TW201251054A - Solar cell and method to manufacture the same - Google Patents

Abstract

A solar cell is provided, and includes a substrate, a plurality of first electrodes, at least one P-type semiconductor, at least one N-type semiconductor, at least one dielectric member, an intrinsic layer and a second electrode. The first electrodes are spaced apart from each other and deposited on the substrate. The P-type semiconductor and the N-type semiconductor are respectively deposited on at least one of the first electrodes. The dielectric member is deposited on the substrate, and spaced the P-type semiconductor and the N-type semiconductor apart from each other. The intrinsic layer is deposited on the P-type semiconductor, the N-type semiconductor and the dielectric member, and the second electrode is deposited on the intrinsic layer. A method to manufacture abovementioned solar cell is also provided to make the P-type semiconductor, the N-type semiconductor, the dielectric member and the intrinsic layer deposited according to abovementioned configuration.

Description

201251054 VI. Description of the Invention: [Technical Field to Be Invented by the Invention] The present invention relates to a sun at φ,

The manufacturing method, the Japanese battery (solarcell) and its features are related to a P-type semiconductor and N-energy battery and its manufacturing method. The sun that meets the requirements of type 4 [Prior Art] ^The current living environment of the public, due to the development of the industry, the global energy is being consumed eagerly. With the investigation reports of many scholars, people are gradually beginning to realize that they are in the critical era of severe energy shortages, and they are fully recoverable and produce energy. According to the United States, non-scientific energy sources such as oil, natural gas and coal will be depleted in 41, 67 and 192 years respectively. Under such circumstances, the development of regenerative source technologies such as solar energy, wind power, geothermal energy, and bioenergy is bound to receive more and more attention. Among the many renewable energy technologies, solar energy has been favored by countries all over the world due to its ability to emit light, process without/loss, and no need to maintain cost. This has driven the solar cell market to flourish in recent years. Under this premise, the issue of solar energy development has gradually received attention, which has driven many countries to start implementing

New energy policies and implementation of subsidy incentives to actively develop and promote solar cells. X According to the results of the sf., the results show that the sun is about 5.4x10 joules per young shot, and the annual energy required by the world is about UxlO joules; therefore, as long as humans can make full use of it from 201205154 Sun radiates to one-five thousandth of the earth's energy, and many of the energy problems that humanity is currently facing can be solved immediately. In view of this, it is necessary to actively develop solar cells in order to solve the energy problem. Further discussion, the current types of solar cells can be roughly divided into: (1) Mono/Polycrystalline Solar Cell; (2) Amorphous/Microcrystalline Thin Film Solar Cells (Amorphous/ Thin Film Solar Cell; (3) Inorganic Solar Cell; (4) Organic Solar Cell; and (5) Dye-Sensitized Solar Cell (DSC). Among them, since the Swiss scientist Gratzel proposed its DSSC structural components and working principle in 1991, many experts have successively proposed a variety of titanium dioxide (Ti02) films, particles, and nanotubes. Among them, the above-mentioned (1) (2) can be generally classified as a Shih-ki solar cell, which is also a main subject of the present invention; therefore, the solar cell described below in this document exclusively refers to a ruthenium-based solar cell.

