CN103558736A - 用于沉浸式光刻光学系统的清洗方法 - Google Patents

用于沉浸式光刻光学系统的清洗方法 Download PDF

Info

Publication number
CN103558736A
CN103558736A CN201310419409.2A CN201310419409A CN103558736A CN 103558736 A CN103558736 A CN 103558736A CN 201310419409 A CN201310419409 A CN 201310419409A CN 103558736 A CN103558736 A CN 103558736A
Authority
CN
China
Prior art keywords
liquid
optical element
cleaning
during
immersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310419409.2A
Other languages
English (en)
Other versions
CN103558736B (zh
Inventor
安德鲁·J·黑兹尔顿
川井秀实
道格拉斯·C·沃特森
托马斯·W·诺万克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN103558736A publication Critical patent/CN103558736A/zh
Application granted granted Critical
Publication of CN103558736B publication Critical patent/CN103558736B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种用于沉浸式光刻光学系统的清洗方法，涉及的沉浸式光刻装置具有用于保持刻线板的刻线板台，用于保持工件的工件台，和位于工件对面、由照射源和光学元件组成的光学系统，用于通过照射源的辐射投影刻线板的图像。在光学元件和工件之间限定一个间隙，并且一个流体供应器件用于向该间隙内提供沉浸流体，从而在沉浸式光刻处理中使供应的沉浸流体与光学元件和工件均接触。具有一个清洗器件，其用于在清洗处理期间从光学元件除去吸附的液体。该清洗器件可以使用与被吸附液体具有亲和力的清洗液体、加热、真空条件、超声波振荡或者空化泡来除去吸附的液体。清洗液体可以通过相同的具有切换器件例如阀的流体施加器件加以提供。

