TW444278B - Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor - Google Patents
Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor Download PDFInfo
- Publication number
- TW444278B TW444278B TW089105232A TW89105232A TW444278B TW 444278 B TW444278 B TW 444278B TW 089105232 A TW089105232 A TW 089105232A TW 89105232 A TW89105232 A TW 89105232A TW 444278 B TW444278 B TW 444278B
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- Taiwan
- Prior art keywords
- layer
- metal layer
- metal
- source gas
- nitrogen
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 301
- 239000002184 metal Substances 0.000 title claims abstract description 300
- 230000004888 barrier function Effects 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 41
- 239000003990 capacitor Substances 0.000 title claims description 26
- 239000007789 gas Substances 0.000 claims abstract description 133
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 113
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 57
- 239000010936 titanium Substances 0.000 claims abstract description 55
- 238000002347 injection Methods 0.000 claims abstract description 51
- 239000007924 injection Substances 0.000 claims abstract description 51
- 239000000203 mixture Substances 0.000 claims abstract description 46
- 239000010955 niobium Substances 0.000 claims abstract description 23
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 16
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010937 tungsten Substances 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 11
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 6
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 65
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 60
- 229910052760 oxygen Inorganic materials 0.000 claims description 60
- 239000001301 oxygen Substances 0.000 claims description 60
- 238000009792 diffusion process Methods 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 36
- 238000011010 flushing procedure Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 19
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 claims description 8
- -1 dimethyl (dimethylamino) titanium Chemical compound 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910010037 TiAlN Inorganic materials 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- PWVDYRRUAODGNC-UHFFFAOYSA-N CCN([Ti])CC Chemical compound CCN([Ti])CC PWVDYRRUAODGNC-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- UJJZZIJKCHSBNI-UHFFFAOYSA-N azanide;titanium(2+) Chemical compound [NH2-].[NH2-].[Ti+2] UJJZZIJKCHSBNI-UHFFFAOYSA-N 0.000 claims 1
- 238000012217 deletion Methods 0.000 claims 1
- 230000037430 deletion Effects 0.000 claims 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 16
- 238000007254 oxidation reaction Methods 0.000 abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910003074 TiCl4 Inorganic materials 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- LZVXLVGFXYYXLC-UHFFFAOYSA-N CN(C)[Ti].[Ti] Chemical compound CN(C)[Ti].[Ti] LZVXLVGFXYYXLC-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- GVMXZYCDXRLDDT-UHFFFAOYSA-N C(C)N(CC)[Ti].[Ti] Chemical compound C(C)N(CC)[Ti].[Ti] GVMXZYCDXRLDDT-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- 241000271566 Aves Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- AIRRSBIRSIPRGM-UHFFFAOYSA-N [N].[Hf] Chemical compound [N].[Hf] AIRRSBIRSIPRGM-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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4 442 7 8 五、發明說明(l) 發明背景 1. 發明範疇 本發明係關於利用原子層沉積形成金屬層之方法及具有 該金屬層作為障壁金屬層或電容器之上或下電極之半導體 裝置β 2. 相關技藝說明 隨著半導體襞置之積體密度的增加,已發展出具大介電 常數之高介電材料,以在小面積中得到大電容β舉例來說 ,具有鈣鈦礦晶體結構之BST 膜在整體狀態 具有約數百至一千之介電常數,其不同於習慣上用於電容 器之氮化矽薄膜、矽氧氮化物薄膜及氧化鈕(〇5 )薄膜。 BST薄膜之優點在於可供給薄的介電薄膜,以致即使當 薄蹲之厚度多於500埃時,相當氧化物厚度低於1〇埃。可 使用不會氧化的電極諸如鉑(pt)作為BST電極。亦可使用 諸如釕(Ru)或銥(Ir)之電極作為BST電極,其即使當氧化 並形成氧化釕(Ru〇2)或氧化銥(11*〇2)時,仍擁有導體的特 為得到具有優異電容及漏電流特性之高介電薄膜, 必需於沉積BST薄膜後在高溫下進行熱處理。此時必需;形 成障壁金屬層,以防止由於氧之擴散所造成之歐姆層 晶石夕插塞的m壁金屬層係插於多晶⑪插塞及下電極 之間。 習慣上通常使用氮化鈦(TiN)薄膜作為 ㈣膜會在高於4心之溫度下氧化。當於沉積
4 442 7 8 五、發明說明(2) 後在氧氣環境中進行高溫熱處理時,由於鉑(p t )讓氧可容 易地通過’因而T i N薄膜及多晶矽插塞會氧化。尤其,當 T i N薄膜經氧化時,將生成非導電性的τ丨〇2薄膜。此外, 翻(Pt)及碎($丨)會擴_以1^薄膜内,因此TiN薄膜並無法 作為障壁金屬層。已及Si之擴散係由TiN之圓柱狀結 構所造成。因此,必由供給不具有作為擴散路徑之晶 粒邊界的非晶形結而限制氧之擴散。 日日 由此需求,而對含有耐火金屬之化合物進行研究^由含 有耐火金屬之化合物所形成之障壁金屬層有由於組合物1 複雜性’因而當化合物係利用化學蒸氣沉積法而沉積時, 組合物之適應丨p寻再現性將降低的。因此,當形成含 有耐火金屬之i:备物的障壁金屬層^货,通常在氮氣環境二 進行反應性濺聲声。然而,由滅所形成的障壁金屬層 具有不良的階藤食蓋率(step c参弓,rage;),因此其並不適 合作為電容器中之障壁金屬層广其之結構當半導體裝置之 f體密度增加時變得更為複雜,例如,形成於渠溝型電容 器中之具有高長徑比(aspect rati〇)之渠溝下部的障 屬層。 發明總結 為解決以上問題’本發明之第一目的在於提供一種利用 ,,層沉積形成金屬層之方法’其具有優異的階梯覆蓋率 並可=止氧之擴散’藉此方法可適當地調整金屬層之組成 ’以容易地提供期望的電阻及導電性。 本毛明之第二目的在於提供一種具有利用以上方法形成
第8頁 444278 五、發明說明(3) 之金屬層作為障壁金屬層或電容器之上或下電極之半導體 裝置。 因此’為達成第一目的,本發明之第一態樣提供一種形 成具有A-B-N結構之金屬層之方法,其中經由個別注射反 應性金屬(A)、防止反應性金屬(A)與氮(N)結晶之鋁(B)、 及氮(N)之脈衝源氣體,並使源氣體化學吸附至半導體基 材’而堆疊多個原子層。 尤其’將源氣體以預定次序交替注入,以交替配置原子 層’並調整各源氣體之注射脈衝的數目,以決定金屬層之 組成。 反應性金屬(A)可為鈦(Ti)、鈕(Ta)、鎢(W)、锆(Zr)、 鈴(H〇、链(M〇)或鈮(Nb)。金屬層之導電性及電阻可經由 調聱非晶形結合元素之源氣體之注射脈衝的數目而決定。 當金屬層為TiAIN層時’在TiAIN層中之A1相對於Ti的含量 可為 10-35%。 為達成第二目的,本發明亦提供—種半導體裝置,其包 括包含在半導體基材中之觸孔之絕緣薄膜、形成於觸孔底 ,之導電性材料薄膜、及包括形成於觸孔中之導電性材料 薄膜上之下電極、形成於下電極上之高介電薄膜、及形成 於高介電薄膜上之上電極之電容器。 尤其’此半導體裝置具有在觸孔中之導電性材料薄膜與 下電極之間的障壁金屬層。障壁金屬層具有— N結構, 其中經由交替沉積反應性金屬(A)、防止反應性金屬(A)與 氮α)結晶之鋁(B)、及氮(N),而堆疊多個原子層。障壁
