TWI707969B - 用於含金屬材料的高壓退火過程 - Google Patents

用於含金屬材料的高壓退火過程 Download PDF

Info

Publication number
TWI707969B
TWI707969B TW108104585A TW108104585A TWI707969B TW I707969 B TWI707969 B TW I707969B TW 108104585 A TW108104585 A TW 108104585A TW 108104585 A TW108104585 A TW 108104585A TW I707969 B TWI707969 B TW I707969B
Authority
TW
Taiwan
Prior art keywords
metal
layer
containing layer
substrate
bar
Prior art date
Application number
TW108104585A
Other languages
English (en)
Other versions
TW201945570A (zh
Inventor
卡沙爾Ｋ 辛格
美伊 雪克
史林尼法斯Ｄ 奈馬尼
怡利 葉
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201945570A publication Critical patent/TW201945570A/zh
Application granted granted Critical
Publication of TWI707969B publication Critical patent/TWI707969B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/447—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of pressure, e.g. thermo-compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

本揭示內容提供了用於在TFT顯示應用、半導體、或記憶體應用中在含金屬層上執行退火過程的方法。在一個實例中，一種在基板上形成含金屬層的方法包括以下步驟：在處理腔室中的基板上供應含氧氣體混合物，該基板包括設置在光學透明基板上的含金屬層；將該處理腔室中的該含氧氣體混合物維持在約2巴到約50巴之間的過程壓力下；及在該含氧氣體混合物存在的情況下熱退火該含金屬層。

