WO2022183603A1 - 一种具有双面铝浆电极的N型Topcon电池及其制备方法 - Google Patents

一种具有双面铝浆电极的N型Topcon电池及其制备方法 Download PDF

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WO2022183603A1
WO2022183603A1 PCT/CN2021/095755 CN2021095755W WO2022183603A1 WO 2022183603 A1 WO2022183603 A1 WO 2022183603A1 CN 2021095755 W CN2021095755 W CN 2021095755W WO 2022183603 A1 WO2022183603 A1 WO 2022183603A1
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layer
sin
type
battery
thickness
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French (fr)
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丰明璋
何胜
徐伟智
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正泰新能科技有限公司
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Priority to EP21928684.6A priority patent/EP4235808A4/en
Priority to US18/038,704 priority patent/US20240097057A1/en
Publication of WO2022183603A1 publication Critical patent/WO2022183603A1/zh

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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of solar cells, in particular to an N-type Topcon cell with double-sided aluminum paste electrodes and a preparation method thereof.
  • Topcon solar cell (Tunnel Oxide Passivated Contact) is a solar cell that uses an ultra-thin oxide layer as a passivation layer structure.
  • the structure of the N-type Topcon battery is N-type Si
  • the P+ doped layer is obtained by B diffusion on the front side
  • the corresponding AlO x /SiN x passivation dielectric film is deposited on the front side by ALD or PECVD.
  • N-type Topcon cells use silver paste on the back, although it can ensure a higher bifacial ratio, but at the same time increases the battery manufacturing cost, Therefore, in order to meet the principles of efficiency improvement and cost reduction of N-type Topcon cells at the same time, the use of silver paste on the back side should be reduced as much as possible; occupy an absolute advantage.
  • the patent number CN202010483586.7 the patent name "a manufacturing method of an N-type Topcon solar cell", which relates to a manufacturing method of an N-type Topcon solar cell, includes the following steps: a. Double-sided texturing: b. Single-sided Spin coating: c. Single-sided oxidation: A layer of boron-containing silicon oxide is formed on the spin coating surface; d. Formation of heavily and lightly doped area substrate: Using a mask method, a protective heavily doped area is formed at the position of the corresponding metal gate line the organic mask layer; use HF to completely remove the boron-containing silicon oxide layer and the boron source outside the coverage area of the organic mask layer, and then remove the organic mask layer; e.
  • the disadvantage is that only the silver grid is used as the transmission medium, and the photoelectric conversion efficiency of the battery is low.
  • the present invention provides an N-type Topcon battery with double-sided aluminum paste electrodes and a preparation method thereof.
  • Gate line and segmented silver busbar by adjusting the glass powder composition in the paste, only a good ohmic contact is formed between the paste and the doped N-type doped polysilicon layer, and no BSF layer is formed, so that the backside aluminum paste can be realized
  • silver paste a good field passivation effect is formed, thereby increasing the diffusion length of carriers, improving the Voc of the battery, and reducing the manufacturing cost of the battery.
  • An N-type Topcon battery with double-sided aluminum paste electrodes the battery includes an N-type substrate, and the front of the N-type substrate is sequentially provided with a P-type doped region layer, an AlO x layer and a SiN x Hy layer from the inside to the outside.
  • the backside of the type substrate is sequentially provided with a tunnel oxide layer, an N-type doped polysilicon layer and a SiNxHy layer from the inside to the outside, and a frontside silver busbar and a frontside aluminum fine grid are arranged on the SiNxHy layer on the front side.
  • the back side silver busbar and the back side aluminum fine grid are arranged on the SiN x Hy layer on the back side.
  • the preparation method of the above cell includes: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ winding plating removal ⁇ front side AlOx layer and SiNxHy Layer deposition ⁇ backside SiNxHy deposition ⁇ front/backside UV laser ablation ⁇ screen printing.
  • aluminum paste and a small amount of silver paste are respectively used on the front to obtain aluminum fine grids and segmented silver busbars.
  • Aluminum fine grids and segmented silver busbars are prepared by using aluminum paste and a small amount of silver paste.
  • the aluminum fine grids collect the collected current to the silver busbars, and the silver busbars meet the welding requirements; on the one hand, this method can reduce the amount of silver on the front and back.
  • the Voc of the battery can be improved by reducing the laser damage, forming the front surface field on the front surface, and reducing the metal recombination, and the battery efficiency is better than that of the double-sided silver paste.
  • the front silver busbar adopts a segmented design.
  • the front silver busbar is distributed in the aluminum fine grid line.
  • the number of grids is 106-122, the width is 25-40um, and the height is 10-25um; the length of each section of the front silver busbar is 2-8mm, the width is 0.1-2mm, the height is 4-8um, and the number of roots is 5-12;
  • D. Use weak burn-through aluminum paste printing and sintering on the back of the battery to form a local contact point H-type back aluminum fine grid electrode.
  • the number of aluminum fine grids on the back is 110-160, the width is 40-160um, and the height is 10-25um ;
  • the silver busbar on the back adopts a segmented design, each segment is 2-8mm in length, 0.1-2mm in width, 4-8um in height, and the number of roots is 5-12.
  • the front side of the present invention removes part of the AlO x layer and the SiN x Hy layer passivation film by UV laser ablation without damaging the PN junction, and the back side partially removes the SiN x Hy layer passivation film by UV laser. , and does not damage the N-type doped polysilicon layer;
  • the advantages of the front/back metal electrode of the present invention are: (1) UV laser ablation is used to remove the passivation film of the front surface part of the AlO x layer and the SiN x Hy layer, which is more green than green light.
  • the spot diameter is small, and there is almost no ablation crater on the edge, which minimizes the damage to the passivation dielectric film and the PN junction area of the battery;
  • UV laser ablation is used to remove the passivation of the SiN x Hy layer on the back surface.
  • the diameter of the spot is smaller, and there is almost no ablation crater on the edge, which minimizes the damage to the passivation dielectric film, and can precisely control the release of energy to ensure that the N-type doped polysilicon layer is not damaged.
  • Using this method to make front/back metal electrodes can ensure that the efficiency is equivalent to that of double-sided silver paste metal electrodes, but the production cost is greatly reduced.
  • the thickness of the AlO x layer on the front is 2-15 nm, the thickness of the SiN x Hy layer on the front is 50-100 nm; the thickness of the tunnel oxide layer on the back is 1-8 nm, and the thickness of the N-type doping layer on the back is 1-8 nm.
  • the thickness of the polysilicon layer is 100-200nm, and the thickness of the SiNxHy layer on the backside is 50-100nm .
  • Front AlO x and SiN x Hy increase the passivation effect of the front surface and reduce the reflectivity of the front surface
  • the tunnel oxide layer on the back side is the selective passivation of carriers
  • the N-doped polysilicon is mainly to reduce the contact resistance with the back electrode
  • the backside SiNxHy increases the passivation effect of the backside surface. This thickness range is set because different film thicknesses require both optical and electrical balance to maximize the photoelectric conversion efficiency.
  • the spot diameter of the UV laser is 10-30um; the spot spacing is 0-700um , the depth of the front ablation and removal of the film is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal of the film is the same as the thickness of the back SiN
  • the thickness of the passivation dielectric film of the xHy layer is the same.
  • the depth of the front/reverse ablation and removal must be consistent with the thickness of the passivation film layer, so as to ensure that the front aluminum fine gate and the P-type doped region layer are in full contact, and the back aluminum fine The gate is in full contact with the N-type doped polysilicon layer, so that the photoelectric conversion efficiency of the battery is further improved.
  • the backside aluminum fine gate formed by backside sintering forms an ohmic contact with the N-type doped polysilicon layer, and a BSF layer will not be formed.