五、發明說明(4) 金屬層之組成比可由久; 』田谷原子層之沉積次數而決定。 反應性金屬(A)可為鈦(Ti)、钽(Ta)、鎢(以、錯(Zr)、 铃(Hf)、飽(Mo)或銳(Nb)。障壁金屬層之導電性及電阻可 由紹(B)之原子層之注射脈衝數目對障壁金屬層所使用之 注射脈衝的總數而決定。 此外’為達成第二目的’本發明提供一種半導體裝置, 其具有包括形成於半導體基材上之預定材料薄膜上之下電 極、形成於下電極上之高介電薄膜、及形成於高介電薄膜 上之上電極之電容器。 尤其 > 可將下電極形成為A-B-N結構,其中經由交替及 連續沉積反應性金屬(A )、防止反應性金屬(a )與氮(N )結 晶之非晶形結合元素(B )、及氮(Μ)之原子層,而堆疊多個 原干層。下電極之組成可由各原子層之沉積次數決定。 上電極可以與下電極相同的方式形成。反應性金屬(Α) 可為鈦(T i )、(T a)、嫣(W)、錯(Z r)、給(H f)、钥(Μ 〇) 或銳(Nb)。防止反應性金屬(A)與氮(Ν)結晶之非晶形結合 元素(B)可為鋁(A1)、矽(Si)或硼(B)。此外,下電極之導 電性及電阻可由非晶形結合元素(B)之原子層之注射脈衝 數目對下電極所使用之注射脈衝的總數而決定。 為達成第一目的,本發明之第二態樣提供一種形成金屬 層之方法。此方法包括經由以預定次序個別注射構成具有 A結構之氮化合物之反應性金屬(A)、防止反應性金屬 (A)與氮(N)結晶之非晶形結合元素(B)、及氮(N )之脈衝源 氣體’並使源氣體化學吸附至半導體基材’同時並調整各
第10頁 444278 五 '發明說明(5) 源氣體之注射脈衝之數目以調整金屬層之組成,而形成具 有A-B-N結構之金屬層之步驟。此外,可在金屬層上形成 氧擴散防止層,因而形成包括多個金屬層及多個氧擴散防 止層之多重金屬層。 氧擴散防止層可經由將金屬元素及氧之源氣體之脈衝注 射交替施加至包括金屬層之半導體基材而形成。或者,氧 擴散防止層可經由進行利用原子層沉積在金屬層上形成含 氧材料層,並將包括金屬層及材料層之半導體基材熱處理 之步驟而形成。反應性金屬(Α)可為鈦(Ti)、鈕(Ta)、鶴 (W)、鍅(Zr)、銓(Hf)、鉬(Mo)或鈮(Nb)。防止反應性金 屬(A )與I ( N )結晶之非晶形結合元素(b )可為銘(a 1)、石夕 (S 1 )或硼(B )。金屬層之導電性及電阻係經由調整非晶形 結令元素之源氣體之注射脈衝的數目而決定。氧擴散防止 層可為氧化鋁層。 為達成第二目的,本發明提供一種半導體裝置,其包括 包含在半導體基材中之觸孔之絕緣薄膜、形成於觸孔底部 之導電ϋ材料薄膜、包括形成於觸孔中之導電形材料薄膜 電極、形成於下電極上之高介電薄膜、及形成於高 "電薄膜上之上電極之電容器。 々此半導體裝置亦包括包含多個金屬層及多個氧擴 性封料障壁金屬層。各金屬層係形成於觸孔中之導電 其中2 f山與下電極之間。金屬層係以α—β_ν結構形成, 氮扯曰父替沉積反應性金屬(Α)、防止反應性金屬(八)與 曰曰之非晶形結合元素(Β)、及氮⑻,而堆叠多個
444278 五、發明說明(6) 原子層,其中金屬層之組成比係由各原子層之沉積次數決 定。各氧擴散防止層係形成於金屬層上。 半導體裝置亦可包括在氧擴散防止層上之含氧材料層。 反應性金屬(A)可為敛(Ti)、组(Ta)、鎢(W)、鍅(Zr)、給 (Hf)、鉬(Mo)或鈮(Nb)。防止反應性金屬(a)與氮(n)結晶 之非晶形結合元素(B)可為銘(A1)、發(Si)或蝴(B)。障壁 金屬層之導電性及電阻係由非晶形結合元素之原子層之沉 積次數對障壁金屬層所使用之沉積總數之比所決定。氧擴 散防止層可為氧化鋁層。 如前所述’利用本發明之原子層沉積所形成之金屬層 (多重金屬層)具有南財熱及1¾抗氧化特性。由於金屬層係 經由個別沉積原子層而形成,因而其階梯覆蓋率即使係在 密摩非常大的區域中亦相當優異。此外,由於個別的原子 層係以預定次序吸附及形成’因而可容易地調整包含於金 屬層(多重金屬層)中之各元素的組成比β可將利用本發明 之原子層沉積所形成之金屬層使用作為半導體裝置中之障 壁金屬層、下電極或上電極。 圖示簡單說明 本發明之以上的目的及優點經由參照附圖詳細說明其之 較佳具體實例當可更加明白,其中: 圖1 Α及1Β係顯示當根據本發明之第一態樣形成金屬層時 ,注入源乳體及沖洗用氣,以ί儿積原子層之方法之一例子 的圖; 圖2Α及2Β係顯示當根據本發明之第—態樣形成金屬層時
4442 7 8 五、發明說明(7) :ί :源氣體及沖洗用氣’以沉積原子層之方 子的圖; 法之另一例 圖3係顯示當a 1 $ 4 μ μ ^ * 之tb雪Μ夕绺yu之成比增加時,鈦鋁氮化物(TiA1N)層 I t匕电I且之變化的圖; 圖4係顯示根據本發明所形成之TiA1Njg^魏之圖 圖5係顯示習 T1 N)薄膜及根據本發明
TiAIN層之表面丨^^·, 圖6係顯示在氧^環境中熱處理,以測試本發明之口⑽ 層之耐熱及抗氧化特性之TlAlN層之表面電阻 的圖; 圖7A至7D係說明根據本發明之一具體實例使用金屬層作 為障壁金屬層製造半導體裝置之方法之剖面圖; 圖8A至8E係說明根據本發明之具體實^使用金屬層作 電容器之上電極製造半導體裝置之方法之剖面圖; … 圖9A至9E係說明根據本發明之一具體實例使用金屬層 為電容器之下電極製造半導體裝置之方法之剔面圖; 圖1 0係說明根攄本發明之第二態樣利用原^層沉積形 金屬層之方法之剖面圖; 圖11係顯示當形成圖10之氧擴散防止層時,注入源氣 及沖洗用氣’以沉積原子層之方法之一例子的圖; 、 圖12及13係說明根據本發明之第三態樣利用原子層沉 形成金屬層之方法之剖面圖;及 積 圖1 4及1 5係說明使用根據本發明之第二及第三態 之 利用
11·! 第13頁 4442 7 8 五、發明說明(8) 原子層沉積所形成之金屬層作為障壁金屬層之製造 裝置之方法的剖面圖 發明詳沭 以下將參照附圖而說明本發明之較佳具體實例。 形成金屬 原子層沉積係經由將反應物連績注射至室中及自室内移 除’而在半導體基材上連續沉積多個原子層之方法。原子 層沉積係使用類似化學蒸氣沉積(CVD)之化學反應,但其 與CVD不同之處在於反應物氣體係以脈衝的形式個別^入 ,而非同時注入反應物氣體,以致其不會在室内混合。舉 例來說,在使用氣體A及B之情況中,先將氣體A注入至室 内,及氣體A之分子化學吸附至基材之表面,因而形成A之 原予層。使用惰性氣體諸如氬氣或氮氣沖洗殘留於室内之 氣體A。其後將氣體B注入並使其化學吸附,因而在a之原 子層上形成B之原子層。僅在A之原子層的表面上發生在^ 之原子層與B之原子層之間的反應。因此,不管表面之形 態如何,皆可得到優良的階梯覆蓋率。於在A 之原子層 之間的反應後,將殘留於室内之氣體B及反應之副產物沖 洗掉。可經由重複氣體A或3之注射及原子層之沉積,而以 原子層單位調整薄膜之厚度。 以下之說明係關於根據本發明之第一態樣利用原子層沉 積形成金屬層之方法。將金屬層形成為有多個原子層以A_ B-N結構堆疊之結構,其中A係反應性金屬,B係供非晶形 結合用之元素,及N係氮。反應性金屬(A)係過渡金屬諸如
4442 7 8 五、發明說明(9) 鈦(Ti)、鈕(Ta)、鎢(W)、錯(Zr)、妗(HO、鉬(Mo)或銳 (Nb)。非晶形結合元素(B)係鋁(A 1 )、矽(S i)或硼(B) °非 晶形結合元素(B)亦可與反應性金屬(A)所使用之元素相同 非晶形結合元素(B)防止反應性金屬(A)與氮(N)之結合 ’因而形成具有非晶形結構之金屬層。非晶形結合元素 (B)亦可防止具有a-B-N結構之金屬層在後續的熱處理中結 本發明之一代表性金屬層為鈦鋁氮化物(T i A1 N)薄膜。 當形成TiAIN層時,將四氱化鈦(TiCl4)、肆(二甲胺基)鈦 (TDMAT)、及肆(二乙胺基)鈦(TDEAT)之其中一者使用作為
Ti之源氣體。將三甲基鋁(tma)、三乙基鋁(TEA)、三異丁 基銲(TIBA)及AlClx之其中一者使用作為A1之源氣體。將 队及NH3之其中一者使用作為n之源氣體。 在形成T i A 1 N層時,先將半導體基材裝入原子層沉積室 中。接著將構成金屬層之三元素的源氣體,即反應性金屬 (A)、鋁(A1)及氮(N),自氣體供給單元經由氣體供給管供 給至原子層沉積室中。源氣體係以脈衝的形式個別交替供 給’因而在半導體基材上堆疊Ti、A1&N原子層。金屬層 中之Ti、A1及N的組成比可經由適當地決定源氣體之注身^ 次序、各氣體之注射數目、及源氣體之注射時間而調整。 尤其,金屬層之組成可根據非晶形結合元素(例如,A1)之 原子層之沉積次數而調整,以致可提供金屬層之期望 電性及電阻。卩下之說明係關於Ti、A1 之組成之調整
第15頁 4442 7 8 五、發明說明(ίο) 的例子。 圖1 A及1 B係顯示當根據本發明之第一態樣形成金屬層時 ’注入源氣體及沖洗用氣’以沉積原子層之方法之一例子 的圖。參照圖 1A 及1B,將TiCl4、TMA 及NH3 aTiCl4-TMA-TiCl4-NH3i循環重複注入,因而形成含有較大量Ti之 TiAIN層。基材之溫度為30 0-700 °C,室之内部壓力為 0 ·卜1 0托耳(torr ),及注入源氣體之脈衝開啟時間為 0.1-10秒較佳。 圖1 A顯示經由邊注入源氣體邊連續注入沖洗用氣而進行 沖洗操作之情況。圖1 B顯示經由在源氣體之注射脈衝之間 以脈衝形式注入沖洗用氣而進行沖洗操作之情況。使用Ar 、N2及He氣體之其中一者作為沖洗用氣。 阑2 A及2 B係顯示當根據本發明之第一態樣形成金屬層時 ,注入源氣體及沖洗用氣’以沉積原子層之方法之另—例 子的圖。參照圖2A 及2B ’ 將TiCl4、TMA 及NH3 UTiCl4-NH3- ΤΜΑ-ΝΗυ之循環重複注入,及TMA之脈衝開啟時間較Tici 長’因而形成包含較大量A1之TiAl N層。室的條件係與圖 1A及1B相同。換言之,基材之溫度為3〇〇_7〇(rc ,室之内 部壓力為0. 1 - 1 0托耳,及注入源氣體之脈衝開啟時間為 0. 1-10 秒。 圖2A顯示經由邊注入源氣體邊連續注入沖洗用氣而進行 冲洗操作之情況。圖2 B顯示經由在源氣體之注射脈衝之間 注入沖洗用氣而進行沖洗操作之情況。使用Ar、化及He氣 體之其中一者作為沖洗用氣。
第16頁 4442 7 8 五、發明說明(11) ------ 可經由使用以上方法適當地調整各源氣體之注射數目, 而適S地調整各原子層之沉積比。各原子層之導電性及 阻係視各原子層之沉積比而異,如表1所示。 表1 樣品1 樣品2 樣品3 Ti 35% 24% 21% A1 15% 26% 31¾ __ N 30% 35% 35% C 17% 10% 8% Cl 3¾ 3% ^ 3¾ _ Ti:Al 1:0. 43 1:1.1 1:1.48 比電阻p (// Ω-cm) 589 3701 9161 參照表1 ’可以看到τ i A1N層之比電阻隨T i A1N層之組合 物中之A1含量相對於Ti含量之增加而增加。由於比電阻p 係與導電性之倒數成比例’因而導電性隨比電阻之增加而 減小。因此’可將TiAIN層適當地形成為具有適合於其用 途之導電性及電阻。 圖3係顯示TiAIN層之比電阻成TiAIN層之組合物中之Ain 對T i N +A 1 N比之增加之變化之圖。參照圖3,可以看到 TiAIN層之比電阻隨TiAIN層之組合物中之A1含量的增加而 增加。當將TiAIN層使用作為電容器之上電極或在多晶石夕 層與下電極之間之障壁金屬層時,比電阻可根據裝置之形 態而異,但以30 0- 1 0 0 0 0微歐姆-公分較佳。因此,在 TiAIN層中,A1之含量相對於Ti之含量為10-35%較佳。 圖4係顯示根據本發明所形成之TiAIN層之XRD結果之圖
苐17頁 4 44 2 7 8 五、發明說明(12) 。圖5係顯示習知之氮化鈦(TiN)層及根據本發明之TiAiN 層之表面的SEM照片。更明確言之,圖4之上圖係含有較大 ITiiTiAIN層之XRD結果,及下囷係含有較大量八丨之 T i A1 N層之XRD結果。如圖4所示’可以看到儘管觀察到輕 微的fcTiA1N_波峰,但根據本發明之第一態樣所形成之ΉΛ1Ν 層整體而§為非晶形狀態。如圖5所示’本發明之ή a 1 N層 較習知之TiN層具有更多的平面表面。 圖6係顯示在氧氣環境中熱處理,以測試本發明之τ i a 1 N 層之耐熱及抗氧化特性之TiAIN層之表面電阻(Rs)之變化 的圖。「在圖6中,參考字母rA」係指示未進行處理的情 況。「Β」係指示在〇. 1托耳及600 °C下在02環境中進行熱 處理30分鐘之情況。「C」係指示在〇. 1托耳及700 °C下在 〇2環_境。中進行熱處理3〇分鐘之情況。參照圖6,在〇.丄托耳 及600 C下在氧氣環境中進行熱處理30分鐘之250埃之 Tlf1N層的Rs (「B」)相較於未進行處理之TiAiN之Rs (「A」)幾乎未改變.因此,可以看到TiA1N具有優異的耐 熱及抗氧化特性。本發明之τ丨A丨N由於在τ丨A} n層中之A丨在 熱處理過程中轉移至TiAlN層之表面,因而在^人丨付層之表 面上生成氧化物薄膜,即A込%薄膜,因此防止氧之擴散, 故而顯現優異的耐熱及抗氧化特性β 如前所述’由於原子層係個別沉積,因而τ丨Α丨Ν層顯現 高耐熱及抗氧化特性,且即使係在非常高密度的區域中亦 具有優異的階梯覆蓋率。由於個別的原子層係連續吸附及 生成’因而可更容易地調整TiA1N層之組合物,且相較於
