CN112701170A - 改善的前触点异质结工艺 - Google Patents

改善的前触点异质结工艺 Download PDF

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CN112701170A
CN112701170A CN202011577374.1A CN202011577374A CN112701170A CN 112701170 A CN112701170 A CN 112701170A CN 202011577374 A CN202011577374 A CN 202011577374A CN 112701170 A CN112701170 A CN 112701170A
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大卫·D·史密斯
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SOLAR ENERGY Co
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Abstract

本发明描述了使用改善的前触点异质结工艺制造太阳能电池的方法，以及所得太阳能电池。在示例中，太阳能电池包括具有第一光接收表面和第二光接收表面的基板。隧道介电层设置在所述第一光接收表面和所述第二光接收表面上。N型多晶硅层设置在设置于所述第一光接收表面上的所述隧道介电层的部分上。P型多晶硅层设置在设置于所述第二光接收表面上的所述隧道介电层的部分上。透明的导电氧化物层设置在所述N型多晶硅层上以及所述P型多晶硅层上。第一组导电触点设置在设置于所述N型多晶硅层上的所述透明的导电氧化物层的部分上。第二组导电触点设置在设置于所述P型多晶硅层上的所述透明的导电氧化物层的部分上。

Description

改善的前触点异质结工艺
本申请是基于申请日为2015年8月31日、申请号为201580042607.9、发明创造名称为“改善的前触点异质结工艺”的中国专利申请的分案申请。
相关申请的交叉引用
本申请要求于2014年9月5日提交的美国临时申请No.62/046,717的权益，该临时申请的全部内容据此以引用方式并入本文。
技术领域
本公开的实施例属于可再生能源领域，并且具体地讲，涉及使用改善的前触点异质结工艺制造太阳能电池的方法，以及所得太阳能电池。
背景技术
光伏电池(常被称为太阳能电池)是熟知的用于将太阳辐射直接转换为电能的装置。一般来讲，使用半导体加工技术在基板的表面附近形成p-n结，从而在半导体晶片或基板上制造太阳能电池。照射在基板表面上并进入基板内的太阳辐射在基板块体中形成电子和空穴对。电子和空穴对迁移至基板中的p掺杂区域和n掺杂区域，从而在掺杂区域之间产生电压差。将掺杂区连接至太阳能电池上的导电区，以将电流从电池引导至与其耦接的外部电路。
效率是太阳能电池的重要特性，因其直接与太阳能电池发电能力有关。同样，制备太阳能电池的效率直接与此类太阳能电池的成本效益有关。因此，提高太阳能电池效率的技术或提高制造太阳能电池效率的技术是普遍所需的。本公开的一些实施例允许通过提供制造太阳能电池结构的新工艺而提高太阳能电池的制造效率。本公开的一些实施例允许通过提供新型太阳能电池结构来提高太阳能电池效率。
附图说明
图1至图6示出了根据本公开实施例的太阳能电池制造中的各个阶段的剖视图，其中：
图1示出提供的基板；
图2示出在光接收表面纹理化之后图1的结构；
图3示出其上形成有隧道介电层的图2的结构；
图4示出第一硅层和第二硅层形成之后图3的结构；
图5示出TCO层高温退火并沉积之后图4的结构；以及
图6示出其上形成有导电触点的图5的结构。
图7为根据本公开的实施例的流程图，该流程图列出与图1至图6相对应的太阳能电池的制造方法中的操作。
具体实施方式
