WO2010049223A3 - Verfahren, vorrichtung und drucksubstanz zur herstellung einer metallischen kontaktstruktur - Google Patents

Verfahren, vorrichtung und drucksubstanz zur herstellung einer metallischen kontaktstruktur Download PDF

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Publication number
WO2010049223A3
WO2010049223A3 PCT/EP2009/062372 EP2009062372W WO2010049223A3 WO 2010049223 A3 WO2010049223 A3 WO 2010049223A3 EP 2009062372 W EP2009062372 W EP 2009062372W WO 2010049223 A3 WO2010049223 A3 WO 2010049223A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact
layer
particles
printing substance
contact structure
Prior art date
Application number
PCT/EP2009/062372
Other languages
English (en)
French (fr)
Other versions
WO2010049223A2 (de
Inventor
Frank Machalett
Martin Dupke
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP09736393A priority Critical patent/EP2351090A2/de
Publication of WO2010049223A2 publication Critical patent/WO2010049223A2/de
Publication of WO2010049223A3 publication Critical patent/WO2010049223A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Verfahren zur Herstellung einer metallischen Kontaktstruktur, insbesondere der Kontaktstruktur einer Solarzelle, wobei auf eine elektrisch zu kontaktierende, mit einer Dünnschicht geringer Leitfähigkeit, insbesondere einer Passivierungs- oder Antireflexschicht der Solarzelle, versehene Oberfläche eines Substrates lokal gesteuert in einem Non-Impact-Druckverfahren eine Drucksubstanz aufgebracht wird, welche Öffnungs-Partikel mit einer auf die Dicke der Dünnschicht abgestimmten mittleren Korngröße sowie Kontakt-Partikel enthält und auf der Oberfläche eine Kontaktvermittlungsschicht bildet, und danach in einem weiteren Schritt eine Leitschicht auf der Kontaktvermittlungsschicht erzeugt wird, wobei die Öffnungs-Partikel dazu ausgebildet sind, die Dünnschicht geringer Leitfähigkeit in einem nachfolgenden Prozess, insbesondere einem thermischen Prozess, lokal und in definierter Größe zu öffnen, so dass bei diesem oder in einem nachfolgenden Prozess, insbesondere einem thermischen Prozess, die Kontakt-Partikel durch die Öffnungen einen elektrischen Kontakt zwischen Leitschicht und Substrat herstellen.
PCT/EP2009/062372 2008-10-31 2009-09-24 Verfahren, vorrichtung und drucksubstanz zur herstellung einer metallischen kontaktstruktur WO2010049223A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09736393A EP2351090A2 (de) 2008-10-31 2009-09-24 Verfahren, vorrichtung und drucksubstanz zur herstellung einer metallischen kontaktstruktur

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008054166.4 2008-10-31
DE102008054166 2008-10-31
DE102009009840A DE102009009840A1 (de) 2008-10-31 2009-02-20 Verfahren, Vorrichtung und Drucksubstanz zur Herstellung einer metallischen Kontaktstruktur
DE102009009840.2 2009-02-20

Publications (2)

Publication Number Publication Date
WO2010049223A2 WO2010049223A2 (de) 2010-05-06
WO2010049223A3 true WO2010049223A3 (de) 2011-09-09

Family

ID=42114730

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/062372 WO2010049223A2 (de) 2008-10-31 2009-09-24 Verfahren, vorrichtung und drucksubstanz zur herstellung einer metallischen kontaktstruktur

Country Status (3)

Country Link
EP (1) EP2351090A2 (de)
DE (1) DE102009009840A1 (de)
WO (1) WO2010049223A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024307A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer metallischen Kontaktstruktur einer photovoltaischen Solarzelle
US8748310B2 (en) 2010-06-18 2014-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a metal contact structure of a photovoltaic solar cell
DE102011016335B4 (de) * 2011-04-07 2013-10-02 Universität Konstanz Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle
DE102013219846A1 (de) 2013-10-01 2015-04-02 Robert Bosch Gmbh Verfahren und Vorrichtung zum Kontaktieren einer Oberfläche einer Fotovoltaikzelle

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293451A (en) * 1978-06-08 1981-10-06 Bernd Ross Screenable contact structure and method for semiconductor devices
US4388346A (en) * 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
US20060102228A1 (en) * 2004-11-12 2006-05-18 Ferro Corporation Method of making solar cell contacts
US20070148810A1 (en) * 2003-11-18 2007-06-28 Sylke Klein Functional paste
WO2008018265A1 (en) * 2006-08-09 2008-02-14 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell
US20080145633A1 (en) * 2006-06-19 2008-06-19 Cabot Corporation Photovoltaic conductive features and processes for forming same
WO2008078374A1 (ja) * 2006-12-25 2008-07-03 Namics Corporation 太陽電池用導電性ペースト
WO2009059302A1 (en) * 2007-11-02 2009-05-07 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI45202C (fi) 1964-11-20 1972-04-10 Du Pont Läpikuultamaton pigmenttiyhdistelmä.
US4375007A (en) 1980-11-26 1983-02-22 E. I. Du Pont De Nemours & Co. Silicon solar cells with aluminum-magnesium alloy low resistance contacts
ES2270414T3 (es) 1992-03-20 2007-04-01 Shell Solar Gmbh Procedimiento de fabricacion de celulas solares con metalizacion combinada.
DE4311173A1 (de) 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
JP2007194580A (ja) 2005-12-21 2007-08-02 E I Du Pont De Nemours & Co 太陽電池電極用ペースト
US8721931B2 (en) 2005-12-21 2014-05-13 E I Du Pont De Nemours And Company Paste for solar cell electrode, solar cell electrode manufacturing method, and solar cell
DE102006030822A1 (de) 2006-06-30 2008-01-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer metallischen Kontaktstruktur einer Solarzelle

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293451A (en) * 1978-06-08 1981-10-06 Bernd Ross Screenable contact structure and method for semiconductor devices
US4388346A (en) * 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
US20070148810A1 (en) * 2003-11-18 2007-06-28 Sylke Klein Functional paste
US20060102228A1 (en) * 2004-11-12 2006-05-18 Ferro Corporation Method of making solar cell contacts
US20080145633A1 (en) * 2006-06-19 2008-06-19 Cabot Corporation Photovoltaic conductive features and processes for forming same
WO2008018265A1 (en) * 2006-08-09 2008-02-14 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell
EP2051304A1 (de) * 2006-08-09 2009-04-22 Shin-Etsu Handotai Co., Ltd Halbleitersubstrat, verfahren zur bildung einer elektrode und verfahren zur herstellung einer solarzelle
WO2008078374A1 (ja) * 2006-12-25 2008-07-03 Namics Corporation 太陽電池用導電性ペースト
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell
WO2009059302A1 (en) * 2007-11-02 2009-05-07 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Also Published As

Publication number Publication date
WO2010049223A2 (de) 2010-05-06
EP2351090A2 (de) 2011-08-03
DE102009009840A1 (de) 2010-05-27

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