第18頁 4442 7 8 五、發明說明(13) -— CVD ’組合物具有優異的再現性。 在第-具體實例中將詳細說明具有如前所述利用原子層 沉積所形成之金屬層作為障壁金屬層之渠溝型電容器及 此電容器之製造方法。在第二具體實例中將詳細說明具有 金屬層作為上電極之圓柱型電容器,&此電容器之製造方 法。在第三具體實例令將詳細說明具有金屬層作為下電極 之渠溝型電容器’及此電容器之製造方法。 第一具體實例 +參照圖7A,在半導體基材104上形成包含氧化矽(Si〇〇 薄膜之絕緣層210。接著將絕緣層21〇光蝕刻而形成觸孔。 參照圖7 B,可將觸孔部分填充至預定深度,或完全不填 充,以產生期望電谷。當將觸孔部分填充時,將觸孔填充 多晷矽,然後在多晶矽上進行濕式蝕刻,或濕式蝕刻結合 化學機械拋光,以在觸孔之底部留下預定厚度之多晶矽薄 膜 212 ^ 參照圖7 C ’在絕緣層21 0及多晶矽薄膜2 1 2上形成耐熱及 抗氧化特性經改良之障壁金屬層214。障壁金屬層214係一 導電層,其中利用原子層沉積連續堆疊反應性金屬(A)、 防止反應性金屬及氮(N )結晶之非晶形結合元素(B )、及氮 (N)之原子層。關於反應性金屬(A),使用Ti、Ta、W、Zr 、Hf、Mo或Nb,及關於非晶形結合元素(B),使用Ai、Si 或B。非晶形結合元素防止反應性金屬與氮之結合,因而 形成具有非晶形結構之障壁金屬層。 舉例來說,分別對障壁金屬層供應反應性金屬(T i )、非
第19頁 4442 7 8 五、發明說明(14) 晶形結合元素(A1)及氮(N)之源氣體TiCl4、TMA及NH3之脈 衝注射,及使源氣體化學吸附至多晶矽薄膜2 1 2,因而形 成包括多個原子層之TiAIN層。由於源氣體係以預定次序 交替及個別供應’因而TiAIN層具有其中對應於源氣體之 原子層係交替堆疊之結構。如前所述,T i A 1 N層顯現優異 的耐熱及抗氧化特性。構成障壁金屬層214之Ti、A1及N之 含量對障壁金屬層2 1 4之總含量之比係由相關源氣體之注 射脈衝的總數所決定《經由適當地決定組成比,可準綠地 得到期望的導電性及電阻。 關於組成之調整’可採用以上參照圖丨A至2 b所說明之例 子’及在沉積原子層時可採用如說明於例子中之相同條件 。沖洗操作可經由邊注入源氣體,邊連續注入沖洗用氣而 不t斷地進行,如圖丨a及2人所示。或者,沖洗操作可經由 在源氣體之注射脈衝之間注入沖洗用氣而進行,如圖丨β及 2B所示。沖洗用氣為Ar、乂、或He。 於在多晶石夕薄膜212及絕緣層21〇上形成TiAIN層之後, 將沉積於觸扎外部之部分的了 i A1 N層回姓,並利用濕式触 刻或化學機械拋先移除,因而僅留下形成於觸孔中之部分 的障壁金屬層2 1 4。可將根據本發明利用原子層沉積所形 成之障壁金屬層21 4做得較習知者厚。此外,可容易地調 正障壁金屬層214之厚度,且可容易及準確地調整障壁金 ,層214之組成。障壁金屬層2丨4之比電阻為3〇〇_1〇〇〇〇微 歐姆公为較佳。因此,調整A 1之組成tl:,以使T i A 1 N層中 之A1含量相對於Ti約為1〇_35%。
第20頁 444278 五、發明說明(15) 參照圖7D,在所產生之結構上形成包含諸如Cu、A1或W 之金屬的渠溝型下電極216。當下電極216為易擴散的金屬 ’諸如Cu時’障壁金屬層214之防止擴散的能力特別優異 。其次,在渠溝型下電極層216上沉積具有大介電常數之 氧化鈕薄膜(Ta205)或強誘電性物質’諸如PZT ((Pb,Zr) Ti03)、BST ((Ba,Sr)Ti03)或STO (SrTi03),而形成介電 薄膜218。接著在介電薄膜218上形成上電極2 20。 第二具體f例 參照圖8A至8E,將說明使用利用原子層沉積形成之金屬 層作為上電極之圓柱型電容器。參照圖8A,在半導體基材 1 0 4上形成包含氧化矽(S i 02 )薄膜之絕緣層2 1 〇 ^接著進行 光蝕刻以在絕緣層21 0中形成觸孔。 參照圖8 B,將觸孔填充導電性材料而形成插塞2 1 2 ^例 如,可將觸孔填充摻雜多晶矽而形成多插塞。 參照圖8 C ’使用光阻劑圖案(未示於圖中)在絕緣層2 1 〇 及插塞212上形成包含諸如A1或W之金屬的圓柱型下電極 214。接下來在圓柱型下電極214及多插塞2〗2之間形成TiN 或TaN之障壁金屬層216 ’以防止多插塞212在稍後之熱處 理中的氧化。當下電極214係易擴散的金屬,諸如Cu時, 障壁金屬層21 6以包含第三族之金屬層較佳,例如,τ丨s 土 N 層、TaSiN層或TiAIN層,其之防止擴散的能力特別優異e 參照圖8D ’沉積具有大介電常數之氧化钽薄膜(Ta2〇5)或 強誘電性物質,諸如PZT ((Pb,Zr)Ti03)、BST ((Ba, Sr)Ti03)或STO (SrTi03),而形成包圍圓柱型下電極層214
第21頁 4442 7 8 五、發明說明(16) 之介電薄膜218。 參照圖8 E,在介電薄膜2 I 8上形成根據本發明之具有a _ B_N結構的上電極220。上電極220係·—導電層,呈中利用 原子層沉積連續堆疊反應性金屬(A )、防止反應性金屬及 tL(N)結晶之非晶形結合元素(B)、及氛(n)之原子層。上 電極220之原子層之組成比係根據原子層之注射脈衝之數 目對上電極2 2 0所使用之注射脈衝之總數而決定,及上電 極220之導電性和電阻可經由調整由非晶形結合元素(B)所 形成之原子層之數目對其他原子層之結合數目之比而適當 地決定。反應性金屬(A)可為Ti、Ta、W、Zr、Hf、Mo或Nb 。防止反應性金屬(A)與氮(N )結晶之非晶形結合元素(B) 可為Al、Si或B。 夺此具體實例中,上電極220係由TiAIN層所形成。當形 成TiAIN層時,使用四氣化鈦(Tic、)、肆(二甲胺基)鈦 (TDMAT)及肆(二乙胺基)鈦(TDEAT)之其中一者作為了丨之源 氣體。使用三甲基鋁(TMA)、三乙基鋁(TEA) '三異丁基鋁 (TIBA)及AlClx之其中一者作為A1之源氣體。使用& &nh3 之其中一者作為N之源氣體。 更明確言之’在形成上電極22〇時,以預定次序將第三 族之氮材料之源氣體的脈衝注射連續供應至原子層沉積室 中’因而在半導體基材1〇4上之高介電薄膜218上連續堆疊 原子層。 為將Ti A 1 N層形成作為上電極22〇,分別供應反應性金屬 (Ti)、非晶形結合元素(A1)及氮(1〇之源氣體TiCl4、TMa
第22頁 4442 7 8 五、發明說明(17) ^ 及NH3之脈衝注射,及使源氣體化學吸附至高介電薄媒21 8 ,因而形成多個原子層。由於源氣體係個別供應,因而上 電極2 2 0具有其中對應於各源氣體之原子層係交替堆叠之 結構。構成上電極220之Ti、A1及N之含量對上電極22〇之 總含量之比係經由適當地調整相關源氣體之注射總數所決 定。經由適當地決定组成比,可準確地得到期望的導電^生 及電阻。 關於組成之調整’可採用以上參照圖1A至2 B所說明之例 子’及在沉積原子層時可採用如說明於例子中之相同條件 。沖洗操作可經由邊注入源氣體,邊連績注入沖洗用氣而 不中斷地進行’如圖1A及2A所示。或者,沖洗操作可經由 在源氣體之注射脈衝之間注入沖洗用氣而進行,如圖1B 2B所示°沖洗用氣為Ar、N2、或He。 即使 複雜結 覆蓋率 可靠性 由於 原子層 組成, 極之組 各源氣 電性及 現性非 當如於 構的上 亦非常 之電容 當在如 係連續 且相較 成可經 體之脈 電阻可 常優異 形成此 電極時 良好, 器。 前所述 吸附及 於CVD 由僅調 衝注射 視需要 —- 叫 | '〜頂於韦 ,根據本發明所形成之上電極的階梯 因而可製造具有高介電常數及優異電 :具體實例中形成上電極時,個別的 生成,因而可更容易地調整上電極之 組成的再現性優異。換言之,上電 f源氣體之脈衝注射次序及上電極之 目而容易地調整’因此上電極之導 而非常容易地調整。此外’組成的再
444278 五、發明說明(〗8) ' 差_兰具體實例 參照圖9A至9E,將說明使用利用原子層沉積形成之金屬 層作為下電極之渠溝型電容器。參照圖9八,在半導體基材 1 0 4上形成包含氧化矽(s〗% )薄膜之絕緣層3 1 〇。接著進行 光餘刻以在絕緣層3 1 0中形成觸孔。 參照圖9B,可將觸孔部分填充至預定深度,或完全不填 充’以產生期望電容。當將觸孔部分填充時’將觸孔填充 多晶矽’然後在多晶矽上進行濕式蝕刻,《濕式蝕刻結合 化學機械拋光,以在觸孔之底部留下預定厚度之多晶矽 膜 312。 參照圖9C,在絕緣層3 1 0及多晶矽薄膜3丨2上形成下電極 314。下電極314係以與在第二具體實例令用於形成上電極 220之相同方式形成。換言之,下電極314係一導電層,其 中利用原子層沉積交替堆疊反應性金屬(A)、防止反應性' 金屬及氮(N)結晶之非晶形結合元素(β)、及氮(n)。下電 極3 1 4之原子層之組成比係根據原子層之注射脈衝之數目 對下電極3 1 4所使用之注射脈衝之總數而決定,及下電極 314之導電性和電阻可經由調整由非晶形結合元素(Β)所形 成之原子層之數目對其他原子層之結合數目之比而適當地 決定。對反應性金屬(A)及防止反應性金屬(Α)與氮(Ν)結 晶之非晶形結合元素(Β)使用與在第二具體實例中所使用 之相同材料。 在此具體實例中’下電極31 4係由類似第二具體實例中 之上電極220之TiAIN層形成。當形成Ti Αιν層時,使用四
第24頁 4442 7 8 五、發明說明(19) 氣化鈦(TiCl4)、肆(二甲胺基)鈦(TDMAT)及肆(二乙胺基) 鈦(TDEAT)之其中一者作為Ti之源氣體。使用三甲基鋁 (TMA)、三乙基鋁(TEA)、三異丁基鋁(TIBA)及AlClx之其 中一者作為A1之源氣體。使用N2及^1113之其中一者作為N之 源氣體。 以下之說明係關於形成下電極3 1 4之方法。形成下電極 31 4之方法係與在第二具體實例中形成上電極220之方法類 似。 為形成T i A1N層作為下電極3 1 4,分別供應反應性金屬 (Ti)、非晶形結合元素(A1)及氮(N)之源氣體TiCl4、TMA 及NH3之脈衝注射,及使源氣體化學吸附至多晶矽薄膜31 2 及絕緣層3 1 0,因而形成多個原子層。 申於源氣體係以預定次序交替供應,因而下電極314具 有其中對應於源氣體之原子層係交替堆疊之結構。構成下 電極31 4之T i、A1及N之組成比係經由適當地調整各源氣體 之注射數目而決定。經由適當地決定組成比,可準確地得 到期望的導電性及電阻。 關於組成之調整,可採用以上參照圊丨A至2 B所說明之例 子’及在沉積原子層時可採用如說明於例子中之相同條件 。沖洗操作可經由邊注入源氣體,邊連續注入沖洗用氣而 不中斷地進行,如圖1A及2 A所示。或者,沖洗操作可經由 在源氣體之注射脈衝之間注入沖洗用氣而進行,如圖1 B及 2B所示。沖洗用氣為Ar、N2、或He。 於如前所述將各原子層沉積預定的次數後,使用光罩諸
第25頁 ' 44d2 7 8 五、發明說明(20) 如光阻劑圖案完成期望圖案的下電極314。 參照圖9D ’在渠溝型下電極層314上沉積具有大介電常 數之氧化鈕薄膜(Τ%05)或強誘電性物質,諸如PZT ((Pb,
Zr)Ti03)、BST ((Ba,Sr)Ti03)或STO (SrTi03) ’ 而形成 渠溝型介電薄膜318。 參照圖9E ’在高介電薄膜318上形成上電極320。為防止 在熱處理過程中由下方高介電薄膜318所造成之氧化,形 成上電極32 0 ’以致在高介電薄膜318上由TiN或TaN形成作 為障壁層之金屬層320a,及在金屬層320a上形成多晶碎層 320b。 替代使用金屬層320a及多晶矽層320b,上電極320可由 包括反應性金屬(A)、防止反應性金屬(a )與氮(n )結晶之 非辱形結合元素(B)、及氮(N) ’例如’TiAIN層之金屬層 形成。為得到渠溝型高介電薄膜31 8之優異的階梯覆蓋率 ’上電極320以利用原子層沉積,以與用於形成下電極314 相同之方式形成較佳。 當下電極314係如前所述利用原子層沉積由以“^^層形成 時’由於TiAIN層具有優異的耐熱及抗氧化特性,因而下 電極314可成功地作為障壁金屬層。因此,並不需在 極314及與下電極314接觸之下方之多晶矽薄膜3丨2或丰導 體基材1 0 4之間形成額外的障壁層,因而可簡化製^。 由於在形成下電極314時,原子層係個別沉積,=而 使係在密度非常大的區域中,下電極314之階梯覆蓋亦 相當優異。即使當在形成此具體實例之渠溝型電容器中'沉
第26頁 444278
