CN109638094A - 高效异质结电池本征非晶硅钝化层结构及其制备方法 - Google Patents
高效异质结电池本征非晶硅钝化层结构及其制备方法 Download PDFInfo
- Publication number
- CN109638094A CN109638094A CN201811472130.XA CN201811472130A CN109638094A CN 109638094 A CN109638094 A CN 109638094A CN 201811472130 A CN201811472130 A CN 201811472130A CN 109638094 A CN109638094 A CN 109638094A
- Authority
- CN
- China
- Prior art keywords
- layer
- amorphous silicon
- intrinsic
- preparation
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 136
- 238000002161 passivation Methods 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 31
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910000077 silane Inorganic materials 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims 1
- 239000012895 dilution Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 210000001161 mammalian embryo Anatomy 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 181
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明涉及的一种高效异质结电池本征非晶硅钝化层结构及其制备方法，它包括N型晶体硅片（1），所述N型晶体硅片（1）的正面和背面均设有多层非晶硅本征层；所述第二层非晶硅本征层（3）的外侧设有非晶硅掺杂层（4），所述非晶硅掺杂层（4）的外侧设有TCO导电膜（5），所述TCO导电膜（5）的外侧设有若干Ag电极（6）。本发明的非晶硅本征层采用叠层，第一层采用纯硅烷沉积，有效了避免晶体硅/非晶硅界面初始沉积的外延生长，第二层采用高氢稀释的硅烷沉积，提高了第一层非晶硅的薄膜氢含量，同时增强了界面钝化。
Description
技术领域
本发明涉及光伏高效电池技术领域，尤其涉及一种高效异质结电池本征非晶硅钝化层结构及其制备方法。
背景技术
随着光伏技术的快速发展，晶体硅太阳电池的转换效率逐年提高。在当前光伏工业界，单晶硅太阳电池的转换效率已达到21%以上，多晶硅太阳电池的转换效率已达19%以上。然而大规模生产的、转换效率达22.5%以上的硅基太阳电池仅美国SunPower公司的背接触太阳电池(Interdigitated Back Contact，IBC)和日本松下公司的带本征薄层的非晶硅/晶体硅异质结太阳电池(Hetero-junction with Intrinsic Thin layer，HJT)。和IBC太阳电池相比，HJT电池具有能耗少、工艺流程简单、温度系数小等诸多优点，这些也是HJT太阳能电池能从众多高效硅基太阳电池方案中脱颖而出的原因。
当前，我国正在大力推广分布式太阳能光伏发电，由于屋顶资源有限，而且分布式光伏发电需求高转换效率的太阳电池组件，正是由于HJT太阳电池具有高效、双面发电的优势，在分布式光伏电站中表现出广阔的应用前景。
非晶硅本征层钝化是HJT的电池的关键技术之一，钝化效果的优劣直接影响到电池的光电转换效率。目前采用5-10nm单层本征非晶硅对硅表面进行钝化。本征非晶硅钝化主要是非晶硅内的H原子对晶体硅表面的悬挂键进行钝化，为了获得高效的钝化效果，在沉积本征非晶硅薄膜时采用高的H稀释比，一般H2:SiH4=5:1。如此高的H稀释比既会导致在沉积过程中H离子对晶体硅表面轰击，形成缺陷，又会在非晶硅沉积的过程中产生外延生长，形成微空洞缺陷，最终导致太阳能电池性能的恶化。
