CN110603634A - 在高温陶瓷加热器上的集成衬底温度测量 - Google Patents

在高温陶瓷加热器上的集成衬底温度测量 Download PDF

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CN110603634A
CN110603634A CN201880029349.4A CN201880029349A CN110603634A CN 110603634 A CN110603634 A CN 110603634A CN 201880029349 A CN201880029349 A CN 201880029349A CN 110603634 A CN110603634 A CN 110603634A
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substrate
light guide
substrate support
disposed
temperature
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张轶珍
R·乔德里
J·D·平松二世
J·M·舒浩勒
H·K·帕纳瓦拉皮尔库马兰库提
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Applied Materials Inc
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Abstract

本文的实施方式提供了一种用于在诸如等离子体增强化学气相沉积(PECVD)工艺之类的等离子体增强沉积工艺期间直接地监测衬底的温度的衬底温度监测系统。在一个实施方式中，一种衬底支撑组件包括：支撑轴；衬底支撑件，所述衬底支撑件设置在所述支撑轴上；以及衬底温度监测系统，所述衬底温度监测系统用于测量待设置在所述衬底支撑件上的衬底的温度。所述衬底温度监测系统包括光纤管、耦接到所述光纤管的光导、以及围绕所述光纤管和所述光导的接合处设置的冷却组件。在本文中，所述光导的至少一部分设置在延伸穿过所述支撑轴并进入所述衬底支撑件的开口中，并且所述冷却组件在衬底处理期间维持所述光纤管处于低于约100℃的温度。

Description

在高温陶瓷加热器上的集成衬底温度测量
背景技术
技术领域
本文描述的实施方式整体涉及等离子体增强半导体器件制造工艺，并且更具体地涉及在等离子体增强化学气相沉积腔室(PECVD)中使用的衬底温度监测系统及其相关方法。
相关技术的描述
半导体器件制造涉及许多不同化学和物理工艺，使得能够在衬底上创建微型集成电路。组成集成电路的材料层通过化学气相沉积、物理气相沉积、外延生长等被形成。在集成电路的制造中，通常使用等离子体增强工艺用于沉积或蚀刻各种材料层。等离子体增强工艺相较热处理来说提供许多优点。例如，等离子体增强化学气相沉积(PECVD)允许沉积工艺以相较类似的热工艺中可实现的更低的温度和更高的沉积速率来被执行。因此，PECVD对于具有严格的热预算的半导体器件制造工艺是有利的，诸如对于极大规模集成电路或超大规模集成电路(VLSI或ULSI)器件制造的后道工序(BEOL)工艺来说。
典型地，在处理腔室内对衬底的等离子体增强处理期间，形成等离子体的离子将轰击衬底，从而引起衬底的不期望的瞬时温度增加，例如温度尖峰。在等离子体增强腔室中的衬底处理期间监测衬底温度的常规方法典型地依赖测量衬底支撑件、设置在衬底支撑件上的衬底的温度，以及从衬底支撑件的温度推断衬底的温度。不幸地，许多等离子体增强工艺的低压气氛导致在衬底与衬底支撑件之间的差的传热，这造成了两者之间的大的温差。
因此，本领域中需要的是在等离子体增强衬底工艺期间直接监测衬底的温度的设备和方法。
发明内容
本文描述的实施方式提供了一种在半导体器件制造系统中使用的衬底温度监测系统，特别地是用于在诸如等离子体增强化学气相沉积(PECVD)工艺之类的等离子体增强沉积工艺期间直接地监测衬底的温度的衬底温度监测系统、及其相关方法。