  • the aluminum fine gate only forms ohmic contact with the N-type doped polysilicon layer, and the aluminum paste will not continue to penetrate the doped polysilicon layer into the Si matrix to form secondary doping, so the BSF layer will not be formed.
  • the N-type Topcon battery with double-sided aluminum paste electrodes prepared by the preparation method the thickness of the front silver busbar is smaller than the thickness of the front aluminum fine grid, the front silver busbar is distributed in the front aluminum fine grid, and the back silver busbar is The thickness of the backside aluminum fine grid is smaller than that of the backside aluminum fine grid, and the backside silver busbar is distributed in the backside aluminum fine grid.
  • the silver busbar is printed first, and then the aluminum fine grid is printed, the two need an overlapping part to collect the carriers collected by the aluminum fine grid to the silver busbar.
  • the silver busbar is lower than the aluminum fine grid.
  • the design will not affect the welding effect of the silver busbar, thereby improving the flow efficiency of carriers, and in terms of the surface structure of the battery, the convexity of the welding structure of the silver busbar is avoided, the surface structure is also more flat, and the whole battery is small in size , saving installation space.
  • the AlO x layer and the SiN x Hy layer on the front side are provided with contact grooves, and the SiN x Hy layer on the back side is provided with contact grooves.
  • the front-side aluminum fine grids pass through the contact grooves to form local contact points with the AlO x layer.
  • the backside aluminum fine gate passes through the contact groove to form a local contact point with the N-type doped polysilicon layer.
  • the back metal electrode of the N-type Topcon cell is directly printed with silver paste, and the front metal electrode is printed with silver-aluminum paste.
  • the production cost is high, and the efficiency advantage cannot be highlighted, that is, the solar energy cannot be significantly reduced.
  • the manufacturing cost per watt of the battery some researchers focus on the use of the front silver paste of the N-type Topcon battery.
  • the aluminum fine grid is first printed, and then the silver fine grid is superimposed on the aluminum fine grid; this method
  • the consumption of the front silver paste is reduced to a certain extent and the production cost of the battery is reduced, in order to meet the sintering conditions of the upper layer silver paste, the sintering temperature is too high, which leads to the enhanced horizontal and vertical expansion of the lower layer aluminum paste.
  • the front side of the cell is first subjected to UV laser ablation to remove part of the passivation film of the AlO x layer and SiN x Hy layer on the surface, and then use aluminum paste and A small amount of silver paste is printed to obtain fine grid lines and segmented silver busbars; the back of the battery is also first removed by UV laser ablation to remove the surface part of the SiN x Hy layer, because the N-type doped polysilicon layer is not damaged by laser reference control, and then aluminum alloys are used respectively. Paste and a small amount of silver paste are printed to obtain fine grid lines and segmented silver busbars.
  • the battery structure of the present invention has the following advantages: (1) The front surface is directly printed with aluminum paste to obtain aluminum grid lines, and on the one hand, N-type doping can be formed on the front surface.
  • the polysilicon layer forms a good field passivation effect, thereby increasing the diffusion length of carriers and improving the Voc of the battery; on the other hand, it can greatly reduce the production cost of the front electrode; (2)
  • the back side is directly printed with aluminum paste to obtain an aluminum grid Line, by adjusting the glass powder composition in the paste, only a good ohmic contact is formed between the paste and the doped N-type doped polysilicon layer, and no BSF layer is formed, so that the backside aluminum paste can be replaced by the silver paste, and the backside can be reduced.
  • the front/back surface is made of aluminum paste to avoid excessive metal recombination caused by the entry of the deep-level impurity Ag of Si, that is, the J 0,metal is too large, thereby improving the battery Voc and battery The conversion efficiency is low.
  • the present invention has the following beneficial effects:
  • the aluminum fine grid and segmented silver busbar are made by using aluminum paste and a small amount of silver paste on the front/back of the battery structure.
  • the aluminum fine grid collects the collected current to the silver busbar, and the silver busbar meets the welding requirements. ;
  • UV laser ablation is used to remove the passivation film of AlO x layer and SiN x Hy layer on the front surface.
  • the spot diameter is smaller, and there is almost no ablated crater on the edge, which minimizes the Damage to the passivation dielectric film and the PN junction area of the battery, and reduce the damage to the surface coating of the battery;
  • the battery structure can reduce the consumption of silver paste on the front and back, thereby reducing the cost; on the other hand, it can improve the battery Voc by reducing laser damage, forming a front surface field on the front surface, and reducing metal recombination, and the battery efficiency is better than Cell efficiency of double-sided silver paste.
  • FIG. 1 is a schematic diagram of the structure of a battery of the present invention.
  • FIG. 2 is a schematic diagram of the structure of a front grid line of a battery according to the present invention.
  • FIG. 3 is a schematic diagram of a grid line structure on the back side of a battery according to the present invention.
  • N-type substrate 2. Front silver busbar; 3. Front aluminum fine grid; 4. Back silver busbar; 5. Back aluminum fine grid; 6. P-type doped region layer; 7. AlO x layer; 8, SiN x Hy layer; 9, tunnel oxide layer; 10, N-type doped polysilicon layer; 11, local contact point.
  • an N-type Topcon battery with double-sided aluminum paste electrodes includes an N-type substrate 1, and the front side of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO layer from the inside to the outside x layer 7 and SiN x Hy layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside, and the SiN x layer on the front side is The front silver busbar 2 and the front aluminum fine grid 3 are arranged on the Hy layer 8 , and the rear silver busbar 4 and the back aluminum fine grid 5 are arranged on the SiN x Hy layer 8 on the back.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes is as follows: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and polysilicon layer ⁇ backside P diffusion ⁇ removal PSG ⁇ de-plating ⁇ front AlO x layer and SiN x Hy layer deposition ⁇ back SiN x Hy deposition ⁇ front/back UV laser ablation ⁇ screen printing. Including the following specific preparation steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer.
  • the thickness of PECVD deposition is 2-15nm.
  • the AlO x layer with a thickness of 50-100nm and a SiN xH y layer with a thickness of 50-100nm are deposited on the back of the N-type silicon wafer by LPCVD with a thickness of 1-8mm.
  • P diffusion forms an N-type doped polysilicon layer with a thickness of 100-200 nm, and a SiN x Hy layer with a thickness of 50-100 nm is deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 10-30um; the spot spacing is 0-700um , the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is the same as the thickness of the passivation dielectric film of the SiN x Hy layer on the back consistent;
  • the front silver busbar adopts a segmented design, the front silver busbar is distributed in the aluminum thin grid line, the number of the front aluminum thin grid is 106-122, the width is 25-40um, and the height is 25-40um.
  • the length of each section of the front silver busbar is 2-8mm, the width is 0.1-2mm, the height is 4-8um, and the number of wires is 5-12;
  • Use weak fire-through aluminum paste Al 60-80wt%, Si ⁇ 40wt%, glass frit ⁇ 5wt%, resin ⁇ 5wt%; add organic solvent to adjust the viscosity to 20-25Pa.s
  • Form a local contact point H-type back aluminum fine grid electrode the number of aluminum fine grids on the back is 110-160, the width is 40-160um, and the height is 10-25um;
  • the back silver busbar adopts a segmented design, and the length of each section is 2-8mm, 0.1-2mm wide, 4-8um high, and 5-12 in number;
  • the aluminum fine gate formed by backside sintering and the N-type doped polysilicon layer form an ohmic contact, and no BSF layer will be formed.
  • an N-type Topcon battery with double-sided aluminum paste electrodes includes an N-type substrate 1, and the front side of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6 and an AlO x layer from the inside to the outside. 7 and SiN x Hy layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the front side is The SiN x Hy layer 8 is provided with a front silver busbar 2 and a front aluminum fine grid 3.
