TWI746424B - 以改良之前接觸式異質接面製程來製造太陽能電池的方法及其太陽能電池 - Google Patents

以改良之前接觸式異質接面製程來製造太陽能電池的方法及其太陽能電池 Download PDF

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TWI746424B
TWI746424B TW104129347A TW104129347A TWI746424B TW I746424 B TWI746424 B TW I746424B TW 104129347 A TW104129347 A TW 104129347A TW 104129347 A TW104129347 A TW 104129347A TW I746424 B TWI746424 B TW I746424B
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大維 Ｄ 史密斯
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美商太陽電子公司
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Abstract

利用改良之前接觸式異質接面製程來製造太陽能電池的方法、及其所得之太陽能電池將被描述。在一實例中，太陽能電池包含具有第一及第二光接收表面的基板。穿隧介電層設置於第一及第二光接收表面上。N型多晶矽層設置於設置於第一光接收表面上之穿隧介電層的部分上。P型多晶矽層設置於設置於第二光接收表面上之穿隧介電層的部分上。透明導電氧化層設置在N型多晶矽層上及在P型多晶矽層上。第一組導電接觸設置在設置在N型多晶矽層上之透明導電氧化層的部分上。第二組導電接觸設置在設置在P型多晶矽層上之透明導電氧化層的部分上。

Description

以改良之前接觸式異質接面製程來製造太陽能電池的方 法及其太陽能電池 相關申請案之交互參照
本專利申請案主張於2014年9月5日提出之美國專利臨時申請案第62/046,717號之效益，其全部內容於此併入本文作為參考。
本發明之實施例係有關再生能源領域，特別是利用改良之前接觸式異質接面製程來製造太陽能電池的方法、及其所得之太陽能電池。
俗稱為太陽能電池之光伏打電池，為用以將太陽輻射直接轉換為電能之眾所周知的裝置。一般而言，是利用半導體製程技術來形成接近於基板表面的p-n接面，以製造太陽能電池於半導體晶片或基板上。入射基板表面並進入基板之太陽輻射在基板塊中產生電子及電洞對。電子及電洞對移動至基板中之p-摻雜及n-摻雜區域，從而於摻雜區域間產生電壓差。摻雜區域被連接至太陽能電池上之導電區域以將來自電池之電流引導至與其耦接之外部電路。
效率是太陽能電池的重要特性，因為其與太陽能電池產生電力之能力直接相關。同樣的，生產太陽能電池的效率與此種太陽能電池的成本效益直接相關。據此，用於增加太陽能電池之效率的技術或用於增加太陽能電池生產效率的技術是普遍受期望的。本發明的一些實施例允許藉由提供製造太陽能電池結構之新穎的製程來增加太陽能電池的生產效率。本揭露的一些實施例允許藉由提供新穎的太陽能電池結構來增加太陽能電池效率。
本發明係提供一種製造太陽能電池的方法，該方法包含提供具有第一光接收表面及第二光接收表面的基板。方法亦包含紋理化該第一光接收表面及該第二光接收表面的其中之一或兩者。方法亦包含形成穿隧介電層在第一光接收表面及第二光接收表面上。方法亦包含形成N型非晶矽層在該穿隧介電層在該第一光接收表面上的部分上，及形成P型非晶矽層在該穿隧介電層在該第二光接收表面上的部分上。方法亦包含退火該N型非晶矽層及該P型非晶矽層以分別形成N型多晶矽層及P型多晶矽層。方法亦包含形成透明導電氧化層在該N型多晶矽層上及在該P型多晶矽層上。方法亦包含形成第一組導電接觸點在該透明導電氧化層在該N型多晶矽層上的部分上，及第二組導電接觸點在該透明導電氧化層在該P型多晶矽層上的部分上。
本發明又提供一種根據上述之方法所製造的太陽能電池。
