CN107230733A - 一种纳米线异质结太阳能电池及其制备方法 - Google Patents
一种纳米线异质结太阳能电池及其制备方法 Download PDFInfo
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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Abstract
本发明公开一种纳米线异质结太阳能电池及其制备方法,其特征在于,所述太阳能电池包括由下到上依次设置的背电极层,衬底层,阻挡层,纳米线层,活性层,正电极层,所述活性层的材料为二氧化钛或氢化非晶硅,该太阳能电池可以抑制异质结纳米线太阳能电池表面复合效率,从而提高太阳能电池效率。
Description
技术领域
本发明涉及一种太阳能电池领域,具体涉及一种纳米线异质结太阳能电池及其制备方法。
背景技术
近年来,随着人们对能源需求不断增加,作为可再生能源之一的太阳能引起越来越多的关注。太阳能电池将光能转化为电能逐渐成为研究的热点。晶体硅电池作为第一代太阳能电池,具有良好的转换效率,原材料丰富,无毒,但是晶体硅电池的制备能量回收期长,使晶体硅太阳能电池实现大范围的应用成本较低,随后,出现了以较低成本为特征的第二代薄膜电池,其中之一的硅薄膜电池相对于晶体硅电池,其明显的优势就是降低了电池的制备成本,但是硅薄膜电池的转换效率相对于硅电池较低。
2μm Si纳米线能够吸收近90%的入射光。而Si衬底则需要200μm。因此纳米线太阳能能电池结构能够减少材料的使用,大幅度降低成本。但是目前纳米线太阳能电池的效率还不能和其衬底材料的性能相比拟,主要的原因就是纳米线引入表面复合降低了它的电学性能,最终导致其效率不如衬底材料。
发明内容
有鉴于此,本申请提供一种可以抑制异质结纳米线太阳能电池表面复合效率,从而提高太阳能电池效率的纳米线太阳能电池及其制备方法。
为解决以上技术问题,本发明提供的技术方案是一种纳米线异质结太阳能电池,其特征在于,所述太阳能电池包括由下到上依次设置的背电极层,衬底层,阻挡层,纳米线层,活性层,正电极层,所述活性层的材料为二氧化钛或氢化非晶硅。
优选的,所述衬底层的材料为磷化铟。
选用磷化铟作为衬底层的材料是因为磷化铟与硅和砷化镓相比具有相对低的表面复合效率和最佳的带隙。
优选的,所述阻挡层的材料为二氧化硅。
优选的,所述阻挡层厚度为20~40nm。
更优选的,所述阻挡层的厚度为30nm。
优选的,所述阻挡层上设置有周期性圆形纳米孔,所述纳米孔的直径为120~160nm,周期为250~350nm。
更优选的,所述纳米孔的直径为140nm,周期为300nm。
优选的,所述纳米线的材料为磷化铟,所述纳米线层中纳米线的直径为130~200nm。
更优选的,所述纳米线采用二乙基锌作为p型掺杂源,所述纳米线的直径为150nm。
优选的,所述活性层的材料为二氧化钛层时厚度为5~50nm,所述活性层的材料为氢化非晶硅时厚度为10~100nm。
更优选的,所述活性层的材料为二氧化钛层时厚度为5~30nm,所述活性层的材料为氢化非晶硅时厚度为20~80nm。
优选的,所述背电极层的材料为Ti/Au或者Ti/Ag金属,厚度为100nm,所述正电极层的材料为ITO,厚度为100nm。
更优选的,所述背电极层的材料为Ti/Au或者Ti/Ag金属,Ti的厚度为10nm,Au或Ag的厚度为90nm。
本发明还提供了一种纳米线异质结太阳能电池的制备方法,其特征在于,所述制备方法包括:
(1)提供一衬底层,所述衬底层的材料为p型磷化铟;
(2)在所述衬底层上生长一层阻挡层,在所述阻挡层上形成周期性圆形纳米孔;
