JP6895794B2 - 表示装置、表示モジュールおよび電子機器 - Google Patents
表示装置、表示モジュールおよび電子機器 Download PDFInfo
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- JP6895794B2 JP6895794B2 JP2017085951A JP2017085951A JP6895794B2 JP 6895794 B2 JP6895794 B2 JP 6895794B2 JP 2017085951 A JP2017085951 A JP 2017085951A JP 2017085951 A JP2017085951 A JP 2017085951A JP 6895794 B2 JP6895794 B2 JP 6895794B2
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- transistor
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- display
- oxide semiconductor
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Description
本実施の形態では、本発明の一態様の表示装置及び当該表示装置の作製方法について、図1乃至図16を用いて説明を行う。
まず、表示装置の構成について、図15を用いて説明する。図15に示す表示装置500は、画素部502と、画素部502の外側に配置されるゲートドライバ回路部504a、504bと、画素部502の外側に配置されるソースドライバ回路部506と、を有する。
画素部502は、X行(Xは2以上の自然数)、Y列(Yは2以上の自然数)に配置される画素10(1,1)乃至(X,Y)を有する。また、画素10(1,1)乃至(X,Y)は、2つの表示素子を有し、当該2つの表示素子は、それぞれ異なる機能を有する。2つの表示素子の一方は、入射する光を反射する機能を有し、2つの表示素子の他方は、光を発する機能を有する。なお、当該2つの表示素子の詳細については、後述する。
ゲートドライバ回路部504a、504b及びソースドライバ回路部506の一部または全部は、画素部502と同一基板上に形成されていることが望ましい。これにより、部品数や端子数を減らすことが出来る。ゲートドライバ回路部504a、504b及びソースドライバ回路部506の一部または全部が画素部502と同一基板上に形成されない場合には、COG(Chip On Glass)またはTAB(Tape Automated Bonding)によって、別途用意された駆動回路基板(例えば、単結晶半導体膜または多結晶半導体膜で形成された駆動回路基板)を、表示装置500に形成してもよい。
ソースドライバ回路部506は、画像信号を元に画素10(1,1)乃至(X,Y)に書き込むデータ信号を生成する機能、データ信号が与えられる配線(信号線SL_L[n]、信号線SL_L[n+1]、信号線SL_L[Y]、信号線SL_E1[n]、信号線SL_E1[n+1]、信号線SL_E1[Y]、信号線SL_E2[n]、信号線SL_E2[n+1]、及び信号線SL_E2[Y])の電位を制御する機能、または初期化信号を供給する機能を有する。なお、上記において、nはY以下の自然数を表す。
また、画素10(1,1)乃至(X,Y)は、走査線GL_L[m]、走査線GL_L[m+1]、及び走査線GL_L[X]の一つを介してパルス信号が入力され、信号線SL_L[n]、信号線SL_L[n+1]、信号線SL_L[Y]、信号線SL_E1[n]、信号線SL_E1[n+1]、信号線SL_E1[Y]、信号線SL_E2[n]、信号線SL_E2[n+1]、及び信号線SL_E2[Y])の一つを介してデータ信号が入力される。
表示装置500には、外部回路508が接続される。なお、表示装置500が外部回路508を有する構成としてもよい。
次に、画素10(m,n)の回路構成について、図16を用いて説明する。
表示素子12は、光の反射または光の透過を制御する機能を有する。特に、表示素子12を光の反射を制御する、所謂反射型の表示素子とすると好適である。表示素子12を反射型の表示素子とすることで、外光を用いて表示を行うことが可能となるため、表示装置の消費電力を抑制することができる。例えば、表示素子12としては、反射膜と液晶素子と偏光板とを組み合わせた構成、またはマイクロ・エレクトロ・メカニカル・システム(MEMS)を用いる構成等とすればよい。
表示素子14は、光を発する機能、すなわち発光する機能を有する。よって、表示素子14を、発光素子として読み替えてもよい。例えば、表示素子14としては、エレクトロルミネッセンス素子(EL素子ともいう)を用いる構成、または発光ダイオードを用いる構成等とすればよい。
次に、表示素子12及び表示素子14の駆動方法について、図16を用いて説明する。なお、以下の説明においては、表示素子12に液晶素子を用い、表示素子14(表示素子14B、表示素子14G、表示素子14R、及び表示素子14W)に発光素子を用いる構成とする。