  • the back SiN x Hy layer 8 is provided with a rear silver busbar 4 and a back aluminum fine grid. Grid 5.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes is as follows: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and polysilicon layer ⁇ backside P diffusion ⁇ removal PSG ⁇ de-plating ⁇ front AlO x layer and SiN x Hy layer deposition ⁇ back SiN x Hy deposition ⁇ front/back UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 8 nm is deposited by PECVD.
  • the x layer and the SiN x Hy layer with a thickness of 80nm are deposited on the back of the N-type silicon wafer by LPCVD with a thickness of 2nm.
  • the thickness of the N-type doped polysilicon is formed by LPCVD and P diffusion. layer, the PECVD deposition thickness is 75nm SiN x Hy layer;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 20um; the spot spacing is 350um, the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design, the front silver busbar is distributed in the aluminum fine grid lines, the number of front aluminum fine grids is 112, the width is 32um, and the height is 18um; the length of each section of the front silver busbar is 5mm, width 1mm, height 6um, the number of roots is 8;
  • an N-type Topcon battery with double-sided aluminum paste electrodes includes an N-type substrate 1, and the front side of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6 and an AlO x layer from the inside to the outside. 7 and SiN x Hy layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside, as shown in FIG. 21, the front side is The SiN x Hy layer 8 is provided with a front silver busbar 2 and a front aluminum fine grid 3. As shown in FIG. 3, the back SiN x Hy layer 8 is provided with a rear silver busbar 4 and a back aluminum fine grid. Grid 5.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes is as follows: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P-diffusion ⁇ PSG removal ⁇ de-winding plating ⁇ front AlO x layer and SiN x Hy layer deposition ⁇ back SiN x Hy deposition ⁇ front/back UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 15nm is deposited by PECVD.
  • the x layer and the 50nm thick SiN x Hy layer with a thickness of 100nm are deposited on the back of the N-type silicon wafer by LPCVD in turn with a thickness of 1nm.
  • the tunnel oxide layer is formed by LPCVD and P diffusion.
  • Type doped polysilicon layer, a SiN x Hy layer with a thickness of 100 nm is deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 10um; the spot spacing is 700um , the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design, the front silver busbar is distributed in the aluminum fine grid lines, the number of front aluminum fine grids is 106, the width is 40um, and the height is 10um; the length of each section of the front silver busbar is 8mm, width 0.1mm, height 8um, the number of roots is 5;
  • an N-type Topcon battery with double-sided aluminum paste electrodes includes an N-type substrate 1, and the front side of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6 and an AlO x layer from the inside to the outside. 7 and SiN x Hy layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the front side is The SiN x Hy layer 8 is provided with a front silver busbar 2 and a front aluminum fine grid 3.
  • the back SiN x Hy layer 8 is provided with a rear silver busbar 4 and a back aluminum fine grid. Grid 5.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes is as follows: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P-diffusion ⁇ PSG removal ⁇ de-winding plating ⁇ front AlO x layer and SiN x Hy layer deposition ⁇ back SiN x Hy deposition ⁇ front/back UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • the x layer and the SiN x Hy layer with a thickness of 50nm are deposited on the back of the N-type silicon wafer by LPCVD with a thickness of 8nm in turn, and the N-type doped polysilicon layer with a thickness of 100nm is formed by LPCVD and P diffusion.
  • a SiN x Hy layer with a thickness of 60 nm was deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 30um; the spot spacing is 0um , the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design, the front silver busbar is distributed in the aluminum fine grid lines, the number of front aluminum fine grids is 122, the width is 25um, and the height is 25um; the length of each section of the front silver busbar is 2mm, width 2mm, height 4um, the number of roots is 12;
  • an N-type Topcon battery with double-sided aluminum paste electrodes includes an N-type substrate 1, and the front side of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6 and an AlO x layer from the inside to the outside. 7 and SiN x Hy layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the front side is The SiN x Hy layer 8 is provided with a front silver busbar 2 and a front aluminum fine grid 3, as shown in FIG. Grid 5.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the back silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes is as follows: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P-diffusion ⁇ PSG removal ⁇ de-winding plating ⁇ front AlO x layer and SiN x Hy layer deposition ⁇ back SiN x Hy deposition ⁇ front/back UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • x layer and SiN x Hy layer with a thickness of 60nm deposit a tunnel oxide layer with a thickness of 2nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 120nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 80 nm was deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 25um; the spot spacing is 100um, the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design, the front silver busbar is distributed in the aluminum fine grid lines, the number of front aluminum fine grids is 112, the width is 30um, and the height is 20um; the length of each section of the front silver busbar is 4mm, width 0.5mm, height 5um, the number of roots is 7;
  • an N-type Topcon battery with double-sided aluminum paste electrodes includes an N-type substrate 1, and the front side of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6 and an AlO x layer from the inside to the outside. 7 and SiN x Hy layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the front side is The SiN x Hy layer 8 is provided with a front silver busbar 2 and a front aluminum fine grid 3.
  • the back SiN x Hy layer 8 is provided with a rear silver busbar 4 and a back aluminum fine grid. Grid 5.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes is as follows: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P-diffusion ⁇ PSG removal ⁇ de-winding plating ⁇ front AlO x layer and SiN x Hy layer deposition ⁇ back SiN x Hy deposition ⁇ front/back UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • x layer and SiN x Hy layer with a thickness of 90nm deposit a tunnel oxide layer with a thickness of 3nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 180nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 90 nm was deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 15um; the spot spacing is 650um , the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design, the front silver busbar is distributed in the aluminum fine grid lines, the number of front aluminum fine grids is 120, the width is 35um, and the height is 22um; the length of each section of the front silver busbar is 6mm, width 1.6mm, height 6.5um, the number of roots is 10;
  • D. Use weak fire-through aluminum paste (Al 65wt%, Si 25wt%, glass frit 5wt%, resin 5wt%; add organic solvent to adjust the viscosity to 20Pa.s) on the back of the battery to print and sinter to form a local contact point H-type backside Aluminum fine grid electrode, the number of aluminum fine grids on the back is 150, the width is 150um, and the height is 15um; the silver busbar on the back adopts a segmented design, each section is 6.5mm long, 1.8mm wide, and 6um high, and the number of wires is 10; The aluminum fine gate formed by backside sintering and the N-type doped polysilicon layer form an ohmic contact, and a BSF layer will not be formed.
  • weak fire-through aluminum paste Al 65wt%, Si 25wt%, glass frit 5wt%, resin 5wt%; add organic solvent to adjust the viscosity to 20Pa.s
  • Comparative Example 1 (The difference from Example 1 is that there are no aluminum grid lines on the front and back sides.)
  • An N-type Topcon battery comprising an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO x layer 7 and a SiN x Hy layer 8 from the inside to the outside, and the N-type substrate
  • the back surface of 1 is provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 in sequence from the inside to the outside.
  • the backside silver busbar 4 is provided on the SiN x Hy layer 8 .
  • the preparation process of the N-type Topcon cell is: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ unwinding plating ⁇ front side AlOx layer and SiNxHy layer deposition ⁇ backside SiNxHy deposition ⁇ front/backside UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 8 nm is deposited by PECVD.
  • x layer and SiN x Hy layer with a thickness of 80nm deposit a tunnel oxide layer with a thickness of 4nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 150nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 75 nm was deposited by PECVD;
  • each segment is 5mm in length, 1mm in width, 5um in height, and the number of wires is 8.
  • Comparative Example 2 (the difference from Example 1 is that UV laser ablation is not used to remove part of the AlO x layer and SiN x Hy layer passivation dielectric film on the front side of the battery; UV laser ablation is not used to remove part of the SiN x layer on the back of the battery. Hy layer passivation dielectric film.)