发明内容
本发明的目的在于克服上述不足，提供一种高效异质结电池本征非晶硅钝化层结构及其制备方法，既能够避免初始沉积时H离子对硅表面的轰击损伤和外延生长，又能提高本征非晶硅薄膜内H原子的含量。
本发明的目的是这样实现的：
一种高效异质结电池本征非晶硅钝化层结构，它包括N型晶体硅片，所述N型晶体硅片的正面和背面均设有多层非晶硅本征层；所述第二层非晶硅本征层的外侧设有非晶硅掺杂层，所述非晶硅掺杂层的外侧设有TCO导电膜，所述TCO导电膜的外侧设有若干Ag电极。
一种高效异质结电池本征非晶硅钝化层结构，所述多层非晶硅本征层的靠近N型晶体硅片的第一层采用纯硅烷进行沉积，其他层采用高氢稀释的硅烷进行沉积，高氢和硅烷的比例逐层递增。
一种高效异质结电池本征非晶硅钝化层结构，所述多层非晶硅本征层的每层的厚度为1~10nm，
一种高效异质结电池本征非晶硅钝化层结构的制备方法，包括以下几个步骤：
第一步、选取基材N型单晶硅片进行制绒、清洗处理；
第二步、通过PECVD制备正背面的多层双本征非晶硅层；
第三步、选取N型非晶硅膜为受光面掺杂层；
第四步、使用等离子体增强化学气相沉积制备N型非晶硅层；
第五步、使用PECVD制备P型非晶硅层；
第六步、使用RPD或者PVD方法沉积TCO导电膜；
第七步、通过丝网印刷形成正背面Ag电极；
第八步、固化使得银栅线与TCO导电膜之间形成良好的欧姆接触；
第九步、进行测试电池的电性能。
一种高效异质结电池本征非晶硅钝化层结构的制备方法，所述多层非晶硅本征层的靠近N型晶体硅片的第一层采用纯硅烷进行沉积，其他层采用高氢稀释的硅烷进行沉积，高氢和硅烷的比例逐层递增。
一种高效异质结电池本征非晶硅钝化层结构的制备方法，所述多层非晶硅本征层的每层的厚度为1~10nm，所述多层非晶硅本征层的总厚度为5~10nm。
一种高效异质结电池本征非晶硅钝化层结构的制备方法，所述N型非晶硅层厚度为4~8nm。
一种高效异质结电池本征非晶硅钝化层结构的制备方法，所述P型非晶硅层厚度为5~15nm。
一种高效异质结电池本征非晶硅钝化层结构的制备方法，所述TCO导电膜厚度为70~110nm。
与现有技术相比，本发明的有益效果是：
本发明的HJT电池的非晶硅本征层采用叠层，第一层采用纯硅烷沉积，有效了避免晶体硅/非晶硅界面初始沉积的外延生长，第二层采用高氢稀释的硅烷沉积，提高了第一层非晶硅的薄膜氢含量，同时增强了界面钝化。
附图说明
图1为本发明HJT异质结太阳能电池的结构示意图。
其中：
N型晶体硅片1、第一层非晶硅本征层2、第二层非晶硅本征层3、非晶硅掺杂层4、TCO导电膜5、Ag电极6。
具体实施方式
实施例1：
参见图1，本发明涉及的一种高效异质结电池本征非晶硅钝化层结构，它包括N型晶体硅片1，所述N型晶体硅片1的正面和背面均设有两层非晶硅本征层2，即第一层非晶硅本征层2和第二层非晶硅本征层3；
所述第一层非晶硅本征层2厚度为4nm，所述第一层非晶硅本征层2采用PECVD方式不通H2沉积，即采用纯硅烷进行沉积；所述第二层非晶硅本征层3厚度为4nm，所述第二层非晶硅本征层3采用H2稀释的SiH4进行沉积，所述H2：SiH4为1:1；
第一层非晶硅本征层2采用纯硅烷防止了外延生长和H离子轰击，减少硅表面缺陷，使电池的开路电压和填充因子得到提升；
第二层非晶硅本征层3采用H2稀释SiH4进行沉积，增加了本征非晶硅内的H含量，提升钝化效果，使电池的开路电压和填充因子得到提升；
所述第二层非晶硅本征层3的外侧设有非晶硅掺杂层4，所述非晶硅掺杂层4的外侧设有TCO导电膜5，所述TCO导电膜5的外侧设有若干Ag电极6。
本发明涉及的一种高效异质结电池本征非晶硅钝化层结构的制备方法，包括以下几个步骤：
（1）对尺寸为156.75mm、厚度为180um的N型单晶硅片1进行制绒、清洗处理；
（2）通过PECVD制备正背面的两层双本征非晶硅层，第一层非晶硅本征层2采用纯硅烷进行沉积，第一层非晶硅本征层2厚度4nm，第二层非晶硅本征层3采用H2稀释的SiH4进行沉积，所述H2：SiH4为1：1，第二层非晶硅本征层3厚度4nm；
（3）选取N型非晶硅膜为受光面掺杂层；
（4）使用等离子体增强化学气相沉积制备N型非晶硅层，厚度为6nm；
（5）使用PECVD制备P型非晶硅层，厚度10 nm；