Description

用于沉浸式光刻光学系统的清洗方法
本分案申请是基于申请号为2004800096916，申请日为2004年4月2日，发明名称为“用于沉浸式光刻光学系统的清洗方法”的中国专利申请的分案申请。更具体说，本分案申请是基于申请号为201010113560.X，申请日为2004年4月2日，发明名称为“用于沉浸式光刻光学系统的清洗方法”的分案申请的再次分案申请。
相关专利申请参考
本申请要求获得如下专利申请的优先权，即美国临时专利申请No.60/462,556，其于2003年4月11日提出申请，和美国临时专利申请No.60/482,913，其于2003年6月27日提出申请，本文引用其内容作为参考。
技术领域
本发明涉及一种沉浸式光刻系统，更特别地，除了系统之外，还涉及一种用于清洗在沉浸式光刻处理中接触并吸附水的光学元件的方法。
背景技术
沉浸式光刻系统用于向工件，例如晶片，和光学系统最后一级光学元件之间的空间内提供液体，用于将刻线板的图像投影到工件上面，这种沉浸式光刻系统如WO99/49504中公开的，本文引用其内容，用于说明该技术的一般背景以及与之有关的一些大体考虑。如此提供的液体能够提高光学系统的性能和曝光的品质。
用于波长为193nm的光线的待提供液体可以是水，尽管对于具有其它波长的光线可能需要不同的液体。因为光学系统最后一级光学元件暴露于液体，所以有可能会吸附一些液体。如果光学系统的最后一级光学元件是透镜，则这种可能性特别高，因为氟化钙是用于光刻系统的普通透镜材料，而它是易吸湿的材料，容易从周围环境中吸附水分。
被吸附的水分会导致多种问题。首先，它会改变透镜的折射性能或者使透镜膨胀从而改变透镜的几何尺寸，从而恶化由透镜投射的图像。其次，它可能由于化学效应导致透镜发生长期恶化。
传统的空气沉浸式曝光光刻系统要求光学元件可以拆卸，以便进行维护工作，例如进行清洗。
然而，除去光学元件以及在清洗之后重置它或者用新的光学元件替换该光学元件是一个繁琐而耗时的操作。
发明内容
因此，本发明的一个目的是提供一种系统和方法，其能够反复地清除透镜上的水从而使被吸附的水量不会达到临界值，进而防止图像恶化和透镜的长期破坏。
本发明的另一个目的是提供一种系统和方法，其使得维护沉浸式光刻装置的光学元件更容易，借此提供光学元件的可用寿命。
本发明的沉浸式光刻装置包括一个用于保持刻线板的刻线板台，一个用于保持工件的工作台，一个光学系统，其包括一个照射源和一个位于工件对面并通过照射源的辐射将刻线板的图像投影在工件上面的光学元件，同时在光学元件和工件之间限定一个间隙，和一个流体提供器件，其在沉浸式光刻处理期间，在光学元件和工件之间提供沉浸流体并使之相互接触。该装置还包括一个用于清洗光学元件的清洗器件。在本文中，术语“清洗”既用于表示清除吸附到光学元件中的液体，也用于表示清除灰尘、碎屑、盐等。
在本发明的范围内可以使用许多与前述不同类型的清洗器件。例如，它可以包括与待和光学元件接触的沉浸流体具有亲和力的清洗液体。如果沉浸液体是水，则可以使用乙醇作为清洗液体。作为另一个实例，清洗器件可以包括用于加热光学元件的发热器件和/或用于在光学元件上产生真空条件的真空器件。
超声波振荡可以用于清除被吸附液体。可以将超声波振荡器，例如压电换能器，附着在光学元件的外罩上或者放置在光学元件的对面，从而通过保持在间隙中的液体向光学元件发射振动。
选择地，可以使用空化泡(cavitating buble)清除被吸附的液体。一个有翼(fin)的衬垫用于在保持在衬垫和光学元件之间的间隙内的液体中产生空化泡。
根据本发明的再一个实施例，通过提供一个流路切换器件(flowroute-switching device)，例如切换阀门，可以选择地使用喷嘴提供清洗液体，通过该喷嘴将沉浸液体供应到工件和光学元件之间的间隙内。
利用本发明的相同和方法，清洗处理变得相当容易而快速，因为不再需要拆卸待清洗的光学元件，并且该清洗处理提高了光学元件的使用寿命。
附图说明
通过联系附图参考下面的说明，可以最佳地理解本发明及其进一步的目的和优点，其中：
图1是可以采用本发明的方法和系统的沉浸式光刻装置的示意性剖面图；
图2是图解根据本发明使用图1所示装置制造半导体器件的示例性处理的处理流程图；
图3是在根据本发明制造半导体器件时，图2所示晶片处理步骤的流程图；
图4是显示图1所示沉浸式光刻装置一部分的侧视图；
图5是具有超声换能器作为清洗器件的另一个沉浸式光刻装置一部分的示意性侧视图；
图6是在光学系统下面具有压电清洗器件的另一个沉浸式光刻装置一部分的示意性侧视图；
图7是压电器件一个实例的示意图；
图8是具有两个相互固定的压电平面元件作为清洗器件的再一个沉浸式光刻装置一部分的示意性侧视图；
图9是具有发泡衬垫作为清洗器件的再一个沉浸式光刻装置一部分的示意性侧视图；和
图10是在流体供应器件内具有切换器件的另一个沉浸式光刻装置一部分的示意性侧视图。
在全部附图中，类似的或等价的部件在不同的附图中用相同的符号或数字表示，并且出于简化说明的目的，可以不再重复解释。
具体实施方式
图1显示了沉浸式光刻装置100，在其上面可以应用本发明的方法和系统。
如图1所示，沉浸式光刻装置100包括一个照射光学单元1，其包括一个光源例如受激准分子激光器单元，一个光学积分器(或者均化器)和一个透镜，该照射光学单元用于发射波长为248nm的紫外光IL，从而入射刻线板R上的图形。刻线板R上的图形通过远心光投影单元(telecentric light projection unit)PL以指定的放大率(例如1/4或1/5)投影到涂覆有光刻胶的晶片W上。脉冲光线IL可以选择的是波长为193nm的ArF受激准分子激光器激光，波长为157nm的F2受激准分子激光器激光，或者波长为365nm的汞灯i线。随后，在说明光刻装置100的结构和功能时，用图1所示的X-,Y-和Z-轴坐标系表示方向。为了便于公开和说明，在图1中，光投影单元PL仅图解了位于晶片W对面的最后一级光学元件(例如透镜)4和包含其余部件的圆柱形外罩3。
刻线板R支持在刻线板台RST上，该刻线板台包括一个用于沿着X方向和Y方向移动刻线板R并围绕Z轴旋转的机构。刻线板R在刻线板台RST上的二维位置和取向由激光干涉计(未显示)实时地检测，并且刻线板R的定位由主控制单元14根据该检测加以影响。
晶片W通过晶片固定器(未显示)固定在Z台9上，用于控制晶片W的聚焦位置(沿着Z轴)和倾角。Z台9固定在XY台上，该XY台适合于在基本上平行于光投影单元PL的成像表面的XY平面上移动。XY台10设定在基座11上。这样，Z台9通过自动聚焦和自动对准(leveling)方法调节晶片W的聚焦位置(沿着Z轴)和倾角，用于使晶片表面与光投影单元PL的图像表面相匹配，并且XY台10用于沿着X方向和Y方向调节晶片W的位置。
Z台9(因此也称作晶片W)的二维位置和取向通过另一个激光干涉仪13并参考固定于Z台9上的可动反射镜实时地加以监视。基于该监视的控制数据从主控制单元14发送到台驱动单元15，该台驱动单元适合于根据所接收的控制数据控制Z台9和XY台10的运动。在曝光时，投影光线根据刻线板R上的图形以步进-重复(step-and-repeat)的程序或者以步进-扫描的(step-and-scan)程序顺序地从晶片W上的一个曝光位置移动到另一个曝光位置。
参考图1说明的光刻装置100是一个沉浸式光刻装置，因此至少在将刻线板R上的图形投影到晶片W上时，其适合于用特殊种类的液体(或者“沉浸液体”)7，例如水，充满晶片W的表面与光投影单元PL最后一级光学元件4的下表面之间的空间(“间隙”)。
光投影单元PL的最后一级光学元件4可以可拆卸地固定在圆柱形外罩3上，并被设计成使液体7只接触最后一级光学元件4而不接触圆柱形外罩3，因为外罩3典型地用金属材料制成，并且容易腐蚀。
