JP5795492B2 - 薄膜太陽電池 - Google Patents
薄膜太陽電池 Download PDFInfo
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- JP5795492B2 JP5795492B2 JP2011110478A JP2011110478A JP5795492B2 JP 5795492 B2 JP5795492 B2 JP 5795492B2 JP 2011110478 A JP2011110478 A JP 2011110478A JP 2011110478 A JP2011110478 A JP 2011110478A JP 5795492 B2 JP5795492 B2 JP 5795492B2
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- photoelectric conversion
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- 239000010409 thin film Substances 0.000 title claims description 58
- 239000010408 film Substances 0.000 claims description 112
- 238000006243 chemical reaction Methods 0.000 claims description 100
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 79
- 239000012535 impurity Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910004205 SiNX Inorganic materials 0.000 claims description 17
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 17
- 230000031700 light absorption Effects 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229960001296 zinc oxide Drugs 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- JUGMVQZJYQVQJS-UHFFFAOYSA-N [B+3].[O-2].[Zn+2] Chemical compound [B+3].[O-2].[Zn+2] JUGMVQZJYQVQJS-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- -1 SnO 2 ) Chemical compound 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (10)
- 基板と、
前記基板の上に位置する第1光電変換部と、
前記第1光電変換部と前記基板の間に位置し、第2真性層を含む第2光電変換部と、
前記第1光電変換部を透過した光を前記第1光電変換部に反射する後面反射層と、
前記第1光電変換部と前記第2光電変換部の間に位置する第1中間反射層と、
前記後面反射層の上に位置する後面電極と
を含み、
前記第1光電変換部は光吸収用第1真性層と、n型不純物またはp型不純物の内の1つの不純物を含む1つのドーピング層で形成され、
前記後面反射層は前記後面電極と接触し、n型不純物またはp型不純物がドーピングされた第1後面反射膜及び700nm以上の波長を有する太陽光成分に対して400cm−1以上の光吸収係数を有し、前記第1後面反射膜に比べて電気伝導度が高い物質からなる第2後面反射膜を備え、前記第1後面反射膜は前記第1光電変換部の第1真性層と直接接触し、
前記第1後面反射膜はn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化物(μc−SiOx:H)、n型不純物またはp型不純物がドーピングされた微結晶シリコン窒化物(μc−SiNx:H)及びn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化窒化物(μc−SiOxNy:H)の中の一つからなり、
前記第2後面反射膜はAZOまたはBZOからなり、
前記第1中間反射層は、前記ドーピング層と直接接触する第1中間反射膜及び、前記第1中間反射膜と前記第2真性層に各々接触する第2中間反射膜を含み、前記第1中間反射膜はn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化物(μc−SiOx:H)、n型不純物またはp型不純物がドーピングされた微結晶シリコン窒化物(μc−SiNx: H)及びn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化窒化物(μc−SiOxNy: H)の中の一つからなり、前記第2中間反射膜は前記第1中間反射膜と反対導電型の不純物がドーピングされた微結晶シリコン酸化物(μc−SiOx:H)と微結晶シリコン窒化物(μc−SiNx: H)及び微結晶シリコン酸化窒化物(μc−SiOxNy: H)の中の一つからなる薄膜太陽電池。 - 前記第1後面反射膜は700nm以上の波長を有する太陽光成分に対して400cm−1以下の光吸収係数を有する物質からなる請求項1記載の薄膜太陽電池。
- 前記第1後面反射膜は800nmの波長で1.5乃至2.5の屈折率を有する物質からなる請求項1記載の薄膜太陽電池。
- 前記第1真性層は800nmの波長で3乃至5の屈折率を有する物質からなる請求項3記載の薄膜太陽電池。
- 前記第1真性層は水素化された非晶質シリコン(a−Si:H)または水素化された微結晶シリコン(μc−Si:H)を含む請求項4記載の薄膜太陽電池。
- 前記第2後面反射膜は前記第1後面反射膜の後面に位置する請求項1記載の薄膜太陽電池。
