CN106328724A - 一种双面晶硅太阳电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种双面晶硅太阳电池，在硅衬底的正面依次设置正面绒面结构、正面pn发射结、正面钝化减反介质层和正面电极，在硅衬底的背面依次设置背面平面结构、背面钝化减反介质层以及背面电极，其特征在于：所述背面平面结构为直接形成于硅衬底上的、经抛光工艺形成的平面的硅衬底；背面平面结构表面没有掺杂层。本发明还公开了一种制备所述双面晶硅太阳电池的方法。本发明的双面晶硅太阳电池，通过设置背面平面结构，优化了双面太阳电池的少数载流子表面复合和光学吸收特性，提高量子转换效率；本发明的制备方法工艺简单、成本低，适合大规模工业化生产。
Description
技术领域
本发明涉及一种双面太阳电池，尤其涉及一种双面晶硅太阳电池及其制备方法，属于太阳电池制备技术领域。
背景技术
相对于单面受光的传统晶体硅太阳电池，双面太阳电池利用正、背两个受光面，可以获得更高的光电流密度，很大程度地提高发电功率。根据安装地面和环境，基于双面太阳电池的光伏发电系统可以获得10至30%的功率增益。
双面太阳电池结构包括：晶体硅衬底、正、背面的绒面形貌结构、pn结发射极、背表面场、钝化减反介质层、正、背面电极等。其中，背面的绒面可以有效地提高地面和环境反射光在双面电池背面的吸收，是双面太阳电池的重要结构。目前双面太阳电池的背面都采用与正面类似的绒面形貌结构。虽然背面绒面结构有利于较大限度地吸收直射光，但不一定是双面太阳电池的最佳光吸收结构，较高的表面积会带来少数载流子复合。因此，双面太阳电池的背面结构有待进一步优化。
发明内容
本发明针对现有技术中，双面太阳电池的结构有待进一步优化的技术问题，提供一种双面晶硅太阳电池及其制备方法，减少少数载流子表面复合，提高太阳电池的光学吸收特性，从而提高量子转换效率。
一种双面晶硅太阳电池，在硅衬底的正面依次设置正面绒面结构、正面pn发射结、正面钝化减反介质层和正面电极，在硅衬底的背面依次设置背面平面结构、背面钝化减反介质层以及背面电极，其特征在于：所述背面平面结构为直接形成于硅衬底上的、经抛光工艺形成的平面的硅衬底。
进一步地，所述的背面平面结构表面没有掺杂层。
进一步地，所述正面钝化减反介质层和背面钝化减反介质层分别为由氧化硅、氮化硅、氮氧化硅、氧化铝、碳化硅、非晶硅、微晶硅、氧化铟锡或氧化钛组成的单层膜或多层膜。
进一步地，所述正面钝化减反介质层的厚度为70-100nm，背面钝化减反介质层的厚度为70-150nm。
进一步地，所述正面电极和背面电极的材质分别为银、铝、铜、镍、钛、锡、铅、镉、金或锌的一种或多种或其合金。
一种双面晶硅太阳电池的制备方法，包括如下步骤：
S1：硅片衬底表面制绒；
S2：正面掺杂形成发射结；
S3：去除背面含杂质玻璃层；
S4：湿化学法抛光制备背面平面结构，并去除背面掺杂层；
S5：制备正、背面钝化减反介质层；
S6：制备正、背面电极。
进一步地，在步骤S4中，所述湿化学法抛光制备背面平面结构所用的化学药剂为含有氢氧化钠、氢氧化钾、四甲基氢氧化铵、硝酸、磷酸、氢氟酸、乙醇、异丙醇、乙二醇中的一种或两种以上混合的水溶液；工艺温度是50至80℃。
本发明通过在双面太阳电池的背面设置抛光平面的背面平面结构，背面平面结构可以减少表面积，明显地降低光生少数载流子在背表面的复合；背面平面结构覆有减反介质层，使得正面入射的长波长光发生有效的背反射而被吸收，同时保证背面的光学吸收特性。因此，通过背面平面结构，可以优化双面太阳电池的少数载流子表面复合和光学吸收特性，提高量子转换效率。
本发明的另一方面，提出了具有背面平面结构的晶体硅双面太阳电池结构和制备方法，不需要在背面平面结构上进行掺杂，仅仅增加一道湿化学抛光工艺制备背面平面结构，适合于低成本、大批量、稳定的工业制造。
附图说明
图1为本发明实施例1的结构示意图；
图中，101是硅衬底；102是正面绒面结构；103是正面pn发射结；104是背面平面结构；105是正面钝化减反介质层；106是背面钝化减反介质层；107是正面电极；108是背面电极。
具体实施方式
以下结合附图和具体实施例对本发明作进一步详细描述，本发明中与现有技术相同的部分将参考现有技术。
实施例1
如图1所示，以p型单晶硅衬底为例，本实施例提供的双面晶硅太阳电池，在p型单晶硅衬底101的正面依次设置正面绒面结构102、正面磷掺杂形成的正面pn发射结103、正面钝化减反介质层105和正面电极107，在p型单晶硅衬底101的背面依次设置背面平面结构104、背面钝化减反介质层106以及背面电极108，其中，所述背面平面结构104为直接形成于硅衬底上的、经抛光工艺形成的平面的p型单晶衬底。
在本实施例中，正面钝化减反介质层105为氮化硅薄膜，厚度为70至80nm；背面钝化减反介质层106为非晶硅与氧化铟锡的双层膜，其中，非晶硅的厚度是10至30nm，氧化铟锡的厚度是70至120nm。正面电极和背面电极均为银电极。