（6）使用RPD或者PVD方法沉积TCO导电膜7，厚度为100nm；
（7）通过丝网印刷形成正背面Ag电极8；
（8）固化使得银栅线与TCO导电膜7之间形成良好的欧姆接触；
（9）进行测试电池的电性能。
实施例2：
参见图1，本发明涉及的一种高效异质结电池本征非晶硅钝化层结构，它包括N型晶体硅片1，所述N型晶体硅片1的正面和背面均设有两层非晶硅本征层2，即第一层非晶硅本征层2和第二层非晶硅本征层3；
所述第一层非晶硅本征层2厚度为3nm，所述第一层非晶硅本征层2采用PECVD方式不通H2沉积，即采用纯硅烷进行沉积；所述第二层非晶硅本征层3厚度为5nm，所述第二层非晶硅本征层3采用H2稀释的SiH4进行沉积，所述H2：SiH4为2：1；
第一层非晶硅本征层2采用纯硅烷防止了外延生长和H离子轰击，减少硅表面缺陷，使电池的开路电压和填充因子得到提升；
第二层非晶硅本征层3采用H2稀释SiH4进行沉积，增加了本征非晶硅内的H含量，提升钝化效果，使电池的开路电压和填充因子得到提升；
所述第二层非晶硅本征层3的外侧设有非晶硅掺杂层4，所述非晶硅掺杂层4的外侧设有TCO导电膜5，所述TCO导电膜5的外侧设有若干Ag电极6。
本发明涉及的一种高效异质结电池本征非晶硅钝化层结构的制备方法，包括以下几个步骤：
（1）对尺寸为156.75mm、厚度为180um的N型单晶硅片1进行制绒、清洗处理；
（2）通过PECVD制备正背面的两层双本征非晶硅层，第一层非晶硅本征层2采用纯硅烷进行沉积，第一层非晶硅本征层2厚度3nm，第二层非晶硅本征层3采用H2稀释的SiH4进行沉积，所述H2：SiH4为2：1，第二层非晶硅本征层3厚度5nm；
（3）选取N型非晶硅膜为受光面掺杂层；
（4）使用等离子体增强化学气相沉积制备N型非晶硅层，厚度为6nm；
（5）使用PECVD制备P型非晶硅层，厚度10 nm；
（6）使用RPD或者PVD方法沉积TCO导电膜7，厚度为100nm；
（7）通过丝网印刷形成正背面Ag电极8；
（8）固化使得银栅线与TCO导电膜7之间形成良好的欧姆接触；
（9）进行测试电池的电性能。
实施例3：
参见图1，本发明涉及的一种高效异质结电池本征非晶硅钝化层结构，它包括N型晶体硅片1，所述N型晶体硅片1的正面和背面均设有三层非晶硅本征层2，即第一层非晶硅本征层2、第二层非晶硅本征层3和第三层非晶硅本征层；
所述第一层非晶硅本征层2厚度为3nm，所述第一层非晶硅本征层2采用PECVD方式不通H2沉积，即采用纯硅烷进行沉积；所述第二层非晶硅本征层3厚度为3nm，所述第二层非晶硅本征层3采用H2稀释的SiH4进行沉积，所述第二层非晶硅本征层3的H2：SiH4为1：1；所述第三层非晶硅本征层厚度为3nm，所述第三层非晶硅本征层采用H2稀释的SiH4进行沉积，所述第三层非晶硅本征层的H2：SiH4为2：1；
第一层非晶硅本征层2采用纯硅烷防止了外延生长和H离子轰击，减少硅表面缺陷，使电池的开路电压和填充因子得到提升；
第二层非晶硅本征层3和第三层非晶硅本征层采用H2稀释SiH4进行沉积，增加了本征非晶硅内的H含量，提升钝化效果，使电池的开路电压和填充因子得到提升；
所述第三层非晶硅本征层的外侧设有非晶硅掺杂层4，所述非晶硅掺杂层4的外侧设有TCO导电膜5，所述TCO导电膜5的外侧设有若干Ag电极6。
本发明涉及的一种高效异质结电池本征非晶硅钝化层结构的制备方法，包括以下几个步骤：
（1）对尺寸为156.75mm、厚度为180um的N型单晶硅片1进行制绒、清洗处理；
（2）通过PECVD制备正背面的三层双本征非晶硅层，第一层非晶硅本征层2采用纯硅烷进行沉积，第一层非晶硅本征层2厚度3nm，第二层非晶硅本征层3采用H2稀释的SiH4进行沉积，所述第二层非晶硅本征层3的H2：SiH4为1：1，所述第二层非晶硅本征层3厚度3nm；所述第三层非晶硅本征层厚度为3nm，所述第三层非晶硅本征层采用H2稀释的SiH4进行沉积，所述第三层非晶硅本征层的H2：SiH4为2：1；
（3）选取N型非晶硅膜为受光面掺杂层；
（4）使用等离子体增强化学气相沉积制备N型非晶硅层，厚度为6nm；
（5）使用PECVD制备P型非晶硅层，厚度10 nm；
（6）使用RPD或者PVD方法沉积TCO导电膜7，厚度为100nm；
（7）通过丝网印刷形成正背面Ag电极8；
（8）固化使得银栅线与TCO导电膜7之间形成良好的欧姆接触；