本發明又提供一種太陽能電池，其包含具有第一光接收表面及第二光接收表面的基板；設置在第一光接收表面及第二光接收表面上的穿隧介電層；設置於穿隧介電層設置於第一光接收表面上的部分上之N型多晶矽層，其中 N型多晶矽層包含晶粒邊界；設置於穿隧介電層設置於第二光接收表面上的部分上之P型多晶矽層，其中P型多晶矽層包含晶粒邊界。設置在N型多晶矽層上及在P型多晶矽層上的透明導電氧化層；設置在透明導電氧化層設置在N型多晶矽層上的部分上的第一組導電接觸；以及設置在透明導電氧化層設置在P型多晶矽層上的部分上的第二組導電接觸。
本發明又提供一種太陽能電池，其包含具有第一光接收表面及第二光接收表面的基板；設置在第一光接收表面及第二光接收表面上的穿隧介電層；設置在穿隧介電層設置在第一光接收表面上的部分上之N型多晶矽層，而對應的N型擴散區域設置在接近N型多晶矽層的基板中；設置在穿隧介電層設置在第二光接收表面上的部分上之P型多晶矽層，而對應的P型擴散區域設置在接近P型多晶矽層的基板中；設置在N型多晶矽層上及在P型多晶矽層上的透明導電氧化層；設置在透明導電氧化層設置在N型多晶矽層上的部分上的第一組導電接觸；設置在透明導電氧化層設置在P型多晶矽層上的部分上的第二組導電接觸。
100:基板
102:第一光接收表面
104:第二光接收表面
106:第一紋理化光接收表面
108:第二紋理化光接收表面
110:穿隧介電層
112:第一矽層
114:第二矽層
116:第一多晶矽層
118:第二多晶矽層
120:透明導電氧化層
122:第一組導電接觸
124:第二組導電接觸
700:流程圖
702、704、706、708、710、712、714:操作
第1圖至第6圖根據本發明之實施例，描繪太陽能電池的製造中各階段的剖面圖，其中：第1圖描繪所提供之基板；第2圖描繪第1圖之光接收表面的紋理化後的結構；第3圖描繪第2圖具有穿隧介電層形成在其上的結構；第4圖描繪第3圖在形成第一矽層及第二矽層後的結構；第5圖描繪第4圖在高溫退火及TCO層的沉積後的結構；以及 第6圖描繪第5圖具有導電接觸形成在其上的結構；第7圖是根據本發明之實施例，列出對應於第1圖至第6圖的太陽能電池的製造之操作方法的流程圖。
以下之詳細描述僅為說明性質，且不意圖限制申請標的實施例或此些實施例之應用及使用。如用於本文中，用字「例示性」表示「用作為範例、例子或說明」。本文中被描述為例示性之任何實施方式不必然被解釋為較佳或優於其他實施方式。另外，不意圖被出現在前述技術領域、先前技術、發明內容或以下實施方式中明示或暗示之理論所侷限。
本說明書包含參照「一個實施例(one embodiment)」或「一實施例(an embodiment)」。「在一個實施例中」及「在一實施例中」之語句的出現不必然表示相同實施例。具體特徵、結構或特性可以與本發明相符之任何適當方式結合。
術語，以下段落提供在本發明中找到之用語的定義及/或語境(包含所附申請專利範圍)：
「包含(Comprising)」，此術語為開放式的。當用於所附之申請專利範圍時，此用語不排除其他結構或步驟。
「配置以」，各種單元或組件可描述或主張為「配置以」執行一或多個工作。在這樣的內文中，使用「配置以」以藉由指出單元/組件包含在操作期間執行那些一或多個工作的結構而暗示結構。因此，即使當特定單元/組件不是目前正在運作的(例如，不是開啟/活動的)，單元/組件也可說是被配置以進 行工作。描述單元/電路/組件被「配置以」執行一或多個工作是明確地對於所述單元/組件，不意圖援引35 U.S.C.§112，第六段。
「第一(First)」、「第二(Second)」等，如在本文中使用時，這些用語係用作為其所前綴之名詞的標示，而不意味著任何形式的排序(例如，空間、時間、邏輯等)。舉例來說，參照「第一」太陽能電池不必然意味著此太陽能電池在順序上為第一個太陽能電池；相反地，用語「第一」係用以區分此太陽能電池與另一個太陽能電池(例如，「第二」太陽能電池)。
「耦接(Coupled)」-以下描述表示元件或節點或特徵被「耦接」在一起。如在本文中使用，除非另有明確地指出，否則「耦接」表示一元件/節點/特徵係直接地或間接地連接至(或直接地或間接地相通於)另一元件/節點/特徵，而不必然為機械上的。