I For most of the current solar cells, most of them need to be installed in a fixture. In practice, the fixture may be the top or side wall of the building or the base or bracket of the solar powered system. In order to save the volume occupied by the shipment, and to make it easier to dream about the object of the divination, it is generally desirable that the solar cell be able to be thinner and lighter, that is, the solar cell can be made thinner. Based on the above-mentioned knowledge, 'in current solar cells, 'there are generally P-type semiconductor layers, intrinsic layers and N-type semiconductor layers' and P-type semiconductor layers, intrinsic layers and N-type semiconductor layers. The system is vertically stacked into a ρθΙΝ stack structure to form a photoelectric conversion layer. However, since the 'P-type semiconductor layer, the intrinsic layer, and the N-type semiconductor layer are in accordance with the 201251054' in the pIN stack structure, the thickness of the light-converting layer may not be thinned. The solar cells that can be transported in this way will result in a significant increase in the cost of warehousing and shipping (4) labor costs and the cost of assembly during assembly. SUMMARY OF THE INVENTION The technical problems and objects to be solved by the present invention are as follows: the layer and the order of the ρ·-type semi-conductive layer, the essence of the reason, resulting in the deuteration of the solar cell, the main type of the present invention: The body-positive battery and the manufacturing method thereof, the p-energy battery=degree conductor laterally spaced configuration 'to reduce the sun, the technical means for solving the problem of the invention: paragraph pass i ί明ί fί technical hand used by the technical hand The d-energy battery includes a substrate, a plurality of H-dipoles, a semiconductor, at least an -N-type semiconductor, two intrinsic layers, and a second electrode. The above complex and n-type are on the substrate. At least a plurality of p-type semiconductors are stacked on the plurality of first electrode type semiconductors and N, respectively, and laterally separating p from the intrinsic layer. N f semiconductor system is used in the first electrode 6 201251054. In a preferred embodiment of the present invention, Eight materials including the oxidized stone eve, the nitrite and the oxynitride 电 电 电 电 电 可 至少 至少 至少 至少 至少 。 。 雷 。 。 。 。 。 。 。 。. The first sun-light conductive oxide. Above the second electrode. Further, the layer is laminated on a glass or a transparent resin. The material of the substrate and the protective layer can be covered by the technical problem of the method. The manufacturing method of the W battery is reversed and the first electric circuit is formed in the first base and the plurality of electrodes. For the formation of at least one p-type 舻=type II semi-conducting body, and in the p-type semiconductor and (2) element, thereby separating the p-type semiconducting == conductor. After taking the 'P-type semiconductor, N-type input S ϊ ϊ ϊ an essential layer; and forming a -7" electrode on the intrinsic layer. Preferably, the technical hand used to continue to provide the protection segment on the second electrode is the same as that of the other solar cell = and a -electrode is formed on the substrate. Then, an intrinsic layer is formed on the electrode, and the P-type 5 small P-type semiconductor and at least one type of semiconductor are opened on the intrinsic layer, and the 一'-N-type semiconductor phase gate 13J ^ 1 semiconductor system and the upper eight C 'The p-type semiconductor and the μ semiconductor form a second electrode, thereby forming a plurality of second bodies S between: a type t conductor and a semiconductor: a dielectric: semiconductor. Preferably, a protective layer is provided on the electrode and the dielectric element. As apparent from the above description, in the manufacturing method of the Y / according to the present invention, the solar power is arranged in a laterally spaced relationship. 7 510 电极 电极 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 The P-type semiconductor and the N-type semiconductor are laterally spaced apart from each other between the first electrode (or the second electrode) and the intrinsic layer; therefore, the solar cell fabricated by the present invention can be made lighter and thinner than conventional solar cells. To achieve the requirements of thinning. Obviously, by the technical means provided by the invention, the fabricated solar cell can be more easily shipped and assembled, thereby greatly reducing the space cost in storage and shipment, and saving the assembly cost required for assembly. The specific embodiments used will be further illustrated by the following examples and drawings. [Embodiment] The method for manufacturing a solar cell provided by the present invention can be widely applied to the production of a plurality of solar cells, and the combined embodiments thereof are numerous, so it is not repeated here--only two of them are listed. The preferred embodiment will be specifically described. Referring to FIGS. 1A to 1F, there are shown a series of manufacturing method diagrams of a solar cell according to a first embodiment of the present invention. The first A is shown in the first embodiment of the present invention, first providing a substrate, and sequentially stacking a first electrode layer and a germanium-based semiconductor layer on the substrate; the first B-picture shows the first electrode The layer is patterned with the germanium-based semiconductor layer to form a plurality of first electrodes and a plurality of germanium-based semiconductors; the first C-picture shows a doping process for the plurality of germanium-based semiconductors, thereby making the plurality of germanium-based semiconductors respectively 201251054 Converting into at least one P-type semiconductor and at least one N-type semiconductor; the first D-picture shows a dielectric layer formed on the p-type semiconductor, the >-type semiconductor and the substrate; the first E-picture shows the dielectric layer a planarization process 'to expose the P-type semiconductor and the N-type semiconductor, and to convert the dielectric layer into at least one dielectric element for separating the P-type semiconductor from the N-type semiconductor; the first F-picture is shown in the p-type semiconductor An intrinsic layer, a second electrode and a protective layer are sequentially stacked on the N-type semiconductor and the dielectric element. As shown in Fig. 1A, in the first embodiment of the present invention, a substrate 11 is provided, and the material of the substrate 11 may be glass, transparent resin or other suitable transparent material. The above transparent resin may be polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) 'polyether (polyethersulfone) , PES), polyimide (PI). Then, a first electrode layer 12 may be stacked on the substrate 11. The material of the first electrode layer 12 may be a transparent conductive oxide, and the transparent conductive oxide may be indium tin oxide (IT0), oxidized in A1 doped ZnO (AZO), indium zinc oxide ( Indium zinc oxide, IZO) or other transparent conductive materials. In addition, the first electrode layer 12 may be formed by sputtering, chemical vapor deposition (CVD) or evaporation. Then, the first electrode layer 12 may continue to be formed on the first electrode layer 12. A germanium-based semiconductor layer 13 is formed. The material of the bismuth-based semiconductor layer 13 may be amorphous germanium or microcrystalline germanium. Meanwhile, the method of forming the germanium-based semiconductor layer 13 may be a chemical vapor deposition method. As shown in FIG. 1A and FIG. B, after the formation of the sulfhydryl semiconducting layer 9 201251054 body layer 13, the chemical engraving (including electrochemical etching), optical etching, optical cutting, or a combination thereof may be used. An electrode layer 12 is patterned with the bismuth-based semiconductor layer 13 to convert the first electrode layer 12 and the bismuth-based semiconductor layer 13 into a plurality of first electrodes (only four first electrodes 121, 122 are indicated in FIG. 123盥12 and a plurality of Moon-based semiconductors (only the four-base semiconductors 13b, 132, 133, and 134 are labeled in the first B-picture), wherein the germanium-based semiconductors 131, 132, 133, and 134 are stacked on the first electrode, respectively. Bu 122, 123 and 124. As shown in Fig. 1 and Fig. C, the following can be done by ^^^(3) and (9) to make a replacement process, so that Shi Xiji Semiconductor 13 Bu 132, 133 and 134 respectively Converting into at least one p-type semiconductor and at least one N-type semiconductor. In the first B-picture, the first c^-based semiconductors 131 and 133 are respectively converted into two p-semiconductors 131P and 133P; the germanium-based semiconductors 132 and 134 are transformed Two N-type semiconductors 132N and 134N, wherein p = 31P and 1 doped The material may be selected from the group of elements, the group of group IIIA halogens in the monthly table, such as boron (B) 'aluminum (A1), gallium indium (In) or tantalum (T1); N-type semiconductor 1321^ and 134N The middle material may be a group miscellaneous selected from the VA group elements in the element table