(3)在所述阻挡层的圆形纳米孔上生长纳米线层;
(4)在所述纳米层上生长活性层;
(5)在所述活性层上生长正电极层;
(6)在所述衬底层下生长背电极层。
(7)封装成电池成品。
优选的,所述阻挡层采用等离子体增强的化学气相沉积法或原子层沉积方法生长,所述纳米孔采用电子束曝光方法形成,所述纳米线层采用选择区域外延法生长,所述活性层采用原子层沉积方法或等离子体增强化学的气相沉积法生长,所述正电极层和所述背电极层采用电子束蒸发或磁控溅射等蒸镀方法生长。
更优选的,所述阻挡层的生长可以采用等离子体增强的化学气相沉积法或原子层沉积方法,当采用等离子体增强的化学气相沉积法生长时,沉积温度为250℃,当采用原子层沉积方法生长时,沉积温度为75℃。所述纳米线层采用选择区域外延法生长,生长设备为分子束外延生长设备或者金属有机化合物化学气相沉淀系统,磷化铟纳米线的生长采用三甲基铟和磷源,生长速度分别为6.07×10-6mol/min和4.91×10-4mol/min,采用二乙基锌作为p型掺杂源,掺杂速率为2.06×10-5mol/min。
更优选的,所述活性层的材料可以为二氧化钛或者氢化非晶硅,当活性层材料为二氧化钛时,采用原子层沉积法生长,厚度为5-30nm,生长温度为100-300℃;当活性层材料为氢化非晶硅时,采用等离子体增强的化学气相沉积法生长,厚度为20-80nm,生长温度为200-350℃。
本申请与现有技术相比,其详细说明如下:
本发明提供一种磷化铟异质结太阳能电池,该电池主要包括p型纳米线,n型的二氧化钛或氢化非晶硅,由于磷化铟材料本身也是一种具有相对低(相对于Si,GaAs)的表面复合率,并且其具有最佳的带隙,因此本申请中衬底层和纳米线均采用磷化铟材料,同时本申请中采用二氧化钛和氢化非晶硅作为活性层,二氧化钛和氢化非晶硅不仅能够充当活性的n掺杂层,并且能够抑制纳米线的表面复合的缺点。采用此方法能够利用纳米线的高吸收特性而抑制其表面复合,从而大幅度提高纳米线太阳电池的效率。此外,本申请中的纳米线层采用选择区域外延法生长,采用该方法能够避免金属杂质的引入,从而避免了金属作为缺陷,在半导体中引起复合从而降低效率。综上所述,本发明提供的纳米线异质结太阳能电池解决了现有技术中由于纳米线引入而导致表面复合从而降低电池效率的问题。
附图说明
图1为本申请提供的纳米线太阳能电池中所述衬底层上形成的的阻挡层层图案结构示意图;图a为侧视图,图b为顶视图。
图2是本申请提供的纳米线太阳能电池的成品结构示意图;图a为侧视图,图b为顶视图。
具体实施方式
为了使本领域的技术人员更好地理解本发明的技术方案,下面结合具体实施例对本发明作进一步的详细说明。
本申请所述的一种纳米线异质结太阳能电池,如图2所示,包括依次设置的背电极层6,衬底层1,阻挡层2,纳米线层3,活性层4,正电极层5,其中所述衬底层1的材料为磷化铟,所述阻挡层的材料为二氧化硅,厚度为30nm,在二氧化硅上形成周期性的圆形纳米孔,所述纳米孔的直径为d为140nm,周期为300nm,所述纳米线层中纳米线的直径为150nm,所述活性层为二氧化钛或者氢化非晶硅,二氧化钛的厚度为5-30nm,氢化非晶硅的厚度为20-80nm,背电极层的材料为Ti/Au或者Ti/Ag金属,厚度为100nm。
其制备方法包括以下步骤:
(1)提供一衬底层1,所述衬底层的材料为磷化铟;
(2)在所述衬底层上生长阻挡层层2,在所述阻挡层上生长周期性的圆形纳米孔;
(3)在所述阻挡层的圆形纳米孔上生长纳米线层3;
(4)在所述纳米线层3上生长活性层4,所述活性层的材料为二氧化钛或氢化非晶硅;
(5)在所述活性层4上生长正电极层5;
(6)在所述衬底层1下生长背电极层6;
(7)封装形成电池成品。
