JP5776728B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5776728B2 JP5776728B2 JP2013116647A JP2013116647A JP5776728B2 JP 5776728 B2 JP5776728 B2 JP 5776728B2 JP 2013116647 A JP2013116647 A JP 2013116647A JP 2013116647 A JP2013116647 A JP 2013116647A JP 5776728 B2 JP5776728 B2 JP 5776728B2
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- Japan
- Prior art keywords
- electrode
- contact
- endothermic layer
- heat
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
3:コンタクト電極
4:絶縁層
5:ゲート電極
6、106:吸熱層
7:ソース電極
12:ソース領域
13:コンタクト領域
14:ボディ領域
15:ドリフト層
16:ドレイン電極
17:半導体基板
19:チャネル
21:ハンダ
22:電極板
41:ハンダ材
42:母材
103:コンタクト/ソース電極
Claims (4)
- 半導体プロセスによって半導体基板上に形成されており、半導体基板内に形成されている素子と導通している第1電極と、
半導体プロセスによって半導体基板上に形成されており、第1電極と接している導電性の吸熱層と、
半導体プロセスによって半導体基板上に形成されており、第1電極又は吸熱層と接しているとともに、他の金属導電体にハンダ付けされている第2電極と、
を備えており、
第1電極は吸熱層よりも仕事関数あるいはコンタクト抵抗率が小さく、
吸熱層は第1電極よりも融解熱が大きく、
第2電極は吸熱層よりもハンダ接合性が高く、
吸熱層は第1電極よりも融点が低い、
ことを特徴とする半導体装置。 - 第1電極と第2電極が同じ材料で作られていることを特徴とする請求項1に記載の半導体装置。
- 吸熱層はベリリウムで作られていることを特徴とする請求項1又は2に記載の半導体装置。
- 第1電極と吸熱層と第2電極が半導体基板に近い方からこの順で積層されていることを特徴とする請求項1から3のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013116647A JP5776728B2 (ja) | 2013-06-03 | 2013-06-03 | 半導体装置 |
US14/284,801 US20140353834A1 (en) | 2013-06-03 | 2014-05-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013116647A JP5776728B2 (ja) | 2013-06-03 | 2013-06-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014236104A JP2014236104A (ja) | 2014-12-15 |
JP5776728B2 true JP5776728B2 (ja) | 2015-09-09 |
Family
ID=51984230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013116647A Expired - Fee Related JP5776728B2 (ja) | 2013-06-03 | 2013-06-03 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20140353834A1 (ja) |
JP (1) | JP5776728B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6926869B2 (ja) * | 2017-09-13 | 2021-08-25 | 富士電機株式会社 | 半導体装置 |
US10957644B2 (en) * | 2018-02-02 | 2021-03-23 | Micron Technology, Inc. | Integrated structures with conductive regions having at least one element from group 2 of the periodic table |
JP7470070B2 (ja) | 2021-02-18 | 2024-04-17 | 株式会社東芝 | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000174195A (ja) * | 1998-12-04 | 2000-06-23 | Toyota Central Res & Dev Lab Inc | パワーモジュール |
JP2004152905A (ja) * | 2002-10-29 | 2004-05-27 | Kyocera Corp | 冷却素子およびそれを用いた発熱素子デバイス |
JP4297698B2 (ja) * | 2003-02-26 | 2009-07-15 | 三洋電機株式会社 | 電池パック及び非水電解液二次電池を電源とする電子機器 |
JP2008147590A (ja) * | 2006-12-13 | 2008-06-26 | Denso Corp | 半導体装置 |
US8314462B2 (en) * | 2009-07-28 | 2012-11-20 | Cree, Inc. | Semiconductor devices including electrodes with integrated resistances |
US20120153303A1 (en) * | 2009-09-02 | 2012-06-21 | Panasonic Corporation | Semiconductor element and method for manufacturing same |
WO2012002186A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2013
- 2013-06-03 JP JP2013116647A patent/JP5776728B2/ja not_active Expired - Fee Related
-
2014
- 2014-05-22 US US14/284,801 patent/US20140353834A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2014236104A (ja) | 2014-12-15 |
US20140353834A1 (en) | 2014-12-04 |
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