CN101114086A - 液晶显示装置 - Google Patents

液晶显示装置 Download PDF

Info

Publication number
CN101114086A
CN101114086A CNA2007101392005A CN200710139200A CN101114086A CN 101114086 A CN101114086 A CN 101114086A CN A2007101392005 A CNA2007101392005 A CN A2007101392005A CN 200710139200 A CN200710139200 A CN 200710139200A CN 101114086 A CN101114086 A CN 101114086A
Authority
CN
China
Prior art keywords
common
aforementioned
liquid crystal
periphery
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007101392005A
Other languages
English (en)
Other versions
CN100510913C (zh
Inventor
小野木智英
濑川泰生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Sanyo Epson Imaging Devices Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Epson Imaging Devices Corp filed Critical Sanyo Epson Imaging Devices Corp
Publication of CN101114086A publication Critical patent/CN101114086A/zh
Application granted granted Critical
Publication of CN100510913C publication Critical patent/CN100510913C/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供一种可充分确保对共通电极提供共通电位，且提升像素的开口率以获得明亮显示的FFS方式的液晶显示装置。像素电极(21)是以第一层透明电极所形成，在该像素电极(21)的上层隔着绝缘膜(22)形成有由第二层透明电极所形成的共通电极(23A)。再者，在上层的共通电极(23A)设有多个开缝S。共通电极(23A)横跨显示区域(70)的全部像素。共通电极(23A)的端部是连接至配置在显示区域(70)外、且用以提供共通电位Vcom的外周共通电位线(50)。而现有例的共通电极辅助线(15)、垫电极(19)则未设置。