Description

用於含金屬材料的高壓退火過程
本發明的實施例大致與用於在可以利用在TFT設備結構、半導體、或記憶體應用中的膜堆疊中形成含金屬層的方法相關。
顯示設備已經被廣泛地用於範圍廣泛的電子應用，例如TV、監視器、手機、MP3播放器、電子書閱讀器、及個人數位助理（PDA）等等。顯示設備一般被設計為用於藉由向液晶施加電場來產生所需的影像，該液晶填充兩個基板之間的間隙且具有控制介電場強度的各向異性的介電常數。藉由調整透射通過基板的光的量，可以高效地控制光及影像的強度、品質、及功率消耗。
可以將各種不同的顯示設備（例如有源矩陣液晶顯示器（AMLCD）或有源矩陣有機發光二極體（AMOLED））採用為利用觸控螢幕面板的顯示設備的光源。在製造TFT設備時，具有高電子遷移率、低洩漏電流、及高擊穿電壓的電子設備會允許更多像素面積用於光透射及電路系統的整合，因此造成更亮的顯像、更高的整體電效率、更快速的響應時間、及更高解析度的顯像。形成於設備中的低膜品質的材料層（例如具有雜質的金屬電極層）通常造成了不良的設備電氣效能及短的設備使用壽命。因此，對於提供具有低的膜洩漏的設備結構，用於在TFT設備中形成膜層及將膜層與TFT設備整合在一起的穩定及可靠的方法變得至關重要，且需要高的擊穿電壓以供用於製造具有較低臨限電壓偏移的電子設備及改善電子設備的整體效能。
因此，需要改善的材料以用於製造產生改善的設備電氣效能及設備穩定性的TFT設備。
本揭示內容提供了用於在TFT顯示應用、半導體、或電阻式隨機存取記憶體（ReRAM）中在含金屬層上執行退火過程的方法。在一個實例中，一種在基板上形成含金屬層的方法包括以下步驟：在處理腔室中的基板上供應含氧氣體混合物，該基板包括設置在光學透明基板上的含金屬層；將該處理腔室中的該含氧氣體混合物維持在2巴到50巴之間的過程壓力下；及在該含氧氣體混合物存在的情況下熱退火該含金屬層。
在另一個實例中，一種用於緻密化設置在基板上的含金屬層的方法包括以下步驟：在大於2巴的壓力下熱處理設置在光學透明基板上的含金屬層；及在熱處理介電層的期間將基板溫度維持小於攝氏500度。
在又另一個實例中，一種用於緻密化設置在基板上的含金屬層的方法包括以下步驟：在基板上形成含金屬層；將摻雜物植入到該含金屬層中；及在大於2巴的壓力下熱處理該基板上的該含金屬層，同時將基板溫度維持小於攝氏500度。
本揭示內容的實施例大致提供了一種TFT設備結構及在該TFT設備結構中的源極、汲極、介面、及接觸區域的有源層上執行熱退火過程以便增強顯示設備的電氣效能的方法。其他的應用（包括半導體或記憶體設備製造過程）也可以利用本文中所述的實施例。熱退火過程可以緻密化基板上的金屬電極、源極/汲極及/或接觸區域、及/或膜層的有源層膜性質。在一個實例中，熱處理過程被執行以提供含金屬層的熱能，例如含金屬層（例如有源層）或金屬電極層（例如金屬閘極電極、源極-汲極及/或接觸區域或電極層、或其他合適的金屬結構）形成於TFT設備中。熱退火過程可以緻密化或最小化有源層膜結構中的氧缺乏，以向設備結構提供良好的品質、介面管理、及熱穩定。熱退火過程也可以增加含金屬材料的結晶度，而改善含金屬層的電氣效能。因此，顯示設備中的源極/汲極及/或接觸區域的金屬電極及有源層所需的膜性質可以高效地增強電晶體及二極體設備的電氣效能。
圖1是用於單個基板的高壓退火過程的單基板處理腔室100的簡化正橫截面圖。單基板處理腔室100具有主體110，該主體具有包封內部容積115的外表面112及內表面113。在例如圖1中的一些實施例中，主體110具有環狀橫截面，然而在其他的實施例中，主體110的橫截面可以是矩形或任何封閉的形狀。可以由抗腐蝕鋼（CRS）（例如但不限於不銹鋼）製作主體110的外表面112。一或更多個隔熱罩125被設置在主體110的內表面113上，該隔熱罩防止來自單基板處理腔室100的熱損失進入外部環境。可以由鎳基鋼合金製作主體110的內表面113以及隔熱罩125，該等鎳基鋼合金展現高度的腐蝕抗性，例如但不限於HASTELLOY® 、ICONEL® 、及MONEL® 。
基板支撐物130被設置在內部容積115內。基板支撐物130具有桿134及由桿134所固持的基板支撐構件132。桿134穿過形成通過腔室主體110的通路122。連接到致動器138的桿139穿過形成通過腔室主體110的第二通路123。桿139被耦接到具有孔136的板135，該孔容納基板支撐物130的桿134。升降銷137被連接到基板支撐構件132。致動器138致動桿139，使得板135上下移動以與升降銷137連接及斷接。隨著升降銷137升高或降低，基板支撐構件132在腔室100的內部容積115內升高或降低。基板支撐構件132具有嵌入在中心內的電阻式加熱元件131。電源133被配置為向電阻式加熱元件131供電。電源133以及致動器138的操作被控制器180控制。
單基板處理腔室100在主體110上具有開口111，通過該開口，可以向及從設置在內部容積115中的基板支撐物130裝載及卸載一或更多個基板120。開口111在主體110上形成隧道121。縫閥128被配置為可密封地封閉隧道121，使得只有在縫閥128開啟時才能夠進出開口111及內部容積115。高壓密封件127被用來將縫閥128密封到主體110，以密封內部容積115以供進行處理。可以由聚合物製作高壓密封件127，例如含氟聚合物，例如但不限於全氟彈性體及聚四氟乙烯（PTFE）。高壓密封件127可以更包括彈簧構件以供偏壓密封件以改善密封效能。冷卻通道124被設置在隧道121上在高壓密封件127附近，以在處理期間將高壓密封件127維持低於高壓密封件127的最大安全操作溫度。可以將來自冷卻流體源126的冷卻劑（例如但不限於惰性、介電、及高效能導熱流體）在冷卻通道124內循環。來自冷卻流體源126的冷卻劑的流量是藉由控制器180通過從溫度感測器116或流量感測器（未示出）所接收的反饋來控制的。環狀熱扼流圈129圍繞隧道221而形成以防止來自內部容積115的熱在縫閥128開啟時流過開口111。
單基板處理腔室100具有通過主體110的端口117，該端口被流體連接到流體迴路190，該流體迴路連接氣體面板150、冷凝器160、及端口117。流體迴路190具有導氣管192、來源導管157、入口隔離閥155、排氣導管163、及出口隔離閥165。許多加熱器196、158、152、154、164、166與流體迴路190的不同部分交接。許多溫度感測器151、153、119、167、及169也被安置在流體迴路190的不同部分處，以截取溫度量度及向控制器180發送資訊。控制器180使用溫度測量資訊來控制加熱器152、154、158、196、164、及166的操作，使得流體迴路190的溫度被維持在高於設置在流體迴路190及內部容積115中的處理流體的冷凝點的溫度。
氣體面板150被配置為在內部容積115的壓力之下提供處理流體。引入到內部容積115中的處理流體的壓力被耦接到主體110的壓力感測器114監測。冷凝器160被流體耦接到冷卻流體源（未示出）且被配置為冷凝通過導氣管192離開內部容積115的氣相處理流體。冷凝的處理流體接著被泵176移除。一或更多個加熱器140被設置在主體110上且被配置為加熱單基板處理腔室100內的內部容積115。加熱器140、152、154、158、196、164、及166在通往冷凝器160的出口隔離閥165開啟的同時將流體迴路190內的處理流體維持在氣相下，以防止流體迴路內的冷凝。
控制器180控制單基板處理腔室100的操作。控制器180控制氣體面板150、冷凝器160、泵170、入口隔離閥155、出口隔離閥165、電源133及145的操作。控制器180也被通訊連接到溫度感測器116、壓力感測器114、致動器138、冷卻流體源126、及溫度讀數設備156及162。
處理流體可以包括含氧的及/或含氮的氣體、及/或硫族或碲（例如S、Se、Te）氣體或蒸氣，例如氧氣、乾蒸汽、水、過氧化氫、氨、S蒸氣、Se蒸氣、H2 S、H2 Se等等。處理流體可以與基板上的金屬材料起反應以形成金屬氮氧化物、金屬氧化物、金屬氧硫族元素化物、或金屬硫族化物。替代於或附加於含氧的及/或含氮的氣體，處理流體可以包括含矽氣體。含矽氣體的實例包括有機矽、正矽酸四烷基酯氣體及二矽氧烷。有機矽氣體包括具有至少一種碳-矽鍵的有機化合物的氣體。正矽酸四烷基酯氣體包括由附接到SiO4 4 − 離子的四個烷基組成的氣體。更特定而言，該一或更多種氣體可以是(二甲基甲矽烷基)(三甲基甲矽烷基)甲烷（(Me)3 SiCH2 SiH(Me)2 ）、六甲基二矽烷（(Me)3 SiSi(Me)3 ）、三甲基矽烷（(Me)3 SiH）、三甲基甲矽烷基氯（(Me)3 SiCl）、四甲基矽烷（(Me)4 Si）、四乙氧基矽烷（(EtO)4 Si）、四甲氧基矽烷（(MeO)4 Si）、四(三甲基甲矽烷基)矽烷（(Me3 Si)4 Si）、(二甲基胺基)二甲基矽烷（(Me2 N)SiHMe2 ）、二甲基二乙氧基矽烷（(EtO)2 Si(Me)2 ）、二甲基二甲氧基矽烷（(MeO)2 Si(Me)2 ）、甲基三甲氧基矽烷（(MeO)3 Si(Me)）、二甲氧基四甲基二矽氧烷（((Me)2 Si(OMe))2 O）、三(二甲基胺基)矽烷（(Me2 N)3 SiH）、雙(二甲基胺基)甲基矽烷（(Me2 N)2 CH3 SiH）、二矽氧烷（(SiH3 )2 O）、及上述項目的組合。
在基板120的處理期間，高壓區域115的環境被維持在將高壓區域內的處理流體維持在氣相的溫度及壓力下。此類壓力及溫度是基於處理流體的組成來選定的。在蒸氣的情況下，溫度及壓力被保持在將蒸氣維持在乾蒸氣狀態的條件下。在一個實例中，高壓區域115被加壓到大於大氣的壓力，例如大於約2巴。在另一個實例中，高壓區域115被加壓到從約10到約50巴（例如從約20到約50巴之間）的壓力。在另一個實例中，高壓區域115被加壓到高達100巴的壓力。在處理期間，高壓區域115也被維持在高溫下，例如超過攝氏225度的溫度（由設置在輸送盒150上的基板155的熱預算所限制），例如在約攝氏300度到約攝氏500度之間。
圖2是示例性處理系統200的示意俯視平面圖，該處理系統包括併入及整合在該處理系統中的處理腔室（例如圖1中所繪示的處理腔室100）中的一或更多者。在一個實施例中，處理系統200可以是可從位於加州聖克拉拉市的應用材料公司購得的Centura® 或Endura® 集成處理系統。預期的是，可以將其他的處理系統（包括來自其他製造商的彼等處理系統）調適為受益於本揭示內容。
系統200包括真空氣密處理平台204、工廠介面202、及系統控制器244。平台204包括複數個處理腔室100、212、232、228、220（例如圖1中所描繪的處理腔室100中的該處理腔室）、及耦接到真空基板傳輸腔室236的至少一個裝載閘腔室222。圖2中示出了兩個裝載閘腔室222。工廠介面202被裝載閘腔室222耦接到傳輸腔室236。
在一個實施例中，工廠介面202包括至少一個對接站208及至少一個工廠介面機器人214以促進基板的傳輸。對接站208被配置為接受一或更多個前開式晶圓傳送盒（FOUP）。圖2的實施例中示出了兩個FOUP 206A-B。具有設置在機器人214的一端上的葉片216的工廠介面機器人214被配置為從工廠介面202向處理平台204傳輸基板以供通過裝載閘腔室222進行處理。可選地，可以將一或更多個度量站518連接到工廠介面202的終端226以促進測量來自FOUP 206A-B的基板。
裝載閘腔室222中的每一者具有耦接到工廠介面202的第一端口及耦接到傳輸腔室236的第二端口。裝載閘腔室222被耦接到壓力控制系統（未示出），該壓力控制系統將裝載閘腔室222抽空及通氣以促進在傳輸腔室236的真空環境與工廠介面202的實質周圍（例如大氣）環境之間傳遞基板。
傳輸腔室236具有設置在其中的真空機器人230。真空機器人230具有葉片234，該葉片能夠在裝載閘腔室222、度量系統210、及處理腔室212、232、228、220之中傳輸基板224。
在系統200的一個實施例中，系統200可以包括一或更多個處理腔室100、212、232、228、220，該一或更多個處理腔室可以是退火腔室（例如高壓退火腔室、RTP腔室、雷射退火腔室）、沉積腔室、蝕刻腔室、清潔腔室、固化腔室、或其他類似類型的半導體處理腔室。在系統200的一些實施例中，處理腔室100、212、232、228、220、傳輸腔室236、工廠介面202、及/或裝載閘腔室222中的至少一者中的一或更多者。
系統控制器244被耦接到處理系統200。系統控制器244（它可以包括計算設備201或被包括在計算設備201內）使用系統200的處理腔室100、212、232、228、220的直接控制來控制處理系統200的操作。或者，系統控制器244可以控制與處理腔室100、212、232、228、及系統200相關聯的電腦（或控制器）。操作時，系統控制器244也允許來自各別腔室的資料收集及反饋以最佳化系統200的效能。
與上述的計算設備201非常相似，系統控制器244一般包括中央處理單元（CPU）238、記憶體240、及支援電路242。CPU 238可以是可以用在工業環境中的任何形式的一般用途電腦處理器中的一者。支援電路242常規上被耦接到CPU 238，且可以包括快取記憶體、時脈電路、輸入/輸出子系統、電源等等。軟體常式將CPU 238轉換成特定用途電腦（控制器）244。也可以由定位在系統200遠端的第二控制器（未示出）儲存及/或執行軟體常式。
圖3描繪TFT設備350的實例，該TFT設備包括含金屬層，該含金屬層可以在高壓退火腔室中經歷熱退火過程，例如圖1中所描繪的高壓退火過程100，可以將該高壓退火腔室合併到圖2中所描繪的系統200中。薄膜電晶體設備結構350是設置在基板301上的底部閘極TFT結構。注意，基板301可以具有先前形成在該基板上的膜、結構、或層的不同組合以促進在基板301上形成不同的設備結構或不同的膜堆疊。在一個實例中，基板301可以具有形成於該基板上的設備結構350，如圖3中所示。或者，基板301可以具有設置於該基板上另一種設備結構450，如圖4中進一步示出，將在下文進一步描述該設備結構。基板301可以是玻璃基板、塑膠基板、聚合物基板、金屬基板、單個基板、卷對卷基板、或用於在其上形成薄膜電晶體的其他合適的透明基板中的任一者。
閘極電極層302被形成及圖案化在基板301上，之後是閘極絕緣層304。在一個實施例中，可以由任何合適的金屬材料製造閘極電極層302，例如鋁（Al）、鎢（W）、鉻（Cr）、鉭（Ta）、鉬（Mo）、銅（Cu）、或上述項目的組合。閘極絕緣體304的合適材料包括氧化矽（SiO2 ）、氮氧化矽（SiON）、氮化矽（SiN）等等。注意，圖3中所描繪的薄膜電晶體設備結構350是底部閘極設備結構，其中閘極電極層302被形成於設備結構350的底部上。
有源層306被形成於閘極絕緣層304上。用於有源層306的材料可以選自具有高電子遷移率且適用於低溫製造的透明金屬氧化物材料，這允許在不損傷基板的情況下在低溫下處理柔性基板材料（例如塑膠材料）。可以用於有源層306的材料的合適實例包括a-IGZO（非晶銦鎵鋅氧化物）、InGaZnON、ZnO、ZnON、ZnSnO、CdSnO、GaSnO、TiSnO、CuBO2 、CuAlO2 、CuGaO2 、SrCuO、LaCuOS、GaN、InGaN、AlGaN、或InGaAlN等等。
在形成有源層306之後，可以將屏障層308形成於有源層306上。可以由含金屬材料形成屏障層308，以便向後續形成於該屏障層上的金屬電極層310（例如針對源極-汲極電極）提供良好的介面黏著以及良好的屏障性質（例如擴散屏障）。可以將屏障層308圖案化為在有源層306上形成所需的圖案以促進在後續的蝕刻過程中將特徵轉移在設置在基板301上的膜層上。儘管如圖3中所描繪的屏障層308被圖案化為所需的圖案，但注意，屏障層308可以呈現任何形式，依需要包括設備結構350中的整個連續空白膜或任何不同的特徵，只要屏障層308可以高效地提供阻擋/擴散屏障性質以防止來自有源層306的元素擴散到金屬電極層310中，反之亦然。在一個實施例中，屏障層308可以是由金屬介電層（例如依需要是Ta2 O5 或TiO2 或任何合適的金屬介電層）製造的單層的含金屬介電層，如圖3中所描繪。在另一個實施例中，屏障層308可以依需要呈現複合膜的形式。
在金屬電極層310（例如源極-汲極金屬電極層）被設置在屏障層308上方之後，隨後，執行蝕刻過程以在金屬電極層310中形成通道320。在蝕刻之後，絕緣材料層314（例如鈍化層）接著被形成在金屬電極層310上方以完成形成薄膜電晶體設備結構350的過程。
在一個實施例中，可以用作金屬電極層310的材料的實例包括銅（Cu）、金、銀（Ag）、鋁（Al）、鎢（W）、鉬（Mo）、鉻（Cr）、鉭（Ta）、上述項目的合金、及上述項目的組合。可以用作絕緣材料層314的合適材料包括氧化矽（SiO2 ）、氮氧化矽（SiON）、或氮化矽（SiN）等等。
