),多晶硅化物薄膜可以是重掺n型的多晶氮硅薄膜(poly-SiNx),也可以是重掺n型的多晶碳硅薄膜(poly-SiCx)或者重掺n型的多晶氧硅薄膜(poly-SiOx),以减少光吸收。衬底正面硅薄膜或硅化物薄膜的厚度低于80nm,优选厚度为低于20nm,更优选厚度为低于10nm。
更进一步地,掺杂剂可以是磷、砷、锑中的一种或多种。
进一步地,衬底背面的硅薄膜为多晶硅薄膜,或硅化物薄膜为多晶硅化物薄膜,其中,多晶硅薄膜可以是重掺p型的多晶硅薄膜(poly-Si),多晶硅化物薄膜可以是重掺p型多晶碳硅薄膜(poly-SiCx),重掺p型多晶氮硅薄膜(poly-SiNx)或者重掺p型多晶氧硅薄膜(poly-SiOx)。衬底背面的硅薄膜或硅化物薄膜的厚度低于500nm,优选厚度为低于40nm,更优选厚度为低于20nm。
更进一步地,掺杂剂可以是硼、镓、铝中的一种或多种。
进一步地,衬底正面和衬底背面的介质钝化层可以是氧化硅、氮化硅、碳化硅、氧化铝中的一种,衬底正面的介质钝化层材质可以和衬底背面的介质钝化层材质相同或者不同。其中常用的介质钝化层是氧化硅层。
进一步地,衬底正面的减反膜为氮化硅减反膜,或由内到外为氮化硅/氧化硅减反膜,或由内到外为氧化铝/氮化硅减反膜,或其他折射率低于衬底的介质薄膜的组合。
进一步地,衬底背面在硅薄膜为多晶硅薄膜表面制备了全面金属背电极或依次制备具有通孔的减反膜和全面金属背电极,其中背面减反膜是氧化硅或氮化硅或氧化铝或其它介质减反膜中的至少一种,减反膜的折射率介于衬底折射率与背电极所采用的金属折射率之间,减反膜厚度范围是5nm-500nm,电极制备方法采用电镀法或物理蒸镀法或印刷烧结法,优先采用电镀法,这是因为电镀法不仅有利于保护背面硅薄膜为多晶硅薄膜,减少复合损失,同时由于采用了低温非真空处理工艺,也有利于降低成本。
进一步地,其中,衬底背面的全面金属背电极为至少两种金属Ma、Mc叠层背电极,叠层顺序是金属Ma为最靠近衬底背面的硅薄膜为多晶硅薄膜。金属Ma层可以与p型硅薄膜或硅化物薄膜形成欧姆接触,且粘附力好;Mc层的作用在于传输与保护内层金属。
优选地,金属Ma为镍、铝、铬、钛、钽、钴、铅、钯、铂中的一种,金属Mc为铝、锡、锌、镍、金、铬、钽、钯、铂中的一种。
优选地,金属Ma和金属Mc层之间还包括金属Mb层,金属Mb层可以是银、金、铝、铜、镍、钼、铂、钯中的一种形成的单层金属层,也可以是上述金属中的几种叠加后形成的叠层金属层,例如铝/铜叠层作为金属Mb层。金属Mb主要起光学减反和载流子传输的作用。
更优选地,金属Mb层的厚度是5-1000nm,优选是10-200nm。
进一步地,金属Ma层的厚度低于10nm,优选为0.2-5nm,金属Mc层的厚度是0-10000nm,优选是200-1000nm。
本发明还涉及电池的制备方法,步骤包括:
1)对衬底进行正面制绒,背面制绒或抛光;2)衬底正面依次制备氧化硅和非晶硅薄膜,衬底背面依次制备氧化硅和非晶硅薄膜,并进行800-1100℃高温退火,形成正面前场和背面发射极;3)然后衬底正面再制备减反膜;4)最后衬底正面丝网印刷电极烧结;5)背面制备全面金属电极为背电极,或依次制备具有通孔的减反膜和全面金属背电极,且背面电极制备方法采用电镀法。
本发明的优点和有益效果:
1)首先,采用背结设计,背面p+发射极采用p型poly-Si钝化接触技术取代硼扩散技术,从而绕开了目前量产技术和装备仍不够成熟的硼扩散。
2)更重要的是,该电池采用了新型的双面多晶硅化物钝化接触结构,能显著提升电池的开路电压。
3)该电池同时采用了新型的硅化物薄膜,可以减少正面短波吸收和背面长波吸收,增加短路电流。
4)该电池采用背结设计,有利于减少正面栅线数量,增加短路电流。
5)该电池优选采用全面金属背电极结构,有利于提升背面光学反射,增加短路电流;同时也有利于提升填充因子。
6)电池结构简单,具有成熟的量产解决方案,是一种产业用高效电池设计。
附图说明
图1是n型多晶硅钝化接触电池的结构示意图。
图2是本发明的新型n型钝化接触电池的结构示意图(无背面减反层)。