液体7在控温的条件下从液体供应单元5提供到晶片W上方的空间并通过液体回收单元6加以收集，该液体供应单元可以包括一个储罐、一个压力泵和一个温度调节器(未单独显示)。液体7的温度被调节成与放置光刻装置100的室内的温度近似相同。数字21表示供应喷嘴，液体7通过它从供应单元5加以提供。数字23表示回收喷嘴，液体7通过它被收集到回收单元6内。然而应当记住，上述参考图1的结构并不对可以应用本发明的清洗方法和器件的沉浸式光刻装置的范围构成限制。换言之，不必问，本发明的清洗方法和器件能够应用于许多不同类型的沉浸式光刻装置。特别地，应当记住，围绕光投影单元PL的供应和回收喷嘴21和23的数目和布置可以按照不同的方式加以设计，以便建立沉浸液体7的平滑流动和快速回收。
下面参考图1和4解释实现本发明的清洗方法，该方法可以除去被由易吸湿材料制成的最后一级光学元件4吸附的部分液体7，例如水，以及灰尘、碎屑等。如图1所示，在液体7存在的情况下，通过光投影单元PL用照射光学单元1的光线曝光晶片W之后，将液体7从光投影单元PL的下方除去，并使清洗器件30与最后一级光学元件4相互接触，如图4所示。在便携式类型的实力中，如图4所示，清洗器件30可以布置在Z台9或者前述的晶片固定器上，如图4所示，替换晶片W。
出于本发明的目的，可以使用不同型号和种类的清洗器件30。作为第一个实例，清洗器件30可以是一个盛有与被光学元件4吸附的沉浸液体7具有强亲和力的液体(“清洗液”)的容器。如果沉浸液体7是水，那么清洗器件30可以容纳乙醇，因为乙醇与水具有强亲和力。任何清洗液体都可以使用，只要它与待清除的液体具有强亲和力且不会破坏光学元件4及其涂层即可。光学元件4的两个表面都浸没在清洗液中一段时间，直到足以除去被吸附液体的水平。之后除去清洗器件30，光学元件4准备好再一次暴露于液体7。
作为另一个实例，清洗器件30可以包含一个发热器件和/或真空器件(未分离显示)。热和真空在光学元件4表面上的组合使得被吸附液体发生相变成为气体，或者从表面上蒸发。光学元件4表面上液体密度的降低使更深层吸附在元件4内的液体7到达表面。
图5显示了第三个实例，其中使用了附着在光投影单元PL的外罩3上的超声换能器(或者超声波振荡器)32。随着超声换能器32(例如压电换能器)被激活，产生并传播压力波，用于清洗光学元件4的表面。
在图5的清洗操作期间，邻近光学元件4的间隙内充满沉浸液体7。在这种情况下，供应和回收喷嘴能够连续地提供和收集沉浸液体7，或者供应和回收喷嘴能够停止供应和收集沉浸液体7。同样在清洗操作期间，光学元件4能够面对晶片W的表面，Z台9的表面或者另一个组件的表面。
图6是在待清洗的光学元件下面使用振荡工具34的第四个实例。工具34的形状可以和晶片W相似，厚度大致等于晶片W的厚度，或者大约未0.5-1mm，并且可以完全用压电材料制成，从而其厚度在被激活时会波动。因为工具34位于光学元件4的下面，类似于图1所示的晶片W，并且光学元件4和工具34之间的间隙内充满液体7，所以在沉浸液体7内产生压力波从而清洗光学元件。
在图6的清洗操作期间，邻近光学元件4的间隙内充满沉浸液体7。这种情况下，供应和回收喷嘴能够连续地提供和收集沉浸液体，或者供应和回收喷嘴能够停止供应和收集沉浸液体7。在其它实例中，振荡器34可以是一个位于Z台9或者其它组件上的附着在晶片固定器上的超声换能器。
图7显示了另一个具有不同结构的工具36，其具有多个用平面支持元件39支持的压电换能器38。
图8显示了清洗器件另外的一个实例，其具有两个以面对面的方式附着在一起的并适合于彼此平行振荡并且相差为180°的压电材料平面元件40。结果，这些元件40彼此附着在一起沿着横向振荡，图8以夸大的方式加以显示。该振荡以恒定的间隔在没有防止元件40的位置具有节点。元件40在这些节点处被支持在支持元件41上。当向这些元件40施加电压使之以上述方式产生振荡时，通过液体7产生并传播超声压力波，从而按照期望清洗光学元件4。
图9显示了液体清除系统的再一个实例，其特点是通过产生空化泡清洗光学元件4。由超声波俘获和赋能的空化泡是高温高压的微反应器，由气泡的内爆压缩(implosive compression)释放的强大能量被认为能够将分子拨开。图9所示实例的特点是包括一个衬垫43，其具有向上突出的翼，并且如光学元件4下面的箭头所示地水平快速移动，同时用发泡液体7填充其间的间隙9（用于移动衬垫43的装置，未显示）。随着如此移动衬垫43，翼用于搅动液体17并产生用于清洗光学元件的空化泡。
图10显示了一种解决清洗最后一级光学元件4的问题的不同方法，其是通过使用与提供沉浸液体7同源的喷嘴21在其底表面上施加清洗液。出于这个目的，在供应喷嘴21和液体单元5之间插入切换阀门25，从而能够使沉浸液体7和清洗液选择地通过供应喷嘴21。
要再次记住，根据本发明的清洗方法和系统能够应用于不同类型和种类，也就是，具有不同数目源喷嘴，的沉浸式光刻装置。上述的切换阀门不需要提供给每个源喷嘴，而是可以提供给一组源喷嘴。
当如此通过供应喷嘴21提供清洗液时，也许适合于放置在光学元件4下方的晶片W本身或者衬垫18能够在其间提供合适的间隙。本发明的这一实施例是有利的，因为能够使用已有的用于提供沉浸液体的相同喷嘴进行清洗处理。
尽管上面分别说明各种方法，当时无需说明也应理解，它们也可以组合使用，尽管附图中并没有分别显示。例如，图9所示具有翼的衬垫43可以代替图10所示的衬垫18。换言之，上述的实例并不限制本发明的范围，在本发明的范围内可以有许多的修饰和改变。例如，可以使用类似于在化学机械抛光处理中使用的抛光衬垫实现本目的。图4-10显示的清洗程序可以用紫外光执行。光线可以辐照光学元件4。该光线可以是来自照射光学元件4的正常曝光光线，或者其它具有适合于清洗的波长的光线。在其它实例中，可以使用用于清洗的紫外光，而不用图4-10所示的清洗程序，并且可以在如下的条件下使用，即邻近光学元件4的间隙内充满来自液体供应单元5的沉浸液体7。所有这些修改和变化对于本领域的技术人员而言都是显而易见的，并且都在本发明的范围之内。
再一次，应当注意，任何上述的清洗方法既可以用于清除被最后一级光学元件吸附的沉浸液体，也可以用于清除有可能积累的盐、沉积物、灰尘和碎屑。因此术语清洗在这里包括这两种现象。
下面参考图2说明使用实现本发明的包括液体喷射和回收系统的沉浸式光刻装置制造半导体器件的处理。在步骤301，设计器件的功能和性能特征。接着在步骤302，根据先前的设计步骤设计具有图形的掩模(刻线板)，在平行的步骤303中，用硅材料制造晶片。在步骤304，通过平板照相系统，例如上述的系统，将在步骤302中设计的掩模图形曝光到在步骤303中制造的晶片上。在步骤305，组装半导体器件(包括切片处理，键合处理和封装处理)，然后在步骤306检查最终的器件。
图3图解了在制造半导体器件时上述步骤304的详细流程实例。在步骤311(氧化步骤)，晶片表面被氧化。在步骤312(CVD步骤)，在晶片表面上形成绝缘膜。在步骤313(电极形成步骤)，通过气相沉积在晶片上形成电极。在步骤314(离子植入步骤)，在晶片内植入离子。前述的步骤311-314形成了晶片处理期间的预处理步骤，并且在每一步都可以根据需要进行选择。
在晶片处理的每个阶段，当上述预处理步骤完成时，执行如下的后处理步骤。在后处理期间，在步骤315(光刻胶形成步骤)，将光刻胶施加到晶片上。接着在步骤316(曝光步骤)，使用上述的曝光器件将掩模(刻线板)上的电路图转移到晶片上。然后在步骤317(显影步骤)，对曝光晶片进行显影，并且在步骤318(腐蚀步骤)，通过腐蚀除去除残余光刻胶之外的部分(曝光材料表面)。在步骤319(光刻胶清除步骤)，除去在腐蚀之后剩余的不必要光刻胶。通过重复这些处理和后处理步骤可以形成多个电路图。
尽管本发明的光刻系统是通过多个优选实施例加以说明，但是可选择的、可置换的和各种可替代的等价物也在本发明的范围内。还应当注意，存在许多可选择的方法用于实现本发明的方法和装置。因此，如下的权利要求包括所有这些处于本发明精神和范围之内的可选择的、可置换的和各种可替代的等价物。