此外，一些用語也可僅為了參考之目的而使用在以下描述中，並且因此不意圖為限制。例如，用語如「上部(upper)」、「下部(lower)」、「上方(above)」及「下方(below)」表示進行參照之圖式中的方向。用語如「前(front)」、「後(back)」、「背(rear)」、「側(side)」、「外側(outboard)」及「內側(inboard)」藉由參照討論中描述組件之內文及相關圖式，描述於變得明確之參照的一致但任意框架中的組件之部分的方向及/或位置。這樣的用語可包含上面具體地提到的文字、其衍生詞及類似含意的文字。
「抑制(Inhibit)」-如本文所使用的，抑制被用來描述減少或最小化影響。當組件或特徵被描述來抑制動作、運動或狀況時，其可完全避免其結果或成果或未來的狀態。另外，「抑制」也可表示否則可能另外發生的結果、 性能及/或影響的減少或減輕。因此，當組件、元件或特徵被表示來抑制結果或狀態時，其不需完全避免或消除該結果或狀態。
利用改良之前接觸式異質接面製程來製造太陽能電池的方法、及其所得之太陽能電池將在本文中被描述。在以下敘述中，描述了許多具體細節，像是具體操作流程，以提供本發明實施例之透徹的理解。對於所屬技術領域中具有通常知識者將顯而易見的是，本揭露實施例可在無需此些具體細節下執行。於其他例子中，習知之製造技術，像是微影及圖樣化技術不詳細描述以免不必要地模糊本揭露實施例。另外，將理解的是，圖式中所示之各種實施例為說明性地表示，且不必然按比例繪製。
本文揭露太陽能電池的製造方法。在一個實施例中，太陽能電池的製造方法涉及提供具有第一及第二光接收表面的基板。方法也涉及紋理化第一及第二光接收表面的其中之一或兩者。方法也涉及形成穿隧介電層在第一及第二光接收表面上。方法也涉及形成N型非晶矽層在穿隧介電層在第一光接收表面上的部分上，以及形成P型非晶矽層在穿隧介電層在第二光接收表面上的部分上。方法也涉及退火N型非晶矽層及P型非晶矽層以分別形成N型多晶矽層及P型多晶矽層。方法也涉及形成透明導電氧化層在N型多晶矽層上及在P型多晶矽層上。方法也涉及形成第一組導電接觸在部分N型多晶矽層上之透明導電氧化層上，以及第二組導電接觸在部分P型多晶矽層上之透明導電氧化層上。
本文亦揭露太陽能電池。在一實施例中，太陽能電池包含具有第一及第二光接收表面的基板。穿隧介電層設置於第一及第二光接收表面上。N型多晶矽層設置於設置於第一光接收表面上之穿隧介電層的部分上。N型多晶矽層具有晶粒邊界。P型多晶矽層設置於設置於第二光接收表面上之穿隧介電層的部 分上。P型多晶矽層具有晶粒邊界。透明導電氧化層設置在N型多晶矽層上及在P型多晶矽層上。第一組導電接觸設置在設置在N型多晶矽層上之透明導電氧化層的部分上。第二組導電接觸設置在設置在P型多晶矽層上之透明導電氧化層的部分上。
在另一實施例中，太陽能電池包含具有第一及第二光接收表面的基板。穿隧介電層設置於第一及第二光接收表面上。N型多晶矽層設置於設置於第一光接收表面上之穿隧介電層的部分上。對應的N型擴散區域設置在基板中，並接近N型多晶矽層。P型多晶矽層設置於設置於第二光接收表面上之穿隧介電層的部分上。對應的P型擴散區域設置在基板中，並接近P型多晶矽層。透明導電氧化層設置在N型多晶矽層上及在P型多晶矽層上。第一組導電接觸設置在設置在N型多晶矽層上之透明導電氧化層的部分上。第二組導電接觸設置在設置在P型多晶矽層上之透明導電氧化層的部分上。
本文所描述的實施例針對改良之前接觸式異質接面製程。目前最佳技術的方法係使用表面(apparent)熱氧化物，接續為非晶或微晶矽沉積及透明導電氧化物(TCO)及銅電鍍方法。下文所描述之實施例移動熱操作的位置於矽沉積製程後，以製造前多晶矽接觸式太陽能電池。
提供背景，目前最佳技術的方法可涉及高品質氧化物的成長及接續非晶矽層沉積。這樣的方法有一些缺點。氧化物是高品質的，但接面是在呈現表面製備臨界的裝置的表面，使得膜無法形成在粒子或汙染區域等上。而且，非晶矽膜吸收大量的光。第三，其沒有可轉化將可能被限制在中低量值(modest values)之生命週期的磷摻雜的高溫處理。目前最佳技術的方法可藉由沉積矽薄膜為將緩解透明度問題的微晶而被非常好的改進，但其他則否。吸氣的不足可藉 由使用高品質較高成本的矽而被緩解。接面在表面的問題將必須另外藉由非常好的工廠及工具的清潔來處理。