图3是本发明的新型n型钝化接触电池的结构示意图(有带通孔的背面减反层)。
具体实施方式
下面结合具体实施方式对本发明的具体结构、操作和原理作进一步说明。
本发明提供新型n型背结设计的硅太阳电池,包括衬底;衬底正面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、减反膜、前电极,形成n型Poly-Si钝化接触结构,形成n+前表面场;衬底背面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、减反膜、全面金属背电极,或者由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、具有通孔的减反膜、全面金属背电极,在衬底背面形成p+发射极。
采用上述结构的电池其pn结位于电池背面,也就是采用背结结构设计,p+发射极位于电池背面,电池正面和背面均采用Poly-Si钝化接触结构,正面为n型Poly-Si钝化接触结构,形成n+前表面场,背面为p+发射极。上述结构有利于减少正面栅线数量,增加短路电流。
正面Poly-Si钝化接触,优选采用重掺n型多晶氮硅薄膜(poly-SiNx),也可以是重掺n型多晶碳硅薄膜(poly-SiCx)或者重掺n型多晶氧硅薄膜(poly-SiOx),掺杂剂可以是磷、砷、锑等,上述薄膜对短波吸收较低,以减少正面光吸收。
背面Poly-Si钝化接触,优选采用重掺p型多晶碳硅薄膜(poly-SiCx),也可以是重掺p型多晶硅薄膜(poly-Si)重掺p型多晶氮硅薄膜(poly-SiNx)、重掺p型多晶氧硅薄膜(poly-SiOx),掺杂剂可以是硼、镓、铝等,上述薄膜对长波吸收较低,以减少背面光吸收。
在背面p型Poly-Si钝化接触上通过制备全面积的金属叠层背电极,有利于提升背面光学反射,增加短路电流,同时也有利于提升填充因子。金属叠层至少为两层,具体应用中,根据不同需求,对电极的层数和金属进行调整。以三层叠层为例,对金属种类的调整,1)例如:底层金属镍进行更换,例如铝、铬、钛等,关键在于所更换的金属可以跟p型多晶硅形成良好的欧姆接触;2)又例如:最外层的金属铝也更换为其他金属,如锡、钯等,关键在于所更换金属可以对内部金属形成良好的包含作用、同时具有较好的导电性;3)又例如:可以在底层金属银和最外层金属铝之间再引入其他金属层,如金属铂、钯、铜,增加对内部银电极的保护、提供电极导电性等。
实施例一
制备流程:1)选用衬底为厚180微米的n型单晶硅片,进行清洗、正面制绒、背面抛光;2)正面制备氧化硅和磷掺杂的非晶氮硅薄膜,背面制备氧化硅和硼掺杂的非晶碳硅薄膜,并进行900℃高温退火30分钟,形成正面前场和背面发射极;3)正面制备氮化硅减反层;4)正面丝网印刷烧结;5)背面依次电镀镍/银/铝作为背电极,其中镍层厚度为5nm,铝层厚度为900nm,银层厚度为595nm,电极总厚度为1.5微米;6)分析测试电池效率。
实施例二
制备流程:1)选用衬底为厚180微米的n型单晶硅片,进行清洗、正面制绒、背面抛光;2)正面制备氧化硅和磷掺杂的非晶氮硅薄膜,背面制备氧化硅和硼掺杂的非晶氧硅薄膜,并进行950℃高温退火30分钟,形成正面前场和背面发射极;3)正面和背面分别制备氮化硅减反层;4)正面和背面分别进行丝网印刷烧结;5)背面依次电镀铬/银/铜/铝作为背电极,电极总厚度为1微米;6)分析测试电池效率。
实施例三
制备流程:1)选用衬底为厚180微米的n型单晶硅片,进行清洗、正面制绒、背面抛光;2)正面制备氧化硅和磷掺杂的非晶氮硅薄膜,背面制备氧化硅和硼掺杂的非晶硅薄膜,并进行920℃高温退火30分钟,形成正面前场和背面发射极;3)正面制备氮化硅减反层;4)正面进行丝网印刷烧结;5)背面依次电镀铬/银/铜/铝作为背电极,电极总厚度为1微米;6)分析测试电池效率。
实施例四