画素10(m,n)において、トランジスタMA5のゲート電極は、走査線GL_L[m]に電気的に接続される。また、トランジスタMA5のソース電極またはドレイン電極の一方は信号線SL_L[n]に電気的に接続され、他方は表示素子12の一対の電極の一方に電気的に接続される。トランジスタMA5は、オン状態とオフ状態とを切り替えることにより、データ信号のデータの書き込みを制御する機能を有する。
画素10(m,n)において、トランジスタMA1のゲート電極は、走査線GL_E1[m]に電気的に接続される。また、トランジスタMA1のソース電極及びドレイン電極の一方は、信号線SL_E1[n]に電気的に接続され、他方はトランジスタMB1のゲート電極及び配線TCOMに電気的に接続される。トランジスタMA1は、オン状態とオフ状態とを切り替えることにより、データ信号のデータの書き込みを制御する機能を有する。
次に、表示素子12及び表示素子14の画素10(m,n)における表示領域について、図14を用いて説明する。
次に、表示装置500が有する画素10の断面構造の一例について、図1を用いて説明する。
次に、図1に示す表示装置500が有する画素10の作製方法について、図3乃至図13を用いて説明を行う。
次に、図1乃至図13、図15、及び図16に例示した表示装置500及び表示装置500の作製方法に記載の各構成要素について、以下説明を行う。
基板30、80、90として、作製工程中の熱処理に耐えうる程度の耐熱性を有する材料を用いることができる。
導電膜31、36、38、42、46a、46b、46c、52a、52b、52c、52d、52e、58a、58b、64、70、78、92としては、導電性を有する金属膜、可視光を反射する機能を有する導電膜、または可視光を透過する機能を有する導電膜を用いればよい。
絶縁膜32、34、40、44、48、54、60、62、68、72としては、絶縁性の無機材料、絶縁性の有機材料、または絶縁性の無機材料と絶縁性の有機材料とを含む絶縁性の複合材料を用いることができる。
酸化物半導体膜50a、50b、56は、In−M−Zn酸化物(MはAl、Ga、Y、またはSn)等の酸化物で形成される。また、酸化物半導体膜50a、50b、56として、In−Ga酸化物、In−Zn酸化物を用いてもよい。なお、酸化物半導体膜50a、50b、56に用いることのできる酸化物半導体膜については、実施の形態3にて詳細に説明を行う。
液晶層96としては、サーモトロピック液晶、低分子液晶、高分子液晶、高分子分散型液晶、強誘電性液晶、反強誘電性液晶等が挙げられる。または、コレステリック相、スメクチック相、キュービック相、カイラルネマチック相、等方相等を示す液晶材料を用いてもよい。または、ブルー相を示す液晶材料を用いてもよい。
EL層76としては、少なくとも発光材料を有する。当該発光材料としては、有機化合物、または量子ドットなどの無機化合物が挙げられる。
配向膜94、98としては、ポリイミド樹脂等を含む材料を用いることができる。例えば、ポリイミド樹脂等を含む材料が、所定の方向に配向するようにラビング処理または光配向処理を行えばよい。
着色膜69は、所謂カラーフィルタとしての機能を有する。着色膜69としては、所定の色の光を透過する材料(例えば、青色の光を透過する材料、緑色の光を透過する材料、赤色の光を透過する材料、黄色の光を透過する材料または白色の光を透過する材料など)を用いればよい。
構造体74としては、有機材料、無機材料、または有機材料と無機材料との複合材料を含む絶縁性材料を用いることができる。当該絶縁性材料としては、絶縁膜32、34、40、44、48、54、60、62、68、72に列挙した材料を用いることができる。
封止材82としては、無機材料、有機材料、または無機材料と有機材料との複合材料等を用いることができる。上述の有機材料としては、例えば、熱溶融性の樹脂または熱硬化性の樹脂を含む有機材料が挙げられる。また、封止材82としては、樹脂材料を含む接着剤(反応硬化型の接着剤、光硬化型接着剤、熱硬化型接着剤、嫌気型接着剤等)を用いてもよい。また、上述の樹脂材料としては、エポキシ系樹脂、アクリル系樹脂、シリコーン系樹脂、フェノール系樹脂、ポリイミド系樹脂、イミド系樹脂、PVC(ポリビニルクロライド)系樹脂、PVB(ポリビニルブチラル)系樹脂、EVA(エチレンビニルアセテート)系樹脂等が挙げられる。
表示装置500は、基板80及び基板90のいずれか一方または双方に接して機能膜を有していてもよい。当該機能膜としては、偏光板、位相差板、拡散フィルム、反射防止フィルムまたは集光フィルム等を用いることができる。また、機能膜として、ゴミの付着を抑制する帯電防止膜、汚れを付着しにくくする撥水性の膜、使用に伴う傷の発生を抑制するハードコート膜等を用いることができる。
表示装置500は、隣接する画素間に光の透過を抑制する遮光膜を有していてもよい。当該遮光膜の材料としては、金属材料、または黒色顔料を含んだ有機樹脂材料等が挙げられる。
本実施の形態においては、本発明の一態様の表示装置に入力装置を取り付ける構成について、図17乃至図20を用いて説明を行う。
なお、本実施の形態において、表示装置500と、入力装置とを合わせたタッチパネル2000について説明する。また、入力装置の一例として、タッチセンサを用いる場合について説明する。
次に、図18を用いて、タッチセンサ2595の詳細について説明する。図18は、図17(B)に示す一点鎖線X1−X2間の断面図に相当する。
次に、図19を用いて、タッチパネル2000の詳細について説明する。図19は、図17(A)に示す一点鎖線X3−X4間の断面図に相当する。
