JP2017535975A - 高効率n型両面太陽電池 - Google Patents
高効率n型両面太陽電池 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000002161 passivation Methods 0.000 claims abstract description 43
- 239000011159 matrix material Substances 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005498 polishing Methods 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000007639 printing Methods 0.000 abstract description 5
- 238000010248 power generation Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 14
- 230000006872 improvement Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract
Description
テクスチャ化表面を有するN型電池マトリックスと、
前記N型電池マトリックスの表面に形成されたP型ドープ領域と、
前記N型電池マトリックスの裏面にエッチングで形成された研磨パッシベーション層と、
前記研磨パッシベーション層における前記N型電池マトリックスに近い最上部にリンドーピングプロセスで形成されたN+パッシベーション層と、
前記P型ドープ領域に形成された第1シリカ酸化物層及び前記N+パッシベーション層に形成された第2シリカ酸化物層と、
前記第1シリカ酸化物層に形成された第1窒化ケイ素反射防止膜及び前記第2シリカ酸化物層に形成された第2窒化ケイ素反射防止膜と、
前記N型電池マトリックスの表面に形成された第1金属電極及び前記N型電池マトリックスの裏面に形成された第2金属電極と、を備える高効率N型両面太陽電池を提供する。
テクスチャ化表面を有するN型電池マトリックス5と、
N型電池マトリックス5の表面に形成されたP型ドープ領域4と、
N型電池マトリックス5の裏面にエッチングで形成された研磨パッシベーション層7と、
研磨パッシベーション層7におけるN型電池マトリックス5に近い最上部にリンドーピングプロセスで形成されたN+パッシベーション層6と、
P型ドープ領域4に形成された第1シリカ酸化物層3及びN+パッシベーション層6に形成された第2シリカ酸化物層8と、
第1シリカ酸化物層3に形成された第1窒化ケイ素反射防止膜2及び第2シリカ酸化物層8に形成された第2窒化ケイ素反射防止膜9と、
N型電池マトリックス5の表面に形成された第1金属電極1及びN型電池マトリックス5の裏面に形成された第2金属電極10と、を備える。
2 : 第1窒化ケイ素反射防止膜
3 : 第1シリカ酸化物層
4 : P型ドープ領域
5 : N型電池マトリックス
6 : N+パッシベーション層
7 : 研磨パッシベーション層
8 : 第2シリカ酸化物層
9 : 第2窒化ケイ素反射防止膜
10 : 第2金属電極
Claims (8)
- 高効率テクスチャ化表面を有するN型電池マトリックスと、
前記N型電池マトリックスの表面に形成されたP型ドープ領域と、
前記N型電池マトリックスの裏面にエッチングで形成された研磨パッシベーション層と、
前記研磨パッシベーション層における前記N型電池マトリックスに近い最上部にリンドーピングプロセスで形成されたN+パッシベーション層と、
前記P型ドープ領域に形成された第1シリカ酸化物層及び前記N+パッシベーション層に形成された第2シリカ酸化物層と、
前記第1シリカ酸化物層に形成された第1窒化ケイ素反射防止膜及び前記第2シリカ酸化物層に形成された第2窒化ケイ素反射防止膜と、
前記N型電池マトリックスの表面に形成された第1金属電極及び前記N型電池マトリックスの裏面に形成された第2金属電極と、を備えることを特徴とする高効率N型両面太陽電池。 - 前記N型電池マトリックスがリンをドープしたN型シリコンウェハであることを特徴とする請求項1に記載の高効率N型両面太陽電池。
- 前記P型ドープ領域のスクエア抵抗が30Ω/□~130Ω/□であることを特徴とする請求項1に記載の高効率N型両面太陽電池。
- 前記研磨パッシベーション層の反射率が15%よりも大きいことを特徴とする請求項1に記載の高効率N型両面太陽電池。
- 前記N+パッシベーション層のスクエア抵抗が20Ω/□~90Ω/□であり、厚さが0.3μm~0.8μmであることを特徴とする請求項1に記載の高効率N型両面太陽電池。
- 前記第1窒化ケイ素反射防止膜の厚さが50nm~100nmであり、屈折率が2.0~2.3であることを特徴とする請求項1に記載の高効率N型両面太陽電池。
- 前記第2窒化ケイ素反射防止膜の厚さが50nm~110nmであり、屈折率が1.9~2.2であることを特徴とする請求項1に記載の高効率N型両面太陽電池。
- 前記第1金属電極と前記第2金属電極はいずれもメインゲート電極とサブゲート電極からなり、前記メインゲート電極の本数が0~5本であり、前記サブゲート電極の本数が70~110本であることを特徴とする請求項1に記載の高効率N型両面太陽電池。
Applications Claiming Priority (3)
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CN201420697301.XU CN204303826U (zh) | 2014-11-19 | 2014-11-19 | 一种高效n型双面太阳电池 |
CN201420697301.X | 2014-11-19 | ||
PCT/CN2015/078931 WO2016078365A1 (zh) | 2014-11-19 | 2015-05-14 | 高效n型双面太阳电池 |
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US (1) | US20160351741A1 (ja) |
EP (1) | EP3190629A4 (ja) |
JP (1) | JP2017535975A (ja) |
CN (1) | CN204303826U (ja) |
AU (2) | AU2015323849A1 (ja) |
WO (1) | WO2016078365A1 (ja) |
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JP7239764B1 (ja) | 2021-09-16 | 2023-03-14 | 晶科能源(海▲寧▼)有限公司 | 太陽電池及びその製造方法、光起電力モジュール |
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CN106486554B (zh) * | 2015-08-25 | 2018-06-12 | 上海神舟新能源发展有限公司 | 一种实现n型双面电池隧穿氧化层钝化的方法 |
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CN110098284A (zh) * | 2019-05-13 | 2019-08-06 | 浙江正泰太阳能科技有限公司 | 一种n型选择性发射极太阳能电池及其制造方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009147070A (ja) * | 2007-12-13 | 2009-07-02 | Sharp Corp | 太陽電池の製造方法 |