制备流程:1)选用衬底为厚180微米的n型单晶硅片,进行清洗、正面制绒、背面抛光;2)正面制备氧化硅和磷掺杂的非晶氮硅薄膜,背面制备氧化硅和硼掺杂的非晶硅薄膜,并进行920℃高温退火30分钟,形成正面前场和背面发射极;3)正面制备氮化硅减反层;4)正面进行丝网印刷烧结;5)制备100nm的背面氧化硅减反膜,并对氧化硅薄膜进行开孔处理,使得背面金属电极可以直接接触多晶硅,开孔率约为5%;6)背面依次电镀铬/银/铜/铝作为背电极,电极总厚度为1微米;7)分析测试电池效率。
实施例五
本实施例与实施例一的区别在于,背面依次电镀银/铝作为背电极,其余同实施例一。将得到的电极组装成电池后进行测试,结果如表1所示。
实施例六至实施例九
实施例六至实施例九与实施例一的区别在于背电极中金属层的厚度不同,由此电极厚度不同,各金属层的厚度如下表所示:
表2
编号 | 实施例六 | 实施例七 | 实施例八 | 实施例九 |
镍 | 10nm | 0.2nm | 2.5nm | 3nm |
银 | 500nm | 10nm | 100nm | 50nm |
铝 | 10000nm | 200nm | 400nm | 1000nm |
对比例一常规n型多晶硅钝化接触电池
制备流程:1)选用衬底为厚180微米的n型单晶硅片,进行清洗、两面制绒;2)采用硼扩散制备p+发射极;3)背面抛光;4)制备背面氧化硅层和掺磷的非晶硅薄膜层;5)进行850℃退火30分钟;6)正面沉积三氧化铝和氮化硅叠层;7)背面沉积氮化硅层;8)正面和反面均进行丝网印刷烧结;9)分析测试电池效率。
对比例二
对比例二与实施例一的区别在于,背面仅电镀银作为背电极,其余同实施例一。
将组装得到的电池进行测试,结果如表1所示。
表1.不同样品钝化效果对比
样品编号 | V<sub>oc</sub>(mV) | J<sub>sc</sub>(mA/cm<sup>2</sup>) | FF(%) | Eff.(%) |
实施例一 | 721 | 42.01 | 81.32 | 24.63 |
实施例二 | 716 | 41.54 | 80.53 | 23.95 |
实施例三 | 717 | 41.95 | 81.35 | 24.46 |
实施例四 | 720 | 42.50 | 80.68 | 24.69 |
实施例五 | 716 | 42.13 | 80.49 | 24.27 |
实施例六 | 710 | 41.89 | 81.14 | 24.13 |
实施例七 | 716 | 42.21 | 81.24 | 24.55 |
实施例八 | 715 | 42.45 | 81.05 | 24.60 |
实施例九 | 717 | 42.37 | 81.15 | 24.65 |
对比例一 | 705 | 40.71 | 81.65 | 23.43 |
对比例二 | 715 | 42.39 | 80.31 | 24.34 |
通过对比不同样品电池效率,得出双面多晶硅化物钝化接触结构,能显著提升电池的开路电压;此外采用全面金属背电极结构,有利于提升背面光学反射,增加短路电流;同时也有利于提升填充因子,得到高效率的太阳能电池。
本发明实施例涉及到的材料、试剂和实验设备,如无特别说明,均为符合太阳电池领域的市售产品。
以上所述,仅为本发明的优选实施例,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明的核心技术的前提下,还可以做出改进和润饰,这些改进和润饰也应属于本发明的专利保护范围。与本发明的权利要求书相当的含义和范围内的任何改变,都应认为是包括在权利要求书的范围内。
Claims (17)
1.新型n型背结设计的硅太阳电池,包括衬底;其特征在于,所述衬底正面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、减反膜、前电极,形成n型钝化接触结构,即形成n+前表面场;衬底背面由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、全面金属背电极,或者由内向外依次为介质钝化层、硅薄膜或硅化物薄膜、具有通孔的减反膜、全面金属背电极,形成p+发射极。