  • An N-type Topcon battery comprising an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO x layer 7 and a SiN x Hy layer 8 from the inside to the outside, and the N-type substrate
  • the back side of 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the backside silver busbar 4 and the backside aluminum fine grid 5 are arranged on the SiN x Hy layer 8 on the back side.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation process of the N-type Topcon cell is: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ unwinding plating ⁇ Front side AlOx layer and SiNxHy layer deposition ⁇ back side SiNxHy deposition ⁇ screen printing. Specifically include the following steps:
  • x layer and SiN x Hy layer with a thickness of 80nm deposit a tunnel oxide layer with a thickness of 4nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 150nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 75 nm was deposited by PECVD;
  • the front silver busbar adopts a segmented design.
  • the front silver busbar is distributed in the aluminum fine grid lines.
  • the number of front aluminum fine grids is 112, the width is 32um, and the height is 18um; the length of each section of the front silver busbar is 5mm. , width 1mm, height 6um, the number of roots is 8;
  • the number of aluminum fine grids on the back is 135, the width is 100um, and the height is 18um; the silver busbar on the back adopts a segmented design, each segment is 5mm long, 1mm wide, 5um high, and the number is 8.
  • Comparative Example 3 (The difference from Example 1 is that only part of the SiN x Hy layer passivation dielectric film is removed by UV laser ablation on the front side of the battery.)
  • An N-type Topcon battery comprising an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO x layer 7 and a SiN x Hy layer 8 from the inside to the outside, and the N-type substrate
  • the back side of 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the backside silver busbar 4 and the backside aluminum fine grid 5 are arranged on the SiN x Hy layer 8 on the back side.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation process of the cell is: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ de-winding plating ⁇ front side AlO x layer and SiN xHy layer deposition ⁇ backside SiNxHy deposition ⁇ front/backside UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 8 nm is deposited by PECVD.
  • x layer and SiN x Hy layer with a thickness of 80nm deposit a tunnel oxide layer with a thickness of 4nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 150nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 75 nm was deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery; the spot diameter of the UV laser is 20um ; The spot spacing is 350um, the depth of the front ablation and removal of the film is consistent with the thickness of the SiN x Hy layer, and the depth of the back ablation and removal of the film is consistent with the thickness of the passivation dielectric film of the back SiN x Hy layer;
  • the front silver busbar adopts a segmented design.
  • the front silver busbar is distributed in the aluminum fine grid line.
  • the number of grids is 112, the width is 32um, and the height is 18um; the length of each section of the front silver busbar is 5mm, the width is 1mm, the height is 6um, and the number of grids is 8;
  • D. Use weak burn-through aluminum paste printing and sintering on the back of the battery to form a local contact point H-type back aluminum thin grid electrode.
  • the number of aluminum thin grids on the back is 135, the width is 100um, and the height is 18um; the silver busbar on the back adopts Segmented design, each segment is 5mm in length, 1mm in width, 5um in height, and the number is 8; the aluminum fine gate formed by backside sintering and the N-type doped polysilicon layer form an ohmic contact, and no BSF layer will be formed.
  • Comparative Example 4 (The difference from Example 1 is that the UV laser is replaced with a green laser.)
  • An N-type Topcon battery comprising an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO x layer 7 and a SiN x Hy layer 8 from the inside to the outside, and the N-type substrate
  • the back side of 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the backside silver busbar 4 and the backside aluminum fine grid 5 are arranged on the SiN x Hy layer 8 on the back side.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation process of the N-type Topcon cell is: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ unwinding plating ⁇ front side AlOx layer and SiNxHy layer deposition ⁇ backside SiNxHy deposition ⁇ front/backside green laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 8 nm is deposited by PECVD.
  • x layer and SiN x Hy layer with a thickness of 80nm deposit a tunnel oxide layer with a thickness of 4nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 150nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 75 nm was deposited by PECVD;
  • the front silver busbar adopts a segmented design.
  • the front silver busbar is distributed in the aluminum fine grid line.
  • the number of grids is 112, the width is 32um, and the height is 18um; the length of each section of the front silver busbar is 5mm, the width is 1mm, the height is 6um, and the number of grids is 8;
  • D. Use weak burn-through aluminum paste printing and sintering on the back of the battery to form a local contact point H-type back aluminum thin grid electrode.
  • the number of aluminum thin grids on the back is 135, the width is 100um, and the height is 18um; the silver busbar on the back adopts Segmented design, each segment is 5mm in length, 1mm in width, 5um in height, and the number is 8; the aluminum fine gate formed by backside sintering and the N-type doped polysilicon layer form an ohmic contact, and no BSF layer will be formed.
  • Comparative Example 5 (The difference from Example 1 is that the number of aluminum fine grids on the front side is too small, only 60.)
  • An N-type Topcon battery comprising an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO x layer 7 and a SiN x Hy layer 8 from the inside to the outside, and the N-type substrate
  • the back side of 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the backside silver busbar 4 and the backside aluminum fine grid 5 are arranged on the SiN x Hy layer 8 on the back side.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation process of the N-type Topcon cell is: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ unwinding plating ⁇ Front side AlOx layer and SiNxH y layer deposition ⁇ back side SiNxHy deposition ⁇ front/back side UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 8 nm is deposited by PECVD.
  • x layer and SiN x Hy layer with a thickness of 80nm deposit a tunnel oxide layer with a thickness of 4nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 150nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 75 nm was deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 20um; the spot spacing is 350um, the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design.
  • the front silver busbar is distributed in the aluminum fine grid line.
  • the number of grids is 60, the width is 32um, and the height is 18um; the length of each section of the front silver busbar is 5mm, the width is 1mm, the height is 6um, and the number of grids is 8;
  • D. Use weak burn-through aluminum paste printing and sintering on the back of the battery to form a local contact point H-type back aluminum thin grid electrode.
  • the number of aluminum thin grids on the back is 135, the width is 100um, and the height is 18um; the silver busbar on the back adopts Segmented design, each segment is 5mm in length, 1mm in width, 5um in height, and the number is 8; the aluminum fine gate formed by backside sintering and the N-type doped polysilicon layer form an ohmic contact, and no BSF layer will be formed.
  • Comparative Example 6 (The difference from Example 1 is that the number of aluminum fine grids on the front side is too much, which is 140.)
  • An N-type Topcon battery comprising an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, an AlO x layer 7 and a SiN x Hy layer 8 from the inside to the outside, and the N-type substrate
  • the back side of 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and a SiN x Hy layer 8 from the inside to the outside.
  • the backside silver busbar 4 and the backside aluminum fine grid 5 are arranged on the SiN x Hy layer 8 on the back side.
  • the thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the back aluminum fine grid 5, and the rear silver busbar 4 are distributed in the backside aluminum fine grid 5 .
  • Contact grooves are provided on the AlOx layer 7 and SiNxHy layer 8 on the front side, and contact grooves are provided on the SiNxHy layer 8 on the back side.
  • the front-side aluminum fine grids 3 pass through the contact grooves to form local contact points 11 with the AlO x layer 7 .
  • the backside aluminum fine gates 5 pass through the contact grooves to form local contact points 11 with the N-type doped polysilicon layer 10 .
  • the preparation process of the N-type Topcon cell is: texturing ⁇ B diffusion ⁇ BSG removal ⁇ alkali polishing ⁇ backside LPCVD deposition of tunnel oxide layer and N-type doped polysilicon layer ⁇ backside P diffusion ⁇ PSG removal ⁇ unwinding plating ⁇ Front side AlOx layer and SiNxH y layer deposition ⁇ back side SiNxHy deposition ⁇ front/back side UV laser ablation ⁇ screen printing. Specifically include the following steps:
  • N-type double-sided cells before metallization N-type monocrystalline silicon wafer is used as the substrate.
