DE602008002747D1 - Verfahren zur reinigung einer solarzellenoberflächenöffnung mit einer solarätzungspaste - Google Patents

Verfahren zur reinigung einer solarzellenoberflächenöffnung mit einer solarätzungspaste

Info

Publication number
DE602008002747D1
DE602008002747D1 DE602008002747T DE602008002747T DE602008002747D1 DE 602008002747 D1 DE602008002747 D1 DE 602008002747D1 DE 602008002747 T DE602008002747 T DE 602008002747T DE 602008002747 T DE602008002747 T DE 602008002747T DE 602008002747 D1 DE602008002747 D1 DE 602008002747D1
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DE
Germany
Prior art keywords
solar cell
solar
back surface
cleaning
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008002747T
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English (en)
Inventor
Ajeet Rohatgi
Vichai Meemongkolkiat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Georgia Tech Research Institute
Georgia Tech Research Corp
Original Assignee
Georgia Tech Research Institute
Georgia Tech Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39672716&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE602008002747(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Georgia Tech Research Institute, Georgia Tech Research Corp filed Critical Georgia Tech Research Institute
Publication of DE602008002747D1 publication Critical patent/DE602008002747D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning In General (AREA)
  • Materials For Medical Uses (AREA)
DE602008002747T 2007-05-07 2008-05-07 Verfahren zur reinigung einer solarzellenoberflächenöffnung mit einer solarätzungspaste Active DE602008002747D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91632707P 2007-05-07 2007-05-07
PCT/US2008/005869 WO2009008945A2 (en) 2007-05-07 2008-05-07 Method for cleaning a solar cell surface opening made with a solar etch paste

Publications (1)

Publication Number Publication Date
DE602008002747D1 true DE602008002747D1 (de) 2010-11-04

Family

ID=39672716

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602008003218T Active DE602008003218D1 (de) 2007-05-07 2008-05-06 Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche
DE602008002747T Active DE602008002747D1 (de) 2007-05-07 2008-05-07 Verfahren zur reinigung einer solarzellenoberflächenöffnung mit einer solarätzungspaste

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE602008003218T Active DE602008003218D1 (de) 2007-05-07 2008-05-06 Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche

Country Status (11)