Description

液晶显示装置
技术领域
本发明涉及一种液晶显示装置，特别是指通过在像素电极与共通电极之间产生的横方向电场来控制液晶分子的配向方向的液晶显示装置。
背景技术
作为谋求液晶显示装置的广视角化的手段之一，开发有一种通过在同一衬底上的电极间产生横方向的电场，并利用该电场使液晶分子在与衬底平行的面内旋转，从而使之具有光开关功能的方式。该技术的例子已知有横向电场切换(In-Plane Switching，以下简称IPS)方式，或改进IPS方式的边缘场切换(Fringe Field Switching，以下简称FFS)方式。
参照图示说明FFS方式的液晶显示装置的制造步骤。图18至图20是FFS方式的液晶显示装置的一像素的制造步骤图，各图的(a)是显示区域的一部分的平面图，(b)是沿(a)图的A-A线的剖面图。在实际的液晶显示装置的显示区域中，以矩阵状配置有许多个像素，但该图中仅显示三个像素。
如图18所示，在由玻璃衬底等所构成的TFT衬底10上，通过CVD(化学气相沉积，Chemical Vapor Deposition)，将由氧化硅膜(SiO2膜)或氮化硅膜(SiNx膜)构成的缓冲层11、非晶硅层连续成膜。该非晶硅层是通过受激准分子激光·退火处理结晶化而成为多晶硅层。该多晶硅层是被图案化为U字形而形成薄膜晶体管1(以下称TFT)的有源层12。
然后，以覆盖有源层12的方式将栅极绝缘膜13成膜。在与有源层12重叠的栅极绝缘膜13上，形成由铬、钼等构成的栅极线14。栅极线14是在两个部位与有源层12交叉，并沿列方向延伸。对栅极线14施加有控制TFT1的导通开关的栅极信号。另一方面，形成有与栅极线14平行、与栅极线14由同一材料所构成且用以提供共通电位Vcom的共通电极辅助线15。
接着，形成有覆盖TFT1及共通电极辅助线15的层间绝缘膜16。接着，在层间绝缘膜16形成有分别露出有源层12的源极区域12s、漏极区域12d的接触孔CH1、CH2。此外，在层间绝缘膜16形成有露出共通电极辅助线15的接触孔CH3。
接着，形成通过接触孔CH1与源极区域12s连接的源极电极17、及通过接触孔CH2与漏极区域12d连接的显示信号线18，且形成有通过接触孔CH3与共通电极辅助线15连接的垫电极19。源极电极17、显示信号线18及垫电极19是由包含铝或铝合金的金属等所构成。接着，在整面形成平坦化膜20。在平坦化膜20形成有分别露出源极电极17、垫电极19的接触孔CH4、CH5。
然后，如图19所示，形成有通过接触孔CH4连接在源极电极17且延伸在平坦化膜20上的像素电极21。像素电极21由ITO等的第一层透明电极所构成，且通过TFT1施加来自显示信号线18的显示信号Vsig。
然后，如图20所示，形成有用以覆盖像素电极21的绝缘膜22。并且，蚀刻绝缘膜22而形成有露出垫电极19的接触孔CH6。再者，通过绝缘膜22在像素电极21上形成具有多个开缝S的共通电极23。共通电极23由ITO等的第二层透明电极所构成，且通过接触孔CH6与垫电极19相连接。
再者，配置有与TFT衬底10相对向且由玻璃衬底等所构成的对向衬底30。在对向衬底30贴附有偏光板31。而且，在TFT衬底10的背面也贴附有偏光板32。偏光板31、32是以各偏光板的偏光轴相互正交的关系配置。此外，在TFT衬底10与对向衬底30之间封入有液晶40。
上述液晶显示装置是在对像素电极21未施加显示电压的状态(无电压状态)下，形成液晶40的液晶分子的长轴的平均配向方向(以下简称“配向方向”)是成为与偏光板32的偏光轴平行的倾斜。此时，由于穿透液晶40的直线偏光的偏光轴与偏光板31的偏光轴正交，故不会从偏光板31射出。即，显示状态为黑显示。
另一方面，当对像素电极21施加显示电压时，会产生从像素电极21通过开缝S并朝向共通电极23的横方向电场。由平面观看时，该电场是与开缝S的长边方向垂直的电场，液晶分子的配向方向是以沿着该电场的电力线的方式旋转。此时，射入液晶40的直线偏光虽通过双折射形成椭圆偏光，但具有穿透偏光板31的直线偏光成分，此时的显示状态是白色显示。此外，关于FFS方式的液晶显示装置记载在专利文件1、2。
专利文件1：特开2001-183685号公报
专利文件2：特开2002-296611号公报
发明内容
一般而言，因电阻的影响造成对共通电极23的共通电位Vcom的提供不充分时，施加在液晶40的电压会减少，且会产生对比度下降等显示质量的劣化问题。共通电极23由ITO等透明电极所构成，薄膜电阻(sheet resistance)比通常的金属高，因此容易产生显示不良，特别是在液晶面板的尺寸变大时，此问题较为显著。因此，在现有的液晶显示装置中，为了充分地进行对共通电极23提供共通电位Vcom，在显示区域内设置用以提供共通电位Vcom的共通电极辅助线15，并在每像素连接共通电极23与共通电极辅助线15。
然而，在显示区域内设置共通电极辅助线15时，会有该配线部分成为遮光区域而使像素的开口率降低的问题。因此，本发明的目的在于提供一种可充分确保对共通电极提供共通电位，且提升像素的开口率以获得明亮显示的液晶显示装置。
本发明的液晶显示装置，具备：衬底；配置在前述衬底上的显示区域的多个像素；配置在前述显示区域的外周，且提供共通电位的外周共通电位线。各像素具备：像素电极；通过绝缘膜配置在该像素电极上，具有多个开缝，并跨越多个像素而配置的共通电极，前述共通电极的端部连接在前述外周共通电位线。
根据本发明的液晶显示装置，由于将共通电位从配置在显示区域的外周的外周共通电位线提供至共通电极，因此可省去显示区域内的共通电极辅助线并提升像素的开口率。而且，由于横跨多个像素而配置共通电极并与外周共通电位线相连接，因此能以低电阻充分地进行对共通电极提供共通电位。
附图说明
图1是第一实施方式的液晶显示装置的显示区域的一部分的平面图。
图2是沿着图1的X1-X1线的剖面图。
图3是第一实施方式的液晶显示装置的第一配置图。
图4是第一实施方式的液晶显示装置的第二配置图。
图5是第一实施方式的液晶显示装置的第三配置图。
图6是第一实施方式的液晶显示装置的第四配置图。
图7是第一实施方式的液晶显示装置的第五配置图。
图8是第一实施方式的液晶显示装置的第六配置图。
图9是第二实施方式的液晶显示装置的显示区域的一部分的平面图。
图10是沿着图9的X2-X2线的剖面图。
图11是沿着图9的Y1-Y1线的剖面图。
图12是第三实施方式的液晶显示装置的显示区域的一部分的平面图。
图13是沿着图12的X3-X3线的剖面图。
图14是沿着图12的Y2-Y2线的剖面图。
图15是第四实施方式的液晶显示装置的显示区域的一部分的平面图。
图16是沿着图15的X4-X4线的剖面图。
图17是沿着图15的Y3-Y3线的剖面图。
图18是现有的液晶显示装置的构造及制造方法的说明图。
图19是现有的液晶显示装置的构造及制造方法的说明图。
图20是现有的液晶显示装置的构造及制造方法的说明图。
符号说明
1薄膜晶体管(TFT)    1a非晶硅TFT(Si-TFT)
10、100TFT衬底      11缓冲层
12有源层            12s源极区域
12d漏极区域           13、101栅极绝缘膜
14、114栅极线         15共通电极辅助线
16、104层间绝缘膜     17、103源极电极
18、118显示信号线     19垫电极
20平坦化膜            21、21B、121A、121B像素电极
22绝缘膜
23、23A、23B、123A、123B共通电极
30对向衬底            31、32偏光板
40液晶                50外周共通电位线
61显示信号线控制电路
62栅极线控制电路      70显示区域
102非晶硅层           119连接用配线
150外周共通电位线     Vcom共通电位
Vsig显示信号          CH1至CH15接触孔
S开缝
具体实施方式
第一实施方式
参照图示说明本发明第一实施方式的液晶显示装置。图1是液晶显示装置的显示区域的一部分的平面图。图2是沿着图1的X1-X1线的剖面图。在实际的液晶显示装置的显示区域70中，是以矩阵状配置许多个像素，但在这些图中仅显示三个像素。
像素电极21以第一层透明电极形成，在该像素电极21的上层隔着绝缘膜22形成有由第二层透明电极所形成的共通电极23A。再者，在上层的共通电极23A设有多个开缝S。以上各点是与现有例(参照图20)相同，但在本实施方式中，共通电极23A跨越显示区域70的全部像素。共通电极23A的端部连接至配置在显示区域70的外周且用以提供共通电位Vcom的外周共通电位线50。