次に、タッチパネルの駆動方法の一例について、図20を用いて説明を行う。
本実施の形態においては、本発明の一態様の酸化物半導体膜について、図21及び図22を用いて説明を行う。
以下に、本発明の一態様に係る酸化物半導体膜について説明する。
酸化物半導体膜は、単結晶酸化物半導体膜と、それ以外の非単結晶酸化物半導体膜と、に分けられる。非単結晶酸化物半導体としては、例えば、CAAC−OS(c−axis aligned crystalline oxide semiconductor)、多結晶酸化物半導体、nc−OS(nanocrystalline oxide semiconductor)、擬似非晶質酸化物半導体(a−like OS:amorphous−like oxide semiconductor)および非晶質酸化物半導体などがある。
次に、図21(A)、図21(B)、および図21(C)を用いて、本発明の一態様に係る酸化物半導体膜が有するインジウム、元素M及び亜鉛の原子数比の好ましい範囲について説明する。なお、図21(A)、図21(B)、および図21(C)には、酸素の原子数比については記載しない。また、酸化物半導体膜が有するインジウム、元素M、及び亜鉛の原子数比のそれぞれの項を[In]、[M]、および[Zn]とする。
続いて、上記酸化物半導体膜をトランジスタに用いる場合について説明する。
次に、酸化物半導体膜中における各不純物の影響について説明する。
続いて、上記説明した酸化物半導体膜を2層の積層構造、または3層の積層構造とした場合について説明する。
本実施の形態では、本発明の一態様の表示装置を有する表示モジュール及び電子機器について、図23乃至図25を用いて説明を行う。
図23に示す表示モジュール8000は、上部カバー8001と下部カバー8002との間に、FPC8003が接続されたタッチパネル8004、FPC8005が接続された表示パネル8006、フレーム8009、プリント基板8010、バッテリ8011を有する。
図24(A)乃至図24(E)、及び図25(A)乃至図25(E)は、電子機器を示す図である。これらの電子機器は、筐体9000、表示部9001、カメラ9002、スピーカ9003、操作キー9005(電源スイッチ、又は操作スイッチを含む)、接続端子9006、センサ9007(力、変位、位置、速度、加速度、角速度、回転数、距離、光、液、磁気、温度、化学物質、音声、時間、硬度、電場、電流、電圧、電力、放射線、流量、湿度、傾度、振動、におい又は赤外線を測定する機能を含むもの)、マイクロフォン9008等を有する。
次に、本実施例で作製した表示装置の表示結果を図26(A)(B)に示す。なお、図26(A)が、発光素子であるOLED素子を用いた場合の表示モード(カラー)における表示結果であり、図26(B)が、反射型LCD素子を用いた場合の表示モード(白黒)における表示結果である。
GL_E2 走査線
I1 絶縁膜
I2 絶縁膜
MA1 トランジスタ
MA2 トランジスタ
MA3 トランジスタ
MA4 トランジスタ
MA5 トランジスタ
MB1 トランジスタ
MB2 トランジスタ
MB3 トランジスタ
MB4 トランジスタ
S1 酸化物半導体膜
S2 酸化物半導体膜
S3 酸化物半導体膜
SL_E1 信号線
SL_E2 信号線
Tr1 トランジスタ
Tr2 トランジスタ
Tr3 トランジスタ
10 画素
12 表示素子
12d 表示領域
14 表示素子
14B 表示素子
14Bd 表示領域
14d 表示領域
14G 表示素子
14Gd 表示領域
14R 表示素子
14Rd 表示領域
14Wd 表示領域
16 容量素子
30 基板
31 導電膜
32 絶縁膜
34 絶縁膜
36 導電膜
38 導電膜
40 絶縁膜
42 導電膜
44 絶縁膜
46a 導電膜
46b 導電膜
46c 導電膜
48 絶縁膜
50a 酸化物半導体膜
50b 酸化物半導体膜
51 開口部
52a 導電膜
52b 導電膜
52c 導電膜
52d 導電膜
52e 導電膜
54 絶縁膜
56 酸化物半導体膜
58a 導電膜
58b 導電膜
60 絶縁膜
62 絶縁膜
63 開口部
64 導電膜
68 絶縁膜
69 着色膜
70 導電膜
72 絶縁膜
74 構造体
76 EL層
78 導電膜
80 基板
82 封止材
90 基板
92 導電膜
94 配向膜
96 液晶層
98 配向膜
500 表示装置
502 画素部
504a ゲートドライバ回路部
504b ゲートドライバ回路部
506 ソースドライバ回路部
508 外部回路
2000 タッチパネル
2509 FPC
2511 配線
2519 端子
2569 反射防止層
2590 基板
2591 電極
2592 電極
2593 絶縁層
2594 配線
2595 タッチセンサ
2597 接着層
2598 配線
2599 接続層
2601 パルス電圧出力回路
2602 電流検出回路
2603 容量
2621 電極
2622 電極
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8009 フレーム
8010 プリント基板
8011 バッテリ
9000 筐体
9001 表示部
9002 カメラ
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 操作ボタン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9100 テレビジョン装置