Country Link
US (3) US20090025786A1 (de)
EP (2) EP2149155B9 (de)
JP (2) JP2010527146A (de)
CN (2) CN101720512B (de)
AT (2) ATE486370T1 (de)
CA (2) CA2684967C (de)
DE (2) DE602008003218D1 (de)
ES (2) ES2354400T3 (de)
MX (2) MX2009011954A (de)
TW (2) TWI398005B (de)
WO (2) WO2008137174A1 (de)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2009011954A (es) * 2007-05-07 2010-01-29 Georgia Tech Res Inst Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia.
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US7833808B2 (en) * 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US20090260685A1 (en) * 2008-04-17 2009-10-22 Daeyong Lee Solar cell and method of manufacturing the same
TWI390756B (zh) * 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
US20100096011A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. High efficiency interferometric color filters for photovoltaic modules
WO2010044901A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell
WO2010068331A1 (en) 2008-12-10 2010-06-17 Applied Materials, Inc. Enhanced vision system for screen printing pattern alignment
EP2387690A1 (de) 2009-01-13 2011-11-23 Qualcomm Mems Technologies, Inc. Grossflächige leuchtplatte und schirm
GB2467360A (en) * 2009-01-30 2010-08-04 Renewable Energy Corp Asa Contact for a solar cell
GB2467361A (en) * 2009-01-30 2010-08-04 Renewable Energy Corp Asa Contact and interconnect for a solar cell
DE102009003467A1 (de) * 2009-02-11 2010-08-19 Q-Cells Se Rückseitenkontaktierte Solarzelle
DE102009011305A1 (de) * 2009-03-02 2010-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzellen mit Rückseitenkontaktierung sowie Verfahren zu deren Herstellung
TWI382558B (zh) * 2009-03-12 2013-01-11 Gintech Energy Corp 太陽能電池面板的製作方法
CN102414833B (zh) * 2009-04-29 2014-07-09 三菱电机株式会社 太阳能电池单元及其制造方法
TWI504002B (zh) * 2009-06-05 2015-10-11 Semiconductor Energy Lab 光電轉換裝置
KR101194064B1 (ko) * 2009-06-08 2012-10-24 제일모직주식회사 에칭 및 도핑 기능을 가지는 페이스트 조성물
EP3509111B1 (de) * 2009-06-18 2021-03-10 LG Electronics Inc. Solarzelle
US8831014B2 (en) 2009-09-26 2014-09-09 Cisco Technology, Inc. Providing services at a communication network edge
FR2953999B1 (fr) * 2009-12-14 2012-01-20 Total Sa Cellule photovoltaique heterojonction a contact arriere
EP2339648A1 (de) * 2009-12-23 2011-06-29 Applied Materials, Inc. Verbesserte Passivierungsschicht für waferbasierte Solarzellen, Verfahren und System zu deren Herstellung
US20110132444A1 (en) 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
US8241945B2 (en) * 2010-02-08 2012-08-14 Suniva, Inc. Solar cells and methods of fabrication thereof
CN101794833A (zh) * 2010-03-03 2010-08-04 中国科学院电工研究所 一种背表面电介质钝化的太阳电池及其制备方法
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
JP5490231B2 (ja) * 2010-05-20 2014-05-14 京セラ株式会社 太陽電池素子およびその製造方法ならびに太陽電池モジュール
US8071418B2 (en) 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US8110431B2 (en) 2010-06-03 2012-02-07 Suniva, Inc. Ion implanted selective emitter solar cells with in situ surface passivation
US8748310B2 (en) * 2010-06-18 2014-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a metal contact structure of a photovoltaic solar cell
US8105869B1 (en) 2010-07-28 2012-01-31 Boris Gilman Method of manufacturing a silicon-based semiconductor device by essentially electrical means
KR101110826B1 (ko) 2010-08-17 2012-02-24 엘지전자 주식회사 태양전지 패널
US20110139231A1 (en) 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
US10121915B2 (en) * 2010-08-27 2018-11-06 Lg Electronics Inc. Solar cell and manufacturing method thereof
JP5496354B2 (ja) * 2010-10-05 2014-05-21 三菱電機株式会社 光起電力装置およびその製造方法
TWI435454B (zh) 2010-10-25 2014-04-21 Au Optronics Corp 太陽能電池
KR101130196B1 (ko) * 2010-11-11 2012-03-30 엘지전자 주식회사 태양 전지
CN102097154B (zh) * 2010-11-25 2012-07-25 长沙族兴新材料股份有限公司 太阳能电池用背场铝浆
CN102610662A (zh) * 2011-01-25 2012-07-25 东方电气集团(宜兴)迈吉太阳能科技有限公司 单晶硅太阳能电池背面用叠层复合钝化膜
TWI455340B (zh) * 2011-02-25 2014-10-01 Gintech Energy Corp 太陽能電池的製造方法
TWI482294B (zh) * 2011-03-22 2015-04-21 Nat Univ Tsing Hua 製作背面具有介電質層以及分散式接觸電極之矽太陽能電池之方法及該元件
CN102832263B (zh) * 2011-06-15 2015-01-14 茂迪股份有限公司 具有背电场结构的太阳能电池及其制造方法
JP5129369B2 (ja) * 2011-06-20 2013-01-30 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP5275415B2 (ja) * 2011-06-20 2013-08-28 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
DE102011052256B4 (de) * 2011-07-28 2015-04-16 Hanwha Q.CELLS GmbH Verfahren zur Herstellung einer Solarzelle
WO2013062727A1 (en) * 2011-10-24 2013-05-02 Applied Materials, Inc. Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells
