JP5687960B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5687960B2
JP5687960B2 JP2011142710A JP2011142710A JP5687960B2 JP 5687960 B2 JP5687960 B2 JP 5687960B2 JP 2011142710 A JP2011142710 A JP 2011142710A JP 2011142710 A JP2011142710 A JP 2011142710A JP 5687960 B2 JP5687960 B2 JP 5687960B2
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Japan
Prior art keywords
transistor
insulating layer
layer
circuit
memory cell
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Expired - Fee Related
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JP2011142710A
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English (en)
Japanese (ja)
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JP2012033906A5 (enExample
JP2012033906A (ja
Inventor
加藤　清
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011142710A priority Critical patent/JP5687960B2/ja
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Publication of JP2012033906A5 publication Critical patent/JP2012033906A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011142710A 2010-07-02 2011-06-28 半導体装置 Expired - Fee Related JP5687960B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011142710A JP5687960B2 (ja) 2010-07-02 2011-06-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010152021 2010-07-02
JP2010152021 2010-07-02
JP2011142710A JP5687960B2 (ja) 2010-07-02 2011-06-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014202941A Division JP5841647B2 (ja) 2010-07-02 2014-10-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2012033906A JP2012033906A (ja) 2012-02-16
JP2012033906A5 JP2012033906A5 (enExample) 2014-04-10
JP5687960B2 true JP5687960B2 (ja) 2015-03-25

Family

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Family Applications (9)

Application Number Title Priority Date Filing Date
JP2011142710A Expired - Fee Related JP5687960B2 (ja) 2010-07-02 2011-06-28 半導体装置
JP2014202941A Expired - Fee Related JP5841647B2 (ja) 2010-07-02 2014-10-01 半導体装置
JP2015222688A Expired - Fee Related JP6027213B2 (ja) 2010-07-02 2015-11-13 半導体装置
JP2016201915A Expired - Fee Related JP6268255B2 (ja) 2010-07-02 2016-10-13 半導体装置
JP2017247794A Withdrawn JP2018078317A (ja) 2010-07-02 2017-12-25 半導体装置
JP2019101570A Active JP6934912B2 (ja) 2010-07-02 2019-05-30 半導体装置
JP2021136245A Active JP7238051B2 (ja) 2010-07-02 2021-08-24 半導体装置
JP2023030898A Active JP7627714B2 (ja) 2010-07-02 2023-03-01 半導体装置
JP2025011313A Pending JP2025061832A (ja) 2010-07-02 2025-01-27 半導体装置

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2014202941A Expired - Fee Related JP5841647B2 (ja) 2010-07-02 2014-10-01 半導体装置
JP2015222688A Expired - Fee Related JP6027213B2 (ja) 2010-07-02 2015-11-13 半導体装置
JP2016201915A Expired - Fee Related JP6268255B2 (ja) 2010-07-02 2016-10-13 半導体装置
JP2017247794A Withdrawn JP2018078317A (ja) 2010-07-02 2017-12-25 半導体装置
JP2019101570A Active JP6934912B2 (ja) 2010-07-02 2019-05-30 半導体装置
JP2021136245A Active JP7238051B2 (ja) 2010-07-02 2021-08-24 半導体装置
JP2023030898A Active JP7627714B2 (ja) 2010-07-02 2023-03-01 半導体装置
JP2025011313A Pending JP2025061832A (ja) 2010-07-02 2025-01-27 半導体装置

Country Status (4)

Country Link
US (7) US8378403B2 (enExample)
JP (9) JP5687960B2 (enExample)
TW (5) TWI575721B (enExample)
WO (1) WO2012002186A1 (enExample)

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KR101924231B1 (ko) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
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