2.如权利要求1所述的新型n型背结设计的硅太阳电池,其特征在于,衬底正面的硅薄膜为多晶硅薄膜,或硅化物薄膜为多晶硅化物薄膜,多晶硅薄膜包括重掺n型多晶氮硅薄膜、重掺n型多晶碳硅薄膜、重掺n型多晶氧硅薄膜中的一种;衬底正面硅薄膜或硅化物薄膜的厚度低于80nm;掺杂剂为磷、砷、锑中的一种或多种。
3.如权利要求2所述的新型n型背结设计的硅太阳电池,其特征在于,衬底正面硅薄膜或硅化物薄膜的厚度低于20nm。
4.如权利要求2所述的新型n型背结设计的硅太阳电池,其特征在于,衬底正面硅薄膜或硅化物薄膜的厚度低于10nm。
5.如权利要求1所述的新型n型背结设计的硅太阳电池,其特征在于,衬底背面的硅薄膜是重掺p型多晶硅薄膜,硅化物薄膜是重掺p型多晶碳硅薄膜、重掺p型多晶氮硅薄膜、重掺p型多晶氧硅薄膜中的一种;衬底背面的硅薄膜或硅化物薄膜的厚度低于500nm;掺杂剂为硼、镓、铝中的一种或多种。
6.如权利要求1所述的新型n型背结设计的硅太阳电池,其特征在于,衬底正面和衬底背面的介质钝化层是氧化硅、氮化硅、碳化硅、氧化铝中的一种,衬底正面的介质钝化层材质和衬底背面的介质钝化层材质相同或者不同。
7.如权利要求5所述的新型n型背结设计的硅太阳电池,其特征在于,衬底背面的硅薄膜或硅化物薄膜层的厚度低于40nm。
8.如权利要求5所述的新型n型背结设计的硅太阳电池,其特征在于,衬底背面的硅薄膜或硅化物薄膜的厚度低于20nm。
9.如权利要求1所述的新型n型背结设计的硅太阳电池,其特征在于,衬底正面的减反膜为氮化硅减反膜,或由内到外为氮化硅/氧化硅减反膜,或由内到外为氧化铝/氮化硅减反膜,或由内到外为氧化铝/氮化硅/氧化硅减反膜,或其他折射率低于衬底的介质薄膜的组合。
10.如权利要求1所述的新型n型背结设计的硅太阳电池,其特征在于,衬底背面在硅薄膜或硅化物薄膜表面制备了全面金属背电极或依次制备具有通孔的减反膜和全面金属背电极,其中背面减反膜是氧化硅或氮化硅或氧化铝或透明导电薄膜或其它介质减反膜中的至少一种,减反膜的折射率介于衬底折射率与背电极所采用的金属折射率之间,减反膜厚度范围是5nm-500nm,电极制备方法采用电镀法或物理蒸镀法或印刷烧结法;其中金属背电极为至少两种金属Ma、Mc叠层背电极,叠层顺序是金属Ma为最靠近衬底背面的硅薄膜或硅化物薄膜。
11.如权利要求10所述的新型n型背结设计的硅太阳电池,其特征在于,所述金属Ma为镍、铝、铬、钛、钽、钴、铅、钯、铂中的一种,所述金属Mc为铝、锡、锌、镍、金、铬、钽、钯、铂中的一种。
12.如权利要求10所述的新型n型背结设计的硅太阳电池,其特征在于,所述金属Ma和所述金属Mc层之间还包括金属Mb层,所述金属Mb层为银、金、铝、铜、镍、钼、铂、钯中的一种形成的金属层或者两种以上形成的叠层金属层。
13.如权利要求12所述的新型n型背结设计的硅太阳电池,其特征在于,所述金属Mb层的厚度是5-1000nm。
14.如权利要求12所述的新型n型背结设计的硅太阳电池,其特征在于,所述金属Mb层的厚度是10-200nm。
15.如权利要求10所述的新型n型背结设计的硅太阳电池,其特征在于,所述金属Ma层的厚度低于10nm,所述金属Mc层的厚度是0-10000nm。
16.如权利要求10所述的新型n型背结设计的硅太阳电池,其特征在于,所述金属Ma层的厚度为0.2-5nm,所述金属Mc层的厚度是200-1000nm。
17.如权利要求1所述的新型n型背结设计的硅太阳电池的制备方法,其特征在于,步骤包括:
1)对衬底进行正面制绒,背面抛光或制绒;2)衬底正面依次制备氧化硅和非晶硅薄膜,衬底背面依次制备氧化硅和非晶硅薄膜,并对衬底进行800-1100℃高温退火,形成正面前场和背面发射极;3)然后衬底正面再制备减反膜;4)最后衬底正面丝网印刷电极烧结;5)衬底背面制备全面金属电极为背电极,或依次制备具有通孔的减反膜和全面金属背电极,且背面电极制备方法采用电镀法或物理蒸镀法或印刷烧结法。
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