Claims (12)

1.一种用于沉浸式光刻装置的清洗方法，其中在沉浸式光刻处理期间，用于光刻的工件位于台上，具有光学元件的投影光学系统在所述工件的上方并与之相对，在所述光学元件与所述工件之间提供间隙，所述方法包括如下步骤：
在清洗处理期间将清洗器件置于所述台上；以及
在所述清洗处理期间在所述光学元件与于所述台上的所述清洗器件之间供应液体，所述光学元件在所述清洗处理期间与所供应的液体接触。
2.根据权利要求1的清洗方法，其中所述清洗处理在所述沉浸式光刻处理之后进行。
3.根据权利要求1的清洗方法，其中在所述清洗处理期间所供应的所述液体是水。
4.根据权利要求1的清洗方法，其中所述液体的供应与所供应的液体的收集在所述清洗处理期间继续进行。
5.一种沉浸式光刻装置，其中，在沉浸式光刻处理期间，在光学元件与用于光刻的工件之间提供间隙，所述沉浸式光刻装置包括：
台，用于光刻的所述工件在所述沉浸式光刻处理期间保持于其上，并且清洗器件在清洗处理期间置于其上；
具有所述光学元件的投影光学系统，其在所述沉浸式光刻处理期间是在所述工件的上方并与之相对；以及
喷嘴，被设置为在所述沉浸式光刻处理期间向在所述光学元件与于所述台上的所述工件之间的所述间隙供应沉浸液体，并且被设置为在所述清洗处理期间向所述光学元件与于所述台上的所述清洗器件之间的间隙供应液体，所述光学组件在所述清洗处理期间与所供应的液体接触。
6.根据权利要求5的装置，其中所述清洗处理在所述沉浸式光刻处理之后进行。
7.根据权利要求5的装置，其中在所述清洗处理期间所供应的所述液体是水。
8.根据权利要求5的装置，其中所述液体的供应与所供应的液体的收集在所述清洗处理期间继续进行。
9.一种器件制造方法，包括：
通过权利要求5-8中任一项的装置曝光晶片；以及
显影所曝光的晶片。
10.一种用于沉浸式光刻装置的清洗方法，所述方法包括：
在清洗处理期间将投影光学系统的光学元件浸没在一种液体中；以及
在所述清洗处理期间将光执行施加于所述光学元件。
11.根据权利要求10的清洗方法，其中所述光是紫外光。
12.根据权利要求11的清洗方法，其中所述光是曝光光线。
CN201310419409.2A 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法 Expired - Fee Related CN103558736B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US46255603P 2003-04-11 2003-04-11
US60/462,556 2003-04-11
US48291303P 2003-06-27 2003-06-27
US60/482,913 2003-06-27
CN2004800096916A CN1867865B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2004800096916A Division CN1867865B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法

Publications (2)

Publication Number Publication Date
CN103558736A true CN103558736A (zh) 2014-02-05
CN103558736B CN103558736B (zh) 2016-10-05

Family

ID=33303091

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201610820643.XA Pending CN106444292A (zh) 2003-04-11 2004-04-02 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
CN201310419409.2A Expired - Fee Related CN103558736B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法
CN2004800096916A Expired - Fee Related CN1867865B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法
CN201010113560XA Expired - Fee Related CN101825847B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201610820643.XA Pending CN106444292A (zh) 2003-04-11 2004-04-02 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2004800096916A Expired - Fee Related CN1867865B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法
CN201010113560XA Expired - Fee Related CN101825847B (zh) 2003-04-11 2004-04-02 用于沉浸式光刻光学系统的清洗方法

Country Status (10)

Country Link
US (10) US7522259B2 (zh)
EP (6) EP1614001B1 (zh)
JP (10) JP4837556B2 (zh)
KR (11) KR101508810B1 (zh)
CN (4) CN106444292A (zh)
AT (1) ATE449982T1 (zh)
DE (1) DE602004024295D1 (zh)
HK (3) HK1087531A1 (zh)
SG (5) SG185136A1 (zh)
WO (1) WO2004093130A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104941948A (zh) * 2014-03-26 2015-09-30 斯克林集团公司 基板清洗方法及基板清洗装置
CN107442518A (zh) * 2016-05-31 2017-12-08 上海微电子装备（集团）股份有限公司 一种光刻机工件台自动清洁装置及方法

