CN109449227B - 叠层本征层的晶硅异质结太阳能电池电极结构及其制备方法 - Google Patents
叠层本征层的晶硅异质结太阳能电池电极结构及其制备方法 Download PDFInfo
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Abstract
本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构及其制备方法,它包括N型晶体硅片,所述N型晶体硅片的正面设有n面非晶硅本征层第一层、n面非晶硅本征层第二层和n面非晶硅本征层第三层,所述N型晶体硅片的背面设有p面非晶硅本征层;所述n面非晶硅本征层第一层采用纯硅烷沉积,所述n面非晶硅本征层第二层采用硅烷和二氧化碳的混合气体沉积,所述n面非晶硅本征层第三层采用硅烷、二氧化碳和氢气的混合气体沉积;所述n面非晶硅本征层第三层和p面非晶硅本征层的外侧均设有非晶硅掺杂层,所述非晶硅掺杂层的外侧设有TCO导电膜。本发明既能有效地钝化晶硅表面,又使非晶硅本征层自身的透过率高,提升电池的光电转换效率。
Description
技术领域
本发明涉及光伏高效电池技术领域,尤其涉及一种叠层本征层的晶硅异质结太阳能电池电极结构及其制备方法。
背景技术
“光伏领跑者计划”是国家能源局拟从2015年开始,之后每年都实行的光伏扶持专项计划,意在促进光伏发电技术进步、产业升级、市场应用和成本下降为目的,通过市场支持和试验示范,以点带面,加速技术成果向市场应用转化,以及落后技术、产能淘汰,实现2020年光伏发电用电侧平价上网目标。在“领跑者”计划中所采用技术和使用的组件都是行业技术绝对领先的技术和产品,高效PERC、黑硅、N型双面、硅异质结(HJT)等高效电池的开发越来越受重视。其中硅基异质结(HJT)太阳电池的高转化效率、高开路电压、低温度系数、无光致衰减(LID)、无电致衰减(PID)、低制程工艺温度等优势成为了最热门研究方向之一。
HJT太阳电池中,本征非晶硅和掺杂非晶硅薄膜叠层对晶体硅表面形成良好的钝化,分离并且收集光生载流子,因此,非晶硅薄膜是HJT电池的重要组成部分,其结构和特性对太阳电池的转换效率和稳定性至关重要性能优异的非晶硅薄膜钝化技术是获得高效HJT电池的关键技术。
如图1所示,为现有技术的HJT电池片的电极结构。非晶硅本征层作为窗口层和钝化层,要求对晶硅表面有良好的钝化效果,又要满足自身的光透过率高。目前单层的本征非晶硅无法满足高透过率与良好钝化效果相匹配,从而抑制了HJT太阳能电池的光电转换效率。
发明内容
本发明的目的在于克服上述不足,提供一种叠层本征层的晶硅异质结太阳能电池电极结构及其制备方法,解决HJT电池中窗口层钝化与光学吸收相矛盾且工艺难以控制的问题,提高HJT太阳能电池的光电转换效率。
本发明的目的是这样实现的:
一种叠层本征层的晶硅异质结太阳能电池电极结构,它包括N型晶体硅片,所述N型晶体硅片的正面设有n面非晶硅本征层第一层、n面非晶硅本征层第二层和n面非晶硅本征层第三层,所述N型晶体硅片的背面设有p面非晶硅本征层;所述n面非晶硅本征层第一层采用纯硅烷进行沉积,所述n面非晶硅本征层第二层采用硅烷和二氧化碳的混合气体进行沉积,所述n面非晶硅本征层第三层采用硅烷、二氧化碳和氢气的混合气体进行沉积;所述n面非晶硅本征层第三层和p面非晶硅本征层的外侧均设有非晶硅掺杂层,所述非晶硅掺杂层的外侧设有TCO导电膜,所述TCO导电膜的外侧设有若干Ag电极。
一种叠层本征层的晶硅异质结太阳能电池电极结构,所述n面非晶硅本征层第一层的厚度为1~5nm,所述n面非晶硅本征层第二层的厚度为1~5nm,所述n面非晶硅本征层第三层的厚度为2~6nm,总厚度为5~15nm。
