TWI648824B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI648824B
TWI648824B TW106131019A TW106131019A TWI648824B TW I648824 B TWI648824 B TW I648824B TW 106131019 A TW106131019 A TW 106131019A TW 106131019 A TW106131019 A TW 106131019A TW I648824 B TWI648824 B TW I648824B
Authority
TW
Taiwan
Prior art keywords
transistor
semiconductor device
insulating layer
electrode
layer
Prior art date
Application number
TW106131019A
Other languages
English (en)
Chinese (zh)
Other versions
TW201810537A (zh
Inventor
加藤清
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201810537A publication Critical patent/TW201810537A/zh
Application granted granted Critical
Publication of TWI648824B publication Critical patent/TWI648824B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
TW106131019A 2010-07-02 2011-06-28 半導體裝置 TWI648824B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-152021 2010-07-02
JP2010152021 2010-07-02

Publications (2)

Publication Number Publication Date
TW201810537A TW201810537A (zh) 2018-03-16
TWI648824B true TWI648824B (zh) 2019-01-21

Family

ID=45399049

Family Applications (5)

Application Number Title Priority Date Filing Date
TW106131019A TWI648824B (zh) 2010-07-02 2011-06-28 半導體裝置
TW103137223A TWI540713B (zh) 2010-07-02 2011-06-28 半導體裝置
TW105115525A TWI575721B (zh) 2010-07-02 2011-06-28 半導體裝置
TW100122626A TWI545739B (zh) 2010-07-02 2011-06-28 半導體裝置
TW105142262A TWI607557B (zh) 2010-07-02 2011-06-28 半導體裝置

Family Applications After (4)

Application Number Title Priority Date Filing Date
TW103137223A TWI540713B (zh) 2010-07-02 2011-06-28 半導體裝置
TW105115525A TWI575721B (zh) 2010-07-02 2011-06-28 半導體裝置
TW100122626A TWI545739B (zh) 2010-07-02 2011-06-28 半導體裝置
TW105142262A TWI607557B (zh) 2010-07-02 2011-06-28 半導體裝置

Country Status (4)

Country Link
US (7) US8378403B2 (enExample)
JP (9) JP5687960B2 (enExample)
TW (5) TWI648824B (enExample)
WO (1) WO2012002186A1 (enExample)

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TWI671910B (zh) 2012-09-24 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置
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