JP2011199235A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2011199235A JP2011199235A JP2010144866A JP2010144866A JP2011199235A JP 2011199235 A JP2011199235 A JP 2011199235A JP 2010144866 A JP2010144866 A JP 2010144866A JP 2010144866 A JP2010144866 A JP 2010144866A JP 2011199235 A JP2011199235 A JP 2011199235A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 153
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 34
- 238000010248 power generation Methods 0.000 abstract description 20
- 239000000969 carrier Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 44
- 229910052814 silicon oxide Inorganic materials 0.000 description 43
- 239000007789 gas Substances 0.000 description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 description 41
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 27
- 239000000758 substrate Substances 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 3
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- -1 tin oxide (SnO 2 ) Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】太陽電池10が、受光面電極層2と、受光面電極層2上に積層された第1光電変換部31と、第1光電変換部31上に積層され、SiO層32bとシリコン層32a,32cとを有する反射層32と、反射層32上に積層された第2光電変換部33と、第2光電変換部33上に積層された裏面電極層4と、を含む。
【選択図】図1
Description
〈太陽電池の構成〉
以下において、本発明の第1実施形態に係る太陽電池の構成について、図1を参照しながら説明する。
本発明の第1実施形態に係る太陽電池10によれば、反射層32が、第1層32a、中間層32b、および第2層32cから構成される。そして、SiOからなる中間層32bと第1光電変換部31、もしくは第2光電変換部33との間には、それぞれ第1層32aもしくは第2層32cが形成される。そのため、太陽電池10の発電効率を向上させることができる。このような効果について、以下に詳説する。
〈太陽電池の構成〉
以下において、本発明の第2実施形態に係る太陽電池の構成について、図2を参照しながら説明する。なお、第1実施形態と同様の構成には同じ符号を用いて説明を省略する。
本発明の第2実施形態に係る太陽電池20によれば、第1実施形態の(2)、(3)、(6)、(7)および(8)と同様の効果の他、下記の効果が得られるため、太陽電池20の発電効率を向上させることができる。
本発明は上記の実施形態によって説明したが、この開示の一部をなす論述および図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例および運用技術が明らかとなろう。
以下のようにして、図1に示す実施例1に係る太陽電池10を作製した。
反射層32の構成を除き、実施例1と同様に図3に示す実施例2に係る太陽電池10を作製した。
反射層32の構成を除き、実施例1と同様に図4に示す実施例3に係る太陽電池10を作製した。
以下のようにして、図5に示す比較例に係る太陽電池20を作製した。
実施例1、実施例2、実施例3および比較例に係る太陽電池について、開放電圧、短絡電流、曲線因子および発電効率の各特性値の比較を行った。比較結果を表5に示す。尚、表5においては、比較例における各特性値を1.00として規格化して表している。
2,12…受光面電極層
3…積層体
31,131…第1光電変換部
32,132…反射層
33,133…第2光電変換部
4,14…裏面電極層
10,20…太陽電池
Claims (8)
- 受光面電極層と、
前記受光面電極層上に積層された第1光電変換部と、
前記第1光電変換部上に積層され、SiO層とシリコン層とを有する反射層と、
前記反射層上に積層された第2光電変換部と、
前記第2光電変換部上に積層された裏面電極層と、
を含むことを特徴とする太陽電池。 - 前記SiO層は、非晶質であることを特徴とする請求項1に記載の太陽電池。
- 前記シリコン層は、結晶質シリコンであることを特徴とする請求項1又は2に記載の太陽電池。
- 前記SiO層は、550nmの波長の光に対する屈折率が2.4未満であることを特徴とする請求項1ないし請求項3のいずれか1項に記載の太陽電池。
- 前記第2光電変換素子は、結晶質であることを特徴とする請求項1ないし請求項4のいずれか1項に記載の太陽電池。
- 前記第1光電変換素子は、非晶質であることを特徴とする請求項1ないし請求項5のいずれか1項に記載の太陽電池。
- 前記シリコン層は、真性シリコンであることを特徴とする請求項1ないし請求項6のいずれか1項に記載の太陽電池。
- 前記シリコン層は、一導電型シリコンであることを特徴とする請求項1ないし請求項7のいずれか1項に記載の太陽電池。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010144866A JP2011199235A (ja) | 2010-02-26 | 2010-06-25 | 太陽電池 |
PCT/JP2011/051781 WO2011105170A1 (ja) | 2010-02-26 | 2011-01-28 | 太陽電池 |
CN2011800100678A CN102763224A (zh) | 2010-02-26 | 2011-01-28 | 太阳能电池 |
US13/585,497 US20120305062A1 (en) | 2010-02-26 | 2012-08-14 | Solar cell |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010041482 | 2010-02-26 | ||
JP2010041482 | 2010-02-26 | ||
JP2010144866A JP2011199235A (ja) | 2010-02-26 | 2010-06-25 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011199235A true JP2011199235A (ja) | 2011-10-06 |
JP2011199235A5 JP2011199235A5 (ja) | 2012-12-13 |
Family
ID=44506591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010144866A Pending JP2011199235A (ja) | 2010-02-26 | 2010-06-25 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120305062A1 (ja) |
JP (1) | JP2011199235A (ja) |
CN (1) | CN102763224A (ja) |
WO (1) | WO2011105170A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101292061B1 (ko) * | 2010-12-21 | 2013-08-01 | 엘지전자 주식회사 | 박막 태양전지 |
JP2014063769A (ja) * | 2011-01-21 | 2014-04-10 | Sanyo Electric Co Ltd | 太陽電池 |
TW201334211A (zh) * | 2012-01-04 | 2013-08-16 | Tel Solar Ag | 薄膜太陽能電池的中間反射結構 |
CN103066153A (zh) * | 2012-12-28 | 2013-04-24 | 福建铂阳精工设备有限公司 | 硅基薄膜叠层太阳能电池及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308354A (ja) * | 2000-04-24 | 2001-11-02 | Sharp Corp | 積層型太陽電池 |
WO2005011001A1 (ja) * | 2003-07-24 | 2005-02-03 | Kaneka Corporation | 積層型光電変換装置 |
JP2006319068A (ja) * | 2005-05-11 | 2006-11-24 | Kaneka Corp | 多接合型シリコン系薄膜光電変換装置、及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4158267B2 (ja) * | 1999-03-15 | 2008-10-01 | 富士電機ホールディングス株式会社 | 非単結晶太陽電池 |
US7671271B2 (en) * | 2006-03-08 | 2010-03-02 | National Science And Technology Dev. Agency | Thin film solar cell and its fabrication process |
US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
-
2010
- 2010-06-25 JP JP2010144866A patent/JP2011199235A/ja active Pending
-
2011
- 2011-01-28 CN CN2011800100678A patent/CN102763224A/zh active Pending
- 2011-01-28 WO PCT/JP2011/051781 patent/WO2011105170A1/ja active Application Filing
-
2012
- 2012-08-14 US US13/585,497 patent/US20120305062A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308354A (ja) * | 2000-04-24 | 2001-11-02 | Sharp Corp | 積層型太陽電池 |
WO2005011001A1 (ja) * | 2003-07-24 | 2005-02-03 | Kaneka Corporation | 積層型光電変換装置 |
JP2006319068A (ja) * | 2005-05-11 | 2006-11-24 | Kaneka Corp | 多接合型シリコン系薄膜光電変換装置、及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102763224A (zh) | 2012-10-31 |
WO2011105170A1 (ja) | 2011-09-01 |
US20120305062A1 (en) | 2012-12-06 |
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