- 前記光電変換部は前記第2光電変換部と前記基板の間に位置する第3光電変換部をさらに含む請求項1記載の薄膜太陽電池。
- 前記第1光電変換部乃至前記第3光電変換部の間には第2中間反射層が位置する請求項7記載の薄膜太陽電池。
- 前記第2中間反射層はn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化物(μc−SiOx: H)、n型不純物またはp型不純物がドーピングされた微結晶シリコン窒化物(μc−SiNx: H)及びn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化窒化物(μc−SiOxNy: H)の中の一つからなるか、AZOまたはBZOからなる第1中間反射膜を含む請求項8記載の薄膜太陽電池。
- 前記第2中間反射層はn型不純物またはp型不純物がドーピングされた微結晶シリコン酸化物(μc−SiOx:H)、n型不純物またはp型不純物がドーピングされた微結晶シリコン窒化物(μc−SiNx:H)及びn型不純物または p型不純物がドーピングされた微結晶シリコン酸化窒化物(μc−SiOxNy:H)の中の一つからなる第2中間反射膜をさらに含む請求項9記載の薄膜太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020100131821A KR101292061B1 (ko) | 2010-12-21 | 2010-12-21 | 박막 태양전지 |
KR10-2010-0131821 | 2010-12-21 |
Publications (2)
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JP2012134440A JP2012134440A (ja) | 2012-07-12 |
JP5795492B2 true JP5795492B2 (ja) | 2015-10-14 |
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JP2011110478A Expired - Fee Related JP5795492B2 (ja) | 2010-12-21 | 2011-05-17 | 薄膜太陽電池 |
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Country | Link |
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US (1) | US20110180128A1 (ja) |
EP (1) | EP2469609B1 (ja) |
JP (1) | JP5795492B2 (ja) |
KR (1) | KR101292061B1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
DE102011081655A1 (de) * | 2011-08-26 | 2013-02-28 | Robert Bosch Gmbh | Dünnschicht-Solarzelle |
CN103022208A (zh) * | 2011-09-26 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 利用二氧化硅中间层制作高效率双结硅薄膜太阳能电池 |
CN103022172A (zh) * | 2011-09-26 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 利用二氧化硅制作背反射层之高效率薄膜太阳能电池 |
US8597970B2 (en) | 2011-12-21 | 2013-12-03 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
US8679889B2 (en) | 2011-12-21 | 2014-03-25 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
KR102223562B1 (ko) * | 2011-12-21 | 2021-03-04 | 선파워 코포레이션 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
JP6383291B2 (ja) | 2011-12-26 | 2018-08-29 | ソレクセル、インコーポレイテッド | 太陽電池の光捕獲性を改善するシステム及び方法 |
CN102694049A (zh) * | 2012-06-07 | 2012-09-26 | 保定天威薄膜光伏有限公司 | 一种具备新型中间层结构的硅薄膜太阳能电池 |
CN103579403A (zh) * | 2012-08-07 | 2014-02-12 | 江苏武进汉能光伏有限公司 | 硅薄膜三叠层太阳电池 |
CN103618010A (zh) * | 2013-10-21 | 2014-03-05 | 福建铂阳精工设备有限公司 | 硅基薄膜太阳能电池背电极及制造方法、硅基薄膜太阳能电池 |
CN103579400B (zh) * | 2013-11-06 | 2016-08-24 | 湖南共创光伏科技有限公司 | 一种电池用复合中间反射层以及多结多叠层硅基薄膜电池 |
JP2015220339A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社東芝 | 固体撮像装置 |
CN104966757B (zh) * | 2015-06-15 | 2017-03-29 | 广东汉能薄膜太阳能有限公司 | 一种高转化效率的纳米硅薄膜太阳电池及其制备方法 |
CN105514181A (zh) * | 2015-12-14 | 2016-04-20 | 山东新华联新能源科技有限公司 | 绒面结构的tco薄膜、其制备方法及薄膜太阳能电池 |