以下具体实施方式本质上只是例证性的，并非意图限制所述主题的实施例或此类实施例的应用和用途。如本文所用，词语“示例性”意指“用作实例、例子或举例说明”。本文描述为示例性的任何实施未必理解为相比其他实施优选的或有利的。此外，并不意图受前述技术领域、背景技术、发明内容或以下具体实施方式中提出的任何明示或暗示的理论的约束。
本说明书包括提及“一个实施例”或“实施例”。短语“在一个实施例中”或“在实施例中”的出现不一定是指同一实施例。特定的特征、结构或特性可以任何与本公开一致的合适方式加以组合。
术语。以下段落提供存在于本公开(包括所附权利要求书)中的术语的定义和/或语境：
“包括”。该术语是开放式的。如在所附权利要求书中所用，该术语并不排除其他结构或步骤。
“被构造成”。各个单元或部件可被描述或声明成“被构造成”执行一项或多项任务。在这样的语境下，“被构造成”用于通过指示该单元/部件包括在操作期间执行一项或多项那些任务的结构而暗示结构。因此，即使当指定的单元/部件目前不在操作(例如，未开启/激活)时，也可将该单元/部件说成是被构造成执行任务。详述某一单元/电路/部件“被构造成”执行一项或多项任务明确地意在对该单元/部件而言不援用35U.S.C.§112第六段。
“第一”、“第二”等。如本文所用的这些术语用作其之后的名词的标记，而并不暗示任何类型的顺序(例如，空间、时间和逻辑等)。例如，提及“第一”太阳能电池并不一定暗示该太阳能电池为某一序列中的第一个太阳能电池；相反，术语“第一”用于区分该太阳能电池与另一个太阳能电池(例如，“第二”太阳能电池)。
“耦接”-以下描述是指元件或节点或结构特征被“耦接”在一起。如本文所用，除非另外明确指明，否则“耦接”意指一个元件/节点/特征直接或间接连接至另一个元件/节点/特征(或直接或间接与其连通)，并且不一定是机械连接。
此外，以下描述中还仅为了参考的目的使用了某些术语，因此这些术语并非意图进行限制。例如，诸如“上部”、“下部”、“上方”或“下方”之类的术语是指附图中提供参考的方向。诸如“正面”、“背面”、“后面”、“侧面”、“外侧”和“内侧”之类的术语描述部件的某些部分在一致但任意的参照系内的取向和/或位置，通过参考描述所讨论的部件的文字和相关的附图可以清楚地了解所述取向和/或位置。这样的术语可包括上面具体提及的词语、它们的衍生词语以及类似意义的词语。
“阻止”-如本文所用，阻止用于描述减小影响或使影响降至最低。当组件或特征被描述为阻止行为、运动或条件时，它可以完全防止某种结果或后果或未来的状态。另外，“阻止”还可以指减少或减小可能会发生的某种后果、表现和/或效应。因此，当组件、元件或特征被称为阻止结果或状态时，它不一定完全防止或消除该结果或状态。
使用改善的前触点异质结工艺制造太阳能电池的方法，以及所得太阳能电池在本文中有所描述。在下面的描述中，给出了许多具体细节，诸如具体的工艺流程操作，以便提供对本公开的实施例的透彻理解。对本领域的技术人员将显而易见的是，可在没有这些具体细节的情况下实施本公开的实施例。在其他情况中，没有详细地描述熟知的制造技术，诸如平版印刷和图案化技术，以避免不必要地使本公开的实施例难以理解。此外，应当理解在图中示出的多种实施例是示例性的展示并且未必按比例绘制。
本文公开了制造太阳能电池的方法。在一个实施例中，制造太阳能电池的方法涉及提供具有第一光接收表面和第二光接收表面的基板。该方法还涉及纹理化第一光接收表面和第二光接收表面中的一者或两者。该方法还涉及在第一光接收表面和第二光接收表面上形成隧道介电层。该方法还涉及在第一光接收表面上的隧道介电层的部分上形成N型非晶硅层，以及在第二光接收表面上的隧道介电层的部分上形成P型非晶硅层。该方法还涉及使N型非晶硅层和P型非晶硅层退火以分别形成N型多晶硅层和P型多晶硅层。该方法还涉及在N型多晶硅层上和P型多晶硅层上形成透明的导电氧化物层。该方法还涉及在N型多晶硅层上的透明的导电氧化物层的部分上形成第一组导电触点，以及在P型多晶硅层上的透明的导电氧化物层的部分上形成第二组导电触点。
