CN115274927A - 一种TOPCon太阳能电池的制作方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 15
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 18
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- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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Abstract
本发明公开了一种TOPCon太阳能电池的制作方法,包括:在N型硅基片的一侧表面上依序层叠形成硼扩散层、第一氧化铝钝化层和第一氮化硅层;在所述N型硅基片的另一侧表面上依序层叠形成隧穿钝化接触层、掺杂多晶硅层、第二氧化铝钝化层和第二氮化硅层;进行第一光注入退火处理;在所述第一氮化硅层和所述第二氮化硅层上分别形成电极;进行第二光注入退火处理。本发明提高了TOPCon太阳能电池的钝化性能。
Description
技术领域
本发明涉及光伏发电技术领域,尤其涉及一种TOPCon太阳能电池的制作方法。
背景技术
钝化接触太阳能电池(Tunnel Oxide Passivated Contact solar cell,TOPCon)该电池的特点在于在N型硅基底的背光面形成一层超薄隧穿氧化层,然后再沉积一层重掺杂多晶硅层,二者共同形成了钝化接触结构,超薄隧穿氧化层阻挡了少数载流子通过,提升了少数载流子寿命,重掺杂多晶硅层大大降低了金属复合。
常规的钝化接触太阳能电池仅在电池的受光面形成氧化铝钝化层,由于掺杂多晶硅层具有光寄生效应,当光传输到掺杂多晶硅层的时候,部分光容易被掺杂多晶硅层吸收而不能形成载流子收集,从而引起电池的电流密度降低的问题,进而无法提升电池的效率。
发明内容
鉴于现有技术存在的不足,本发明提供了一种TOPCon太阳能电池的制作方法,包括:
在N型硅基片的一侧表面上依序层叠形成硼扩散层、第一氧化铝钝化层和第一氮化硅层;
在所述N型硅基片的另一侧表面上依序层叠形成隧穿钝化接触层、掺杂多晶硅层、第二氧化铝钝化层和第二氮化硅层;
进行第一光注入退火处理;
在所述第一氮化硅层和所述第二氮化硅层上分别形成电极;
进行第二光注入退火处理。
优选地,所述N型硅基片的电阻率小于或等于3Ω·cm。
优选地,所述第一氧化铝钝化层和所述第二氧化铝钝化层的生长厚度均为3nm~5nm。
优选地,所述隧穿钝化接触层的沉积温度为610℃~630℃,反应气体为氧气,所述隧穿钝化接触层的沉积厚度为1nm~2nm。
优选地,形成所述掺杂多晶硅层包括:
在所述隧穿钝化接触层上沉积形成100nm~130nm的多晶硅层;
对所述多晶硅层进行磷掺杂;
其中,所述多晶硅层的沉积温度为570℃~600℃,反应气为硅烷,所述磷掺杂的扩散温度为860℃~880℃。
优选地,所述第一氮化硅层和所述第二氮化硅层的厚度为70nm~80nm。
与现有技术相比,本发明中,在TOPCon太阳能电池的两侧均形成了氧化铝钝化层,之后进行光注入退火处理,以提高了TOPCon太阳能电池的钝化性能。
附图说明
图1为本发明实施例的TOPCon太阳能电池的制作方法的流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的,并且本发明并不限于这些实施方式。
在此,还需要说明的是,为了避免因不必要的细节而模糊了本发明,在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤,而省略了与本发明关系不大的其他细节。
针对现有技术中存在的技术问题,本实施例提供了一种TOPCon太阳能电池的制作方法。如图1所示,该TOPCon太阳能电池的制作方法包括:
步骤1、在N型硅基片的一侧表面上依序层叠形成硼扩散层、第一氧化铝钝化层和第一氮化硅层。
步骤2、在所述N型硅基片的另一侧表面上依序层叠形成隧穿钝化接触层、掺杂多晶硅层、第二氧化铝钝化层和第二氮化硅层。
步骤3、进行第一光注入退火处理。
步骤4、在所述第一氮化硅层和所述第二氮化硅层上分别形成电极。
步骤5、进行第二光注入退火处理。
在本实施例中,在TOPCon太阳能电池的两侧(受光面和背光面)均形成了氧化铝钝化层,并且在丝网印刷前增加一次光注入工艺。本实施例中,除了电池的受光面之外,还在电池的背光面上形成氧化铝钝化层的目的在于,由于氧化铝层含有大量的氢,因此可以化学钝化背表面的缺陷,从而有效地降低了复合率。另外,在电池的背光面上形成氧化铝钝化层还可以进一步阻挡硅基体的氢原子溢出表面。
此外,在形成电极之前,进行了一次光注入退火处理的目的在于,形成电极时,金属化银浆印刷烧结会破环一部分氮化硅层,因此在形成电极之前进行一次光注入退火处理去除N型硅基片的表面和内部缺陷。
形成电极之后进行另一次光注入退火处理的目的在于,电极形成过程的高温烧结会在金属接触区域引起较为严重的缺陷复合,因此经过另一次光注入退火处理使氮化硅层的氢与金属接触区域的缺陷进行结合,以此来提高金属接触区域的钝化效果,从而整体电池效率会有较好的提升。
具体地,所述N型硅基片的电阻率小于或等于3Ω·cm。所述第一氧化铝钝化层和所述第二氧化铝钝化层的生长厚度均为3nm~5nm。所述隧穿钝化接触层的沉积温度为610℃~630℃,反应气体为氧气,所述隧穿钝化接触层的沉积厚度为1nm~2nm。所述第一氮化硅层和所述第二氮化硅层的厚度为70nm~80nm。
较佳地,形成所述掺杂多晶硅层包括:
在所述隧穿钝化接触层上沉积形成100nm~130nm的多晶硅层;
对所述多晶硅层进行磷掺杂;
其中,所述多晶硅层的沉积温度为570℃~600℃,反应气为硅烷,所述磷掺杂的扩散温度为860℃~880℃。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (6)
1.一种TOPCon太阳能电池的制作方法,其特征在于,包括:
在N型硅基片的一侧表面上依序层叠形成硼扩散层、第一氧化铝钝化层和第一氮化硅层;
在所述N型硅基片的另一侧表面上依序层叠形成隧穿钝化接触层、掺杂多晶硅层、第二氧化铝钝化层和第二氮化硅层;
进行第一光注入退火处理;
在所述第一氮化硅层和所述第二氮化硅层上分别形成电极;
进行第二光注入退火处理。
2.根据权利要求1所述的TOPCon太阳能电池的制作方法,其特征在于,所述N型硅基片的电阻率小于或等于3Ω·cm。
3.根据权利要求1所述的TOPCon太阳能电池的制作方法,其特征在于,所述第一氧化铝钝化层和所述第二氧化铝钝化层的生长厚度均为3nm~5nm。
4.根据权利要求1所述的TOPCon太阳能电池的制作方法,其特征在于,所述隧穿钝化接触层的沉积温度为610℃~630℃,反应气体为氧气,所述隧穿钝化接触层的沉积厚度为1nm~2nm。
5.根据权利要求4所述的TOPCon太阳能电池的制作方法,其特征在于,形成所述掺杂多晶硅层包括:
在所述隧穿钝化接触层上沉积形成100nm~130nm的多晶硅层;
对所述多晶硅层进行磷掺杂;
其中,所述多晶硅层的沉积温度为570℃~600℃,反应气为硅烷,所述磷掺杂的扩散温度为860℃~880℃。
6.根据权利要求1所述的TOPCon太阳能电池的制作方法,其特征在于,所述第一氮化硅层和所述第二氮化硅层的厚度为70nm~80nm。
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