五、發明說明(21) 形 電 積具有複雜結構及向長徑比之下電極時’根據本 成之下電極的階梯覆蓋率非常良好,因而 常數及優異電可靠性之電容器。 氣高介 由於當如前所述在此具體實例中形成下電極時,個 原子層係連續吸附及生成,因而可更容易地調整 = 組成,且相較於CVD,組成具有優異的再現性。換言之’ 下電極之組成可經由僅調整源氣體之脈衝注射次序°及下 極之各源氣體之注射數目而容易地調整,因此下電極之 電性及電阻可視需要而非常容易地調整。此外’組 現性非常優異。 篮明之第..三態金屬層之方法 、圖10係說明根據本發明之第二態樣,利用原子層沉積形 成禽屬層之方法之剖面圖。圖丨丨係顯示當形成圖10之氧擴 散防止層注人源氣體及沖洗用氣,以沉積原子層之方 法之一例子的圖。 參照圖10 ’根據本發明之第二態樣’利用原子層沉積形 成之金屬層係一多重金屬層405。多重金屬層405係經由交 替沉積多個金屬層401與多個氧擴散防止層4〇3而形成。金 屬層401及氧擴散防止層403係利用原子層沉積設備於原位 形成。氧擴散防止層4 0 3係經由形成為一薄層,例如,至 5-15埃之厚度’以不致干擾電子之流動。 金屬層40 1係以與用於形成第一態樣之金屬層相同之方 式形成。換言之,金屬層401係經形成為其中反應性金屬 (A)、防止反應性金屬與氮(N)結晶之非晶形結合元素(β)
第27胃 78 五、發明說明(22) 、及氮(N),利用原子層沉積’以A-B-N結構交替堆叠之結 構。更明確言之’將反應性金屬(A )、防止反應性金屬(A) 與氮ΛΝ)結晶之#晶形結合元素(B)、及氮(N)之源氣體之 脈衝注射以預定次序交替施加於半導體基材(未示於圖中) 上。源氣體經連續及化學吸附至半導體基材,因而形成A-B-N結構。調整各源氣體之注射數目以得到金屬層4(H之期 望組成。 反應性金屬(A)可為Ti、Ta、W、Zr、Hf、Mo或Nb,及非 晶形結合元素(B)可為A1、Si或B。金屬層4〇i係在與根捸 本發明之第一態樣形成金屬層之方法相同之條件下(例如 ,沉積溫度及源氣體)形成。金屬層401為TiAIN層。 接下來利用原子層沉積在金屬層401上形成氧擴散防止 層4卩3。氧擴散防止層403防止自外部擴散之氧的滲透。氧 擴散防止層4 0 3係經由將金屬元素(例如,鋁源氣體)及氧 氣之脈衝注射交替施加至金屬層401而形成,如圖Π所示 。在此態樣中,氧擴散防止層4 0 3係由氧化鋁薄膜所形成 。在形成氧化鋁薄膜時,使用三甲基鋁(TM A )、三乙基鋁 (TEA)、三異丁基鋁(T1BA)或AlClx之其中一者作為鋁源氣 體。使用02及N20之其中一者作為氧源氣體。使用氬氣、i 氣及氦氣之其中一者作為沖洗用氣。 由於將氧擴散防止層4〇3額外形成於如說明於本發明之 第一態樣中之具有良好耐熱及抗氧化特性之金屬層40 1上 (在金屬層401之間),因而多重金屬層405之耐熱及抗氧化 特性可獲得傑出的改良。雖然根據第一態樣之金屬層在其
第28頁 /1 4d2 7 8 五、發明說明(23) 表面上具有氧化物層,因而根據第二態樣之多重金屬層 405在其内部及在其表面上具有氧擴散防止層403,因而能 更可靠地防止氧之擴散。 垠櫨本發明之第三能樣利用原子層沉精形成金屈層夕方法 圖1 2及1 3係說明根據本發明之第三態樣,利用原子層沉 積形成金屬層之方法之剖面圖。根據本發明之第三態樣, 利用原子層沉積所形成之金屬層係如圖13所示之多重金屬 層507。多重金屬層507係經由連續沉積金屬層501、氧擴 散防止層503及材料層505多次而形成。氧擴散防止層5〇3 係利用稍後即將說明之熱處理而自發地形成。 參照圖12,將金屬層501形成於半導體基材(未示於圖 中)上。金屬層5 0 1係以與用於形成本發明之第一態樣之金 屬層相同之方式形成。換言之,金屬層501係經形成為其 中反應性金屬(A )、防止反應性金屬及氮(N)結晶之非晶形 結合元素(B) '及氮(N) ’利用原子層沉積,以A-B-N結構 連續堆疊之結構。反應性金屬(A)可為Ti、Ta、、Zi*、tlf 、Μ o或N b,及非晶形結合元素(B)可為如於本發明之第— 態樣中之A1、S i或B。金屬層5 0 1係在與根據本發明之第— 或第二態樣形成金屬層之方法相同之條件下(例如,沉積 溫度及源氣體)形成。金屬層501為TiAIN層。 接下來利用原子層沉積在金屬層501上形成含氧材料層 5 0 5。在本發明之此態樣中’材料層5 0 5係由T i ON薄膜所形 成。換言之,將鈦、氧及氮源氣體之派衝注射以預定次序 交替供應至原子層沉積室’因而形成Ti ON薄骐。
第29頁 4 442 7 8 五、發明說明(24) 參照圖1 3,在包括金屬層5 0 1及材料層5 0 5之半導體基才才 上進行熱處理,因而在金屬層501與材料層5〇5之間形成氧 擴散防止層503。金屬層501之金屬物質與材料層之氧 反應,因而形成氧擴散防止層503。舉例來說,當金屬層 5 Ο 1係由T i A 1 N薄膜所形成,及材料層5 0 5係由T i ON薄膜所 形成時’金屬層501中之鋁漂移至金屬層501之表面並與包 含於材料層505中之氧反應,因而形成氧化鋁薄膜之氧擴 散防止層5 0 3。根據第三態樣之多重金屬層507包括多個結 構’其各包括連續堆疊的金屬層501、氧擴散防止層5〇3及 材料層5 0 5。 由於將氧擴散防止層503額外形成於如說明於本發明之 第一態樣中之具有良好耐熱及抗氧化特性之金屬層5〇 i上 (在—金屬層501之間),因而多重金屬層5〇7之耐熱及抗氧化 特性可獲得傑出的改良。 參照圖14及1 5,將詳細說明使用根據本發明之第二及第 二態樣利用原子層沉積所形成之金屬層作為障壁金屬層之 製造半導體裝置之方法。參照圖14,在半導體基材6〇1上 形成包含氧化矽(Si 02)薄膜之絕緣層603。接著進行光蝕 刻:以在絕緣層603中形成觸孔《接下來將觸孔填充多晶 石夕4膜至預定高度’而形成為導電性材料薄膜之插塞 。插塞6 0 5係經由在絕緣層6 0 3上及在觸孔中沉積多晶矽’ 然後在多晶矽上進行濕式蝕刻,或濕式蝕刻結合化學機械 抛光’以在觸孔之底部留下預定厚度之多晶矽而形成。 參照圖15 ’在半導體基材601之整個表面包括插塞6〇5上
第30頁 4442 7 8 五、發明說明(25) -- 形成金屬層。在金屬層上進行回蝕或化學機械拋光程序, 以形成填充觸孔之障壁金屬層6 0 7。障壁金屬層6〇7係以與 用於形成根據本發明之第二或第三態樣之金屬層相同之方 式形成。換言之,障壁金屬層6〇7可為經由重複(例如,3_ 1 0次)堆疊雙層結構而形成之多重金屬層,其中連續堆疊 利用原子層沉積形成之具有反應性金屬(A)_非晶形結合元 素(B)-氮(N)結構之金屬層及厚度5_15埃之氧擴散防止層 。或者’障壁金屬層60 7可為經由重複(例如,3_1〇次)堆 疊二層結構而形成之多重金屬層,其中連續堆疊具有A_B_ N結構之金屬層、氧擴散防止層及材料層。 反應性金屬(A)可為Ti、Ta、W、Zr、Hf、M〇或Nb,及非 晶形結合元素(B)可為A1、Si或B。在此具體實例中,障壁 金屬層607係由TiAIN層形成至5 0-5 00埃之厚度。當障壁金 屬層607係由多重金屬層形成時,能更可靠地防止插塞6〇5 在熱處理過程中之氧化。 接下來在半導體基材包括障壁金屬層6〇7上形成下電 極609。下電極6〇9係由鉑(pt)、釕(Ru)、銥、氧化釕 (Ru〇2)氧化銥(ir〇2)所形成。在下電極層6〇9上沉積具有大 介電常數之氧化鈕薄膜(Ta2〇5)或強誘電性物質,諸如ρζτ ((Pb, Zr)Ti03)、BST ((Ba,Sr)Ti03)或STO (SrTi03), 而形成介電薄膜611。接著在介電薄膜611上形成上電極 613。上電極613係由與下電極6〇9相同之物質形成。 如前所述,利用本發明之原子層沉積形成之金屬層或多 重金屬層具有高耐熱及抗氧化特性。由於本發明之金屬層
第31頁 4442 7 8 五、發明說明(26) 或多重金屬層係經由個別沉積原子層而形成,因而其階梯 覆蓋率即使係在非常高密度之區域中亦相當優異。此外, 由於在本發明之原子層沉積中,個別的原子層係以預定次 序吸附及生成’因而可容易地調整包含於金屬層或多重金 廣層中之各元素的組成比,且相較於CV1),組成的再現性 優異。 根據本發明之原子層沉積,金屬層或多重金屬層之各元 素$組成比可僅經由適當地決定源氣體之脈衝注射數目而 作令人滿意的調整。因此,金屬層或多重金屬層之電阻及 導電性可非常方便地調整。 可將利用本發明之原子層沉積所形成之金屬層或多重金 廣層使用作為半導體裝置中之障壁金屬層、下電極或上電 極~ ‘將本發明之金屬層或多重金屬層使用作為障壁金屬 $時’除了前述的作用外,尚可防止多晶矽插塞之氧化。 _將本發明之金屬層或多重金屬層使用作為下電極時,並 不需在下電極與基材之間形成額外的障壁金屬層,因而可 簡化製造。當將本發明之金屬層或多重金屬層使用作為上 電極時’可容易地調整上電極之組成’因而可使導電性及 電F且之調整容易。
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Claims (1)
- 4442 7 8 六、申請專利範圍 1 · 一種形成具有A-B-N結構之金屬層之方法,其中經由 個別注射反應性金屬(A)、防止反應性金屬(A)與氮(N)結 晶之紹(B)、及氮(N)之脈衝源氣體,並使源氣體化學吸附 至半導體基材,而堆疊多個原子層,藉此方法將源氣體以 預定次序交替注入’以交替配置原子層,並調整各源氣體 之注射脈衝的數目’以決定金屬層之組成。 2. 如申請專利範圍第1項之方法,其中該反應性金屬 (A)係選自由鈦(Ti)、钽(Ta)、鎢(w)、锆(Zr)、铪(Hf)、 鉬(Mo)及藏(Nb)所组成之群之其中一者。 3. 如申請專利範圍第1項之方法,其中該金屬層之導電 性及電阻係經由調整鋁之源氣體之注射脈衝之數目而決定 〇 4·如申請專利範圍第1項之方法,其中當該金屬層為 ΤιΑΙΝ層時,在TiAIN層中之A1相對於Ti之含量為10-35%。 5.如申請專利範圍第1項之方法,其中當該反應性金屬 (A)為Τι時,Ti之源氣體係選自由T iCL、肆(二甲胺基)鈦 (TDMAT)、及肆(二乙胺基)鈦(TDEAT)所組成之群之其中一 者9 6_如申_請專利範圍第1項之方法,其中鋁(A1)之源氣體 係選自由三曱基鋁(TMA)、三乙基鋁(TEA)、三異丁基鋁 (TIBA)及AlClx所組成之群之其中—者。 7. 如申請專利範圍第1項之方法,其中氮(N)之源氣體 係為N2或〇3。 8. 如申請專利範圍第丨項之方法,其中自金屬層之形成第33頁 4 442 7 8開始至形成結束 連續注入用於沖洗源氣體之沖洗用氣體 9.如申請專利範圍第1項之 之沖洗用氣體係以脈衝注入, 源氣體之注射脈衝之間注入。 10_ —種半導體裝置,包括 包含在半導體基材中之觸孔 形成於觸孔底部之導電性材 包括形成於觸孔中之導電性 於下電極上之高介電薄膜、及 極之電容器;及 方法’其中用於沖洗源氣體 以在金屬層之形成過程中在 之絕緣薄膜; 料薄膜; 材料薄膜上之下電極、形成 形成於高介電薄膜上之上電 在觸孔中之導電性材料薄膜與下電極之間的障壁金屬只 ,此障壁金屬層係經形成為A — b — n結構,其中經由交替沉 積反應性金屬(A)、防止反應性金屬(A)與氮(N)結晶之鋁 (B) '及氮(N) ’而堆疊多個原子層, 其中障壁金屬層之組成比係由各原子層之沉積次數而決 定0 η·如申請專利範圍第1〇項之半導體裝置,其中該反應 性金屬(Α)係選自由鈦(Ti)、钽(Ta)、鎢(w)、錘(Zr)、铪 (Hf)、顧(Mo)及銳(Nb)所組成之群之其中一者。 12·如申請專利範圍第10項之半導體裝置,其中該障壁 金屬層之導電性及電阻係由鋁之原子層之注射脈衝數目對 障壁金屬層所使用之注射脈衝之總數所決定。 13.如申請專利範圍第1 〇項之半導體裝置’其中當該障第34頁 ' 4442 7 8壁金屬層係由TiA IN所形成時’障壁金屬層之比電阻隨A1 之組成比的增加而增加。 14. 如申請專利範圍第10項之半導體裝置,其中當該障 壁金屬層係由TiAIN所形成時’A1相對於反應性金屬之含 量為 10-35%。 15. 一種半導體裝置,具有包括形成於半導體基材上之 材料薄膜上之下電極、形成於下電極上之高介電薄膜、及 形成於高介電薄膜上之上電極之電容器,其中該下電極係 經形成為A-B-N結構,其中經由交替及連續沉積反應性金 屬(A)、防止反應性金屬(A)與氮(N )結晶之非晶形結合元 素(B)、及氮(N)之原子層’而堆疊多個原子層,其中該下 電極之組成係由各原子層之沉積次數所決定。 如申請專利範圍第15項之半導體裝置,其中該反應 性金屬(Α)係選自由鈦(Ti)、钽(Ta)、鎢(W)、錯(Zr)、铪 (Hf)、鉬(Mo)及銳(Nb)所組成之群之其中一者。 17. 如申請專利範圍第15項之半導體裝置,其中該防止 反應性金屬(A)與氮(N)結晶之非晶形結合元素(B )係為矽 (Si)或硼(B)。 18. 如申請專利範圍第15項之半導體裝置,其中該防止 反應性金屬(A)與氮(N)結晶之非晶形結合元素(B)係為鋁 (A1)。 19. 