在一个实施方式中，一种衬底支撑组件包括：支撑轴；衬底支撑件，所述衬底支撑件设置在所述支撑轴上；以及衬底温度监测系统，所述衬底温度监测系统用于测量待设置在所述衬底支撑件上的衬底的温度。所述衬底温度监测系统包括光纤管、耦接到所述光纤管的光导、以及围绕所述光纤管和所述光导的接合处设置的冷却组件。在本文中，所述光导的至少一部分设置在延伸穿过所述支撑轴并进入所述衬底支撑件的开口中，并且所述冷却组件在衬底处理期间维持所述光纤管处于低于约100℃的温度。
在另一个实施方式中，一种处理腔室包括：腔室主体，所述腔室主体限定处理容积；以及衬底支撑组件，所述衬底支撑组件设置在所述处理容积中。所述衬底支撑组件包括：支撑轴；衬底支撑件，所述衬底支撑件设置在所述支撑轴上；以及衬底温度监测系统，所述衬底温度监测系统用于测量待设置在所述衬底支撑件上的衬底的温度。所述衬底温度监测系统包括光纤管、耦接到所述光纤管的光导、以及围绕所述光纤管和所述光导的接合处设置的冷却组件。在本文中，所述光导的至少一部分设置在延伸穿过所述支撑轴并进入所述衬底支撑件的开口中，并且所述冷却组件在衬底处理期间维持所述光纤管处于低于约100℃的温度。
在另一个实施方式中，一种处理衬底的方法包括：将衬底定位在设置在处理腔室的处理容积中的衬底支撑组件的衬底接收表面上；使一种或多种处理气体流入所述处理容积中；形成所述一种或多种处理气体的等离子体；使用所述光纤管测量所述衬底的温度，其中所述衬底的所述温度超过约110℃，并且其中维持所述光纤管处于低于约100℃的温度；以及在所述衬底上沉积材料层。
附图说明
为了能够详细地理解本公开的上述特征的方式，可以参考实施方式得到以上简要地概述的本公开的更特定的描述，其中一些实施方式在附图中示出。然而，应当注意，附图仅示出了本公开的典型的实施方式，并且因此不应视为对本公开的范围的限制，因为本公开可以允许其他等效实施方式。
图1是根据一个实施方式的用于实践本文阐述的方法的示例性等离子体处理腔室的示意性剖视图。
图2A是根据一个实施方式的来自图1的等离子体处理腔室的衬底支撑组件的剖视图。
图2B是图2A中所示的衬底支撑件130的一部分的近距视图。
图3是根据一个实施方式的示出处理衬底的方法的流程图。
为了清楚起见，已经尽可能地使用相同的附图标记标示各图共有的相同元件。另外，一个实施方式中的要素可以有利地适于在本文描述的其他实施方式中使用。
具体实施方式
本文描述的实施方式提供了一种在等离子体增强处理腔室中使用的衬底温度监测系统，特别地是用于在诸如等离子体增强化学气相沉积(PECVD)工艺之类的等离子体增强沉积工艺期间直接地监测衬底的温度的衬底温度监测系统、及其相关方法。
常规地，在诸如PECVD工艺之类的等离子体增强沉积工艺期间，通过测量衬底支撑件的温度、使衬底设置在该衬底支撑件上并由此推断衬底的温度来监测待处理的衬底的温度。不幸地，由于衬底支撑件与衬底之间的差的传热，因此间接地测量衬底温度通常是不准确的，或可能无法及时地反映衬底温度的变化，诸如温度尖峰。这在诸如PECVD工艺之类的工艺中尤其成问题，在所述工艺中，处理腔室的处理容积中的低压气氛造成衬底支撑件的介电材料与衬底之间的不良热导。另外，常规直接衬底温度测量系统不适用于在PECVD工艺期间达到的较高的衬底温度，例如650℃或更高，因为常规直接衬底温度测量系统的光纤部件不能承受这种高温应用。因此，本文提供的实施方式允许在相对较高的处理温度(诸如超过约100℃的温度)下对基板进行等离子体处理期间直接监测衬底的温度。具体地，本文的实施方式允许使用设置在衬底支撑组件中和/或延伸穿过衬底支撑组件的温度监测系统直接地测量设置在衬底支撑件上的衬底的非活性表面的温度。
图1是根据一个实施方式的用于实践本文阐述的方法的示例性等离子体处理腔室的示意性剖视图。可用于实践本文描述的方法的其他示例性沉积腔室包括可从加利福尼亚州圣克拉拉的应用材料公司(Applied Materials，Inc.，of Santa Clara，California)获得的系统或Ultima HDP系统、以及来自其他制造商的合适的沉积腔室。