一种叠层本征层的晶硅异质结太阳能电池电极结构,所述n面非晶硅本征层第一层的带隙为1.4~1.6eV,所述n面非晶硅本征层第二层的带隙为1.6~1.8eV,所述n面非晶硅本征层第三层的带隙为1.5~1.7eV。
一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,包括以下几个步骤:
第一步、选取基材N型单晶硅片进行制绒、清洗处理;
第二步、通过PECVD制备正面的本征非晶硅层,正面本征非晶硅各采用三步沉积,第一步只通入纯硅烷气体形成n面非晶硅本征层第一层,第二步通入硅烷和二氧化碳混合气体形成n面非晶硅本征层第二层,第三步通入硅烷、二氧化碳、氢气混合气体形成n面非晶硅本征层第三层;
第三步、通过PECVD制备背面的本征非晶硅层,采用一步完成7nm沉积;
第四步、选取N型非晶硅膜为受光面掺杂层;
第五步、使用等离子体增强化学气相沉积制备n型非晶硅掺杂层;
第六步、使用等离子体化学气相沉积制备p型非晶硅掺杂层;
第七步、使用RPD或者PVD方法沉积TCO导电膜;
第八步、通过丝网印刷形成正背面Ag电极;
第九步、固化使得银栅线与TCO导电膜之间形成良好的欧姆接触;
第十步、进行测试电池的电性能。
一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,所述n面非晶硅本征层第一层的厚度为1~5nm,所述n面非晶硅本征层第二层的厚度为1~5nm,所述n面非晶硅本征层第三层的厚度为2~6nm,总厚度为5~15nm。
一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,所述n面非晶硅本征层第二层采用的硅烷和二氧化碳比例为10~50,所述n面非晶硅本征层第三层采用的硅烷、二氧化碳和氢气的混合气体中,氢气和硅烷的比例为2~10、硅烷和二氧化碳比例为2~10。
一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,所述n型非晶硅掺杂层厚度为4~8nm,所述p型非晶硅掺杂层的厚度为7~15 nm。
一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,所述TCO导电膜厚度为70~110nm。
与现有技术相比,本发明的有益效果是:
本发明将受光面非晶硅本征层采用多步沉积,且每一步通入不同的混合气体,第一步通入纯硅烷,第二步通入硅烷和二氧化碳,第三步通入硅烷、二氧化碳和氢气。按照此方法制备的非晶硅本征层既能有效地钝化晶硅表面,又保证非晶硅本征层自身的透过率高,本发明制备的HJT太阳能电池开路电压和短路电流都有明显提升,从而提升电池的光电转换效率。
附图说明
图1为现有HJT异质结太阳能电池的结构示意图。
图2为本发明HJT异质结太阳能电池的结构示意图。
其中:
N型晶体硅片1、n面非晶硅本征层第一层2、n面非晶硅本征层第二层3、n面非晶硅本征层第三层4、p面非晶硅本征层5、非晶硅掺杂层6、TCO导电膜7、Ag电极8。
具体实施方式
实施例1:
参见图2,本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构,它包括N型晶体硅片1,所述N型晶体硅片1的正面设有n面非晶硅本征层第一层2、n面非晶硅本征层第二层3和n面非晶硅本征层第三层4,所述N型晶体硅片1的背面设有p面非晶硅本征层5;
所述n面非晶硅本征层第一层2采用纯硅烷进行沉积,所述n面非晶硅本征层第二层3采用硅烷和二氧化碳的混合气体进行沉积,硅烷和二氧化碳的比例为30:1;所述n面非晶硅本征层第三层4采用硅烷、二氧化碳和氢气的混合气体进行沉积,H2:SiH4:CO2=40:4:1;