如申請專利範圍第15項之半導體裝置,其中該上電 極係經形成為A-B-N結構’其中經由交替及連續沉積反應 性金屬(A)、防止反應性金屬(a )與氮(n )結晶之非晶形結第35頁 4442 7 8 六、申請專利範圍 一 合元素(B)、及氮U)之原子層,而堆疊多個原子層,其中 该上電極之組成係由各原子層之沉積次數所決定。 20.如申請專利範圍第15項之半導體裝置,其中該下電 極之導電性及電阻係由非晶形結合元素之原子層之沉積次 數對下電極所使用之沉積總數之比所決定。 21· 一種形成金屬層之方法’包括下列步驟: 經由以預定次序個別注射構成具有A_B_N結構之氮化合 物之反應性金屬(A )、防止反應性金屬(A)與氮(N)結晶之 非晶形結合元素(B)、及氤(n )之脈衝源氣體,並使源氣體 化學吸附至半導體基材’同時並調整各源氣體之注射脈衝 之數目以調整金屬層之組成,而形成具有A_B_N結構之金 屬層;及 砗金屬層上形成氧擴散防止層,因而形成包括多個金屬 層及多個氧擴散防止層之多重金屬層。 22.如申請專利範圍第21項之方法,其中該氧擴散防止 層係經由將金屬元素及氧之源氣體之脈衝注射交替施加至 包括金屬層之半導體基材而形成。 23,如申請專利範圍第21項之方法,其中該氧擴散防止 層係經由進行利用原子層沉積在金屬層上形成含氧材料層 ’並將包括金屬層及材料層之半導體基材熱處理之步驟而 形成。 24·如申請專利範圍第2 1項之方法,其中該反應性金屬 (A)係選自由鈦(π)、钽(Ta)、鎢(W)、锆(Zr)、鈴(Hf)、 鉬(Mo)及鈮(Nb)所組成之群之其中一者。第36頁 4442 78 六、申請專利範圍 25·如申請專利範圍第21項之方法,其中該防止反應性 金屬(A )與氮(N)結晶之非晶形結合元素(b )係選自由鋁 (A1)、矽(Si)及硼(B)所組成之群之其中一者。 26.如申請專利範圍第21項之方法’其中該金屬層之導 電性及電阻係經由調整非晶形結合元素之源氣體之注射脈 衝的數目而決定。 2 7.如申請專利範圍第2 1項之方法,其中當該反應性金 屬(A)為Ti時,Ti之源氣體係選自由TiCi4、肆(二f胺基) 鈦(TDMAT)、及肆(二乙胺基)鈦(TDEAT)所組成之群之其中 一者。 28·如申請專利範圍第2 1項之方法,其中當該防止反應 性金屬(A)與氮(N)結晶之非晶形結合元素(b )為& I時,鋁 (A1)之源氣體係選自由三甲基鋁(TMA)、三乙基紹(TEA)、 三異丁基紹(TIBA)及AlClx所組成之群之其中—者。 29_如申請專利範圍第21項之方法,其中氣(N)之源氣 體係為N2或〇3。 其中該氧擴散防止 3 0.如申請專利範圍第21項之方法, 層係為氧化紹層。 31. —種半導體裴置,包括: 包含在半導體基材中之觸孔之絕緣薄膜 形成於觸孔底部之導電性材料薄臈; 包括形成於觸孔中之導電性;^划_ $时L π ^旺柯枓溥膜上之下電極、形成 於下電極上之高介電薄膜'及形成於古 ^ ^ ^ ^ ^ α 久〜戍於问介電薄膜上之上電 極之電容器;及第37頁 4442 7 8 六、申請專利範圍 包含多個金屬層及多個氧擴散防止層之障壁金屬層;各 金屬層係形成於觸孔中之導電性材料薄膜與下電極之間, 3玄金屬層係經形成為A - B_ N結構,其中經由交替沉積反應 性金屬(A)、防止反應性金屬(A)與氮(N)結晶之非晶形結 合元素(B)、及氮(N),而堆疊多個原子層,其中該金屬層 之組成比係由各原子層之沉積次數所決定,及各氧擴散防 止層係形成於金屬層上。 32_如申請專利範圍第31項之半導體裝置,其更包括在 氧擴散防止層上之含氧材料層。 33. 如申請專利範圍第31項之半導體裝置’其中該反應 性金屬(A)係選自由鈦(Ti)、鈕(Ta)、鎢(W)、锆Ur)、铪 (HO、鉬(Mo)及鈮(Nb)所組成之群之其中/者。 34. 如申請專利範圍第31項之半導體裝置,該防止 反應性金屬(A)與氮(N)結晶之非晶形結合元素(B)係選自 由紹(A1)、石夕(Si)及删(B)所組成之群之其中一者。 35. 如申請專利範圍第31項之半導體裝置,其中該障壁 金屬層之導電性及電阻係由非晶形結合元素之原子層之沉 積次數對障壁金屬層所使用之沉積總數之比所決定。 36. 如申請專利範圍第31項之半導體裝置,其中該氧擴 散防止層係為氧化鋁層。第38頁
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7541276B2 (en) | 2005-02-05 | 2009-06-02 | Samsung Electronics Co., Ltd. | Methods for forming dual damascene wiring for semiconductor devices using protective via capping layer |
TWI382513B (zh) * | 2008-03-21 | 2013-01-11 | Toshiba Kk | 半導體裝置及半導體裝置之製造方法 |
TWI447784B (zh) * | 2006-06-09 | 2014-08-01 | Micron Technology Inc | 使用原子層沈積方法形成材料層之方法 |
Families Citing this family (571)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100385946B1 (ko) * | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
US6974766B1 (en) * | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
US6727169B1 (en) | 1999-10-15 | 2004-04-27 | Asm International, N.V. | Method of making conformal lining layers for damascene metallization |
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US6319766B1 (en) * | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
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US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
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US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
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US7101795B1 (en) * | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US20020036780A1 (en) * | 2000-09-27 | 2002-03-28 | Hiroaki Nakamura | Image processing apparatus |
JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
US6355561B1 (en) * | 2000-11-21 | 2002-03-12 | Micron Technology, Inc. | ALD method to improve surface coverage |
KR100504554B1 (ko) * | 2000-12-21 | 2005-08-01 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US7192827B2 (en) * | 2001-01-05 | 2007-03-20 | Micron Technology, Inc. | Methods of forming capacitor structures |
JP2002222934A (ja) * | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
JP2002319636A (ja) * | 2001-02-19 | 2002-10-31 | Nec Corp | 半導体記憶装置及びその製造方法 |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US6596643B2 (en) * | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
US6849545B2 (en) * | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US20070009658A1 (en) * | 2001-07-13 | 2007-01-11 | Yoo Jong H | Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
JP2005518088A (ja) * | 2001-07-16 | 2005-06-16 | アプライド マテリアルズ インコーポレイテッド | タングステン複合膜の形成 |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20080268635A1 (en) * | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US20030059538A1 (en) * | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
TW589684B (en) * | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7204886B2 (en) * | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US6773507B2 (en) * | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US7081271B2 (en) * | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6809026B2 (en) * | 2001-12-21 | 2004-10-26 | Applied Materials, Inc. | Selective deposition of a barrier layer on a metal film |
US6939801B2 (en) * | 2001-12-21 | 2005-09-06 | Applied Materials, Inc. | Selective deposition of a barrier layer on a dielectric material |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
US7175713B2 (en) * | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) * | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US6825134B2 (en) * | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US20030235961A1 (en) * | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US20030215570A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
US7041335B2 (en) * | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US20030232501A1 (en) * | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