相較之下，依據一或多個在本文描述的實施例，前接觸式製程涉及雙面紋路晶片的形成。低溫氧化，例如不論是濕化學或電漿氧化，及隨後在相對的表面上的摻雜的矽薄膜的沉積係接續高溫處理。則，在一實施例中，退火處理是在穿隧介電質及矽沉積之後執行。高溫處理可為快速熱退火或爐退火。在一個實施例中，製程空間是高於大約攝氏900度。這樣的處理可被實施來打破一些穿隧介電質及實現吸氣金屬進高度摻雜的多晶矽材料的最大效益。製程可藉由形成TCO層然後例如藉由銅電鍍來形成接觸而完成。
在一實施例中，在本文描述的方法的優點可包含能夠達成更高的效率的能力及使用較低純度的及，因此，較低成本的矽的能力。在結晶作用後的較好的矽薄膜的透明度是另一潛在的優點。可啟用熱擴散接面進底層基板以在晶片表面去除冶金接面。所描述的方法可被實施以減少沒有鈍化膜的未摻雜的表面的勢能。吸氣入摻雜的多晶矽以改進生命週期的金屬可為另一優點。
在例示性製程流程中，第1圖至第6圖係為根據本發明之實施例，描繪太陽能電池的製造中各階段的剖面圖。第7圖是根據本發明之實施例，對應於第1圖至第6圖，列出太陽能電池的製造之操作方法的流程圖700。
參考流程圖700的操作702及對應的第1圖，製造太陽能電池的方法涉及提供基板100。在一實施例中，基板100為N型單晶矽基板。在一實施例中，基板100具有第一光接收表面102及第二光接收表面104。
現在參考流程圖700的操作704及對應至第2圖，第一光接收表面102及第二光接收表面104的其中之一或兩者被紋理化以分別提供第一紋理化光 接收表面106及第二紋理化光接收表面108(兩者在第2圖中示出被紋理化)。在一實施例中，氫氧系濕蝕刻劑被用來紋理化基板100的第一光接收表面102及第二光接收表面104。
現在參考流程圖700的操作706及對應至第3圖，穿隧介電層110形成在第一紋理化光接收表面106及第二紋理化光接收表面108上。在一實施例中，穿隧介電層110為濕化學氧化矽層，例如，由第一紋理化光接收表面106及第二紋理化光接收表面108的矽的濕化學氧化來形成。在另一實施例中，穿隧介電層110為沉積的氧化矽層，例如，由在第一紋理化光接收表面106上及在第二紋理化光接收表面108上的化學氣相沉積來形成。在另一實施例中，穿隧介電層110為熱氧化矽層，例如，由第一紋理化光接收表面106及第二紋理化光接收表面108的矽的熱氧化來形成。在其他實施例中，穿隧介電層為氮摻雜SiO2層或其他介電材料如氮化矽層。
現在參考流程圖700的操作708及對應至第4圖，第一導電型的第一矽層112形成在形成在第一紋理化光接收表面106上的穿隧介電層110的部分上。第二導電型的第二矽層114形成在形成在第二紋理化光接收表面108上的穿隧介電層110的部分上。在一實施例中，第一矽層112為N型非晶矽層，而第二矽層114為P型非晶矽層。在一實施例中，第一矽層112及第二矽層114藉由化學氣相沉積來形成。
現在參考流程圖700的操作710及對應至第5圖，高溫退火製程被用以結晶第一矽層112及第二矽層114以分別形成第一多晶矽層116及第二多晶矽層118。在一實施例中，第一多晶矽層116為N型多晶矽層，而第二多晶矽層118為P型多晶矽層。在一個這樣的實施例中，晶粒邊界形成在N型多晶矽層中及在P 型多晶矽層中。在一實施例中，高溫退火在高於攝氏900度之溫度下執行。在一實施例中，高溫退火製程驅動摻質在退火製程期間從第一矽層112/第一多晶矽層116及第二矽層114/第二多晶矽層118部分進入基板100。在一個這樣的實施例中，P型擴散區域形成在基板100接近P型多晶矽層的部分中，而N型擴散區域形成在基板100接近N型多晶矽層的部分中。
現在參考流程圖700的操作712及再次對應至第5圖，透明導電氧化(TCO)層120形成在第一多晶矽層116上及在第二多晶矽層118上。在一實施例中，TCO層120為氧化銦錫(ITO)層。