本文还公开了太阳能电池。在实施例中，太阳能电池包括具有第一光接收表面和第二光接收表面的基板。隧道介电层设置在第一光接收表面和第二光接收表面上。N型多晶硅层设置在设置于第一光接收表面上的隧道介电层的部分上。N型多晶硅层具有晶界。P型多晶硅层设置在设置于第二光接收表面上的隧道介电层的部分上。P型多晶硅层具有晶界。透明的导电氧化物层设置在N型多晶硅层上以及P型多晶硅层上。第一组导电触点设置在设置于N型多晶硅层上的透明的导电氧化物层的部分上。第二组导电触点设置在设置于P型多晶硅层上的透明的导电氧化物层的部分上。
在另一个实施例中，太阳能电池包括具有第一光接收表面和第二光接收表面的基板。隧道介电层设置在第一光接收表面和第二光接收表面上。N型多晶硅层设置在设置于第一光接收表面上的隧道介电层的部分上。相应的N型扩散区设置在基板中靠近N型多晶硅层。P型多晶硅层设置在设置于第二光接收表面上的隧道介电层的部分上。相应的P型扩散区设置在基板中靠近P型多晶硅层。透明的导电氧化物层设置在N型多晶硅层上以及P型多晶硅层上。第一组导电触点设置在设置于N型多晶硅层上的透明的导电氧化物层的部分上。第二组导电触点设置在设置于P型多晶硅层上的透明的导电氧化物层的部分上。
本文所述的实施例涉及改善的前触点异质结工艺。现有技术方法目前使用表观热氧化物，然后是非晶或微晶硅沉积以及透明的导电氧化物(TCO)和镀铜方法。下述实施例将热操作的位置移动到硅沉积工艺之后，以便制造前多晶硅触点太阳能电池。
为了提供上下文，现有技术方法可涉及高质量氧化物的生长以及随后的非晶硅层沉积。这样的方法存在若干缺点。氧化物是高质量的，但是结在装置的表面处，这使得表面处理成为关键，使得膜不形成在颗粒或污染区域等上。另外，非晶硅膜吸收大量的光。第三，不存在用磷掺杂的高温处理，这可转化为可能限于适度值的寿命。通过沉积作为微晶的硅膜可以很好地改善现有技术的方法，这将缓解透明度问题，但是不会缓解任何其他问题。通过使用高质量的更高成本的硅可以缓解吸杂的缺乏。否则，在表面处的结的问题必须通过工厂和工具的非常好的清洁来处理。
相比之下，根据本文所述的一个或多个实施例，前触点工艺涉及双面纹理化晶片的形成。低温氧化(例如湿化学氧化或等离子体氧化)，以及随后在相对表面上沉积掺杂的硅膜之后是进行高温处理。在实施例中，然后，在隧道介电和硅沉积之后执行退火。高温处理可为快速热退火或炉退火。在一个实施例中，处理空间高于约900摄氏度。可实施这样的处理以稍微打破隧道介电并且实现来自将金属吸杂到高度掺杂的多晶硅材料中的最大益处。该工艺可通过形成TCO层，然后例如通过镀铜形成触点来完成。
在实施例中，本文所述的方法的优点可包括使得实现更高效率的能力以及使用更低纯度以及因此更低成本的硅的能力成为可能。结晶后的硅膜的更大透明度是另一个潜在的优点。可使得将结热扩散到下面的基板中以去除在晶片表面处的冶金结成为可能。可实施所描述的方法以使没有钝化膜的未掺杂表面的可能性最小化。将金属吸杂到掺杂多晶硅中以改善寿命可为另一个优点。
在示例性工艺流程中，图1至图6示出了根据本公开的实施例的太阳能电池制造中的各个阶段的剖视图。图7为根据本公开的实施例的流程图700，该流程图列出与图1至图6相对应的太阳能电池的制造方法中的操作。
参见流程图700的操作702和对应的图1，制造太阳能电池的方法涉及提供基板100。在实施例中，基板100为N型单晶硅基板。在实施例中，基板100具有第一光接收表面102和第二光接收表面104。
现在参见流程图700的操作704和对应的图2，光接收表面102和104中的一者或两者被纹理化以分别提供第一纹理化光接收表面106和第二纹理化光接收表面108(两者在图2中均示为纹理化的)。在实施例中，采用基于氢氧化物的湿法蚀刻剂来使基板100的光接收表面102和104纹理化。