（9）进行测试电池的电性能。
将本发明的实施例数据与现有技术对比，本发明与现有技术的电性能对比参见下表，主要从开路电压Voc、短路电流Isc和填充因子FF体现，可以得到本发明的太阳能电池电性能参数的提升，使太阳能电池的转换效率Eta有所提升。
以上仅是本发明的具体应用范例，对本发明的保护范围不构成任何限制。凡采用等同变换或者等效替换而形成的技术方案，均落在本发明权利保护范围之内。
Claims (8)
1.一种高效异质结电池本征非晶硅钝化层结构，它包括N型晶体硅片（1），其特征在于：所述N型晶体硅片（1）的正面和背面均设有多层非晶硅本征层；所述第二层非晶硅本征层（3）的外侧设有非晶硅掺杂层（4），所述非晶硅掺杂层（4）的外侧设有TCO导电膜（5），所述TCO导电膜（5）的外侧设有若干Ag电极（6）。
2.根据权利要求1所述的一种高效异质结电池本征非晶硅钝化层结构，其特征在于：所述多层非晶硅本征层的靠近N型晶体硅片（1）的第一层采用纯硅烷进行沉积，其他层采用高氢稀释的硅烷进行沉积，高氢和硅烷的比例逐层递增。
3.根据权利要求1所述的一种高效异质结电池本征非晶硅钝化层结构，其特征在于：所述多层非晶硅本征层的每层的厚度为1~10nm，
一种权利要求1所述的高效异质结电池本征非晶硅钝化层结构的制备方法，其特征在于，包括以下几个步骤：
第一步、选取基材N型单晶硅片（1）进行制绒、清洗处理；
第二步、通过PECVD制备正背面的多层双本征非晶硅层；
第三步、选取N型非晶硅膜为受光面掺杂层；
第四步、使用等离子体增强化学气相沉积制备N型非晶硅层；
第五步、使用PECVD制备P型非晶硅层；
第六步、使用RPD或者PVD方法沉积TCO导电膜（5）；
第七步、通过丝网印刷形成正背面Ag电极（6）；
第八步、固化使得银栅线与TCO导电膜（5）之间形成良好的欧姆接触；
第九步、进行测试电池的电性能。
4.根据权利要求4所述的高效异质结电池本征非晶硅钝化层结构的制备方法，其特征在于: 所述多层非晶硅本征层的靠近N型晶体硅片（1）的第一层采用纯硅烷进行沉积，其他层采用高氢稀释的硅烷进行沉积，高氢和硅烷的比例逐层递增。
5.根据权利要求4所述的高效异质结电池本征非晶硅钝化层结构的制备方法，其特征在于: 所述多层非晶硅本征层的每层的厚度为1~10nm，所述多层非晶硅本征层的总厚度为5~10nm。
6.根据权利要求4所述的高效异质结电池本征非晶硅钝化层结构的制备方法，其特征在于: 所述N型非晶硅层厚度为4~8nm。
7.根据权利要求4所述的高效异质结电池本征非晶硅钝化层结构的制备方法，其特征在于: 所述P型非晶硅层厚度为5~15nm。
8.根据权利要求4所述的高效异质结电池本征非晶硅钝化层结构的制备方法，其特征在于:所述TCO导电膜（5）厚度为70~110nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811472130.XA CN109638094A (zh) | 2018-12-04 | 2018-12-04 | 高效异质结电池本征非晶硅钝化层结构及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811472130.XA CN109638094A (zh) | 2018-12-04 | 2018-12-04 | 高效异质结电池本征非晶硅钝化层结构及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109638094A true CN109638094A (zh) | 2019-04-16 |
Family
ID=66071027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811472130.XA Pending CN109638094A (zh) | 2018-12-04 | 2018-12-04 | 高效异质结电池本征非晶硅钝化层结构及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109638094A (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212060A (zh) * | 2019-05-21 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | 一种电池制备方法、电池、电池组件及太阳能供电站 |