圖4描繪可以形成於基板301上的頂部閘極低溫多晶矽（LTPS）TFT設備結構450的實例，而不是圖3中所描繪的底部閘極設備結構350。LTPS TFT設備450是建造有有源層452的MOS設備，該等有源層包括形成於光學透明基板301上的源極區域409a、通道區域408、及汲極區域409b（例如，或稱為金屬接觸區域或源極-汲極金屬觸點），其中將或不將可選的絕緣層404設置在該光學透明基板上。在一個實例中，可以由透明的含金屬層（例如金屬氧化物材料）製造包括源極區域409a、通道區域408、及汲極區域409b的有源層，該透明的含金屬層具有高的電子遷移率及適於低溫製造，這允許在不損傷基板的情況下在低溫下處理柔性基板材料（例如塑膠材料）。可以用於源極區域409a、通道區域408、及汲極區域409b的此類材料的合適實例包括a-IGZO（非晶銦鎵鋅氧化物）、摻雜的IGZO、InGaZnON、ZnO、ZnON、ZnSnO、CdSnO、GaSnO、TiSnO、CuBO2 、CuAlO2 、CuGaO2 、SrCuO、LaCuOS、GaN、InGaN、AlGaN、或InGaAlN等等。
閘極絕緣層406接著被沉積於沉積的多晶矽層的頂部上，以將設置在該閘極絕緣層上的屏障層411及金屬電極層414（例如閘極電極）與通道區域408、源極區域409a、及汲極區域409b隔離。可以由含金屬材料形成屏障層411，以便向後續形成於該屏障層上的金屬電極層414（例如，閘極電極）提供良好的介面黏著以及良好的屏障性質（例如擴散屏障）。可以將屏障層411圖案化為在閘極絕緣層406上形成所需的圖案以促進在後續的蝕刻過程中將特徵轉移在設置在基板102上的膜層上。屏障層411可以高效地提供阻擋/擴散屏障性質，以防止來自閘極絕緣層406的元素擴散到金屬電極層414中，反之亦然。在一個實施例中，屏障層411可以是由金屬介電層（例如依需要是Ta2 O5 或TiO2 或任何合適的金屬介電層）製造的單層的含金屬介電層，如圖4中所描繪。在另一個實施例中，屏障層411可以依需要呈現複合膜的形式。
閘極電極層414被形成於閘極絕緣層406的頂部上，其中屏障層411介於其間。閘極絕緣層406通常也稱為閘極氧化物層，因為它通常是由二氧化矽（SiO2 ）層製作的。絕緣材料層412（例如層間絕緣體）及設備連接件（未示出）接著被製作通過絕緣材料層412以允許控制TFT設備。
在絕緣材料層412形成之後，源極-汲極金屬電極層410a、410b接著被沉積、形成、及圖案化在絕緣材料層412中。在源極-汲極金屬電極層410a、410b被圖案化之後，鈍化層418接著被形成在源極-汲極金屬電極層410a、410b上方。
圖5描繪分別在含金屬層（例如分別在圖3-4中的有源層306、452、或分別在圖3-4中的金屬電極302、310、410a、410b、414）上執行的熱退火過程500的一個實例的流程圖。
方法500藉由提供基板（例如圖3及4中的基板301）開始於操作502處。基板301可以是光學透明基板。基板301可以包括設置在其上的材料層601，如圖6A中所示。材料層601可以是可以用來形成TFT設備結構的單個層或多個層。或者，材料層601可以是可以包括可以用來形成TFT設備結構的多種材料的結構。
基板301更包括形成於材料層601上的含金屬層602，如圖6B中所示。在不存在材料層601的實例中，可以將含金屬層602直接形成於基板301上。在一些實例中，可以將含金屬層602用作圖3或4中的有源層306、452、或圖3-4中的金屬電極302、310、410a、410b、414。在一個實例中，含金屬層602是選自由以下項目所組成的群組的金屬氧化物層：a-IGZO（非晶銦鎵鋅氧化物）、摻雜的IGZO、InGaZnON、ZnO、ZnON、ZnSnO、CdSnO、GaSnO、TiSnO、CuBO2 、CuAlO2 、CuGaO2 、SrCuO、LaCuOS、GaN、InGaN、AlGaN、或InGaAlN等等。在一個實例中，含金屬層602是IGZO或摻雜的IGZO層。或者，含金屬層602可以是金屬層，例如銅（Cu）、金、銀（Ag）、鋁（Al）、鎢（W）、鉬（Mo）、鉻（Cr）、鉭（Ta）、上述項目的合金等等。
在操作504處，執行可選的離子摻雜/植入過程以將離子植入到含金屬層602中，而形成摻雜的含金屬層610，如圖6C中所示。在離子植入過程被消除的實例中，可以直接在含金屬層602上執行操作506處的熱退火過程（下文將更詳細地描述）。離子摻雜/植入過程被執行為在含金屬層602的某些位置上進行摻雜、塗覆、處理、植入、安插、或更改某些膜/表面性質，其中摻雜物形成於該含金屬層中而形成摻雜的含金屬層610。離子摻雜/植入過程利用入射的離子來更改含金屬層602上的膜/表面性質，其中摻雜物被摻雜到該含金屬層以形成摻雜的含金屬層610。可以在任何合適的離子植入/摻雜處理工具中執行離子摻雜/植入過程。可以用所需的濃度將包括所需類型的原子的離子摻雜到含金屬層602中。摻雜到含金屬層602中的離子可以更改含金屬層602的膜/表面性質，這可以影響、改善、或變更含金屬層602的晶格結構、結晶度、鍵合結構、或膜密度，而形成摻雜的含金屬層610。
在含金屬層602包括InGaZnO的實施例中，摻雜到含金屬層602中的離子可以包括銦（In）或鉬（Mo）、鎵（Ga）、鋅（Zn）等等。據信，摻雜到含金屬層602（例如InGaZnO）中的In或Mo摻雜物可以變更InGaZnO材料的電氣性質，例如高遷移率、結晶度（例如來自非晶結構、C軸對準的晶體結構（CAAC）、多晶結構、或甚至單晶結構），因此提供了具有所需膜性質的摻雜的含金屬層610。例如，由InGaZnO材料中的In或Mo摻雜物所提供的較高程度的結晶度據信增加了膜性質的電子遷移率，因此在TFT設備結構或半導體設備中利用摻雜的含金屬層610時增強了TFT設備結構或半導體設備的電氣效能。
並且，也據信，包括在InGaZnO材料中的鎵（Ga）及氧化鋅（ZnO）比率也可以影響摻雜的含金屬層610的生成的晶格結構。據信，包括在InGaZnO材料中的Ga元素的比率可以增加膜透明度以及整體的膜帶隙。包括在InGaZnO材料中的Zn或ZnO元素的比率可以增加遷移率以及減小增強結晶度的熱退火溫度需求。因此，藉由選定摻雜到InGaZnO材料中的適當劑量的In摻雜物，可以獲得所需的InGaZnO材料晶體。並且，所需的InGaZnO材料晶體也可以幫助減小之後的操作506處的熱退火過程中的溫度需求，而在TFT設備應用中提供了過程優勢，因為基板301通常是具有相對低的熱循環預算的光學透明材料。
在一個實施例中，InGaZnO材料中的生成的In摻雜物可以具有形成於摻雜的含金屬層610中的在約5E15離子數/cm2 到約9E15離子數/cm2 之間（例如約8.5E15離子數/cm2 ）的摻雜濃度。並且，可以將InGaZnO材料中的In或Mo元素的用原子量計的比率從約10%-13%增加到約14%-16%（在約15%到約30%之間的增加）。
可以在離子摻雜/植入過程期間控制幾個過程參數。可以藉由以下步驟來執行離子摻雜/植入過程：將離子摻雜氣體混合物以及所需的功率能量的量供應到離子摻雜/植入工具中以將來自離子摻雜氣體混合物的離子摻雜到基板301中。可以用在約10 sccm到約1000 sccm之間的流速將離子摻雜氣體混合物供應到離子摻雜/植入工具中。用於在植入期間在所使用的離子摻雜操作中用氣態供應的合適元素包括銦蒸氣及鉬蒸氣。可以將RF電力（例如電容式或感應式RF電力）、DC電力、電磁能、離子束、或磁控濺射供應到離子摻雜/植入過程中以協助在處理期間解離離子摻雜氣體混合物。可以使用藉由向基板支撐物或向基板支撐物上方的氣體入口或向該基板支撐物及該氣體入口施加DC或RF電偏壓產生的電場將由解離能所產生的離子朝向基板加速。在一些實施例中，含氣體的高能離子可以是電漿。可以使用在約20 keV到約80 keV之間（例如在約35 keV到約55 keV之間，例如約45 keV）的能量來將離子植入到含金屬層602中。可以將基板溫度控制在約攝氏5度到約攝氏50度之間，例如約攝氏15度。
在操作506處，執行高壓退火過程。在高過程壓力（例如大於2巴但小於）下執行的退火過程可以協助緻密化及修復摻雜的含金屬層610中的空位，而形成具有所需的膜性質的退火的含金屬層603，如圖6D中所示。在一些實例中，高的過程壓力可以高達100巴。在不執行操作504處的離子摻雜/植入過程的實施例中，可以直接在來自圖6B的含金屬層602上執行高壓退火過程以形成退火的含金屬層603，如圖6D中所示。可以在處理腔室（例如圖1中所描繪的處理腔室100）或其他合適的處理腔室（包括一次處理一個基板的彼等處理腔室）處執行退火過程。
在操作506處執行的高壓退火過程將高壓區域處的處理壓力維持在氣相（例如實質上不存在液滴的乾氣相）下。處理壓力及溫度被控制為緻密化膜結構，以便修復膜缺陷，而驅除雜質及增加膜密度。在一個實例中，高壓區域115被加壓到大於大氣的壓力，例如大於約2巴。在另一個實例中，高壓區域115被加壓到從約5到約100巴的壓力，例如從約5到約50巴，例如約35巴。因為高壓可以高效地協助緻密化膜結構，相對低的處理溫度（例如小於攝氏500度）減小了熱循環損傷基板301的可能性。
在處理期間，高壓區域115被設置在外腔室110內的加熱器122維持在相對低的溫度下，例如小於攝氏500度的溫度，例如在約攝氏150度到約攝氏350度之間。因此，可以藉由利用高壓退火過程以及低溫方案來獲得低的基板熱預算。
據信，高壓過程可以提供驅動力以驅除含金屬層602或摻雜的含金屬層610中的懸鍵，因此在退火過程期間使含金屬層602中的懸鍵修復、反應、及飽和。在一個實例中，可以在退火過程期間供應含氧氣體（例如O3 氣體、O2 氣體、空氣、H2 O、H2 O2 、N2 O、NO2 、CO2 、CO、及乾蒸氣）、或硫族蒸氣（包括硫（S）蒸氣及硒（Se）蒸氣）、或碲蒸氣、或其他合適的氣體。在一個具體實例中，含氧氣體包括蒸氣，例如乾蒸氣及/或空氣。可以將在退火過程期間來自含氧氣體的氧元素驅動到含金屬層602中，而變更其中的鍵合結構及移除原子空位，因此緻密化及增強了含金屬層602的晶格結構及增加了該含金屬層的結晶度。在一些實例中，可以與含氧氣體一起供應惰性氣體或載體氣體（例如Ar、N2 、He、Kr等等）。在一個實施例中，在含氧氣體混合物中供應的含氧氣體是在大於2巴的壓力下供應的乾蒸氣。
在一個示例性的實施方式中，過程壓力被調節在大於2巴的壓力下，例如在5巴到100巴之間，例如在20巴到約80巴之間，例如在約25巴到75巴之間，例如約35巴。可以將過程溫度控制在大於攝氏150度但小於攝氏500度，例如在約攝氏150度到約攝氏380度之間，例如在約攝氏180度到約攝氏400度之間。在一個實例中，可以在用於金屬氧硫族元素（例如包括S或Se的InGaZnO）的退火過程期間供應硫族蒸氣（例如硫（S）蒸氣、硒（Se）蒸氣）。
在高壓下的退火過程之後，與藉由一個大氣壓力左右的壓力下的常規退火過程來退火的含金屬層602或摻雜的含金屬層610相比，含金屬層602或摻雜的含金屬層610具有緻密化的膜結構，這提供了具有非晶形態的相對強健的膜結構，該膜結構提供了更高的膜密度、高的膜遷移率、低的載體濃度、及低的膜電阻率，其中兩種退火過程都處於相同的退火溫度。在一個實例中，與1大氣壓力下且相同退火溫度下的常規退火過程相比，具有銦摻雜物的高壓退火的含金屬層603（由摻雜的含金屬層610所形成）的遷移率增加了約5倍到約20倍之間，電阻率增加了約10倍，且載體濃度減小了約100倍。
在一個實例中，與1大氣壓力下且相同退火溫度下的常規退火過程相比，不具有銦摻雜物的高壓退火的含金屬層603（由含金屬層602所形成）的遷移率增加了約1.5倍到約5倍之間，電阻率增加了約20百分比到約99百分比，且載體濃度減小了約100倍。
因此，提供了用於熱退火含金屬層的方法。可以藉由具有高過程壓力（例如大於2巴但小於50巴）的高壓退火過程來熱處理/退火含金屬層。藉由利用此類高壓退火過程，可以將過程溫度維持小於攝氏500度，因此減小了貢獻給其上形成有含金屬層的基板的熱預算，而提供了具有所需的結晶度及結構整合管理的良好膜品質。
儘管上文是針對本發明的實施例，但可以設計本發明的其他的及另外的實施例而不脫離本發明的基本範圍，且本發明的範圍是由隨後的申請專利範圍所決定的。
100‧‧‧單基板處理腔室 110‧‧‧主體 111‧‧‧開口 112‧‧‧外表面 113‧‧‧內表面 114‧‧‧壓力感測器 115‧‧‧內部容積 116‧‧‧溫度感測器 117‧‧‧端口 119‧‧‧溫度感測器 122‧‧‧加熱器 130‧‧‧基板支撐物 131‧‧‧電阻式加熱元件 132‧‧‧基板支撐構件 133‧‧‧電源 134‧‧‧桿 135‧‧‧板 136‧‧‧孔 137‧‧‧升降銷 138‧‧‧致動器 139‧‧‧桿 140‧‧‧加熱器 145‧‧‧電源 150‧‧‧氣體面板 151‧‧‧溫度感測器 152‧‧‧加熱器 153‧‧‧溫度感測器 154‧‧‧加熱器 155‧‧‧入口隔離閥 156‧‧‧溫度讀數設備 157‧‧‧來源導管 158‧‧‧加熱器 160‧‧‧冷凝器 162‧‧‧溫度讀數設備 163‧‧‧排氣導管 164‧‧‧加熱器 165‧‧‧出口隔離閥 166‧‧‧加熱器 167‧‧‧溫度感測器 169‧‧‧溫度感測器 170‧‧‧泵 176‧‧‧泵 180‧‧‧控制器 190‧‧‧流體迴路 192‧‧‧導氣管 196‧‧‧加熱器 200‧‧‧處理系統 201‧‧‧計算設備 202‧‧‧工廠介面 204‧‧‧真空氣密處理平台 206A‧‧‧FOUP 206B‧‧‧FOUP 208‧‧‧對接站 212‧‧‧處理腔室 214‧‧‧工廠介面機器人 216‧‧‧葉片 220‧‧‧處理腔室 222‧‧‧裝載閘腔室 224‧‧‧基板 226‧‧‧終端 228‧‧‧處理腔室 230‧‧‧真空機器人 232‧‧‧處理腔室 234‧‧‧葉片 236‧‧‧真空基板傳輸腔室 238‧‧‧CPU 240‧‧‧記憶體 242‧‧‧支援電路 244‧‧‧系統控制器 301‧‧‧基板 302‧‧‧金屬電極 304‧‧‧閘極絕緣體 306‧‧‧有源層 308‧‧‧屏障層 310‧‧‧金屬電極 314‧‧‧絕緣材料層 320‧‧‧通道 350‧‧‧設備結構 404‧‧‧絕緣層 406‧‧‧閘極絕緣層 408‧‧‧通道區域 409a‧‧‧源極區域 409b‧‧‧汲極區域 410a‧‧‧金屬電極 410b‧‧‧金屬電極 411‧‧‧屏障層 412‧‧‧絕緣材料層 414‧‧‧金屬電極 418‧‧‧鈍化層 450‧‧‧設備結構 500‧‧‧熱退火過程 502‧‧‧操作 504‧‧‧操作 506‧‧‧操作 508‧‧‧操作 601‧‧‧材料層 602‧‧‧含金屬層 603‧‧‧退火的含金屬層 610‧‧‧摻雜的含金屬層
可以藉由參照實施例來獲得可以用來詳細瞭解上文所載的本發明特徵的方式及上文簡要概述的本發明的更特定描述，該等實施例中的一些被繪示在附圖中。然而，應注意，附圖僅繪示此發明的典型實施例且因此不要將其視為此發明的範圍限制，因為本發明可以容許其他同等有效的實施例。
圖1是依據一些實施例的處理腔室的簡化正橫截面圖，該處理腔室具有設置在其中的輸送盒；
圖2是群集系統，可以將圖1的處理腔室合併到該群集系統；
圖3是薄膜電晶體設備結構的一個實例的截面圖；及
圖4是薄膜電晶體設備結構的另一個實例的截面圖。
圖5描繪依據一些實施例的在含金屬材料中執行的退火過程的流程圖；
圖6A-6D描繪依據一些實施例的圖5的用於將含金屬材料熱退火的序列的一個實施例。
為了促進了解，已經儘可能使用相同的參考標號（例如類似退火條件下的大氣壓力下的退火）來標定圖式共有的相同元件。所預期的是，可以在不另外重述的情況下有益地將一個實施例的元件及特徵併入其他實施例。
然而，要注意，附圖僅繪示此發明的示例性實施例，且因此不要將該等附圖視為此發明的範圍的限制，因為本發明可以容許其他同等有效的實施例。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100‧‧‧單基板處理腔室
110‧‧‧主體
111‧‧‧開口
112‧‧‧外表面
113‧‧‧內表面
114‧‧‧壓力感測器
115‧‧‧內部容積
116‧‧‧溫度感測器
117‧‧‧端口
119‧‧‧溫度感測器
122‧‧‧加熱器
130‧‧‧基板支撐物
131‧‧‧電阻式加熱元件
132‧‧‧基板支撐構件
133‧‧‧電源
134‧‧‧桿
135‧‧‧板
136‧‧‧孔
137‧‧‧升降銷
138‧‧‧致動器
139‧‧‧桿
140‧‧‧加熱器
145‧‧‧電源
150‧‧‧氣體面板
151‧‧‧溫度感測器
152‧‧‧加熱器
153‧‧‧溫度感測器
154‧‧‧加熱器
155‧‧‧入口隔離閥
156‧‧‧溫度讀數設備
157‧‧‧來源導管
158‧‧‧加熱器
160‧‧‧冷凝器
162‧‧‧溫度讀數設備
163‧‧‧排氣導管
164‧‧‧加熱器
165‧‧‧出口隔離閥
166‧‧‧加熱器
167‧‧‧溫度感測器
169‧‧‧溫度感測器
170‧‧‧泵
176‧‧‧泵
180‧‧‧控制器
190‧‧‧流體迴路
192‧‧‧導氣管
196‧‧‧加熱器

