TW569471B - Process for forming bulk mono-crystalline gallium-containing nitride on heterogeneous substrate - Google Patents

Process for forming bulk mono-crystalline gallium-containing nitride on heterogeneous substrate Download PDF

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Publication number
TW569471B
TW569471B TW091112457A TW91112457A TW569471B TW 569471 B TW569471 B TW 569471B TW 091112457 A TW091112457 A TW 091112457A TW 91112457 A TW91112457 A TW 91112457A TW 569471 B TW569471 B TW 569471B
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Taiwan
Prior art keywords
gallium
heterogeneous substrate
containing nitride
nitride
crystal
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Application number
TW091112457A
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English (en)
Inventor
Robert Dwilinski
Roman Doradzinski
Jerzy Garczynski
Leszek P Sierzputowski
Yasuo Kanbara
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Nichia Corp
Ammono Sp Zoo
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Publication date
Priority claimed from PL347918A external-priority patent/PL207400B1/pl
Priority claimed from PL35037501A external-priority patent/PL350375A1/xx
Application filed by Nichia Corp, Ammono Sp Zoo filed Critical Nichia Corp
Application granted granted Critical
Publication of TW569471B publication Critical patent/TW569471B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)

Description

569471 as B8 C8 D8 六、申請專利範圍 軸之晶格常數為2·8〜3.6之晶種面上，選擇地成長含鎵 氮化物之結晶。 13. 如申請專利範圍第11項之方法，其中晶種為至少表面1 層是選自體心立方結晶系之鉬、鎢、六方最密充填結晶 系之α — Hf、α — Zr、正方晶系鑽石、WC構造結晶系 WC、W2C、ZnO構造結晶系 SiC、TaN、NbN、A1N、六 方晶（P6/mmm)系 AgB2、AuB2、HfB2、六方晶（P63/mmc) 系7 — MoC、ε — MbN等層面。 14. 如申請專利範圍第12項之方法，其中晶種為至少表面1 層是選自體心立方結晶系之鉬、鎢、六方最密充填結晶 系之α — Hf、α — Zr、正方晶系鑽石、WC構造結晶系 WC、W2C、ZnO構造結晶系 SiC、TaN、NbN、A1N、六 方晶（P6/mmm)系 AgB2、AuB2、HfB2、六方晶（P63/mmc) 系γ — MoC、ε — MbN等層面。 15. 如申請專利範圍第11項之方法，其中上述含鎵氮化物是 氮化鎵。 16. 如申請專利範圍第12項之方法，其中上述含鎵氮化物是 氮化鎵。 17· —種結晶含鎵氮化物之塊狀單結晶之方法，其特徵係在 高壓鍋中將含有鎵之供料溶解於含氨與鹼金屬離子之 超臨界溶劑中，將含鎵氮化物之溶解度有負溫度係數之 超臨界溶液置於至少在高壓鍋内之構成元素中不含氧 氣且a〇轴之晶格常數為2.8〜3.6之有晶種面的晶種所配 置之領域中，並上昇到特定溫度或下降到特定壓力，超 78911-940426.doc - 3 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 569471 έΐ C8 D8 六、申請專利範園 臨界溶液的溶解度在針對上述晶種之過飽和領域内，調 節到不會產生自發性結晶濃度以下後，只在高壓鍋内所 配置之上述晶種面上，選擇性成長含鎵氮化物之結晶。 18.如申請專利範圍第17項之方法，其中在高壓鍋中同時形 成溶解領域與結晶化領域之2個領域後，藉由調整溶解 溫度與結晶溫度進行控制對晶種之超臨界溶液之過飽 和〇 19·如申請專利範圍第17項之方法，其中結晶領域之溫度是 設定在400〜600°C。 20·如申請專利範圍第17項之方法，其中在高壓鍋中同時形 成溶解領域與結晶化領域之2個領域後，領域間之溫度 差在150°C以下，最好保持在100°C以下。 21.如申請專利範圍第17項之方法，其中在高壓鍋中形成有 特定溫度差之溶解領域與結晶化領域2個領域，針對構 成元素中不含氧氣且a〇軸之晶格常數為2.8〜3.6有晶種 面之晶種之超臨界溶液過飽和調整，是利用投與作為有 提高晶種總面積之總面積GaN結晶之含鎵供料來進行。 78911-940426.doc - 4 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
TW091112457A 2001-06-06 2002-06-06 Process for forming bulk mono-crystalline gallium-containing nitride on heterogeneous substrate TW569471B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL347918A PL207400B1 (pl) 2001-06-06 2001-06-06 Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
PL35037501A PL350375A1 (en) 2001-10-26 2001-10-26 Epitaxial layer substrate

Publications (1)

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TW569471B true TW569471B (en) 2004-01-01

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TW091110622A TWI277666B (en) 2001-06-06 2002-05-17 Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
TW091112459A TW588016B (en) 2001-06-06 2002-06-06 Process for obtaining bulk mono-crystalline gallium nitride
TW091112458A TW546272B (en) 2001-06-06 2002-06-06 Process for obtaining bulk mono-crystalline aluminum nitride
TW091112457A TW569471B (en) 2001-06-06 2002-06-06 Process for forming bulk mono-crystalline gallium-containing nitride on heterogeneous substrate

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Application Number Title Priority Date Filing Date
TW091110622A TWI277666B (en) 2001-06-06 2002-05-17 Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
TW091112459A TW588016B (en) 2001-06-06 2002-06-06 Process for obtaining bulk mono-crystalline gallium nitride
TW091112458A TW546272B (en) 2001-06-06 2002-06-06 Process for obtaining bulk mono-crystalline aluminum nitride

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US (5) US6656615B2 (zh)
EP (2) EP1770189B1 (zh)
JP (6) JP2003040699A (zh)
KR (2) KR100850293B1 (zh)
CN (2) CN100453710C (zh)
AU (1) AU2002328130B2 (zh)
CA (1) CA2449714C (zh)
CZ (1) CZ306997B6 (zh)
HU (1) HUP0401866A3 (zh)
IL (2) IL159165A0 (zh)
MY (1) MY141883A (zh)
NO (1) NO20035437D0 (zh)
PL (1) PL219109B1 (zh)
RU (1) RU2296189C2 (zh)
TW (4) TWI277666B (zh)
WO (2) WO2002101120A2 (zh)

Cited By (1)

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TWI402217B (zh) * 2005-07-08 2013-07-21 Univ California 使用高壓釜於超臨界氨中成長第三族氮化物晶體之方法

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US8709371B2 (en) 2005-07-08 2014-04-29 The Regents Of The University Of California Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
US9551088B2 (en) 2005-07-08 2017-01-24 The Regents Of The University Of California Method for growing group III-nitride crystals in supercritical ammonia using an autoclave

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