= = (Ρ), arsenic (As), antimony (Sb) or antimony (Bi). Preferably, the p-type conductor 131P and the germanium semiconductor 132N are separated from each other and the semiconductor 132N and the P-type semiconductor 1331 are separated from each other. The semiconductor i33P and the N-type semiconductor (3) are separated and matched with each other, such as the first D. As shown in the figure, after the doping process, = conductors 131P and 133P, N-type semiconductors (10) and U4N form a dielectric layer 14 on the second layer 11, and the material of the dielectric layer 14 may include tantalum oxide and tantalum nitride. And at least one of bismuth oxynitride. As shown in Fig. D and Fig. E, in the formation of dielectric layer η 201251054 semiconductor 131P ^ Π 3 into the planarization process, so that the Ρ type exposed, if祛: 1 / 1 and Ν type semiconductor 132 Ν and 134 卜 卜: and convert the "electric layer 14 into at least one dielectric element (the first ε ^ is labeled as three dielectric elements (4), 142 phantom 43 brothers). 1 I village can be processed by mechanical grinding (including chemically assisted mechanical grinding) or chemical etching. Between the dielectric-type semiconductors 132N formed by the second process and the type semiconductor 133P and between the P-type semi-conductors | 2 3; the second type, the body 134N, thereby separating