其连接剖面构造是如图2所示，外周共通电位线50与显示信号线18等在相同的层形成，且由包含铝或铝合金的金属等所构成。外周共通电位线50形成在层间绝缘膜16上，且通过形成在层间绝缘膜16的上层的平坦化膜20及绝缘膜22的接触孔CH7，使上层的共通电极23A连接在外周共通电位线50。外周共通电位线50连接在TFT衬底10上未图示的端子，并通过该端子从TFT衬底10的外部的IC等提供共通电位Vcom。
再者，根据本实施方式的液晶显示装置，并未设置现有例的共通电极辅助线15、垫电极19。因此，像素的开口率会提升。而且，由于共通电极23A以横跨显示区域70的全部像素的方式一体化，且将其端部连接在外周共通电位线50，因此能以低电阻充分地进行对共通电极23A提供共通电位Vcom。
外周共通电位线50在图3的配置例中，沿着矩形的显示区域70的一边，配置在显示区域70的外周。为了以低电阻对共通电极23A提供共通电位Vcom，较佳的是如图4的配置例，沿着对向的两边配置外周共通电位线50，并连接各边的外周共通电位线50与共通电极23A的端部。此时，也可如图5的配置例，沿着邻接的两边配置外周共通电位线50。
为了以低电阻对共通电极23A提供共通电位Vcom，较佳的是如图6的配置例，沿着三边配置，或如图7所示沿着四边配置，并连接各边的外周共通电位线50与共通电极23A的端部。
然而，如图7所示在以外周共通电位线50包围显示区域70的配置中，必须将栅极线14和显示信号线18取出至外周共通电位线50之外。这是由于要分别将栅极线14和显示信号线18连接至信号源。
于是，外周共通电位线50与显示信号线18为相同层时，如图中以虚线包围的部分，为了防止外周共通电位线50与显示信号线18在交叉部的短路，必须局部变更任一的线层以形成桥接。例如，在交叉部中，将显示信号线18变更为与栅极线14同一层。关于栅极线14，由于与外周共通电位线50在不同的层，因此与外周共通电位线50交叉。
为了避免此种桥接与交叉，如图8所示将作为信号源的电路配置在以外周共通电位线50所包围的空间中即可。即，在显示区域70与外周共通电位线50之间的空间中配置用以将显示信号提供至显示信号线18的显示信号线控制电路61、及用以将栅极信号提供至栅极线14的栅极线控制电路62。
第二实施方式
参照图示说明本发明第二实施方式的液晶显示装置。图9是液晶显示装置的显示区域的一部分的平面图。图10是沿着图9的X2-X2线的剖面图。图11是沿着图9的Y1-Y1线的剖面图。在实际的液晶显示装置的显示区域中，以矩阵状配置许多个像素，但在这些图中仅显示三个像素。
本实施方式是使第一实施方式的像素电极21与共通电极23A的上下配置关系反转，共通电极23B以第一层透明电极形成，在该共通电极23B的上层隔着绝缘膜22以第二层透明电极形成像素电极21B。再者，在上层的像素电极21B设有多个开缝S。
在该像素的构成中，也是通过使横方向电场产生在像素电极21B与共通电极23B之间，并控制液晶分子的配向方向，即可获得广视角的液晶显示。
像素电极21B依每像素被分割，且连接至各像素的TFT1的源极电极17。共通电极23B与第一实施方式同样地，横跨显示区域70的全部像素。共通电极23B的端部连接至配置在显示区域70的外周、且用以提供共通电位Vcom的外周共通电位线50。
其连接剖面构造如图10所示，外周共通电位线50与显示信号线18等在相同的层形成，且由包含铝或铝合金的金属等所构成。外周共通电位线50形成在层间绝缘膜16上，且通过形成在层间绝缘膜16的上层的平坦化膜20的接触孔CH8，使共通电极23B连接在外周共通电位线50。外周共通电位线50连接在TFT衬底10上的未图示的端子，并通过该端子从TFT衬底10的外部的IC等提供共通电位Vcom。
关于其它构成，与第一实施方式完全相同。即，外周共通电位线50、共通电极23B的配置可适用图3至图8的配置，且可获得相同的效果。
第三实施方式
参照图示说明本发明第三实施方式的液晶显示装置。在第一、第二实施方式中，像素内的TFT1是有源层由多晶硅所形成的多晶硅TFT，但在本实施方式中取代上述多晶硅TFT而使用有源层由非晶硅所形成的非晶硅TFT 1a(以下，称为aSi-TFT 1a)。
图12是第三实施方式的液晶显示装置的显示区域的一部分的平面图。图13是沿着图12的X3-X3线的剖面图。图14是沿着图12的Y2-Y2线的剖面图。在实际的液晶显示装置的显示区域中，以矩阵状配置许多个像素，但在这些图中仅显示三个像素。
在TFT衬底100上形成有aSi-TFT1a的栅极线114。栅极线114由铬、钼等构成。在除了栅极线114的区域，以条状形成有横跨多个像素而延伸的共通电极123B。共通电极123B由ITO等的第一层透明电极所形成。而且，以覆盖栅极线114、共通电极123B的方式形成栅极绝缘膜101。在栅极绝缘膜101上，以覆盖栅极线114的方式形成有非晶硅层102。再者，与非晶硅层102接触而形成有显示信号线118(漏极电极)和源极电极103。
在整面形成有层间绝缘膜104，且对源极电极103上的层间绝缘膜104局部地进行蚀刻，而形成有接触孔CH12。通过该接触孔CH12而形成有连接在源极电极103的像素电极121B。像素电极121B由ITO等的第二层透明电极所形成，且具有多个开缝S。此外像素电极121B隔着栅极绝缘膜101和层间绝缘膜104形成在共通电极123B上。
在利用该aSi-TFT1a的像素的构成中，也是通过使横方向电场产生在像素电极121B与共通电极123B之间，并控制液晶分子的配向方向，即可获得广视角的液晶显示。
再者，共通电极123B的端部连接至配置在显示区域70的外周、且用以提供共通电位Vcom的外周共通电位线150。其连接剖面构造如图13所示，外周共通电位线150与显示信号线118等在相同的层形成，且由包含铝或铝合金的金属等所构成。外周共通电位线150形成在栅极绝缘膜101上。而且，穿过形成在共通电极123B上的栅极绝缘膜101及层间绝缘膜104的接触孔CH13、形成在外周共通电位线150上的层间绝缘膜104的接触孔CH14，通过以第二层透明电极所构成的连接用配线119，将共通电极123B与外周共通电位线150连接。
外周共通电位线150是连接在TFT衬底100上的未图示的端子，并通过该端子从TFT衬底100的外部的IC等提供共通电位Vcom。
再者，在与TFT衬底100相对向而设有对向衬底、且在TFT衬底100与对向衬底之间封入有液晶等方面，与第一、第二实施方式相同，故省略其详细说明。
根据本实施方式的液晶显示装置，与第一、第二实施方式相同，并未设置共通电极辅助线15、垫电极19。因此，像素的开口率会提升。而且，共通电极123B以横跨显示区域70的全部像素的方式一体化。由于将其端部连接在外周共通电位线150，因此能以低电阻充分地进行对共通电极123B提供共通电位Vcom。此外，外周共通电位线150、共通电极123B的配置同样地可适用图3至图8的配置，且可获得相同的效果。
第四实施方式
参照图示说明本発明第四实施方式的液晶显示装置。图15是该液晶显示装置的显示区域的一部分的平面图。图16是沿着图15的X4-X4线的剖面图。图16是沿着图15的Y3-Y3线的剖面图。在实际的液晶显示装置的显示区域中，以矩阵状配置许多个像素，但在这些图中仅显示三个像素。
本实施方式是使第三实施方式的液晶显示装置的像素电极121B与共通电极123B的上下配置关系反转，像素电极121A以第一层透明电极形成，在该像素电极121A的上层隔着栅极绝缘膜101与层间绝缘膜104以第二层透明电极形成共通电极123A。再者，在上层的共通电极123A设有多个开缝S。
再者，共通电极123A的端部连接至配置在显示区域70的外周、且用以提供共通电位Vcom的外周共通电位线150。其连接剖面构造是如图16所示，外周共通电位线150与显示信号线118等在相同的层形成，且由包含铝或铝合金的金属等所构成。外周共通电位线150形成在栅极绝缘膜101上。而且，通过形成在外周共通电位线150上的层间绝缘膜104的接触孔CH15，将共通电极123A与外周共通电位线150连接。
在第一至第四实施方式的液晶显示装置中，共通电极23A、123A的开缝S形成在一个像素内，但开缝S也可横跨多个像素而连接。且像素电极21B、121B也可为开缝S的一方端部开口的梳齿形状。