KR20130050721A (ko) 2011-11-08 2013-05-16 삼성에스디아이 주식회사 태양 전지
DE102011056087B4 (de) * 2011-12-06 2018-08-30 Solarworld Industries Gmbh Solarzellen-Wafer und Verfahren zum Metallisieren einer Solarzelle
JP5924945B2 (ja) * 2012-01-11 2016-05-25 東洋アルミニウム株式会社 ペースト組成物
JP6214400B2 (ja) * 2012-02-02 2017-10-18 東洋アルミニウム株式会社 ペースト組成物
KR101894585B1 (ko) * 2012-02-13 2018-09-04 엘지전자 주식회사 태양전지
TW201349255A (zh) * 2012-02-24 2013-12-01 Applied Nanotech Holdings Inc 用於太陽能電池之金屬化糊劑
CN102569530B (zh) * 2012-02-24 2015-04-29 上饶光电高科技有限公司 一种晶体硅太阳电池背面钝化介质层局部刻蚀方法
CN104115286A (zh) * 2012-03-06 2014-10-22 应用材料公司 用于背面钝化的图案化的铝背触点
CN103367526B (zh) * 2012-03-29 2018-01-09 无锡尚德太阳能电力有限公司 一种背面局部接触硅太阳电池的制造方法
EP2645427A1 (de) 2012-03-29 2013-10-02 Photovoltech N.V. Erweiterte Laserablation bei der Solarzellenherstellung
WO2013148047A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
US8486747B1 (en) 2012-04-17 2013-07-16 Boris Gilman Backside silicon photovoltaic cell and method of manufacturing thereof
CN102709335B (zh) * 2012-05-08 2014-12-10 常州天合光能有限公司 一种利用SiN薄膜针孔形成局部掺杂或金属化的方法
KR102102873B1 (ko) * 2012-05-21 2020-04-22 뉴사우스 이노베이션즈 피티와이 리미티드 실리콘 태양 전지의 개선된 수소화 공정
US20150214391A1 (en) 2012-07-19 2015-07-30 Hitachi Chemical Company, Ltd. Passivation film, coating material, photovoltaic cell element and semiconductor substrate having passivation film
KR20140022515A (ko) * 2012-08-13 2014-02-25 엘지전자 주식회사 태양 전지
US20140158192A1 (en) * 2012-12-06 2014-06-12 Michael Cudzinovic Seed layer for solar cell conductive contact
KR101925928B1 (ko) * 2013-01-21 2018-12-06 엘지전자 주식회사 태양 전지 및 그의 제조 방법
US20140238478A1 (en) * 2013-02-28 2014-08-28 Suniva, Inc. Back junction solar cell with enhanced emitter layer
CN103346210A (zh) * 2013-06-26 2013-10-09 英利集团有限公司 一种太阳能电池及其制作方法
US8945978B2 (en) * 2013-06-28 2015-02-03 Sunpower Corporation Formation of metal structures in solar cells
CN104464879A (zh) * 2013-09-18 2015-03-25 友晁能源材料股份有限公司 硅晶太阳能电池用的铝浆以及硅晶太阳能电池的制作方法
KR20150035189A (ko) * 2013-09-27 2015-04-06 엘지전자 주식회사 태양 전지
US9525082B2 (en) * 2013-09-27 2016-12-20 Sunpower Corporation Solar cell contact structures formed from metal paste
CN103615887A (zh) * 2013-11-19 2014-03-05 奥特斯维能源（太仓）有限公司 一种太阳能电池烧结炉履带组件
US9362427B2 (en) * 2013-12-20 2016-06-07 Sunpower Corporation Metallization of solar cells
JP6388707B2 (ja) * 2014-04-03 2018-09-12 トリナ ソーラー エナジー デベロップメント ピーティーイー リミテッド ハイブリッド全バックコンタクト太陽電池及びその製造方法
JP6502651B2 (ja) * 2014-11-13 2019-04-17 信越化学工業株式会社 太陽電池の製造方法及び太陽電池モジュールの製造方法
CN104465442B (zh) * 2014-11-28 2017-05-24 厦门讯扬电子科技有限公司 半导体制程中铝硅接面的实时监测方法
CN104882515A (zh) * 2015-05-14 2015-09-02 苏州阿特斯阳光电力科技有限公司 Perc太阳能电池的烧结方法
DE202015103518U1 (de) * 2015-07-03 2015-07-16 Solarworld Innovations Gmbh Solarzelle mit optimierten lokalen Rückkontakten
CN104966761B (zh) * 2015-07-08 2017-04-05 四川银河星源科技有限公司 一种晶体硅太阳能电池的制造方法
CN105428462A (zh) * 2015-12-24 2016-03-23 东方日升新能源股份有限公司 一种太阳能电池片的制备方法
CN105655424A (zh) * 2016-03-31 2016-06-08 江苏顺风光电科技有限公司 全背场扩散n型硅基电池及其制备方法
CN105826405A (zh) * 2016-05-17 2016-08-03 常州天合光能有限公司 一种单晶硅双面太阳电池及其制备方法
CN105845781B (zh) * 2016-05-23 2017-04-05 无锡尚德太阳能电力有限公司 一种去除钝化发射极背面接触太阳能电池皮带印的方法
NL2017290B1 (en) * 2016-08-04 2018-02-14 Stichting Energieonderzoek Centrum Nederland Passivated Emitter and Rear Contact Solar Cell
CN109844959A (zh) 2016-09-29 2019-06-04 京瓷株式会社 太阳能电池元件及太阳能电池元件的制造方法
CN108417474B (zh) * 2018-01-24 2021-12-21 锦州阳光能源有限公司 晶体硅热氧化工艺、系统及晶体硅太阳能电池热氧化工艺
WO2022079887A1 (ja) * 2020-10-16 2022-04-21 株式会社 東芝 多層接合型光電変換素子およびその製造方法
US11961925B2 (en) * 2020-10-30 2024-04-16 Alliance For Sustainable Energy, Llc Engineered nanostructured passivated contacts and method of making the same
CN114517094B (zh) * 2020-11-20 2023-08-22 苏州阿特斯阳光电力科技有限公司 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105471A (en) 1977-06-08 1978-08-08 Arco Solar, Inc. Solar cell with improved printed contact and method of making the same
US4163678A (en) 1978-06-30 1979-08-07 Nasa Solar cell with improved N-region contact and method of forming the same
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
US4442310A (en) 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
US5698451A (en) * 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
EP0374244B1 (de) * 1988-06-10 1994-09-28 Mobil Solar Energy Corporation Verfahren zur herstellung von sonnenzellenkontakten
US5011782A (en) 1989-03-31 1991-04-30 Electric Power Research Institute Method of making passivated antireflective coating for photovoltaic cell