  • the front side of the N-type silicon wafer is sequentially diffused through B to form a P-type doped region layer, and AlO with a thickness of 8 nm is deposited by PECVD.
  • x layer and SiN x Hy layer with a thickness of 80nm deposit a tunnel oxide layer with a thickness of 4nm on the back of the N-type silicon wafer by LPCVD in turn, and form an N-type doped polysilicon with a thickness of 150nm by LPCVD and P diffusion layer, a SiN x Hy layer with a thickness of 75 nm was deposited by PECVD;
  • UV laser ablation to remove part of the passivation dielectric film of AlO x layer and SiN x Hy layer on the front surface of the battery; use UV laser ablation to remove part of the passivation dielectric film of the SiN x Hy layer on the back of the battery;
  • the spot diameter is 20um; the spot spacing is 350um, the depth of the front ablation and removal is consistent with the thickness of the AlO x layer and the SiN x Hy layer, and the depth of the back ablation and removal is consistent with the thickness of the passivation dielectric film of the SiN x Hy layer on the back;
  • the front silver busbar adopts a segmented design.
  • the front silver busbar is distributed in the aluminum fine grid line.
  • the number of grids is 140, the width is 32um, and the height is 18um; the length of each section of the front silver busbar is 5mm, the width is 1mm, the height is 6um, and the number of grids is 8;
  • D. Use weak burn-through aluminum paste printing and sintering on the back of the battery to form a local contact point H-type back aluminum thin grid electrode.
  • the number of aluminum thin grids on the back is 135, the width is 100um, and the height is 18um; the silver busbar on the back adopts Segmented design, each segment is 5mm in length, 1mm in width, 5um in height, and the number is 8; the aluminum fine gate formed by backside sintering and the N-type doped polysilicon layer form an ohmic contact, and no BSF layer will be formed.
  • Table 1 is the performance parameters of each embodiment and comparative battery
  • Comparative Example 1 The difference between Comparative Example 1 and Example 1 is that there are no aluminum grid lines on the front and back, but silver grid lines are used.
  • the shading ratio of silver grid lines is low, so the current density increases; but at the same time, the metal compound increases, and the open circuit voltage is significantly reduced. , the corresponding performance is lower than that of Example 1.
  • Comparative Example 2 The difference between Comparative Example 2 and Example 1 is that the UV laser is not used on the front and back to open the film, the aluminum paste needs to be corroded by its own glass body, the damage to the passivation film is too large, the open circuit voltage and current density are reduced, and the corresponding The performance is lower than that of Example 1.
  • Comparative Example 3 The difference between Comparative Example 3 and Example 1 is that only the UV laser is used to open the film on the front side, and the aluminum paste on the back side needs to be corroded by its own glass body, and the damage to the passivation film on the back side is too large, and the open circuit voltage and current density are reduced. The corresponding performance is lower than that of Example 1.
  • Comparative Example 4 The difference between Comparative Example 4 and Example 1 is that the plasma UV laser is replaced by a green laser.
  • the green laser has stronger penetrating power and the ablation process will produce a larger heat-affected zone, open circuit voltage and current density. The decline is obvious, and the corresponding performance is lower than that of Example 1.
  • Comparative Example 5 The difference between Comparative Example 5 and Example 1 is that the number of front aluminum grid lines is too small and only 60, the fill factor decreases significantly, and the corresponding performance is lower than that of Example 1.
  • Comparative Example 6 The difference between Comparative Example 6 and Example 1 is that the number of front aluminum grid lines is too much to 140, and the current density and open circuit voltage are significantly reduced.
  • the raw materials and equipment used in the present invention are the common raw materials and equipment in the art; the methods used in the present invention, unless otherwise specified, are the conventional methods in the art.

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Abstract

本发明涉及太阳能电池技术领域，针对N型Topcon电池电极成本高及光电转化效率低的问题，提供了一种具有双面铝浆电极的N型Topcon电池及其制备方法，该电池的正面设有正面银主栅和正面铝细栅，背面设有背面银主栅和背面铝细栅；该电池的制备方法包括：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。本发明中正/背面采用铝浆印刷得到铝栅线和分段式银主栅；实现背面铝浆代替银浆，形成良好的场钝化效应，从而增加载流子的扩散长度，提升电池Voc，降低电池的制作成本。

Description

一种具有双面铝浆电极的N型Topcon电池及其制备方法 技术领域
本发明涉及太阳能电池技术领域，尤其是涉及一种具有双面铝浆电极的N型Topcon电池及其制备方法。
背景技术
Topcon太阳能电池(隧穿氧化层钝化接触，Tunnel Oxide Passivated Contact)是一种使用超薄氧化层作为钝化层结构的太阳电池。其中，N型Topcon电池在结构上，基体为N型Si，正面通过B扩散的方式得到P+掺杂层，并在正面通过ALD或是PECVD的方式沉积对应的AlO x/SiN x钝化介质膜；在背面通过LPCVD的方式沉积隧穿氧化层和多晶硅，并通过原位P掺杂或是本征P扩散的方式得到N+掺杂层；正背面通常采用丝网印刷的方式得到对应的金属电极，正面使用银铝浆，背面使用银浆；一方面相比于P型PERC电池，N型Topcon电池背面采用银浆，虽然能保证较高的双面率，但同时增加了电池的制造成本，因此为了同时满足N型Topcon电池提效和降本的原则，背面应尽可能减少银浆的使用；另一方面也应尽可能降低电池正面银浆的使用，才能较PERC电池在成本和效率上占据绝对的优势。