Claims (10)

1.一种液晶显示装置，具备：
衬底；
配置在前述衬底上的显示区域的多个像素；
配置在前述显示区域的外周，且被提供有共通电位的外周共通电位线；并且
各像素具备：像素电极；及通过绝缘膜而配置在该像素电极上，且具有多个开缝，并跨越多个像素而配置的共通电极；
前述共通电极的端部连接在前述外周共通电位线。
2.根据权利要求1所述的液晶显示装置，其中，前述外周共通电位线配置在前述开缝的长度方向与外周边所形成的角的夹角较大侧的外周边。
3.根据权利要求1所述的液晶显示装置，其中，前述外周共通电位线包围显示区域，且在前述显示区域与前述外周共通电位线之间的空间配置有对前述像素提供显示信号的显示信号线控制电路、或对前述像素提供栅极信号的栅极线控制电路。
4.根据权利要求1所述的液晶显示装置，其中，前述外周共通电位线与对前述像素提供显示信号的显示信号线为同一层。
5.根据权利要求1所述的液晶显示装置，其中，在前述像素电极连接有像素选择用的薄膜晶体管。
6.一种液晶显示装置，具备：
衬底；
配置在前述衬底上的显示区域的多个像素；
配置在前述显示区域的外周，且被提供有共通电位的外周共通电位线；并且
各像素具备：跨越多个像素而配置的共通电极；及通过绝缘膜而配置在该共通电极上，且具有多个开缝的像素电极；
前述共通电极的端部连接在前述外周共通电位线。
7.根据权利要求6所述的液晶显示装置，其中，前述外周共通电位线配置在前述开缝的长度方向与外周边所形成的角的夹角较大侧的外周边。
8.根据权利要求6所述的液晶显示装置，其中，前述外周共通电位线包围显示区域，且在前述显示区域与前述外周共通电位线之间的空间配置有对前述像素提供显示信号的显示信号线控制电路、或对前述像素提供栅极信号的栅极线控制电路。
9.根据权利要求6所述的液晶显示装置，其中，前述外周共通电位线与对前述像素提供显示信号的显示信号线为同一层。
10.根据权利要求6所述的液晶显示装置，其中，在前述像素电极连接有像素选择用的薄膜晶体管。
CNB2007101392005A 2006-07-27 2007-07-27 液晶显示装置 Active CN100510913C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006204624A JP4449953B2 (ja) 2006-07-27 2006-07-27 液晶表示装置
JP2006204624 2006-07-27

Publications (2)

Publication Number Publication Date
CN101114086A true CN101114086A (zh) 2008-01-30
CN100510913C CN100510913C (zh) 2009-07-08

Family

ID=38985665

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101392005A Active CN100510913C (zh) 2006-07-27 2007-07-27 液晶显示装置

Country Status (5)

Country Link
US (10) US20080024416A1 (zh)
JP (1) JP4449953B2 (zh)
KR (1) KR100884126B1 (zh)
CN (1) CN100510913C (zh)
TW (1) TWI369558B (zh)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101893795A (zh) * 2009-05-20 2010-11-24 株式会社日立显示器 液晶显示装置及其制造方法
CN102033365A (zh) * 2009-10-08 2011-04-27 海帝士科技公司 Ffs模式lcd及其制造方法
CN102129143A (zh) * 2010-12-15 2011-07-20 华映视讯（吴江）有限公司 像素阵列基板及其制造方法
CN103529605A (zh) * 2013-10-29 2014-01-22 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板及显示装置
WO2014084130A1 (ja) * 2012-11-30 2014-06-05 シャープ株式会社 Ｔｆｔ基板
CN103946740A (zh) * 2011-11-25 2014-07-23 夏普株式会社 液晶显示装置
CN104115058A (zh) * 2012-02-15 2014-10-22 夏普株式会社 液晶显示器
CN104201178A (zh) * 2014-08-08 2014-12-10 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN104216183A (zh) * 2014-08-28 2014-12-17 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示装置
CN104280951A (zh) * 2014-09-23 2015-01-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN105204252A (zh) * 2015-09-23 2015-12-30 深超光电（深圳）有限公司 薄膜晶体管阵列基板及液晶显示面板
CN105824160A (zh) * 2015-01-08 2016-08-03 群创光电股份有限公司 显示面板
CN107065342A (zh) * 2015-12-29 2017-08-18 乐金显示有限公司 液晶显示装置
CN107422552A (zh) * 2017-08-16 2017-12-01 京东方科技集团股份有限公司 显示基板以及显示装置
CN108983484A (zh) * 2018-08-06 2018-12-11 深圳市华星光电技术有限公司 一种彩色滤光片及制备方法，显示装置
WO2020133747A1 (zh) * 2018-12-29 2020-07-02 武汉华星光电技术有限公司 一种tft阵列基板
CN111580315A (zh) * 2019-02-15 2020-08-25 夏普株式会社 有源矩阵基板和具备其的液晶显示装置