现在参见流程图700的操作706和对应的图3，隧道介电层110形成在第一纹理化光接收表面106和第二纹理化光接收表面108上。在实施例中，隧道介电层110是湿化学氧化硅层，例如，由第一纹理化光接收表面106和第二纹理化光接收表面108的硅的湿化学氧化形成。在另一个实施例中，隧道介电层110是沉积氧化硅层，例如，由第一纹理化光接收表面106上和第二纹理化光接收表面108上的化学气相沉积形成。在另一个实施例中，隧道介电层110是热氧化硅层，例如，由第一纹理化光接收表面106和第二纹理化光接收表面108的硅的热氧化形成。在其他实施例中，隧道介电层是氮掺杂的SiO2层或其他介电材料诸如氮化硅层。
现在参见流程图700的操作708和对应的图4，第一导电类型的第一硅层112在形成在第一纹理化光接收表面106上的隧道介电层110的部分上形成。第二导电类型的第二硅层114在形成在第二纹理化光接收表面108上的隧道介电层110的部分上形成。在实施例中，第一硅层112是N型非晶硅层，并且第二硅层114是P型非晶硅层。在实施例中，第一硅层112和第二硅层114通过化学气相沉积形成。
现在参见流程图700的操作710和对应的图5，使用高温退火工艺来使第一硅层112和第二硅层114结晶以分别形成第一多晶硅层116和第二多晶硅层118。在实施例中，第一多晶硅层116是N型多晶硅层，并且第二多晶硅层118是P型多晶硅层。在一个这样的实施例中，晶界形成于N型多晶硅层中以及P型多晶硅层中。在实施例中，在高于900摄氏度的温度下执行高温退火。在实施例中，高温退火工艺在退火工艺期间将来自硅层112/116和114/118的掺杂剂部分地驱入基板100中。在一个这样的实施例中，P型扩散区在靠近P型多晶硅层的基板100的部分中形成，而N型扩散区在靠近N型多晶硅层的基板100的部分中形成。
现在参见流程图700的操作712和对应的图5，透明的导电氧化物(TCO)层120形成在第一多晶硅层116上以及第二多晶硅层118上。在实施例中，TCO层120是氧化铟锡(ITO)层。
现在参见流程图700的操作714和对应的图6，第一组导电触点122在形成在第一多晶硅层116上的TCO层的部分上形成。第二组导电触点124在形成在第二多晶硅层118的TCO层的部分上形成。在实施例中，第一组导电触点122和第二组导电触点124通过以下方式而形成：首先形成金属晶种层，然后在形成在金属晶种层上的掩模中电镀金属诸如铜。在另一个实施例中，第一组导电触点122和第二组导电触点124通过印刷糊剂工艺(诸如印刷银糊工艺)形成。图6的所得结构可被视为完成的或几乎完成的太阳能电池，其可包括在太阳能模块中。
总之，虽然上文具体描述了某些材料，但对于仍然在本发明实施例的实质和范围内的其他此类实施例，一些材料可易于被其他材料取代。例如，在实施例中，不同基板材料最终提供太阳能电池基板。在一个这样的实施例中，III-V族材料基板最终提供太阳能电池基板。此外，应当理解，在具体描述N+型和P+型掺杂的情况下，设想的其他实施例包括相反的导电类型，分别为例如P+型和N+型掺杂。
因此，已经公开了使用改善的前触点异质结工艺制造太阳能电池的方法，以及所得太阳能电池。
尽管上面已经描述了具体实施例，但即使相对于特定的特征仅描述了单个实施例，这些实施例也并非旨在限制本公开的范围。在本公开中所提供的特征的例子旨在为说明性的而非限制性的，除非另有说明。以上描述旨在涵盖将对本领域的技术人员显而易见的具有本公开的有益效果的那些替代形式、修改形式和等效形式。
本公开的范围包括本文所(明示或暗示)公开的任何特征或特征组合，或其任何概括，不管其是否减轻本文所解决的任何或全部问题。因此，可以在本申请(或对其要求优先权的申请)的审查过程期间对任何此类特征组合提出新的权利要求。具体地讲，参考所附权利要求书，来自从属权利要求的特征可与独立权利要求的那些特征相结合，来自相应的独立权利要求的特征可以按任何适当的方式组合，而并非只是以所附权利要求中枚举的特定形式组合。