Semiconductor 132N, P-type semiconductor (10) and N = - F, as shown in 'forming dielectric elements i4i, M2 and 141, after '', further in P-type semiconductor 131P, dielectric-in-type semiconductor I32N, dielectric Element 142, p-type semiconductor binary: !5=434, _4Ν 上 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造 造The layers (10) and, the burdock body layers i32N and 134N and the intrinsic chip 15 will enter the solar cell; the intrinsic layer 15 as the light-generating electron-electricity guide 16 material may be a transparent conductive oxide, and 201251054 The method of sputtering, crystallization and Luo a can be made by honesty or steaming. Protective layer 17 of 2, transparent resin or other suitable transparent material. It can be invented, and the manufacturing method is the same as the battery 1, and the solar cell 1 includes a plurality of first electrodes (i.e., the four conductors shown in the first F-figure, 124). At least - Ρ type semi-Ν type i, conductor conductor (such as two dielectric elements 14 shown in Figure - F) 42 and (4)), - Ben shell 15, a second electrode 16 and a protection Layer 17. The two electrodes 121, 122, 123 and 124 are connected to each other. The semiconductor 1311> and the 133P system are respectively suitable; the first electrode 121 and the i23; the N-type semiconductors 132N and 134N are stacked respectively. An electrode 122 and 124. The dielectric elements 141, 142 and 143 are disposed on the substrate η and are respectively located between the p-type semiconductor 131p and the N-type semiconductor 132N, between the N-type semiconductor 132N and the P-type semiconductor 133P, and P. The P-type semiconductor 131P, the N-type semiconductor 132N, the P-type semiconductor 133P, and the N-type semiconductor 134N are separated between the type semiconductor 133P and the N-type semiconductor 134N. The intrinsic layer 15 is stacked on the p-type semiconductor π 1P, the dielectric element 141, On the N-type semiconductor 132N, the dielectric element 142, the P-type semiconductor 133P, the dielectric element 143, and the N-type semiconductor 134N, the second electrode 16 is stacked on the intrinsic layer 15, and the protective layer π is stacked on the second electrode 16. Since the materials of the respective constituent elements have been disclosed in the above-described manufacturing method in the solar cell 1, they will not be described below. 12 201251054 In addition to the manufacturing method disclosed above, the present invention provides another (1⁄4 A method for manufacturing a battery. Please refer to the second to second G drawings, which are schematic views showing a series of manufacturing methods of another solar cell according to a second embodiment of the present invention. In the second embodiment of the present invention, a substrate is first provided, and a first electrode, an intrinsic layer and a germanium-based semiconductor layer are sequentially stacked on the substrate; and the second B-picture shows that the germanium-based semiconductor layer is patterned. By forming a plurality of germanium-based semiconductors; the second C-picture shows a doping process for a plurality of germanium-based semiconductors, whereby a plurality of germanium-based semiconductors are respectively converted into at least one p-plastic semiconductor and at least one N-type semiconductor, first D The figure shows that a plurality of second electrodes are formed on the p-variable semiconductor and the n-type semiconductor; the second E-picture shows a dielectric layer formed on the second electrode and the intrinsic layer; and the second F-picture shows the dielectric layer a planarization process for exposing the second electrode and converting the dielectric layer into at least one dielectric component for separating the P plastic semiconductor from the N-type semiconductor; the second G pattern is shown on the second electrode and the dielectric component Pile up As shown in FIG. 2A, in the second embodiment of the present invention, a substrate 21 is provided first, and the material of the substrate 21 may be glass, transparent resin or other suitable transparent material. Polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyethersulfone (PES), poly Polyimide (PI). Next, a first electrode 22 may be stacked on the substrate 21, an intrinsic layer 23 may be stacked on the first electrode 22, and a germanium-based semiconductor layer 24 may be stacked on the intrinsic layer 23. The material of the first electrode 22 may be a transparent conductive oxide