JP2004040059A (ja) * | 2002-07-08 | 2004-02-05 | Fujitsu Ltd | 半導体記憶装置の製造方法および半導体記憶装置 |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040009336A1 (en) * | 2002-07-11 | 2004-01-15 | Applied Materials, Inc. | Titanium silicon nitride (TISIN) barrier layer for copper diffusion |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
US7066194B2 (en) * | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
TW200411923A (en) * | 2002-07-19 | 2004-07-01 | Asml Us Inc | In-situ formation of metal insulator metal capacitors |
US6772072B2 (en) | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US7150789B2 (en) * | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
US6753271B2 (en) * | 2002-08-15 | 2004-06-22 | Micron Technology, Inc. | Atomic layer deposition methods |
US6890596B2 (en) * | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US20040036129A1 (en) * | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US6967154B2 (en) | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
US6673701B1 (en) * | 2002-08-27 | 2004-01-06 | Micron Technology, Inc. | Atomic layer deposition methods |
US6794284B2 (en) * | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
US6995081B2 (en) * | 2002-08-28 | 2006-02-07 | Micron Technology, Inc. | Systems and methods for forming tantalum silicide layers |
US6967159B2 (en) * | 2002-08-28 | 2005-11-22 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using organic amines |
US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US7097782B2 (en) * | 2002-11-12 | 2006-08-29 | Micron Technology, Inc. | Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly |
US7022605B2 (en) * | 2002-11-12 | 2006-04-04 | Micron Technology, Inc. | Atomic layer deposition methods |
US20040102033A1 (en) * | 2002-11-21 | 2004-05-27 | Texas Instruments, Incorporated | Method for forming a ternary diffusion barrier layer |
US7244683B2 (en) * | 2003-01-07 | 2007-07-17 | Applied Materials, Inc. | Integration of ALD/CVD barriers with porous low k materials |
US6753248B1 (en) | 2003-01-27 | 2004-06-22 | Applied Materials, Inc. | Post metal barrier/adhesion film |
US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US6951813B2 (en) * | 2003-04-04 | 2005-10-04 | Micron Technology, Inc. | Methods of forming metal-containing layers including a metal bonded to halogens and trialkylaluminum |
KR100988082B1 (ko) * | 2003-05-21 | 2010-10-18 | 삼성전자주식회사 | 스택형 커패시터, 그를 구비한 반도체 메모리 소자 및 그제조방법 |
WO2004113585A2 (en) * | 2003-06-18 | 2004-12-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
US20050067103A1 (en) * | 2003-09-26 | 2005-03-31 | Applied Materials, Inc. | Interferometer endpoint monitoring device |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
WO2005038985A2 (en) * | 2003-10-16 | 2005-04-28 | Abb Research Ltd. | COATINGS OF Mn+1AXn MATERIAL FOR ELECTRICAL CONTACT ELEMENTS |
US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
KR100591762B1 (ko) * | 2004-01-19 | 2006-06-22 | 삼성전자주식회사 | 증착 장치 및 증착 방법 |
US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US20060153995A1 (en) * | 2004-05-21 | 2006-07-13 | Applied Materials, Inc. | Method for fabricating a dielectric stack |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20060062917A1 (en) * | 2004-05-21 | 2006-03-23 | Shankar Muthukrishnan | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane |
US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US8323754B2 (en) * | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US7148118B2 (en) * | 2004-07-08 | 2006-12-12 | Micron Technology, Inc. | Methods of forming metal nitride, and methods of forming capacitor constructions |
US7241686B2 (en) * | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
US20060019032A1 (en) * | 2004-07-23 | 2006-01-26 | Yaxin Wang | Low thermal budget silicon nitride formation for advance transistor fabrication |
US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7429402B2 (en) * | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
KR100604923B1 (ko) * | 2005-01-04 | 2006-07-28 | 삼성전자주식회사 | 원자층 증착법에 의한 티탄 알루미늄 질화막 형성방법 및이를 이용하여 제조된 발열 전극을 갖는 상변화 메모리 소자 |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
WO2006098565A1 (en) * | 2005-03-16 | 2006-09-21 | Ips Ltd. | Method of depositing thin film using ald process |
JP2008538838A (ja) * | 2005-04-25 | 2008-11-06 | インパクト コーティングス アーベー | スマートカード及びスマートカード読取装置 |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) * | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
US7473637B2 (en) | 2005-07-20 | 2009-01-06 | Micron Technology, Inc. | ALD formed titanium nitride films |
KR100709033B1 (ko) * | 2005-08-06 | 2007-04-18 | 주식회사 아이피에스 | HfSiN 박막증착방법 |
US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
US7402534B2 (en) * | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7521356B2 (en) * | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
KR100718137B1 (ko) * | 2005-09-05 | 2007-05-14 | 삼성전자주식회사 | 3차원 강유전체 커패시터와 이를 포함하는 불휘발성 메모리소자와 그 제조 방법 |
KR100719803B1 (ko) * | 2005-09-08 | 2007-05-18 | 주식회사 아이피에스 | 원자층 증착 방법을 이용한 티타늄알미늄나이트라이드 박막형성 방법 |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
US20070082507A1 (en) * | 2005-10-06 | 2007-04-12 | Applied Materials, Inc. | Method and apparatus for the low temperature deposition of doped silicon nitride films |
JP4703349B2 (ja) * | 2005-10-11 | 2011-06-15 | Okiセミコンダクタ株式会社 | アモルファス膜の成膜方法 |
US20070099422A1 (en) * | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
CN101448977B (zh) * | 2005-11-04 | 2010-12-15 | 应用材料股份有限公司 | 用于等离子体增强的原子层沉积的设备和工艺 |