实施例2
如图1所示，以n型单晶硅衬底为例，本实施例提供的双面晶硅太阳电池，在n型单晶硅衬底101的正面依次设置正面绒面结构102、正面硼掺杂形成的正面pn发射结103、正面钝化减反介质层105和正面电极107，在p型单晶硅衬底101的背面依次设置背面平面结构104、背面钝化减反介质层106以及背面电极108，其中，所述背面平面结构104为直接形成于硅衬底上的、经抛光工艺形成的平面的n型单晶衬底。
在本实施例中，正面钝化减反介质层105为氧化铝和氮化硅的双层膜，其中，氧化铝的厚度是20至30nm，氮化硅的厚度是50至70nm；背面钝化减反介质层106为氮化硅薄膜，厚度是70至80nm。正面电极和背面电极均为银电极。
实施例3
如图1所示，本实施例为本发明的双面晶硅太阳电池的制备方法应用于p型单晶硅时的情形，具体包括下述步骤：
（1）使用含氢氧化钾和异丙醇的碱性制绒液，温度是80℃，对p型单晶硅衬底101表面进行制绒，形成正面绒面形貌102，同时去除硅片切割损伤层；
（2）进行磷掺杂形成正面发射结103：磷掺杂可以采用三氯氧磷源的管式炉扩散、离子注入或涂覆含磷杂质层的扩散，扩散方阻是40至200Ω/□；
（3）采用PECVD在正面沉淀氧化硅薄膜的工艺阻挡层，厚度是50至300nm；
（4）使用氢氟酸去除背面的磷硅玻璃层；
（5）使用含四甲基氢氧化铵和异丙醇的碱性药液，进行湿化学法抛光工艺，温度是80℃，时间是300至600s，制备背面平面结构104，同时去除背面磷掺杂层；
（6）使用氢氟酸去除正面的氧化硅、磷硅玻璃；
（7）采用PECVD制备正面氮化硅105和背面非晶硅/氧化铟锡的钝化减反层106。正面氮化硅厚度是70至80nm，背面非晶硅厚度是10至30nm，氧化铟锡厚度是70至120nm；
（8）采用丝网印刷分别在正、背面制备含银栅线电极107和108，并进行高温烧结，烧结温度是200至400℃。
实施例4
如图1所示，本实施例为本发明的双面晶硅太阳电池的制备方法应用于n型单晶硅时的情形，具体包括下述步骤：
（1）使用含氢氧化钾和异丙醇的碱性制绒液，温度是80℃，对n型单晶硅衬底101表面进行制绒，形成正面绒面形貌102，同时去除硅片切割损伤层；
（2）进行硼掺杂形成正面发射结103：磷掺杂可以采用三溴化硼源的管式炉扩散、离子注入或涂覆含硼杂质层的扩散，扩散方阻是60至200Ω/□；
（3）采用PECVD在正面沉淀氧化硅薄膜的工艺阻挡层，厚度是50至300nm；
（4）使用氢氟酸去除背面的硼硅玻璃层；
（5）使用含四甲基氢氧化铵和异丙醇的碱性药液，进行进行湿化学法抛光工艺，温度是80℃，时间是300至600s，制备背面平面结构104，同时去除背面硼掺杂层；
（6）使用氢氟酸去除正面的氧化硅、硼硅玻璃；
（7）采用PECVD制备正面氧化铝/氮化硅105和背面氮化硅的钝化减反层106。正面氧化铝厚度是20至30nm，氮化硅厚度是50至70nm；背面氮化硅厚度是70至80nm；
（8）采用丝网印刷分别在正、背面制备含银栅线电极107和108，并进行高温烧结，烧结温度是800至900℃。
Claims (7)
1.一种双面晶硅太阳电池，在硅衬底的正面依次设置正面绒面结构、正面pn发射结、正面钝化减反介质层和正面电极，在硅衬底的背面依次设置背面平面结构、背面钝化减反介质层以及背面电极，其特征在于：所述背面平面结构为直接形成于硅衬底上的、经抛光工艺形成的平面的硅衬底。
2.根据权利要求1所述的双面晶硅太阳电池，其特征在于：所述的背面平面结构表面没有掺杂层。
3.根据权利要求1所述的双面晶硅太阳电池，其特征在于：所述正面钝化减反介质层和背面钝化减反介质层分别为由氧化硅、氮化硅、氮氧化硅、氧化铝、碳化硅、非晶硅、微晶硅、氧化铟锡或氧化钛组成的单层膜或多层膜。
4.根据权利要求1所述的双面晶硅太阳电池，其特征在于：所述正面钝化减反介质层的厚度为70-100nm，背面钝化减反介质层的厚度为70-150nm。
5.根据权利要求1所述的双面晶硅太阳电池，其特征在于：所述正面电极和背面电极的材质分别为银、铝、铜、镍、钛、锡、铅、镉、金或锌的一种或多种或其合金。
6.一种制备权利要求1-5任一所述的双面晶硅太阳电池的方法，其特征在于，包括如下步骤：
S1：硅片衬底表面制绒；
S2：正面掺杂形成发射结；
S3：去除背面含杂质玻璃层；
S4：湿化学法抛光制备背面平面结构，并去除背面掺杂层；
S5：制备正、背面钝化减反介质层；
S6：制备正、背面电极。
7.根据权利要求6所述的方法，其特征在于：在步骤S4中，所述湿化学法抛光制备背面平面结构所用的化学药剂为含有氢氧化钠、氢氧化钾、四甲基氢氧化铵、硝酸、磷酸、氢氟酸、乙醇、异丙醇、乙二醇中的一种或两种以上混合的水溶液；工艺温度是50至80℃。
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