JP4703349B2 - アモルファス膜の成膜方法 - Google Patents
アモルファス膜の成膜方法 Download PDFInfo
- Publication number
- JP4703349B2 JP4703349B2 JP2005296165A JP2005296165A JP4703349B2 JP 4703349 B2 JP4703349 B2 JP 4703349B2 JP 2005296165 A JP2005296165 A JP 2005296165A JP 2005296165 A JP2005296165 A JP 2005296165A JP 4703349 B2 JP4703349 B2 JP 4703349B2
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- JP
- Japan
- Prior art keywords
- film
- phase
- tialn
- fraction
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000151 deposition Methods 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 238000005477 sputtering target Methods 0.000 claims description 17
- 229910010037 TiAlN Inorganic materials 0.000 description 124
- 239000010410 layer Substances 0.000 description 91
- 230000004888 barrier function Effects 0.000 description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 36
- 239000001301 oxygen Substances 0.000 description 36
- 229910052760 oxygen Inorganic materials 0.000 description 36
- 238000009792 diffusion process Methods 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 22
- 230000008021 deposition Effects 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 15
- 230000007704 transition Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- 229910010038 TiAl Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000005546 reactive sputtering Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910017150 AlTi Inorganic materials 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
Description
図1〜図3を参照して、アモルファス膜の成膜方法、及び成膜されたアモルファス膜の性質につき説明する。図1は、6つの異なる成膜条件で成膜されたアモルファス膜の電気抵抗率とN2分率との関係を示す図である。図2(A)及び(B)は、それぞれ、第1相及び第2相のTiAlN膜のXRD(X−ray diffractometer)の分析結果を示す図である。図3(A)及び(B)は、それぞれ、第1相及び第2相のTiAlN膜の断面SEM(scanning electron microscope)写真である。
図4を参照して、実施の形態2の半導体装置につき説明する。図4は、半導体装置の一例の断面切り口を示す概略図である。
図5を参照して、実施の形態3の半導体装置につき説明する。図5は、実施の形態3の半導体装置における導電性バリア層32の断面図である。なお、実施の形態3の半導体装置は、導電性バリア層32が3層構造である点以外は、実施の形態2の半導体装置10と同様の構造である。したがって、実施の形態3の半導体装置では、全体構造の図示及び半導体装置10と共通する構造の説明は省略する。
12 コンタクトプラグ
12a,24a 上面
14,32 導電性バリア層
14a 下面
16 下部電極
16a Ir膜
16b IrO2膜
16c Pt電極
18 キャパシタ絶縁膜
20 上部電極
22 基板
22a 主面
24 層間絶縁膜
26 段差
32a 下層
32b 中間層
32c 上層
Claims (1)
- Ti及びAlを含むほかに任意成分としてNを含むことがあるアモルファス膜であって、電気抵抗率が、6×102Ω・cm以下の当該アモルファス膜を、スパッタリングターゲットとしてTiAl合金を用い、下記のスパッタ条件で基板上に成膜することを特徴とするアモルファス膜の成膜方法。
(1)前記スパッタリングターゲットに関するDCパワーは、1kW以上かつ3kW以下である、
(2)成膜室内の気圧は、6mTorr以上かつ12mTorr以下である、
(3)基板温度は、100℃以上かつ300℃以下である、及び
(4)N2ガスとArガスとの混合スパッタガス中におけるN2ガスの体積比率が0%以上かつ70%以下である。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005296165A JP4703349B2 (ja) | 2005-10-11 | 2005-10-11 | アモルファス膜の成膜方法 |
US11/543,782 US20070080388A1 (en) | 2005-10-11 | 2006-10-06 | Capacitor assembly |
US12/207,661 US20090011593A1 (en) | 2005-10-11 | 2008-09-10 | Method of depositing amorphous film on capacitor assembly |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005296165A JP4703349B2 (ja) | 2005-10-11 | 2005-10-11 | アモルファス膜の成膜方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011011843A Division JP5269112B2 (ja) | 2011-01-24 | 2011-01-24 | アモルファス膜を備える半導体装置、及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007107023A JP2007107023A (ja) | 2007-04-26 |
JP4703349B2 true JP4703349B2 (ja) | 2011-06-15 |
Family