現在參考流程圖700的操作714及對應至第6圖，第一組導電接觸122形成在形成在第一多晶矽層116上的TCO層的部分上。第二組導電接觸124形成在形成在第二多晶矽層118上的TCO層的部分上。在一實施例中，第一組導電接觸122及第二組導電接觸124係藉由先形成金屬晶種層然後電鍍金屬來形成，如在金屬晶種層上形成的膜片(mask)中的銅。在另一實施例中，第一組導電接觸122及第二組導電接觸124是藉由印刷漿料製程(printed paste process)來形成，如印刷銀漿料製程。第6圖之所得到的結構可被視為完成的或幾乎完成的太陽能電池，其可包含在太陽能模組中。
整體而言，雖然某些材料在前面被具體地描述，但一些材料可輕易的以其他材料取代，且其它這樣的實施例仍在本發明的實施例的精神和範疇之內。舉例來說，在一實施例中，不同的基板材料最後提供作為太陽能電池基板。在一個這樣的實施例中，III-V族材料基板最後提供作為太陽能電池基板。此外，應當理解的是，其中N+及P+型摻雜被具體地描述，其他實施例可預期的分別包含相對的導電型，例如，P+及N+型摻雜。
因此，利用改良之前接觸式異質接面製程來製造太陽能電池的方法、及其所得之太陽能電池已被描述。
雖然已在前描述了具體的實施例，然而即使相對於特定的特徵僅描述單一實施例，這些實施例並不意圖限制本揭露的範疇。除非另有說明，否則在本發明中所提供的特徵之示例是意圖為說明性的而非限制性的。前面的描述是意在涵蓋具有本發明的利益的此類替代物、修改物及等效物，其對所屬技術領域中具有通常知識者而言係為顯而易見。
本發明的範疇包含在本文中所揭露的任何特徵或特徵的組合(明顯地或隱含地)，或者其任何概括，而不論其是否減輕了本文中所解決的任何問題或所有問題。因此，在本申請(或主張其優先權的申請)的審查期間，可制定新的申請專利範圍成任何這樣的特徵組合。特別是，參照所附的申請專利範圍，來自附屬項的特徵可與獨立項的特徵組合，而來自各獨立項的特徵可以任何適當的方式組合，且不僅為所附的申請專利範圍中所列舉的特定組合。
700:流程圖
702、704、706、708、710、712、714:操作

Claims (20)

  1. 一種製造太陽能電池的方法，該方法包含：提供具有一第一光接收表面及一第二光接收表面的一基板；紋理化該第一光接收表面及該第二光接收表面的其中之一或兩者；形成一穿隧介電層而使該穿隧介電層之一部分位在該第一光接收表面及一部分位在該第二光接收表面上；形成一N型非晶矽層在該穿隧介電層位在該第一光接收表面上的該部分上，及形成一P型非晶矽層在該穿隧介電層位在該第二光接收表面上的該部分上；退火該N型非晶矽層及該P型非晶矽層以分別形成一N型多晶矽層及一P型多晶矽層，其中退火製程係驅動摻質在退火製程期間從該N型多晶矽層及該P型多晶矽層部分進入該基板，使對應形成的一N型擴散區域及一P型擴散區係設置於該基板中而分別鄰近於該N型非晶矽層及該P型非晶矽層；形成一透明導電氧化層而使該透明導電氧化層之一部分位在該N型多晶矽層上及一部分位在該P型多晶矽層上；以及形成一第一組導電接觸在該透明導電氧化層位在該N型多晶矽層上的該部分上，及形成一第二組導電接觸在該透明導電氧化層位在該P型多晶矽層上的該部分上。
  2. 如申請專利範圍第1項所述之方法，其中退火該N型非晶矽層及該P型非晶矽層包含加熱該基板至高於大約攝氏900度 之溫度。
  3. 如申請專利範圍第1項所述之方法，其中退火該N型非晶矽層及該P型非晶矽層包含形成晶粒邊界在所得到的該N型多晶矽層及該P型多晶矽層中。
  4. 如申請專利範圍第1項所述之方法，其中形成該穿隧介電層包含執行該第一光接收表面及該第二光接收表面的濕化學氧化。
  5. 如申請專利範圍第1項所述之方法，其中形成該穿隧介電層包含藉由化學氣相沉積來沉積一氧化矽層。
  6. 如申請專利範圍第1項所述之方法，其中紋理化該第一光接收表面及該第二光接收表面的其中之一或兩者包含僅紋理化該第一光接收表面及該第二光接收表面的其中之一。
  7. 如申請專利範圍第1項所述之方法，其中紋理化該第一光接收表面及該第二光接收表面的其中之一或兩者包含紋理化該第一光接收表面及該第二光接收表面。