KR100721017B1 (ko) * | 2005-12-28 | 2007-05-22 | 삼성전자주식회사 | 불휘발성 메모리 소자 및 그의 형성 방법 |
US7303983B2 (en) * | 2006-01-13 | 2007-12-04 | Freescale Semiconductor, Inc. | ALD gate electrode |
US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US20070252299A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Synchronization of precursor pulsing and wafer rotation |
US7798096B2 (en) * | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
US7501355B2 (en) * | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
TWI395335B (zh) * | 2006-06-30 | 2013-05-01 | Applied Materials Inc | 奈米結晶的形成 |
WO2008016650A2 (en) * | 2006-07-31 | 2008-02-07 | Applied Materials, Inc. | Methods of forming carbon-containing silicon epitaxial layers |
DE112007001813T5 (de) * | 2006-07-31 | 2009-07-09 | Applied Materials, Inc., Santa Clara | Verfahren zum Steuern der Morphologie während der Bildung einer epitaktischen Schicht |
US7601648B2 (en) | 2006-07-31 | 2009-10-13 | Applied Materials, Inc. | Method for fabricating an integrated gate dielectric layer for field effect transistors |
US7582549B2 (en) * | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
US7521379B2 (en) * | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
US20080099436A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US8158526B2 (en) | 2006-10-30 | 2012-04-17 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US20080145536A1 (en) * | 2006-12-13 | 2008-06-19 | Applied Materials, Inc. | METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION |
US20080206987A1 (en) * | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
KR100881055B1 (ko) * | 2007-06-20 | 2009-01-30 | 삼성전자주식회사 | 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법 |
KR100872799B1 (ko) | 2007-09-11 | 2008-12-09 | 포항공과대학교 산학협력단 | 플라스마 원자층 증착법을 이용한 반도체 콘택트용 금속실리사이드 제조방법 |
JP5097661B2 (ja) * | 2007-09-21 | 2012-12-12 | ソウル オプト デバイス カンパニー リミテッド | Iii族窒化物化合物半導体装置 |
US7678298B2 (en) * | 2007-09-25 | 2010-03-16 | Applied Materials, Inc. | Tantalum carbide nitride materials by vapor deposition processes |
US7585762B2 (en) * | 2007-09-25 | 2009-09-08 | Applied Materials, Inc. | Vapor deposition processes for tantalum carbide nitride materials |
US7824743B2 (en) * | 2007-09-28 | 2010-11-02 | Applied Materials, Inc. | Deposition processes for titanium nitride barrier and aluminum |
KR100942954B1 (ko) | 2008-03-31 | 2010-02-17 | 주식회사 하이닉스반도체 | 형상기억합금전극을 구비한 캐패시터 및 그 제조 방법 |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
US8076237B2 (en) * | 2008-05-09 | 2011-12-13 | Asm America, Inc. | Method and apparatus for 3D interconnect |
JP5513767B2 (ja) * | 2008-06-25 | 2014-06-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置 |
US8491967B2 (en) * | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
US8146896B2 (en) * | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
JP5384291B2 (ja) | 2008-11-26 | 2014-01-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8071452B2 (en) * | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
JP5719138B2 (ja) * | 2009-12-22 | 2015-05-13 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理方法 |
JP5562631B2 (ja) * | 2009-12-25 | 2014-07-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2011146507A (ja) * | 2010-01-14 | 2011-07-28 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
JP5572447B2 (ja) | 2010-05-25 | 2014-08-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
KR101196746B1 (ko) | 2010-07-30 | 2012-11-07 | 영남대학교 산학협력단 | 원자층 증착법에 의한 박막 형성 방법, 이를 포함하는 반도체 소자의 배선 및 그 제조 방법 |
US8778204B2 (en) | 2010-10-29 | 2014-07-15 | Applied Materials, Inc. | Methods for reducing photoresist interference when monitoring a target layer in a plasma process |
JP5081334B2 (ja) * | 2010-12-27 | 2012-11-28 | パナソニック株式会社 | 不揮発性記憶素子、その製造方法 |
JP5269112B2 (ja) * | 2011-01-24 | 2013-08-21 | ラピスセミコンダクタ株式会社 | アモルファス膜を備える半導体装置、及び半導体装置の製造方法 |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8961804B2 (en) | 2011-10-25 | 2015-02-24 | Applied Materials, Inc. | Etch rate detection for photomask etching |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US8808559B2 (en) | 2011-11-22 | 2014-08-19 | Applied Materials, Inc. | Etch rate detection for reflective multi-material layers etching |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US8900469B2 (en) | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US9805939B2 (en) | 2012-10-12 | 2017-10-31 | Applied Materials, Inc. | Dual endpoint detection for advanced phase shift and binary photomasks |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US8778574B2 (en) | 2012-11-30 | 2014-07-15 | Applied Materials, Inc. | Method for etching EUV material layers utilized to form a photomask |
JP6087609B2 (ja) * | 2012-12-11 | 2017-03-01 | 東京エレクトロン株式会社 | 金属化合物膜の成膜方法、成膜装置、および電子製品の製造方法 |
US9064857B2 (en) | 2012-12-19 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | N metal for FinFET |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9824881B2 (en) | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
JP6258657B2 (ja) | 2013-10-18 | 2018-01-10 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
DE102014103220A1 (de) * | 2014-03-11 | 2015-09-17 | Walter Ag | TiAIN-Schichten mit Lamellenstruktur |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
KR102368099B1 (ko) * | 2015-06-25 | 2022-02-25 | 삼성전자주식회사 | 커패시터 및 이를 포함하는 반도체 장치 |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US20170040108A1 (en) * | 2015-08-06 | 2017-02-09 | Murata Manufacturing Co., Ltd. | Capacitor |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
