JP7461573B2 - 太陽電池及びその製造方法、光起電力モジュール - Google Patents
太陽電池及びその製造方法、光起電力モジュール Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 18
- 239000010410 layer Substances 0.000 claims description 260
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 81
- 238000002161 passivation Methods 0.000 claims description 71
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 68
- 238000009792 diffusion process Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 65
- 229910052698 phosphorus Inorganic materials 0.000 claims description 56
- 239000011574 phosphorus Substances 0.000 claims description 56
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 55
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 39
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 claims description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 28
- 229910052796 boron Inorganic materials 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910020286 SiOxNy Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 49
- 230000003647 oxidation Effects 0.000 description 48
- 238000007254 oxidation reaction Methods 0.000 description 48
- 238000000034 method Methods 0.000 description 36
- 238000006243 chemical reaction Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 25
- 239000007789 gas Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 230000005641 tunneling Effects 0.000 description 13
- 230000006798 recombination Effects 0.000 description 11
- 238000005215 recombination Methods 0.000 description 11
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910019213 POCl3 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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Description
互いに反対である正面と背面を有するN型半導体基板と、
前記N型半導体基板の正面に設けられる第1パッシベーション層と、
前記第1パッシベーション層を通って前記N型半導体基板に電気的に接続される第1電極と、
前記N型半導体基板の背面に設けられるリンドープ多結晶シリコン層と、
前記N型半導体基板の背面とリンドープ多結晶シリコン層との間に介在される、窒素及びリンを含む酸化ケイ素層と、
前記リンドープ多結晶シリコン層の表面に設けられる第2パッシベーション層と、
前記第2パッシベーション層を通って前記リンドープ多結晶シリコン層に電気的に接続される第2電極と、を含む太陽電池を提供する。
/又は、前記窒素ドープ酸化ケイ素層中の窒素ドーピング濃度は、N型半導体基板からリンドープ多結晶シリコン層へ徐々に低減する。
表面テクスチャリング処理されたN型半導体基板の正面に対してホウ素拡散を行い、ホウ素拡散層を形成する工程と、
前記N型半導体基板の背面に、窒素及びリンを含有する酸化層(以下、「窒素リン含有酸化層」とも称する。)を形成する工程と、
前記窒素リン含有酸化層の表面に多結晶シリコン層を堆積し、前記多結晶シリコン層に対して第2リン拡散を行い、リンドープ多結晶シリコン層を形成する工程と、
前記リンドープ多結晶シリコン層の表面に、第2パッシベーション層を形成する工程と、
前記ホウ素拡散層の表面に第1パッシベーション層を形成し、第1パッシベーション層を通って前記ホウ素拡散層に電気的に接続される第1電極を形成する工程と、
前記第2パッシベーション層を通って前記リンドープ多結晶シリコンに電気的に接続される第2電極を形成する工程と、含む太陽電池の製造方法を提供する。
互いに反対する正面及び背面を有するN型半導体基板10と、
N型半導体基板10の正面に設けられる第1パッシベーション層30と、