which may be indium tin oxide, aluminum zinc oxide, indium zinc oxide or other transparent conductive material. Method of Forming First Electrode 22 13 201251054 may be a sputtering method, a chemical vapor deposition method, or an evaporation method. The material of the intrinsic layer 23 may be amorphous or microcrystalline; and the formation of the intrinsic layer 23 may be a chemical vapor deposition method. Meanwhile, the formation method of the Shi Xiji semiconductor layer 24 may also be a chemical vapor deposition method. As shown in FIG. 2B, after the germanium-based semiconductor layer 24 is formed, the germanium-based semiconductor layer 24 can be patterned by chemical etching (including electrochemical etching), optical etching, optical cutting, or a combination thereof. The Shi Xiji semiconductor layer 24 is transformed into a plurality of Shih-ki semiconductors (only four Shih-kiu semiconductors 241, 242, 243 and 244 are indicated in the second B-picture). As shown in FIG. 2B and FIG. 2C, a doping process can be performed on the Shih-Xi semiconductors 241, 242, 243, and 244 to convert the Shih-Xi semiconductors 241, 242, 243, and 244 into at least A p-type semiconductor and at least one N-type semiconductor. In the second and second c-pictures, the germanium-based semiconductors 241 and 243 are converted into two p-type semiconductors 241P and 243P, respectively; and the germanium-based semiconductors 242 and 244 are converted into two N-type semiconductors 242N and 244N, respectively. The material doped in the P-type semiconductors 241P and 243P may be selected from the group consisting of Group IIIA elements of the periodic table, such as boron (B), aluminum (A1), gallium (Ga), and indium (In). Or 铊(ΤΙ); the material doped in the N-type semiconductors 242N and 244N may be selected from the group consisting of VA elements in the periodic table, such as phosphorus (P), arsenic (As), antimony (Sb) or铋 (Bi). Preferably, the P-type semiconductor 241P and the N-type semiconductor 242N are spaced apart from each other and matched; the N-type semiconductor 242N and the P-type semiconductor 243P are separated from each other; and the P-type semiconductor 243P and the N-type semiconductor 244N are spaced apart from each other and matched. As shown in FIG. 2D, after forming the p-type semiconductors 241P and 243P and the n-type semiconductors 242N and 244N, a second electrode ' can be formed on the P-type semiconductors 241P and 243P and the N-type semiconductors 242N and 244N, respectively. A plurality of the above-mentioned second electric 201251054 poles. In the second D diagram, four second electrodes 25a, 25b, 25c and 25d are formed. Further, the second electrodes 25a, 25b, 25c, and 25d are stacked on the P-type semiconductor 241P, the N-type semiconductor 242N, the P-type semiconductor 243P, and the N-type semiconductor 244N, respectively. Further, the material of the second electrodes 25a, 25b, 25c and 25d may be a transparent conductive oxide, and the transparent conductive oxide may be indium tin oxide, aluminum zinc oxide, indium zinc oxide or other transparent conductive material. As shown in FIG. E, after forming the second electrodes 25a, 25b, 25c and 25d, a dielectric layer 26 may be formed on the second electrodes 25a, 25b, 25c and 25d and the intrinsic layer 23, and dielectrically The material of layer 26 can include at least one of cerium oxide, cerium nitride, and cerium oxynitride. As shown in the second E and second F, after the dielectric layer 26 is formed, a planarization process can be performed on the dielectric layer 26, so that the second electrodes 25a, 25b, 25c, and 25d are exposed, and the second electrodes 25a, 25b, 25c, and 25d are exposed. The electrical layer 26 is transformed into at least one dielectric component (the ones indicated in the second F diagram are three dielectric components 261, 262 and 263). Among them, the above flattening process can be carried out by mechanical polishing (including chemical assisted mechanical polishing) or chemical etching. As can be seen from the second F diagram, the dielectric elements 261, 262, and 263 formed through the above process are disposed on the intrinsic layer 23, and are respectively located between the P-type semiconductor 241P and the N-type semiconductor 242N, and the N-type semiconductors 242N and P. Between the type semiconductors 243P and between the P-type semiconductor 243P and the N-type semiconductor 244N, the P-type semiconductor 241P, the N-type semiconductor 242N, the P-type semiconductor 243P, and the N-type