处理腔室100包括：腔室主体102，所述腔室主体102限定处理容积104；喷头110，所述喷头110设置在处理容积104中；以及衬底支撑组件120，所述衬底支撑组件120设置在处理容积104中且面对喷头110。具有从中穿过设置的多个开口(未示出)的喷头110用于将来自气源114的处理气体分配到处理容积104中。在本文中，喷头110电耦接到电源118，诸如RF或其他AC频率电源，所述电源通过与其电容耦合来供应功率以点燃和维持处理气体的等离子体112。在其他实施方式中，处理腔室100包括电感等离子体发生器，并且等离子体通过将RF功率电感耦合到处理气体而形成。
在本文中，衬底支撑组件120包括：可移动的支撑轴106，所述可移动的支撑轴106密封地延伸穿过腔室主体102的基底壁，诸如被在腔室基部下方的区域中的波纹管(未示出)包围；以及衬底支撑件107，所述衬底支撑件107设置在支撑轴106上并与其耦接。衬底支撑件107具有第一表面(在本文中为衬底接收表面109)、以及与第一表面相对的第二表面111。在一些实施方式中，使用诸如电阻加热元件之类的加热器(未示出)中的一个或两个、以及设置在衬底支撑件107中的一个或多个冷却通道(未示出)将设置在衬底支撑件107上的衬底101维持处于期望的处理温度或在期望的处理温度的范围内。典型地，一个或多个冷却通道流体地耦接到冷却剂源(未示出)，诸如具有相对高的电阻的改性的水源、或制冷剂源。
处理容积104流体地耦接到真空源126，诸如一个或多个专用真空泵，所述真空源126维持处理容积104处于低于大气压的状况并从中排空处理气体和其他气体。典型地，升降杆系统(未示出)通过使得能够由机器人操纵器接近衬底101来促进衬底101传送进出衬底支撑件107。衬底101通过在腔室主体102的侧壁中的开口(未示出)传送进出处理容积104，所述开口在衬底处理期间被门或阀(未示出)密封。
在本文中，处理腔室100还包括耦接到所述处理腔室100的控制器190。控制器190包括可编程中央处理单元(CPU)192，所述可编程CPU 192可与存储器194以及耦接到处理系统的各种部件的大容量存储装置、输入控制单元和显示单元(未示出)(诸如电源、时钟、高速缓存、输入/输出(I/O)和衬里)一起操作以促进对衬底处理的控制。
为了促进对上述处理腔室100的控制，CPU 192可以是可在工业环境中使用的任何形式的通用计算机处理器中的一种，诸如可编程逻辑控制器(PLC)，以用于控制各种腔室和子处理器。存储器194耦接到CPU 192，并且存储器194是非暂时性的，并且可以是易于获得的存储器中的一种或多种，诸如随机存取存储器(RAM)、只读存储器(ROM)、软盘驱动器、硬盘或任何其他形式的数字存储装置(无论本地还是远程)。支持电路196耦接到CPU 192，以用于以常规的方式支持处理器。用于控制处理腔室100的操作的指令典型地作为软件例程存储在存储器194中。软件例程还可以由远离受CPU 192控制的处理腔室100的第二CPU(未示出)存储和/或执行。
存储器194是含有指令的计算机可读存储介质的形式，所述指令在由CPU 192执行时促进处理腔室100的操作。存储器194中的指令是程序产品的形式，诸如实现本公开的方法的程序。程序代码可以遵照多种不同编程语言中的任一种。在一个示例中，本公开可以被实现为存储在用于与计算机系统一起使用的计算机可读存储介质上的程序产品。程序产品的(一个或多个)程序限定实施方式的功能(包括本文所述的方法)。说明性计算机可读存储介质包括但不限于：(i)不可写存储介质(例如，在计算机内的只读存储器装置，诸如可由CD-ROM驱动器读取的CD-ROM盘、闪存存储器、ROM芯片或任何类型的固态非易失性半导体存储器)，信息永久地被存储在所述不可写存储介质上；以及(ii)可写存储介质(例如，在磁盘驱动器或硬盘驱动器内的软盘或任何类型的固态随机存取半导体存储器)，可更改的信息存储在所述可写存储介质上。当实施指示本文所述的方法的功能的计算机可读指令时，这类计算机可读存储介质是本公开的实施方式。