为了验证本申请技术方案的技术效果,在上述具体实施方式要求的基础上,采用具体参数进行试验验证,得到以下具体实施例。
实施例1
如图2所示,本实施例所述的一种纳米线异质结太阳能电池,包括依次设置的背电极层6,衬底层1,阻挡层2,纳米线层3,活性层4,正电极层5。
其制备方法如下:
(1)提供p型InP衬底层1;
(2)在所述衬底层1上采用PECVD方法生长一层SiO2层2,沉积温度为250℃,厚度为30nm。
(3)在所述SiO2层2上形成周期性的圆形纳米孔,所述纳米孔的形成采用电子束曝光方法,所述纳米孔的直径为d为140nm,周期为300nm,所述纳米孔为周期性六角对称图形。
(4)在所述SiO2层2上的圆形纳米孔内采用选择区域外延法(SAE)生长纳米线层3,所述纳米线的材料为InP,所述纳米线层的生长设备为MOCVD系统,所述纳米线的直径为150nm,采用二乙基锌作为p型掺杂源,掺杂速率为2.06×10-5mol/min,所述InP纳米线的生长采用三甲基铟和磷源,速率分别为6.07×10-6mol/min和4.91×10-4mol/min。
(5)在所述纳米线层3上采用ALD方法生长TiO2层4,所述二氧化钛层厚度为5nm,生长温度为300℃。
(6)在所述TiO2层4上采用电子束蒸发蒸镀方法生长一层ITO层5作为正电极层,厚度为100nm。
(7)在所述衬底层1下面采用电子束蒸发蒸镀方法生长一层背电极层6,采用Ti/Au金属,厚度为10/90nm。
(8)封装形成磷化铟纳米线异质结太阳能电池产品。
实施例2
基于实施例1,实施例2在以下步骤参数设置不同:
步骤(5)具体为在所述纳米线层3采用ALD方法生长TiO2层4,所述二氧化钛层厚度为5nm,生长温度为100℃。
实施例3
基于实施例1,实施例3在以下步骤参数设置不同:
步骤(5)具体为在所述纳米线层3采用ALD方法生长TiO2层4,所述二氧化钛层厚度为30nm,生长温度为100℃。
实施例4
基于实施例1,实施例4在以下步骤参数设置不同:
步骤(5)具体为在所述纳米线层3采用ALD方法生长TiO2层4,所述二氧化钛层厚度为50nm,生长温度为200℃。
实施例5
基于实施例1,实施例5在以下步骤参数设置不同:
步骤(4)具体为在所述SiO2层2上的圆形纳米孔内采用选择区域外延法(SAE)生长纳米线层3,所述纳米线的材料为InP,所述纳米线层的生长设备为MBE系统,所述纳米线的直径为180nm,采用二乙基锌作为p型掺杂源,掺杂速率为2.06×10-5mol/min,所述InP纳米线的生长采用三甲基铟和磷源,速率分别为6.07×10-6mol/min和4.91×10-4mol/min。
(5)在所述纳米线层3上采用PECVD方法生长氢化非晶硅层4,所述氢化非晶硅层厚度为20nm,生长温度为200℃。
实施例6
基于实施例1,实施例6在以下步骤参数设置不同:
步骤(4)具体为在所述SiO2层2上的圆形纳米孔内采用选择区域外延法(SAE)生长纳米线层3,所述纳米线的材料为InP,所述纳米线层的生长设备为MBE系统,所述纳米线的直径为130nm,采用二乙基锌作为p型掺杂源,掺杂速率为2.06×10-5mol/min,所述InP纳米线的生长采用三甲基铟和磷源,速率分别为6.07×10-6mol/min和4.91×10-4mol/min。
(5)在所述纳米线层3上采用PECVD方法生长氢化非晶硅层4,所述氢化非晶硅层厚度为80nm,生长温度为350℃。
实施例7
基于实施例1,实施例7在以下步骤参数设置不同:
