CN110310999A - 渐变叠层tco导电膜的异质结电池结构及其制备方法 - Google Patents
渐变叠层tco导电膜的异质结电池结构及其制备方法 Download PDFInfo
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Abstract
本发明涉及的一种渐变叠层TCO导电膜的异质结电池结构及其制备方法，它包括硅衬底，所述硅衬底的双面均设有非晶硅本征层，所述非晶硅本征层的外侧设有非晶硅掺杂层；所述硅衬底受光面的非晶硅掺杂层的外侧设有叠层TCO导电膜，所述硅衬底非受光面的非晶硅掺杂层的外侧设有单层TCO导电膜；所述叠层TCO导电膜和单层TCO导电膜的外侧均设有若干Ag电极；所述叠层TCO导电膜包括依次向外设置的多层TCO导电膜，每一层的靶材功率密度逐层增加，靠近非晶硅掺杂层的第一层靶位TCO导电膜不通氧气，其他每一层的O2/功率逐层增加。本发明低高能粒子对非晶硅薄膜的撞击损伤，能够获得最优的TCO光学、电学性能，提升异质结太阳能电池性能。
Description
技术领域
本发明涉及光伏高效电池技术领域，尤其涉及一种渐变叠层TCO导电膜的异质结电池结构及其制备方法。
背景技术
随着光伏技术的快速发展，晶体硅太阳电池的转换效率逐年提高。在当前光伏工业界，单晶硅太阳电池的转换效率已达到20%以上，多晶硅太阳电池的转换效率已达18.5%以上。然而大规模生产的、转换效率达22.5%以上的硅基太阳电池仅美国SunPower公司的背接触太阳电池(Interdigitated Back Contact，IBC)和日本松下公司的带本征薄层的非晶硅/晶体硅异质结太阳电池(Hetero-junction with Intrinsic Thin layer，HJT)。和IBC太阳电池相比，HJT电池具有能耗少、工艺流程简单、温度系数小等诸多优点，这些也是HJT太阳能电池能从众多高效硅基太阳电池方案中脱颖而出的原因。
当前，我国正在大力推广分布式太阳能光伏发电，由于屋顶资源有限，而且分布式光伏发电需求高转换效率的太阳电池组件，正是由于HJT太阳电池具有高效、双面发电的优势，在分布式光伏电站中表现出广阔的应用前景。
如图1所示，为现有技术的HJT电池片的电极结构，现有HJT电池TCO的制备方法直接采用多靶同气体流量、同功率制备，整个TCO薄膜性质都是一样的。TCO薄膜主要作用是在传输载流子、减反射和保护非晶硅膜层。这种方式存在以下两个缺陷：（1）为了满足产能，在刚开始制备TCO导电膜时，采用高功率、高能量粒子轰击非晶硅薄膜，会严重损伤非晶硅薄膜；（2）TCO导电膜的透过与导电是相矛盾的，采用同功率同气体流量无法同时获得高透过率和高导电率，从而影响HJT太阳能电池的光电性能。
发明内容
本发明的目的在于克服上述不足，提供一种渐变叠层TCO导电膜的异质结电池结构及其制备方法，降低对非晶硅薄膜的撞击损伤，获得最优的TCO光学、电学性能，提升异质结太阳能电池性能。
本发明的目的是这样实现的：
一种渐变叠层TCO导电膜的异质结电池结构，它包括硅衬底，所述硅衬底的双面均设有非晶硅本征层，所述非晶硅本征层的外侧设有非晶硅掺杂层；所述硅衬底受光面的非晶硅掺杂层的外侧设有叠层TCO导电膜，所述硅衬底非受光面的非晶硅掺杂层的外侧设有单层TCO导电膜；所述叠层TCO导电膜和单层TCO导电膜的外侧均设有若干Ag电极；所述叠层TCO导电膜包括依次向外设置的多层TCO导电膜，每一层的靶材功率密度逐层增加，靠近非晶硅掺杂层的第一层靶位TCO导电膜不通氧气，其他每一层的O2/功率逐层增加。
一种渐变叠层TCO导电膜的异质结电池结构，靠近非晶硅掺杂层的第一层靶位TCO导电膜的靶材功率密度为0.135~0.33 w/mm，第二层靶位TCO导电膜的靶材功率密度为1.3~2.5 w/mm，从第三层开始向外的剩余层的TCO导电膜的靶材功率密度为3~6 w/mm。