| CN110707182A (zh) * | 2019-10-18 | 2020-01-17 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
| CN111628032A (zh) * | 2020-05-11 | 2020-09-04 | 中威新能源(成都)有限公司 | 一种硅异质结太阳电池本征钝化层的结构及其制作方法 |
| CN112011788A (zh) * | 2019-05-29 | 2020-12-01 | 成都珠峰永明科技有限公司 | 硅异质结太阳能电池本征非晶硅膜层的制备方法 |
| CN113363340A (zh) * | 2020-12-30 | 2021-09-07 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种异质结电池制备方法及异质结电池 |
| CN114171628A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及其制作方法 |
| CN114613866A (zh) * | 2020-11-25 | 2022-06-10 | 嘉兴阿特斯技术研究院有限公司 | 太阳能电池及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103119727A (zh) * | 2010-10-01 | 2013-05-22 | 株式会社钟化 | 光电转换装置的制造方法 |
| CN103999242A (zh) * | 2012-10-02 | 2014-08-20 | 株式会社钟化 | 晶体硅太阳能电池的制造方法、太阳能电池模块的制造方法、晶体硅太阳能电池以及太阳能电池模块 |
| CN107078179A (zh) * | 2014-09-30 | 2017-08-18 | 株式会社钟化 | 晶体硅太阳能电池的制造方法、及太阳能电池模块的制造方法 |
| CN108431967A (zh) * | 2015-12-24 | 2018-08-21 | 株式会社钟化 | 光电转换装置的制造方法 |
-
2018
- 2018-12-04 CN CN201811472130.XA patent/CN109638094A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103119727A (zh) * | 2010-10-01 | 2013-05-22 | 株式会社钟化 | 光电转换装置的制造方法 |
| CN103999242A (zh) * | 2012-10-02 | 2014-08-20 | 株式会社钟化 | 晶体硅太阳能电池的制造方法、太阳能电池模块的制造方法、晶体硅太阳能电池以及太阳能电池模块 |
| CN107078179A (zh) * | 2014-09-30 | 2017-08-18 | 株式会社钟化 | 晶体硅太阳能电池的制造方法、及太阳能电池模块的制造方法 |
| CN108431967A (zh) * | 2015-12-24 | 2018-08-21 | 株式会社钟化 | 光电转换装置的制造方法 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212060A (zh) * | 2019-05-21 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | 一种电池制备方法、电池、电池组件及太阳能供电站 |
| CN110212060B (zh) * | 2019-05-21 | 2021-12-10 | 苏州联诺太阳能科技有限公司 | 一种电池制备方法、电池、电池组件及太阳能供电站 |
| CN112011788A (zh) * | 2019-05-29 | 2020-12-01 | 成都珠峰永明科技有限公司 | 硅异质结太阳能电池本征非晶硅膜层的制备方法 |
| CN110707182A (zh) * | 2019-10-18 | 2020-01-17 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