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4449953B2 (ja) 2006-07-27 2010-04-14 エプソンイメージングデバイス株式会社 液晶表示装置
JP5216204B2 (ja) 2006-10-31 2013-06-19 株式会社半導体エネルギー研究所 液晶表示装置及びその作製方法
JP5275650B2 (ja) * 2008-03-12 2013-08-28 株式会社ジャパンディスプレイウェスト 液晶表示装置
JP2009223245A (ja) 2008-03-19 2009-10-01 Hitachi Displays Ltd 液晶表示装置
JP5348521B2 (ja) 2008-06-27 2013-11-20 株式会社ジャパンディスプレイ 液晶表示パネル
JP5348384B2 (ja) * 2008-10-01 2013-11-20 株式会社ジャパンディスプレイ 液晶表示装置
TWI613489B (zh) 2008-12-03 2018-02-01 半導體能源研究所股份有限公司 液晶顯示裝置
US20120062451A1 (en) * 2009-05-13 2012-03-15 Katsuhiko Morishita Liquid crystal display device
KR102416978B1 (ko) * 2009-07-10 2022-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101891985B1 (ko) * 2010-10-08 2018-08-27 엘지디스플레이 주식회사 액정표시장치
KR101790977B1 (ko) * 2010-10-08 2017-10-26 엘지디스플레이 주식회사 액정표시장치
KR101924473B1 (ko) * 2010-12-28 2018-12-03 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법
KR101870986B1 (ko) * 2011-09-19 2018-06-26 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 제조방법
US9599871B2 (en) 2011-11-18 2017-03-21 Sharp Kabushiki Kaisha Semiconductor device, display device, and method for producing semiconductor device
US9343580B2 (en) 2011-12-05 2016-05-17 Sharp Kabushiki Kaisha Semiconductor device
JP6026433B2 (ja) 2012-01-11 2016-11-16 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
JP5912668B2 (ja) * 2012-03-01 2016-04-27 シャープ株式会社 液晶ディスプレイ
CN102651342B (zh) 2012-03-13 2014-12-17 京东方科技集团股份有限公司 阵列基板及其制造方法
CN102790051B (zh) * 2012-07-27 2014-12-10 北京京东方光电科技有限公司 阵列基板及其制备方法、显示装置
CN102944959B (zh) * 2012-11-20 2014-12-24 京东方科技集团股份有限公司 阵列基板、其制作方法、其测试方法及显示装置
TWI636309B (zh) * 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 液晶顯示裝置及電子裝置
TWI506501B (zh) * 2013-08-30 2015-11-01 Ye Xin Technology Consulting Co Ltd 電子裝置
JP5714679B2 (ja) * 2013-10-17 2015-05-07 株式会社ジャパンディスプレイ 液晶表示装置
WO2015092944A1 (ja) * 2013-12-19 2015-06-25 パナソニック液晶ディスプレイ株式会社 表示装置及び表示装置の製造方法
US9608008B2 (en) 2014-02-21 2017-03-28 Sharp Kabushiki Kaisha Active matrix substrate and method for producing same
US9958720B2 (en) 2014-04-17 2018-05-01 Japan Display Inc. Display device
JP6400935B2 (ja) * 2014-04-17 2018-10-03 株式会社ジャパンディスプレイ 表示装置
TWI567950B (zh) * 2015-01-08 2017-01-21 群創光電股份有限公司 顯示面板
TWI577000B (zh) 2015-01-21 2017-04-01 群創光電股份有限公司 顯示裝置
KR102381082B1 (ko) * 2015-07-31 2022-03-30 엘지디스플레이 주식회사 액정 표시 장치
WO2017026372A1 (ja) 2015-08-10 2017-02-16 シャープ株式会社 アクティブマトリクス基板およびその製造方法、および、インセルタッチパネル型表示装置
TWI564644B (zh) * 2015-08-28 2017-01-01 群創光電股份有限公司 顯示裝置
CN105261621B (zh) * 2015-09-06 2018-01-30 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
US10438841B2 (en) 2015-10-13 2019-10-08 Amorphyx, Inc. Amorphous metal thin film nonlinear resistor
TWI561891B (en) 2016-01-04 2016-12-11 Au Optronics Corp Pixel array substrate
WO2017150443A1 (ja) 2016-03-02 2017-09-08 シャープ株式会社 アクティブマトリクス基板、およびアクティブマトリクス基板を備えた液晶表示装置
CN108780620A (zh) 2016-03-15 2018-11-09 夏普株式会社 有源矩阵基板
US10725336B2 (en) * 2016-05-20 2020-07-28 Sharp Kabushiki Kaisha Liquid crystal display panel and liquid crystal display device
CN105807523B (zh) 2016-05-27 2020-03-20 厦门天马微电子有限公司 阵列基板、包含其的显示面板和显示装置
TW201743118A (zh) 2016-06-08 2017-12-16 群創光電股份有限公司 顯示面板
WO2018030298A1 (ja) 2016-08-12 2018-02-15 シャープ株式会社 アクティブマトリクス基板および表示装置
CN109661701A (zh) 2016-09-01 2019-04-19 夏普株式会社 有源矩阵基板和显示装置
US10777587B2 (en) 2016-09-02 2020-09-15 Sharp Kabushiki Kaisha Active matrix substrate and display device provided with active matrix substrate
WO2018043426A1 (ja) 2016-09-05 2018-03-08 シャープ株式会社 アクティブマトリクス基板およびその製造方法
CN106502012A (zh) * 2017-01-03 2017-03-15 深圳市华星光电技术有限公司 Ffs模式的阵列基板及其制作方法
US10725352B2 (en) 2017-01-27 2020-07-28 Sharp Kabushiki Kaisha Active matrix substrate and display device using same
CN110291644B (zh) 2017-02-15 2022-11-01 夏普株式会社 有源矩阵基板
US10991725B2 (en) 2017-03-09 2021-04-27 Sharp Kabushiki Kaisha Active matrix substrate and method for producing same
US11302718B2 (en) 2017-05-18 2022-04-12 Sharp Kabushiki Kaisha Active matrix substrate and production method therefor
CN107302665B (zh) * 2017-08-18 2020-07-24 联想(北京)有限公司 一种摄像装置、光圈调节方法和电子设备
JP2019049590A (ja) 2017-09-08 2019-03-28 シャープ株式会社 アクティブマトリクス基板およびデマルチプレクサ回路
JP2019050323A (ja) 2017-09-12 2019-03-28 シャープ株式会社 アクティブマトリクス基板およびデマルチプレクサ回路
JP7066445B2 (ja) * 2018-02-20 2022-05-13 株式会社ジャパンディスプレイ 表示装置
JP6496433B2 (ja) * 2018-02-27 2019-04-03 株式会社半導体エネルギー研究所 液晶表示装置
JP6706638B2 (ja) 2018-03-07 2020-06-10 シャープ株式会社 半導体装置およびその製造方法
KR20200130466A (ko) * 2018-03-30 2020-11-18 아모르픽스, 인크 비정질 금속 박막 트랜지스터
JP6799123B2 (ja) 2018-09-19 2020-12-09 シャープ株式会社 アクティブマトリクス基板およびその製造方法
WO2020065866A1 (ja) * 2018-09-27 2020-04-02 シャープ株式会社 表示装置
CN109521613A (zh) * 2018-12-24 2019-03-26 上海天马微电子有限公司 一种阵列基板、其制作方法、显示面板及显示装置
JP7471075B2 (ja) 2019-12-17 2024-04-19 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US11557679B2 (en) * 2020-03-02 2023-01-17 Sharp Kabushiki Kaisha Active matrix substrate and display device
CN111983862B (zh) * 2020-08-19 2022-07-12 武汉华星光电技术有限公司 阵列基板、阵列基板制作方法及液晶显示面板
JP2023036194A (ja) * 2021-09-02 2023-03-14 株式会社ジャパンディスプレイ 表示装置
CN115437187B (zh) 2022-11-09 2023-03-24 惠科股份有限公司 阵列基板和显示面板