semiconductor 244N are separated. As shown in the second G diagram, after forming the dielectric elements 261, 262, and 263, the second electrode 25a, the dielectric element 261, the 15th 201251054 second electrode 25b, the dielectric element 262 263, and the second electrode 25d may continue. A pole 25c, a dielectric element, and a solar cell 2 are formed. Protect the shore 27 layers 27 to produce fat or other suitable transparent material. The material can be glass, transparent tree idiots' can be understood in comparison with the two § hai disclosed in the present invention, although the protective layer 27 of -t ^ It : Γ ^ ^ is the same, the solar cell battery 2 The material of the substrate 21 of the battery 2 and the sun are the inverted structure of the solar cell 1, and the battery of the b battery 2 is the first thunder to two # 'where the 'the solar cell 1 is the first: 123 and 124 are equivalent to the solar power diode, 25d, the pole 16 of the solar cell 1 corresponds to the first electrode 22 of the solar cell 2. Generally, the two 'phases' are in the technical field, and are easy to understand. Compared with the conventional solar cells, the solar cell provided by Hi or the type II semiconductor is in the first electric field. If (as in the second embodiment) is disposed laterally separated from the intrinsic layer, the solar cell 1 or 2 of the solar cell produced by the present invention can be made thinner and thinner, thereby achieving thinning (°, and Conveniently, by the technical means provided by the present invention, the fabricated solar cell i or 2 is easier to ship and assemble, and the space cost for storage and shipment is greatly reduced, and the assembly cost of the flower basket is required. It can be seen from the above embodiments of the present invention that the present invention has the value of the industry and the use of the present invention. However, the above embodiments are merely illustrative of the preferred embodiment of the present invention, and are generally used in the technical field. Knowledge 16 201251054 [Simplified description of the drawings] 1_ shows that in the first embodiment of the present invention, a substrate is first provided, and a 4-first-electrode layer of a semiconductor layer is sequentially stacked on the substrate; 〃 1 _ show will - the electrode layer (four)-based semiconductor layer is applied to form a plurality of first-electrode and complex-numbered patterns. 4 does not perform a hybrid process for a plurality of germanium-based semiconductors, whereby a plurality of fragment-based semiconductors are respectively converted into at least one P-type semiconductor and at least An N-type semiconductor; D-picture is shown in the end of the p-rent * Π + conductor, N-type semiconductor and substrate open > into a dielectric layer; E-picture shows a planarization process on the dielectric layer, so that The conductor and the N-type semiconductor are exposed, and the dielectric layer is turned into a >, a dielectric element for separating the P-type semiconductor from the N-type semiconductor; F=displayed in the P-type semiconductor and the N-type semiconductor and the dielectric II The intrinsic layer, the second electrode and the -protective layer are sequentially stacked on the first layer; the second and the second layer are shown in the second embodiment of the present invention, and are sequentially stacked on the substrate. a prismatic layer and a Shi Xiji semiconductor layer; the polarbook B shows that the germanium-based semiconductor layer is patterned into a plurality of germanium-based semiconductors; '9 . 7 ' C ' shows multiple pairs of Shi Xiji Semiconductors doping The complex eclipse semiconductor is respectively converted into a P-type semiconductor and at least one N-type semiconductor; the D-picture is shown in a plurality of second electrodes of the p-type semiconductor and the n-type semiconductor; the 'E-picture is displayed on the second electrode and the f-layer Forming a via layer on the upper surface; F-picture showing a planarization process on the dielectric layer, thereby exposing the second electrode, and converting the dielectric layer into at least one dielectric element for separating the P-type semiconductor from the N-type semiconductor and , the first picture system: protective layer. Displayed on the second electrode and the dielectric element. [Main component symbol description] 1 11 12 121 , 122 , 123 , 124 Solar cell substrate First electrode layer First electrode 18 201251054 13 131 , 132 , 133 , 134

