CN105552150A - 单面横向梯度掺杂异质结电池及其制备方法 - Google Patents

单面横向梯度掺杂异质结电池及其制备方法 Download PDF

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CN105552150A
CN105552150A CN201510992824.6A CN201510992824A CN105552150A CN 105552150 A CN105552150 A CN 105552150A CN 201510992824 A CN201510992824 A CN 201510992824A CN 105552150 A CN105552150 A CN 105552150A
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孙晨光
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Abstract

本发明公开了一种单面横向梯度掺杂异质结电池及其制备方法，单面横向梯度掺杂异质结电池包括本体，所述本体具有梯度掺杂层，所述梯度掺杂层包括相互隔离的P型掺杂层和N型掺杂层，P型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个P型掺杂子层，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个N型掺杂子层。本发明能够改善电池内的电场分布，有效地提升了载流子输运效率，降低了电池的串联电阻，获得了较高的电流，同时有利于减少栅线数量，从而减小栅线对光的遮挡损失，提升了电池对光的吸收作用，提高工艺良率。

Description

单面横向梯度掺杂异质结电池及其制备方法
技术领域
本发明涉及一种单面横向梯度掺杂异质结电池及其制备方法，属于太阳电池技术领域。
背景技术
目前，非晶硅异质结电池中由于串阻过大，导致Jsc偏低。此外，异质结电池正面金属栅线对光线的遮挡也导致一定的光照损失。因此降低异质结电池的串阻，减少异质结电池正面金属栅线是异质结高效太阳电池的研究方向之一。
发明内容
本发明所要解决的技术问题是克服现有技术的缺陷，提供一种单面横向梯度掺杂异质结电池，它能够改善电池内的电场分布，有效地提升了载流子输运效率，降低了电池的串联电阻，获得了较高的电流，同时有利于减少栅线数量，从而减小栅线对光的遮挡损失，提升了电池对光的吸收作用，提高工艺良率。
为了解决上述技术问题，本发明的技术方案是：一种单面横向梯度掺杂异质结电池，它包括本体，所述本体具有梯度掺杂层，所述梯度掺杂层包括相互隔离的P型掺杂层和N型掺杂层，P型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个P型掺杂子层，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个N型掺杂子层。
进一步，所述P型掺杂层的P型掺杂子层设置有三个，分别为P-层、P层和P+层；所述N型掺杂层的N型掺杂子层设置有三个，分别为N+层、N++层和N+++层。
进一步提供了一种金属栅线的布置结构，从而实现了栅线数目的减少，减小了栅线对光的遮挡损失，提高了电池对光的吸收利用，提高了工艺良率，所述N+++层的上表面和P+层的上表面均设置有透明导电膜层，并且透明导电膜层的上表面上均设置有金属栅线层。
进一步提供了一种具体的电池结构，所述本体还具有N型晶体硅衬底和本征非晶硅薄膜层，本征非晶硅薄膜层设置在N型晶体硅衬底的正面上，所述梯度掺杂层设置在本征非晶硅薄膜层的上表面上。
进一步，所述N型掺杂层的掺杂浓度比N型晶体硅的掺杂浓度高。
进一步，所述N型晶体硅衬底的厚度为50μm～200μm和/或N型晶体硅衬底的电阻率为0～5Ω·m。
进一步，所述本征非晶硅薄膜层的厚度为3nm～10nm。
本发明还提供了一种如权利要求4至7中任一项所述的单面横向梯度掺杂异质结电池的制备方法，其特征在于该方法的步骤如下：
(1)对N型晶体硅衬底(1)进行表面处理；
(2)在N型晶体硅衬底(1)的表面生长本征非晶硅薄膜层(2)；
(3)制备梯度掺杂层：在本征非晶硅薄膜层(2)上分别沉积不同浓度的P型掺杂子层和N型掺杂子层，形成相互隔离的P型掺杂层和N型掺杂层，并且P型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个P型掺杂子层，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个N型掺杂子层；
(4)在掺杂浓度最高的N型掺杂子层和掺杂浓度最高的P型掺杂子层的上表面分别沉积透明导电膜层；
(5)在透明导电膜层上制备金属栅线层。
进一步，步骤(1)中所述的表面处理为对N型晶体硅衬底(1)进行标准RCA清洗，并采用HF溶液处理。
进一步，所述步骤(3)中，在本征非晶硅薄膜层(2)上采用掩膜技术通过PECVD沉积法生产不同浓度的P型掺杂子层和N型掺杂子层。
采用了上述技术方案后，作为发射极的梯度掺杂层采用横向梯度式高低掺杂，形成横向浓度梯度高低异质p-n结结构，这种横向高低结改善了内建场分布，有效提升了载流子输运效率，降低了电池的串联电阻，可以实现在减少栅线数目的前提下获得较高的电流，减小了栅线对光的遮挡损失，提升了电池对光的吸收利用，有效提升了工艺良率。
附图说明
图1为本发明的单面横向梯度掺杂异质结电池的结构示意图。
具体实施方式
为了使本发明的内容更容易被清楚地理解，下面根据具体实施例并结合附图，对本发明作进一步详细的说明。