在本文中，处理腔室100具有与衬底支撑组件120集成的温度监测系统124，如图2A至图2B进一步示出和描述的。
图2A是根据一个实施方式的图1所示的处理腔室100的衬底支撑组件120的示意性剖视图，所述衬底支撑组件120具有与其集成的温度监测系统124。图2B是图2A的一部分的近距视图。温度监测系统124用于直接地测量设置在衬底支撑件107上的衬底101的温度。本文的温度监测系统124包括光纤管212和光导214。光纤管212使用一个或多个紧固件230(例如，使光纤管212和光导214在其相对端处拧入的螺母)耦合到光导214。光导214允许将光纤管212定位在远离衬底101的位置处并允许与之相关联的相对高的衬底处理温度。在本文中，光导214将从光纤管212发射的红外(IR)束沿着支撑轴106的长度导引或引导向衬底101的非活性表面(即，衬底与衬底支撑件107接触的表面)。IR束被衬底101的非活性表面反射并通过光导214向下引导回到光纤管212。在另一个实施方式中，光纤管212是无源光纤管，并且光导214用于将从衬底101发射的IR辐射传输或导引到无源光纤管。在本文中，光纤管212耦接到控制器190，所述控制器190基于从衬底101的非活性表面发射或被其反射的接收到的IR束而确定衬底101的温度。典型地，光导214被形成为诸如蓝宝石管之类的蓝宝石，或适合将红外光从光纤管212引导到衬底101的底部的任何其他材料。
光纤管212和光导214的接合处(诸如光纤接合处220)设置在耦接到支撑轴106的冷却组件204中。冷却组件204包括：温度监测系统适配器，诸如适配器206，用于将温度监测系统124与衬底支撑组件120集成；以及冷却夹套208，所述冷却夹套208围绕适配器206设置。在衬底处理期间，冷却组件204用于维持光纤管212的温度处于或低于110℃，这防止光纤管212因过多地或过长地暴露于来自高达550℃(并且在一些实施方式中超过约550℃)的衬底处理温度的热能而损坏。
在本文中，光导214的至少一部分设置在开口202中，所述开口202延伸穿过支撑轴106并至少部分地穿过衬底支撑件107。在一些实施方式中，开口202延伸穿过衬底支撑件107，例如穿过衬底支撑件107的衬底接收表面109。典型地，开口202进一步延伸穿过冷却组件204或部分地延伸穿过所述冷却组件204，使得连续通道从冷却组件204延伸到至少部分地穿过衬底支撑件107，并且在一些实施方式中，到达衬底支撑件的衬底接收表面109。在本文中，开口202通过靠近光纤接合处220定位的真空密封件236(例如O形环)与在处理容积104外部的大气状况隔离。光纤接合处220与处理容积104中的处理状况和与其相关联的温度隔离。
典型地，光导214的靠近衬底101的一端被定位成使得被衬底101反射和/或从所述衬底101发射的辐射(诸如IR辐射)被接收到光导214中，并且被其他表面(诸如支撑轴106和/或衬底支撑件107的表面)反射或发射的辐射不被接收到光导中。在一些实施方式中，光导214从光纤接合处220延伸到衬底支撑件107的衬底接收表面109，使得光导214的一端与衬底接收表面109齐平或正好在所述衬底接收表面109的下方。在一些实施方式中，光导214延伸到在衬底接收表面109的约1mm内，诸如在约0.5mm内，使得光导214的端部与定位在衬底支撑件107上的衬底间隔开约0mm与约1mm之间、或约0mm与约0.5mm之间、或小于约0.5mm。在一些实施方式中，衬底支撑件107还包括设置在衬底接收表面109下方或与所述衬底接收表面109齐平的窗口(未示出)，并且光导214延伸至所述窗口或在其1mm内，诸如在其0.5mm内。典型地，窗口由对IR辐射透明的耐腐蚀材料形成，所述耐腐蚀材料诸如蓝宝石、钇或者石英。在一些实施方式中，窗口与衬底支撑件107的衬底接收表面109一体地形成。将光导214的端部定位在距设置在衬底支撑件107上的衬底101的非活性表面的约1mm内(诸如在约0.5mm内)令人期望地将衬底温度测量的准确度提高到对于超过约250℃的衬底温度在约2℃内。