Families Citing this family (212)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1420299B1 (en) * 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
KR20120127755A (ko) 2002-12-10 2012-11-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
SG171468A1 (en) * 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
TWI591445B (zh) 2003-02-26 2017-07-11 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
WO2004086470A1 (ja) 2003-03-25 2004-10-07 Nikon Corporation 露光装置及びデバイス製造方法
ATE426914T1 (de) 2003-04-07 2009-04-15 Nikon Corp Belichtungsgerat und verfahren zur herstellung einer vorrichtung
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP3352010A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
EP2950148B1 (en) 2003-04-10 2016-09-21 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR101861493B1 (ko) 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
CN106444292A (zh) 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI612556B (zh) 2003-05-23 2018-01-21 Nikon Corp 曝光裝置、曝光方法及元件製造方法
TWI612557B (zh) 2003-05-23 2018-01-21 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
CN100541717C (zh) 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200511388A (en) 2003-06-13 2005-03-16 Nikon Corp Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
TW201721717A (zh) 2003-06-19 2017-06-16 尼康股份有限公司 曝光裝置、曝光方法、及元件製造方法
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP2853943B1 (en) 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
WO2005006418A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
KR20060026883A (ko) 2003-07-09 2006-03-24 가부시키가이샤 니콘 결합장치, 노광장치 및 디바이스 제조방법
ATE513309T1 (de) 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
EP3346485A1 (en) 2003-07-25 2018-07-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
KR101599649B1 (ko) 2003-07-28 2016-03-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7370659B2 (en) * 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
KR101242886B1 (ko) 2003-08-29 2013-03-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP3223053A1 (en) 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101301804B1 (ko) 2003-09-26 2013-08-29 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법
EP3093711A3 (en) 2003-09-29 2017-05-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
SG2014014955A (en) 2003-12-03 2014-07-30 Nippon Kogaku Kk Exposure apparatus, exposure method, method for producing device, and optical part
KR101499405B1 (ko) 2003-12-15 2015-03-05 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
JP4308638B2 (ja) 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
KR101204157B1 (ko) 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4548341B2 (ja) * 2004-02-10 2010-09-22 株式会社ニコン 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
TWI402893B (zh) 2004-03-25 2013-07-21 尼康股份有限公司 曝光方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100594430C (zh) 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
KR101433496B1 (ko) * 2004-06-09 2014-08-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
JP4677833B2 (ja) * 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
KR101245070B1 (ko) * 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
US20060001851A1 (en) 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602005016429D1 (de) 2004-07-12 2009-10-15 Nippon Kogaku Kk Hren
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4983257B2 (ja) 2004-08-18 2012-07-25 株式会社ニコン 露光装置、デバイス製造方法、計測部材、及び計測方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
US7385670B2 (en) * 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
WO2006046562A1 (ja) 2004-10-26 2006-05-04 Nikon Corporation 基板処理方法、露光装置及びデバイス製造方法
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070285634A1 (en) 2004-11-19 2007-12-13 Nikon Corporation Maintenance Method, Exposure Method, Exposure Apparatus, And Method For Producing Device
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006062065A1 (ja) 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
EP1863070B1 (en) 2005-01-31 2016-04-27 Nikon Corporation Exposure apparatus and method for manufacturing device
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
CN102360170B (zh) 2005-02-10 2014-03-12 Asml荷兰有限公司 浸没液体、曝光装置及曝光方法
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4072543B2 (ja) 2005-03-18 2008-04-09 キヤノン株式会社 液浸露光装置及びデバイス製造方法
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5045437B2 (ja) * 2005-06-21 2012-10-10 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007004552A1 (ja) 2005-06-30 2007-01-11 Nikon Corporation 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
US7583358B2 (en) * 2005-07-25 2009-09-01 Micron Technology, Inc. Systems and methods for retrieving residual liquid during immersion lens photolithography
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7456928B2 (en) * 2005-08-29 2008-11-25 Micron Technology, Inc. Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP2007123775A (ja) * 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd 洗浄液および洗浄方法
JP5036996B2 (ja) * 2005-10-31 2012-09-26 東京応化工業株式会社 洗浄液および洗浄方法
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
JP2007142217A (ja) * 2005-11-18 2007-06-07 Taiwan Semiconductor Manufacturing Co Ltd イマージョン式リソグラフィ露光装置およびその方法
FR2893725B1 (fr) * 2005-11-21 2009-05-29 Taiwan Semiconductor Mfg Dispositif et procede d'exposition de lithographie par immersion megasonique
TWI413155B (zh) * 2005-11-22 2013-10-21 Tokyo Ohka Kogyo Co Ltd 光微影蝕刻用洗淨液及使用其之曝光裝置之洗淨方法
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
JP2007150102A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 露光装置及び光学素子の洗浄方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8472004B2 (en) * 2006-01-18 2013-06-25 Micron Technology, Inc. Immersion photolithography scanner
KR20080114691A (ko) * 2006-03-13 2008-12-31 가부시키가이샤 니콘 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
EP2535744A3 (en) 2006-04-03 2013-10-09 Nikon Corporation Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
WO2007135990A1 (ja) 2006-05-18 2007-11-29 Nikon Corporation 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
JP5019170B2 (ja) * 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
US20070280526A1 (en) * 2006-05-30 2007-12-06 Irfan Malik Determining Information about Defects or Binning Defects Detected on a Wafer after an Immersion Lithography Process is Performed on the Wafer
US8564759B2 (en) 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
JP5151981B2 (ja) * 2006-08-30 2013-02-27 株式会社ニコン 露光装置及びデバイス製造方法
KR20090060270A (ko) * 2006-09-08 2009-06-11 가부시키가이샤 니콘 클리닝용 부재, 클리닝 방법, 그리고 디바이스 제조 방법
DE102006050835A1 (de) 2006-10-27 2008-05-08 Carl Zeiss Smt Ag Verfahren und Vorrichtung zum Austausch von Objetkivteilen
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5099476B2 (ja) * 2006-12-28 2012-12-19 株式会社ニコン 清掃装置及び清掃システム、パターン形成装置、清掃方法及び露光方法、並びにデバイス製造方法
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) * 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
WO2008146819A1 (ja) * 2007-05-28 2008-12-04 Nikon Corporation 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
JP5018249B2 (ja) * 2007-06-04 2012-09-05 株式会社ニコン クリーニング装置、クリーニング方法、露光装置、及びデバイス製造方法
US20090014030A1 (en) * 2007-07-09 2009-01-15 Asml Netherlands B.V. Substrates and methods of using those substrates
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US7916269B2 (en) * 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
NL1035942A1 (nl) * 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5017232B2 (ja) * 2007-10-31 2012-09-05 エーエスエムエル ネザーランズ ビー．ブイ． クリーニング装置および液浸リソグラフィ装置
NL1036273A1 (nl) * 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100039628A1 (en) * 2008-03-19 2010-02-18 Nikon Corporation Cleaning tool, cleaning method, and device fabricating method
US8654306B2 (en) * 2008-04-14 2014-02-18 Nikon Corporation Exposure apparatus, cleaning method, and device fabricating method
NL1036709A1 (nl) 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
US20100045949A1 (en) * 2008-08-11 2010-02-25 Nikon Corporation Exposure apparatus, maintaining method and device fabricating method
NL2003363A (en) 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
NL2003421A (en) * 2008-10-21 2010-04-22 Asml Netherlands Bv Lithographic apparatus and a method of removing contamination.
US8477284B2 (en) * 2008-10-22 2013-07-02 Nikon Corporation Apparatus and method to control vacuum at porous material using multiple porous materials
US9074169B2 (en) 2009-01-28 2015-07-07 Advanced Technology Materials, Inc. Lithographic tool in situ clean formulations
TW201102765A (en) * 2009-07-01 2011-01-16 Nikon Corp Grinding device, grinding method, exposure device and production method of a device
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
US20110134400A1 (en) * 2009-12-04 2011-06-09 Nikon Corporation Exposure apparatus, liquid immersion member, and device manufacturing method
WO2011090690A1 (en) * 2009-12-28 2011-07-28 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
US20110201888A1 (en) * 2010-02-18 2011-08-18 Verner Sarah N Medical Devices and Methods
US20120062858A1 (en) * 2010-04-02 2012-03-15 Nikon Corporation Cleaning method, device manufacturing method, exposure apparatus, and device manufacturing system
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US20120188521A1 (en) 2010-12-27 2012-07-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
DE102013100473A1 (de) * 2013-01-17 2014-07-17 Seho Systemtechnik Gmbh Verfahren und Vorrichtung zum Reinigen einer Lötdüse
US9776218B2 (en) * 2015-08-06 2017-10-03 Asml Netherlands B.V. Controlled fluid flow for cleaning an optical element
US10018113B2 (en) * 2015-11-11 2018-07-10 General Electric Company Ultrasonic cleaning system and method
CN115093008B (zh) 2015-12-21 2024-05-14 德尔塔阀门公司 包括消毒装置的流体输送系统
US10962471B1 (en) * 2018-07-09 2021-03-30 Fazal Fazlin Point of care system for quantifying components of blood
JP6650539B1 (ja) * 2019-01-18 2020-02-19 エヌ・ティ・ティ・アドバンステクノロジ株式会社 光コネクタ用清掃具
CN111167803A (zh) * 2019-12-14 2020-05-19 上海航翼高新技术发展研究院有限公司 一种激光湿清洗方法及装置
CN113070273A (zh) * 2020-01-03 2021-07-06 中国科学院上海硅酸盐研究所 一种提高氟化钙晶体光学元件激光损伤阈值的表面处理方法
CN114518696A (zh) 2020-11-20 2022-05-20 长鑫存储技术有限公司 清洁系统、曝光机台及清洁方法
CN112563166B (zh) * 2020-12-01 2024-07-16 中国计量大学 一种真空脱泡装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091207A (ja) * 1998-09-14 2000-03-31 Nikon Corp 投影露光装置及び投影光学系の洗浄方法
US6496257B1 (en) * 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method