9101 携帯情報端末
9102 携帯情報端末
9103 携帯情報端末
9104 携帯情報端末
9200 携帯情報端末
9201 携帯情報端末
9202 携帯情報端末
Claims (9)
- 第1の表示素子と、第2の表示素子と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、を有し、
前記第1の表示素子は、液晶層を有し、
前記第2の表示素子は、発光層を有し、
前記第1のトランジスタは、前記第1の表示素子を選択する機能を有し、
前記第2のトランジスタは、前記第2の表示素子を選択する機能を有し、
前記第3のトランジスタは、前記第2の表示素子の駆動を制御する機能を有し、
前記第1のトランジスタと、前記第2のトランジスタとは、同一表面上に形成され、
前記第3のトランジスタは、前記第1のトランジスタ及び前記第2のトランジスタよりも上方に形成され、且つ前記第2のトランジスタが有するソース電極またはドレイン電極のいずれか一方をゲート電極として有する、表示装置。 - 第1の表示素子と、第2の表示素子と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、容量素子と、を有し、
前記第1の表示素子は、第1の画素電極と、液晶層と、を有し、
前記第2の表示素子は、第2の画素電極と、発光層と、を有し、
前記第1のトランジスタは、前記第1の画素電極と電気的に接続され、
前記第2のトランジスタは、前記第2の画素電極と電気的に接続され、
前記第3のトランジスタは、前記第2の表示素子と電気的に接続され、
前記容量素子は、一対の電極を有し、
前記一対の電極の一方は、容量電極を有し、
前記一対の電極の他方は、前記第1の画素電極を有し、
前記第1のトランジスタと、前記第2のトランジスタとは、同一表面上に形成され、
前記第3のトランジスタは、前記第1のトランジスタ及び前記第2のトランジスタよりも上方に形成され、且つ前記第2のトランジスタが有するソース電極またはドレイン電極のいずれか一方をゲート電極として有する、表示装置。 - 請求項2において、
前記容量電極は、前記第1のトランジスタ及び前記第2のトランジスタのいずれか一方または双方の下方に配置される、表示装置。 - 請求項2において、
前記第1の画素電極は、光を反射する機能を有し、
前記第2の画素電極は、光を透過する機能を有する、表示装置。 - 請求項2または請求項4において、
前記第1の画素電極は、銀及びアルミニウムのいずれか一方または双方を有し、
前記第2の画素電極は、インジウム、亜鉛、錫、及びシリコンの中から選ばれるいずれか一つまたは複数を有する、表示装置。 - 請求項1または請求項2において、
前記第1のトランジスタ、前記第2のトランジスタ、及び前記第3のトランジスタのいずれか一つまたは複数は、半導体層に酸化物半導体を有する、表示装置。 - 請求項1または請求項2において、
前記発光層は、前記液晶層側に向けて光を発する機能を有する、表示装置。 - 請求項1乃至請求項7のいずれか一項に記載の表示装置と、
タッチセンサと、を有する、表示モジュール。 - 請求項1乃至請求項7のいずれか一項に記載の表示装置、または請求項8に記載の表示モジュールと、
操作キーまたはバッテリと、を有する、電子機器。
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JP2018005004A (ja) * | 2016-07-04 | 2018-01-11 | 株式会社ジャパンディスプレイ | 表示装置 |
US10475869B2 (en) | 2016-08-23 | 2019-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device including display element and transistor |
CN106873218B (zh) * | 2017-02-22 | 2020-05-01 | 鄂尔多斯市源盛光电有限责任公司 | 一种显示装置及其驱动方法 |
WO2020039291A1 (ja) * | 2018-08-21 | 2020-02-27 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
KR20200042660A (ko) * | 2018-10-16 | 2020-04-24 | 현대자동차주식회사 | 차량 디스플레이 제어 장치, 그를 포함한 시스템 및 그 방법 |
CN114038330B (zh) * | 2021-11-30 | 2023-06-30 | 武汉华星光电半导体显示技术有限公司 | 一种可折叠显示模组和可折叠显示装置 |
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JP2002196706A (ja) * | 1996-11-29 | 2002-07-12 | Sanyo Electric Co Ltd | 単純マトリックス方式の表示装置 |
JP3767264B2 (ja) | 1999-08-25 | 2006-04-19 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