步骤(4)具体为在所述SiO2层2上的圆形纳米孔内采用选择区域外延法(SAE)生长纳米线层3,所述纳米线的材料为InP,所述纳米线层的生长设备为MBE系统,所述纳米线的直径为200nm,采用二乙基锌作为p型掺杂源,掺杂速率为2.06×10-5mol/min,所述InP纳米线的生长采用三甲基铟和磷源,速率分别为6.07×10-6mol/min和4.91×10-4mol/min。
(5)在所述纳米线层3上采用PECVD方法生长氢化非晶硅层4,所述氢化非晶硅层厚度为100nm,生长温度为300℃。
实施例8
基于实施例1,实施例8在以下步骤参数设置不同:
步骤(4)具体为在所述SiO2层2上的圆形纳米孔内采用选择区域外延法(SAE)生长纳米线层3,所述纳米线的材料为InP,所述纳米线层的生长设备为MBE系统,所述纳米线的直径为130nm,采用二乙基锌作为p型掺杂源,掺杂速率为2.06×10-5mol/min,所述InP纳米线的生长采用三甲基铟和磷源,速率分别为6.07×10-6mol/min和4.91×10-4mol/min。
(5)在所述纳米线层3上采用PECVD方法生长氢化非晶硅层4,所述氢化非晶硅层厚度为10nm,生长温度为200℃。
实施例9
基于实施例1,实施例9在以下步骤参数设置不同:
步骤(2)具体为在所述衬底层1上采用ALD方法生长一层SiO2层2,沉积温度为75℃,厚度为30nm。
步骤(3)具体为在所述SiO2层2上形成周期性的圆形纳米孔,所述纳米孔的形成采用电子束曝光方法,所述纳米孔的直径为d为120nm,周期为250nm,所述纳米孔为周期性六角对称图形。
实施例10
基于实施例1,实施例10在以下步骤参数设置不同:
步骤(2)具体为在所述衬底层1上采用ALD方法生长一层SiO2层2,沉积温度为75℃,厚度为30nm。
步骤(3)具体为在所述SiO2层2上形成周期性的圆形纳米孔,所述纳米孔的形成采用电子束曝光方法,所述纳米孔的直径为d为160nm,周期为350nm,所述纳米孔为周期性六角对称图形。
实施例11
基于实施例1,实施例11在以下步骤参数设置不同:
步骤(6)具体在所述TiO2层4上采用磁控溅射蒸镀方法生长一层ITO层5作为正电极层,厚度为100nm。
步骤(7)具体为在所述衬底层1下面采用电磁控溅射蒸镀方法生长一层背电极层6,采用Ti/Ag金属,厚度为10/90nm。
实施例12
对实施例1——11制备得的太阳能电池进行参数测定,各实施例的电池所测试得到的参数如表1所示,表中Voc代表开路电压(V),Jsc代表短路电流(mA/cm2),FF代表填充因子(%),Eff代表光电转换效率(%)。
表1各实施例的电池参数
实施例 | Voc | Jsc | FF | Eff |
1 | 0.73 | 32.1 | 0.8 | 18.74 |
2 | 0.72 | 33 | 0.79 | 17.77 |
3 | 0.75 | 35.4 | 0.81 | 21.5 |
4 | 0.73 | 34.6 | 0.79 | 19.95 |
5 | 0.74 | 30 | 0.72 | 15.95 |
6 | 0.74 | 31.2 | 0.74 | 17.08 |
7 | 0.76 | 31.2 | 0.8 | 18.97 |
8 | 0.69 | 28.2 | 0.73 | 14.2 |
9 | 0.7 | 29.8 | 0.75 | 15.64 |
10 | 0.73 | 31.1 | 0.76 | 17.88 |
11 | 0.74 | 32.1 | 0.78 | 18.67 |
由表1中的数据可以看出,本发明提供的纳米线异质结太阳能电池的效率有了明显提高,目前的异质结纳米线太阳电池(基于硅材料)的效率为13%左右,本申请中的太阳能电池均达到了15%以上,最高可以达到21.5%。