US11233162B2 (en) | 2017-03-31 | 2022-01-25 | The Boeing Company | Method of processing inconsistencies in solar cell devices and devices formed thereby |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5429685A (en) * | 1992-11-16 | 1995-07-04 | Canon Kabushiki Kaisha | Photoelectric conversion element and power generation system using the same |
JP2984537B2 (ja) * | 1994-03-25 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
US6951689B1 (en) * | 1998-01-21 | 2005-10-04 | Canon Kabushiki Kaisha | Substrate with transparent conductive layer, and photovoltaic element |
JP2001308354A (ja) * | 2000-04-24 | 2001-11-02 | Sharp Corp | 積層型太陽電池 |
JP4193962B2 (ja) | 2000-10-31 | 2008-12-10 | 独立行政法人産業技術総合研究所 | 太陽電池用基板および薄膜太陽電池 |
JP2004289091A (ja) | 2003-03-25 | 2004-10-14 | Canon Inc | 光起電力素子 |
WO2005093856A1 (ja) * | 2004-03-26 | 2005-10-06 | Kaneka Corporation | 薄膜光電変換装置の製造方法 |
JP2006319068A (ja) * | 2005-05-11 | 2006-11-24 | Kaneka Corp | 多接合型シリコン系薄膜光電変換装置、及びその製造方法 |
US7671271B2 (en) * | 2006-03-08 | 2010-03-02 | National Science And Technology Dev. Agency | Thin film solar cell and its fabrication process |
KR100880946B1 (ko) * | 2006-07-03 | 2009-02-04 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
KR100974226B1 (ko) * | 2007-03-23 | 2010-08-06 | 엘지전자 주식회사 | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 |
JP2009094198A (ja) * | 2007-10-05 | 2009-04-30 | Kaneka Corp | ハイブリッド薄膜太陽電池の製造方法 |
EP2216826A4 (en) * | 2007-11-30 | 2016-10-12 | Kaneka Corp | SILICON THIN FILM PHOTOELECTRIC CONVERSION DEVICE |
KR100876613B1 (ko) * | 2008-05-27 | 2008-12-31 | 한국철강 주식회사 | 탄뎀 박막 실리콘 태양전지 및 그 제조방법 |
US20100313945A1 (en) * | 2008-08-21 | 2010-12-16 | Applied Materials, Inc. | Solar Cell Substrate and Methods of Manufacture |
US20100224243A1 (en) * | 2009-03-05 | 2010-09-09 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
JP2010251424A (ja) * | 2009-04-13 | 2010-11-04 | Mitsubishi Heavy Ind Ltd | 光電変換装置 |
CN102301496A (zh) * | 2009-06-10 | 2011-12-28 | 薄膜硅公司 | 光生伏打模块和制造具有多个半导体层堆叠的光生伏打模块的方法 |
JP2011199235A (ja) * | 2010-02-26 | 2011-10-06 | Sanyo Electric Co Ltd | 太陽電池 |
-
2010
- 2010-12-21 KR KR1020100131821A patent/KR101292061B1/ko not_active IP Right Cessation
-
2011
- 2011-03-30 US US13/076,095 patent/US20110180128A1/en not_active Abandoned
- 2011-04-08 EP EP11002981.6A patent/EP2469609B1/en not_active Not-in-force
- 2011-05-17 JP JP2011110478A patent/JP5795492B2/ja not_active Expired - Fee Related
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KR20120070312A (ko) | 2012-06-29 |
EP2469609B1 (en) | 2013-06-05 |
JP2012134440A (ja) | 2012-07-12 |
US20110180128A1 (en) | 2011-07-28 |
EP2469609A1 (en) | 2012-06-27 |
KR101292061B1 (ko) | 2013-08-01 |
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