JP2010532086A (ja) * | 2007-04-12 | 2010-09-30 | アプライド マテリアルズ インコーポレイテッド | 太陽電池の窒化シリコンパッシベーション |
CN102315284A (zh) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | 用叠层膜同时钝化p型和n型掺杂层的电池结构及其方法 |
JP2013161847A (ja) * | 2012-02-02 | 2013-08-19 | Shin Etsu Chem Co Ltd | 太陽電池 |
WO2014098016A1 (ja) * | 2012-12-18 | 2014-06-26 | PVG Solutions株式会社 | 太陽電池セル及びその製造方法 |
US20140261666A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Methods of manufacturing a low cost solar cell device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4232597B2 (ja) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
DE102008056456A1 (de) * | 2008-11-07 | 2010-06-17 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
US8153456B2 (en) * | 2010-01-20 | 2012-04-10 | Varian Semiconductor Equipment Associates, Inc. | Bifacial solar cell using ion implantation |
CN103026494A (zh) * | 2010-07-16 | 2013-04-03 | 希拉克电池株式会社 | 具有硼扩散层的硅太阳能电池单元及其制造方法 |
CN102169923B (zh) * | 2011-03-05 | 2013-03-27 | 常州天合光能有限公司 | 钝化n型硅太阳能电池的p型掺杂层的方法及电池结构 |
CN203103335U (zh) | 2012-12-26 | 2013-07-31 | 广东爱康太阳能科技有限公司 | 一种双面受光太阳电池 |
CN103887347B (zh) * | 2014-03-13 | 2017-04-05 | 中国东方电气集团有限公司 | 一种双面p型晶体硅电池结构及其制备方法 |
CN104218123A (zh) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源(太仓)有限公司 | 基于离子注入工艺的n型IBC硅太阳能电池制作方法 |
CN204303826U (zh) * | 2014-11-19 | 2015-04-29 | 上海神舟新能源发展有限公司 | 一种高效n型双面太阳电池 |
-
2014
- 2014-11-19 CN CN201420697301.XU patent/CN204303826U/zh not_active Expired - Fee Related
-
2015
- 2015-05-14 WO PCT/CN2015/078931 patent/WO2016078365A1/zh active Application Filing
- 2015-05-14 US US14/912,861 patent/US20160351741A1/en not_active Abandoned
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- 2015-05-14 AU AU2015101917A patent/AU2015101917A4/en not_active Ceased
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010532086A (ja) * | 2007-04-12 | 2010-09-30 | アプライド マテリアルズ インコーポレイテッド | 太陽電池の窒化シリコンパッシベーション |
JP2009147070A (ja) * | 2007-12-13 | 2009-07-02 | Sharp Corp | 太陽電池の製造方法 |
CN102315284A (zh) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | 用叠层膜同时钝化p型和n型掺杂层的电池结构及其方法 |
JP2013161847A (ja) * | 2012-02-02 | 2013-08-19 | Shin Etsu Chem Co Ltd | 太陽電池 |
WO2014098016A1 (ja) * | 2012-12-18 | 2014-06-26 | PVG Solutions株式会社 | 太陽電池セル及びその製造方法 |
US20140261666A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Methods of manufacturing a low cost solar cell device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110137305A (zh) * | 2019-05-06 | 2019-08-16 | 上海神舟新能源发展有限公司 | 一种p型多晶硅选择性发射极双面电池的制备方法 |
JP7239764B1 (ja) | 2021-09-16 | 2023-03-14 | 晶科能源(海▲寧▼)有限公司 | 太陽電池及びその製造方法、光起電力モジュール |
JP2023043822A (ja) * | 2021-09-16 | 2023-03-29 | 晶科能源(海▲寧▼)有限公司 | 太陽電池及びその製造方法、光起電力モジュール |
JP2023078184A (ja) * | 2021-09-16 | 2023-06-06 | 晶科能源(海▲寧▼)有限公司 | 太陽電池及びその製造方法、光起電力モジュール |
US11804564B2 (en) | 2021-09-16 | 2023-10-31 | Jinko Solar Co., Ltd. | Solar cell, manufacturing method thereof, and photovoltaic module |
JP7420992B2 (ja) | 2021-09-16 | 2024-01-23 | 晶科能源股分有限公司 | 太陽電池及びその製造方法、光起電力モジュール |
JP7461573B2 (ja) | 2021-09-16 | 2024-04-03 | 晶科能源股分有限公司 | 太陽電池及びその製造方法、光起電力モジュール |
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AU2015101917A4 (en) | 2019-05-02 |
US20160351741A1 (en) | 2016-12-01 |
EP3190629A1 (en) | 2017-07-12 |
WO2016078365A1 (zh) | 2016-05-26 |
AU2015323849A1 (en) | 2016-06-02 |
CN204303826U (zh) | 2015-04-29 |
EP3190629A4 (en) | 2018-05-02 |
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