ID=37910381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005296165A Expired - Fee Related JP4703349B2 (ja) | 2005-10-11 | 2005-10-11 | アモルファス膜の成膜方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US20070080388A1 (ja) |
JP (1) | JP4703349B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4438963B2 (ja) * | 2006-11-29 | 2010-03-24 | セイコーエプソン株式会社 | 強誘電体キャパシタ |
KR101304049B1 (ko) * | 2008-03-21 | 2013-09-04 | 캘리포니아 인스티튜트 오브 테크놀로지 | 급속 커패시터 방전에 의한 금속 유리의 성형 |
JP5661452B2 (ja) * | 2010-12-27 | 2015-01-28 | キヤノンアネルバ株式会社 | スパッタリング方法 |
JP2014154632A (ja) * | 2013-02-06 | 2014-08-25 | Rohm Co Ltd | 多層構造体、コンデンサ素子およびその製造方法 |
JP6489299B2 (ja) * | 2014-09-04 | 2019-03-27 | ローム株式会社 | 水素バリア膜 |
JP6228530B2 (ja) * | 2014-12-02 | 2017-11-08 | 株式会社神戸製鋼所 | 電極およびその製造方法 |
KR102549542B1 (ko) | 2017-09-12 | 2023-06-29 | 삼성전자주식회사 | 금속 하드마스크 및 반도체 소자의 제조 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864786A (ja) * | 1994-08-01 | 1996-03-08 | Texas Instr Inc <Ti> | マイクロ電子構造体とその製造法 |
JP2001217206A (ja) * | 1999-12-08 | 2001-08-10 | Samsung Electronics Co Ltd | 原子層蒸着法を利用した金属層形成方法およびこれを用いた半導体素子 |
JP2001237395A (ja) * | 2000-02-22 | 2001-08-31 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2002057299A (ja) * | 2000-08-14 | 2002-02-22 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2002524859A (ja) * | 1998-08-28 | 2002-08-06 | アドバンスド.テクノロジー.マテリアルズ.インコーポレイテッド | 三元窒化物−炭化物バリア層 |
JP2005150688A (ja) * | 2003-10-22 | 2005-06-09 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2007042870A (ja) * | 2005-08-03 | 2007-02-15 | Seiko Epson Corp | 強誘電体キャパシタおよびその製造方法、ならびに強誘電体メモリ装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5231306A (en) * | 1992-01-31 | 1993-07-27 | Micron Technology, Inc. | Titanium/aluminum/nitrogen material for semiconductor devices |
US6534809B2 (en) * | 1999-12-22 | 2003-03-18 | Agilent Technologies, Inc. | Hardmask designs for dry etching FeRAM capacitor stacks |
US20050087788A1 (en) * | 2003-10-22 | 2005-04-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US7453149B2 (en) * | 2004-08-04 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite barrier layer |
JP4785030B2 (ja) * | 2005-01-18 | 2011-10-05 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
-
2005
- 2005-10-11 JP JP2005296165A patent/JP4703349B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-06 US US11/543,782 patent/US20070080388A1/en not_active Abandoned
-
2008
- 2008-09-10 US US12/207,661 patent/US20090011593A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864786A (ja) * | 1994-08-01 | 1996-03-08 | Texas Instr Inc <Ti> | マイクロ電子構造体とその製造法 |
JP2002524859A (ja) * | 1998-08-28 | 2002-08-06 | アドバンスド.テクノロジー.マテリアルズ.インコーポレイテッド | 三元窒化物−炭化物バリア層 |
JP2001217206A (ja) * | 1999-12-08 | 2001-08-10 | Samsung Electronics Co Ltd | 原子層蒸着法を利用した金属層形成方法およびこれを用いた半導体素子 |
JP2001237395A (ja) * | 2000-02-22 | 2001-08-31 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2002057299A (ja) * | 2000-08-14 | 2002-02-22 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005150688A (ja) * | 2003-10-22 | 2005-06-09 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2007042870A (ja) * | 2005-08-03 | 2007-02-15 | Seiko Epson Corp | 強誘電体キャパシタおよびその製造方法、ならびに強誘電体メモリ装置 |
Also Published As
Publication number | Publication date |
---|---|
US20090011593A1 (en) | 2009-01-08 |
US20070080388A1 (en) | 2007-04-12 |
JP2007107023A (ja) | 2007-04-26 |
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