例如专利号CN202010483586.7，专利名称“一种N型Topcon太阳能电池的制作方法”，其涉及一种N型Topcon太阳能电池的制作方法，包括如下步骤：a、双面制绒：b、单面旋涂：c、单面氧化：在旋涂面形成一层含硼氧化硅层；d、形成重、轻掺杂区基底：使用掩模方式，在对应金属栅线位置形成保护重掺杂区的有机掩膜层；使用HF完全去除有机掩膜层覆盖区外的含硼氧化硅层及硼源，再去除有机掩膜层；e、完成重、轻掺杂：使用管式低压扩散法将旋涂的硼源完全推进硅基体中，形成重掺杂区；再进行整面通源沉积，形成轻掺杂区；最后进行高温氧化形成80-100nm厚度的BSG层；后按照正常后续工序进行。
其不足之处在于，仅有银栅作为传输介质，电池的光电转化效率低。
发明内容
本发明是为了克服N型Topcon电池电极成本高及光电转化效率低的问题，提供一种具有双面铝浆电极的N型Topcon电池及其制备方法，本发明中正/背面采用铝浆印刷得到铝栅线和分段式银主栅；通过调节浆料中的玻璃粉成分，使得浆料和掺杂N型掺杂多晶硅层之间只形成良好的欧姆接触，不形成BSF层，从而可以实现背面铝浆代替银浆，形成良好的场钝化效应，从而增加载流子的扩散长度，提升电池Voc，降低电池的制作成本。
为了实现上述目的，本发明采用以下技术方案：
一种具有双面铝浆电极的N型Topcon电池，电池包括N型衬底，N型衬底正面由内向外依 次设有P型掺杂区层、AlO x层及SiN xH y层，N型衬底的背面由内向外依次设有隧穿氧化层、N型掺杂多晶硅层及SiN xH y层，正面所述SiN xH y层上设有正面银主栅和正面铝细栅，背面所述SiN xH y层上设有背面银主栅和背面铝细栅。
上述电池的制备方法包括：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。
本发明电池结构中正面分别采用铝浆和少量银浆制得铝细栅和分段银主栅，铝细栅通过将收集的电流汇集至银主栅，同时银主栅满足焊接要求；背面分别采用铝浆和少量银浆制得铝细栅和分段银主栅，铝细栅通过将收集的电流汇集至银主栅，同时银主栅满足焊接要求；该方法一方面可以降低正背面银浆耗量，从而降低成本；另外一方面可以通过减少激光损伤，正表面形成前表面场，降低金属复合等方式提升电池Voc，电池效率优于双面银浆的电池效率。
作为优选，具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积AlO x层及SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积隧穿氧化层和多晶硅层，通过P扩散形成N型掺杂多晶硅层，PECVD沉积SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；
C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为106-122，宽度为25-40um，高度为10-25um；正面银主栅每段长度为2-8mm，宽0.1-2mm，高4-8um，根数为5-12；
D、在电池的背面使用弱烧穿型铝浆印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为110-160，宽度为40-160um，高度为10-25um；背面银主栅采用分段式设计，每段长度为2-8mm，宽0.1-2mm，高4-8um，根数为5-12。
相关现有技术中为了降低背面金属化的成本，当下部分研究者采用P型PERC电池背面金属化方式，即在背面通过激光消融的方式部分去除钝化介质膜，然后印刷铝浆，经过烧结形成具有欧姆接触的金属电极；该方式采用当下的绿光激光器消融会产生较大的激光光斑和边缘火山口，对钝化介质膜的损伤过大，导致钝化效果降低，影响电池的Voc，从而降低 电池效。
与现有制备工艺相比，本发明的正面通过UV激光消融去除部分AlO x层及SiN xH y层钝化膜且不损坏PN结、背面通过UV激光部分去除SiN xH y层钝化膜，且不损坏N型掺杂多晶硅层；本发明的正/背面金属电极的好处在于：(1)采用UV激光消融去除正表面部分AlO x层及SiN xH y层钝化膜，较绿光激光器消融，光斑直径小，且边缘几乎没有烧蚀火山口，最大限度的降低对钝化介质膜和电池PN结区的损伤；(2)采用UV激光消融去除背表面部分SiN xH y层钝化膜，较绿光激光器消融，光斑直径小，边缘几乎没有烧蚀火山口，最大限度的降低其对钝化介质膜的损伤，并且能精准控制能量的释放，保证N型掺杂多晶硅层不被损坏；(3)采用该方法制作正/背面金属电极，可以保证效率和双面银浆金属电极相当，但制作成本大幅度降。
作为优选，步骤A中，正面的AlO x层厚度为2-15nm，正面的SiN xH y层厚度为50-100nm；背面的隧穿氧化层的厚度为1-8nm，背面的N型掺杂多晶硅层厚度为100-200nm，背面的SiN xH y层厚度为50-100nm。
正面AlO x和SiN xH y增加正表面钝化效果和降低正表面反射率，背面隧穿氧化层为载流子选择性钝化，N性掺杂多晶硅主要是为了降低和背面电极的接触电阻，背面SiN xH y增加背表面钝化效果。设置该厚度范围是因为不同的膜层厚度需要同时兼具光学和电学的平衡，使得光电转换效率最大化。
作为优选，步骤B中，UV激光的光斑直径为10-30um；光斑间距为0-700um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致。
为了保证能够充分并及时收集和传输载流子，正/反面消融去膜深度必须与钝化膜层的厚度一致，这样才能保证正面铝细栅与P型掺杂区层充分接触、背面铝细栅与N型掺杂多晶硅层充分接触，使得电池的光电转化效率进一步提高。
作为优选，步骤D中，背面烧结形成的背面铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
铝细栅只和N型掺杂多晶硅层形成欧姆接触，铝浆不会继续穿透掺杂多晶硅层进入Si基体形成二次掺杂，所以不会形成BSF层。
所述的制备方法制备得到的具有双面铝浆电极的N型Topcon电池，正面银主栅的厚度小于正面铝细栅的厚度，正面银主栅分布于正面铝细栅中，背面银主栅的厚度小于背面铝细栅的厚度，背面银主栅分布于背面铝细栅中。
因为是先印刷银主栅，再印刷铝细栅，两者需要一个重叠部分才能将铝细栅收集的载流子汇集至银主栅，在高度上银主栅要低于铝细栅，该设计不会影响银主栅的焊接效果，进而提高载流子的流动效率，而且就电池的表面结构来说，避免了银主栅焊接结构的外凸，表面结构也更加平整，整个电池体积小巧，节省安装空间。
作为优选，正面的所述AlO x层及SiN xH y层上设有接触槽，背面的SiN xH y层上设有接触槽。
作为优选，正面铝细栅穿过所述接触槽与AlO x层形成局部接触点。
作为优选，背面铝细栅穿过所述接触槽与N型掺杂多晶硅层形成局部接触点。
通常，N型Topcon电池的背面金属电极直接采用银浆印刷制得，正面金属电极采用银铝浆印刷制的，相较于P型PERC电池制作成本高，效率优势无法凸显，即无法显著降低太阳能电池每瓦的制造成本，当下部分研究者针对N型Topcon电池正面银浆的使用问题，为了降低正面银浆的使用，先是印刷铝细栅，后再铝细栅上叠印银细栅；该方法虽然一定程度上降低了正面银浆的耗量，降低了电池的制作成本，但是为了满足上层银浆的烧结条件，烧结温度过高导致下层铝浆横向和纵向的拓展性增强，电池前表面的钝化效果降低，且遮光面积增加，导致电池效率无法达到预期的目标；因此，电池正面先是经过UV激光消融去除表面部分AlO x层及SiN xH y层钝化膜，然后分别采用铝浆和少量银浆印刷得到细栅线和分段式银主栅；电池背面同样是先经过UV激光消融去除表面部分SiN xH y层，因为通过激光基准控制不损坏N型掺杂多晶硅层，然后分别采用铝浆和少量银浆印刷得到细栅线和分段式银主栅，本发明的电池结构具有以下优势：(1)正面直接采用铝浆印刷得到铝栅线，一方面可以在正表面形成N型掺杂多晶硅层，形成良好的场钝化效应，从而增加载流子的扩散长度，提升电池Voc；另一方面可以大幅度的降低正面电极的制作成本；(2)背面直接采用铝浆印刷得到铝栅线，通过调节浆料中的玻璃粉成分，使得浆料和掺杂N型掺杂多晶硅层之间只形成良好的欧姆接触，不形成BSF层，从而可以实现背面铝浆代替银浆，降低背面的电极制作成本；(3)正/背面采用铝浆进行电极的制作，避免Si的深能级杂质Ag的进入造成过大的金属复合，即J 0,metal过大，从而提升电池Voc和电池转化效率低。
因此，本发明具有如下有益效果：
(1)通过在电池结构中正/背面采用铝浆和少量银浆制得铝细栅和分段银主栅，铝细栅通过将收集的电流汇集至银主栅，同时银主栅满足焊接要求；
(2)加工过程中采用UV激光消融去除正表面部分AlO x层及SiN xH y层钝化膜，较绿光激光器消融，光斑直径小，且边缘几乎没有烧蚀火山口，最大限度的降低对钝化介质膜和电池PN 结区的损伤，降低对电池表面涂层的损伤；
(3)该电池结构一方面可以降低正背面银浆耗量，从而降低成本；另外一方面可以通过减少激光损伤，正表面形成前表面场，降低金属复合等方式提升电池Voc，电池效率优于双面银浆的电池效率。
附图说明
图1是本发明的一种电池结构示意图。
图2是本发明的一种电池正面栅线结构示意图。
图3是本发明的一种电池背面栅线结构示意图。
图中：1、N型衬底；2、正面银主栅；3、正面铝细栅；4、背面银主栅；5、背面铝细栅；6、P型掺杂区层；7、AlO x层；8、SiN xH y层；9、隧穿氧化层；10、N型掺杂多晶硅层；11、局部接触点。
具体实施方式
下面结合具体实施方式对本发明做进一步的描述。
总实施例
如图1-3所示，一种具有双面铝浆电极的N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的具有双面铝浆电极的N型Topcon电池的制备方法，制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。包括如下具体制备步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为2-15nm的AlO x层及厚度为50-100nm的厚度为50-100nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为1-8mm 的隧穿氧化层，通过LPCVD和P扩散形成厚度为100-200nm的N型掺杂多晶硅层，PECVD沉积厚度为50-100nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为10-30um；光斑间距为0-700um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆(Al 60-80wt％，Si≤40wt％，玻璃粉≤5wt％，树脂≤5wt％；加有机溶剂调节粘度为20-25Pa.s)印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为106-122，宽度为25-40um，高度为10-25um；正面银主栅每段长度为2-8mm，宽0.1-2mm，高4-8um，根数为5-12；
D、在电池的背面使用弱烧穿型铝浆(Al 60-80wt％，Si≤40wt％，玻璃粉≤5wt％，树脂≤5wt％；加有机溶剂调节粘度为20-25Pa.s)印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为110-160，宽度为40-160um，高度为10-25um；背面银主栅采用分段式设计，每段长度为2-8mm，宽0.1-2mm，高4-8um，根数为5-12；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
实施例1