Family Cites Families (293)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3139101A (en) * 1962-07-23 1964-06-30 Gen Motors Corp Sonic surface cleaner
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
DE2963537D1 (en) * 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6197918A (ja) 1984-10-19 1986-05-16 Hitachi Ltd Ｘ線露光装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPH0782981B2 (ja) 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPH0695511B2 (ja) 1986-09-17 1994-11-24 大日本スクリ−ン製造株式会社 洗浄乾燥処理方法
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH0345522U (zh) * 1989-09-08 1991-04-26
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH05100182A (ja) 1991-10-11 1993-04-23 Nikon Corp レーザトラツプ集塵装置及び集塵方法
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06459A (ja) * 1992-06-19 1994-01-11 T H I Syst Kk 洗浄乾燥方法とその装置
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH06181157A (ja) 1992-12-15 1994-06-28 Nikon Corp 低発塵性の装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JP3613288B2 (ja) 1994-10-18 2005-01-26 株式会社ニコン 露光装置用のクリーニング装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JP3647100B2 (ja) 1995-01-12 2005-05-11 キヤノン株式会社 検査装置およびこれを用いた露光装置やデバイス生産方法
JPH08195375A (ja) 1995-01-17 1996-07-30 Sony Corp 回転乾燥方法および回転乾燥装置
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US6297871B1 (en) 1995-09-12 2001-10-02 Nikon Corporation Exposure apparatus
US5798838A (en) 1996-02-28 1998-08-25 Nikon Corporation Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same
JP3349636B2 (ja) 1996-10-04 2002-11-25 株式会社プレテック 高周波洗浄装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10116760A (ja) 1996-10-08 1998-05-06 Nikon Corp 露光装置及び基板保持装置
US6033478A (en) 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
SG93267A1 (en) 1996-11-28 2002-12-17 Nikon Corp An exposure apparatus and an exposure method
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
DE69817663T2 (de) * 1997-04-23 2004-06-24 Nikon Corp. Optischer Belichtungsapparat und optisches Reinigungsverfahren
US6268904B1 (en) * 1997-04-23 2001-07-31 Nikon Corporation Optical exposure apparatus and photo-cleaning method
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
EP0991777A1 (en) * 1997-06-18 2000-04-12 Ulrich J. Krull Nucleic acid biosensor diagnostics
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5980647A (en) * 1997-07-15 1999-11-09 International Business Machines Corporation Metal removal cleaning process and apparatus
US6085764A (en) * 1997-07-22 2000-07-11 Tdk Corporation Cleaning apparatus and method
JP3445120B2 (ja) 1997-09-30 2003-09-08 キヤノン株式会社 露光装置及びデバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11283903A (ja) * 1998-03-30 1999-10-15 Nikon Corp 投影光学系検査装置及び同装置を備えた投影露光装置
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
JPH11166990A (ja) 1997-12-04 1999-06-22 Nikon Corp ステージ装置及び露光装置並びに走査型露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11191525A (ja) * 1997-12-26 1999-07-13 Nikon Corp 投影露光装置
DE19806284C2 (de) * 1998-02-16 2000-02-24 Inventa Ag Wärmehärtbare Beschichtungsmassen, Verfahren zur Herstellung und deren Verwendung
JP4207240B2 (ja) 1998-02-20 2009-01-14 株式会社ニコン 露光装置用照度計、リソグラフィ・システム、照度計の較正方法およびマイクロデバイスの製造方法
US5913981A (en) 1998-03-05 1999-06-22 Micron Technology, Inc. Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US5958143A (en) 1998-04-28 1999-09-28 The Regents Of The University Of California Cleaning process for EUV optical substrates
US6459472B1 (en) 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000097616A (ja) 1998-09-22 2000-04-07 Nikon Corp 干渉計
JP2000311933A (ja) 1999-04-27 2000-11-07 Canon Inc 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法
JP2000354835A (ja) 1999-06-15 2000-12-26 Toshiba Corp 超音波洗浄処理方法及びその装置
JP2001013677A (ja) * 1999-06-28 2001-01-19 Shin Etsu Chem Co Ltd ペリクル収納容器の洗浄方法
US6459672B1 (en) 1999-09-28 2002-10-01 Sony Corporation Optical head and optical disc device
AU6005499A (en) * 1999-10-07 2001-04-23 Nikon Corporation Substrate, stage device, method of driving stage, exposure system and exposure method
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6421932B2 (en) 2000-02-14 2002-07-23 Hitachi Electronics Engineering Co., Ltd. Method and apparatus for drying substrate plates
HU225403B1 (en) * 2000-03-13 2006-11-28 Andras Dr Boerzsoenyi Method and apparatus for calibration of flowmeter of liquid flowing in canal
JP3996730B2 (ja) 2000-03-31 2007-10-24 株式会社日立製作所 半導体部品の製造方法
US6466365B1 (en) 2000-04-07 2002-10-15 Corning Incorporated Film coated optical lithography elements and method of making
JP2001291855A (ja) 2000-04-08 2001-10-19 Takashi Miura 固体撮像素子
JP3531914B2 (ja) 2000-04-14 2004-05-31 キヤノン株式会社 光学装置、露光装置及びデバイス製造方法
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
DE10130999A1 (de) * 2000-06-29 2002-04-18 D M S Co Multifunktions-Reinigungsmodul einer Herstellungseinrichtung für Flachbildschirme und Reinigungsgerät mit Verwendung desselben
US6446365B1 (en) 2000-09-15 2002-09-10 Vermeer Manufacturing Company Nozzle mount for soft excavation
KR100798769B1 (ko) 2000-09-25 2008-01-29 동경 엘렉트론 주식회사 기판 처리장치
JP3840388B2 (ja) 2000-09-25 2006-11-01 東京エレクトロン株式会社 基板処理装置
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002289514A (ja) 2000-12-22 2002-10-04 Nikon Corp 露光装置及び露光方法
JP4345098B2 (ja) 2001-02-06 2009-10-14 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
DE10123027B4 (de) 2001-05-11 2005-07-21 Evotec Oai Ag Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben
JP2002336804A (ja) * 2001-05-15 2002-11-26 Nikon Corp 光学部品の洗浄方法及び露光装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US7145671B2 (en) 2001-08-16 2006-12-05 Hewlett-Packard Development Company, L.P. Image forming devices, methods of operating an image forming device, a method of providing consumable information, and a method of operating a printer
JP2003124089A (ja) 2001-10-09 2003-04-25 Nikon Corp 荷電粒子線露光装置及び露光方法
US6801301B2 (en) 2001-10-12 2004-10-05 Canon Kabushiki Kaisha Exposure apparatus
EP1313337A1 (de) 2001-11-15 2003-05-21 Siemens Aktiengesellschaft Verfahren zur Übertragung von Informationen in einem zellularen Funkkommunikationssystem mit Funksektoren