一种渐变叠层TCO导电膜的异质结电池结构，第二层靶位TCO导电膜的O2/功率为0.5~0.75，从第三层开始向外的剩余层的TCO导电膜的O2/功率为1~2.5。
一种渐变叠层TCO导电膜的异质结电池结构，靠近非晶硅掺杂层的第一层靶位TCO导电膜的Ar流量为400~800sccm，其他层通过调节Ar流量保证工艺腔压力在0.3~0.8pa之间。
一种渐变叠层TCO导电膜的异质结电池结构，靠近非晶硅掺杂层的第一层靶位TCO导电膜的膜厚为1.3~3nm，第二层靶位TCO导电膜的膜厚为24~30nm，从第三层开始向外的剩余层的各层膜厚为50~70nm，所述叠层TCO导电膜4的总膜厚为70~110nm。
一种渐变叠层TCO导电膜的异质结电池结构的制备方法，包括以下几个步骤：
第一步、选取基材硅衬底进行制绒、清洗处理；
第二步、通过PECVD制备双面非晶硅本征层，厚度为6nm；
第三步、选取N型非晶硅膜为受光面掺杂层；
第四步、使用等离子体增强化学气相沉积制备n型非晶硅掺杂层；
第五步、使用等离子体化学气相沉积制备p型非晶硅掺杂层；
第六步、使用PVD方法沉积受光面的叠层TCO导电膜，靠近非晶硅掺杂层的第一层靶位TCO导电膜的靶材功率密度为0.135~0.33 w/mm，无氧气，Ar流量为400~800sccm，第二层靶位TCO导电膜的靶材功率密度为1.3~2.5 w/mm， O2/功率为0.5~0.75，工艺腔压力为0.3~0.8pa；从第三层开始向外的剩余层的TCO导电膜的靶材功率密度为3~6 w/mm ，O2/功率为1~2.5，工艺腔压力为0.3~0.8pa；
第七步、使用PVD方法沉积背光面的单层TCO导电膜；
第八步、通过丝网印刷形成正背面Ag电极；
第九步、固化使得银栅线与TCO导电膜之间形成良好的欧姆接触；
第十步、进行测试电池的电性能。
一种渐变叠层TCO导电膜的异质结电池结构的制备方法，靠近非晶硅掺杂层3的第一层靶位TCO导电膜的厚度为1.3~3nm，第二层靶位TCO导电膜的厚度为24~30 nm，从第三层开始向外的剩余层的各层膜厚为50~70nm。
一种渐变叠层TCO导电膜的异质结电池结构的制备方法，所述非晶硅本征层厚度为5~10nm。
一种渐变叠层TCO导电膜的异质结电池结构的制备方法，所述n型非晶硅掺杂层厚度为4~8nm，所述p型非晶硅掺杂层的厚度为7~15 nm。
一种渐变叠层TCO导电膜的异质结电池结构的制备方法，所述叠层TCO导电膜和单层TCO导电膜的总膜厚均为70~110nm。
与现有技术相比，本发明的有益效果是：
本发明通过在受光面第一层靶位采用低功率、高Ar流量，降低高能粒子对非晶硅薄膜的撞击损伤，第二层靶位向上采用渐变叠层方法沉积TCO薄膜，功率逐渐增加，氧气逐渐增加，且氧气/功率逐渐增加，稳定工艺腔室压力在0.3-0.8pa之间，能够获得最优的TCO光学、电学性能，提升异质结太阳能电池性能。
附图说明
图1为现有异质结太阳能电池的结构示意图。
图2为本发明异质结太阳能电池的结构示意图。
其中：
硅衬底1、非晶硅本征层2、非晶硅掺杂层3、叠层TCO导电膜4、第一层靶位TCO导电膜4.1、第二层靶位TCO导电膜4.2、第三层靶位TCO导电膜4.3、单层TCO导电膜5、Ag电极6。
具体实施方式
实施例1：
参见图2，本发明涉及的一种渐变叠层TCO导电膜的异质结电池结构，它包括硅衬底1，所述硅衬底1的双面均设有非晶硅本征层2，所述非晶硅本征层2的外侧设有非晶硅掺杂层3；
所述硅衬底1受光面的非晶硅掺杂层3的外侧设有叠层TCO导电膜4，所述硅衬底1非受光面的非晶硅掺杂层3的外侧设有单层TCO导电膜5；所述叠层TCO导电膜4和单层TCO导电膜5的外侧均设有若干Ag电极6；