131P, 133P

132N, 134N 14 141, 142, 143 15 16 17 2 21 22 23 24 241 , 242 , 243 , 244

241P ' 243P

242N ' 244N 25a, 25b, 25c, 25d 26 261 , 262 , 263 27 矽 based semiconductor layer 矽 based semiconductor P type semiconductor N type semiconductor dielectric layer dielectric element intrinsic layer second electrode protective layer solar cell substrate first electrode essence Layer germanium semiconductor layer germanium-based semiconductor P-type semiconductor N-type semiconductor second electrode dielectric layer dielectric element protective layer 19

Claims (1)

201251054 VII. Patent application scope 1. A solar cell comprising: a substrate; a plurality of first electrodes are disposed on the substrate on each other. The trp type semiconductor is stacked on at least the first electrode a two N-type semiconductor stacked on at least the = electrodes of the first electrodes and matched with the germanium semiconductor; the semiconductor 14' is disposed on the substrate and located at the germanium type and the germanium type Between the semiconductors, the germanium-type semiconductor stack semiconductor, the germanium semiconductor and the second electrode are stacked on the intrinsic layer. A solar cell according to the first aspect of the invention, wherein the material of the dielectric element of the first embodiment includes oxygen oxidizing and oxidizing the nitrogen. 20 201251054 5. The solar cell of claim 1, wherein The material of the substrate includes a glass or a transparent resin. The solar cell of claim 1, further comprising a protective layer, and the protective layer is stacked on the second electrode. The solar cell according to Item 6, wherein the material of the protective layer comprises glass or a transparent resin. 8. A method for manufacturing a solar cell, comprising the steps of: (8) providing a substrate; and (b) forming a plurality on the substrate. a first electrode interposed therebetween; (c) forming at least one P-type semiconductor and at least one N-type semiconductor on the first electrodes; (d) forming at least one between the P-type semiconductor and the N-type semiconductor a dielectric element for separating the P-type semiconductor from the N-type semiconductor; (e) forming an intrinsic layer on the P-type semiconductor, the N-type semiconductor and the dielectric element; and (f) in the essence Forming a second electrode thereon. 9. The method for manufacturing a solar cell according to claim 8, 21 201251054, after the step (f), further comprising - the step (8), and the step _ Providing a protective layer. 10. A method of manufacturing a solar cell, comprising the steps of: (a) providing a substrate; (b) forming a first electrode on the substrate; (c) forming on the first electrode An intrinsic layer; (d) forming at least one p-type semiconductor and at least one n-type semiconductor on the intrinsic layer, and the P-type semiconductor is interposed between the N-type semiconductor; (e) the P-type semiconductor and the N-type Forming a second electrode ' on the semiconductor to form a plurality of the second electrodes; and (f) forming at least one dielectric element between the P-type semiconductor and the N-type semiconductor to separate the P-type semiconductor from The N-type semiconductor. The method for manufacturing a solar cell according to claim 10, further comprising a step (g) after the step 5 (f), and the step (g) is at the #second electrode Provided with a protective layer on the dielectric element. 22