EP1329773A3 (en) 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
US20030200996A1 (en) 2002-04-30 2003-10-30 Hiatt William Mark Method and system for cleaning a wafer chuck
KR20040104691A (ko) 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
US6853794B2 (en) * 2002-07-02 2005-02-08 Lightel Technologies Inc. Apparatus for cleaning optical fiber connectors and fiber optic parts
US20040021061A1 (en) 2002-07-30 2004-02-05 Frederik Bijkerk Photodiode, charged-coupled device and method for the production
JP2004071855A (ja) 2002-08-07 2004-03-04 Tokyo Electron Ltd 基板処理装置及び基板処理方法
AU2003256081A1 (en) 2002-08-23 2004-03-11 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP3922637B2 (ja) 2002-08-30 2007-05-30 本田技研工業株式会社 サイドエアバッグシステム
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP3884371B2 (ja) 2002-11-26 2007-02-21 株式会社東芝 レチクル、露光モニタ方法、露光方法、及び半導体装置の製造方法
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4525062B2 (ja) 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
KR20120127755A (ko) 2002-12-10 2012-11-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
US7514699B2 (en) 2002-12-19 2009-04-07 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
EP1732075A3 (en) 2002-12-19 2007-02-21 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
JP2004007417A (ja) 2003-02-10 2004-01-08 Fujitsu Ltd 情報提供システム
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
WO2004081999A1 (ja) * 2003-03-12 2004-09-23 Nikon Corporation 光学装置、露光装置、並びにデバイス製造方法
GB0306176D0 (en) * 2003-03-18 2003-04-23 Imp College Innovations Ltd Tubing
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP3352010A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
EP2950148B1 (en) 2003-04-10 2016-09-21 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
CN106444292A (zh) * 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR101861493B1 (ko) 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20060009356A (ko) 2003-05-15 2006-01-31 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI612556B (zh) * 2003-05-23 2018-01-21 Nikon Corp 曝光裝置、曝光方法及元件製造方法
TWI612557B (zh) * 2003-05-23 2018-01-21 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
US6995833B2 (en) 2003-05-23 2006-02-07 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
JP2005277363A (ja) 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
CN100541717C (zh) 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
JP2004356356A (ja) 2003-05-29 2004-12-16 Oki Electric Ind Co Ltd 洗浄終了判定方法および洗浄装置
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP2007527615A (ja) 2003-07-01 2007-09-27 株式会社ニコン 同位体特定流体の光学素子としての使用方法
KR101209539B1 (ko) 2003-07-09 2012-12-07 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
FR2857292B1 (fr) * 2003-07-11 2007-04-20 Oreal Recipient comportant une piece de revetement et son procede de fabrication
US7153406B2 (en) * 2003-07-15 2006-12-26 E. I. Du Pont De Nemours And Company Cathodic electrodeposition coating compositions and process for using same
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
KR101599649B1 (ko) 2003-07-28 2016-03-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7370659B2 (en) 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (ja) 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI622083B (zh) 2003-08-29 2018-04-21 Nikon Corp Exposure apparatus, liquid removal method, and component manufacturing method
KR101242886B1 (ko) 2003-08-29 2013-03-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
JP4305095B2 (ja) 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP3223053A1 (en) 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
KR101301804B1 (ko) 2003-09-26 2013-08-29 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524588A1 (en) 2003-10-15 2005-04-20 Sony Ericsson Mobile Communications AB User input device for a portable electronic device
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
JP2007525824A (ja) 2003-11-05 2007-09-06 ディーエスエム アイピー アセッツ ビー．ブイ． マイクロチップを製造するための方法および装置
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
KR101499405B1 (ko) 2003-12-15 2015-03-05 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
US7145641B2 (en) 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
WO2005067013A1 (ja) 2004-01-05 2005-07-21 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101204114B1 (ko) 2004-01-14 2012-11-23 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN1910522B (zh) 2004-01-16 2010-05-26 卡尔蔡司Smt股份公司 偏振调制光学元件
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
KR101204157B1 (ko) 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
EP1723467A2 (en) 2004-02-03 2006-11-22 Rochester Institute of Technology Method of photolithography using a fluid and a system thereof
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4548341B2 (ja) 2004-02-10 2010-09-22 株式会社ニコン 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
EP1727188A4 (en) 2004-02-20 2008-11-26 Nikon Corp EXPOSURE DEVICE, FEEDING METHOD AND RECOVERY METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100594430C (zh) 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
KR101433496B1 (ko) * 2004-06-09 2014-08-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006062065A1 (ja) 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
US7921303B2 (en) * 2005-11-18 2011-04-05 Qualcomm Incorporated Mobile security system and method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7446859B2 (en) 2006-01-27 2008-11-04 International Business Machines Corporation Apparatus and method for reducing contamination in immersion lithography
JP5304072B2 (ja) 2007-07-18 2013-10-02 ヤマハ株式会社 力覚制御装置、鍵盤楽器、力覚制御方法およびプログラム
US8033602B2 (en) * 2007-07-20 2011-10-11 Honda Motor Co., Ltd. Vehicle seat
US20090025753A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6496257B1 (en) * 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
JP2000091207A (ja) * 1998-09-14 2000-03-31 Nikon Corp 投影露光装置及び投影光学系の洗浄方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104941948A (zh) * 2014-03-26 2015-09-30 斯克林集团公司 基板清洗方法及基板清洗装置
CN104941948B (zh) * 2014-03-26 2017-03-22 斯克林集团公司 基板清洗方法及基板清洗装置
CN107442518A (zh) * 2016-05-31 2017-12-08 上海微电子装备（集团）股份有限公司 一种光刻机工件台自动清洁装置及方法