Claims (15)

  1. 一種在一基板上形成一含金屬層的方法，該方法包括以下步驟：在一處理腔室中的一基板上供應一含氧氣體混合物，該基板包括設置在一光學透明基板上的一含金屬層；將該處理腔室中的該含氧氣體混合物維持在2巴到50巴之間的一過程壓力下；及在一基板溫度下在該含氧氣體混合物存在的情況下熱退火該含金屬層，其中：該含氧氣體混合物包括一含氧氣體、及一惰性氣體或一載體氣體，該含金屬層是一金屬氧化物層或一金屬層，該金屬氧化物層選自由以下項目所組成的一群組：a-IGZO(非晶銦鎵鋅氧化物)、摻雜的IGZO、InGaZnON、ZnO、ZnON、ZnSnO、CdSnO、GaSnO、TiSnO、CuBO2、CuAlO2、CuGaO2、SrCuO、LaCuOS、GaN、InGaN、AlGaN、及InGaAlN，該金屬層選自由以下項目所組成的一群組：鋁(Al)、鎢(W)、鉻(Cr)、鉭(Ta)、鉬(Mo)、銅(Cu)、上述項目的合金、及上述項目的組合，及 在該熱退火步驟之後，與藉由在1大氣壓力下且在與該基板溫度相同的溫度下進行的一退火過程來退火的該含金屬層的遷移率相比，該含金屬層的遷移率增加了約1.5倍到20倍之間。
  2. 如請求項1所述的方法，其中供應該含氧氣體混合物的步驟更包括以下步驟：將該基板溫度維持小於攝氏400度。
  3. 如請求項1所述的方法，其中該含氧氣體選自由以下項目所組成的一群組：O3氣體、O2氣體、H2O、H2O2、N2O、NO2、CO2、CO、空氣、乾蒸氣。
  4. 如請求項1所述的方法，其中含氧氣體混合物包括乾蒸氣或空氣。
  5. 如請求項1所述的方法，其中該過程壓力是在約5巴到100巴之間。
  6. 如請求項1所述的方法，更包括以下步驟：在供應該含氧氣體混合物之前將摻雜物植入到該含金屬層中。
  7. 如請求項6所述的方法，其中植入到該含金屬層中的該等摻雜物包括銦或鉬。
  8. 如請求項7所述的方法，其中植入到該含金屬層中的該等摻雜物增加了該含金屬層的結晶度。
  9. 如請求項1所述的方法，其中該含金屬層是一TFT設備結構中的一有源層。
  10. 如請求項1所述的方法，其中該金屬氧化物層是InGaZnON。
  11. 如請求項1所述的方法，其中該含金屬層是一TFT設備結構中的一電極。
  12. 如請求項1所述的方法，其中該含金屬層在該熱退火步驟之後具有較高的一膜密度。
  13. 一種用於緻密化設置在一基板上的一含金屬層的方法，該方法包括以下步驟：在2巴到50巴之間的一壓力下熱處理設置在一光學透明基板上的一含金屬層；及在熱處理該含金屬層的期間將一基板溫度維持小於攝氏500度，其中：該含金屬層是一金屬氧化物層或一金屬層，該金屬氧化物層選自由以下項目所組成的一群組：a-IGZO(非晶銦鎵鋅氧化物)、摻雜的IGZO、InGaZnON、ZnO、ZnON、ZnSnO、CdSnO、GaSnO、TiSnO、CuBO2、CuAlO2、CuGaO2、SrCuO、LaCuOS、GaN、InGaN、AlGaN、及InGaAlN， 該金屬層選自由以下項目所組成的一群組：鋁(Al)、鎢(W)、鉻(Cr)、鉭(Ta)、鉬(Mo)、銅(Cu)、上述項目的合金、及上述項目的組合，及在該熱處理步驟之後，與藉由在1大氣壓力下且在與該基板溫度相同的溫度下進行的一熱處理過程來退火的該含金屬層的遷移率相比，該含金屬層的遷移率增加了約1.5倍到20倍之間。
  14. 如請求項13所述的方法，更包括以下步驟：在熱處理該含金屬層的同時向該含金屬層供應乾蒸氣、空氣、硫族蒸氣、或碲蒸氣。
  15. 一種用於緻密化設置在一基板上的一含金屬層的方法，該方法包括以下步驟：在一基板上形成一含金屬層；將摻雜物植入到該含金屬層中；及在2巴到50巴之間的一壓力下熱處理該基板上的該含金屬層，同時將一基板溫度維持小於攝氏500度，其中：該含金屬層是一金屬氧化物層或一金屬層，該金屬氧化物層選自由以下項目所組成的一群組：a-IGZO(非晶銦鎵鋅氧化物)、摻雜的IGZO、InGaZnON、ZnO、ZnON、ZnSnO、CdSnO、GaSnO、TiSnO、CuBO2、CuAlO2、CuGaO2、 SrCuO、LaCuOS、GaN、InGaN、AlGaN、及InGaAlN，該金屬層選自由以下項目所組成的一群組：鋁(Al)、鎢(W)、鉻(Cr)、鉭(Ta)、鉬(Mo)、銅(Cu)、上述項目的合金、及上述項目的組合，及在該熱處理步驟之後，與藉由在1大氣壓力下且在與該基板溫度相同的溫度下進行的一熱處理過程來退火的該含金屬層的遷移率相比，該含金屬層的遷移率增加了約1.5倍到20倍之間。
TW108104585A 2018-03-09 2019-02-12 用於含金屬材料的高壓退火過程 TWI707969B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862641110P 2018-03-09 2018-03-09
US62/641,110 2018-03-09

Publications (2)

Publication Number Publication Date
TW201945570A TW201945570A (zh) 2019-12-01
TWI707969B true TWI707969B (zh) 2020-10-21

Family

ID=67842028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108104585A TWI707969B (zh) 2018-03-09 2019-02-12 用於含金屬材料的高壓退火過程

Country Status (8)