第1パッシベーション層30を通ってN型半導体基板10に電気的に接続される第1電極40と、
N型半導体基板10の背面に設けられるリンドープ多結晶シリコン層60と、
N型半導体基板10の背面とリンドープ多結晶シリコン層60との間に介在される、窒素リン含有酸化層50と、
リンドープ多結晶シリコン層60の表面に設けられる第2パッシベーション層70と、
第2パッシベーション層70を通ってリンドープ多結晶シリコン層60に電気的に接続
される第2電極80と、を含む太陽電池を提供する。
、電子は多結晶シリコン層中に横方向に沿って輸送されて金属に集まり、金属接触の再結合電流を大幅に低減し、電池の開路電圧と短絡電流を向上することができる。
表面テクスチャリング処理されたN型半導体基板10の正面に対してホウ素拡散を行い、ホウ素拡散層20を形成する工程S10と、
N型半導体基板10の背面に対して酸化処理を行って窒素リン含有酸化層50を形成する工程S20と、
窒素リン含有酸化層50の表面に多結晶シリコン層を堆積し、多結晶シリコン層に対して第2リン拡散を行ってリンドープ多結晶シリコン層60を形成する工程S30と、
リンドープ多結晶シリコン層60の表面に第2パッシベーション層70を形成する工程S40と、
ホウ素拡散層20の表面に第1パッシベーション層30を形成し、第1パッシベーション層30に第1電極40を形成し、第2パッシベーション層70に第2電極を形成する工程S50と、を含む。
行うことができる。酸化処理は、オゾン酸化法、高温熱酸化法、硝酸酸化法のうちのいずれかを使用しても良い。また、リン拡散処理とは、高温条件下(通常600℃超)で5価のリン原子を拡散させることによりドープ層を形成することを意味する。
、半導体基板の背面に、銀ペーストを用いて背面バスバーと背面フィンガーとを印刷し、乾燥して第2電極80を形成する。また、最後に、乾燥した電池シートを焼成して太陽電池を製造してもよい。
工程S10:表面テクスチャリング処理されたN型半導体基板10の正面に対してホウ素拡散を行って、ホウ素拡散層20を形成した。
工程S10:表面テクスチャリング処理されたN型半導体基板10の正面に対してホウ素拡散を行ってホウ素拡散層20を形成した。
工程S10:表面テクスチャリング処理されたN型半導体基板10の正面に対してホウ素拡散を行ってホウ素拡散層20を形成した。
実施例1の工程S20~S23の代わりに、LPCVD法により半導体基板の背面に厚さが約10ÅのSiO2層を生成した。具体的な条件パラメータについて、流量を15L/minとしてO2を5min導入した後、O2の導入を停止し、温度を500℃に維持しながら550s反応させて酸化ケイ素層を形成した。上記以外には、実施例1と同様に実行した。
本願の保護範囲内に含まれると理解するべきである。
20-ホウ素拡散層;
30-第1パッシベーション層;
40-第1電極;
50-窒素リン含有酸化層;
501-第1酸化副層;
502-第2酸化副層;
503-第3酸化副層;
60-リンドープ多結晶シリコン層;
70-第2パッシベーション層;
80-第2電極。
Claims (11)
- 互いに反対する正面と背面を有するN型結晶シリコン基板と、
前記N型結晶シリコン基板の前記正面に設けられるホウ素拡散層と、
前記ホウ素拡散層の表面に設けられる第1パッシベーション層と、
前記第1パッシベーション層を通って前記ホウ素拡散層とオーミックコンタクトを形成する第1電極と、
前記N型結晶シリコン基板の前記背面に設けられる、ハイ-ロー接合が形成されたリンドープ多結晶シリコン層と、
前記N型結晶シリコン基板の前記背面と前記リンドープ多結晶シリコン層との間に介在される、単一層又は多層の窒素リン含有酸化ケイ素層と、
前記リンドープ多結晶シリコン層の表面に設けられる第2パッシベーション層と、
前記第2パッシベーション層を通って前記リンドープ多結晶シリコン層とオーミックコンタクトを形成する第2電極と、を含む、ことを特徴とする太陽電池。 - 前記窒素リン含有酸化ケイ素層は、単一層の酸化層構造である、請求項1に記載の太陽電池。
- 前記窒素リン含有酸化ケイ素層は、第1酸化副層と第2酸化副層と第3酸化副層とを含む多層の酸化層構造であり、前記第1酸化副層は、窒素ドープ酸化ケイ素層であり、前記第2酸化副層は、材質が二酸化ケイ素であり、前記第3酸化副層がリンドープ酸化ケイ素層である、請求項1に記載の太陽電池。
- 前記窒素ドープ酸化ケイ素層は、SiOxNy(式中、y/(x+y)<15%)を含む、請求項3に記載の太陽電池。
- 前記リンドープ酸化ケイ素層中のリンドーピング濃度は1×1010cm-3~1×1018cm-3である、請求項3に記載の太陽電池。
- 前記窒素リン含有酸化ケイ素層の全体の厚さは、16Å以下である、請求項1に記載の太陽電池。
- 前記リンドープ多結晶シリコン層におけるドーピング濃度は1×1019cm-3~1×1021cm-3である、請求項1に記載の太陽電池。
- 前記第1パッシベーション層は、窒化ケイ素、酸窒化ケイ素、及び酸化アルミニウムのうちの少なくとも1つを含む、請求項1に記載の太陽電池。
- 前記第2パッシベーション層は、窒化ケイ素、酸窒化ケイ素、及び酸化アルミニウムのうちの少なくとも1つを含む、請求項1に記載の太陽電池。
- 前記第1電極は、銀電極又は銀/アルミニウム電極であり、及び/又は、
前記第2電極は、銀電極である、請求項1に記載の太陽電池。 - 請求項1~10のいずれか一項に記載の太陽電池を含む太陽電池ストリングを複数含むことを特徴とする光起電力モジュール。
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