在实施例中，制造太阳能电池的方法涉及提供具有第一光接收表面和第二光接收表面的基板。该方法还涉及纹理化第一光接收表面和第二光接收表面中的一者或两者。该方法还涉及在第一光接收表面和第二光接收表面上形成隧道介电层。该方法还涉及在第一光接收表面上的隧道介电层的部分上形成N型非晶硅层，以及在第二光接收表面上的隧道介电层的部分上形成P型非晶硅层。该方法还涉及使N型非晶硅层和P型非晶硅层退火以分别形成N型多晶硅层和P型多晶硅层。该方法还涉及在N型多晶硅层上和P型多晶硅层上形成透明的导电氧化物层。该方法还涉及在N型多晶硅层上的透明的导电氧化物层的部分上形成第一组导电触点，以及在P型多晶硅层上的透明的导电氧化物层的部分上形成第二组导电触点。
在一个实施例中，使N型非晶硅层和P型非晶硅层退火包括将基板加热到高于约900摄氏度的温度。
在一个实施例中，使N型非晶硅层和P型非晶硅层退火包括在所得N型多晶硅层和P型多晶硅层中形成晶界。
在一个实施例中，形成隧道介电层包括执行第一光接收表面和第二光接收表面的湿化学氧化。
在一个实施例中，形成隧道介电层包括通过化学气相沉积来沉积氧化硅层。
在一个实施例中，使N型非晶硅层和P型非晶硅层退火包括在靠近所得P型多晶硅层的基板中形成P型扩散区，并且包括在靠近所得N型多晶硅层的基板中形成N型扩散区。
在一个实施例中，纹理化第一光接收表面和第二光接收表面中的一者或两者包括纹理化第一光接收表面和第二光接收表面中的仅一者。
在一个实施例中，纹理化第一光接收表面和第二光接收表面中的一者或两者包括纹理化第一光接收表面和第二光接收表面两者。
在一个实施例中，形成透明的导电氧化物层包括形成氧化铟锡(ITO)层。
在一个实施例中，形成N型非晶硅层包括通过化学气相沉积形成N型非晶硅层，并且形成P型非晶硅层包括通过化学气相沉积形成P型非晶硅层。
在实施例中，太阳能电池包括具有第一光接收表面和第二光接收表面的基板。隧道介电层设置在第一光接收表面和第二光接收表面上。N型多晶硅层设置在设置于第一光接收表面上的隧道介电层的部分上。N型多晶硅层具有晶界。P型多晶硅层设置在设置于第二光接收表面上的隧道介电层的部分上。P型多晶硅层具有晶界。透明的导电氧化物层设置在N型多晶硅层上以及P型多晶硅层上。第一组导电触点设置在设置于N型多晶硅层上的透明的导电氧化物层的部分上。第二组导电触点设置在设置于P型多晶硅层上的透明的导电氧化物层的部分上。
在一个实施例中，第一光接收表面和第二光接收表面中的一者或两者被纹理化。
在一个实施例中，透明的导电氧化物层是氧化铟锡(ITO)的层。
在一个实施例中，基板是单晶硅基板，并且隧道介电层是氧化硅层。
在实施例中，太阳能电池包括具有第一光接收表面和第二光接收表面的基板。隧道介电层设置在第一光接收表面和第二光接收表面上。N型多晶硅层设置在设置于第一光接收表面上的隧道介电层的部分上。相应的N型扩散区设置在基板中靠近N型多晶硅层。P型多晶硅层设置在设置于第二光接收表面上的隧道介电层的部分上。相应的P型扩散区设置在基板中靠近P型多晶硅层。透明的导电氧化物层设置在N型多晶硅层上以及P型多晶硅层上。第一组导电触点设置在设置于N型多晶硅层上的透明的导电氧化物层的部分上。第二组导电触点设置在设置于P型多晶硅层上的透明的导电氧化物层的部分上。
在一个实施例中，N型多晶硅层包括晶界，并且P型多晶硅层包括晶界。
在一个实施例中，第一光接收表面和第二光接收表面中的一者或两者被纹理化。
在一个实施例中，透明的导电氧化物层是氧化铟锡(ITO)的层。
在一个实施例中，基板是单晶硅基板，并且隧道介电层是氧化硅层。

Claims (15)

1.一种太阳能电池，包括：
半导体基板，所述半导体基板具有第一光接收表面和第二光接收表面；
隧道介电层，所述隧道介电层具有设置在所述第一光接收表面上的部分，并且具有设置在所述第二光接收表面上的部分；
设置在所述隧道介电层的设置于所述第一光接收表面上的部分上的N型多晶硅层、以及设置在所述半导体基板中靠近所述N型多晶硅层的相应N型扩散区；
设置在所述隧道介电层的设置于所述第二光接收表面上的部分上的P型多晶硅层、以及设置在所述半导体基板中靠近所述P型多晶硅层的相应P型扩散区；
透明的导电氧化物层，所述透明的导电氧化物层具有设置在所述N型多晶硅层上的部分和设置在所述P型多晶硅层上的部分；
设置在所述透明的导电氧化物层的设置于所述N型多晶硅层上的部分上的第一组导电触点；以及