US5223453A (en) * 1991-03-19 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination
US5230746A (en) 1992-03-03 1993-07-27 Amoco Corporation Photovoltaic device having enhanced rear reflecting contact
US5369300A (en) 1993-06-10 1994-11-29 Delco Electronics Corporation Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon
US5468652A (en) * 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
US5510271A (en) 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
EP0729189A1 (de) 1995-02-21 1996-08-28 Interuniversitair Micro-Elektronica Centrum Vzw Herstellungsverfahren von Solarzellen und so hergestellte Produkte
DE19508712C2 (de) 1995-03-10 1997-08-07 Siemens Solar Gmbh Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung
EP0853822A4 (de) 1995-10-05 1999-08-18 Ebara Solar Inc Solarzelle mit einem selbst-justierten und örtlich tief-diffundierten emitter
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
US6091021A (en) 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
JP3722326B2 (ja) * 1996-12-20 2005-11-30 三菱電機株式会社 太陽電池の製造方法
US6207890B1 (en) 1997-03-21 2001-03-27 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JPH10335267A (ja) * 1997-05-30 1998-12-18 Mitsubishi Electric Corp 半導体装置の製造方法
US6121133A (en) 1997-08-22 2000-09-19 Micron Technology, Inc. Isolation using an antireflective coating
US6294459B1 (en) 1998-09-03 2001-09-25 Micron Technology, Inc. Anti-reflective coatings and methods for forming and using same
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
US6291763B1 (en) 1999-04-06 2001-09-18 Fuji Photo Film Co., Ltd. Photoelectric conversion device and photo cell
US6444588B1 (en) 1999-04-26 2002-09-03 Micron Technology, Inc. Anti-reflective coatings and methods regarding same
DE19958878B4 (de) 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
US20050075946A1 (en) * 2000-03-16 2005-04-07 Keith Henning Data accumulation and segmentation system in electronic commerce
EP1365455A4 (de) 2001-01-31 2006-09-20 Shinetsu Handotai Kk Solarzelle und verfahren zu ihrer herstellung
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
EP1378947A1 (de) * 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Ätzpaste für Halbleiter und Verwendung einer Ätzpaste zum lokalisierten Ätzen von Halbleitersubstraten
US7649141B2 (en) 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
US20050189015A1 (en) 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
JP4391808B2 (ja) * 2003-12-01 2009-12-24 シャープ株式会社 太陽電池用シリコンウエハの再生方法、太陽電池セルの形成方法及び太陽電池用シリコンインゴットの作製方法
US7144751B2 (en) 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
EP1730788A1 (de) 2004-02-24 2006-12-13 BP Corporation North America Inc. Prozess zur herstellung photovoltaischer zellen
WO2006003830A1 (ja) * 2004-07-01 2006-01-12 Toyo Aluminium Kabushiki Kaisha ペースト組成物およびそれを用いた太陽電池素子
JP4287473B2 (ja) 2004-07-29 2009-07-01 京セラ株式会社 太陽電池素子の製造方法
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
JP2006261621A (ja) * 2005-02-21 2006-09-28 Osaka Univ 太陽電池およびその製造方法
EP1763086A1 (de) 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Solarzellen mit dickem Siliziumoxid und Siliziumnitrid zur Passivierung und entsprechendes Herstellungsverfahren
US20060231802A1 (en) * 2005-04-14 2006-10-19 Takuya Konno Electroconductive thick film composition, electrode, and solar cell formed therefrom
US7761457B2 (en) * 2005-06-06 2010-07-20 Adobe Systems Incorporated Creation of segmentation definitions
JP2007081059A (ja) * 2005-09-13 2007-03-29 Toyo Aluminium Kk アルミニウムペースト組成物およびそれを用いた太陽電池素子
JP4657068B2 (ja) * 2005-09-22 2011-03-23 シャープ株式会社 裏面接合型太陽電池の製造方法
WO2007055484A1 (en) * 2005-11-08 2007-05-18 Lg Chem, Ltd. Solar cell of high efficiency and process for preparation of the same
AU2006317517A1 (en) 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited High efficiency solar cell fabrication
AU2006317554A1 (en) 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited Low area screen printed metal contact structure and method
JP4425917B2 (ja) 2005-11-28 2010-03-03 三菱電機株式会社 太陽電池セルおよびその製造方法
JP4827550B2 (ja) 2006-02-14 2011-11-30 シャープ株式会社 太陽電池の製造方法
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
NL2000248C2 (nl) 2006-09-25 2008-03-26 Ecn Energieonderzoek Ct Nederl Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering.
MX2009011954A (es) * 2007-05-07 2010-01-29 Georgia Tech Res Inst Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia.

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