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW354380B (en) * 1995-03-17 1999-03-11 Hitachi Ltd A liquid crystal device with a wide visual angle
US6078318A (en) * 1995-04-27 2000-06-20 Canon Kabushiki Kaisha Data transfer method, display driving circuit using the method, and image display apparatus
JP3582193B2 (ja) 1995-12-08 2004-10-27 カシオ計算機株式会社 液晶表示素子
US5852485A (en) * 1996-02-27 1998-12-22 Sharp Kabushiki Kaisha Liquid crystal display device and method for producing the same
JP3170446B2 (ja) 1996-02-27 2001-05-28 シャープ株式会社 アクティブマトリクス基板及び液晶表示装置
JPH10133234A (ja) 1996-09-04 1998-05-22 Toshiba Corp 液晶表示装置
US20020075422A1 (en) * 1996-09-19 2002-06-20 Seiko Epson Corporation Matrix type display device and manufacturing method thereof
US6532053B2 (en) * 1996-12-18 2003-03-11 Hitachi, Ltd. Transverse electric field system liquid crystal display device suitable for improving aperture ratio
JPH10186351A (ja) 1996-12-24 1998-07-14 Hitachi Ltd 液晶表示装置
JP4024901B2 (ja) * 1997-05-22 2007-12-19 エルジー フィリップス エルシーディー カンパニー リミテッド アクティブマトリックス型液晶表示装置
KR100251512B1 (ko) * 1997-07-12 2000-04-15 구본준 횡전계방식 액정표시장치
KR100280874B1 (ko) 1997-09-12 2001-02-01 구본준 액정패널
JP3831863B2 (ja) * 1997-10-21 2006-10-11 大林精工株式会社 液晶表示装置
EP2189839A1 (en) * 1997-10-31 2010-05-26 Seiko Epson Corporation Electrooptical apparatus and electronic device
CN1173216C (zh) * 1997-11-03 2004-10-27 三星电子株式会社 具有改变的电极排列的液晶显示器
JPH11326928A (ja) * 1998-05-08 1999-11-26 Hitachi Ltd 液晶表示装置
JP3766563B2 (ja) 1999-05-17 2006-04-12 株式会社日立製作所 液晶表示装置
JP3481509B2 (ja) * 1999-06-16 2003-12-22 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置
JP2001083546A (ja) * 1999-07-12 2001-03-30 Hitachi Ltd 液晶表示装置
TW457384B (en) * 1999-09-13 2001-10-01 Ind Tech Res Inst Electrode structure for a wide viewing angle liquid crystal display
US6927824B1 (en) * 1999-09-16 2005-08-09 Fujitsu Display Technologies Corporation Liquid crystal display device and thin film transistor substrate
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
JP2001102169A (ja) * 1999-10-01 2001-04-13 Sanyo Electric Co Ltd Ｅｌ表示装置
JP3379491B2 (ja) * 1999-10-22 2003-02-24 日本電気株式会社 液晶表示装置
JP3687452B2 (ja) 1999-12-27 2005-08-24 株式会社日立製作所 液晶表示装置
JP3832261B2 (ja) 2000-03-16 2006-10-11 セイコーエプソン株式会社 液晶装置、投射型表示装置及び電子機器
JP2001272697A (ja) 2000-03-23 2001-10-05 Hitachi Ltd 液晶表示装置
US6500701B2 (en) * 2000-04-28 2002-12-31 Casio Computer Co., Ltd. Method of manufacturing thin film transistor panel having protective film of channel region
KR100633315B1 (ko) * 2000-06-01 2006-10-11 엘지.필립스 엘시디 주식회사 축적용량방식용 액정표시장치의 공통전극 배선과,횡전계모드용 액정표시장치의 스토리지전극 배선의 구조
JP2001354968A (ja) 2000-06-09 2001-12-25 Hitachi Ltd アクティブ・マトリクス型液晶表示装置およびその液晶組成物質
JP4446577B2 (ja) * 2000-09-06 2010-04-07 エーユー オプトロニクス コーポレイション 表示パネル、表示装置
KR100601454B1 (ko) 2000-10-04 2006-07-14 엘지.필립스 엘시디 주식회사 멀티 도메인 액정표시장치 및 그 제조방법
US6784966B2 (en) * 2001-03-06 2004-08-31 Seiko Epson Corp. Liquid crystal device, projection type display and electronic equipment
JP4556341B2 (ja) 2001-03-30 2010-10-06 セイコーエプソン株式会社 液晶表示装置および電子機器
JP3618302B2 (ja) 2001-04-10 2005-02-09 松下電器産業株式会社 液晶パネルの検査法及び検査装置
JP4041336B2 (ja) * 2001-06-29 2008-01-30 シャープ株式会社 液晶表示装置用基板及びそれを備えた液晶表示装置及びその製造方法
JP4353660B2 (ja) 2001-07-27 2009-10-28 三洋電機株式会社 アクティブマトリクス型表示装置
JP2003090994A (ja) 2001-09-19 2003-03-28 Hitachi Ltd 液晶表示装置
JP3909572B2 (ja) * 2001-09-28 2007-04-25 株式会社日立製作所 表示装置
US6778229B2 (en) * 2001-10-02 2004-08-17 Fujitsu Display Technologies Corporation Liquid crystal display device and method of fabricating the same
JP4305811B2 (ja) * 2001-10-15 2009-07-29 株式会社日立製作所 液晶表示装置、画像表示装置およびその製造方法
JP2003131248A (ja) 2001-10-25 2003-05-08 Seiko Epson Corp 液晶表示装置および液晶表示装置の製造方法並びに液晶表示装置用基板、電子機器
KR100652046B1 (ko) * 2001-12-22 2006-11-30 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100450701B1 (ko) * 2001-12-28 2004-10-01 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP3920649B2 (ja) 2002-01-31 2007-05-30 株式会社日立製作所 画像表示装置および液晶表示装置
US7102726B2 (en) * 2002-03-15 2006-09-05 Lg. Philips Lcd Co., Ltd. System for fabricating liquid crystal display and method of fabricating liquid crystal display using the same
JP2003295207A (ja) 2002-03-29 2003-10-15 Nec Lcd Technologies Ltd 横電界方式のアクティブマトリクス型液晶表示装置
JP4005410B2 (ja) 2002-05-15 2007-11-07 株式会社 日立ディスプレイズ 画像表示装置
JP3778176B2 (ja) * 2002-05-28 2006-05-24 セイコーエプソン株式会社 発光装置および電子機器
JP4085170B2 (ja) * 2002-06-06 2008-05-14 株式会社 日立ディスプレイズ 液晶表示装置
JP3700714B2 (ja) * 2002-06-21 2005-09-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4145637B2 (ja) 2002-11-25 2008-09-03 シャープ株式会社 アクティブマトリクス基板及び表示装置
US6762815B2 (en) * 2002-12-12 2004-07-13 Hannstar Display Corp. In-plane switching LCD with a redundancy structure for an opened common electrode and a high storage capacitance
KR100911470B1 (ko) 2003-01-30 2009-08-11 삼성전자주식회사 액정표시장치
KR100741890B1 (ko) * 2003-06-26 2007-07-23 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정표시장치 및 그의 제조방법
KR101085150B1 (ko) 2003-06-28 2011-11-18 엘지디스플레이 주식회사 횡전계 방식의 액정표시장치 및 그의 제조방법
TW594177B (en) 2003-07-23 2004-06-21 Hannstar Display Corp Liquid crystal display panel for eliminating flicker
JP2005070541A (ja) 2003-08-26 2005-03-17 Seiko Epson Corp 液晶表示装置及び携帯型電子機器
KR101007206B1 (ko) 2003-12-11 2011-01-12 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치 및 그 제조방법
CN1627146A (zh) * 2003-12-13 2005-06-15 鸿富锦精密工业（深圳）有限公司 边缘电场开关型液晶显示装置
KR100640212B1 (ko) * 2003-12-16 2006-10-31 엘지.필립스 엘시디 주식회사 공통전극의 접속이 강화된 횡전계방식 액정표시패널 및 그 제조방법
KR20050067735A (ko) * 2003-12-29 2005-07-05 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정표시장치
US7372513B2 (en) * 2003-12-30 2008-05-13 Lg.Philips Lcd Co., Ltd. Liquid crystal display device and method for fabricating the same
KR100710164B1 (ko) * 2003-12-30 2007-04-20 엘지.필립스 엘시디 주식회사 횡전계 방식 액정 표시 장치
JP4011557B2 (ja) 2004-03-25 2007-11-21 三菱電機株式会社 液晶表示装置および液晶表示装置の製造方法
JP4462981B2 (ja) 2004-03-29 2010-05-12 Ｎｅｃ液晶テクノロジー株式会社 アクティブマトリクス基板及び該基板を備える液晶表示装置
JP4627148B2 (ja) * 2004-04-09 2011-02-09 株式会社 日立ディスプレイズ 表示装置
JP4230425B2 (ja) 2004-07-26 2009-02-25 シャープ株式会社 カラーフィルタ基板、および表示装置
KR100590932B1 (ko) * 2004-09-23 2006-06-19 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정표시장치
KR100583138B1 (ko) * 2004-10-08 2006-05-23 삼성에스디아이 주식회사 발광 표시장치
KR101085136B1 (ko) * 2004-12-04 2011-11-18 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
KR100719922B1 (ko) * 2005-03-03 2007-05-18 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정표시장치
US7710739B2 (en) * 2005-04-28 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR101159318B1 (ko) * 2005-05-31 2012-06-22 엘지디스플레이 주식회사 액정 표시 장치
JP4400588B2 (ja) 2005-06-02 2010-01-20 エプソンイメージングデバイス株式会社 電気光学装置、電気光学装置の駆動方法、および、電子機器
KR20070010618A (ko) 2005-07-19 2007-01-24 삼성전자주식회사 표시 장치 및 박막 트랜지스터 표시판
JP4827499B2 (ja) 2005-11-16 2011-11-30 キヤノン株式会社 電流駆動型装置及び表示装置
KR101201068B1 (ko) * 2005-12-20 2012-11-14 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조방법
KR101177593B1 (ko) * 2005-12-29 2012-08-27 엘지디스플레이 주식회사 액정표시장치
EP2026121B1 (en) * 2006-05-19 2010-10-27 Sharp Kabushiki Kaisha Display device
JP4884846B2 (ja) * 2006-05-31 2012-02-29 株式会社 日立ディスプレイズ 液晶表示装置
JP4449953B2 (ja) * 2006-07-27 2010-04-14 エプソンイメージングデバイス株式会社 液晶表示装置
JP5191639B2 (ja) * 2006-09-15 2013-05-08 株式会社ジャパンディスプレイイースト 液晶表示装置
US8681305B2 (en) * 2008-12-24 2014-03-25 Lg Display Co., Ltd. Liquid crystal display device comprising a common line pattern formed correspond to the conductive seal pattern, a transparent electrode pattern overlapping the common line pattern with an insulating layer interposed there between, the transparent electrode pattern having a width equal to or less than that of the common line pattern
JP5013554B2 (ja) 2010-03-31 2012-08-29 株式会社ジャパンディスプレイセントラル 液晶表示装置