设置在所述透明的导电氧化物层的设置于所述P型多晶硅层上的部分上的第二组导电触点，
其中对应的第一组导电触点和第二组导电触点中的每一个具有底面，整个所述底面仅与所述透明的导电氧化物层直接物理接触，而不与对应的N型多晶硅层或P型多晶硅层直接物理接触，并且不与所述半导体基板直接物理接触。
2.根据权利要求1所述的太阳能电池，其中所述N型多晶硅层包括晶界，并且其中所述P型多晶硅层包括晶界。
3.根据权利要求1所述的太阳能电池，其中所述第一光接收表面和所述第二光接收表面中的一者或两者被纹理化。
4.根据权利要求1所述的太阳能电池，其中所述透明的导电氧化物层是氧化铟锡(ITO)层。
5.根据权利要求1所述的太阳能电池，其中所述半导体基板是单晶硅基板，并且其中所述隧道介电层是氧化硅层。
6.一种太阳能电池，包括：
半导体基板，所述半导体基板具有第一光接收表面和第二光接收表面；
隧道介电层，所述隧道介电层具有设置在所述第一光接收表面上的部分，并且具有设置在所述第二光接收表面上的部分；
设置在所述隧道介电层的设置于所述第一光接收表面上的部分上的N型多晶硅层、以及设置在所述半导体基板中靠近所述N型多晶硅层的相应N型扩散区；
设置在所述隧道介电层的设置于所述第二光接收表面上的部分上的P型多晶硅层；
透明的导电氧化物层，所述透明的导电氧化物层具有设置在所述N型多晶硅层上的部分和设置在所述P型多晶硅层上的部分；
设置在所述透明的导电氧化物层的设置于所述N型多晶硅层上的部分上的第一组导电触点；以及
设置在所述透明的导电氧化物层的设置于所述P型多晶硅层上的部分上的第二组导电触点，
其中对应的第一组导电触点和第二组导电触点中的每一个具有底面，整个所述底面仅与所述透明的导电氧化物层直接物理接触，而不与对应的N型多晶硅层或P型多晶硅层直接物理接触，并且不与所述半导体基板直接物理接触。
7.根据权利要求6所述的太阳能电池，其中所述N型多晶硅层包括晶界，并且其中所述P型多晶硅层包括晶界。
8.根据权利要求6所述的太阳能电池，其中所述第一光接收表面和所述第二光接收表面中的一者或两者被纹理化。
9.根据权利要求6所述的太阳能电池，其中所述透明的导电氧化物层是氧化铟锡(ITO)层。
10.根据权利要求6所述的太阳能电池，其中所述半导体基板是单晶硅基板，并且其中所述隧道介电层是氧化硅层。
11.一种太阳能电池，包括：
半导体基板，所述半导体基板具有第一光接收表面和第二光接收表面；
隧道介电层，所述隧道介电层具有设置在所述第一光接收表面上的部分，并且具有设置在所述第二光接收表面上的部分；
设置在所述隧道介电层的设置于所述第一光接收表面上的部分上的N型多晶硅层；
设置在所述隧道介电层的设置于所述第二光接收表面上的部分上的P型多晶硅层、以及设置在所述半导体基板中靠近所述P型多晶硅层的相应P型扩散区；
透明的导电氧化物层，所述透明的导电氧化物层具有设置在所述N型多晶硅层上的部分和设置在所述P型多晶硅层上的部分；
设置在所述透明的导电氧化物层的设置于所述N型多晶硅层上的部分上的第一组导电触点；以及
设置在所述透明的导电氧化物层的设置于所述P型多晶硅层上的部分上的第二组导电触点，
其中对应的第一组导电触点和第二组导电触点中的每一个具有底面，整个所述底面仅与所述透明的导电氧化物层直接物理接触，而不与对应的N型多晶硅层或P型多晶硅层直接物理接触，并且不与所述半导体基板直接物理接触。
12.根据权利要求11所述的太阳能电池，其中所述N型多晶硅层包括晶界，并且其中所述P型多晶硅层包括晶界。
13.根据权利要求11所述的太阳能电池，其中所述第一光接收表面和所述第二光接收表面中的一者或两者被纹理化。
14.根据权利要求11所述的太阳能电池，其中所述透明的导电氧化物层是氧化铟锡(ITO)层。
15.根据权利要求11所述的太阳能电池，其中所述半导体基板是单晶硅基板，并且其中所述隧道介电层是氧化硅层。
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