在一些实施方式中，温度监测系统124还包括保护护套222，所述保护护套222包围光导214并通过限制其在开口202中的横向移动来保护光导214免受破坏。典型地，护套222由与支撑轴106相同或相似的材料形成，诸如氧化铝。在一些实施方式中，光导214具有至少约380mm的长度，例如至少约400mm。在一些实施方式中，光导214具有至少约40mm的内径，诸如至少约50mm、至少约60mm，例如至少约70mm或至少约80mm。
图3是根据一个实施方式的示出处理衬底的方法的流程图。在活动301处，方法300包括将衬底定位在设置在处理腔室的处理容积中的衬底支撑件上，所述处理腔室诸如图1描述的处理腔室100，并且所述衬底支撑件诸如图1和图2A至图2B所描述的衬底支撑件。
在活动302处，方法300包括使一种或多种处理气体流入处理容积中。典型地，一种或多种处理气体包括一种或多种材料沉积前驱物气体。一种或多种材料沉积前驱物气体同时地、顺序地或以它们的组合的方式流入处理容积中。在一些实施方式中，一种或多种处理气体还包括稀释气体，例如稀有气体、N2或它们的组合。在活动303处，方法300包括点燃和维持处理气体的等离子体，
在活动304处，方法300包括使用光纤管测量衬底的温度。在本文中，衬底的温度在衬底处理期间达到或超过约110℃，诸如超过约160℃、超过约200℃、超过约250℃、超过约300℃、超过约350℃、超过约400℃、超过约450℃、超过约500℃，例如超过约550℃。典型地，维持光纤管处于低于约100℃的温度下，以防止在方法300期间对光纤管造成损坏。
在活动305处，方法300包括在衬底上沉积材料层。在本文中，材料层包括在衬底的活性表面上或与衬底的活性表面上的一种或多种材料沉积前驱物气体的反应产物。在一些实施方式中，方法300还包括维持处理容积处于低于约10托的处理压力。
在一些实施方式中，测量衬底的温度包括引导由衬底的非活性表面发射的和/或从衬底的非活性表面反射的IR辐射穿过耦接到光纤管的光导。在一些实施方式中，维持光纤管处于低于约100℃的温度包括维持光导和光纤管的接合处处于低于约100℃的温度。在一些实施方式中，方法300还包括：从光纤管发射IR束，并将IR束通过光导引向衬底的非活性表面。
在一些实施方式中，测量衬底的温度包括将由光纤管接收的光学信息(诸如由衬底反射和/或由衬底发射的IR辐射)传达到耦接到处理腔室的控制器。在一些实施方式中，所述方法还包括监测衬底的温度并且基于所述温度而改变一个或多个衬底处理状况。例如，在一些实施方式中，所述方法包括响应于确定衬底的温度超过阈值而改变一个或多个衬底处理状况。在一些实施方式中，阈值是指示尖峰的温度的百分比增加，诸如超过典型平均衬底处理温度的约20％，诸如超过典型平均衬底处理温度的约30％，或指示衬底温度的不期望的尖峰的其他阈值。在一些实施方式中，改变一个或多个处理状况包括改变以下项中的一个：处理气体流率、衬底处理时间、处理容积的处理压力、衬底支撑件的温度、提供给喷头的功率、停止衬底的处理、开始用于衬底的新处理序列、或它们的组合。在一些实施方式中，监测衬底的温度包括收集衬底温度信息，所述衬底温度信息可存储在系统控制器或与其通信的工厂级软件上，例如用于统计分析或统计工艺控制(SPC)目的。在一些实施方式中，所述方法还包括：诸如当衬底的温度超过阈值时，使用被设计为将失控事件传达给期望的用户的任何形式的警报(包括视觉和音频警报)，向用户警告失控事件。
本文描述的实施方式提供了在与PECVD工艺相关联的高温处理环境中(诸如550℃或更高的温度下)对衬底温度的直接测量和监测。直接监测衬底温度有益地实现改善的工艺控制方法并且提供了可用于确保稳定和可重复的处理系统性能的数据。