所述n面非晶硅本征层第三层4和p面非晶硅本征层5的外侧均设有非晶硅掺杂层6,所述非晶硅掺杂层6的外侧设有TCO导电膜7,所述TCO导电膜7的外侧设有若干Ag电极8。
所述n面非晶硅本征层第一层2的厚度为2nm,带隙为1.4eV;所述n面非晶硅本征层第二层3的厚度为2nm,带隙为1.7eV;所述n面非晶硅本征层第三层4的厚度为3nm,带隙为1.6eV。
本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,包括以下几个步骤:
(1)对尺寸为156.75mm、厚度为180um的N型单晶硅片1进行制绒、清洗处理;
(2)通过PECVD制备正面的本征非晶硅层,正面本征非晶硅各采用三步沉积,第一步只通入纯硅烷气体形成n面非晶硅本征层第一层2,第二步通入硅烷和二氧化碳混合气体形成n面非晶硅本征层第二层3,第三步通入硅烷、二氧化碳、氢气混合气体形成n面非晶硅本征层第三层4;所述n面非晶硅本征层第一层2的厚度为2nm,带隙为1.4eV;所述n面非晶硅本征层第二层3的厚度为2nm,带隙为1.7eV;所述n面非晶硅本征层第三层4的厚度为3nm,带隙为1.6eV;
(3)通过PECVD制备背面的本征非晶硅层,采用一步完成7nm沉积;
(4)选取N型非晶硅膜为受光面掺杂层;
(5)使用等离子体增强化学气相沉积制备n型非晶硅掺杂层,厚度为6nm;
(6)使用等离子体化学气相沉积制备p型非晶硅掺杂层,总厚度为10nm;
(7)使用RPD或PVD方法沉积TCO导电膜7,厚度为100nm;
(8)通过丝网印刷形成正背面Ag电极8;
(9)固化使得银栅线与TCO导电膜7之间形成良好的欧姆接触;
(10)进行测试电池的电性能。
实施例2:
参见图2,本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构,它包括N型晶体硅片1,所述N型晶体硅片1的正面设有n面非晶硅本征层第一层2、n面非晶硅本征层第二层3和n面非晶硅本征层第三层4,所述N型晶体硅片1的背面设有p面非晶硅本征层5;
所述n面非晶硅本征层第一层2采用纯硅烷进行沉积,所述n面非晶硅本征层第二层3采用硅烷和二氧化碳的混合气体进行沉积,硅烷和二氧化碳的比例为10:1;所述n面非晶硅本征层第三层4采用硅烷、二氧化碳和氢气的混合气体进行沉积,H2:SiH4:CO2=8:4:2;
所述n面非晶硅本征层第三层4和p面非晶硅本征层5的外侧均设有非晶硅掺杂层6,所述非晶硅掺杂层6的外侧设有TCO导电膜7,所述TCO导电膜7的外侧设有若干Ag电极8。
所述n面非晶硅本征层第一层2的厚度为3nm,带隙为1.6eV;所述n面非晶硅本征层第二层3的厚度为2nm,带隙为1.8eV;所述n面非晶硅本征层第三层4的厚度为2nm,带隙为1.7eV。
本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,包括以下几个步骤:
(1)对尺寸为156.75mm、厚度为180um的N型单晶硅片1进行制绒、清洗处理;
(2)通过PECVD制备正面的本征非晶硅层,正面本征非晶硅各采用三步沉积,第一步只通入纯硅烷气体形成n面非晶硅本征层第一层2,第二步通入硅烷和二氧化碳混合气体形成n面非晶硅本征层第二层3,第三步通入硅烷、二氧化碳、氢气混合气体形成n面非晶硅本征层第三层4;所述n面非晶硅本征层第一层2的厚度为3nm,带隙为1.6eV;所述n面非晶硅本征层第二层3的厚度为2nm,带隙为1.8eV;所述n面非晶硅本征层第三层4的厚度为2nm,带隙为1.7eV;
(3)通过PECVD制备背面的本征非晶硅层,采用一步完成7nm沉积;
(4)选取N型非晶硅膜为受光面掺杂层;
(5)使用等离子体增强化学气相沉积制备n型非晶硅掺杂层,厚度为6nm;