| CN110707182B (zh) * | 2019-10-18 | 2022-07-12 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
| CN111628032A (zh) * | 2020-05-11 | 2020-09-04 | 中威新能源(成都)有限公司 | 一种硅异质结太阳电池本征钝化层的结构及其制作方法 |
| CN111628032B (zh) * | 2020-05-11 | 2022-05-27 | 中威新能源(成都)有限公司 | 一种硅异质结太阳电池本征钝化层的结构及其制作方法 |
| CN114171628A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及其制作方法 |
| CN114613866A (zh) * | 2020-11-25 | 2022-06-10 | 嘉兴阿特斯技术研究院有限公司 | 太阳能电池及其制备方法 |
| CN113363340A (zh) * | 2020-12-30 | 2021-09-07 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种异质结电池制备方法及异质结电池 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109638094A (zh) | 高效异质结电池本征非晶硅钝化层结构及其制备方法 | |
| CN109411551B (zh) | 多步沉积的高效晶硅异质结太阳能电池电极结构及其制备方法 | |
| CN102157577B (zh) | 纳米硅/单晶硅异质结径向纳米线太阳电池及制备方法 | |
| CN109509807A (zh) | 晶硅异质结太阳能电池的发射极结构及其制备方法 | |
| CN109449227B (zh) | 叠层本征层的晶硅异质结太阳能电池电极结构及其制备方法 | |
| CN109638101A (zh) | 双层非晶硅掺杂层太阳电池的发射极结构及其制备方法 | |
| CN110310999A (zh) | 渐变叠层tco导电膜的异质结电池结构及其制备方法 | |
| CN109461780A (zh) | 高匹配度的高效晶硅异质结太阳能电池电极结构及其制备方法 | |
| CN111883621A (zh) | 一种高效晶硅异质结太阳能电池的tco镀膜工艺方法 | |
| CN217280794U (zh) | 一种光伏电池 | |
| CN114765235A (zh) | 异质结太阳能电池及其制造方法 | |
| CN108028290B (zh) | 光电转换元件 | |
| CN110416345A (zh) | 双层非晶硅本征层的异质结太阳能电池结构及其制备方法 | |
| CN201699034U (zh) | 一种硅基异质结太阳电池 | |
| CN208655672U (zh) | 异质结太阳能电池 | |
| CN115763604A (zh) | 一种新型高反射异质结电池器件结构及工艺 | |
| CN207637825U (zh) | 一种高效晶硅非晶硅异质结电池结构 | |
| CN217182188U (zh) | 一种钙钛矿/钙钛矿/硅-锗基三结叠层太阳能电池 | |
| CN112701194B (zh) | 一种异质结太阳能电池的制备方法 | |
| CN210156405U (zh) | 具有氢退火tco导电膜的异质结电池结构 | |
| CN209087855U (zh) | 多步沉积的高效晶硅异质结太阳能电池结构 | |
| CN102144296B (zh) | 光伏电池及光伏电池制造方法 | |
| CN112216747A (zh) | 一种异质结太阳能电池及其制备方法与应用 | |
| CN114171632A (zh) | 异质结太阳能电池及光伏组件 | |
| CN110459639A (zh) | 具有氢退火tco导电膜的异质结电池结构及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190416 |