尽管前述内容针对的是具体实施方式，但是在不脱离本公开的基本范围的情况下，可以设想本公开的其它和进一步实施方式，并且本公开的范围由所附权利要求书确定。

Claims (15)

1.一种衬底支撑组件，包括：
支撑轴；
衬底支撑件，所述衬底支撑件设置在所述支撑轴上；以及
衬底温度监测系统，所述衬底温度监测系统用于测量待设置在所述衬底支撑件上的衬底的温度，所述衬底温度监测系统包括：
光纤管；
光导，所述光导耦接到所述光纤管，其中所述光导的至少一部分设置在开口中，
所述开口延伸穿过所述支撑轴并进入所述衬底支撑件；以及
冷却组件，所述冷却组件围绕所述光纤管和所述光导的接合处设置，其中所述冷却组件在衬底处理期间维持所述光纤管处于低于约100℃的温度。
2.如权利要求1所述的衬底支撑组件，其中所述光导是蓝宝石管。
3.如权利要求1所述的衬底支撑组件，其中所述衬底温度监测系统还包括：
护套，所述护套设置在所述开口中，以通过限制所述护套的横向移动来保护所述光导免受破坏。
4.如权利要求1所述的衬底支撑组件，其中所述光导具有至少约400mm的长度和至少约40mm的内径。
5.如权利要求1所述的衬底支撑组件，其中当衬底设置在所述衬底支撑件上时，所述光导的一端在衬底的1mm内。
6.如权利要求1所述的衬底支撑组件，其中所述光纤管和所述光导的所述接合处通过真空密封件与所述开口隔离。
7.如权利要求1所述的衬底支撑组件，其中所述衬底支撑件还包括窗口，所述窗口与衬底接收表面齐平地定位或定位在所述衬底接收表面的下方。
8.一种处理腔室，包括：
腔室主体，所述腔室主体限定处理容积；以及
衬底支撑组件，所述衬底支撑组件设置在所述处理容积中，所述衬底支撑组件包括：
支撑轴；
衬底支撑件，所述衬底支撑件设置在所述支撑轴上；
衬底温度监测系统，所述衬底温度监测系统用于测量待设置在所述衬底支撑件上的衬底的温度，所述衬底温度监测系统包括：
光纤管；
光导，所述光导耦接到所述光纤管，其中所述光导的至少一部分设置在开口中，所述开口延伸穿过所述支撑轴并进入所述衬底支撑件；以及
冷却组件，所述冷却组件围绕所述光纤管和所述光导的接合处设置，其中所述冷却组件在衬底处理期间维持所述光纤管处于低于约100℃的温度。
9.如权利要求8所述的衬底支撑组件，其中所述光导是蓝宝石管。
10.如权利要求8所述的衬底支撑组件，其中所述光导具有至少约400mm的长度和至少约40mm的内径。
11.如权利要求8所述的衬底支撑组件，其中当衬底设置在所述衬底支撑件上时，所述光导的一端在衬底的1mm内。
12.如权利要求8所述的衬底支撑组件，其中所述光纤管和所述光导的所述接合处通过真空密封件与所述开口隔离。
13.如权利要求8所述的衬底支撑组件，其中所述衬底支撑件还包括窗口，所述窗口与衬底接收表面齐平地定位或定位在所述衬底接收表面的下方。
14.一种处理衬底的方法，包括：
将衬底定位在设置在处理腔室的处理容积中的衬底支撑组件的衬底接收表面上，其中所述衬底支撑组件包括：
支撑轴；
衬底支撑件，所述衬底支撑件设置在所述支撑轴上；
衬底温度监测系统，所述衬底温度监测系统用于测量待设置在所述衬底支撑件上的衬底的温度，所述衬底温度监测系统包括：
光纤管；
光导，所述光导耦接到所述光纤管，其中所述光导的至少一部分设置在开口中，所述开口延伸穿过所述支撑轴并进入所述衬底支撑件；以及
冷却组件，所述冷却组件围绕所述光纤管和所述光导的接合处设置，其中所述冷却组件在衬底处理期间维持所述光纤管处于低于约100℃的温度；
使一种或多种处理气体流入所述处理容积中；
形成所述一种或多种处理气体的等离子体；
使用所述光纤管测量所述衬底的温度，其中所述衬底的所述温度超过约110℃，并且其中维持所述光纤管处于低于约100℃的温度；以及
在所述衬底上沉积材料层。
15.如权利要求14所述的方法，其中测量所述衬底的所述温度包括：将由所述光纤管接收的光学信息传达到耦接到所述处理腔室的控制器。
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