Also Published As

Publication number Publication date
KR20140048312A (ko) 2014-04-23
JP5648650B2 (ja) 2015-01-07
US8670103B2 (en) 2014-03-11
US20070132975A1 (en) 2007-06-14
EP2172809A1 (en) 2010-04-07
US8085381B2 (en) 2011-12-27
JP5799991B2 (ja) 2015-10-28
US8269946B2 (en) 2012-09-18
EP2166413A1 (en) 2010-03-24
JP2018025818A (ja) 2018-02-15
EP1614001A2 (en) 2006-01-11
JP6319393B2 (ja) 2018-05-09
JP2014225703A (ja) 2014-12-04
KR101525335B1 (ko) 2015-06-03
KR20130079622A (ko) 2013-07-10
US7522259B2 (en) 2009-04-21
EP2161621A1 (en) 2010-03-10
EP2172809B1 (en) 2018-11-07
EP2161621B1 (en) 2018-10-24
ATE449982T1 (de) 2009-12-15
KR101318542B1 (ko) 2013-10-16
KR20110122747A (ko) 2011-11-10
HK1145547A1 (en) 2011-04-21
EP2161619A1 (en) 2010-03-10
EP2161620A1 (en) 2010-03-10
CN101825847A (zh) 2010-09-08
KR20170016014A (ko) 2017-02-10
KR101753496B1 (ko) 2017-07-03
CN1867865A (zh) 2006-11-22
SG10201803122UA (en) 2018-06-28
US20080100813A1 (en) 2008-05-01
JP2019045873A (ja) 2019-03-22
US9958786B2 (en) 2018-05-01
EP2161619B1 (en) 2013-05-22
JP2006523031A (ja) 2006-10-05
JP4837556B2 (ja) 2011-12-14
JP2011171758A (ja) 2011-09-01
US8670104B2 (en) 2014-03-11
KR101289959B1 (ko) 2013-07-26
WO2004093130A2 (en) 2004-10-28
SG185136A1 (en) 2012-11-29
CN1867865B (zh) 2010-04-07
JP2010093298A (ja) 2010-04-22
SG2013077797A (en) 2017-02-27
US8493545B2 (en) 2013-07-23
JP6135737B2 (ja) 2017-05-31
EP1614001B1 (en) 2009-11-25
KR20110105856A (ko) 2011-09-27
JP2013251573A (ja) 2013-12-12
KR20190007532A (ko) 2019-01-22
SG189557A1 (en) 2013-05-31
KR101597475B1 (ko) 2016-02-24
US20070171390A1 (en) 2007-07-26
US20180203366A1 (en) 2018-07-19
KR101508809B1 (ko) 2015-04-06
KR20150024929A (ko) 2015-03-09
DE602004024295D1 (de) 2010-01-07
US20090195762A1 (en) 2009-08-06
KR20120115589A (ko) 2012-10-18
JP4983933B2 (ja) 2012-07-25
KR20050121722A (ko) 2005-12-27
US20060023185A1 (en) 2006-02-02
KR20120066083A (ko) 2012-06-21
US20090161084A1 (en) 2009-06-25
CN101825847B (zh) 2013-10-16
CN103558736B (zh) 2016-10-05
JP2017037333A (ja) 2017-02-16
US20070247601A1 (en) 2007-10-25
JP5582087B2 (ja) 2014-09-03
EP2161619B8 (en) 2013-07-17
KR101342824B1 (ko) 2013-12-17
JP2016053721A (ja) 2016-04-14
CN106444292A (zh) 2017-02-22
KR20110134487A (ko) 2011-12-14
HK1142964A1 (en) 2010-12-17
JP2012138624A (ja) 2012-07-19
KR101508810B1 (ko) 2015-04-14
SG2014015135A (en) 2015-06-29
US20090174872A1 (en) 2009-07-09
EP1614001A4 (en) 2007-05-16
HK1087531A1 (en) 2006-10-13
US20140132939A1 (en) 2014-05-15
KR101324818B1 (ko) 2013-11-01
WO2004093130A3 (en) 2005-11-03
JP6020528B2 (ja) 2016-11-02

Similar Documents

Publication Publication Date Title
CN101825847B (zh) 用于沉浸式光刻光学系统的清洗方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1195135

Country of ref document: HK

CB03 Change of inventor or designer information

Inventor after: Hazelton Andrew J

Inventor after: Kawai Hidemi

Inventor after: Watson Douglas C.

Inventor after: W Thomas Nuowanke

Inventor before: Hazelton Andrew J

Inventor before: Kawai Hidemi

Inventor before: Watson Douglas C.

Inventor before: Novak W. T.

COR Change of bibliographic data
C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1195135

Country of ref document: HK

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161005

Termination date: 20200402