DE102015223951B4 (de) * | 2015-12-01 | 2022-12-01 | TE Connectivity Sensors Germany GmbH | Substrat für eine Sensoranordnung für ein Widerstandsthermometer, Sensoranordnung und Widerstandsthermometer |
DE102015223949B4 (de) * | 2015-12-01 | 2020-09-24 | TE Connectivity Sensors Germany GmbH | Sensoranordnung für ein Widerstandsthermometer, Widerstandsthermometer und Verfahren zur Herstellung einer Sensoranordnung |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
DE102015223950A1 (de) * | 2015-12-01 | 2017-06-01 | TE Connectivity Sensors Germany GmbH | Substrat für eine Sensoranordnung für ein Widerstandsthermometer, Sensoranordnung, Widerstandsthermometer und Verfahren zur Herstellung eines solchen Substrats |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
WO2017171767A1 (en) * | 2016-03-31 | 2017-10-05 | Intel Corporation | Diffusion barriers |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
JP6595432B2 (ja) * | 2016-09-23 | 2019-10-23 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TWI816783B (zh) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
TW202405221A (zh) | 2018-06-27 | 2024-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
WO2020003803A1 (ja) * | 2018-06-28 | 2020-01-02 | 東京エレクトロン株式会社 | 成膜方法、成膜システム、及び成膜装置 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
KR20210010817A (ko) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
JP2021169649A (ja) * | 2020-04-15 | 2021-10-28 | 東京エレクトロン株式会社 | 金属窒化膜を成膜する方法、及び装置 |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
TW202147543A (zh) | 2020-05-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 半導體處理系統 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202212620A (zh) | 2020-06-02 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR102707957B1 (ko) | 2020-07-08 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
KR20220045900A (ko) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치 |
CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
US12034036B2 (en) | 2020-11-03 | 2024-07-09 | Samsung Electronics Co., Ltd. | Semiconductor device and semiconductor apparatus including the same |
CN114512597A (zh) | 2020-11-16 | 2022-05-17 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
KR20220081905A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 증착용 실리콘 전구체 |
CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
JP7217819B1 (ja) | 2022-01-18 | 2023-02-03 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645256A (ja) * | 1992-07-21 | 1994-02-18 | Rikagaku Kenkyusho | ガスパルスの供給方法およびこれを用いた成膜方法 |
JP3415207B2 (ja) * | 1992-07-24 | 2003-06-09 | 東京エレクトロン株式会社 | 化学気相成長による金属薄膜形成方法 |
JP3422055B2 (ja) * | 1993-11-08 | 2003-06-30 | 株式会社デンソー | 半導体装置の電極配線 |
JPH0955478A (ja) * | 1995-08-14 | 1997-02-25 | Hitachi Ltd | 半導体集積回路の製造方法 |
US6054331A (en) * | 1997-01-15 | 2000-04-25 | Tong Yang Cement Corporation | Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate |
KR100385946B1 (ko) * | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
KR100219349B1 (ko) * | 1997-07-28 | 1999-09-01 | 손상호 | 건강매트 |
KR19990012246A (ko) | 1997-07-28 | 1999-02-25 | 윤종용 | 원자층 증착법에 의한 금속 배리어막을 구비한 반도체장치및 그 제조방법 |
KR100261017B1 (ko) * | 1997-08-19 | 2000-08-01 | 윤종용 | 반도체 장치의 금속 배선층을 형성하는 방법 |
KR100274603B1 (ko) * | 1997-10-01 | 2001-01-15 | 윤종용 | 반도체장치의제조방법및그의제조장치 |
US6120842A (en) | 1997-10-21 | 2000-09-19 | Texas Instruments Incorporated | TiN+Al films and processes |
JPH11145077A (ja) * | 1997-10-31 | 1999-05-28 | Texas Instr Inc <Ti> | 膜及びその製法 |
KR100252049B1 (ko) * | 1997-11-18 | 2000-04-15 | 윤종용 | 원자층 증착법에 의한 알루미늄층의 제조방법 |
KR19990051335A (ko) * | 1997-12-19 | 1999-07-05 | 윤종용 | 원자층 증착에 의한 tialn의 증착방법 및 이 방법에 의해 형성되는 tialn 박막을 이용한 반도체 소자의 고유전체 커패시터 |
KR100269328B1 (ko) * | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
US6358810B1 (en) * | 1998-07-28 | 2002-03-19 | Applied Materials, Inc. | Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes |
KR100275752B1 (ko) * | 1998-11-18 | 2000-12-15 | 윤종용 | 접합 스페이서를 구비한 컨케이브 커패시터의 제조방법 |
JP4817210B2 (ja) * | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US6368910B1 (en) * | 2000-11-24 | 2002-04-09 | Winbond Electronics Corp. | Method of fabricating ruthenium-based contact plug for memory devices |
-
2000
- 2000-02-10 KR KR10-2000-0006251A patent/KR100385946B1/ko not_active IP Right Cessation
- 2000-03-22 TW TW089105232A patent/TW444278B/zh not_active IP Right Cessation
- 2000-12-06 JP JP2000371636A patent/JP3949373B2/ja not_active Expired - Fee Related
-
2001
- 2001-07-23 US US09/911,313 patent/US6590251B2/en not_active Expired - Fee Related
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2006
- 2006-12-05 JP JP2006328561A patent/JP2007081427A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7541276B2 (en) | 2005-02-05 | 2009-06-02 | Samsung Electronics Co., Ltd. | Methods for forming dual damascene wiring for semiconductor devices using protective via capping layer |
TWI447784B (zh) * | 2006-06-09 | 2014-08-01 | Micron Technology Inc | 使用原子層沈積方法形成材料層之方法 |
TWI382513B (zh) * | 2008-03-21 | 2013-01-11 | Toshiba Kk | 半導體裝置及半導體裝置之製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6590251B2 (en) | 2003-07-08 |
JP2001217206A (ja) | 2001-08-10 |
US20020000598A1 (en) | 2002-01-03 |
JP2007081427A (ja) | 2007-03-29 |
JP3949373B2 (ja) | 2007-07-25 |
KR100385946B1 (ko) | 2003-06-02 |
KR20010066730A (ko) | 2001-07-11 |
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