(6)使用等离子体化学气相沉积制备p型非晶硅掺杂层,总厚度为10nm;
(7)使用RPD或PVD方法沉积TCO导电膜7,厚度为100nm;
(8)通过丝网印刷形成正背面Ag电极8;
(9)固化使得银栅线与TCO导电膜7之间形成良好的欧姆接触;
(10)进行测试电池的电性能。
实施例3:
参见图2,本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构,它包括N型晶体硅片1,所述N型晶体硅片1的正面设有n面非晶硅本征层第一层2、n面非晶硅本征层第二层3和n面非晶硅本征层第三层4,所述N型晶体硅片1的背面设有p面非晶硅本征层5;
所述n面非晶硅本征层第一层2采用纯硅烷进行沉积,所述n面非晶硅本征层第二层3采用硅烷和二氧化碳的混合气体进行沉积,硅烷和二氧化碳的比例为50:1;所述n面非晶硅本征层第三层4采用硅烷、二氧化碳和氢气的混合气体进行沉积,H2:SiH4:CO2=60:10:1;
所述n面非晶硅本征层第三层4和p面非晶硅本征层5的外侧均设有非晶硅掺杂层6,所述非晶硅掺杂层6的外侧设有TCO导电膜7,所述TCO导电膜7的外侧设有若干Ag电极8。
所述n面非晶硅本征层第一层2的厚度为2nm,带隙为1.5eV;所述n面非晶硅本征层第二层3的厚度为3nm,带隙为1.7eV;所述n面非晶硅本征层第三层4的厚度为3nm,带隙为1.6eV。
本发明涉及的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,包括以下几个步骤:
(1)对尺寸为156.75mm、厚度为180um的N型单晶硅片1进行制绒、清洗处理;
(2)通过PECVD制备正面的本征非晶硅层,正面本征非晶硅各采用三步沉积,第一步只通入纯硅烷气体形成n面非晶硅本征层第一层2,第二步通入硅烷和二氧化碳混合气体形成n面非晶硅本征层第二层3,第三步通入硅烷、二氧化碳、氢气混合气体形成n面非晶硅本征层第三层4;所述n面非晶硅本征层第一层2的厚度为2nm,带隙为1.5eV;所述n面非晶硅本征层第二层3的厚度为3nm,带隙为1.7eV;所述n面非晶硅本征层第三层4的厚度为3nm,带隙为1.6eV;
(3)通过PECVD制备背面的本征非晶硅层,采用一步完成7nm沉积;
(4)选取N型非晶硅膜为受光面掺杂层;
(5)使用等离子体增强化学气相沉积制备n型非晶硅掺杂层,厚度为6nm;
(6)使用等离子体化学气相沉积制备p型非晶硅掺杂层,总厚度为10nm;
(7)使用RPD或PVD方法沉积TCO导电膜7,厚度为100nm;
(8)通过丝网印刷形成正背面Ag电极8;
(9)固化使得银栅线与TCO导电膜7之间形成良好的欧姆接触;
(10)进行测试电池的电性能。
将本发明的实施例数据与非晶硅本征层结构不同其他参数均相同的现有技术对比,本发明与现有技术的电性能对比参见下表,主要从开路电压Voc、短路电流Isc和填充因子FF体现,可以得到本发明的太阳能电池电性能参数的提升,使太阳能电池的转换效率Eta有绝对提升1%。
Voc(mV) | Isc(mA/cm2) | FF(%) | Eta(%) | |
现有技术 | 736.5 | 38.42 | 79.97 | 22.628 |
实施例1 | 738.4 | 38.51 | 79.95 | 22.734 |
实施例2 | 737.5 | 38.58 | 79.8 | 22.705 |
实施例3 | 738 | 38.55 | 79.9 | 22.731 |
以上仅是本发明的具体应用范例,对本发明的保护范围不构成任何限制。凡采用等同变换或者等效替换而形成的技术方案,均落在本发明权利保护范围之内。
Claims (6)