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101893795B (zh) * 2009-05-20 2014-05-07 株式会社日本显示器 液晶显示装置及其制造方法
US8730442B2 (en) 2009-05-20 2014-05-20 Japan Display Inc. Liquid crystal display device and manufacturing method thereof
CN101893795A (zh) * 2009-05-20 2010-11-24 株式会社日立显示器 液晶显示装置及其制造方法
CN102033365A (zh) * 2009-10-08 2011-04-27 海帝士科技公司 Ffs模式lcd及其制造方法
CN102129143A (zh) * 2010-12-15 2011-07-20 华映视讯（吴江）有限公司 像素阵列基板及其制造方法
CN103946740A (zh) * 2011-11-25 2014-07-23 夏普株式会社 液晶显示装置
CN103946740B (zh) * 2011-11-25 2016-11-09 夏普株式会社 液晶显示装置
CN104115058B (zh) * 2012-02-15 2016-11-02 夏普株式会社 液晶显示器
CN104115058A (zh) * 2012-02-15 2014-10-22 夏普株式会社 液晶显示器
CN104813386A (zh) * 2012-11-30 2015-07-29 夏普株式会社 Tft基板
WO2014084130A1 (ja) * 2012-11-30 2014-06-05 シャープ株式会社 Ｔｆｔ基板
CN104813386B (zh) * 2012-11-30 2017-05-31 夏普株式会社 Tft基板
CN103529605A (zh) * 2013-10-29 2014-01-22 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板及显示装置
CN104201178B (zh) * 2014-08-08 2017-04-05 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN104201178A (zh) * 2014-08-08 2014-12-10 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
US9865623B2 (en) 2014-08-28 2018-01-09 Boe Technology Group Co., Ltd. Array substrate and manufacturing method thereof, and display device
CN104216183A (zh) * 2014-08-28 2014-12-17 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示装置
CN104280951A (zh) * 2014-09-23 2015-01-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN105824160A (zh) * 2015-01-08 2016-08-03 群创光电股份有限公司 显示面板
CN105824160B (zh) * 2015-01-08 2020-06-16 群创光电股份有限公司 显示面板
CN111665669A (zh) * 2015-01-08 2020-09-15 群创光电股份有限公司 显示面板
CN105204252A (zh) * 2015-09-23 2015-12-30 深超光电（深圳）有限公司 薄膜晶体管阵列基板及液晶显示面板
CN107065342B (zh) * 2015-12-29 2020-09-08 乐金显示有限公司 液晶显示装置
CN107065342A (zh) * 2015-12-29 2017-08-18 乐金显示有限公司 液晶显示装置
CN107422552A (zh) * 2017-08-16 2017-12-01 京东方科技集团股份有限公司 显示基板以及显示装置
CN107422552B (zh) * 2017-08-16 2020-03-27 京东方科技集团股份有限公司 显示基板以及显示装置
CN108983484A (zh) * 2018-08-06 2018-12-11 深圳市华星光电技术有限公司 一种彩色滤光片及制备方法，显示装置
WO2020133747A1 (zh) * 2018-12-29 2020-07-02 武汉华星光电技术有限公司 一种tft阵列基板
CN111580315A (zh) * 2019-02-15 2020-08-25 夏普株式会社 有源矩阵基板和具备其的液晶显示装置
CN111580315B (zh) * 2019-02-15 2023-04-04 夏普株式会社 有源矩阵基板和具备其的液晶显示装置