如图1所示，一种具有双面铝浆电极的N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，如图2所示，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，如图3所示，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的具有双面铝浆电极的N型Topcon电池的制备方法，制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。 具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为2nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nmSiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为20um；光斑间距为350um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为112，宽度为32um，高度为18um；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、在电池的背面使用弱烧穿型铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为135，宽度为100um，高度为18um；背面银主栅采用分段式设计，每段长度为5mm，宽1mm，高5um，根数为8；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
实施例2
如图1所示，一种具有双面铝浆电极的N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，如图21所示，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，如图3所示，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的具有双面铝浆电极的N型Topcon电池的制备方法，制备流程为：制绒→B扩 散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为15nm的AlO x层及厚度为50nm的厚度为100nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为1nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为200nm的N型掺杂多晶硅层，PECVD沉积厚度为100nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为10um；光斑间距为700um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为106，宽度为40um，高度为10um；正面银主栅每段长度为8mm，宽0.1mm，高8um，根数为5；
D、在电池的背面使用弱烧穿型铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为110，宽度为160um，高度为10um；背面银主栅采用分段式设计，每段长度为8mm，宽0.1mm，高8um，根数为5；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
实施例3
如图1所示，一种具有双面铝浆电极的N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，如图2所示，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，如图3所示，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细 栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的具有双面铝浆电极的N型Topcon电池的制备方法，制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为2nm的AlO x层及厚度为50nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为8nm的隧穿氧化，通过LPCVD和P扩散形成厚度为100nm的N型掺杂多晶硅层，PECVD沉积厚度为60nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为30um；光斑间距为0um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为122，宽度为25um，高度为25um；正面银主栅每段长度为2mm，宽2mm，高4um，根数为12；
D、在电池的背面使用弱烧穿型铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为160，宽度为40um，高度为10um；背面银主栅采用分段式设计，每段长度为8mm，宽0.1mm，高8um，根数为12；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
实施例4
如图1所示，一种具有双面铝浆电极的N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，如图2所示，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，如图3所示，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中， 背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的具有双面铝浆电极的N型Topcon电池的制备方法，制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为4nm的AlO x层及厚度为60nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为2nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为120nm的N型掺杂多晶硅层，PECVD沉积厚度为80nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为25um；光斑间距为100um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为112，宽度为30um，高度为20um；正面银主栅每段长度为4mm，宽0.5mm，高5um，根数为7；
D、在电池的背面使用弱烧穿型铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为125，宽度为55um，高度为15um；背面银主栅采用分段式设计，每段长度为4mm，宽0.8mm，高5um，根数为7；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
实施例5
如图1所示，一种具有双面铝浆电极的N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，如图2所示，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，如图3所示，背面所述SiN xH y层8上设有背面银 主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的具有双面铝浆电极的N型Topcon电池的制备方法，制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为12nm的AlO x层及厚度为90nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为3nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为180nm的N型掺杂多晶硅层，PECVD沉积厚度为90nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为15um；光斑间距为650um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为120，宽度为35um，高度为22um；正面银主栅每段长度为6mm，宽1.6mm，高6.5um，根数为10；
D、在电池的背面使用弱烧穿型铝浆(Al 65wt％，Si 25wt％，玻璃粉5wt％，树脂5wt％；加有机溶剂调节粘度为20Pa.s)印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为150，宽度为150um，高度为15um；背面银主栅采用分段式设计，每段长度为6.5mm，宽1.8mm，高6um，根数为10；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
对比例1(与实施例1的区别在于，正/反面均未设有铝栅线。)
一种N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶 硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2，背面所述SiN xH y层8上设有背面银主栅4。
所述N型Topcon电池的制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为4nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；
C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、在电池的背面银主栅采用分段式设计，每段长度为5mm，宽1mm，高5um，根数为8。
对比例2(与实施例1的区别在于，未在电池正面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；也未在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜。)
一种N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的N型Topcon电池的制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B 扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为4nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nm的SiN xH y层；
C、正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为112，宽度为32um，高度为18um；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、背面铝细栅根数为135，宽度为100um，高度为18um；背面银主栅采用分段式设计，每段长度为5mm，宽1mm，高5um，根数为8。
对比例3(与实施例1的区别在于，仅在电池正面使用UV激光消融去除部分SiN xH y层钝化介质膜。)
一种N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