Country Link
US (2) US10998200B2 (zh)
EP (1) EP3762962A4 (zh)
JP (1) JP7239598B2 (zh)
KR (2) KR102702244B1 (zh)
CN (1) CN111902929A (zh)
SG (1) SG11202008256WA (zh)
TW (1) TWI707969B (zh)
WO (1) WO2019173006A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) * 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
CN111095524B (zh) 2017-09-12 2023-10-03 应用材料公司 用于使用保护阻挡物层制造半导体结构的设备和方法
JP7112490B2 (ja) 2017-11-11 2022-08-03 マイクロマテリアルズ エルエルシー 高圧処理チャンバのためのガス供給システム
KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
WO2020092002A1 (en) 2018-10-30 2020-05-07 Applied Materials, Inc. Methods for etching a structure for semiconductor applications
KR20210077779A (ko) 2018-11-16 2021-06-25 어플라이드 머티어리얼스, 인코포레이티드 강화된 확산 프로세스를 사용한 막 증착
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
KR20240018513A (ko) * 2021-06-09 2024-02-13 와틀로 일렉트릭 매뉴팩츄어링 컴파니 차가운 도관 절연 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239291A1 (en) * 2013-02-27 2014-08-28 Inha-Industry Partnership Institute Metal-oxide semiconductor thin film transistors and methods of manufacturing the same
US20150091009A1 (en) * 2008-07-31 2015-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (611)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US4524587A (en) 1967-01-10 1985-06-25 Kantor Frederick W Rotary thermodynamic apparatus and method
US3684592A (en) 1969-09-30 1972-08-15 Westinghouse Electric Corp Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same
US3758316A (en) 1971-03-30 1973-09-11 Du Pont Refractory materials and process for making same
US3749383A (en) 1971-04-29 1973-07-31 Rca Corp Apparatus for processing semiconductor devices
US4409260A (en) 1979-08-15 1983-10-11 Hughes Aircraft Company Process for low-temperature surface layer oxidation of a semiconductor substrate
US4424101A (en) 1980-11-06 1984-01-03 The Perkin-Elmer Corp. Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques
US4589193A (en) 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same
US4576652A (en) 1984-07-12 1986-03-18 International Business Machines Corporation Incoherent light annealing of gallium arsenide substrate
JPS634616A (ja) 1986-06-25 1988-01-09 Hitachi Tokyo Electron Co Ltd 蒸気処理装置
JPS6367721A (ja) 1986-09-09 1988-03-26 Meidensha Electric Mfg Co Ltd アモルフアス炭素半導体膜の製造方法
JPH0748489B2 (ja) 1987-07-27 1995-05-24 富士通株式会社 プラズマ処理装置
US4879259A (en) 1987-09-28 1989-11-07 The Board Of Trustees Of The Leland Stanford Junion University Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
CA1308496C (en) 1988-02-18 1992-10-06 Rajiv V. Joshi Deposition of tungsten on silicon in a non-self-limiting cvd process
US5114513A (en) 1988-10-27 1992-05-19 Omron Tateisi Electronics Co. Optical device and manufacturing method thereof
US5167717A (en) 1989-02-15 1992-12-01 Charles Boitnott Apparatus and method for processing a semiconductor wafer
JP2730695B2 (ja) 1989-04-10 1998-03-25 忠弘 大見 タングステン膜の成膜装置
US5126117A (en) 1990-05-22 1992-06-30 Custom Engineered Materials, Inc. Device for preventing accidental releases of hazardous gases
US5175123A (en) 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
US5050540A (en) 1991-01-29 1991-09-24 Arne Lindberg Method of gas blanketing a boiler
JP2996524B2 (ja) 1991-03-18 2000-01-11 松下電子工業株式会社 ポリイミド硬化装置
US5314541A (en) 1991-05-28 1994-05-24 Tokyo Electron Limited Reduced pressure processing system and reduced pressure processing method
DE69233222T2 (de) 1991-05-28 2004-08-26 Trikon Technologies Ltd., Thornbury Verfahren zum Füllen eines Hohlraumes in einem Substrat
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
JPH0521310A (ja) 1991-07-11 1993-01-29 Canon Inc 微細パタン形成方法
JPH0521347A (ja) 1991-07-11 1993-01-29 Canon Inc スパツタリング装置
JPH05129296A (ja) 1991-11-05 1993-05-25 Fujitsu Ltd 導電膜の平坦化方法
US5300320A (en) 1992-06-23 1994-04-05 President And Fellows Of Harvard College Chemical vapor deposition from single organometallic precursors
US5319212A (en) 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
JPH06283496A (ja) 1993-03-26 1994-10-07 Dainippon Screen Mfg Co Ltd 洗浄処理後の基板の乾燥処理装置
US5607002A (en) 1993-04-28 1997-03-04 Advanced Delivery & Chemical Systems, Inc. Chemical refill system for high purity chemicals
US5578132A (en) 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JPH0766424A (ja) 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH07158767A (ja) 1993-12-09 1995-06-20 Kokusai Electric Co Ltd ゲートバルブ
US5460689A (en) 1994-02-28 1995-10-24 Applied Materials, Inc. High pressure plasma treatment method and apparatus
US5880041A (en) 1994-05-27 1999-03-09 Motorola Inc. Method for forming a dielectric layer using high pressure
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US5808245A (en) 1995-01-03 1998-09-15 Donaldson Company, Inc. Vertical mount catalytic converter muffler
JPH08195493A (ja) 1995-01-13 1996-07-30 Toshiba Corp 薄膜トランジスタの製造方法
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US5858051A (en) 1995-05-08 1999-01-12 Toshiba Machine Co., Ltd. Method of manufacturing optical waveguide
JP2872637B2 (ja) 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
JP3684624B2 (ja) 1995-08-02 2005-08-17 ソニー株式会社 反応ガス供給装置
US5747383A (en) 1995-09-05 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd Method for forming conductive lines and stacked vias
US5857368A (en) 1995-10-06 1999-01-12 Applied Materials, Inc. Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion
US5877087A (en) 1995-11-21 1999-03-02 Applied Materials, Inc. Low temperature integrated metallization process and apparatus
JPH09296267A (ja) 1995-11-21 1997-11-18 Applied Materials Inc 高圧押出しによる、半導体基板における金属パスの製造装置および方法
US5677230A (en) 1995-12-01 1997-10-14 Motorola Method of making wide bandgap semiconductor devices
US6077571A (en) 1995-12-19 2000-06-20 The Research Foundation Of State University Of New York Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation
US5895274A (en) 1996-01-22 1999-04-20 Micron Technology, Inc. High-pressure anneal process for integrated circuits
US5918149A (en) 1996-02-16 1999-06-29 Advanced Micro Devices, Inc. Deposition of a conductor in a via hole or trench
KR980012044A (ko) 1996-03-01 1998-04-30 히가시 데츠로 기판건조장치 및 기판건조방법
US5998305A (en) 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
US5738915A (en) 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US6082950A (en) 1996-11-18 2000-07-04 Applied Materials, Inc. Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding
US5886864A (en) 1996-12-02 1999-03-23 Applied Materials, Inc. Substrate support member for uniform heating of a substrate
TW347570B (en) 1996-12-24 1998-12-11 Toshiba Co Ltd Semiconductor device and method for manufacturing the same
US5888888A (en) 1997-01-29 1999-03-30 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
JP2980052B2 (ja) 1997-03-31 1999-11-22 日本電気株式会社 半導体装置の製造方法
US6334249B2 (en) 1997-04-22 2002-01-01 Texas Instruments Incorporated Cavity-filling method for reducing surface topography and roughness
KR100560049B1 (ko) 1997-05-10 2006-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법
JP2976931B2 (ja) 1997-06-04 1999-11-10 日本電気株式会社 半導体装置の製造方法
US6309713B1 (en) 1997-06-30 2001-10-30 Applied Materials, Inc. Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
US6136664A (en) 1997-08-07 2000-10-24 International Business Machines Corporation Filling of high aspect ratio trench isolation
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
KR100261017B1 (ko) 1997-08-19 2000-08-01 윤종용 반도체 장치의 금속 배선층을 형성하는 방법
US6348376B2 (en) 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US5963817A (en) 1997-10-16 1999-10-05 International Business Machines Corporation Bulk and strained silicon on insulator using local selective oxidation
JP3199006B2 (ja) 1997-11-18 2001-08-13 日本電気株式会社 層間絶縁膜の形成方法および絶縁膜形成装置
US6442980B2 (en) 1997-11-26 2002-09-03 Chart Inc. Carbon dioxide dry cleaning system
US6140235A (en) 1997-12-05 2000-10-31 Applied Materials, Inc. High pressure copper fill at low temperature
KR100275727B1 (ko) 1998-01-06 2001-01-15 윤종용 반도체 장치의 커패시터 형성방법
JP3296281B2 (ja) 1998-01-22 2002-06-24 日本電気株式会社 スパッタリング装置及びスパッタリング方法
US6846739B1 (en) 1998-02-27 2005-01-25 Micron Technology, Inc. MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
US6164412A (en) 1998-04-03 2000-12-26 Arvin Industries, Inc. Muffler
JP3955386B2 (ja) 1998-04-09 2007-08-08 富士通株式会社 半導体装置及びその製造方法
JPH11354515A (ja) 1998-06-04 1999-12-24 Ishikawajima Harima Heavy Ind Co Ltd 加圧式加熱炉
US6103585A (en) 1998-06-09 2000-08-15 Siemens Aktiengesellschaft Method of forming deep trench capacitors
KR100319888B1 (ko) 1998-06-16 2002-01-10 윤종용 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법
KR100287180B1 (ko) 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
US6719516B2 (en) 1998-09-28 2004-04-13 Applied Materials, Inc. Single wafer load lock with internal wafer transport
KR100327328B1 (ko) 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
JP2000221799A (ja) 1999-01-29 2000-08-11 Canon Inc 画像形成装置
KR100804853B1 (ko) 1999-03-04 2008-02-20 서페이스 테크놀로지 시스템스 피엘씨 삼불화염소가스발생기시스템
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
JP4096440B2 (ja) 1999-03-11 2008-06-04 三菱瓦斯化学株式会社 多層成形品
US6387764B1 (en) 1999-04-02 2002-05-14 Silicon Valley Group, Thermal Systems Llc Trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth
JP3892621B2 (ja) 1999-04-19 2007-03-14 株式会社神戸製鋼所 配線膜の形成方法
US6086730A (en) 1999-04-22 2000-07-11 Komag, Incorporated Method of sputtering a carbon protective film on a magnetic disk with high sp3 content
JP2000340671A (ja) 1999-05-26 2000-12-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP2001053066A (ja) 1999-05-28 2001-02-23 Tokyo Electron Ltd オゾン処理装置およびその方法
US6355558B1 (en) 1999-06-10 2002-03-12 Texas Instruments Incorporated Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
JP2000357699A (ja) 1999-06-16 2000-12-26 Seiko Epson Corp 半導体装置
EP1069213A3 (en) 1999-07-12 2004-01-28 Applied Materials, Inc. Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper
US6468490B1 (en) 2000-06-29 2002-10-22 Applied Materials, Inc. Abatement of fluorine gas from effluent
US6612317B2 (en) 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
ATE418158T1 (de) 1999-08-17 2009-01-15 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung
US6299753B1 (en) 1999-09-01 2001-10-09 Applied Materials, Inc. Double pressure vessel chemical dispenser unit
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
JP2001110729A (ja) 1999-10-06 2001-04-20 Mitsubishi Heavy Ind Ltd 半導体素子の連続製造装置
FI117942B (fi) 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
KR100304714B1 (ko) 1999-10-20 2001-11-02 윤종용 금속 할로겐 가스를 사용한 반도체 소자의 금속 박막 형성방법
US6444372B1 (en) 1999-10-25 2002-09-03 Svg Lithography Systems, Inc. Non absorbing reticle and method of making same
US20030148631A1 (en) 1999-11-08 2003-08-07 Taiwan Semiconductor Manufacturing Company Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile
US6500603B1 (en) 1999-11-11 2002-12-31 Mitsui Chemicals, Inc. Method for manufacturing polymer optical waveguide
KR100629255B1 (ko) 1999-11-12 2006-09-29 삼성전자주식회사 반도체 포토 공정용 베이크 장치
KR100321561B1 (ko) 1999-11-16 2002-01-23 박호군 휘발 성분이 포함된 다성분 산화물 강유전체 박막의 제조방법
US6399486B1 (en) 1999-11-22 2002-06-04 Taiwan Semiconductor Manufacturing Company Method of improved copper gap fill
TW484170B (en) 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
US6969448B1 (en) 1999-12-30 2005-11-29 Cypress Semiconductor Corp. Method for forming a metallization structure in an integrated circuit
US6150286A (en) 2000-01-03 2000-11-21 Advanced Micro Devices, Inc. Method of making an ultra thin silicon nitride film
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6251242B1 (en) 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
JP2001250787A (ja) 2000-03-06 2001-09-14 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
DE60125338T2 (de) 2000-03-07 2007-07-05 Asm International N.V. Gradierte dünne schichten
US6506653B1 (en) 2000-03-13 2003-01-14 International Business Machines Corporation Method using disposable and permanent films for diffusion and implant doping
JP4637989B2 (ja) 2000-03-24 2011-02-23 株式会社神戸製鋼所 半導体配線膜の形成方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US20040025908A1 (en) 2000-04-18 2004-02-12 Stephen Douglas Supercritical fluid delivery system for semiconductor wafer processing
KR100363088B1 (ko) 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
KR100775159B1 (ko) 2000-05-15 2007-11-12 에이에스엠 인터내셔널 엔.붸. 집적회로의 생산 공정
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6921722B2 (en) 2000-05-30 2005-07-26 Ebara Corporation Coating, modification and etching of substrate surface with particle beam irradiation of the same
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6585823B1 (en) 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6464779B1 (en) 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
JP4335469B2 (ja) 2001-03-22 2009-09-30 株式会社荏原製作所 真空排気装置のガス循環量調整方法及び装置
US6797336B2 (en) 2001-03-22 2004-09-28 Ambp Tech Corporation Multi-component substances and processes for preparation thereof
TW544797B (en) 2001-04-17 2003-08-01 Kobe Steel Ltd High-pressure processing apparatus
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
US7080651B2 (en) 2001-05-17 2006-07-25 Dainippon Screen Mfg. Co., Ltd. High pressure processing apparatus and method
KR100433846B1 (ko) 2001-05-23 2004-06-04 주식회사 하이닉스반도체 반도체장치의 금속도전막 형성방법
US6752585B2 (en) 2001-06-13 2004-06-22 Applied Materials Inc Method and apparatus for transferring a semiconductor substrate
EP1271636A1 (en) 2001-06-22 2003-01-02 Infineon Technologies AG Thermal oxidation process control by controlling oxidation agent partial pressure
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
JP2003051474A (ja) 2001-08-03 2003-02-21 Kobe Steel Ltd 高圧処理装置
US6889627B1 (en) 2001-08-08 2005-05-10 Lam Research Corporation Symmetrical semiconductor reactor
US6781801B2 (en) 2001-08-10 2004-08-24 Seagate Technology Llc Tunneling magnetoresistive sensor with spin polarized current injection
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
JP2003077974A (ja) 2001-08-31 2003-03-14 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6619304B2 (en) 2001-09-13 2003-09-16 Micell Technologies, Inc. Pressure chamber assembly including non-mechanical drive means
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US20030059538A1 (en) 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US7105061B1 (en) 2001-11-07 2006-09-12 Novellus Systems, Inc. Method and apparatus for sealing substrate load port in a high pressure reactor
US6620956B2 (en) 2001-11-16 2003-09-16 Applied Materials, Inc. Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing
US20030098069A1 (en) 2001-11-26 2003-05-29 Sund Wesley E. High purity fluid delivery system
JP2003166065A (ja) 2001-11-30 2003-06-13 Sekisui Chem Co Ltd 放電プラズマ処理装置
KR100450564B1 (ko) 2001-12-20 2004-09-30 동부전자 주식회사 반도체 소자의 금속 배선 후처리 방법
JP2003188387A (ja) 2001-12-20 2003-07-04 Sony Corp 薄膜トランジスタ及びその製造方法
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
JP2003243374A (ja) 2002-02-20 2003-08-29 Tokyo Electron Ltd 基板処理装置及び基板処理方法
US6835503B2 (en) 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7910165B2 (en) 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US6657304B1 (en) 2002-06-06 2003-12-02 Advanced Micro Devices, Inc. Conformal barrier liner in an integrated circuit interconnect
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US7521089B2 (en) 2002-06-13 2009-04-21 Tokyo Electron Limited Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
US20070243317A1 (en) 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US20070212850A1 (en) 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
JP2004127958A (ja) 2002-09-30 2004-04-22 Kyoshin Engineering:Kk 高圧アニール水蒸気処理を行なう装置及び方法
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
US20040060519A1 (en) 2002-10-01 2004-04-01 Seh America Inc. Quartz to quartz seal using expanded PTFE gasket material
US6889508B2 (en) 2002-10-02 2005-05-10 The Boc Group, Inc. High pressure CO2 purification and supply system
US7270761B2 (en) 2002-10-18 2007-09-18 Appleid Materials, Inc Fluorine free integrated process for etching aluminum including chamber dry clean
KR100480634B1 (ko) 2002-11-19 2005-03-31 삼성전자주식회사 니켈 살리사이드 공정을 이용한 반도체 소자의 제조방법
AU2002368383A1 (en) 2002-11-25 2004-06-18 Koyo Thermo Systems Co., Ltd. Electric heater for semiconductor processing apparatus
US20040112409A1 (en) 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US6825115B1 (en) 2003-01-14 2004-11-30 Advanced Micro Devices, Inc. Post silicide laser thermal annealing to avoid dopant deactivation
KR101058882B1 (ko) 2003-02-04 2011-08-23 어플라이드 머티어리얼스, 인코포레이티드 초-저압에서 암모니아를 이용한 급속 열 어닐링을 통한 실리콘 옥시질화물의 질소 프로파일 테일러링
JP3956049B2 (ja) 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US6809005B2 (en) 2003-03-12 2004-10-26 Infineon Technologies Ag Method to fill deep trench structures with void-free polysilicon or silicon
US7079760B2 (en) 2003-03-17 2006-07-18 Tokyo Electron Limited Processing system and method for thermally treating a substrate
WO2004102055A1 (en) 2003-05-13 2004-11-25 Applied Materials, Inc. Methods and apparatus for sealing an opening of a processing chamber
US6867130B1 (en) 2003-05-28 2005-03-15 Advanced Micro Devices, Inc. Enhanced silicidation of polysilicon gate electrodes
US6939794B2 (en) 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
US7226512B2 (en) 2003-06-18 2007-06-05 Ekc Technology, Inc. Load lock system for supercritical fluid cleaning
WO2005007283A2 (en) 2003-07-08 2005-01-27 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
KR100539274B1 (ko) 2003-07-15 2005-12-27 삼성전자주식회사 코발트 막 증착 방법
JP4417669B2 (ja) 2003-07-28 2010-02-17 日本エー・エス・エム株式会社 半導体処理装置および半導体ウエハーの導入方法
JP4173781B2 (ja) 2003-08-13 2008-10-29 株式会社神戸製鋼所 高圧処理方法
JP4443879B2 (ja) 2003-09-03 2010-03-31 株式会社協真エンジニアリング 高精度高圧アニール装置
US7029966B2 (en) 2003-09-18 2006-04-18 International Business Machines Corporation Process options of forming silicided metal gates for advanced CMOS devices
US6867152B1 (en) 2003-09-26 2005-03-15 Novellus Systems, Inc. Properties of a silica thin film produced by a rapid vapor deposition (RVD) process