所述叠层TCO导电膜4包括依次向外设置的第一层靶位TCO导电膜4.1、第二层靶位TCO导电膜4.2和第三层靶位TCO导电膜4.3，所述第一层靶位TCO导电膜4.1的靶材功率密度为0.14w/mm，不通氧气，Ar流量为500sccm，所述第一层靶位TCO导电膜4.1的厚度1.25nm；所述第二层靶位TCO导电膜4.2的靶材功率密度为1.5w/mm，O2/功率为0.6，Ar流量为100sccm，工艺腔压力为0.45pa；所述第三层靶位TCO导电膜4.3的靶材功率密度为3w/mm，O2/功率为1.2，Ar流量为100sccm，工艺腔压力为0.45pa。
本发明涉及的一种渐变叠层TCO导电膜的异质结电池结构的制备方法，包括以下几个步骤：
（1）对尺寸为156.75mm、厚度为180um的硅衬底1进行制绒、清洗处理；
（2）通过PECVD制备双面本征非晶硅层2，厚度为6nm；
（3）选取N型非晶硅膜为受光面掺杂层；
（4）使用等离子体增强化学气相沉积制备n型非晶硅掺杂层，厚度为6nm；
（5）使用等离子体化学气相沉积制备p型非晶硅掺杂层，总厚度为10nm；
（6）使用PVD方法沉积受光面的叠层TCO导电膜4，总厚度为100nm，具体沉积方法为：第一层靶位TCO导电膜4.1的功率密度0.14w/mm，无氧气，Ar流量为500sccm，厚度为1.25nm；第二层靶位TCO导电膜4.2的功率密度为1.5w/mm，O2/功率为0.6，Ar流量为100sccm，工艺腔压力为0.45pa；第三层靶位TCO导电膜4.3的功率密度为3w/mm，O2/功率为1.2，Ar流量为100sccm，工艺腔压力为0.45pa；
（7）使用PVD方法沉积背光面的单层TCO导电膜5，厚度为100nm；
（8）通过丝网印刷形成正背面Ag电极6；
（9）固化使得银栅线与TCO导电膜之间形成良好的欧姆接触；
（10）进行测试电池的电性能。
实施例2：
参见图2，本发明涉及的一种渐变叠层TCO导电膜的异质结电池结构，与实施例1不同的是，所述第一层靶位TCO导电膜4.1的靶材功率密度为0.2w/mm，不通氧气，Ar流量为600sccm，所述第一层靶位TCO导电膜4.1的厚度1.8nm；所述第二层靶位TCO导电膜4.2的靶材功率密度为2w/mm，O2/功率为0.7，Ar流量为100sccm，工艺腔压力为0.45pa；所述第三层靶位TCO导电膜4.3的靶材功率密度为4w/mm，O2/功率为1.8，Ar流量为100sccm，工艺腔压力为0.45pa。
实施例3：
参见图2，本发明涉及的一种渐变叠层TCO导电膜的异质结电池结构，与实施例1不同的是，所述第一层靶位TCO导电膜4.1的靶材功率密度为0.3w/mm，不通氧气，Ar流量为700sccm，所述第一层靶位TCO导电膜4.1的厚度2.2nm；所述第二层靶位TCO导电膜4.2的靶材功率密度为2.5w/mm，O2/功率为0.75，Ar流量为100sccm，工艺腔压力为0.45pa；所述第三层靶位TCO导电膜4.3的靶材功率密度为5w/mm，O2/功率为2.2，Ar流量为100sccm，工艺腔压力为0.45pa。
本发明的叠层TCO导电膜4的主要参数如下表：
。
将本发明的实施例数据与双面TCO结构不同其他参数均相同的现有技术对比，本发明与现有技术的电性能对比参见下表，主要从开路电压Voc、短路电流Isc和填充因子FF体现，可以得到本发明的太阳能电池电性能参数的提升，使太阳能电池的转换效率Eta有绝对0.15%的提升。
以上仅是本发明的具体应用范例，对本发明的保护范围不构成任何限制。凡采用等同变换或者等效替换而形成的技术方案，均落在本发明权利保护范围之内。
Claims (10)