电池的制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为4nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为20um；光斑间距为350um，正面消融去膜深度与SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅 采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为112，宽度为32um，高度为18um；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、在电池的背面使用弱烧穿型铝浆印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为135，宽度为100um，高度为18um；背面银主栅采用分段式设计，每段长度为5mm，宽1mm，高5um，根数为8；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
对比例4(与实施例1的区别在于，将UV激光替换成绿光激光。)
一种N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述N型Topcon电池的制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面绿光激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为4nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用绿光激光消融去除部分SiN xH y层钝化介质膜；绿光激光的光斑直径为20um；光斑间距为350um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为112，宽度为32um，高度为18um；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、在电池的背面使用弱烧穿型铝浆印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为135，宽度为100um，高度为18um；背面银主栅采用分段式设计，每段长度为5mm，宽1mm，高5um，根数为8；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
对比例5(与实施例1的区别在于，正面铝细栅根数过少仅为60。)
一种N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的N型Topcon电池的制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为4nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为20um；光斑间距为350um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为60，宽度为32um，高度为18um；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、在电池的背面使用弱烧穿型铝浆印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为135，宽度为100um，高度为18um；背面银主栅采用分段式设计，每段长度为 5mm，宽1mm，高5um，根数为8；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
对比例6(与实施例1的区别在于，正面铝细栅根数过多为140。)
一种N型Topcon电池，包括N型衬底1，N型衬底1正面由内向外依次设有P型掺杂区层6、AlO x层7及SiN xH y层8，N型衬底1的背面由内向外依次设有隧穿氧化层9、N型掺杂多晶硅层10及SiN xH y层8，正面所述SiN xH y层8上设有正面银主栅2和正面铝细栅3，背面所述SiN xH y层8上设有背面银主栅4和背面铝细栅5。
正面银主栅2的厚度小于正面铝细栅3的厚度，正面银主栅2分布于正面铝细栅3中，背面银主栅4的厚度小于背面铝细栅5的厚度，背面银主栅4分布于背面铝细栅5中。正面的所述AlO x层7及SiN xH y层8上设有接触槽，背面的SiN xH y层8上设有接触槽。正面铝细栅3穿过所述接触槽与AlO x层7形成局部接触点11。背面铝细栅5穿过所述接触槽与N型掺杂多晶硅层10形成局部接触点11。
所述的N型Topcon电池的制备流程为：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和N型掺杂多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。具体包括如下步骤：
A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积厚度为8nm的AlO x层及厚度为80nm的SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积厚度为4nm的隧穿氧化层，通过LPCVD和P扩散形成厚度为150nm的N型掺杂多晶硅层，PECVD沉积厚度为75nm的SiN xH y层；
B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；UV激光的光斑直径为20um；光斑间距为350um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致；
C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为140，宽度为32um，高度为18um；正面银主栅每段长度为5mm，宽1mm，高6um，根数为8；
D、在电池的背面使用弱烧穿型铝浆印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为135，宽度为100um，高度为18um；背面银主栅采用分段式设计，每段长度为5mm，宽1mm，高5um，根数为8；背面烧结形成的铝细栅和N型掺杂多晶硅层形成欧姆接触，不会形成BSF层。
表1为各实施例和对比例电池的各项性能参数
Figure PCTCN2021095755-appb-000001
结论分析：综合实施例1-5的结果可以看出，只有采用本发明的结构所制备出来的N型Topcon电池结构才具有较高的电池效率与电流密度，具有较高的太阳光转化效率，极大降低太阳光的折损率，同时极大节约的电池的制造成本。
对比例1与实施例1的区别在于，正背面未设有铝栅线，而是用银栅线，银栅线遮光比例较低，因此电流密度增加；但同时金属复合增加，开路电压明显降低，相应的性能相对实施例1有所下降。
对比例2与实施例1的区别在于，正背面未使用UV激光进行开膜，铝浆需要通过自身的玻璃体进行腐蚀，对钝化膜的损伤过大，开路电压和电流密度均降低，相应的性能相对实施例1有所下降。
对比例3与实施例1的区别在于，仅在正面使用UV激光进行开膜，背面的铝浆需要通过自身的玻璃体进行腐蚀，对背面钝化膜损伤过大，开路电压和电流密度均降低，相应的性能相对实施例1有所下降。
对比例4与实施例1的区别在于，浆UV激光替换成绿激光，绿光激光具有更强的穿透力以及烧蚀过程会对膜层产生更大的热影响区，开路电压和电流密度下降明显，相应的性能相对实施例1下降。
对比例5与实施例1的区别在于，正面铝栅线的根数过少仅为60根，填充因子下降明显，相应的性能相对实施例1下降。
对比例6与实施例1的区别在于，正面铝栅线的根数过多为140根，电流密度和开路电压明显下降，虽然填充因子提升明显，但最终相应的性能相对实施例1下降。
由实施例1-5以及比较例1-6的数据可知，只有在本发明权利要求范围内的方案，才能够在各方面均能满足上述要求，得出最优化的方案，得到最优的性能的具有双面铝浆电极 的N型Topcon电池。而对于各沉积层的替换/加减，或者制备顺序的改变，均会带来相应的负面影响。
本发明中所用原料、设备，若无特别说明，均为本领域的常用原料、设备；本发明中所用方法，若无特别说明，均为本领域的常规方法。
以上所述，仅是本发明的较佳实施例，并非对本发明作任何限制，凡是根据本发明技术实质对以上实施例所作的任何简单修改、变更以及等效变换，均仍属于本发明技术方案的保护范围。

Claims (9)

  1. 一种具有双面铝浆电极的N型Topcon电池的制备方法，其特征是，所述N型Topcon电池包括N型衬底(1)，N型衬底(1)正面由内向外依次设有P型掺杂区层(6)、AlO x层(7)及SiN xH y层(8)，N型衬底(1)的背面由内向外依次设有隧穿氧化层(9)、N型掺杂多晶硅层(10)及SiN xH y层(8)，正面所述SiN xH y层(8)上设有正面银主栅(2)和正面铝细栅(3)，背面所述SiN xH y层(8)上设有背面银主栅(4)和背面铝细栅(5)；
    所述电池的制备方法包括：制绒→B扩散→去BSG→碱抛光→背面LPCVD沉积隧穿氧化层和多晶硅层→背面P扩散→去PSG→去绕镀→正面AlO x层和SiN xH y层沉积→背面SiN xH y沉积→正/背面UV激光消融→丝网印刷。
  2. 根据权利要求1所述的制备方法，其特征是，具体包括如下步骤：
    A、金属化前的N型双面电池制备，采用N型单晶硅片为基底，N型硅片的正面依次通过B扩散形成P型掺杂区层，PECVD的方式沉积AlO x层及SiN xH y层，在N型硅片的背面依次通过LPCVD的方式沉积隧穿氧化层和多晶硅层，通过P扩散形成N型掺杂多晶硅层，PECVD沉积SiN xH y层；
    B、在电池的正表面使用UV激光消融去除部分AlO x层及SiN xH y层钝化介质膜；在电池的背面使用UV激光消融去除部分SiN xH y层钝化介质膜；
    C、在电池的正表面使用铝浆印刷烧结形成局部接触点H型正面铝细栅线电极，正面银主栅采用分段式设计，正面银主栅分布于铝细栅线中，正面铝细栅根数为106-122，宽度为25-40um，高度为10-25um；正面银主栅每段长度为2-8mm，宽0.1-2mm，高4-8um，根数为5-12；
    D、在电池的背面使用弱烧穿型铝浆印刷烧结形成局部接触点H型背面铝细栅线电极，背面铝细栅根数为110-160，宽度为40-160um，高度为10-25um；背面银主栅采用分段式设计，每段长度为2-8mm，宽0.1-2mm，高4-8um，根数为5-12。
  3. 根据权利要求1或2所述的制备方法，其特征是，正面的AlO x层厚度为2-15nm，正面的SiN xH y层厚度为50-100nm；背面的隧穿氧化层的厚度为1-8nm，背面的N型掺杂多晶硅层厚度为100-200nm，背面的SiN xH y层厚度为50-100nm。
  4. 根据权利要求2所述的制备方法，其特征是，步骤B中，UV激光的光斑直径为10-30um；光斑间距为0-700um，正面消融去膜深度与AlO x层及SiN xH y层厚度一致，背面消融去膜深度与背面SiN xH y层钝化介质膜的厚度一致。
  5. 根据权利要求1或2所述的制备方法，其特征是，所述背面铝细栅和N型掺杂多晶硅层形成欧姆接触。
  6. 根据权利要求1-5任一所述的制备方法制备得到的具有双面铝浆电极的N型Topcon电池，其特征是，正面银主栅(2)的厚度小于正面铝细栅(3)的厚度，正面银主栅(2)分布于正面铝细栅(3)中，背面银主栅(4)的厚度小于背面铝细栅(5)的厚度，背面银主栅(4)分布于背面铝细栅(5)中。
  7. 根据权利要求6所述的电池，其特征是，正面的所述AlO x层(7)及SiN xH y层(8)上设有接触槽，背面的SiN xH y层(8)上设有接触槽。
  8. 根据权利要求7所述的电池，其特征是，正面铝细栅(3)穿过所述接触槽与AlO x层(7)形成局部接触点(11)。
  9. 根据权利要求7所述的电池，其特征是，背面铝细栅(5)穿过所述接触槽与N型掺杂多晶硅层(10)形成局部接触点(11)。
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