US7109087B2 (en) 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
WO2005057663A2 (en) 2003-12-10 2005-06-23 Koninklijke Philips Electronics N.V. Method and apparatus for fabrication of metal-oxide semiconductor integrated circuit devices
US20050161158A1 (en) 2003-12-23 2005-07-28 Schumacher John C. Exhaust conditioning system for semiconductor reactor
US7158221B2 (en) 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
US20050250347A1 (en) 2003-12-31 2005-11-10 Bailey Christopher M Method and apparatus for maintaining by-product volatility in deposition process
US20050205210A1 (en) 2004-01-06 2005-09-22 Devine Daniel J Advanced multi-pressure workpiece processing
US7030468B2 (en) 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
US7037816B2 (en) 2004-01-23 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for integration of HfO2 and RTCVD poly-silicon
US6897118B1 (en) 2004-02-11 2005-05-24 Chartered Semiconductor Manufacturing Ltd. Method of multiple pulse laser annealing to activate ultra-shallow junctions
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US7078302B2 (en) 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
US7030016B2 (en) 2004-03-30 2006-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Post ECP multi-step anneal/H2 treatment to reduce film impurity
JP4393268B2 (ja) 2004-05-20 2010-01-06 株式会社神戸製鋼所 微細構造体の乾燥方法
US20050269291A1 (en) 2004-06-04 2005-12-08 Tokyo Electron Limited Method of operating a processing system for treating a substrate
US7268065B2 (en) 2004-06-18 2007-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing metal-silicide features
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
TWI267183B (en) 2004-09-29 2006-11-21 Sanyo Electric Co Semiconductor device and manufacturing method of the same
US7439168B2 (en) 2004-10-12 2008-10-21 Dcg Systems, Inc Apparatus and method of forming silicide in a localized manner
US7491658B2 (en) 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US8585873B2 (en) 2004-10-16 2013-11-19 Aviza Technology Limited Methods and apparatus for sputtering
US20060091493A1 (en) 2004-11-01 2006-05-04 Silicon-Based Technology Corp. LOCOS Schottky barrier contact structure and its manufacturing method
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
US7235472B2 (en) 2004-11-12 2007-06-26 Infineon Technologies Ag Method of making fully silicided gate electrode
US20060156979A1 (en) 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060240187A1 (en) 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
KR100697280B1 (ko) 2005-02-07 2007-03-20 삼성전자주식회사 반도체 제조 설비의 압력 조절 방법
US9576824B2 (en) 2005-02-22 2017-02-21 Spts Technologies Limited Etching chamber with subchamber
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
WO2006098101A1 (ja) 2005-03-16 2006-09-21 Nec Corporation 金属材料、金属材料を用いた半導体集積回路用配線および被覆膜
WO2006101315A1 (en) 2005-03-21 2006-09-28 Pkl Co., Ltd. Device and method for cleaning photomask
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7465650B2 (en) 2005-04-14 2008-12-16 Micron Technology, Inc. Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry
US20120060868A1 (en) 2005-06-07 2012-03-15 Donald Gray Microscale fluid delivery system
CN101198903B (zh) 2005-06-10 2011-09-07 奥贝达克特公司 利用中间印模的图案复制
JP4747693B2 (ja) 2005-06-28 2011-08-17 住友電気工業株式会社 樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法
US7361231B2 (en) 2005-07-01 2008-04-22 Ekc Technology, Inc. System and method for mid-pressure dense phase gas and ultrasonic cleaning
US8148271B2 (en) 2005-08-05 2012-04-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
US7534080B2 (en) 2005-08-26 2009-05-19 Ascentool, Inc. Vacuum processing and transfer system
US7531404B2 (en) 2005-08-30 2009-05-12 Intel Corporation Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
US8926731B2 (en) 2005-09-13 2015-01-06 Rasirc Methods and devices for producing high purity steam
KR100696178B1 (ko) 2005-09-13 2007-03-20 한국전자통신연구원 광 도파로 마스터 및 그 제조 방법
CN101268012B (zh) 2005-10-07 2012-12-26 株式会社尼康 微小构造体及其制造方法
US7794667B2 (en) 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US8460519B2 (en) 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
KR101101757B1 (ko) 2005-11-07 2012-01-05 주성엔지니어링(주) 제조비용을 절감한 진공챔버
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
JP2009516080A (ja) 2005-11-18 2009-04-16 レプリソールス テクノロジーズ アーベー 電極およびその形成方法
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US8306026B2 (en) 2005-12-15 2012-11-06 Toshiba America Research, Inc. Last hop topology sensitive multicasting key management
US7432200B2 (en) 2005-12-15 2008-10-07 Intel Corporation Filling narrow and high aspect ratio openings using electroless deposition
KR20070068596A (ko) 2005-12-27 2007-07-02 삼성전자주식회사 베이크 장치
JP2007180310A (ja) 2005-12-28 2007-07-12 Toshiba Corp 半導体装置
KR100684910B1 (ko) 2006-02-02 2007-02-22 삼성전자주식회사 플라즈마 처리 장치 및 그의 클리닝 방법
US20070187386A1 (en) 2006-02-10 2007-08-16 Poongsan Microtec Corporation Methods and apparatuses for high pressure gas annealing
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US7520969B2 (en) 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
JP2007242791A (ja) 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc 基板処理装置
TW200746268A (en) 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
JP4983087B2 (ja) 2006-04-27 2012-07-25 富士通セミコンダクター株式会社 成膜方法、半導体装置の製造方法、コンピュータ可読記録媒体、スパッタ処理装置
US8062408B2 (en) 2006-05-08 2011-11-22 The Board Of Trustees Of The University Of Illinois Integrated vacuum absorption steam cycle gas separation
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7650965B2 (en) 2006-06-09 2010-01-26 Emcon Technologies Llc Exhaust system
US7709320B2 (en) 2006-06-28 2010-05-04 International Business Machines Corporation Method of fabricating trench capacitors and memory cells using trench capacitors
US7494891B2 (en) 2006-09-21 2009-02-24 International Business Machines Corporation Trench capacitor with void-free conductor fill
JP2008073611A (ja) 2006-09-21 2008-04-03 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
JP4976796B2 (ja) 2006-09-25 2012-07-18 株式会社東芝 半導体装置
US7521379B2 (en) 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
TW200830034A (en) 2006-10-13 2008-07-16 Asahi Glass Co Ltd Method of smoothing surface of substrate for EUV mask blank, and EUV mask blank obtained by the method
JP2008118118A (ja) 2006-10-13 2008-05-22 Asahi Glass Co Ltd Ｅｕｖマスクブランク用の基板表面を平滑化する方法、および該方法により得られるｅｕｖマスクブランク
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US7790587B2 (en) 2006-11-07 2010-09-07 Intel Corporation Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
JP2008153635A (ja) 2006-11-22 2008-07-03 Toshiba Matsushita Display Technology Co Ltd Ｍｏｓ型半導体素子の製造方法
JP5200371B2 (ja) 2006-12-01 2013-06-05 東京エレクトロン株式会社 成膜方法、半導体装置及び記憶媒体
US20080132050A1 (en) 2006-12-05 2008-06-05 Lavoie Adrien R Deposition process for graded cobalt barrier layers
US20080169183A1 (en) 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
JP2008192642A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US20080233404A1 (en) 2007-03-22 2008-09-25 3M Innovative Properties Company Microreplication tools and patterns using laser induced thermal embossing
JP5135856B2 (ja) 2007-03-31 2013-02-06 東京エレクトロン株式会社 トラップ装置、排気系及びこれを用いた処理システム
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
DE102007017641A1 (de) 2007-04-13 2008-10-16 Infineon Technologies Ag Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder
CN101690400B (zh) 2007-04-30 2011-11-30 伊菲雷知识产权公司 用于厚膜介质电致发光显示器的层状厚膜介质结构
CN101681398B (zh) 2007-05-25 2016-08-10 应用材料公司 组装及操作电子器件制造系统的方法和设备
US20080311711A1 (en) 2007-06-13 2008-12-18 Roland Hampp Gapfill for metal contacts
WO2008156687A1 (en) 2007-06-15 2008-12-24 Applied Materials, Inc. Methods and systems for designing and validating operation of abatement systems
KR101442238B1 (ko) 2007-07-26 2014-09-23 주식회사 풍산마이크로텍 고압 산소 열처리를 통한 반도체 소자의 제조방법
US7645709B2 (en) 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US7763522B2 (en) 2007-08-01 2010-07-27 United Microelectronic Corp. Method of high density plasma gap-filling with minimization of gas phase nucleation
US8648253B1 (en) 2010-10-01 2014-02-11 Ascent Solar Technologies, Inc. Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
US7951728B2 (en) 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US7884012B2 (en) 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
CN101835521A (zh) 2007-10-26 2010-09-15 应用材料公司 利用改进燃料线路的用于智能减废的方法与设备
JP5299605B2 (ja) 2007-11-19 2013-09-25 日揮触媒化成株式会社 低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
KR20090064279A (ko) 2007-12-14 2009-06-18 노벨러스 시스템즈, 인코포레이티드 손상 없는 갭 충진을 위한 보호 층
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US7843063B2 (en) 2008-02-14 2010-11-30 International Business Machines Corporation Microstructure modification in copper interconnect structure
US7964506B1 (en) 2008-03-06 2011-06-21 Novellus Systems, Inc. Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers
US20090246952A1 (en) 2008-03-28 2009-10-01 Tokyo Electron Limited Method of forming a cobalt metal nitride barrier film
JP4815464B2 (ja) 2008-03-31 2011-11-16 株式会社日立製作所 微細構造転写スタンパ及び微細構造転写装置
US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
CN104064499B (zh) 2008-05-02 2018-04-20 应用材料公司 用于旋转基板的非径向温度控制系统
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
US8133793B2 (en) 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US8736587B2 (en) * 2008-07-10 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7655532B1 (en) 2008-07-25 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. STI film property using SOD post-treatment
JP2010080949A (ja) 2008-08-29 2010-04-08 Kisco Ltd 銅膜のアニール方法、アニールされた銅配線およびこの銅配線を有するデバイス
US20100089315A1 (en) 2008-09-22 2010-04-15 Applied Materials, Inc. Shutter disk for physical vapor deposition chamber
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
KR20100035000A (ko) 2008-09-25 2010-04-02 삼성전자주식회사 서로 다른 종횡비를 갖는 소자 분리 트렌치 갭필 방법 및 그를 이용한 반도체 소자
WO2010062582A2 (en) 2008-10-27 2010-06-03 Applied Materials, Inc. Vapor deposition method for ternary compounds
US7891228B2 (en) 2008-11-18 2011-02-22 Mks Instruments, Inc. Dual-mode mass flow verification and mass flow delivery system and method
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
KR20100082170A (ko) 2009-01-08 2010-07-16 삼성전자주식회사 실리콘 산화막 패턴 및 소자 분리막 형성 방법
JP2010168607A (ja) 2009-01-21 2010-08-05 Institute Of National Colleges Of Technology Japan 組成比制御が可能な対向ターゲット式スパッタ装置
US9382621B2 (en) 2009-02-04 2016-07-05 Applied Materials, Inc. Ground return for plasma processes
KR101534678B1 (ko) 2009-02-12 2015-07-08 삼성전자주식회사 텅스텐 콘택 플러그를 산소 분위기에서 ｒｔａ 처리하고, ｒｔｏ 처리된 텅스텐 플러그를 수소 분위기에서 환원시키는 반도체 소자의 제조방법
JP2012518281A (ja) 2009-02-15 2012-08-09 ウッドラフ、ジェイコブ 平衡前駆体から作られる、太陽電池の吸収層
JP2010205854A (ja) 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP4564570B2 (ja) 2009-03-10 2010-10-20 三井造船株式会社 原子層堆積装置
JP4523661B1 (ja) 2009-03-10 2010-08-11 三井造船株式会社 原子層堆積装置及び薄膜形成方法
US8435830B2 (en) 2009-03-18 2013-05-07 Samsung Electronics Co., Ltd. Methods of fabricating semiconductor devices
FR2944147B1 (fr) 2009-04-02 2011-09-23 Saint Gobain Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et struture a surface externe texturee
KR20120004502A (ko) 2009-04-03 2012-01-12 어플라이드 머티어리얼스, 인코포레이티드 고압 ｒｆ-ｄｃ 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법
US20100297854A1 (en) 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
US20100304027A1 (en) 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
JP4415062B1 (ja) * 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR20110000960A (ko) 2009-06-29 2011-01-06 삼성전자주식회사 반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법
CN102473748B (zh) 2009-07-01 2014-08-20 三菱电机株式会社 薄膜太阳能电池及其制造方法
JP2012197463A (ja) 2009-07-03 2012-10-18 Canon Anelva Corp 薄膜の成膜方法
US20110011737A1 (en) 2009-07-17 2011-01-20 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan High-power pulse magnetron sputtering apparatus and surface treatment apparatus using the same
JP5568913B2 (ja) 2009-07-24 2014-08-13 株式会社ユーテック Ｐｚｔ膜の製造方法及び水蒸気加熱装置
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
KR20110023007A (ko) 2009-08-28 2011-03-08 삼성전자주식회사 박막 태양 전지 및 이의 제조방법
JP2011066100A (ja) 2009-09-16 2011-03-31 Bridgestone Corp 光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法
US8278224B1 (en) 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
JP2011108739A (ja) 2009-11-13 2011-06-02 Dainippon Printing Co Ltd 薄膜トランジスタ基板、その製造方法及び画像表示装置
KR101995704B1 (ko) 2009-11-20 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8647992B2 (en) 2010-01-06 2014-02-11 Applied Materials, Inc. Flowable dielectric using oxide liner
JP2013516788A (ja) 2010-01-07 2013-05-13 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄ用のインサイチュオゾン硬化
US8691687B2 (en) 2010-01-07 2014-04-08 International Business Machines Corporation Superfilled metal contact vias for semiconductor devices
EP2526339A4 (en) 2010-01-21 2015-03-11 Powerdyne Inc PRODUCTION OF STEAM FROM A CARBON SUBSTANCE
US20110174363A1 (en) 2010-01-21 2011-07-21 Aqt Solar, Inc. Control of Composition Profiles in Annealed CIGS Absorbers
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US20110204518A1 (en) 2010-02-23 2011-08-25 Globalfoundries Inc. Scalability with reduced contact resistance
JP2013521650A (ja) 2010-03-05 2013-06-10 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄによる共形層
TW201133974A (en) 2010-03-23 2011-10-01 Nat Univ Tsing Hua Method for improving the efficiency of a flexible organic solar cell
US9129945B2 (en) 2010-03-24 2015-09-08 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
JP2011210778A (ja) * 2010-03-29 2011-10-20 Dainippon Printing Co Ltd 薄膜トランジスタ基板
US8795488B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Apparatus for physical vapor deposition having centrally fed RF energy
WO2011132625A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5697534B2 (ja) 2010-05-14 2015-04-08 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR101163711B1 (ko) 2010-06-15 2012-07-09 서울대학교산학협력단 함몰된 바디에 두개의 게이트를 갖는 1ｔ 디램 소자와 그 동작방법 및 제조방법
CN101871043B (zh) 2010-06-25 2012-07-18 东莞市康汇聚线材科技有限公司 一种退火炉蒸汽发生器及其控制方法
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
JP2012049446A (ja) 2010-08-30 2012-03-08 Toshiba Corp 超臨界乾燥方法及び超臨界乾燥システム
EP2426720A1 (en) * 2010-09-03 2012-03-07 Applied Materials, Inc. Staggered thin film transistor and method of forming the same
KR101427502B1 (ko) * 2010-09-13 2014-08-07 파나소닉 주식회사 금속 산화물 반도체 제조 방법
TW201216331A (en) 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
JP2012089744A (ja) 2010-10-21 2012-05-10 Elpida Memory Inc 半導体装置の製造方法
US20120153483A1 (en) 2010-12-20 2012-06-21 Akolkar Rohan N Barrierless single-phase interconnect
KR101226958B1 (ko) 2011-01-18 2013-01-28 연세대학교 산학협력단 액상 공정 산화물 박막의 제조 방법, 이를 이용한 전자 소자 및 박막 트랜지스터
KR20120100241A (ko) * 2011-03-03 2012-09-12 인하대학교 산학협력단 박막 트랜지스터 및 그 제조 방법, 박막 트랜지스터를 구비한 평판 표시 장치
JP5806827B2 (ja) 2011-03-18 2015-11-10 東京エレクトロン株式会社 ゲートバルブ装置及び基板処理装置並びにその基板処理方法
KR20140027917A (ko) 2011-03-25 2014-03-07 이서영 광도파로 및 그 제조방법
JP5450494B2 (ja) 2011-03-25 2014-03-26 株式会社東芝 半導体基板の超臨界乾燥方法
US20120252210A1 (en) 2011-03-30 2012-10-04 Tokyo Electron Limited Method for modifying metal cap layers in semiconductor devices
WO2012133583A1 (ja) 2011-03-30 2012-10-04 大日本印刷株式会社 超臨界乾燥装置及び超臨界乾燥方法
US8524600B2 (en) 2011-03-31 2013-09-03 Applied Materials, Inc. Post deposition treatments for CVD cobalt films
US8637410B2 (en) 2011-04-08 2014-01-28 Applied Materials, Inc. Method for metal deposition using hydrogen plasma
US9299581B2 (en) 2011-05-12 2016-03-29 Applied Materials, Inc. Methods of dry stripping boron-carbon films
JP6085423B2 (ja) 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
US8435887B2 (en) 2011-06-02 2013-05-07 International Business Machines Corporation Copper interconnect formation
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
GB201110117D0 (en) 2011-06-16 2011-07-27 Fujifilm Mfg Europe Bv method and device for manufacturing a barrie layer on a flexible substrate
KR101228649B1 (ko) * 2011-06-20 2013-01-31 성균관대학교산학협력단 열전소자의 자발적 초격자구조 다성분계 금속산화물 박막제조방법
CN103620758B (zh) 2011-06-28 2017-02-15 动力微系统公司 半导体储料器系统和方法
JP5544666B2 (ja) 2011-06-30 2014-07-09 セメス株式会社 基板処理装置
WO2013009505A2 (en) 2011-07-13 2013-01-17 Applied Materials, Inc. Methods of manufacturing thin film transistor devices
WO2013008982A1 (ko) 2011-07-14 2013-01-17 엘티씨 (주) 높은 광추출 성능을 갖는 무기 산란막 {inorganic scattering films having high light extraction performance}
US9368603B2 (en) 2011-09-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact for high-k metal gate device
US8546227B2 (en) 2011-09-15 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Contact for high-K metal gate device
US10023954B2 (en) 2011-09-15 2018-07-17 Applied Materials, Inc. Slit valve apparatus, systems, and methods
CN103035513B (zh) 2011-09-30 2016-10-05 中芯国际集成电路制造(上海)有限公司 无定形碳膜的形成方法
KR101568748B1 (ko) 2011-11-01 2015-11-12 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 반도체 장치의 제조 장치 및 기록 매체
JP5712902B2 (ja) 2011-11-10 2015-05-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR101305904B1 (ko) 2011-12-07 2013-09-09 주식회사 테스 반도체소자 제조방법
WO2013083129A1 (en) 2011-12-08 2013-06-13 Inmold Biosystems A/S Spin-on-glass assisted polishing of rough substrates
JP2013122493A (ja) 2011-12-09 2013-06-20 Furukawa Electric Co Ltd:The 光分岐素子および光分岐回路
JP2013206919A (ja) * 2012-03-27 2013-10-07 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013154315A (ja) 2012-01-31 2013-08-15 Ricoh Co Ltd 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置
US8993458B2 (en) 2012-02-13 2015-03-31 Applied Materials, Inc. Methods and apparatus for selective oxidation of a substrate
JPWO2013129701A1 (ja) * 2012-03-02 2015-07-30 独立行政法人科学技術振興機構 導電性膜の形成方法
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
TWI502645B (zh) * 2012-03-09 2015-10-01 Air Prod & Chem 低溫含矽膜
KR102140719B1 (ko) * 2012-03-09 2020-08-03 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 디스플레이 디바이스를 위한 배리어 물질
JP5577365B2 (ja) 2012-03-15 2014-08-20 コマツ産機株式会社 プレス機械の制動性能確認装置