以上仅是本发明的优选实施方式,应当指出的是,上述优选实施方式不应视为对本发明的限制,本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的普通技术人员来说,在不脱离本发明的精神和范围内,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种纳米线异质结太阳能电池,其特征在于,所述太阳能电池包括由下到上依次设置的背电极层,衬底层,阻挡层,纳米线层,活性层,正电极层,所述活性层的材料为二氧化钛或氢化非晶硅。
2.根据权利要求1所述的纳米线异质结太阳能电池,其特征在于,所述衬底层的材料为磷化铟。
3.根据权利要求1所述的纳米线异质结太阳能电池,其特征在于,所述阻挡层的材料为二氧化硅。
4.根据权利要求1所述的纳米线异质结太阳能电池,其特征在于,所述阻挡层厚度为20~40nm。
5.根据权利要求1所述的纳米线异质结太阳能电池,其特征在于,所述阻挡层上设置有周期性圆形纳米孔,所述纳米孔的直径为120~160nm,周期为250~350nm。
6.根据权利要求1所述的纳米线异质结太阳能电池,其特征在于,所述纳米线的材料为磷化铟,所述纳米线层中纳米线的直径为130~200nm。
7.根据权利要求1所述的纳米线异质结太阳能电池,其特征在于,所述活性层的材料为二氧化钛层时厚度为5~50nm,所述活性层的材料为氢化非晶硅时厚度为10~100nm。
8.根据权利要求1所述纳米线异质结太阳能电池,其特征在于,所述背电极层的材料为Ti/Au或者Ti/Ag金属,厚度为100nm,所述正电极层的材料为ITO,厚度为100nm。
9.一种纳米线异质结太阳能电池的制备方法,其特征在于,所述制备方法包括:
(1)提供一衬底层,所述衬底层的材料为p型磷化铟;
(2)在所述衬底层上生长一层阻挡层,在所述阻挡层上形成周期性圆形纳米孔;
(3)在所述阻挡层的圆形纳米孔上生长纳米线层;
(4)在所述纳米层上生长活性层;
(5)在所述活性层上生长正电极层;
(6)在所述衬底层下生长背电极层;
(7)封装成电池成品。
10.根据权利要求9所述的制备方法,其特征在于,所述阻挡层采用等离子体增强的化学气相沉积法或原子层沉积方法生长,所述纳米孔采用电子束曝光方法形成,所述纳米线层采用选择区域外延法生长,所述活性层采用原子层沉积方法或等离子体增强化学的气相沉积法生长,所述正电极层和所述背电极层采用电子束蒸发或磁控溅射等蒸镀方法生长。
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CN110246907A (zh) * | 2019-07-12 | 2019-09-17 | 通威太阳能(成都)有限公司 | 一种具有提升异质结太阳电池光电转换效率的电池结构 |
CN110265502A (zh) * | 2019-06-13 | 2019-09-20 | 深圳市科创数字显示技术有限公司 | 一种硅基氮化铟太阳能电池及其制备方法 |
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CN110265502A (zh) * | 2019-06-13 | 2019-09-20 | 深圳市科创数字显示技术有限公司 | 一种硅基氮化铟太阳能电池及其制备方法 |
CN110246907A (zh) * | 2019-07-12 | 2019-09-17 | 通威太阳能(成都)有限公司 | 一种具有提升异质结太阳电池光电转换效率的电池结构 |
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