1.一种渐变叠层TCO导电膜的异质结电池结构，它包括硅衬底（1），所述硅衬底（1）的双面均设有非晶硅本征层（2），所述非晶硅本征层（2）的外侧设有非晶硅掺杂层（3）；其特征在于：所述硅衬底（1）受光面的非晶硅掺杂层（3）的外侧设有叠层TCO导电膜（4），所述硅衬底（1）非受光面的非晶硅掺杂层（3）的外侧设有单层TCO导电膜（5）；所述叠层TCO导电膜（4）和单层TCO导电膜（5）的外侧均设有若干Ag电极（6）；所述叠层TCO导电膜（4）包括依次向外设置的多层TCO导电膜，每一层的靶材功率密度逐层增加，靠近非晶硅掺杂层（3）的第一层靶位TCO导电膜不通氧气，其他每一层的O2/功率逐层增加。
2.根据权利要求1所述的一种渐变叠层TCO导电膜的异质结电池结构，其特征在于：靠近非晶硅掺杂层（3）的第一层靶位TCO导电膜的靶材功率密度为0.135~0.33 w/mm，第二层靶位TCO导电膜的靶材功率密度为1.3~2.5 w/mm，从第三层开始向外的剩余层的TCO导电膜的靶材功率密度为3~6 w/mm。
3.根据权利要求1所述的一种渐变叠层TCO导电膜的异质结电池结构，其特征在于：第二层靶位TCO导电膜的O2/功率为0.5~0.75，从第三层开始向外的剩余层的TCO导电膜的O2/功率为1~2.5。
4.根据权利要求1所述的一种渐变叠层TCO导电膜的异质结电池结构，其特征在于：靠近非晶硅掺杂层（3）的第一层靶位TCO导电膜的Ar流量为400~800sccm，其他层通过调节Ar流量保证工艺腔压力在0.3~0.8pa之间。
5.根据权利要求1所述的一种渐变叠层TCO导电膜的异质结电池结构，其特征在于：靠近非晶硅掺杂层（3）的第一层靶位TCO导电膜的膜厚为1.3~3nm，第二层靶位TCO导电膜的膜厚为24~30nm，从第三层开始向外的剩余层的各层膜厚为50~70nm，所述叠层TCO导电膜4的总膜厚为70~110nm。
6.一种权利要求1所述的渐变叠层TCO导电膜的异质结电池结构的制备方法，其特征在于，包括以下几个步骤：
第一步、选取基材硅衬底（1）进行制绒、清洗处理；
第二步、通过PECVD制备双面非晶硅本征层（2），厚度为6nm；
第三步、选取N型非晶硅膜为受光面掺杂层；
第四步、使用等离子体增强化学气相沉积制备n型非晶硅掺杂层；
第五步、使用等离子体化学气相沉积制备p型非晶硅掺杂层；
第六步、使用RPD或者PVD方法沉积受光面的叠层TCO导电膜（4），靠近非晶硅掺杂层（3）的第一层靶位TCO导电膜的靶材功率密度为0.135~0.33 w/mm，无氧气，Ar流量为400~800sccm，第二层靶位TCO导电膜的靶材功率密度为1.3~2.5 w/mm， O2/功率为0.5~0.75，工艺腔压力为0.3~0.8pa；从第三层开始向外的剩余层的TCO导电膜的靶材功率密度为3~6 w/mm ，O2/功率为1~2.5，工艺腔压力为0.3~0.8pa；
第七步、使用PVD方法沉积背光面的单层TCO导电膜（5）；
第八步、通过丝网印刷形成正背面Ag电极（6）；
第九步、固化使得银栅线与TCO导电膜之间形成良好的欧姆接触；
第十步、进行测试电池的电性能。
7.根据权利要求6所述的一种渐变叠层TCO导电膜的异质结电池结构的制备方法，其特征在于：靠近非晶硅掺杂层（3）的第一层靶位TCO导电膜的厚度为1.3~3nm，第二层靶位TCO导电膜的厚度为24~30 nm，从第三层开始向外的剩余层的各层膜厚为50~70nm。
8.根据权利要求6所述的一种渐变叠层TCO导电膜的异质结电池结构的制备方法，其特征在于：所述非晶硅本征层（2）厚度为5~10nm。
9.根据权利要求6所述的一种渐变叠层TCO导电膜的异质结电池结构的制备方法，其特征在于：所述n型非晶硅掺杂层厚度为4~8nm，所述p型非晶硅掺杂层的厚度为7~15 nm。
10.根据权利要求6所述的一种渐变叠层TCO导电膜的异质结电池结构的制备方法，其特征在于：所述叠层TCO导电膜（4）和单层TCO导电膜5的总膜厚均为70~110nm。
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