  8. 如申請專利範圍第1項所述之方法，其中形成該透明導電氧化層包含形成一氧化銦錫(ITO)層。
  9. 如申請專利範圍第1項所述之方法，其中形成該N型非晶矽層包含藉由化學氣相沉積形成該N型非晶矽層，而其中形成該P型非晶矽層包含藉由化學氣相沉積形成該P型非晶矽層。
  10. 一種太陽能電池，其包含：一基板，係具有一第一光接收表面及一第二光接收表面； 一穿隧介電層，該穿隧介電層之一部分係設置在該第一光接收表面及一部分係設置在該第二光接收表面上；一N型多晶矽層，係設置於該穿隧介電層設置於該第一光接收表面上的該部分上；一P型多晶矽層，係設置於該穿隧介電層設置於該第二光接收表面上的該部分上；一透明導電氧化層，該透明導電氧化層之一部分係設置在該N型多晶矽層上及一部分係設置在該P型多晶矽層上；一第一組導電接觸，係設置在該透明導電氧化層設置在該N型多晶矽層上的該部分上；以及一第二組導電接觸，係設置在該透明導電氧化層設置在該P型多晶矽層上的該部分上；其中摻質在退火製程期間係從該N型多晶矽層及該P型多晶矽層部分進入該基板，使對應形成的一N型擴散區域及一P型擴散區係設置於該基板中而分別鄰近於該N型非晶矽層及該P型非晶矽層。
  11. 如申請專利範圍第10項所述之太陽能電池，其中該N型多晶矽層包含晶粒邊界，且其中該P型多晶矽層包含晶粒邊界。
  12. 如申請專利範圍第10項所述之太陽能電池，其中該第一光接收表面及該第二光接收表面的其中之一或兩者被紋理化。
  13. 如申請專利範圍第10項所述之太陽能電池，其中該透明導電氧化層為一氧化銦錫(ITO)層。
  14. 如申請專利範圍第10項所述之太陽能電池，其中該基板為 一單晶矽基板，而其中該穿隧介電層為一氧化矽層。
  15. 如申請專利範圍第10項所述之太陽能電池，其中該第一組導電接觸及該第二組導電接觸包含一金屬晶種層。
  16. 一種太陽能電池，其包含：一基板，係具有一第一光接收表面及一第二光接收表面；一穿隧介電層，該穿隧介電層之一部分係設置在該第一光接收表面及一部分係設置在該第二光接收表面上；一N型多晶矽層，係設置在該穿隧介電層設置在該第一光接收表面上的該部分上；一P型多晶矽層，係設置在該穿隧介電層設置在該第二光接收表面上的該部分上；一透明導電氧化層，該透明導電氧化層之一部分係設置在該N型多晶矽層上及一部分係設置在該P型多晶矽層上；一第一組導電接觸，係設置在該透明導電氧化層設置在該N型多晶矽層上的該部分上；以及一第二組導電接觸，係設置在該透明導電氧化層設置在該P型多晶矽層上的該部分上；其中摻質在退火製程期間係從該N型多晶矽層及該P型多晶矽層部分進入該基板，使對應形成的一N型擴散區域及一P型擴散區係設置於該基板中而分別鄰近於該N型非晶矽層及該P型非晶矽層。
  17. 如申請專利範圍第16項所述之太陽能電池，其中該N型多晶矽層包含晶粒邊界，且其中該P型多晶矽層包含晶粒邊界。
  18. 如申請專利範圍第16項所述之太陽能電池，其中該第一光接收表面及該第二光接收表面的其中之一或兩者被紋理化。
  19. 如申請專利範圍第16項所述之太陽能電池，其中該透明導電氧化層為一氧化銦錫(ITO)層。
  20. 如申請專利範圍第16項所述之太陽能電池，其中該基板為一單晶矽基板，而其中該穿隧介電層為一氧化矽層。
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US20160072000A1 (en) 2016-03-10
AU2021202377A1 (en) 2021-05-13
DE112015004071T5 (de) 2017-05-18
CN106575678A (zh) 2017-04-19
TW201624742A (zh) 2016-07-01
WO2016036668A1 (en) 2016-03-10
KR20170048515A (ko) 2017-05-08

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