如图1所示，一种单面横向梯度掺杂异质结电池，它包括本体，所述本体具有梯度掺杂层，所述梯度掺杂层包括相互隔离的P型掺杂层和N型掺杂层，P型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个P型掺杂子层，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个N型掺杂子层。
所述P型掺杂层的P型掺杂子层设置有三个，分别为P-层6、P层7和P+层8；所述N型掺杂层的N型掺杂子层设置有三个，分别为N+层5、N++层4和N+++层3；N+层5和P-层6之间隔离开并相对设置。
所述N+++层3的上表面和P+层8的上表面均设置有透明导电膜层9，并且透明导电膜层9的上表面上均设置有金属栅线层11。
所述本体还具有N型晶体硅衬底1和本征非晶硅薄膜层2，本征非晶硅薄膜层2设置在N型晶体硅衬底1的正面上，所述梯度掺杂层设置在本征非晶硅薄膜层2的上表面上。
所述N型掺杂层的掺杂浓度比N型晶体硅的掺杂浓度高。
所述N型晶体硅衬底1的厚度为50μm～200μm和/或N型晶体硅衬底1的电阻率为0～5Ω·m。
所述本征非晶硅薄膜层2的厚度为3nm～10nm。
该单面横向梯度掺杂异质结电池的制备方法，该方法的步骤如下：
(1)对N型晶体硅衬底1进行表面处理；
(2)在N型晶体硅衬底1的表面采用PECVD技术生长本征非晶硅薄膜层2；
(3)制备梯度掺杂层：在本征非晶硅薄膜层2上分别沉积不同浓度的P型掺杂子层和N型掺杂子层，形成相互隔离的P型掺杂层和N型掺杂层，并且P型掺杂层具有横向依次接触并且掺杂浓度依次递增的三个P型掺杂子层，分别为P-层6、P层7和P+层8，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的三个N型掺杂子层，分别为N+层5、N++层4和N+++层3；
(4)在N+++层3和P+层8的上表面分别采用掩膜技术通过RPD沉积透明导电膜层9；
(5)在透明导电膜层9上采用丝网印刷技术制备金属栅线层。
步骤(1)中所述的表面处理为对N型晶体硅衬底1进行标准RCA清洗，并采用HF溶液处理2min。
所述步骤(3)中，在本征非晶硅薄膜层2上采用掩膜技术通过PECVD沉积法生产不同浓度的P型掺杂子层和N型掺杂子层。
本发明的工作原理如下：
作为发射极的梯度掺杂层采用横向梯度式高低掺杂，形成横向浓度梯度高低异质p-n结结构，这种横向高低结改善了内建场分布，有效提升了载流子输运效率，降低了电池的串联电阻，可以实现在减少栅线数目的前提下获得较高的电流，减小了栅线对光的遮挡损失，提升了电池对光的吸收利用，有效提升了工艺良率。
以上所述的具体实施例，对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种单面横向梯度掺杂异质结电池，其特征在于，它包括本体，所述本体具有梯度掺杂层，所述梯度掺杂层包括相互隔离的P型掺杂层和N型掺杂层，P型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个P型掺杂子层，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个N型掺杂子层。
2.根据权利要求1所述的单面横向梯度掺杂异质结电池，其特征在于：所述P型掺杂层的P型掺杂子层设置有三个，分别为P-层(6)、P层(7)和P+层(8)；所述N型掺杂层的N型掺杂子层设置有三个，分别为N+层(5)、N++层(4)和N+++层(3)。
3.根据权利要求2所述的单面横向梯度掺杂异质结电池，其特征在于：所述N+++层(3)的上表面和P+层(8)的上表面均设置有透明导电膜层(9)，并且透明导电膜层(9)的上表面上均设置有金属栅线层(11)。
4.根据权利要求1或2或3所述的单面横向梯度掺杂异质结电池，其特征在于：所述本体还具有N型晶体硅衬底(1)和本征非晶硅薄膜层(2)，本征非晶硅薄膜层(2)设置在N型晶体硅衬底(1)的正面上，所述梯度掺杂层设置在本征非晶硅薄膜层(2)的上表面上。
5.根据权利要求4所述的单面横向梯度掺杂异质结电池，其特征在于：所述N型掺杂层的掺杂浓度比N型晶体硅的掺杂浓度高。
6.根据权利要求4所述的单面横向梯度掺杂异质结电池，其特征在于：所述N型晶体硅衬底(1)的厚度为50μm～200μm和/或N型晶体硅衬底(1)的电阻率为0～5Ω·m。
7.根据权利要求4所述的单面横向梯度掺杂异质结电池，其特征在于：所述本征非晶硅薄膜层(2)的厚度为3nm～10nm。
8.一种如权利要求4至7中任一项所述的单面横向梯度掺杂异质结电池的制备方法，其特征在于该方法的步骤如下：
(1)对N型晶体硅衬底(1)进行表面处理；
(2)在N型晶体硅衬底(1)的表面生长本征非晶硅薄膜层(2)；
(3)制备梯度掺杂层：在本征非晶硅薄膜层(2)上分别沉积不同浓度的P型掺杂子层和N型掺杂子层，形成相互隔离的P型掺杂层和N型掺杂层，并且P型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个P型掺杂子层，N型掺杂层具有横向依次接触并且掺杂浓度依次递增的多个N型掺杂子层；
(4)在掺杂浓度最高的N型掺杂子层和掺杂浓度最高的P型掺杂子层的上表面分别沉积透明导电膜层(9)；
(5)在透明导电膜层上制备金属栅线层。
9.根据权利要求8所述的制备方法，其特征在于：步骤(1)中所述的表面处理为对N型晶体硅衬底(1)进行标准RCA清洗，并采用HF溶液处理。
10.根据权利要求8所述的制备方法，其特征在于：所述步骤(3)中，在本征非晶硅薄膜层(2)上采用掩膜技术通过PECVD沉积法生产不同浓度的P型掺杂子层和N型掺杂子层。
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