US9330939B2 (en) 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US9303311B2 (en) 2012-03-30 2016-04-05 Applied Materials, Inc. Substrate processing system with mechanically floating target assembly
US9647066B2 (en) 2012-04-24 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy FinFET structure and method of making same
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US20130337171A1 (en) 2012-06-13 2013-12-19 Qualcomm Mems Technologies, Inc. N2 purged o-ring for chamber in chamber ald system
KR101224520B1 (ko) 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
KR20140003776A (ko) 2012-06-28 2014-01-10 주식회사 메카로닉스 고 저항 산화아연 박막의 제조방법
US20150309073A1 (en) 2012-07-13 2015-10-29 Northwestern University Multifunctional graphene coated scanning tips
JP2014019912A (ja) 2012-07-19 2014-02-03 Tokyo Electron Ltd タングステン膜の成膜方法
CN102790012A (zh) * 2012-07-20 2012-11-21 京东方科技集团股份有限公司 阵列基板的制造方法及阵列基板、显示装置
JP5792390B2 (ja) 2012-07-30 2015-10-14 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
US8846448B2 (en) 2012-08-10 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Warpage control in a package-on-package structure
KR101680152B1 (ko) 2012-08-24 2016-11-28 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 게르마늄 층 상에 질화 산화 알루미늄 막을 구비하는 반도체 구조 및 그 제조방법
KR102002782B1 (ko) 2012-09-10 2019-07-23 삼성전자주식회사 팽창성 부재를 사용하는 반도체 장치의 제조 방법
JP2014060256A (ja) 2012-09-18 2014-04-03 Tokyo Electron Ltd 処理システム
JP6325229B2 (ja) 2012-10-17 2018-05-16 株式会社半導体エネルギー研究所 酸化物膜の作製方法
US9337318B2 (en) 2012-10-26 2016-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with dummy gate on non-recessed shallow trench isolation (STI)
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
JP6060460B2 (ja) 2012-11-22 2017-01-18 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ シリカ質膜の形成方法及び同方法で形成されたシリカ質膜
TWI826650B (zh) 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
WO2014085511A2 (en) 2012-11-27 2014-06-05 The Regents Of The University Of California Polymerized metal-organic material for printable photonic devices
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
JP2014141739A (ja) 2012-12-27 2014-08-07 Tokyo Electron Ltd 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
US9559181B2 (en) 2013-11-26 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with buried sige oxide
WO2014115600A1 (ja) 2013-01-22 2014-07-31 ピーエスフォー ルクスコ エスエイアールエル 半導体装置の製造方法
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US20140216498A1 (en) 2013-02-06 2014-08-07 Kwangduk Douglas Lee Methods of dry stripping boron-carbon films
CN104995333B (zh) 2013-02-19 2017-09-22 应用材料公司 使用可流动式cvd膜的hdd图案化
KR20140104112A (ko) 2013-02-20 2014-08-28 주식회사 에스에프에이 평면 디스플레이용 화학 기상 증착장치
KR101443792B1 (ko) 2013-02-20 2014-09-26 국제엘렉트릭코리아 주식회사 건식 기상 식각 장치
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9680095B2 (en) 2013-03-13 2017-06-13 Macronix International Co., Ltd. Resistive RAM and fabrication method
TWI624897B (zh) 2013-03-15 2018-05-21 應用材料股份有限公司 多位置批次負載鎖定裝置與系統，以及包括該裝置與系統的方法
US9196768B2 (en) 2013-03-15 2015-11-24 Jehad A. Abushama Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate
TWI614102B (zh) 2013-03-15 2018-02-11 應用材料股份有限公司 基板沉積系統、機械手臂運輸設備及用於電子裝置製造之方法
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US10224258B2 (en) 2013-03-22 2019-03-05 Applied Materials, Inc. Method of curing thermoplastics with microwave energy
US9190321B2 (en) 2013-04-08 2015-11-17 International Business Machines Corporation Self-forming embedded diffusion barriers
US9087903B2 (en) 2013-04-26 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Buffer layer omega gate
US9538586B2 (en) 2013-04-26 2017-01-03 Applied Materials, Inc. Method and apparatus for microwave treatment of dielectric films
KR101287035B1 (ko) 2013-05-07 2013-07-17 호용종합건설주식회사 관 갱생 건증기 공급용 보일러 시스템
CN105247664B (zh) 2013-05-31 2018-04-10 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及炉口盖体
JP6196481B2 (ja) 2013-06-24 2017-09-13 株式会社荏原製作所 排ガス処理装置
KR101542803B1 (ko) 2013-07-09 2015-08-07 주식회사 네오세미텍 고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법
KR20150010065A (ko) * 2013-07-18 2015-01-28 삼성디스플레이 주식회사 산화물 반도체 소자의 제조 방법 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법
EP2832899A1 (fr) 2013-08-02 2015-02-04 The Swatch Group Research and Development Ltd. Revêtement de diamant et procédé de dépôt d'un tel revêtement
US9178103B2 (en) 2013-08-09 2015-11-03 Tsmc Solar Ltd. Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities
US9748105B2 (en) 2013-08-16 2017-08-29 Applied Materials, Inc. Tungsten deposition with tungsten hexafluoride (WF6) etchback
US9548200B2 (en) 2013-08-21 2017-01-17 Applied Materials, Inc. Variable frequency microwave (VFM) processes and applications in semiconductor thin film fabrications
JP6226648B2 (ja) 2013-09-04 2017-11-08 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US9224734B2 (en) 2013-09-13 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS devices with reduced leakage and methods of forming the same
KR20150031889A (ko) 2013-09-17 2015-03-25 엘지이노텍 주식회사 테양전지
US9685371B2 (en) 2013-09-27 2017-06-20 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
JP6165577B2 (ja) 2013-09-30 2017-07-19 Hoya株式会社 マスクブランクの製造方法及び転写用マスクの製造方法
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
US9583655B2 (en) 2013-10-08 2017-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making photovoltaic device having high quantum efficiency
JP6129712B2 (ja) 2013-10-24 2017-05-17 信越化学工業株式会社 過熱水蒸気処理装置
JP6254823B2 (ja) 2013-11-01 2017-12-27 Ｊｘ金属株式会社 ニッケルシリサイドスパッタリングターゲット及びその製造方法
KR102210672B1 (ko) * 2013-11-15 2021-02-04 삼성디스플레이 주식회사 산화물 반도체 소자의 제조 방법 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법
KR20150062545A (ko) 2013-11-29 2015-06-08 삼성전기주식회사 베이크 장치
JP6221710B2 (ja) 2013-12-10 2017-11-01 住友電気工業株式会社 半導体装置の製造方法
SG11201604722WA (en) 2013-12-22 2016-07-28 Applied Materials Inc Glass ceramic for ultraviolet lithography and method of manufacturing thereof
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
CN103745978B (zh) * 2014-01-03 2016-08-17 京东方科技集团股份有限公司 显示装置、阵列基板及其制作方法
US9677172B2 (en) 2014-01-21 2017-06-13 Applied Materials, Inc. Methods for forming a cobalt-ruthenium liner layer for interconnect structures
US9257527B2 (en) 2014-02-14 2016-02-09 International Business Machines Corporation Nanowire transistor structures with merged source/drain regions using auxiliary pillars
US9818603B2 (en) 2014-03-06 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9496145B2 (en) 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods
US10333017B2 (en) 2014-03-21 2019-06-25 Brookhaven Science Associates, Llc Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells
US11183375B2 (en) 2014-03-31 2021-11-23 Applied Materials, Inc. Deposition system with multi-cathode and method of manufacture thereof
KR101571715B1 (ko) 2014-04-23 2015-11-25 주식회사 풍산 고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법
US9984915B2 (en) 2014-05-30 2018-05-29 Infineon Technologies Ag Semiconductor wafer and method for processing a semiconductor wafer
KR101561924B1 (ko) * 2014-06-12 2015-10-22 연세대학교 산학협력단 산화물 박막 후처리 방법, 및 그를 이용한 반도체 소자 제조 방법
CN104047676A (zh) 2014-06-14 2014-09-17 马根昌 改良式对冲消声器
CN106463358B (zh) 2014-06-16 2020-04-24 英特尔公司 金属互连件的接缝愈合
CN104089491B (zh) 2014-07-03 2015-11-04 肇庆宏旺金属实业有限公司 退火炉的余热回收利用系统
US9257314B1 (en) 2014-07-31 2016-02-09 Poongsan Corporation Methods and apparatuses for deuterium recovery
US9695503B2 (en) 2014-08-22 2017-07-04 Applied Materials, Inc. High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
JPWO2016038664A1 (ja) 2014-09-08 2017-04-27 三菱電機株式会社 半導体アニール装置
US9773865B2 (en) 2014-09-22 2017-09-26 International Business Machines Corporation Self-forming spacers using oxidation
US9484461B2 (en) 2014-09-29 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with substrate isolation and un-doped channel
US9362107B2 (en) 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
US20160111342A1 (en) * 2014-10-17 2016-04-21 Lam Research Corporation Method and apparatus for characterizing metal oxide reduction
US9711414B2 (en) 2014-10-21 2017-07-18 Samsung Electronics Co., Ltd. Strained stacked nanosheet FETS and/or quantum well stacked nanosheet
US20160118391A1 (en) 2014-10-22 2016-04-28 SanDisk Technologies, Inc. Deuterium anneal of semiconductor channels in a three-dimensional memory structure
KR102079501B1 (ko) 2014-10-24 2020-02-20 버슘머트리얼즈 유에스, 엘엘씨 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법
US10204764B2 (en) 2014-10-28 2019-02-12 Applied Materials, Inc. Methods for forming a metal silicide interconnection nanowire structure
US9768060B2 (en) 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US10236197B2 (en) * 2014-11-06 2019-03-19 Applied Materials, Inc. Processing system containing an isolation region separating a deposition chamber from a treatment chamber
US9543141B2 (en) 2014-12-09 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd Method for curing flowable layer
US9780214B2 (en) 2014-12-22 2017-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including Fin- FET and manufacturing method thereof
US9777378B2 (en) 2015-01-07 2017-10-03 Applied Materials, Inc. Advanced process flow for high quality FCVD films
WO2016111833A1 (en) 2015-01-09 2016-07-14 Applied Materials, Inc. Direct deposition of nickel silicide nanowire
TW201639063A (zh) 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
EP3460827B1 (en) 2015-02-06 2022-05-25 Versum Materials US, LLC Compositions and methods using same for carbon doped silicon containing films
US9859039B2 (en) 2015-02-13 2018-01-02 Alexander Otto Multifilament superconducting wire with high resistance sleeves
US20160268127A1 (en) 2015-03-13 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide and Manufacturing Method Thereof
US9711535B2 (en) 2015-03-13 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming FinFET channel
US9590102B2 (en) 2015-04-15 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10103046B2 (en) 2015-04-20 2018-10-16 Applied Materials, Inc. Buffer chamber wafer heating mechanism and supporting robot
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
TWI677046B (zh) * 2015-04-23 2019-11-11 美商應用材料股份有限公司 半導體處理系統中的外部基板材旋轉
US10443934B2 (en) 2015-05-08 2019-10-15 Varian Semiconductor Equipment Associates, Inc. Substrate handling and heating system
US9685303B2 (en) 2015-05-08 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus for heating and processing a substrate
TWI723993B (zh) 2015-05-11 2021-04-11 美商應用材料股份有限公司 水平環繞式閘極與鰭式場效電晶體元件的隔離
KR101681190B1 (ko) 2015-05-15 2016-12-02 세메스 주식회사 기판 건조 장치 및 방법
US10446706B2 (en) 2015-05-15 2019-10-15 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction
WO2016191621A1 (en) 2015-05-27 2016-12-01 Applied Materials, Inc. Methods and apparatus for a microwave batch curing process
US10597779B2 (en) 2015-06-05 2020-03-24 Applied Materials, Inc. Susceptor position and rational apparatus and methods of use
CN107836034B (zh) 2015-06-05 2022-07-19 东京毅力科创株式会社 用于互连的钌金属特征部填充
US9633839B2 (en) 2015-06-19 2017-04-25 Applied Materials, Inc. Methods for depositing dielectric films via physical vapor deposition processes
US9728430B2 (en) 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
US20160379854A1 (en) 2015-06-29 2016-12-29 Varian Semiconductor Equipment Associates, Inc. Vacuum Compatible LED Substrate Heater
US10170608B2 (en) 2015-06-30 2019-01-01 International Business Machines Corporation Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET
US9646850B2 (en) 2015-07-06 2017-05-09 Globalfoundries Inc. High-pressure anneal
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10468238B2 (en) 2015-08-21 2019-11-05 Applied Materials, Inc. Methods and apparatus for co-sputtering multiple targets
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9484406B1 (en) 2015-09-03 2016-11-01 Applied Materials, Inc. Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
US9530737B1 (en) 2015-09-28 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9716142B2 (en) 2015-10-12 2017-07-25 International Business Machines Corporation Stacked nanowires
FR3042400A1 (fr) 2015-10-15 2017-04-21 Essilor Int Dispositif de test du comportement visuel d'un individu et methode de determination d'au moins un parametre de conception optique d'une lentille ophtalmique utilisant un tel dispositif
US9755047B2 (en) 2015-10-27 2017-09-05 United Microelectronics Corp. Semiconductor process and semiconductor device
US9484255B1 (en) 2015-11-03 2016-11-01 International Business Machines Corporation Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
US9754840B2 (en) 2015-11-16 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Horizontal gate-all-around device having wrapped-around source and drain
US9502307B1 (en) 2015-11-20 2016-11-22 International Business Machines Corporation Forming a semiconductor structure for reduced negative bias temperature instability
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
KR20170080796A (ko) * 2015-12-30 2017-07-11 삼성디스플레이 주식회사 산화물 반도체 소자의 제조 방법
JP6856651B2 (ja) 2016-01-05 2021-04-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体アプリケーション用の水平ゲートオールアラウンドデバイスのためのナノワイヤ製造方法
US9805976B2 (en) 2016-01-08 2017-10-31 Applied Materials, Inc. Co or Ni and Cu integration for small and large features in integrated circuits
US9570551B1 (en) 2016-02-05 2017-02-14 International Business Machines Corporation Replacement III-V or germanium nanowires by unilateral confined epitaxial growth
US9679810B1 (en) 2016-02-11 2017-06-13 Globalfoundries Inc. Integrated circuit having improved electromigration performance and method of forming same
JP6240695B2 (ja) 2016-03-02 2017-11-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
CN108780819B (zh) 2016-03-11 2022-06-14 株式会社半导体能源研究所 复合体及晶体管
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US10049927B2 (en) 2016-06-10 2018-08-14 Applied Materials, Inc. Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
TWI680535B (zh) 2016-06-14 2019-12-21 美商應用材料股份有限公司 金屬及含金屬化合物之氧化體積膨脹
US9933314B2 (en) 2016-06-30 2018-04-03 Varian Semiconductor Equipment Associates, Inc. Semiconductor workpiece temperature measurement system
US9876019B1 (en) 2016-07-13 2018-01-23 Globalfoundries Singapore Pte. Ltd. Integrated circuits with programmable memory and methods for producing the same
US10020186B2 (en) 2016-07-29 2018-07-10 Applied Materials, Inc. Silicon germanium selective oxidation process
US10115670B2 (en) 2016-08-17 2018-10-30 International Business Machines Corporation Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
US20180087418A1 (en) 2016-09-22 2018-03-29 Castrol Limited Fluid Method and System
EP3520136A4 (en) 2016-09-30 2020-05-06 Applied Materials, Inc. METHODS OF FORMING SELF-ALIGNED INTERCONNECT HOLES
US10249525B2 (en) 2016-10-03 2019-04-02 Applied Materials, Inc. Dynamic leveling process heater lift
US9741626B1 (en) 2016-10-20 2017-08-22 International Business Machines Corporation Vertical transistor with uniform bottom spacer formed by selective oxidation
KR102582671B1 (ko) 2016-12-22 2023-09-25 삼성전자주식회사 반도체 소자
TWI758398B (zh) 2017-01-24 2022-03-21 美商應用材料股份有限公司 用於在基板上形成鈷層的方法
US10570506B2 (en) 2017-01-24 2020-02-25 Applied Materials, Inc. Method to improve film quality for PVD carbon with reactive gas and bias power
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10460933B2 (en) 2017-03-31 2019-10-29 Applied Materials, Inc. Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film
KR102271768B1 (ko) 2017-04-07 2021-06-30 어플라이드 머티어리얼스, 인코포레이티드 반응성 어닐링을 사용하는 갭충전
WO2018194807A1 (en) 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
CN116504679A (zh) 2017-05-01 2023-07-28 应用材料公司 具有真空隔离和预处理环境的高压退火腔室
CN110603634A (zh) 2017-05-03 2019-12-20 应用材料公司 在高温陶瓷加热器上的集成衬底温度测量
US10861681B2 (en) 2017-05-19 2020-12-08 Applied Materials, Inc. Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
KR20190137967A (ko) 2017-06-02 2019-12-11 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 증착된 막들의 품질 개선
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
US10388533B2 (en) 2017-06-16 2019-08-20 Applied Materials, Inc. Process integration method to tune resistivity of nickel silicide
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US10096516B1 (en) 2017-08-18 2018-10-09 Applied Materials, Inc. Method of forming a barrier layer for through via applications
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
JP7112490B2 (ja) 2017-11-11 2022-08-03 マイクロマテリアルズ エルエルシー 高圧処理チャンバのためのガス供給システム
KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
US11114333B2 (en) 2018-02-22 2021-09-07 Micromaterials, LLC Method for depositing and reflow of a high quality etch resistant gapfill dielectric film
CN111656510A (zh) 2018-02-22 2020-09-11 应用材料公司 处理掩模基板以实现更佳的膜质量的方法
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10916433B2 (en) 2018-04-06 2021-02-09 Applied Materials, Inc. Methods of forming metal silicide layers and metal silicide layers formed therefrom
WO2019204124A1 (en) 2018-04-20 2019-10-24 Applied Materials, Inc. Ceramic wafer heater with integrated pressurized helium cooling
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US11499666B2 (en) 2018-05-25 2022-11-15 Applied Materials, Inc. Precision dynamic leveling mechanism with long motion capability
US11434569B2 (en) 2018-05-25 2022-09-06 Applied Materials, Inc. Ground path systems for providing a shorter and symmetrical ground path
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10790183B2 (en) 2018-06-05 2020-09-29 Applied Materials, Inc. Selective oxidation for 3D device isolation
US20200035513A1 (en) 2018-07-25 2020-01-30 Applied Materials, Inc. Processing apparatus
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
WO2020092002A1 (en) 2018-10-30 2020-05-07 Applied Materials, Inc. Methods for etching a structure for semiconductor applications
US11101174B2 (en) 2019-10-15 2021-08-24 Applied Materials, Inc. Gap fill deposition process
US11728449B2 (en) 2019-12-03 2023-08-15 Applied Materials, Inc. Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiency

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150091009A1 (en) * 2008-07-31 2015-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20140239291A1 (en) * 2013-02-27 2014-08-28 Inha-Industry Partnership Institute Metal-oxide semiconductor thin film transistors and methods of manufacturing the same

Also Published As

Publication number Publication date
US11881411B2 (en) 2024-01-23
EP3762962A1 (en) 2021-01-13
JP7239598B2 (ja) 2023-03-14
US20190279879A1 (en) 2019-09-12
KR20230079236A (ko) 2023-06-05
US20210257221A1 (en) 2021-08-19
TW201945570A (zh) 2019-12-01
JP2023063338A (ja) 2023-05-09
EP3762962A4 (en) 2021-12-08
CN111902929A (zh) 2020-11-06
JP2021515412A (ja) 2021-06-17
WO2019173006A1 (en) 2019-09-12
US10998200B2 (en) 2021-05-04
KR102536820B1 (ko) 2023-05-24
KR102702244B1 (ko) 2024-09-03
KR20200115677A (ko) 2020-10-07
SG11202008256WA (en) 2020-09-29

Similar Documents

Publication Publication Date Title
TWI707969B (zh) 用於含金屬材料的高壓退火過程
JP6204917B2 (ja) アルゴンガス希釈によるシリコン含有層を堆積するための方法
KR101670425B1 (ko) 금속 산질화물 ｔｆｔ들을 위한 캡핑 층들
US9123707B2 (en) Methods for forming a hydrogen free silicon containing dielectric film
US9502242B2 (en) Indium gallium zinc oxide layers for thin film transistors
US20110095288A1 (en) Thin film transistor and display device
TWI515793B (zh) 沉積薄膜電極與薄膜堆疊的方法
US10224432B2 (en) Surface treatment process performed on devices for TFT applications
US20080132080A1 (en) Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films
JP7573668B2 (ja) 金属含有材料の高圧アニーリングプロセス
KR20150000125U (ko) 아연 함량이 저감된 샤워헤드
US10748759B2 (en) Methods for improved silicon nitride passivation films