Also Published As

Publication number Publication date
KR100884126B1 (ko) 2009-02-17
US20160231628A1 (en) 2016-08-11
US9291863B2 (en) 2016-03-22
US20210026207A1 (en) 2021-01-28
US20160266453A1 (en) 2016-09-15
US20190346724A1 (en) 2019-11-14
US20120313845A1 (en) 2012-12-13
US10126609B2 (en) 2018-11-13
US10606133B2 (en) 2020-03-31
CN100510913C (zh) 2009-07-08
US11143923B2 (en) 2021-10-12
US10802353B2 (en) 2020-10-13
US10126608B2 (en) 2018-11-13
US20190346725A1 (en) 2019-11-14
TW200807122A (en) 2008-02-01
US20200379305A1 (en) 2020-12-03
US11698555B2 (en) 2023-07-11
JP2008032899A (ja) 2008-02-14
US20170146873A1 (en) 2017-05-25
JP4449953B2 (ja) 2010-04-14
US20230280619A1 (en) 2023-09-07
KR20080011085A (ko) 2008-01-31
US9946125B2 (en) 2018-04-17
US20080024416A1 (en) 2008-01-31
TWI369558B (en) 2012-08-01
US11543708B2 (en) 2023-01-03
US20190049800A1 (en) 2019-02-14

Similar Documents

Publication Publication Date Title
CN100510913C (zh) 液晶显示装置
JP4356750B2 (ja) 液晶表示装置及びその製造方法
KR101049001B1 (ko) 횡전계 방식(ｉｐｓ)의 컬러필터 온박막트랜지스터(ｃｏｔ) 구조의 액정표시장치
US7440040B2 (en) Liquid crystal display device with storage electrode extension
US8054398B2 (en) Liquid crystal display and panel therefor
KR100719423B1 (ko) 액티브 매트릭스 기판 및 표시 장치
JPH0736058A (ja) アクティブマトリックス型液晶表示装置
CN100451782C (zh) 液晶显示器装置、液晶显示器装置的面板及其制造方法
JP2008003118A (ja) 電気光学装置、電子機器、および電気光学装置の製造方法
JP2005301226A (ja) 液晶表示装置及びこれに使用する表示板
US7220992B2 (en) Thin film transistor array panel and a liquid crystal display including the same
KR20090033809A (ko) 액정 표시 장치 및 전자 기기
JP2006317867A (ja) 薄膜トランジスタ基板及び液晶表示パネル
CN102043273B (zh) 常黑模式液晶显示器装置
JP2000330123A (ja) 液晶表示装置
JP2006215086A (ja) アクティブマトリクス基板およびそれを備えた表示装置
JP2007093859A (ja) 液晶装置および電子機器
KR20080047085A (ko) 액정표시장치용 어레이 기판 및 그 제조방법
CN115831978A (zh) 阵列基板及其制备方法、显示面板
KR100303440B1 (ko) 평면구동방식의액정표시장치
JP3300336B2 (ja) 液晶表示装置
KR20020050021A (ko) 액정 표시 장치용 어레이 기판 및 그의 제조 방법
JP2000194012A (ja) 薄膜トランジスタマトリクスの製造方法と薄膜トランジスタマトリクス
JP2002090775A (ja) マトリクスアレイ基板
JP2003177417A (ja) 液晶表示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: NANKAI UNIVERSITY

Free format text: FORMER OWNER: SANYO EPSON IMAGING DEVICES CO.

Effective date: 20100727

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: NAGANO PREFECTURE, JAPAN TO: TOKYO, JAPAN

TR01 Transfer of patent right

Effective date of registration: 20100727

Address after: Tokyo, Japan

Patentee after: Sony Corp.

Address before: Nagano

Patentee before: Sanyo Epson Imaging Devices Co.

ASS Succession or assignment of patent right

Owner name: NIPPON DISPLAY CO., LTD.

Free format text: FORMER OWNER: SONY CORPORATION

Effective date: 20121122

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121122

Address after: Aichi

Patentee after: Japan display West Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Sony Corp.

TR01 Transfer of patent right

Effective date of registration: 20211025

Address after: Tokyo, Japan

Patentee after: JAPAN DISPLAY Inc.

Address before: Aichi

Patentee before: Japan display West Co.,Ltd.

TR01 Transfer of patent right