WO2001091098A1 (fr) | 2000-05-24 | 2001-11-29 | Hitachi, Ltd. | Terminal portable et afficheur commutable entre couleur et noir-et-blanc |
JP2002196702A (ja) | 2000-12-25 | 2002-07-12 | Sony Corp | 画像表示装置 |
JP4202030B2 (ja) | 2001-02-20 | 2008-12-24 | シャープ株式会社 | 表示装置 |
JP4043864B2 (ja) | 2001-09-06 | 2008-02-06 | シャープ株式会社 | 表示装置及びその駆動方法 |
JP4176400B2 (ja) | 2001-09-06 | 2008-11-05 | シャープ株式会社 | 表示装置 |
JP3898012B2 (ja) | 2001-09-06 | 2007-03-28 | シャープ株式会社 | 表示装置 |
US7248235B2 (en) | 2001-09-14 | 2007-07-24 | Sharp Kabushiki Kaisha | Display, method of manufacturing the same, and method of driving the same |
JP2003228304A (ja) | 2002-01-31 | 2003-08-15 | Toyota Industries Corp | 表示装置 |
TW544944B (en) | 2002-04-16 | 2003-08-01 | Ind Tech Res Inst | Pixel element structure of sunlight-readable display |
JP4122828B2 (ja) | 2002-04-30 | 2008-07-23 | 日本電気株式会社 | 表示装置及びその駆動方法 |
US20060072047A1 (en) | 2002-12-06 | 2006-04-06 | Kanetaka Sekiguchi | Liquid crystal display |
JP3852931B2 (ja) | 2003-03-26 | 2006-12-06 | 株式会社東芝 | 発光表示装置 |
JP2007232882A (ja) | 2006-02-28 | 2007-09-13 | Casio Comput Co Ltd | 表示装置及び電子機器 |
JP3993221B2 (ja) * | 2006-11-20 | 2007-10-17 | シャープ株式会社 | 表示装置 |
US9397308B2 (en) | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
TWI393950B (zh) | 2009-01-08 | 2013-04-21 | Au Optronics Corp | 半穿反型顯示面板 |
WO2010090008A1 (ja) * | 2009-02-04 | 2010-08-12 | シャープ株式会社 | 表示装置 |
JP2011112723A (ja) * | 2009-11-24 | 2011-06-09 | Sony Corp | 表示装置およびその駆動方法ならびに電子機器 |
US9349325B2 (en) | 2010-04-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5933897B2 (ja) | 2011-03-18 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8981367B2 (en) | 2011-12-01 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
JP2013221965A (ja) | 2012-04-13 | 2013-10-28 | Seiko Epson Corp | 電気光学装置 |
US8860022B2 (en) | 2012-04-27 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
JP6518890B2 (ja) | 2014-03-31 | 2019-05-29 | 株式会社Joled | 表示装置および電子機器 |
WO2016012900A1 (en) | 2014-07-25 | 2016-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
WO2017081586A1 (en) | 2015-11-13 | 2017-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device, input/output device, and data processing device |
CN108475699B (zh) | 2015-12-28 | 2021-11-16 | 株式会社半导体能源研究所 | 半导体装置、包括该半导体装置的显示装置 |
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