1.一种叠层本征层的晶硅异质结太阳能电池电极结构,它包括N型晶体硅片(1),其特征在于:所述N型晶体硅片(1)的正面设有n面非晶硅本征层第一层(2)、n面非晶硅本征层第二层(3)和n面非晶硅本征层第三层(4),所述N型晶体硅片(1)的背面设有p面非晶硅本征层(5);所述n面非晶硅本征层第一层(2)采用纯硅烷进行沉积,所述n面非晶硅本征层第二层(3)采用硅烷和二氧化碳的混合气体进行沉积,所述n面非晶硅本征层第三层(4)采用硅烷、二氧化碳和氢气的混合气体进行沉积;所述n面非晶硅本征层第三层(4)和p面非晶硅本征层(5)的外侧均设有非晶硅掺杂层(6),所述非晶硅掺杂层(6)的外侧设有TCO导电膜(7),所述TCO导电膜(7)的外侧设有若干Ag电极(8);
所述n面非晶硅本征层第一层(2)的厚度为1~5nm,所述n面非晶硅本征层第二层(3)的厚度为1~5nm,所述n面非晶硅本征层第三层(4)的厚度为2~6nm,总厚度为5~15nm;
所述n面非晶硅本征层第一层(2)的带隙为1.4~1.6eV,所述n面非晶硅本征层第二层(3)的带隙为1.6~1.8eV,所述n面非晶硅本征层第三层(4)的带隙为1.5~1.7eV;
所述n面非晶硅本征层第二层(3)采用的硅烷和二氧化碳比例为10~50,所述n面非晶硅本征层第三层(4)采用的硅烷、二氧化碳和氢气的混合气体中,氢气和硅烷的比例为2~10、硅烷和二氧化碳比例为2~10。
2.一种权利要求1所述的叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,其特征在于,包括以下几个步骤:
第一步、选取基材N型晶体硅片(1)进行制绒、清洗处理;
第二步、通过PECVD制备正面的本征非晶硅层,正面本征非晶硅各采用三步沉积,第一步只通入纯硅烷气体形成n面非晶硅本征层第一层(2),第二步通入硅烷和二氧化碳混合气体形成n面非晶硅本征层第二层(3),第三步通入硅烷、二氧化碳、氢气混合气体形成n面非晶硅本征层第三层(4);
第三步、通过PECVD制备背面的本征非晶硅层,采用一步完成7nm沉积;
第四步、选取N型非晶硅膜为受光面掺杂层;
第五步、使用等离子体增强化学气相沉积制备n型非晶硅掺杂层;
第六步、使用等离子体化学气相沉积制备p型非晶硅掺杂层;
第七步、使用RPD或者PVD方法沉积TCO导电膜;
第八步、通过丝网印刷形成正背面Ag电极(8);
第九步、固化使得银栅线与TCO导电膜(7)之间形成良好的欧姆接触;
第十步、进行测试电池的电性能。
3.根据权利要求2所述的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,其特征在于: 所述n面非晶硅本征层第一层(2)的厚度为1~5nm,所述n面非晶硅本征层第二层(3)的厚度为1~5nm,所述n面非晶硅本征层第三层(4)的厚度为2~6nm,总厚度为5~15nm。
4.根据权利要求2所述的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,其特征在于:所述n面非晶硅本征层第二层(3)采用的硅烷和二氧化碳比例为10~50,所述n面非晶硅本征层第三层(4)采用的硅烷、二氧化碳和氢气的混合气体中,氢气和硅烷的比例为2~10、硅烷和二氧化碳比例为2~10。
5.根据权利要求2所述的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,其特征在于: 所述n型非晶硅掺杂层厚度为4~8nm,所述p型非晶硅掺杂层的厚度为7~15nm。
6.根据权利要求2所述的一种叠层本征层的晶硅异质结太阳能电池电极结构的制备方法,其特征在于:所述TCO导电膜(7)厚度为70~110nm。
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